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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 757. Отображено 120.
08-08-2017 дата публикации

Device for indirectly cooling battery module of eco-friendly vehicle

Номер: US0009728825B2
Автор: Jin Woo Kwak, Do Suck Han, Gun Goo Lee, Kyong Hwa Song, Hyuk Kang, Jeong Hun Seo, KWAK JIN WOO, HAN DO SUCK, LEE GUN GOO, SONG KYONG HWA, KANG HYUK, SEO JEONG HUN, Kwak Jin Woo, Han Do Suck, Lee Gun Goo, Song Kyong Hwa, Kang Hyuk, Seo Jeong Hun
Принадлежит: Hyundai Motor Company, HYUNDAI MOTOR CO LTD

A device for indirectly cooling a battery module of an eco-friendly vehicle is provided that cools the battery module using an interfacial plate into which a heat pipe is inserted to maximize battery heat emission performance and simultaneously prevent degradation of battery performance. A thermally-conductive interfacial plate in which a heat pipe is embedded by over-molding is disposed between battery cells and a heat sink, which is a condensation unit, integrally connected to an upper end of the heat pipe is disposed in a cooling air flow path to improve contact strength between the interfacial plate and the battery cells. A planar heat emitter is disposed between the battery cells where the interfacial plate is not disposed to heat the battery to a proper-level temperature in a cold-start environment and a low-temperature environment, thereby improving battery performance and preventing degradation in vehicle power.

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Номер записи: 1
12-01-2017 дата публикации

METHOD AND APPARATUS FOR FORMING COATING LAYER WITH NANO MULTI-LAYER

Номер: US20170009331A1
Автор: In Woong Lyo, Woong Pyo Hong, Kwang Hoon Choi, Hyuk Kang, Sang Jin Park, Yoon Suk Oh, LYO IN WOONG, HONG WOONG PYO, CHOI KWANG HOON, KANG HYUK, PARK SANG JIN, OH YOON SUK, Lyo In Woong, Hong Woong Pyo, Choi Kwang Hoon, Kang Hyuk, Park Sang Jin, Oh Yoon Suk
Принадлежит:

Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and Ngas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, Ngas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot. 17-. (canceled)8. A coating layer with a nano multilayer comprising:a multi-layer having alternating layers of a Cr—Mo—N nano composite coating layer and a Mo coating layer,wherein a main growth face of the Cr—Mo—N meets a predetermined corrosion resistance and electrical conductivity, and the main growth face of the Cr—Mo—N corresponds to a growing surface having the highest distribution as a same type crystal among all crystals constituting the Cr—Mo—N. This application claims under 35 U.S.C. §119(a) the benefit of Korean Patent Application No. 10-2011-0126658 filed on Nov. 30, 2011, the entire contents of which are incorporated herein by reference.(a) Technical FieldThe present invention relates to a method and an apparatus for forming a coating layer with a nano multi-layer, particularly a method and apparatus which controls the direction of crystal growth so as to improve the corrosion resistance and electrical conductivity of a coating layer.(b) Background ArtIn general, a plasma coating technique is used to coat a 3material onto an untreated material using plasma phenomenon under a vacuum condition so as to add mechanical and ...

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Номер записи: 2
10-08-2017 дата публикации

METHOD AND ELECTRONIC DEVICE FOR ESTABLISHING CONNECTION WITH EXTERNAL ELECTRONIC DEVICE

Номер: US20170231016A1
Автор: Chun-Ho Park, Jun-Sik Kwon, Gi-Beom Kim, Jun-Hak Lim, Hyuk Kang, In-Ji Jin, PARK CHUN-HO, KWON JUN-SIK, KIM GI-BEOM, LIM JUN-HAK, KANG HYUK, JIN IN-JI, Park Chun-Ho, Kwon Jun-Sik, Kim Gi-Beom, Lim Jun-Hak, Kang Hyuk, Jin In-Ji
Принадлежит:

A method and electronic device for establishing a connection with an external electronic device are disclosed. The electronic device may include: at least one communication interface configured to acquire information on at least one external device and a processor. The processor is configured to acquire, from a first external electronic device, a signal associated with identification information on the first external electronic device through the at least one communication interface. The processor is further configured to generate connection information for establishing a connection with a second external electronic device at least partially based on the identification information. The processor is further configured to establish the connection with the second external electronic device through the at least one communication interface at least partially based on the generated connection information.

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Номер записи: 3
26-07-2016 дата публикации

TiAgN coating layer, TiAgN coating method and TiAgN coating apparatus

Номер: US0009399813B2
Автор: Woong Pyo Hong, In Woong Lyo, Hyuk Kang, Kwang Hoon Choi, HONG WOONG PYO, LYO IN WOONG, KANG HYUK, CHOI KWANG HOON, Hong Woong Pyo, Lyo In Woong, Kang Hyuk, Choi Kwang Hoon
Принадлежит: Hyundai Motor Company, HYUNDAI MOTOR CO LTD

Disclosed is a TiAgN coating layer, formed by subjecting a substrate having a surface roughness of about 0.05˜0.1 μm to plasma coating by periodically turning on/off an Ag source while a Ti source is continuously turned on in a nitrogen gas atmosphere, a TiAgN coating method, and a TiAgN coating apparatus.

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Номер записи: 4
29-08-2017 дата публикации

Mobile terminal, mobile terminal auxiliary device and method for controlling the same

Номер: US0009749858B2
Автор: Hyun Chul Choi, Hyuk Kang, Hyeong Seok Kim, CHOI HYUN CHUL, KANG HYUK, KIM HYEONG SEOK, Choi Hyun Chul, Kang Hyuk, Kim Hyeong Seok
Принадлежит: Samsung Electronics Co., Ltd, SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

Methods and apparatuses are provided for controlling a mobile terminal and a mobile terminal auxiliary device. Information on at least one of the mobile terminal and the mobile terminal auxiliary device and security-related information on the at least one of the mobile terminal and the mobile terminal auxiliary device are stored. It is determined whether the mobile terminal and the mobile terminal auxiliary device exist within a predetermined available distance. If the mobile terminal and the mobile terminal auxiliary device exist within the predetermined available distance, it is determined whether the mobile terminal or the mobile terminal auxiliary device has been registered by using the stored information.

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Номер записи: 5
12-09-2017 дата публикации

Sharing a screen between electronic devices

Номер: US0009760331B2
Автор: Woo-Kwang Lee, Hyuk Kang, Guneet Singh Khurana, Hyun-Ho Kim, LEE WOO-KWANG, KANG HYUK, KHURANA GUNEET SINGH, KIM HYUN-HO, Lee Woo-Kwang, Kang Hyuk, Khurana Guneet Singh, Kim Hyun-Ho
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A screen sharing method for an electronic device is provided. A first device communicates with a second device and shares a first screen. At the first device, a specific image is displayed superposed with the first screen, where the specific image is excluded from the first screen shared with the second electronic device. The second screen is thereafter shared with the second device. An intuitive user interface for editing a shared screen and thereafter sharing the edited screen is thus provided.

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Номер записи: 6
21-02-2017 дата публикации

Method and apparatus for processing touch input in mobile terminal

Номер: US0009575582B2
Автор: Gi-Beom Kim, Hyuk Kang, Hyeong Seok Kim, Hyun Chul Choi, KIM GI-BEOM, KANG HYUK, KIM HYEONG SEOK, CHOI HYUN CHUL, Kim Gi-Beom, Kang Hyuk, Kim Hyeong Seok, Choi Hyun Chul
Принадлежит: Samsung Electronics Co., Ltd, SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

Disclosed are an apparatus and a method for processing a touch input in the mobile terminal. The method includes transmitting information displayed in the mobile terminal to an external display device when connected to the external display device through a wired or wireless interface, receiving a first input, identifying a holding time of the first input when receiving a second input following the first input, and processing the second input according to the holding time of the identified first input. Accordingly, the touch input is analyzed and a subsequent drag input is performed as a pointer movement or a scroll operation in accordance with a holding time of the touch input, so that a user can conveniently select a desired item.

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Номер записи: 7
16-05-2017 дата публикации

Method of controlling transmit power and electronic device therefor

Номер: US0009654956B2
Автор: Kyung Soo Lim, Hyuk Kang, Min Gyew Kim, Jae Bong Yoo, Jong Ho Choi, Duk Ki Hong, LIM KYUNG SOO, KANG HYUK, KIM MIN GYEW, YOO JAE BONG, CHOI JONG HO, HONG DUK KI, Lim Kyung Soo, Kang Hyuk, Kim Min Gyew, Yoo Jae Bong, Choi Jong Ho, Hong Duk Ki
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A method for determining a transmit power level in an electronic device and the electronic device thereof are provided. The method includes activating an emergency mode, determining a transmit power level based on a condition, and transmitting an emergency message, including information associated with a request for rescue, with the determined transmit power level.

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Номер записи: 8
05-01-2017 дата публикации

ALUMINUM ALLOY FOR CONTINUOUS CASTING AND METHOD FOR PRODUCING THE SAME

Номер: US20170002443A1
Автор: Hoon Mo Park, Hyuk Kang, PARK HOON MO, KANG HYUK, Park Hoon Mo, Kang Hyuk
Принадлежит:

The present disclosure provides an aluminum (Al) alloy for continuous casting, and a method of making the same. The Al alloy includes Al, Si in the range of 14 to 20 wt %, Ti in the range of 2 to 7 wt % and B in the range of 1 to 3 wt %. According to the disclosure, TiBcompound may be formed in the alloy, where the ratio of Ti:B may range from 2 to 2.5 wt %. By a process of continuously casting the molten metal, an aluminum alloy with improved elasticity may be produced. 111-. (canceled)12. A method for producing an aluminum alloy for continuous casting comprising:mixing a molten Al—Ti-based alloy comprising Ti 5˜10 wt % and a molten Al—B-based alloy comprising B 2˜10 wt % together.13. The method of claim 12 , wherein the molten AlTi and AlB are mixed in a tundish.14. The method of claim 12 , further comprising continuously casting the molten metal claim 12 , thereby producing the aluminum alloy. This application claims under 35 U.S.C. §119(a) the benefit of Korean Patent Application No. 10-2011-0125049 filed on Nov. 28, 2011, the entire contents of which are incorporated herein by reference.(a) Technical FieldThe present disclosure relates to an aluminum alloy. More particularly, the present disclosure relates to an aluminum allow produced by a continuous casting technique that bestows improved elasticity characteristics to the resulting aluminum alloy, and a method for producing the same.(b) Background ArtAluminum alloys improve the properties of aluminum and displays many excellent properties, which can be varied according to the composition of the alloy. For example, high strength aluminum alloys, such as duralumin, can be made by including copper, which provides high strength characteristics to the alloy. Increasing the copper content in the alloy has the effect of increasing the strength of the alloy. For example, super duralumin is created by adding copper to the duralumin, and extra super duralumin is created by adding copper to super duralumin. Extra super ...

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Номер записи: 9
27-03-2018 дата публикации

Method for selecting communication method and electronic device thereof

Номер: US9930619B2
Автор: KIM GI-BEOM, KANG HYUK, PARK CHUN-HO, LIM JUN-HAK, KWON JUN-SIK, LEE HYUN-JU, Kim Gi-Beom, Kang Hyuk, Park Chun-Ho, Lim Jun-Hak, Kwon Jun-Sik, Lee Hyun-Ju
Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A method for operating of an electronic device includes: connecting communication with an external electronic device; identifying state information and service information of the electronic device and the external electronic device; and selecting at least one communication method based on the state information and the service information. An electronic device includes a communication module and a processor. The processor is configured to select at least one communication method from a plurality of communication methods based on state information and service information of the electronic device and the external electronic device.

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Номер записи: 10
14-11-2017 дата публикации

Registration setting supporting method and electronic device

Номер: US0009820145B2
Автор: Su Hyun Kim, Hyuk Kang, Ju Ah Lee, Jun Hak Lim, Young Jae Choi, KIM SU HYUN, KANG HYUK, LEE JU AH, LIM JUN HAK, CHOI YOUNG JAE, Kim Su Hyun, Kang Hyuk, Lee Ju Ah, Lim Jun Hak, Choi Young Jae
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A method and electronic device implementing the same are disclosed herein. The electronic device includes a first communication module, a second communication module, a memory, and at least one processor operatively coupled to the memory. The at least one processor implements the method, including: receiving, via a first communication module, an initial setting request message from an external electronic device through a first communication channel, receiving, via a second communication module security key information from the external electronic device through a second communication channel; and transmitting subscription information for communicating with a network provider to the external electronic device, wherein the first communication channel and the second communication channel have different communication characteristics.

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Номер записи: 11
23-08-2016 дата публикации

Method and apparatus for forming coating layer with nano multi-layer

Номер: US0009422618B2
Автор: In Woong Lyo, Woong Pyo Hong, Kwang Hoon Choi, Hyuk Kang, Sang Jin Park, Yoon Suk Oh, LYO IN WOONG, HONG WOONG PYO, CHOI KWANG HOON, KANG HYUK, PARK SANG JIN, OH YOON SUK, Lyo In Woong, Hong Woong Pyo, Choi Kwang Hoon, Kang Hyuk, Park Sang Jin, Oh Yoon Suk
Принадлежит: Hyundai Motor Company, Hyundai Steel Company, LYO IN WOONG, HONG WOONG PYO, CHOI KWANG HOON, KANG HYUK, PARK SANG JIN, OH YOON SUK, HYUNDAI MOTOR CO LTD, HYUNDAI STEEL CO, Lyo In Woong, Hong Woong Pyo, Choi Kwang Hoon, Kang Hyuk, Park Sang Jin, Oh Yoon Suk

Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

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Номер записи: 12
20-12-2016 дата публикации

Image forming apparatus and image forming method

Номер: US0009523953B2
Автор: Jin Sil Kim, Jin Ha Jun, Hyuk Kang, Yun-Mo Kim, Sung Min Park, KIM JIN SIL, JUN JIN HA, KANG HYUK, KIM YUN-MO, PARK SUNG MIN, Kim Jin Sil, Jun Jin Ha, Kang Hyuk, Kim Yun-Mo, Park Sung Min
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

An image forming apparatus may include an image forming unit configured to form an image on a printing medium and a control unit configured to perform at least one of a user authentication operation, an image forming preparation operation, and an image forming operation according to distance information between a portable electronic device and the image forming apparatus.

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Номер записи: 13
15-08-2017 дата публикации

Apparatus and method for processing bluetooth data in portable terminal

Номер: US0009735861B2
Автор: Hyeong-Seok Kim, Hyuk Kang, Hyun-Chul Choi, KIM HYEONG-SEOK, KANG HYUK, CHOI HYUN-CHUL, Kim Hyeong-Seok, Kang Hyuk, Choi Hyun-Chul
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

An apparatus and a method for processing Bluetooth data in a portable terminal are provided. The apparatus includes a first control unit for transmitting a predetermined data transmission condition, a second control unit for receiving and storing the data transmission condition, for determining whether the data transmission condition is satisfied when data is received from an accessory through Bluetooth communication, and for transmitting the received data to the first control unit when the data transmission condition is satisfied as a result of the determination.

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Номер записи: 14
19-09-2017 дата публикации

Communication method and device

Номер: US9769686B2
Автор: KANG HYUK, LEE GEUN-HO, LEE SANG-HYUP, Kang Hyuk, Lee Geun-ho, Lee Sang-hyup
Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A communication method used by a first device that communicates with a second device is provided. The method includes detecting an occurrence of a predetermined event related to a device scan, scanning the second device that provides identifier information and capability information, establishing a first communication link with the scanned second device by using a first communication method, determining a second communication method for communicating data with the second device via the first communication link, and establishing a second communication link with the second device by using the determined second communication method.

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Номер записи: 15
13-06-2017 дата публикации

Bluetooth low energy (BLE) device and method for adjusting operation mode of application processor based on information communicated within BLE packet

Номер: US0009681381B2
Автор: Hyuk Kang, KANG HYUK, Kang Hyuk
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A method of broadcasting a Bluetooth Low Energy (BLE) packet, the method is provided. The method includes generating a random address that includes service identification information of a device, writing the generated random address to a header of the BLE packet, and broadcasting the BLE packet including the header where the generated random address is written, wherein the service identification information of the device includes information to switch an Application Processor (AP) in an external device that receives the BLE packet from a sleep mode to an awake mode.

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Номер записи: 16
17-11-2016 дата публикации

MULTI-LAYER COATING AND METHOD FOR FORMING THE SAME

Номер: US20160333462A1
Автор: Woong Pyo Hong, Hyuk Kang, In Woong Lyo, Kwang Hoon Choi, HONG WOONG PYO, KANG HYUK, LYO IN WOONG, CHOI KWANG HOON, Hong Woong Pyo, Kang Hyuk, Lyo In Woong, Choi Kwang Hoon
Принадлежит:

Disclosed is a multi-layer coating formed by repeatedly and sequentially laminating first coating layers composed of TiN and second coating layers composed of TiAgN on a surface, and a method of forming the same.

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Номер записи: 17
18-10-2016 дата публикации

Aluminum alloy for continuous casting and method for producing the same

Номер: US0009469888B2
Автор: Hoon Mo Park, Hyuk Kang, PARK HOON MO, KANG HYUK, Park Hoon Mo, Kang Hyuk
Принадлежит: Hyundai Motor Company, Kia Motors Corporation, PARK HOON MO, KANG HYUK, HYUNDAI MOTOR CO LTD, KIA MOTORS CORP, Park Hoon Mo, Kang Hyuk

The present disclosure provides an aluminum (Al) alloy for continuous casting, and a method of making the same. The Al alloy includes Al, Si in the range of 14 to 20 wt %, Ti in the range of 2 to 7 wt % and B in the range of 1 to 3 wt %. According to the disclosure, TiB2 compound may be formed in the alloy, where the ratio of Ti:B may range from 2 to 2.5 wt %. By a process of continuously casting the molten metal, an aluminum alloy with improved elasticity may be produced.

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Номер записи: 18
22-08-2017 дата публикации

Method for controlling and an electronic device thereof

Номер: US0009743222B2
Автор: Jong-Ho Choi, Hyuk Kang, Kyung-Soo Lim, Min-Ji Kim, Jae-Bong Yoo, Seung-Young Jeon, Duk-Ki Hong, Sang-Don Kim, CHOI JONG-HO, KANG HYUK, LIM KYUNG-SOO, KIM MIN-JI, YOO JAE-BONG, JEON SEUNG-YOUNG, HONG DUK-KI, KIM SANG-DON, Choi Jong-Ho, Kang Hyuk, Lim Kyung-Soo, Kim Min-Ji, Yoo Jae-Bong, Jeon Seung-Young, Hong Duk-Ki, Kim Sang-Don
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A control method and an electronic device thereof are provided. A first electronic device can include a communication unit and a control unit configured to perform providing device identification information to a second electronic device based on a beacon received from the second electronic device through the communication unit, and conducting at least one function corresponding to the signal received from the second electronic device.

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Номер записи: 19
11-05-2017 дата публикации

ELECTRONIC DEVICE AND METHOD FOR SELECTING AREA ASSOCIATED WITH CONTENT

Номер: US20170131896A1
Автор: Taegun Park, Hyuk Kang, Taeho Kim, Hyesun Kim, Heejun Kim, Jeongmin Park, Jaeseok Joo, Inji Jin, PARK TAEGUN, KANG HYUK, KIM TAEHO, KIM HYESUN, KIM HEEJUN, PARK JEONGMIN, JOO JAESEOK, JIN INJI, Park Taegun, Kang Hyuk, Kim Taeho, Kim Hyesun, Kim Heejun, Park Jeongmin, Joo Jaeseok, Jin Inji
Принадлежит:

An electronic device and method for selecting an area of a content using pressure-sensitive touch technology. An embodiment for selecting an area of content using the pressure-sensitive technology includes displaying a content on a display, sensing user input on a region of the content being displayed, and measuring a level of pressure applied by the user input on the region. Then, in response to the measured level of pressure being a first value, selecting a first range of the content. However, in response to the measured level of pressure being a second value, selecting a second range of the content. Finally, displaying an indication to the selected first range or second range on the display. Selection of the first or second range may be on a basis of an attribute or property of an object in the region, and the selected range may be designated as a geofence area.

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Номер записи: 20
27-09-2016 дата публикации

Method and apparatus for receiving content based on status of terminal

Номер: US0009456295B2
Автор: Hyun-Chul Choi, Hyuk Kang, Hyeong-Seok Kim, CHOI HYUN-CHUL, KANG HYUK, KIM HYEONG-SEOK, Choi Hyun-Chul, Kang Hyuk, Kim Hyeong-Seok
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A terminal status-based content receiving method and an apparatus that receives a differential content based on a change in a status of a terminal are provided. The content receiving apparatus includes a low-power short range communication unit, and a controller configured to determine a status of the terminal, to include status information of the terminal in an advertising packet so as to periodically broadcast the advertising packet through the low-power short range communication unit, and to receive content corresponding to the status of the terminal from an external device that scans the advertising packet.

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Номер записи: 21
05-06-2013 дата публикации

Method for producing coating layer with low-friction

Номер: CN103132029A
Автор: Lyo In-woong, Hong Woong-pyo, Choi Kwang-hong, Kang Hyuk
Принадлежит:

In a method for producing a coating layer using plasma which includes heating, buffer layer coating, coating and cooling, a method for producing a coating layer with low-friction comprises: a coating step of forming TiAgN coating layer on the surface of a base material using Ti arc source and Ag sputtering source at a certain coating temperature; a fraction increase step of increasing the Ag fraction on the surface by increasing bias voltage and sputtering power for a certain time period; and a nano-forming step of forming Ag nanoparticles on the surface by maintaining the temperature at 50~100 DEG C. higher than the certain coating temperature for a certain time period.

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Номер записи: 22
02-02-2012 дата публикации

Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device

Номер: US20120028428A1
Автор: Kang Jong-Hyuk, Lee Jong-Wook, Son Yong-Hoon
Принадлежит:

A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns. 1. A method of manufacturing a vertical pillar semiconductor device comprising:forming a group of channel patterns on a substrate divided into an active region and an isolation layer, the group of channel patterns arranged parallel to each other and a first impurity region formed in the substrate corresponding to the active region;forming a gate insulation layer on a surface of the substrate and a sidewall of the group of channel patterns, the gate insulation layer spaced apart from an upper face of the group of channel patterns; andforming a gate electrode contacting the gate insulation layer and enclosing a sidewall of the group of channel patterns.2. The method of claim 1 , wherein forming the group of channel patterns includes:forming a first sacrificial layer pattern exposing the active region;forming amorphous silicon spacers on a sidewall of the first sacrificial layer pattern;forming a second sacrificial layer pattern to fill a gap between the amorphous silicon spacers; andperforming phase-transition of the amorphous silicon spacers into single crystalline silicon.3. The method of claim 2 , wherein the ...

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Номер записи: 23
02-02-2012 дата публикации

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20120028450A1
Автор: Kang Jong-Hyuk, Lee Jong- Wook, Son Yong-Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. 1. A method of manufacturing a vertical type semiconductor device , comprising:forming an insulation layer structure including a trench on a substrate, the trench having a linear shape to partially expose a surface of the substrate;forming a preliminary single-crystalline semiconductor pattern on a sidewall of the trench;forming an insulation layer to fill the trench;forming transistors on a sidewall of the preliminary single-crystalline semiconductor pattern; andpartially removing the insulation layer pattern and the preliminary single-crystalline semiconductor pattern, to form a single-crystalline semiconductor pattern having a pillar shape.2. A method of manufacturing a vertical-type non-volatile memory device , comprising:forming an insulation layer structure including a trench on a substrate, the trench having a linear shape to partially expose a surface of the substrate;forming an insulation layer pattern having a linear shape in the trench, the insulation layer pattern being spaced apart from a sidewall of the trench;forming a preliminary single-crystalline semiconductor pattern on both sidewalls of the trench to fill the trench, the preliminary single-crystalline semiconductor pattern having a pillar shape;forming a tunnel oxide layer on a sidewall of the preliminary single-crystalline semiconductor pattern;forming a charge-trapping layer and a blocking dielectric layer on the tunnel oxide layer; ...

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Номер записи: 24
01-03-2012 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20120049257A1
Автор: Cha Hyun-Joo, Choi Jin, Kang Jong-Hyuk, LEE Sungho, Park Tae-Jung, Yoo Yong-Ho
Принадлежит:

A DRAM device can include a plurality of capacitors that are arranged in a line in a first direction. Each of the capacitors can include an upper electrode. A contact pattern having a line shape can extend in the first direction and can be electrically connected to each of the upper electrodes. A conductor can be on the contact pattern opposite the upper electrodes and can be electrically connected to the contact pattern. 1. A semiconductor device comprising:a plurality of capacitors each including a lower electrode, an upper electrode on the lower electrode, and a dielectric layer between the upper and lower electrodes;a contact pattern having a line shape extending in a direction, electrically connected to the upper electrodes; anda wire electrically connected to the contact pattern.2. The semiconductor device of claim 1 , wherein a major axis direction of the upper electrode is the direction and the contact pattern has an extension length equal to or less than a length of the major axis of the upper electrode.3. The semiconductor device of claim 1 , wherein a width of the contact pattern becomes progressively less toward a bottom of the contact pattern.4. The semiconductor device of claim 1 , wherein the lower electrodes are spaced apart from one another along the direction.5. The semiconductor device of claim 1 , wherein the upper electrodes in the capacitors comprise flat upper surfaces that are about equal to one another in height.6. The semiconductor device of claim 1 , wherein the wire extends in the direction and has an extension length greater than an extension length of the contact pattern.7. A semiconductor device comprising:a substrate including an active region having a major axis in a first direction;a plurality of transistors on the substrate, each including conductive patterns extending in a second direction perpendicular to the first direction, and first and second impurity regions on opposing sides of each of the conductive patterns;bit lines ...

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Номер записи: 25
15-03-2012 дата публикации

METHODS OF FORMING A CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

Номер: US20120064680A1
Автор: Choi Gyu-Wan, Kang Dae-Hyuk, Kim Young-Hoo, Lee Dong-Seok, Lee Kun-tack, Oh Jung-min, Park Im-Soo, Yoon Bo-Un
Принадлежит:

A method of forming a capacitor structure and manufacturing a semiconductor device, the method of forming a capacitor structure including sequentially forming a first mold layer, a supporting layer, a second mold layer, an anti-bowing layer, and a third mold layer on a substrate having a conductive region thereon; partially removing the third mold layer, the anti-bowing layer, the second mold layer, the supporting layer, and the first mold layer to form a first opening exposing the conductive region; forming a lower electrode on a sidewall and bottom of the first opening, the lower electrode being electrically connected to the conductive region; further removing the third mold layer, the anti-bowing layer, and the second mold layer; partially removing the supporting layer to form a supporting layer pattern; removing the first mold layer; and sequentially forming a dielectric layer and upper electrode on the lower electrode and the supporting layer pattern. 1. A method of forming a capacitor structure , the method comprising:sequentially forming a first mold layer, a supporting layer, a second mold layer, an anti-bowing layer, and a third mold layer on a substrate having a conductive region thereon;partially removing the third mold layer, the anti-bowing layer, the second mold layer, the supporting layer, and the first mold layer to form a first opening exposing the conductive region;forming a lower electrode on a sidewall and a bottom of the first opening, the lower electrode being electrically connected to the conductive region;further removing the third mold layer, the anti-bowing layer, and the second mold layer;partially removing the supporting layer to form a supporting layer pattern;removing the first mold layer; andsequentially forming a dielectric layer and an upper electrode on the lower electrode and the supporting layer pattern.2. The method as claimed in claim 1 , wherein the anti-bowing layer is formed using silicon oxynitride (SiON) or silicon nitride ...

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Номер записи: 26
12-04-2012 дата публикации

Method of manufacturing vertical semiconductor device

Номер: US20120088343A1
Автор: Jong-Hyuk Kang, Jong-wook Lee, Yong-Hoon Son
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A vertical semiconductor device, a DRAM device, and associated methods, the vertical semiconductor device including single crystalline active bodies vertically disposed on an upper surface of a single crystalline substrate, each of the single crystalline active bodies having a first active portion on the substrate and a second active portion on the first active portion, and the first active portion having a first width smaller than a second width of the second active portion, a gate insulating layer on a sidewall of the first active portion and the upper surface of the substrate, a gate electrode on the gate insulating layer, the gate electrode having a linear shape surrounding the active bodies, a first impurity region in the upper surface of the substrate under the active bodies, and a second impurity region in the second active portion.

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Номер записи: 27
14-06-2012 дата публикации

PHOTOMASKS AND METHODS OF MANUFACTURING THE SAME

Номер: US20120148944A1
Автор: Han Sung-Jae, JEON Chan-uk, Kang Dae-Hyuk, KIM Jung-jin, Ko Hyung-Ho, OH Jong-Keun
Принадлежит:

In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern. 1. A method of manufacturing a photomask , comprising:forming a light-shielding layer pattern and an anti-reflective layer pattern sequentially on a transparent substrate; andoxidating and nitridating a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.2. The method of claim 1 , wherein the oxidating and the nitridating the sidewall of the light-shielding layer pattern are performed by a plasma treatment using oxygen (O) gas and nitrogen (N) gas as a reactive gas.3. The method of claim 2 , wherein a mixing ratio of the oxygen gas and the nitrogen gas is within about 1:5 to about 1:8.4. The method of claim 2 , wherein the plasma treatment is performed in a chamber maintained at a temperature of about 200 to about 400° C.5. The method of claim 1 , wherein the light-shielding layer pattern includes at least one selected from chromium (Cr) claim 1 , aluminum (Al) claim 1 , rubidium (Rb) claim 1 , tantalum (Ta) claim 1 , tantalum boron oxide (TaBO) and tantalum boron nitride (TaBN).6. The method of claim 1 , wherein the light-shielding layer pattern includes chromium.7. The method of claim 6 , wherein the protection layer pattern includes a mixture of chromium oxide (CrOx) claim 6 , and chromium nitride (CrNx) or chromium oxynitride (CrNOx).8. The method of claim 1 , wherein the anti-reflective layer pattern includes at least one of chromium oxide (CrOx) claim 1 , chromium nitride (CrNx) claim 1 , titanium nitride (TiN) and titanium oxide (TiOx).9. The method of claim 1 , wherein the protection layer pattern is not etched by ...

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Номер записи: 28
01-11-2012 дата публикации

CONTROLLING DISPLAY SETTING ACCORDING TO EXTERNAL DEVICE CONNECTED TO USER EQUIPMENT

Номер: US20120274656A1
Автор: CHA Jae-Uk, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin
Принадлежит:

Provided is controlling a display setting according to an external device connected to user equipment. Such controlling may include displaying image data on a first display unit of the user equipment based on a first display setting, sensing a connection between the user equipment and the external device, obtaining display unit information from the external device, determining the second display setting based on the obtained display unit information, reconfiguring the image data according to the determined second display setting, and displaying the reconfigured image data on a second display unit of the external device based on a presence of the sensed connection. 1. A method for controlling a display setting at user equipment connected to an external device , the method comprising:displaying image data on a first display unit of the user equipment based on a first display setting;sensing a connection between the user equipment and the external device;obtaining display unit information from the external device;determining a second display setting based on the obtained display unit information;reconfiguring the image data according to the determined second display setting; anddisplaying the reconfigured image data on a second display unit of the external device based on a presence of the sensed connection.2. The method of claim 1 , wherein the determining the second display setting includes:extracting a screen size and a screen resolution of the second display unit from the obtained display unit information;selecting a dots per inch (DPI) value from a DPI table based on the extracted screen size and the extracted screen resolution of the second display unit; anddetermining the second display setting based on the selected DPI value,wherein the DPI table includes a plurality of DPI values associated with a plurality of screen sizes and screen resolutions.3. The method of claim 2 , wherein the reconfiguring the image data includes:determining a screen layout based the ...

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Номер записи: 29
29-11-2012 дата публикации

METHOD AND APPARATUS FOR MANUFACTURING PANELS FOR VEHICLES

Номер: US20120297851A1
Автор: CHO Min Haeng, Hong Woong Pyo, Kang Hyuk, Lyo In Woong, Yoon Seung Chae
Принадлежит:

Disclosed herein is a method and apparatus for manufacturing a panel for a vehicle. When a steel sheet is machined to form a panel for a vehicle, a blanking-texturing machine conducts a blanking process for cutting the steel sheet and a texturing process for forming depressions in the steel sheet at the same time. Therefore, the present invention reduces the number of manufacturing processes, thus enhancing the productivity, and reducing the production cost and provides a steel sheet with uniform depressions across the surface of the steel sheet, thereby reducing the coefficient of friction during the pressing process consistently. 1. A method for manufacturing a panel for a vehicle , comprising:blanking-texturing a steel sheet in such a way that when the steel sheet is cut by blanking into a shape corresponding to the panel for the vehicle, a plurality of depressions are simultaneously formed in a surface of the steel sheet; andpressing the resulting steel sheet having the depressions to form the panel for the vehicle.2. The method as set forth in claim 1 , wherein the depressions are formed in either of both sides of the steel sheet.3. The method as set forth in claim 1 , wherein the depressions are formed in both sides of the steel sheet.4. The method as set forth in claim 1 , wherein each of the depressions has a size ranging from about 50 μm to 200 μm.5. The method as set forth in claim 1 , wherein a density of the depressions with respect to a surface area of one side of the steel sheet ranges from about 1% to 20%.6. An apparatus for manufacturing a panel for a vehicle claim 1 , comprising:a blanking-texturing machine configured to cut a steel sheet into a shape corresponding to the panel for the vehicle on a cutting surface, and simultaneously form, by a depression forming portion of the blanking-texturing machine, depressions in a surface of the steel sheet while the steel sheet is being cut; anda press machining the resulting steel sheet having the ...

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Номер записи: 30
03-01-2013 дата публикации

USER EQUIPMENT CONNECTABLE TO AN EXTERNAL DEVICE

Номер: US20130007301A1
Автор: CHA Jae-Uk, Jung Hyuk-Jun, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin, Kim Byeong-Tae, LEE Jung-Wook
Принадлежит:

Provided are user equipment connectable to an external device and a method for establishing a connection between user equipment including second constituent elements and an external device including first constituent elements and controlling the external device. The method may include sensing the connection to the external device, obtaining first constituent element information from the external device through the connection, wherein the first constituent element information includes information on first constituent elements of the external device, selecting target constituent elements to control from the first constituent elements of the external device based on the obtained first constituent element information, reconfiguring a control path for controlling the selected target constituent elements of the external device, and controlling the selected target constituent elements of the external device through the reconfigured control path. 1. A method for establishing a connection between user equipment including second constituent elements and an external device including first constituent elements and controlling the external device , the method comprising:sensing the connection to the external device;obtaining first constituent element information from the external device through the connection, wherein the first constituent element information includes information on first constituent elements of the external device;selecting target constituent elements to control from the first constituent elements of the external device based on the obtained first constituent element information;reconfiguring a control path for controlling the selected target constituent elements of the external device; andcontrolling the selected target constituent elements of the external device through the reconfigured control path.2. The method of claim 1 , wherein the sensing the connection to the external device includes:supplying power to the external device when a coupling interface of ...

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Номер записи: 31
03-01-2013 дата публикации

CONTROLLING AN EXTERNAL DEVICE CONNECTED TO USER EQUIPMENT

Номер: US20130007307A1
Автор: CHA Jae-Uk, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin, LEE Jung-Wook, Park Kyeong-Sik
Принадлежит:

Provided is a method for controlling and driving constituent elements of an external device connected to user equipment. The method may include obtaining external device information from the external device when coupled to the user equipment, obtaining application information based on the obtained external device information, and running an application tailored for the external device based on the obtained application information. 1. A method for controlling and driving constituent elements of an external device connected to user equipment , the method comprising:obtaining external device information from the external device when coupled to the user equipment;obtaining application information based on the obtained external device information; andrunning an application tailored for the external device based on the obtained application information.2. The method of claim 1 , further comprising:transmitting operation results produced by the tailored application to the external device; andcontrolling and driving constituent elements of the external device based on the operation results.3. The method of claim 2 , wherein the constituent elements of the external device include at least one of a display unit claim 2 , an audio output unit claim 2 , an input unit claim 2 , a sensing unit claim 2 , and a video processing unit claim 2 , and an audio and video capturing unit.4. The method of claim 1 , further comprising:transmitting operation results produced by the tailored application to the external device; andproviding the operation results through constituent elements of the external device.5. The method of claim 4 , comprising:providing video data and audio data produced as the operation results of the tailored application through at least one of a display unit and an audio unit of the external device.6. The method of claim 1 , wherein:the external device information includes device type information and universal serial bus (USB) device information;the device type ...

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Номер записи: 32
17-01-2013 дата публикации

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20130015559A1
Автор: Cha Hyun-Joo, Choi Jin, Kang Jong-Hyuk, Lee Sung-Ho, Park Hee-Dong, Park Tae-Jung, Yoo Yong-Ho
Принадлежит:

A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction. 1. A semiconductor device , comprising:a plurality of lower electrodes on a substrate, each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction;a plurality of first supporting layer patterns extending in the first direction between ones of the lower electrodes that are adjacent to each other in the second direction, the first supporting layer patterns contacting the sidewalls of the ones of the lower electrodes that are adjacent to each other in the second direction; anda plurality of second supporting layer patterns extending in the second direction between ones of the lower electrodes that are adjacent to each other in the first direction, the second supporting layer pattern contacting the sidewalls of the ones of the lower electrodes that are adjacent to each other in the second direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in ...

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Номер записи: 33
28-02-2013 дата публикации

CONTROLLING USER EQUIPMENT AS TOUCH PAD FOR EXTERNAL DEVICE CONNECTED THERETO

Номер: US20130050122A1
Автор: CHA Jae-Uk, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin, LEE Jung-Wook
Принадлежит:

Provided is a method for controlling user equipment as a touch pad for an external device connected to the user equipment. An operation mode may be changed to a pointing device operation mode when the user equipment is coupled to the external device. In the pointing device operation mode, a touch input may be received through a touch screen panel of the user equipment. A pointer may be displayed on a display unit of the external device corresponding to a coordinate value of the touch input made on the touch screen panel. An operation associated with the received touch input may be performed in the user equipment. 1. A method for controlling user equipment as a touch pad for an external device connected to the user equipment , the method comprising:changing an operation mode to a pointing device operation mode when the user equipment is coupled to the external device;receiving a touch input through a touch screen panel of the user equipment;displaying a pointer on a display unit of the external device corresponding to a coordinate value of the touch input made on the touch screen panel; andperforming an operation associated with the received touch input.2. The method of claim 1 , wherein the changing an operation mode to a pointing device operation mode includes:detecting that a physical connection is established between the user equipment and the external device based on a detection signal generated in a port unit of the user equipment; andautomatically initiating the pointing device operation mode upon the detection of the physical connection.3. The method of claim 1 , wherein the changing an operation mode to a pointing device operation mode includes:detecting that a physical connection is established between the user equipment and the external device based on a detection signal generated in a port unit of the user equipment;determining whether an initiation input is received after the detecting of the physical connection;initiating the pointing device operation ...

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Номер записи: 34
14-03-2013 дата публикации

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20130065381A1
Автор: Kang Jong-Hyuk, Lee Jong- Wook, Son Yong-Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. 1. A method of manufacturing a vertical-type non-volatile memory device , comprising:alternatively stacking two different layers on a substrate to form a multi-layered structure,forming a trench penetrating the different layers vertically with respect to the substrate;forming a tunnel oxide layer, a charge-trapping layer and a blocking dielectric layer in the trench;forming a semiconductor layer in the trench;forming a layer including metal on the semiconductor layer;thermally treating the layer including metal and the semiconductor layer; andremoving the layer including metal.2. The method of claim 1 , wherein forming the multi-layered structure comprises:partially etching the stacked layers of sacrificial layers and insulation interlayers to form an opening that has a linear shape extending in a first direction and exposes a surface of the substrate;forming an insulation layer pattern in the opening, the insulation layer pattern being spaced apart from a sidewall of the opening;forming a semiconductor pattern on both sidewalls of the opening to fill the opening, the semiconductor pattern having a pillar shape;3. The method of claim 2 , wherein forming the trench penetrating the different layers comprises:removing a portion of the multi-layered structure between the semiconductor patterns to form a first opening that extends in a first direction; andremoving the sacrificial layer exposed through the first ...

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Номер записи: 35
16-05-2013 дата публикации

COATING LAYER WITH LOW-FRICTION FOR VEHICLE COMPONENT AND METHOD FOR PRODUCING THE SAME

Номер: US20130122315A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong
Принадлежит: HYUNDAI MOTOR COMPANY

The present invention provides a low-friction coating layer for vehicle components comprising: a Ti layer on a surface of a base material; a TiN layer on the Ti layer surface; a TiAgN layer on the TiN layer surface; and an Ag layer transferred on the TiAgN layer surface, and a method for producing the same. 1. A low-friction coating layer , comprising:a Ti layer;a TiN layer;a TiAgN layer, wherein the TiN layer is sandwiched between the Ti layer and the TiAgN layer; andan Ag layer transferred onto the TiAgN layer surface.2. The low-friction coating layer of claim 1 , wherein the Ti layer is deposited on a base material surface by a Ti arc source; the TiN layer is deposited on the Ti layer by a Ti arc source in nitrogen gas; the TiAgN layer is deposited on the TiN layer surface by a Ti arc source claim 1 , an Ag sputtering source claim 1 , and nitrogen gas; and an Ag layer is transferred into the TiAgN layer surface by shearing and vertical loads after being deposited on the TiAgN layer surface by an Ag sputtering source.3. The low-friction coating layer of claim 1 , wherein the thicknesses of the Ti layer claim 1 , the TiN layer claim 1 , the TiAgN layer and the transferred Ag layer range from 0.08 to 0.15 μm claim 1 , 0.05 to 0.1 μm claim 1 , 1.5 to 2 μm claim 1 , and 0.1 μm or less claim 1 , respectively.4. The low-friction coating layer of claim 3 , wherein the Ag layer ranges from 0.1 to 0.0000000001 μm.5. A method for producing the low-friction coating layer of comprising:(a) cleaning a base material surface;(b) preparing the internal atmosphere of a deposition chamber to a vacuum/high temperature atmosphere;(c) depositing the Ti layer on the base material surface by a Ti arc source;(d) depositing the TiN layer on the Ti layer surface by a Ti arc source and nitrogen gas;(e) depositing a TiAgN layer on the TiN layer surface by a Ti arc source, an Ag sputtering source, and nitrogen gas; and(f) depositing an Ag layer on the TiAgN layer surface by an Ag sputtering ...

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Номер записи: 36
30-05-2013 дата публикации

METHOD AND APPARATUS FOR FORMING COATING LAYER WITH NANO MULTI-LAYER

Номер: US20130134033A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong, Oh Yoon Suk, PARK Sang Jin
Принадлежит:

Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and Ngas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, Ngas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot. 1. In a method for forming a coating layer with a nano multi-layer comprising:a first coating step of forming a Mo coating layer on a base material using a sputtering apparatus and a Mo target and Ar gas;{'sub': '2', 'a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and an Ar gas and Ngas;'}{'sub': '2', 'a second coating step of forming a nano composite coating layer comprising Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, Ngas and a Cr source of the arc ion plating apparatus at the same time; and'}a multi-coating step of coating a multi-layer having alternating layers of a Cr—Mo—N nano composite coating layer and a Mo coating layer by revolving the base material around a central pivot.2. The method of claim 1 , wherein in the multi-coating step claim 1 , an angle between central axes of the sputtering apparatus and arc ion plating apparatus is maintained at about 60˜120°.3. The method of claim 1 , wherein in the multi-coating step claim 1 , a bias voltage added to the base material is about −250˜−150 V.4. The method of claim 1 , wherein in the multi- ...

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Номер записи: 37
30-05-2013 дата публикации

METHOD OF MANUFACTURING A VERTICAL-TYPE SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A VERTICAL-TYPE SEMICONDUCTOR DEVICE

Номер: US20130134501A1
Автор: Kang Jong-Hyuk, Lee Jong-Wook, Son Yong-Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes. 1. A semiconductor device , comprising:a semiconductor pattern provided on a substrate;a gate adjacent to a sidewall of the semiconductor pattern, the gate having an upper surface lower than an upper surface of the semiconductor pattern;a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the semiconductor pattern;a first impurity region in the substrate under the semiconductor pattern; anda second impurity region under the upper surface of the semiconductor pattern.2. The semiconductor device of claim 1 , further comprising an insulation layer pattern is provided on the substrate and a lower surface of the gate.3. The semiconductor device of claim 1 , wherein the mask pattern includes insulating material.4. The semiconductor device of claim 1 , wherein the gate comprises a gate insulation layer ...

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Номер записи: 38
30-05-2013 дата публикации

ALUMINUM ALLOY FOR CONTINUOUS CASTING AND METHOD FOR PRODUCING THE SAME

Номер: US20130136652A1
Автор: Kang Hyuk, PARK Hoon Mo
Принадлежит:

The present disclosure provides an aluminum (Al) alloy for continuous casting, and a method of making the same. The Al alloy includes Al, Si in the range of 14 to 20 wt %, Ti in the range of 2 to 7 wt % and B in the range of 1 to 3 wt %. According to the disclosure, TiBcompound may be formed in the alloy, where the ratio of Ti:B may range from 2 to 2.5 wt %. By a process of continuously casting the molten metal, an aluminum alloy with improved elasticity may be produced. 1. An aluminum alloy , comprising Al , Si in the range of 14 to 20 wt % , Ti in the range of 2 to 7 wt % , and B in the range of 1 to 3 wt %.2. The aluminum alloy of claim 1 , wherein a TiBcompound is formed therein.3. The aluminum alloy of claim 1 , further comprising: Fe in the range of 0.5 wt % or less claim 1 , Cu in the range of 4 to 5 wt % claim 1 , Mn in the range of 0.1 wt % or less claim 1 , Mg in the range of 0.45 to 0.65 wt % claim 1 , and Zn in the range of 0.1 wt % or less.4. The aluminum alloy of claim 3 , wherein the amount of Fe claim 3 , Mn claim 3 , and Zn is more than 0 wt %.5. The aluminum alloy of claim 1 , wherein the ratio of B:Ti is 1:2 to 2.5.6. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.7. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.1.8. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.2.9. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.3.10. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.4.11. The aluminum alloy of claim 5 , wherein the ratio of B:Ti is 1:2.5.12. A method for producing an aluminum alloy for continuous casting comprising:mixing a molten Al—Ti-based alloy comprising Ti 5˜10 wt % and a molten Al—B-based alloy comprising B 2˜10 wt % together.13. The method of claim 12 , wherein the molten AlTi and AlB are mixed in a tundish.14. The method of claim 12 , further comprising continuously casting the molten metal claim 12 , thereby producing the aluminum alloy. This ...

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Номер записи: 39
30-05-2013 дата публикации

METHOD FOR PRODUCING COATING LAYER WITH LOW-FRICTION

Номер: US20130136896A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong
Принадлежит: HYUNDAI MOTOR COMPANY

In a method for producing a coating layer using plasma which includes heating, buffer layer coating, coating and cooling, a method for producing a coating layer with low-friction comprises: a coating step of forming TiAgN coating layer on the surface of a base material using Ti arc source and Ag sputtering source at a certain coating temperature; a fraction increase step of increasing the Ag fraction on the surface by increasing bias voltage and sputtering power for a certain time period; and a nano-forming step of forming Ag nanoparticles on the surface by maintaining the temperature at 50˜100° C. higher than the certain coating temperature for a certain time period. 1. In a method for producing a low-friction coating layer on the surface of a base material using plasma which comprises:a low-friction coating layer step of forming a TiAgN coating layer on the surface of the base material using a Ti arc source and an Ag sputtering source at a certain coating temperature, the low-friction coating layer step further includinga fraction increase step of increasing an Ag fraction on the surface by increasing a bias voltage and sputtering power for a certain time period, anda nano-forming step of forming Ag nanoparticles on the surface by maintaining a temperature at a certain temperature higher than the coating temperature for a certain time period.2. The method of claim 1 , wherein in the coating step claim 1 , the coating temperature is about 250˜350° C.3. The method of claim 1 , wherein in the fraction increase step claim 1 , the bias voltage and sputtering power are increased for about 3˜7 min.4. The method of claim 1 , wherein in the nano-forming step claim 1 , the temperature is maintained at about 50˜100° C. higher than the coating temperature for about 10˜20 min.5. The method of claim 1 , further comprising claim 1 , after the nano-forming step claim 1 , a cooling step of cooling to room temperature.6. The method of claim 1 , which further comprises claim 1 , ...

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Номер записи: 40
27-06-2013 дата публикации

CONTROLLING APPLICATIONS ACCORDING TO CONNECTION STATE AND EXECUTION CONDITION

Номер: US20130166790A1
Автор: AHN Ji-Yong, CHA Jae-Uk, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin, LEE Jung-Wook, PARK Jung-Suk
Принадлежит: KT CORPORATION

The disclosure is related to controlling an application execution in user equipment. A user request for executing an application may be received. An execution condition may be obtained associated with the requested application. Whether the user equipment is connected to an external device may be detected. An execution of the requested application may be controlled based on a detection result and the obtained execution condition. 1. A method of controlling an application execution in user equipment , the method comprising:receiving a user request for executing an application;obtaining an execution condition associated with the requested application;detecting whether the user equipment is connected to an external device; andcontrolling an execution of the requested application based on a detection result and the obtained execution condition.2. The method of claim 1 , further comprising:setting at least one execution condition associated with at least one application installed in the user equipment.3. The method of claim 2 , wherein the execution condition includes at least one of a standalone execution condition claim 2 , a disconnected execution condition claim 2 , and a device-related execution condition.4. The method of claim 3 , wherein the execution conditions associated with an application is included in an installation file of the application when the application is installed in the user equipment.5. The method of claim 3 , wherein:an application set with the standalone execution condition is allowed to be executed when the user equipment is not coupled to the external device;an application set with the disconnected execution condition is allowed to be executed when the user equipment is coupled to the external device; andan application set with the device-related execution condition is allowed to be executed when the device-related execution condition satisfies with at least one property of one of the user equipment and the external device.6. The method of ...

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Номер записи: 41
27-06-2013 дата публикации

RESTRICTING OPERATION RESULTS FROM BEING TRANSFERRED TO COUPLED EXTERNAL DEVICE

Номер: US20130167246A1
Автор: AHN Ji-Yong, CHA Jae-Uk, Kang Shin-Hyuk, KANG You-Jin, KOH Sang-Ho, LEE Jung-Wook, PARK Jung-Suk
Принадлежит: KT CORPORATION

Described embodiments provide a method and user equipment for restricting transferring of image data produced by a predetermined application to a coupled external device. The method may include detecting an activation of an application in a user equipment while the user equipment is coupled to an external device and determining whether image data produced by the activated application is transferred to the coupled external device. The determining may include restricting the produced image data of the activated application from being transferred to the coupled external device when an application control type of the activated application is a restricted application, otherwise, transferring the produced image data of the activated application to the coupled external device. 1. A method for restricting transferring of image data produced by a predetermined application to a coupled external device , the method comprising:detecting an activation of an application in a user equipment while the user equipment is coupled to an external device; anddetermining whether image data produced by the activated application is transferred to the coupled external device.2. The method of claim 1 , wherein the determining includes:restricting the produced image data of the activated application from being transferred to the coupled external device when an application control type of the activated application is a restricted application;otherwise, transferring the produced image data of the activated application to the coupled external device.3. The method of claim 2 , further comprising:providing a user interface for selecting at least one of applications installed in the user equipment to a user;receiving selection inputs from the user through the provided user interface;selecting applications based on the received selection inputs from the user;setting the operation control type of the selected applications as a restricted application;otherwise, setting the operation control type of ...

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Номер записи: 42
08-08-2013 дата публикации

SURFACE TREATMENT METHOD FOR COATING LAYER

Номер: US20130202811A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong
Принадлежит: HYUNDAI MOTOR COMPANY

Disclosed is a surface treatment method for producing a coating layer, which improves surface properties (e.g., low friction wear-resistance) of the coating layer at high temperature. The surface treatment method controls a process pressure during the formation of a coating layer to form a fine surface morphology with increased silver (Ag) content. The surface treatment method includes: heating a coated material in a chamber; removing foreign substances from the surface of the heated, coated material; forming a buffer layer on the surface of the coated material; and forming a coating layer on the buffer layer, wherein the process pressure is controlled during the formation of the coating layer to improve the surface properties at high temperatures. 1. A surface treatment method , comprising:placing a test piece to be coated in a chamber;heating the test piece at a temperature for a period of time removing foreign substances from the surface of the heated test piece with a solvent;forming at least one buffer layer on the surface of the coated material, wherein the at least one buffer layer comprises titanium (Ti); andforming a coating layer on the buffer layer,wherein the process pressure is controlled during formation of the coating layer.2. The method of claim 1 , wherein the temperature ranges from 300° C. to 500° C.3. The method of claim 1 , wherein the foreign substances are water and/or impurities.4. The method of claim 1 , wherein the period of time is 40 minutes or more.5. The method of claim 1 , wherein the period of time is about 40 minutes.6. The method of claim 1 , wherein the solvent is selected from the group consisting of ethanol and acetone.7. The method of claim 1 , further comprising etching the cleaned test piece with an ion gun for an etching time.8. The method of claim 7 , wherein the etching time is 20 minutes or more.9. The method of claim 1 , wherein the buffer layer comprises a first layer having a first lattice constant and a second layer ...

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Номер записи: 43
19-09-2013 дата публикации

LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF

Номер: US20130242228A1
Автор: CHO Hyun Min, Kang Jong Hyuk, PARK Hae Il, PARK JAE BYUNG, Yun Sung Sik
Принадлежит: Samsung Display Co., Ltd.

A wide viewing angle liquid crystal display includes color filters having a quantum dot and scattering particles and liquid crystal layer disposed in a microcavity, a distance between the color filter and the liquid crystal layer being sized to minimize display deterioration due to parallax. 1. A liquid crystal display , comprising:a backlight unit comprising a light source;a display panel comprising a liquid crystal layer disposed in a microcavity;a color filter configured to change a wavelength of light supplied from the light source to display a color;a lower polarizer located between the liquid crystal layer and the backlight unit; andan upper polarizer located between the liquid crystal layer and the color filter.2. The liquid crystal display of claim 1 , wherein:the display panel comprises an upper panel and a lower panel,the lower panel comprises the liquid crystal layer and the lower polarizer, andthe upper panel comprises the color filter.3. The liquid crystal display of claim 2 , wherein the upper polarizer is configurable to be located in either the upper panel or the lower panel.4. The liquid crystal display of claim 3 ,wherein the upper polarizer and the lower polarizer comprise a polarization element configured to generate polarization, andwherein the polarization element has a tri-acetyl-cellulose (TAC) layer.5. The liquid crystal display of claim 1 , wherein:the microcavity is shaped by a support layer,an alignment layer is formed on the support layer, andthe liquid crystal layer is aligned by the alignment layer.6. The liquid crystal display of claim 5 , wherein:a common electrode and a patterned insulating layer are over the support layer, anda liquid crystal injection hole is formed on the patterned insulating layer, the common electrode, and the support layer.7. The liquid crystal display of claim 1 , wherein the color filter comprises quantum dot particles configured to convert light supplied from the light source.8. The liquid crystal display ...

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Номер записи: 44
19-09-2013 дата публикации

METHOD FOR DETERMINING TRANSMISSION POWER IN MIMO SYSTEM BASED ON COOPERATIVE TRANSMISSION

Номер: US20130244716A1
Автор: BANG Jong Ho, CHOI Jin Hyeock, KANG Byung Chang, KANG Jin Kyu, KANG Joon Hyuk, LEE Byung Moo, LEE Nam Jeong
Принадлежит:

A method for determining a transmission power in a multi-input multi-output (MIMO) system based on a cooperative transmission is provided. The method includes setting a power constraint condition of a transmitter and target quality information of a receiver. The method further includes determining the transmission power to be allocated to the transmitter to transmit the data to the receiver based on the power constraint condition and the target quality information. 1. A transmission power determination method for each of transmitters in a multi-input multi-output (MIMO) system in which the transmitters transmit data to receivers , the transmission power determination method comprising:setting a power constraint condition of a transmitter and target quality information of a receiver; anddetermining a transmission power to be allocated to the transmitter to transmit the data to the receiver based on the power constraint condition and the target quality information.2. The transmission power determination method of claim 1 , wherein the determining comprises:determining the transmission power to be allocated to the transmitter to transmit the data to the receiver based on a beamforming vector of when the transmitter transmits the data to the receiver.3. The transmission power determination method of claim 2 , wherein the beamforming vector is a zero-forcing (ZF) beamforming vector.4. The transmission power determination method of claim 1 , further comprising:determining a transmission quality information of the receiver based on a beamforming vector of when the transmitter transmits the data to the receiver and the transmission power to be allocated to the transmitter to transmit the data to the receiver.5. The transmission power determination method of claim 1 , wherein the determining comprises:determining a total transmission power to be allocated to the transmitter; anddetermining the transmission power to be allocated to the transmitter to transmit the data to the ...

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Номер записи: 45
10-10-2013 дата публикации

Semi-auto closing apparatus and refrigerator having the same

Номер: US20130264930A1
Автор: II Young JUNG, Jae Kyoung JANG, Jong Hoon Oh, Sang Hyuk Kang, Sung Mo KIM, Youn Tae Shin
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A refrigerator which improves the structure of an auto closing apparatus, increases the sealing ability of a door, and omits mounting of a separate spring. The refrigerator includes at least one door opening and closing at least one storage chamber provided in a main body, at least one upper hinge module including a body part and an extension part rotatably coupled to the at least one door, at least one lower hinge module, a door cap installed on an upper portion of the at least one door and including a hinge receiving part, an auto close lever coupled to the door cap and has elasticity to transmit elastic force to the door, and a cam member including a cam surface contacting the auto close lever so that the auto close lever accumulates elastic force and then transmits the elastic force to the door when the door is closed.

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Номер записи: 46
14-11-2013 дата публикации

METHOD OF PREPARING IODINE SEED FOR TREATING EYE DISEASE OR CANCER, AND IODINE SEED PREPARED THEREBY

Номер: US20130302244A1
Автор: Choi Kang Hyuk, CHOI Sun Ju, LEE Jin-Hee, Nam Sung-Soo, Son Kwang Jae
Принадлежит: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

The present invention provides a technique for adsorbing I-125 on a support for treating cancer and a method of preparing an I-125 seed using the same. Since a method of preparing iodine according to the present invention uses an intermediate having phosphate-based, oxalate-based, or arsenate-based anions introduced thereinto, the intermediate has a substitution effect of iodine 3 to 5 times higher than that of a typically used intermediate having chlorine anions introduced thereinto. According to the substitution effect, control of a radiation dose may be possible during the manufacturing of an iodine seed and an iodine seed may be prepared within a shorter period of time. Also, since an amount of residual radioactive iodine may be decreased as a result of a large amount of adsorption, an amount of radioactive iodine (I-125) waste may be decreased, and the effect thereof may be also high environmentally. 1. A method of preparing an iodine seed for treating eye disease or cancer , the method comprising:forming an intermediate by introducing one type of anions selected from the group consisting of phosphates, oxalates, and arsenates into a surface of a support (step 1); andsubstituting the anions of the intermediate of step 1 with I-125 (step 2).2. The method as set forth in claim 1 , wherein the forming of the intermediate in step 1 is performed by introducing a support into a solution claim 1 , in which one type of anions selected from the group consisting of phosphates claim 1 , oxalates claim 1 , and arsenates is dissolved claim 1 , and stirring.3. The method as set forth in claim 1 , wherein the forming of the intermediate in step 1 is performed after cleaning the support with distilled water or nitric acid.4. The method as set forth in claim 1 , wherein the phosphate-based anions of step 1 are formed of one selected from the group consisting of phosphoric acid (HPO) claim 1 , lithium phosphate (LiPO) claim 1 , lithium dihydrogen phosphate (LiHPO) claim 1 , ...

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Номер записи: 47
05-12-2013 дата публикации

MAGNETIC ELEMENT WITH STORAGE LAYER MATERIALS

Номер: US20130320468A1
Автор: Kang Seung Hyuk, Li Xia, Zhu Xiaochun
Принадлежит: QUALCOMM INCORPORATED

According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers. 122.-. (canceled)23. A magnetic tunnel junction (MTJ) element , comprising:a reference ferromagnetic layer;a storage ferromagnetic layer comprising a Cobalt-Iron-Boron (CoFeB) ferromagnetic sub-layer coupled to a ferromagnetic auxiliary sub-layer through a non-magnetic sub-layer, wherein the ferromagnetic auxiliary sub-layer comprises a Cobalt-Iron (CoFe) sub-layer coupled to a Nickel-Iron (NiFe) sub-layer; andan insulating layer disposed between the reference layer and the storage ferromagnetic layer.24. The MTJ element of claim 23 , wherein the CoFe sub-layer of the ferromagnetic auxiliary sub-layer is between the NiFe sub-layer of the auxiliary layer and the non-magnetic sub-layer.25. The MTJ element of claim 23 , wherein the non-magnetic sub-layer is Ruthenium (Ru) and has a thickness in the range of about 2 Å to about 2 Å.26. The MTJ element of claim 23 , wherein the CoFeB ferromagnetic sub-layer is ferromagnetically coupled to the ferromagnetic auxiliary sub-layer.27. The MTJ element of claim 26 , wherein the non-magnetic sub-layer is Ruthenium (Ru) and has a thickness in the range of about 2 Å to about 5 Å.28. The MTJ element of claim 23 , wherein the CoFeB ferromagnetic sub-layer is anti-ferromagnetically coupled to the ferromagnetic auxiliary sub-layer.29. The MTJ element of claim 28 , wherein the non-magnetic sub-layer is Ruthenium (Ru) and has a thickness in the range of about 6 Å to about 10 Å.30. A magnetic tunnel junction (MTJ) element claim 28 , comprising:a reference ferromagnetic layer;a storage ferromagnetic layer comprising a Cobalt-Iron ...

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Номер записи: 48
05-12-2013 дата публикации

PROCESSING INPUT EVENT OF EXTERNAL DEVICE

Номер: US20130326092A1
Автор: CHA Jae-Uk, Jung Jae-Hun, Kang Shin-Hyuk, KANG You-Jin, KOH Sang-Ho, PARK Jung-Suk
Принадлежит: KT CORPORATION

The disclosure is related to processing an input event of an external device in user equipment. Coupling event data may be received from the external device coupled to the user equipment. An input event type associated with the received coupling event data may be identified. Input event data may be obtained from the received coupling event data. The obtained input event data may be processed using at least one of an input application programming interface (API) and an input sub-device driver, according to the identified input event type. 1. A method of processing an input event of an external device in user equipment , the method comprising:receiving coupling event data from the external device coupled to the user equipment;identifying an input event type associated with the received coupling event data;obtaining input event data from the received coupling event data; andprocessing the obtained input event data using at least one of an input application programming interface (API) and an input sub-device driver, according to the identified input event type.2. The method of claim 1 , further comprising:reconfiguring a device control path in association with the external device.3. The method of claim 2 , wherein the reconfiguring includes:receiving external sub-device information on at least one external sub-device included in the external device, from the external device;selecting at least one external sub-device to be controlled by the user equipment, among the at least one external sub-device;obtaining sub-device information on at least one sub-device of user equipment corresponding to the selected at least one external sub-device;transmitting the obtained sub-device information to the external device; andreconfiguring the device control path such that a corresponding external sub-device may be controlled.4. The method of claim 1 , wherein at least one of a structure and a size of the coupling event data is determined based on at least one of a data transmission ...

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Номер записи: 49
19-12-2013 дата публикации

Photoluminescence display device

Номер: US20130335799A1
Автор: Dae Hyun Kim, Dong-Hoon Lee, Haeil Park, Hyun Min Cho, Jae Byung PARK, Jong Hyuk KANG, Minki NAM, Mun-Ki SIM, Seon-Tae Yoon
Принадлежит: Samsung Display Co Ltd

A display device includes a light source unit that emits a first light with a first wavelength, an optical filter that converts the first light to a second light, and an optical shutter that transmits or reflects the first light or the second light.

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Номер записи: 50
23-01-2014 дата публикации

METHODS OF INTEGRATED SHIELDING INTO MTJ DEVICE FOR MRAM

Номер: US20140021570A1
Автор: Chen Wei-Chuan, Kang Seung Hyuk, Li Xia
Принадлежит: QUALCOMM INCORPORATED

Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via. 1. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus , comprising: a first electrode;', 'one or more pinned layers on the first electrode;', 'a barrier layer on the one or more pinned layers;', 'one or more free layers on the barrier layer;', 'one or more hardmask layers on the one or more free layers; and', 'a second electrode on the one or more hardmask layers;, 'forming the MTJ device on a substrate, wherein the MTJ device comprisesforming a shielding layer on at least one of a side surface of the second electrode and a bottom surface of the second electrode, such that the shielding layer shields the one or more free layers; andforming a metal line connection on the shielding layer.2. The method of claim 1 , wherein the shielding layer is formed of a high magnetic permeability material.3. The method of claim 1 , wherein the metal line connection is through a via coupled to the shielding layer.4. The method of claim 1 , further comprising integrating the MTJ device into an apparatus claim 1 , selected from the group consisting of a set top box claim 1 , music player claim 1 , video player claim 1 , entertainment unit claim 1 , navigation device claim 1 , communications device claim 1 , personal digital assistant (PDA) claim 1 , fixed location data unit claim 1 , and a computer.5. A non-transitory computer-readable medium claim 1 , comprising instructions stored thereon that claim 1 , if executed by a lithographic device claim 1 , cause the lithographic device to ...

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Номер записи: 51
06-02-2014 дата публикации

MAGNETIC TUNNEL JUNCTION DEVICE

Номер: US20140035075A1
Автор: Kang Seung Hyuk, Lee Kangho, Li Xia, Zhu Xiaochun
Принадлежит: QUALCOMM INCORPORATED

A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms. 1. A magnetic tunnel junction device , comprising: a Synthetic Anti-Ferromagnetic (SAF) layer;', 'a first free layer;', 'a second free layer, and', 'a spacer layer between the first free layer and the second free layer, wherein the spacer layer is configured to substantially inhibit exchange coupling between the first free layer and the second free layer,', 'wherein the first free layer is magneto-statically coupled to the second free layer, and', 'wherein a thickness of the spacer layer is at least 4 Angstroms., 'a semiconductor device comprising2. The magnetic tunnel junction device of claim 1 , wherein the spacer layer comprises a material that substantially inhibits exchange coupling between the first free layer and the second free layer.3. The magnetic tunnel junction device of claim 1 , wherein the spacer layer has a thickness that substantially inhibits exchange coupling between the first free layer and the second free layer.4. The magnetic tunnel junction device of claim 1 , further comprising a spin torque enhancement layer.5. The magnetic tunnel junction device of claim 4 , further comprising a capping layer claim 4 , adjacent to the spin torque enhancement layer claim 4 , wherein the capping layer forms a spin barrier but is not a pinning layer.6. The magnetic tunnel junction device of claim 4 , further comprising a spin accumulation layer between the spin torque enhancement layer and the second free layer.7. The magnetic tunnel junction device of claim 1 , further comprising:an Anti-Ferromagnetic (AFM) pinning layer configured to pin a direction of a magnetic field in the SAF layer.8. ...

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Номер записи: 52
06-02-2014 дата публикации

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

Номер: US20140035662A1
Автор: KANG Hyuk-Choong
Принадлежит: SK HYNIX INC.

A semiconductor device includes a power supply voltage level/slope detection unit configured to detect a level of a power supply voltage and a slope of a power supply voltage curve, and output a power supply voltage level/slope detection signal, a pumping voltage detection unit configured to detect a level of a pumping voltage based on a reference pumping level to output a pumping detection signal, an oscillation signal generation unit configured to generate an oscillation signal in response to the pumping detection signal and the power supply voltage level/slope detection signal, and a pumping unit configured to generate the pumping voltage by performing a charge pumping operation in response to the oscillation signal. 1. A semiconductor device comprising:a power supply voltage level/slope detection unit configured to detect a level of a power supply voltage and a slope of a power supply voltage curve, and output a power supply voltage level/slope detection signal;a pumping voltage detection unit configured to detect a level of a pumping voltage based on a reference pumping level to output a pumping detection signal;an oscillation signal generation unit configured to generate an oscillation signal in response to the pumping detection signal and the power supply voltage level/slope detection signal; anda pumping unit configured to generate the pumping voltage by performing a charge pumping operation in response to the oscillation signal.2. The semiconductor device of claim 1 , wherein the oscillation signal oscillates at a first frequency during an activation period of the pumping detection signal and the power supply voltage level/slope detection signal while oscillating at a second frequency having a frequency lower than the first frequency during any deactivation period of the pumping detection signal and the power supply voltage level/slope detection signal.3. The semiconductor device of claim 1 , wherein the power supply voltage level/slope detection unit ...

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Номер записи: 53
06-02-2014 дата публикации

Fabrication of a magnetic tunnel junction device

Номер: US20140038312A1
Автор: Kangho Lee, Seung Hyuk KANG, Xia Li, Xiaochun Zhu
Принадлежит: Qualcomm Inc

A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer. The instructions, when executed by the processor, cause the processor to initiate oxidization of a first layer of the capping material to form a first oxidized layer of oxidized material.

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Номер записи: 54
13-02-2014 дата публикации

CONFIGURABLE MEMORY ARRAY

Номер: US20140043924A1
Автор: Kang Seung Hyuk, Kim Jung Pill, Li Xia, Rao Hari M., Zhu Xiaochun
Принадлежит: QUALCOMM INCORPORATED

Embodiments disclosed include a memory array having a plurality of bit lines and a plurality of source lines disposed in columns. A plurality of word lines is disposed in rows. A plurality of storage elements have a first subset of storage elements electrically decoupled from the memory array and a second subset of storage elements coupled to the memory array. The memory array further includes a plurality of bit cells, each including one storage element from the second subset of storage elements coupled to at least two transistors. The bit cells are coupled to the plurality of bit lines and the plurality source lines. Each transistor is coupled to one word line. The memory array can further include logic to select a high performance mode and a high density mode. 1. A method of testing a memory array comprising:selecting a high performance mode;activating a first word line and a second word line from a single word line control signal, wherein the first word line is coupled to a first transistor and the second word line is coupled to a second transistor, each transistor being coupled to a storage element; andselecting a bit line and a source line coupled to a bit cell, the bit cell including the storage element and the first transistor and the second transistor.2. The method of claim 1 , wherein selecting the high performance mode comprises:selecting a first input of a multiplexer, wherein the first input is coupled to the single word line control signal and an output of the multiplexer is coupled to the first word line.3. The method of claim 2 , further comprising:buffering the single word line control signal via a buffer coupled to the second word line to balance a delay of the multiplexer.4. The method of claim 1 , further comprising:selecting a high density mode;decoupling the first word line from the single word line control signal;activating the second word line using the single word line control signal; andselecting the bit line and the source line coupled to ...

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Номер записи: 55
06-03-2014 дата публикации

ASYMMETRIC WRITE SCHEME FOR MAGNETIC BIT CELL ELEMENTS

Номер: US20140063933A1
Автор: Kang Seung Hyuk, Kim Jung Pill, Rao Hari M., Zhu Xiaochun
Принадлежит: QUALCOMM INCORPORATED

A first write driver applies a first voltage above a fixed potential to a first terminal. A second write driver applies a second voltage that is higher above the fixed potential than the first voltage to a second terminal. There is at least one magnetic tunnel junction (MTJ) structure coupled at the first terminal at a first side to the first write driver and coupled at the second terminal at a second side to the second write driver. The first side of the MTJ structure receives the first voltage and the second side of the MTJ structure receives a ground voltage to change from a first state to a second state. The second side of the MTJ structure receives the second voltage and the first side of the MTJ structure receives the ground voltage to change from the second state to the first state. 1. A magnetic bit cell write circuit comprising:at least one magnetic tunnel junction (MTJ) structure comprising a first terminal and a second terminal,the first terminal configured to receive a first voltage that is above a fixed potential and based at least in part on a core network voltage, and the second terminal configured to receive a ground voltage in order to change from a first state to a second state, andthe second terminal configured to receive a second voltage that is higher than the first voltage and based at least in part on an input/output (I/O) network voltage, and the first terminal configured to receive the ground voltage in order to change from the second state to the first state.2. The magnetic bit cell write circuit of further comprising:a first write driver configured to apply the first voltage; anda second write driver configured to apply the second voltage.3. The magnetic bit cell write circuit of further comprising:a plurality of columns, the at least one MTJ structure residing in one of the plurality of columns;at least one additional mu structure in each additional one of the plurality of columns;at least one additional low voltage write driver coupled ...

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Номер записи: 56
06-03-2014 дата публикации

MULTI-LAYER COATING AND METHOD FOR FORMING THE SAME

Номер: US20140065394A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong
Принадлежит: HYUNDAI MOTOR COMPANY

Disclosed is a multi-layer coating formed by repeatedly and sequentially laminating first coating layers composed of TiN and second coating layers composed of TiAgN on a surface, and a method of forming the same. 1. A multi-layer coating comprising a plurality of alternating first coating layers composed of TiN and second coating layers composed of TiAgN.2. The multi-layer coating according to claim 1 , wherein each of the first coating layers and the second coating layers have an individual thickness of about 20˜300 nm.3. The multi-layer coating according to claim 1 , comprising a total of about 10˜30 first coating layers and second coating layers.4. The multi-coating layer according to claim 1 , comprising about 7˜20 at % Ag based on the entire atoms making up the second coating layer.5. A method of forming a multi-layer coating using a physical vapor deposition (PVD) device claim 1 , a Ti target claim 1 , an Ag target and Ngas claim 1 , the method comprising:{'sub': '2', 'a first coating step of coating a first coating layer of TiN on a base material surface by injecting Ngas as atmosphere gas and applying current to a Ti target;'}{'sub': '2', 'a second step of coating a second coating layer of TiAgN on the first coating layer by injecting Ngas as atmosphere gas and applying current to both of the Ti target and a Ag target; and'}a laminating step of repeatedly and sequentially laminating a plurality of first coating layers and second coating layer by repeatedly turning the current applied to the Ag target OFF and ON.6. The multi-layer coating method according to claim 5 , wherein the atmosphere gas is Ngas or Ar gas.7. The multi-layer coating method according to claim 5 , wherein the Ti target is installed at a sputter source unit and the Ag target is installed at an arc source unit to apply current.8. The multi-layer coating method according to claim 7 , wherein a current of about 1˜2.5 A is applied to the sputter source unit.9. The multi-layer coating method ...

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Номер записи: 57
06-03-2014 дата публикации

Method for connectivity information control and an electronic device thereof

Номер: US20140065969A1
Автор: Hyeong-Seok Kim, Hyuk Kang, Hyun-Chul Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and apparatus for controlling connectivity information in an electronic device. The method includes receiving connectivity information on at least one wireless device, analyzing the received connectivity information, and establishing a connection with a neighbor wireless device by using the connectivity information. A first electronic device may store connectivity information with respect to the plurality of wireless devices. A second electronic device can receive a connectivity information file transmitted from the first electronic device. In the case where a second electronic device attempts to initially establish a connection with the plurality of neighbor wireless devices, the second electronic device can easily establish a connection with the plurality of wireless devices by decoding a connectivity information file transmitted from the first electronic device.

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Номер записи: 58
13-03-2014 дата публикации

MAGNETIC TUNNEL JUNCTION (MTJ) ON PLANARIZED ELECTRODE

Номер: US20140073064A1
Автор: Chen Wei-Chuan, Hsu Wah Nam, Kang Seung Hyuk, Lee Kangho, Li Xia, Zhu Xiaochun
Принадлежит: QUALCOMM INCORPORATED

A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ. 1. A method for manufacturing a magnetic tunnel junction (MTJ) device , comprising;depositing a second insulating layer on a bottom metal and on a first insulating layer;patterning the second insulating layer to expose the bottom metal;depositing a bottom electrode material on the bottom metal and on the second insulating layer after patterning the second insulating layer;planarizing, the bottom electrode material to form a bottom electrode having a top surface coplanar with a top surface of the second insulating layer;depositing a material stack over the bottom electrode;patterning the material stack on the bottom electrode, the material stack being smaller than the bottom electrode;depositing a third insulating layer on the bottom electrode and on the second insulating layer, the third insulating layer contacting the bottom electrode and the second insulating layer, the third insulating layer surrounding and abutting the material stack;depositing a top electrode material on the material stack and on the third insulating layer;patterning the top electrode material to form a top electrode, the top electrode abutting the material stack and abutting the third insulating layer; anddepositing a fourth insulating layer on the second insulating layer, the fourth insulating layer surrounding and contacting the ...

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Номер записи: 59
20-03-2014 дата публикации

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20140080273A1
Автор: Kang Jong-Hyuk, Lee Jong-Wook, Son Yong-Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. 1. A method of manufacturing a vertical-type non-volatile memory device , comprising:alternatively stacking two different layers on a substrate to form a multi-layered structure,forming a trench penetrating the different layers vertically with respect to the substrate;forming a tunnel oxide layer, a charge-trapping layer and a blocking dielectric layer in the trench;forming a semiconductor layer in the trench;forming a layer including metal on the semiconductor layer;thermally treating the layer including metal and the semiconductor layer; andremoving the layer including metal.2. The method of claim 1 , wherein forming the multi-layered structure comprises:partially etching the stacked layers of sacrificial layers and insulation interlayers to form an opening that has a linear shape extending in a first direction and exposes a surface of the substrate;forming an insulation layer pattern in the opening, the insulation layer pattern being spaced apart from a sidewall of the opening;forming a semiconductor pattern on both sidewalls of the opening to fill the opening, the semiconductor pattern having a pillar shape;3. The method of claim 2 , wherein forming the trench penetrating the different layers comprises:removing a portion of the multi-layered structure between the semiconductor patterns to form a first opening that extends in a first direction; andremoving the sacrificial layer exposed through the first ...

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Номер записи: 60
10-04-2014 дата публикации

METHOD AND APPARATUS OF PROBABILISTIC PROGRAMMING MULTI-LEVEL MEMORY IN CLUSTER STATES OF BI-STABLE ELEMENTS

Номер: US20140098602A1
Автор: Gilmore Robert P., Kang Seung Hyuk, Levin Jeffrey Alexander, Nowak Matthew Michael, WU Wenqing, Yu Nicholas Ka Ming, Yuen Kendrick Hoy Leong, Zhu Xiaochun
Принадлежит:

A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data. 1. A method of programming a resistance through a cluster of bi-stable switching elements , comprising:detecting a state of the resistance through the cluster of bi-stable switching elements;determining at least one programming current attribute based on the detected state;applying the programming current with said at least one determined programming current attribute; anditerating the above steps, until a given programming completion state is reached.2. The method of claim 1 , further comprising counting a number of iterations of iterating the above steps claim 1 , and wherein one programming completion state is a timeout equal to a given number of the iterations.3. The method of claim 1 , wherein one programming completion state is said detecting a state of the resistance meeting a given resistance value.4. The method of claim 1 , wherein the at least one programming current attribute includes a current direction.5. The method of claim 1 , wherein the at least one programming current attribute includes a current magnitude.6. The method of claim 1 , wherein the at least one programming current attribute includes an analog waveform attribute.7. The method of claim 1 , further comprising counting a number of iterations of iterating the above steps claim 1 , and wherein one programming completion state is the number of iterations reaching a given ...

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Номер записи: 61
06-01-2022 дата публикации

LIGHT-EMITTING DEVICE AND DISPLAY DEVICE HAVING SAME

Номер: US20220005978A1
Автор: CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk
Принадлежит:

A light emitting device may include: an emission area; an insulating pattern in the emission area, the insulating pattern including at least one recess and a protrusion around the recess; a first electrode on the insulating pattern and overlapping a first area of the recess and the protrusion in a periphery of the first area; a second electrode on the insulating pattern and spaced from the first electrode in a first direction, the second electrode overlapping a second area of the recess and the protrusion in a periphery of the second area; and a light emitting diode in the recess and electrically connected between the first electrode and the second electrode. 1. A light emitting device comprising:an emission area;an insulating pattern in the emission area, the insulating pattern comprising at least one recess and a protrusion around the recess;a first electrode on the insulating pattern and overlapping a first area of the recess and the protrusion in a periphery of the first area;a second electrode on the insulating pattern and spaced from the first electrode in a first direction, the second electrode overlapping a second area of the recess and the protrusion in a periphery of the second area; anda light emitting diode in the recess and electrically connected between the first electrode and the second electrode.2. The light emitting device according to claim 1 , wherein the recess comprises claim 1 , in a perimeter area thereof adjacent to the protrusion claim 1 , an inclined surface having an inclination within an angular range.3. The light emitting device according to claim 2 , wherein each of the first electrode and the second electrode comprises a bent portion having a bent shape on each of an upper end and a lower end of the inclined surface.4. The light emitting device according to claim 1 , wherein the recess has a circular shape claim 1 , an elliptical shape claim 1 , a polygonal shape claim 1 , or a combination thereof claim 1 , in a plan view.5. The light ...

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Номер записи: 62
07-01-2016 дата публикации

Synthetic antiferromagnet (saf) coupled free layer for perpendicular magnetic tunnel junction (p-mtj)

Номер: US20160005955A1
Автор: Chando Park, Kangho Lee, Matthias Georg GOTTWALD, Seung Hyuk KANG
Принадлежит: Qualcomm Inc

A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

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Номер записи: 63
03-01-2019 дата публикации

VOLTAGE-SWITCHED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) EMPLOYING SEPARATE READ OPERATION CIRCUIT PATHS FROM A SHARED SPIN TORQUE WRITE OPERATION CIRCUIT PATH

Номер: US20190006415A1
Автор: Kan Jimmy Jianan, Kang Seung Hyuk, Li Xia, Tao Gengming, YANG Bin
Принадлежит:

Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path is disclosed. The MRAM includes an MRAM array that includes MRAM bit cell rows each including a plurality of MRAM bit cells. MRAM bit cells on an MRAM bit cell row share a common electrode to provide a shared write operation circuit path for write operations. Dedicated read operation circuit paths are also provided for each MRAM bit cell separate from the write operation circuit path. As a result, the read operation circuit paths for the MRAM bit cells do not vary as a result of the different layout locations of the MRAM bit cells with respect to the common electrode. Thus, the read parasitic resistances of the MRAM bit cells do not vary from each other because of their different coupling locations to the common electrode. 1. A magneto-resistive random access memory (MRAM) bit cell circuit , comprising: a first electrode and a second electrode;', a tunnel barrier between the first electrode and the second electrode;', 'a pinned layer between the tunnel barrier and the second electrode; and', 'a free layer between the tunnel barrier and the first electrode; and, 'a magnetic tunnel junction (MTJ) device, comprising, 'an access transistor coupled to one of the first electrode or the second electrode;, 'a plurality of MRAM bit cells each comprisinga common electrode comprising either the first electrodes or the second electrodes of the plurality of MRAM bit cells, the common electrode comprising a first end portion and a second end portion;a first write operation transistor coupled to the first end portion of the common electrode such that a write current flowing through the first write operation transistor flows through each of the first electrodes or the second electrodes of the common electrode;a second write operation transistor coupled to the second end portion of the common electrode such that a write ...

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Номер записи: 64
03-01-2019 дата публикации

ELECTRONIC DEVICE AND METHOD FOR COMMUNICATING WITH EXTERNAL ELECTRONIC DEVICE

Номер: US20190006891A1
Автор: CHOI Bo-Kun, KANG Doo-Suk, Kang Hyuk, KANG Min-Ho, Park Chun-Ho
Принадлежит:

An electronic device according to various embodiments may include: a wireless communication circuit configured to support short-range communication; a wireless charging circuit configured to support wireless charging; at least one processor electrically connected to the wireless communication circuit and the wireless charging circuit; and a memory electronically connected to the at least one processor. The memory is configured to store instructions that when executed by the at least one processor cause the electronic device to perform operations comprising: identifying an area in which the electronic device is located, based on at least one of a second signal for communicating with an external electronic device via the wireless communication circuit when the external electronic device is located in a second area, a first signal for communicating with the external electronic device via the wireless charging circuit when the external electronic device is located in a first area within the second area, and a combination of at least a part of the first signal and the second signal; identifying an operation mode corresponding to the area; and controlling operation of the electronic device, based on the identified operation mode. 1. An electronic device , comprising:a wireless communication circuit configured to support short-range communication;a wireless charging circuit configured to support wireless charging;at least one processor electrically connected to the wireless communication circuit and the wireless charging circuit; anda memory electronically connected to the at least one processor,wherein the memory is configured to store instructions that, when executed by the at least one processor, cause the electronic device to perform operations comprising:identifying an area in which the electronic device is located, based on at least one of a second signal for communicating with an external electronic device via the wireless communication circuit when the external ...

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Номер записи: 65
08-01-2015 дата публикации

DISPLAY DEVICE

Номер: US20150009440A1
Автор: CHO Hyun Min, HONG Sung-jin, Kang Jong Hyuk, LEE Baek Hee, PARK JAE BYUNG
Принадлежит:

A display device includes a light source generating light and a thin film transistor array panel including a pixel electrode and a common electrode. The display includes an upper panel and a quantum rod layer positioned between the thin film transistor array panel and the upper panel. The display includes an upper polarizer attached outside of the upper panel, in which the quantum rod layer includes quantum rods, and an arrangement direction of the quantum rods is controlled by an electric field generated by the pixel electrode and the common electrode, light is polarized according to the controlled arrangement direction, and the polarizer controls the transmission degree of the polarized light from the quantum rods according to the arrangement direction of the quantum rods. 1. A display device , comprising:a light source;a thin film transistor array panel comprising a pixel electrode and a common electrode;an upper panel;a quantum rod layer positioned between the thin film transistor array panel and the upper panel; anda polarizer attached outside of the upper panel, wherein the quantum rod layer comprises quantum rods, and an arrangement direction of the quantum rods is controlled by an electric field generated by the pixel electrode and the common electrode,wherein light is polarized according to the controlled arrangement direction, andwherein the polarizer is configured to control the transmission degree of the polarized light from the quantum rods according to the arrangement direction of the quantum rods.2. The display device of claim 1 , wherein the quantum rod layer comprises a first quantum rod claim 1 , a second quantum rod claim 1 , and a third quantum rod.3. The display device of claim 2 , wherein the first quantum rod is configured to polarize red light claim 2 , the second quantum rod is configured to polarize green light claim 2 , and the third quantum rod is configured to polarize blue light.4. The display device of claim 3 , wherein thicknesses of ...

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Номер записи: 66
12-01-2017 дата публикации

METHOD FOR OPERATING ELECTRONIC APPARATUS AND ELECTRONIC APPARATUS SUPPORTING THE METHOD

Номер: US20170010669A1
Автор: Choi Jong Ho, HONG Duk Ki, JEON Seung Young, Kang Hyuk, LIM Kyung Soo, YOO Jae Bong
Принадлежит:

An electronic device operation method and an electronic device for supporting the same are provided. The electronic device operation method includes collecting a signal and determining a state where the electronic device is worn, based on at least one of physiological signal based on at least part of the collected signal, proximity information based on at least part of the collected signal, or illumination information based on at least part of the collected signal. 1. An electronic device comprising:a sensor module configured to collect a signal; andat least one of a module configured to generate physiological signal based on at least part of the collected signal, a module configured to generate proximity information based on at least part of the collected signal, or a module configured to generate illumination information based on at least part of the collected signal; anda processor configured to determine a state where the electronic device is worn, based on at least one of the physiological signal, the proximity information, or the illumination information,wherein the processor outputs information of the electronic device in a different form in response to the state where the electronic device is worn.2. The electronic device of claim 1 , wherein the processor is configured to detect changed physiological information of at least one of an amount of blood flow claim 1 , blood pressure claim 1 , blood oxygen saturation claim 1 , or a heart rate claim 1 , changed in response to a physical change of a portion where the electronic device is worn claim 1 , determines the state where the electronic device is worn claim 1 , based on the physiological information and the physical change claim 1 , and execute an operation of the electronic device based on the state where the electronic device is worn.3. The electronic device of claim 1 , wherein the processor is configured to determine a portion where the electronic device is worn claim 1 , based on at least one of a ...

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Номер записи: 67
12-01-2017 дата публикации

ELECTRONIC DEVICE

Номер: US20170011210A1
Автор: Baek Moo-Hyun, CHEONG Cheol-Ho, CHOI Jong-ho, HONG Duk-ki, JEON Seung-Young, JIN In-Ji, JUNG Eui-Chang, Kang Hyuk, Kim Dong-hyun, Kim Hyun-Soo, KIM Yang-Su, LIM Kyung-soo, NA Bo-Yeon, PARK Jeong-Min, PARK Ji-hyun, Park Tae-Gun, ROH Byoung-Tack, SEOK Sang-Youp, SHIN Hyun-seok, Shin Sung-Hyuk, SON Dong-Il, SON Kwang-Sub, Son Sung-Ho, YANG Jin-Gil, YEO Jae-Yung, YOO Jae-bong, YOON Byoung-Uk, YOON Su-Ha
Принадлежит:

A method for providing a service by an electronic device according to various embodiments may comprise the steps of: obtaining biometric information of a user; determining at least one service associated with the biometric information out of a plurality of services that the electronic device supports; and providing the determined at least one service. 1. An electronic device , comprising:at least one sensor; and ["obtain a user's bio information using the at least one sensor or a transceiver of the electronic device,", 'determine at least one service associated with the bio information among a plurality of services supported by the electronic device, and', 'provide the determined at least one service., 'at least one processor configured to2. The electronic device of claim 1 , wherein the user's bio information includes at least one of the user's identification information claim 1 , body information claim 1 , emotion information claim 1 , health information claim 1 , disease information claim 1 , exercise information claim 1 , stress information claim 1 , or sleep information.3. The electronic device of claim 1 , wherein the at least one processor is further configured to:detect a variation in a state of the electronic device meeting a preset condition, andobtain the bio information according to the detection of the variation in the state of the electronic device.4. The electronic device of claim 1 , wherein the at least one processor is further configured to:determine whether a preset condition is met and obtain the bio information as the preset condition is met,wherein the preset condition includes at least one of a movement of the electronic device exceeding a threshold, a movement of the electronic device according to a preset gesture, a location movement of the electronic device to a preset area, a user input to the electronic device, occurrence of a preset in the electronic device, or a switch between a sleep state of the electronic device and a wakeup state.5. ...

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Номер записи: 68
12-01-2017 дата публикации

IMAGE COMPENSATING DEVICE AND DISPLAY DEVICE HAVING THE SAME

Номер: US20170011712A1
Автор: CHO Hyun-Min, HONG Sung-jin, Im Hyun-Deok, KANG Jae-Woong, Kang Jong-Hyuk, Park Jae-Byung
Принадлежит:

An image compensating device includes a transmission ratio calculator configured to output a red transmission ratio of a user's crystalline lens, a green transmission ratio of the crystalline lens, and a blue transmission ratio of the crystalline lens based on the user's age, and a compensator configured to receive red input data, green input data, and blue input data and compensate the red input data, the green input data, and the blue input data based on the red transmission ratio, the green transmission ratio, and the blue transmission ratio. 1. An image compensating device comprising:a transmission ratio calculator configured to output a red transmission ratio of a user's crystalline lens, a green transmission ratio of the crystalline lens, and a blue transmission ratio of the crystalline lens based on the user's age; anda compensator configured to receive red input data, green input data, and blue input data and to compensate the red input data, the green input data, and the blue input data based on the red transmission ratio, the green transmission ratio, and the blue transmission ratio.2. The image compensating device of claim 1 , wherein the compensator includes:a first compensator configured to compensate ratios of the red input data, the green input data, and the blue input data based on the blue transmission ratio and to output a first red compensated data, a first green compensated data, and a first blue compensated data; anda second compensator configured to compensate the first red compensated data, the first green compensated data, and the first blue compensated data based on the blue transmission ratio and to output a second red compensated data, a second green compensated data, and a second blue compensated data.8. The image compensating device of claim 1 , wherein the transmission ratio calculator includes a lookup table (LUT) that stores the red transmission ratio claim 1 , the green transmission ratio claim 1 , and the blue transmission ratio ...

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Номер записи: 69
12-01-2017 дата публикации

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20170012054A1
Автор: Kang Jong-Hyuk, Lee Jong-Wook, Son Yong-Hoon
Принадлежит:

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. 1. A vertical-type non-volatile memory device , comprising:a substrate;insulation interlayer patterns and control gate patterns alternately and repeatedly stacked on the substrate to form a multi-layered structure;semiconductor patterns on the substrate and extending through the insulation interlayer pattern and the control gate patterns in a vertical direction relative to the substrate;a tunnel oxide layer contacting at least a portion of a sidewall of the semiconductor patterns;a charge-trapping layer on the tunnel oxide layer;a blocking dielectric layer on the charge-trapping layer and conformally formed along inner sidewalls, upper surfaces and lower surfaces of the control gate patterns, the blocking dielectric layer extending in an extending direction of the control gate patterns anda metal silicide pattern on each of the control gate patterns or on each of the semiconductor patterns.2. The vertical-type non-volatile memory device of claim 1 , wherein the semiconductor patterns have a pillar shape that extends in the vertical direction.3. The vertical-type non-volatile memory device of claim 1 , further comprising an insulation layer pattern provided on the substrate claim 1 , the semiconductor patterns making contact with a first sidewall and a second sidewall opposite to the first sidewall of the insulation layer pattern.4. The vertical-type non-volatile memory device of claim 1 , wherein a ...

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Номер записи: 70
14-01-2021 дата публикации

MULTI-DISPLAY BASED DEVICE

Номер: US20210011678A1
Автор: HONG Duk Ki, Kang Hyuk, KIM Jeong Hun, KIM Min Gyew, LIM Jun Hak, LIM Kyung Soo, SEO Na Jung, YOO Jae Bong
Принадлежит:

An electronic device is provided that includes a first display and a second display. The electronic device also includes a processor configured to allocate a first set of resources to the first display and a second set of resources to the second display. The first set of resources is different from the second set of resources. Each of the first set of resources and the second set of resources includes one or more of at least one available hardware resource and at least one available software resource. 1. An electronic device , comprising:a first display;a second display; anda processor configured to allocate a first set of resources to the first display and a second set of resources to the second display, the first set of resources being different from the second set of resources, and each of the first set of resources and the second set of resources comprising one or more of at least one available hardware resource and at least one available software resource.2. The electronic device of claim 1 , wherein a first hardware component accessible with respect to the first display is different from a second hardware component accessible with respect to the second display.3. The electronic device of claim 2 , wherein the first hardware component and the second hardware component are selected from a plurality of hardware components comprising a camera claim 2 , a speaker claim 2 , a microphone claim 2 , a receiver claim 2 , a sensor claim 2 , and a communication module.4. The electronic device of claim 3 , wherein the processor comprises:a resource manager configured to receive an access request for at least one of the plurality of hardware components from an application executed on the first display or the second display; anda task manager configured to assign an access right for the at least one of the plurality of hardware components to the application.5. The electronic device of claim 4 , wherein:the resource manager transfers the access request to the task manager, ...

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Номер записи: 71
14-01-2016 дата публикации

Non-volatile multiple time programmable memory device

Номер: US20160012896A1
Автор: Jeffrey Junhao XU, Matthew Michael Nowak, Seung Hyuk KANG, Xia Li, XIAO Lu, Xiaonan Chen, Yu Lu, Zhongze Wang
Принадлежит: Qualcomm Inc

An apparatus includes a multiple time programmable (MTP) memory device. The MTP memory device includes a metal gate, a substrate material, and an oxide structure between the metal gate and the substrate material. The oxide structure includes a hafnium oxide layer and a silicon dioxide layer. The hafnium oxide layer is in contact with the metal gate and in contact with the silicon dioxide layer. The silicon dioxide layer is in contact with the substrate material. The MTP device includes a transistor, and a non-volatile state of the MTP memory device is based on a threshold voltage of the transistor.

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Номер записи: 72
14-01-2016 дата публикации

E-FUSE ARRAY CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME

Номер: US20160012908A1
Автор: KANG Hyuk Choong
Принадлежит:

An E-fuse array circuit includes a driving block arranged in a predetermined portion of a semiconductor substrate, a normal fuse array configured to one side of the driving block, and an auxiliary circuit part arranged in an other side of the driving block to a direction facing an arrangement direction of the normal fuse array. 1. An electric fuse (E-fuse) array circuit comprising:a driving block arranged in a predetermined region of a semiconductor substrate;a normal fuse array configured to one side of the driving block;an auxiliary circuit part arranged in an other side of the driving block to a direction facing an arrangement direction of the normal fuse array.2. The E-fuse array circuit of claim 1 , wherein the auxiliary circuit part is arranged closed to or spaced from the driving block in the other side of the driving block.3. The E-fuse array circuit of claim 1 , wherein the auxiliary circuit part includes an error check and correction (ECC) circuit unit and a redundancy fuse array.4. The E-fuse array circuit of claim 3 , wherein at least one of the ECC circuit unit and the redundancy fuse array is arranged closed to or space from the driving block in the other side of the driving block.5. The E-fuse array circuit of claim 3 , wherein the ECC circuit unit includes a first ECC unit and a second ECC unit claim 3 ,wherein the first ECC unit is arranged closer to the normal fuse array than the second ECC unit.6. The E-fuse array circuit of claim 1 , wherein the driving block includes a controller claim 1 ,wherein the auxiliary circuit part is configured to be enabled or disabled by the controller.7. A semiconductor memory apparatus comprising:a plurality of banks arranged in a cell region of a semiconductor substrate in which the cell region and a peripheral region are defined; andan electric fuse (E-fuse) array circuit arranged in the peripheral region, and including a driving block arranged in a predetermined region of the semiconductor substrate, a normal ...

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Номер записи: 73
12-01-2017 дата публикации

METHOD FOR CONTROLLING APPARATUS ACCORDING TO REQUEST INFORMATION, AND APPARATUS SUPPORTING THE METHOD

Номер: US20170013562A1
Автор: Choi Jong Ho, HONG Duk Ki, JEON Seung Young, Kang Hyuk, Kim Dong Hyun, LIM Kyung Soo, PARK Jeong Min, PARK Tae Gun, YOO Jae Bong
Принадлежит:

A device operation method and an electronic device for supporting the same are provided. The method includes establishing a communication channel with an external device, receiving request information for requesting to activate a sensor of an electronic device in connection with executing a function of the external device, and activating the sensor in response to the request information. 1. An electronic device , comprising:a communication interface configured to establish a communication channel with an external device; anda processor configured to activate a sensor of the electronic device in response to request information if the request information for requesting to activate the sensor in connection to executing the external device is received through the communication interface.2. The electronic device of claim 1 , wherein the processor is configured to send at least part of a sensor signal collected by the activated sensor and at least one of signals processed based on the sensor signal to the external device.3. The electronic device of claim 1 , wherein the processor is configured to deactivate the activated sensor based on at least one of an event associated with ending a function executed in the external device claim 1 , an event associated with a communication disconnection with the external device claim 1 , or an event associated with a change of the remaining capacity of a battery of the external device or the electronic device.4. The electronic device of claim 1 , wherein the processor is configured to restore a state of the sensor to a previous state based on at least one of an event associated with ending a function executed in the external device claim 1 , an event associated with a communication disconnection with the external device claim 1 , or an event associated with a change of the remaining capacity of a battery of the external device or the electronic device.5. The electronic device of claim 1 , wherein the processor is configured to generate ...

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Номер записи: 74
19-01-2017 дата публикации

DISPLAY DEVICE

Номер: US20170017115A1
Автор: CHO Hyun Min, HONG SUNG JIN, IM Hyun Deok, KANG Jae Woong, Kang Jong Hyuk, KIM Dae Hyun, LEE Joo Yeol, PARK JAE BYUNG
Принадлежит:

A display device comprises a first light-transmissive substrate, a second light-transmissive substrate and a solar cell disposed between the first and second light-transmissive substrates. The solar cell includes a conductive wire grid pattern layer, which is disposed between the first and second light-transmissive substrates, a transparent electrode, which is disposed between the second light-transmissive substrate and the conductive wire grid pattern layer, and at least one photoactive layer, which is disposed between the transparent electrode and the conductive wire grid pattern layer. The second light-transmissive substrate is configured to output an image therethrough. 2. The display device of claim 1 , wherein the conductive wire grid pattern layer includes first partition walls claim 1 , which are spaced from one another claim 1 , is configured to transmit a first polarized light therethrough while reflecting a second polarized light claim 1 , which is perpendicular to the first polarized light claim 1 , and is electrically connected to the transparent electrode.3. The display device of claim 1 , wherein the photoactive layer is formed of a light-transmissive material and is a slit pattern-less layer.4. The display device of claim 2 , wherein the photoactive layer includes second partition walls claim 2 , which are spaced from one another claim 2 , and is disposed on the conductive wire grid pattern layer.5. The display device of claim 1 , wherein the photoactive layer transmits visible light therethrough and absorbs ultraviolet (UV) light and infrared (IR) light.6. The display device of claim 1 , wherein the solar cell includes two or more photoactive layers and one or more recombination layers claim 1 , which are disposed between the two or more photoactive layers.7. The display device of claim 2 , wherein the solar cell is a tandem polymer solar cell including two or more photoactive layers and one or more recombination layers claim 2 , which are disposed ...

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Номер записи: 75
21-01-2016 дата публикации

SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL

Номер: US20160020250A1
Автор: Chen Wei-Chuan, Kang Seung Hyuk, Lee Kangho, Li Xia, Lu Yu
Принадлежит:

An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.

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Номер записи: 76
03-02-2022 дата публикации

APPARATUS FOR SEPARATING SEMICONDUCTOR ELEMENTS AND METHOD FOR FABRICATING LIGHT-EMITTING ELEMENTS USING THE SAME

Номер: US20220037292A1
Автор: CHO Hyun Min, CHOI Jeong In, Hong Hye Jung, JO Sung Chan, JUNG Jae Hoon, Kang Jong Hyuk, Kim Dong Gyun, KIM In Hyuk, KWAG Jin Oh, Lee Dong Eon, YOO Hee Yeon
Принадлежит: Samsung Display Co., Ltd.

An apparatus includes a base including a receiving portion that receives a substrate on which semiconductor elements are disposed; and at least one ultrasonic generator that generates and applies ultrasonic waves to the substrate placed in the base. 1. An apparatus comprising:a base comprising a receiving portion that receives a substrate on which semiconductor elements are disposed; andat least one ultrasonic generator that generates and applies ultrasonic waves to the substrate placed in the base.2. The apparatus of claim 1 , whereinthe at least one ultrasonic generator comprises a first ultrasonic generator disposed at a bottom of the base, andthe first ultrasonic generator generates ultrasonic waves in a direction perpendicular to a lower surface of the receiving portion of the base.3. The apparatus of claim 2 , whereinthe base comprises sidewalls surrounding the receiving portion, second ultrasonic generators disposed on sidewalls of the base in a first direction; and', 'third ultrasonic generators disposed on sidewalls of the base in a second direction in a plan view, and, 'the at least one ultrasonic generator further comprisesthe second ultrasonic generators and the third ultrasonic generators generate ultrasonic waves in a direction horizontal to the lower surface of the base.4. The apparatus of claim 3 , wherein a portion on which the first ultrasonic generator is disposed; and', 'an inclined portion connecting the portion on which the first ultrasonic generator is disposed with a sidewall, and, 'the bottom of the base comprisesthe at least one ultrasonic generator further comprises a fourth ultrasonic generator disposed on the inclined portion of the base.5. The apparatus of claim 2 , wherein the at least one ultrasonic generator further comprises fifth ultrasonic generators disposed in the receiving portion of the base.6. The apparatus of claim 1 , whereinthe at least one ultrasonic generator is a probe ultrasonic generator that selectively generates and ...

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Номер записи: 77
03-02-2022 дата публикации

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20220037299A1
Автор: CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk, Kim Won Kyu, KWAG Jin Oh, LEE Won Ho, LEE Yo Han, SONG Keun Kyu
Принадлежит:

A display device and a method of manufacturing the same are provided. The display device comprises a first area which extends in a first direction, a second area which extends in the first direction and is alongside the first area in a second direction intersecting the first direction, at least one first light emitting element in the first area, at least one second light emitting element in the second area, at least one first wiring coupled to an end of the first light emitting element in the first area and that extends in the first direction and at least one second wiring coupled to an end of the second light emitting element in the second area and that extends in the first direction, wherein the first wiring and the second wiring are electrically isolated from each other. 1. A display device comprising:a first area which extends in a first direction;a second area which extends in the first direction and is alongside the first area in a second direction crossing the first direction;at least one first light emitting element in the first area;at least one second light emitting element in the second area;at least one first wiring coupled to an end of the first light emitting element in the first area, the at least one first wiring extending in the first direction; andat least one second wiring coupled to an end of the second light emitting element in the second area, the at least one second wiring extending in the first direction,wherein the first wiring and the second wiring are electrically isolated from each other.2. The display device of claim 1 , further comprising a third wiring having at least a part extending in the second direction from a first side of the first area to a second side of the second area claim 1 ,wherein the third wiring comprises at least one third wiring branch portion having at least some parts extending in the first area and the second area in the first direction and spaced apart from each other and a third wiring stem portion extending in ...

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Номер записи: 78
22-01-2015 дата публикации

COATING LAYER WITH LOW-FRICTION FOR VEHICLE COMPONENT AND METHOD FOR PRODUCING THE SAME

Номер: US20150021165A1
Автор: Choi Kwang Hoon, Hong Woong Pyo, Kang Hyuk, Lyo In Woong
Принадлежит:

The present invention provides a low-friction coating layer for vehicle components comprising: a Ti layer on a surface of a base material; a TiN layer on the Ti layer surface; a TiAgN layer on the TiN layer surface; and an Ag layer transferred on the TiAgN layer surface, and a method for producing the same. 112-. (canceled)5. A method for producing a low-friction coating layer comprising:(a) cleaning a base material surface;(b) preparing the internal atmosphere of a deposition chamber to a vacuum/high temperature atmosphere;(c) depositing the Ti layer on the base material surface by a Ti arc source;(d) depositing the TiN layer on the Ti layer surface by a Ti arc source and nitrogen gas;(e) depositing a TiAgN layer on the TiN layer surface by a Ti arc source, an Ag sputtering source, and nitrogen gas; and(f) depositing an Ag layer on the TiAgN layer surface by an Ag sputtering source.6. The method of further comprising:transferring the Ag layer to the surface of the TiAgN layer by shearing and vertical loads.7. The method of wherein the vacuum/high temperature atmosphere of step (b) comprises a vacuum of about 10-5 to 10-6 ton and a high temperature of about 400 to 500° C.8. The method of wherein the Ti layer is formed to a thickness of 0.08 to 0.15 μm.9. The method of claim 5 , wherein the TiN layer is formed to a thickness of 0.05 to 0.1 μm.10. The method of claim 5 , wherein the TiAgN layer is formed to a thickness of 1.5 to 2 μm.11. The method of claim 5 , wherein the Ag layer is formed to a thickness of 0.1 μm or less.12. The method of wherein the Ag layer is formed to a thickness of 0.1 to 0.0000000001 μm.13. The method of wherein the low-friction coating layer comprises:a Ti layer;a TiN layer;a TiAgN layer, wherein the TiN layer is sandwiched between the Ti layer and the TiAgN layer; andan Ag layer transferred onto the TiAgN layer surface.14. The method of wherein the low-friction coating layer comprises:a Ti layer;a TiN layer;a TiAgN layer, wherein the TiN ...

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Номер записи: 79
18-01-2018 дата публикации

LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

Номер: US20180019377A1
Автор: CHO Chi O, CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk, KIM Dae Hyun, LEE Joo Yeol
Принадлежит:

A light emitting device includes first and second electrodes spaced apart from each other on a substrate, at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, and an insulative support body between the substrate and the bar-type LED. The at least one bar-type LED has a length greater than a width. 1. A light emitting device , comprising:a substrate;first and second electrodes spaced apart from each other on the substrate;at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, the at least one bar-type LED having a length greater than a width; andan insulative support body between the substrate and the bar-type LED.2. The light emitting device as claimed in claim 1 , wherein the bar-type LED has a cylindrical shape or polygonal column shape at a micro scale or nano scale.3. The light emitting device as claimed in claim 1 , wherein the bar-type LED includes a first conductive semiconductor layer doped with a first conductive dopant claim 1 , a second conductive semiconductor layer doped with a second conductive dopant claim 1 , and an active layer between the first and second conductive semiconductor layers.4. The light emitting device as claimed in claim 1 , wherein the insulative support body has a width corresponding to a diameter or width of the bar-type LED.5. The light emitting device as claimed in claim 1 , wherein a shortest length of the insulative support body is substantially equal to a distance between the first and second electrodes.6. The light emitting device as claimed in claim 1 , wherein the first electrode claim 1 , the second electrode claim 1 , and the insulative support body are on a same plane on the substrate and have substantially a same height.7. The light emitting device as claimed in claim 1 , wherein the insulative support body includes at least one of one or more organic layers or one or more inorganic layers.8. The light ...

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Номер записи: 80
18-01-2018 дата публикации

LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

Номер: US20180019426A1
Автор: CHO Chi O, CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk, KIM Dae Hyun, LEE Joo Yeol
Принадлежит:

A light emitting device includes a plurality of unit light emitting regions on a substrate. At least one of the unit light emitting regions includes at least one pair of first and second electrodes that are spaced apart, at least one first bar-type LED in a first layer on the substrate, and at least one second bar-type LED in a second layer on the substrate. At least one of the first bar-type LED or the second bar-type LED is electrically connected between the first electrode and the second electrode. 1. A light emitting device , comprising:a plurality of unit light emitting regions on a substrate,wherein at least one of the unit light emitting regions includes:at least one pair of first and second electrodes that are spaced apart;at least one first bar-type LED in a first layer on the substrate; andat least one second bar-type LED in a second layer on the substrate,wherein at least one of the first bar-type LED or the second bar-type LED is electrically connected between the first electrode and the second electrode.2. The light emitting device as claimed in claim 1 , wherein:the first bar-type LED and the second bar-type LED emit light of different colors, andone of the first and second bar-type LEDs having a longer wavelength than the other bar-type LED is disposed closer to the substrate.3. The light emitting device as claimed in claim 1 , wherein at least one end of at least one of the first bar-type LED or the second bar-type LED is an electrically floated end.4. The light emitting device as claimed in claim 1 , wherein the unit light emitting regions include:a first unit light emitting region in which the first bar-type LED is electrically connected between the first electrode and the second electrode; anda second unit light emitting region in which the second bar-type LED is electrically connected between the first electrode and the second electrode.5. The light emitting device as claimed in claim 1 , wherein at least one of the unit light emitting regions ...

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Номер записи: 81
21-01-2016 дата публикации

APPARATUS AND METHOD FOR RECEIVING CONTENT IN TERMINAL

Номер: US20160021686A1
Автор: Choi Hyun-Chul, Kang Hyuk, Kim Hyeong-Seok
Принадлежит:

An apparatus and a method for receiving content in a terminal, by which the terminal can receive, with low power consumption, content from an adjacent service provider by using a wireless communication technology. A low-power short-range communication unit; and a controller for controlling the low-power short-range communication unit to broadcast an advertising packet including information of the terminal at regular intervals, and control the low-power short-range communication unit so as to connect to a particular service provider which has scanned the advertising packet. A control operation is then performed so as to receive content from the particular service provider.

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Номер записи: 82
18-01-2018 дата публикации

ERROR CORRECTION AND DECODING

Номер: US20180019767A1
Автор: CHOI Sara, JR. Byung Kyu, Jung Seong-Ook, Kang Seung Hyuk, Kim Jisu, Kim Jung Pill, Kim Sungryul, Kim Taehyun, Na Taehui, SONG
Принадлежит:

Error detection and correction decoding apparatus performs single error correction-double error detection (SEC-DED) or double error correction-triple error detection (DEC-TED) depending on whether the data input contains a single-bit error or a multiple-bit error, to reduce power consumption and latency in case of single-bit errors and to provide powerful error correction in case of multiple-bit errors. 1. An error detection and correction apparatus , comprising:a syndrome generator configured to receive input data and to output a syndrome that indicates whether the input data includes an error;a positive edge triggered flip-flop that is configured to receive syndrome input based on the syndrome from the syndrome generator and to provide a syndrome output; andan error location decoder configured to receive the syndrome output from the positive edge triggered flip-flop.2. The error detection and correction apparatus of claim 1 , further comprising:a timing controller configured to receive a clock signal, and to delay the clock signal by a given amount of time by passing the clock signal through a delay line,wherein the positive edge triggered flip-flop is controlled by the delayed clock signal.3. The error detection and correction apparatus of claim 1 , wherein the given amount of time is configured to mimic a delay associated with a critical path of the syndrome generator.4. The error detection and correction apparatus of claim 1 , further comprising:an error detector configured to generate corrected output data,wherein the error location decoder is configured to provide, based on the syndrome output, both a single error location decoder output and a double error location decoder output to the error detector.5. The error detection and correction apparatus of claim 4 , wherein the syndrome input received at the positive edge triggered flip-flop corresponds to the syndrome that is output from the syndrome generator.6. The error detection and correction apparatus of ...

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Номер записи: 83
17-01-2019 дата публикации

MULTIPLE (MULTI-) LEVEL CELL (MLC) NON-VOLATILE (NV) MEMORY (NVM) MATRIX CIRCUITS FOR PERFORMING MATRIX COMPUTATIONS WITH MULTI-BIT INPUT VECTORS

Номер: US20190019564A1
Автор: Chen Wei-Chuan, Kang Seung Hyuk, Li Xia
Принадлежит:

Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors are disclosed. An MLC NVM matrix circuit includes a plurality of NVM storage string circuits that each include a plurality of MLC NVM storage circuits each containing a plurality of NVM bit cell circuits each configured to store 1-bit memory state. Thus, each MLC NVM storage circuit stores a multi-bit memory state according to memory states of its respective NVM bit cell circuits. Each NVM bit cell circuit includes a transistor whose gate node is coupled to a word line among a plurality of word lines configured to receive an input vector. Activation of the gate node of a given NVM bit cell circuit in an MLC NVM storage circuit controls whether its resistance is contributed to total resistance of an MLC NVM storage circuit coupled to a respective source line. 1. A multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuit , comprising:a plurality of word lines configured to receive a multi-bit input vector represented by an input voltage on each word line among the plurality of word lines;a plurality of bit lines, each bit line among the plurality of bit lines configured to receive a corresponding line voltage;a plurality of source lines; and a gate node coupled to a corresponding word line among the plurality of word lines; and', 'each NVM bit cell circuit configured to couple its resistance to a source line among the plurality of source lines coupled to its respective MLC NVM storage circuit in response to the input voltage applied to the corresponding word line coupled to the gate node., 'each NVM bit cell circuit among the plurality of NVM bit cell circuits in a respective MLC NVM storage circuit having a resistance representing a stored memory state, and comprising, 'each MLC NVM storage circuit among the plurality of MLC NVM storage circuits comprising a plurality of NVM bit cell circuits each ...

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Номер записи: 84
22-01-2015 дата публикации

Method and device for communication

Номер: US20150026580A1
Автор: Hyuk Kang, Kyung-Tae Kim, Seong-Min Je
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A system of communicating between first and second electronic devices, comprises, in a first device, receiving from a second device, voice representative information acquired by the second device, and connection information indicating characteristics of communication to be used in establishing a communication link with the second device. The system compares the voice representative information with predetermined reference voice representative information and in response to the comparison, establishes a communication link with the second device by using the connection information received from the second device.

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Номер записи: 85
29-01-2015 дата публикации

WINDOW CLEANING APPARATUS AND METHOD OF CONTROLLING THE SAME

Номер: US20150027494A1
Автор: Kang Sung-Hyuk, Kim Dong-Kyu, Ryu Man-Hyun
Принадлежит: Intellectual Discovery Co., Ltd.

A window cleaning robot according to the present embodiment comprises a first cleaning unit and a second cleaning unit, which are respectively attached to and move on both surfaces of a window by magnetic force. The window cleaning robot further comprises: a first magnetic module included in the first cleaning unit; a second magnetic module included in the second cleaning unit; a magnetic force sensing part for sensing magnetic force between the first magnetic module and the second magnetic module; and a magnetic force controller for controlling the magnetic force between the first magnetic module and the second magnetic module, wherein the first magnetic module comprises a first magnet which is rotationally mounted, and a second magnet and a third magnet disposed on both sides of the first magnet, and the magnetic force controller rotates the first magnet so as to control the magnetic force between the first magnetic module and the second magnetic module. 1. A window cleaning robot comprising a first cleaning unit and a second cleaning unit , which are respectively attached to and move on both surfaces of a window by magnetic force , the window cleaning robot comprising:a first magnetic module included in the first cleaning unit;a second magnetic module included in the second cleaning unit; anda magnetic force or tension sensing part for sensing magnetic force between the first magnetic module and the second magnetic module; anda magnetic force controller for controlling the magnetic force between the first magnetic module and the second magnetic module,wherein the first magnetic module comprises a first magnet which is rotationally mounted, and a second magnet and a third magnet disposed on both sides of the first magnet, andthe magnetic force controller rotates the first magnet so as to control the magnetic force between the first magnetic module and the second magnetic module.2. The window cleaning robot of claim 1 , wherein the magnetic force controller ...

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Номер записи: 86
10-02-2022 дата публикации

ELECTRONIC DEVICE AND METHOD FOR VOICE RECOGNITION

Номер: US20220044690A1
Автор: JE Seong-Min, JUNG Seok-Yeong, Kang Hyuk, KIM Kyung-Tae, LEE Sang-hoon
Принадлежит:

A portable communication device is provided. A memory stores a first voice recognition module and a second voice recognition module. The first voice recognition module is capable of recognizing a wake-up voice command to activate the second voice recognition module. The second voice recognition module is capable of recognizing a plurality of voice commands other than the wake-up voice command. A processor is configured to recognize, using the first voice recognition module, the wake-up voice command from a first voice input, and activate the second voice recognition module. The processor is also configured to transmit, using the second voice recognition module, a second voice input to an external electronic device. The processor is further configured to recognize, using the second voice recognition module, a second voice command from a third voice input while a specified application is executed, and perform a specified function corresponding to the second voice command. 1. A portable communication device comprising:a display;communication circuitry;a microphone;a memory storing a first voice recognition module and a second voice recognition module, the first voice recognition module capable of recognizing a wake-up voice command to activate the second voice recognition module, and the second voice recognition module capable of recognizing a plurality of voice commands other than the wake-up voice command; and recognize, using the first voice recognition module, the wake-up voice command from a first voice input received via the microphone;', 'activate the second voice recognition module based at least in part on the recognizing of the wake-up voice command;', 'transmit, using the second voice recognition module, a second voice input received after the first voice input via the microphone to an external electronic device via the communication circuitry such that a first voice command of the plurality of voice commands is to be recognized by the external electronic ...

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Номер записи: 87
28-01-2021 дата публикации

METHOD OF TRANSMITTING PROXIMITY SERVICE DATA AND ELECTRONIC DEVICE FOR THE SAME

Номер: US20210029625A1
Автор: Choi Yong-Hae, Chung Young-Kwan, JUNG Bu-Seop, Kang Christopher, Kang Hyuk, Kim Ju-Ho, Son Dong-II
Принадлежит:

An electronic device in a neighbor awareness networking (NAN) cluster is provided. The electronic device includes a wireless fidelity (Wi-Fi) transceiver; and a processor, coupled with the Wi-Fi transceiver, configured to perform a synchronization with at least one device in the NAN cluster, wherein the at least one device comprises an external electronic device, after performing the synchronization, receive, from the external electronic device through the Wi-Fi transceiver, a frame including first data within at least one discovery window (DW) among a plurality of DWs, wherein the first data comprises channel information for second data, and time information for the second data, and based on the channel information and the time information, control the Wi-Fi transceiver to receive the second data at a channel corresponding to the channel information of the received first data during a time duration corresponding to the time information of the received first data. 1. An electronic device operable in a neighbor awareness networking (NAN) cluster , the electronic device comprising:a Bluetooth low energy (BLE) module;a wireless fidelity (Wi-Fi) transceiver; and receive, through the BLE module, a BLE signal comprising a first service identifier to trigger an NAN operation of the Wi-Fi transceiver,', activate the Wi-Fi transceiver to perform the NAN operation, and', 'transmit, through the BLE module, the second service identifier,', 'perform, through the activated Wi-Fi transceiver, a time synchronization with at least one device in the NAN cluster for providing a service indicated by the first service identifier, and, 'in response to the first service identifier corresponding to a second service identifier of the electronic device, 'after performing the time synchronization, control the Wi-Fi transceiver to receive data from an external device in the NAN cluster., 'a processor, operatively coupled with the BLE module and the Wi-Fi transceiver, configured to2. The ...

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Номер записи: 88
17-02-2022 дата публикации

Phenazine-based compound, electrolytic liquid comprising same for redox flow battery, and redox flow battery

Номер: US20220048869A1
Автор: Dong Myoung Shin, Gi Yun KWON, Ji Eon Kwon, Ki Suk Kang, Kyu Nam Lee, Soo Young Park, Tae Hyuk Kang, Yong Hee Lee
Принадлежит: Lotte Chemical Corp, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

The present invention relates to: a phenazine-based compound having a particular substituent; an electrolytic liquid comprising same for a redox flow battery; and a redox flow battery. The phenazine-based compound is a multi-redox organic substance capable of inducing a two-stage reversible redox reaction and shows high solubility in a non-aqueous solvent. Thus, the employment of the phenazine-based compound can provide an electrolytic liquid for a redox flow battery, capable of expressing high energy density, and a redox flow battery.

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Номер записи: 89
02-02-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20170031848A1
Автор: KANG Hyuk Choong
Принадлежит:

A semiconductor device includes a memory device, a host, and an interface. The memory device includes various types of memory units configured to be mounted to one slot. The host stores memory characteristic information of the various types of memory units contained in the memory device, processes a signal for the memory units on the basis of the memory characteristic information, and transmits and receives the processed signal to and from the memory units. The interface allows the host to interface with the various types of memory units contained in the memory device. 1. A semiconductor device comprising:a memory device including various types of memory units configured to be installed in one slot;a host configured to store memory characteristic information of the various types of memory units contained in the memory device, process a signal for the memory units on the basis of the memory characteristic information, and transmit and receive the processed signal to and from the memory units; andan interface configured to allow the host to interface with the various types of memory units contained in the memory device.2. The semiconductor device according to claim 1 , wherein the memory device includes:a master memory unit block configured to communicate with the host through the interface and include various types of master memory units; andat least one slave memory unit block coupled to the master memory unit through a relay unit and configured to include various types of slave memory units.3. The semiconductor device according to claim 2 , wherein the same type of memory units among the various types of master memory units and the various types of slave memory units are interconnected through the relay unit within one channel.4. The semiconductor device according to claim 3 , wherein the host generates the memory characteristic information for each channel claim 3 , generates an AC parameter on the basis of the memory characteristic information claim 3 , and ...

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Номер записи: 90
05-02-2015 дата публикации

LOGIC FINFET HIGH-K/CONDUCTIVE GATE EMBEDDED MULTIPLE TIME PROGRAMMABLE FLASH MEMORY

Номер: US20150035039A1
Автор: Kang Seung Hyuk, Li Xia, YANG Bin
Принадлежит: QUALCOMM INCORPORATED

A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type. The method further includes forming a floating gate dielectric to partially surround the fins. The method also includes forming a floating gate on the floating gate dielectric. The method also includes forming a coupling film on the floating gate and forming a coupling gate on the coupling film. 1. A method of fabricating a multiple time programmable (MTP) device , comprising:forming a plurality of fins of a first conducting type on a substrate of a second conducting type;forming a floating gate dielectric to partially surround the plurality of fins;forming a floating gate on the floating gate dielectric;forming a coupling film on the floating gate; andforming a coupling gate on the coupling film.2. The method of claim 1 , in which the floating gate is configured to store logic states of the MTP device.3. The method of claim 1 , in which the coupling film and coupling gate partially surround the floating gate.4. The method of claim 1 , in which the floating gate comprises an input/output (I/O) device having the floating gate dielectric with an increased thickness.5. The method of claim 1 , in which the floating gate dielectric has a dielectric constant greater than a dielectric constant of silicon oxide.6. The method of claim 1 , further comprising forming an erase dielectric coupled to the floating gate.7. The method of claim 1 , further comprising integrating the MTP device into a mobile phone claim 1 , a set top box claim 1 , a music player claim 1 , a video player claim 1 , an entertainment unit claim 1 , a navigation device claim 1 , a computer claim 1 , a hand-held personal communication systems (PCS) unit claim 1 , a portable data unit claim 1 , and/or a fixed location data unit.8. A multiple time programmable (MTP) device claim 1 , comprising:a substrate;a fin having a first wall, a second wall, and a ...

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Номер записи: 91
01-05-2014 дата публикации

RESISTANCE-BASED MEMORY HAVING TWO-DIODE ACCESS DEVICE

Номер: US20140119097A1
Автор: Hao Wuyang, Kang Seung Hyuk, Kim Jung Pill, Kim Taehyun, Lee Kangho, Suh Jungwon
Принадлежит: QUALCOMM INCORPORATED

A resistance-based memory includes a two-diode access device. In a particular embodiment, a method includes biasing a bit line with a first voltage. The method further includes biasing the sense line with a second voltage. Biasing the bit line and biasing the sense line generates a current through a resistance-based memory element and through one of a first diode and a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line. 1. An apparatus comprising:a memory cell comprising a word line, a bit line, a sense line, and a resistance-based memory element;means for accepting a current from the word line through the resistance-based memory element; andmeans for accepting a current from the sense line through the resistance-based memory element and for opposing the current from the word line through the resistance-based memory element.2. The apparatus of claim 1 , further comprising means for applying a voltage to the resistance-based memory element.3. The apparatus of claim 2 , wherein applying the voltage to the resistance-based memory element generates the current from the word line through the resistance-based memory element.4. The apparatus of claim 3 , wherein the current from the word line through the resistance-based memory element corresponds to a logical zero write operation or to a read operation.5. The apparatus of claim 1 , further comprising means for applying a voltage at the source line and at the bit line.6. The apparatus of claim 5 , wherein applying the voltage at the source line and at the bit line generates the current from the sense line through the resistance-based memory element.7. The apparatus of claim 6 , wherein the current from the sense line through the resistance-based memory element corresponds to a logical one write operation.8. The apparatus of claim 1 , integrated in at least one semiconductor die.9. The apparatus of claim 1 , further comprising a device selected ...

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Номер записи: 92
17-02-2022 дата публикации

DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

Номер: US20220052031A1
Автор: CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk, KIM Dae Hyun
Принадлежит:

A display device may include: a substrate including a display area and a non-display area; and pixels provided on the display area, and each including sub-pixels each including an emission area and a non-emission area. Each sub-pixel may include a pixel circuit layer including at least one transistor, and a display element layer including at least one light emitting element configured to emit light and connected to the transistor. The display element layer may include: a first electrode and a second electrode spaced apart from each other with the light emitting element interposed therebetween; the light emitting element connected between the first and second electrodes; and a planarization layer provided on the pixel circuit layer, and coming into contact with at least a portion of each of opposite ends of the light emitting element. The planarization layer may overlap with each of the first electrode and the second electrode. 1. A display device comprising:a substrate comprising a display area and a non-display area; anda plurality of pixels on the display area, each of the plurality of pixels comprising a plurality of sub-pixels,wherein each sub-pixel of the plurality of sub-pixels comprises an emission area and a non-emission area: a pixel circuit layer comprising at least one transistor; and a display element layer comprising at least one light emitting element connected to the at least one transistor to emit light, a first electrode and a second electrode spaced apart from each other with the at least one light emitting element therebetween;', 'the at least one light emitting element connected between the first electrode and the second electrode; and', 'a planarization layer on the pixel circuit layer, and in contact with at least a portion of each of opposite ends of the at least one light emitting element,', 'wherein the planarization layer overlaps with each of the first electrode and the second electrode in a plan view., 'wherein the display element layer ...

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Номер записи: 93
30-01-2020 дата публикации

LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF

Номер: US20200033669A1
Автор: CHO Hyun Min, Kang Jong Hyuk, PARK Hae Il, PARK JAE BYUNG, Yun Sung Sik
Принадлежит:

A wide viewing angle liquid crystal display includes color filters having a quantum dot and scattering particles and liquid crystal layer disposed in a microcavity, a distance between the color filter and the liquid crystal layer being sized to minimize display deterioration due to parallax. 1. A display device , comprising:a first substrate and a second substrate overlapping each other;a color filter disposed on the second substrate, the color filter comprising a first color filter comprising a red quantum dot particle, a second color filter comprising a green quantum dot particle, and a third color filter comprising a transparent material and scattering particles therein; anda blue light blocking layer disposed between the second substrate and the first color filter and between the second substrate and the second color filter.2. The display device of claim 1 , further comprising:a light blocking member disposed between the adjacent color filters.3. The display device of claim 1 , further comprising:a multilayer disposed between the color filter and the first substrate and overlapping the first color filter, the second color filter and the third color filter.4. The display device of claim 3 , wherein the multilayer comprises at least two layers having different refractive indexes.5. The display device of claim 3 , wherein the multilayer transmits only the blue wavelength band and blocks other wavelength bands.6. The display device of claim 1 ,wherein a first distance is between a first surface of the second substrate and a surface of the first color filter,a second distance is between the first surface of the second substrate and a surface of the second color filter,a third distance is between the first surface of the second substrate and a surface of the third color filter, andthe first, the second and the third distances are substantially the same.7. The display device of claim 1 , further comprisingan organic layer disposed between the color filter and the first ...

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Номер записи: 94
31-01-2019 дата публикации

Vertical-type semiconductor devices and methods of manufacturing the same

Номер: US20190035809A1
Автор: Jong-Hyuk Kang, Jong-wook Lee, Yong-Hoon Son
Принадлежит: SAMSUNG ELECTRONICS CO LTD

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

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Номер записи: 95
09-02-2017 дата публикации

METHOD AND ELECTRONIC DEVICE FOR PERFORMING CONNECTION BETWEEN ELECTRONIC DEVICES

Номер: US20170039845A1
Автор: CHOI Young-Jae, JIN In-Ji, Kang Hyuk, LIM Jun-Hak
Принадлежит:

A method of performing a connection between electronic devices and an electronic device thereof. The method may include: receiving a first signal including first information of the media device through first communication mode; generating a second signal including identification information of the media device by using at least a part of the first information in response to the first signal; transmitting the second signal to the media device through the first communication mode; and performing a connection with the media device by using the first information. 1. An electronic device for performing a connection with a media device , the electronic device comprising:a communication module that receives from the media device through a first communication mode a first signal including a first information of the media device; anda processor that generates a second signal including identification information of the media device by using one or more information items of the first information in response to receiving the first signal, controls a communication module to transmit the second signal to the media device through the first communication mode, and performs an operative connection with the media device by using the first information through the communication module.2. The electronic device of claim 1 , further comprising a sensor that receives a third signal through a second communication mode including second information of the media device that is different from the first information.3. The electronic device of claim 2 , wherein each portion of the first information and the second information includes one or more information items regarding a configuration state of the media device claim 2 , information regarding an operation state of the media device claim 2 , device information of the media device claim 2 , and connection information of the media device.4. The electronic device of claim 2 , wherein claim 2 , in response to determining that the media device has ...

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Номер записи: 96
11-02-2016 дата публикации

RESISTIVE MEMORY DEVICE WITH ZERO-TRANSISTOR, ONE-RESISTOR BIT CELLS INTEGRATED WITH ONE-TRANSISTOR, ONE-RESISTOR BIT CELLS ON A DIE

Номер: US20160043137A1
Автор: Kang Seung Hyuk, Lu Yu
Принадлежит:

A resistive memory array includes an array of one-transistor, one-resistor (1T1R) bit cells on a die. The resistive memory array also includes an array of zero-transistor, one-resistor (0T1R) bit cells arranged with the array of 1T1R bit cells on the same die. 1. A resistive memory array , comprising:an array of one-transistor, one-resistor (1T1R) bit cells on a die; andan array of zero-transistor, one-resistor (0T1R) bit cells arranged with the array of 1T1R bit cells on the same die.2. The resistive memory array of claim 1 , in which the array of 0T1R bit cells is stacked on the array of 1T1R bit cells.3. The resistive memory array of claim 1 , in which a 0T1R bit cell is disposed within a footprint of a 1T1R bit cell.4. The resistive memory array of claim 1 , in which the array of 0T1R bit cells and the array of 1T1R bit cells are integrated within different back-end-of-line (BEOL) interconnect layers.5. The resistive memory array of claim 1 ,in which the array of 0T1R bit cells comprises a resistive random access memory (RRAM), a phase change memory (PCM) or a spin-transfer-torque magnetoresistive random access memory (STT-MRAM), andin which the array of 1T1R bit cells comprises RRAM, PCM or STT-MRAM.6. The resistive memory array of claim 1 , in which each 1T1R bit cell comprises a single-crystal semiconductor device directly coupled to a resistor.7. The resistive memory array of claim 6 , in which the resistor comprises a resistive random access memory (RRAM) element claim 6 , a conductive-bridge-RAM (CBRAM) element claim 6 , a phase change memory (PCM) element claim 6 , a magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) or a spin transfer torque magnetoresistive random access memory (STT-MRAM).8. The resistive memory array of claim 1 , in which each 0T1R bit cell comprises a resistor claim 1 , the resistor comprising a resistive random access memory (RRAM) element claim 1 , a conductive-bridge-RAM (CBRAM) element claim 1 , a phase change ...

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Номер записи: 97
11-02-2016 дата публикации

SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS

Номер: US20160043304A1
Автор: Chen Wei-Chuan, Kang Seung Hyuk, Li Xia, Lu Yu, Park Chando, Zhu Xiaochun
Принадлежит:

A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer. 1. A perpendicular magnetic tunnel junction (pMTJ) device , comprising:a perpendicular reference layer;a tunnel barrier layer on a surface of the perpendicular reference layer;a perpendicular free layer on the surface of the tunnel barrier layer;a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer; anda high permeability material on the dielectric passivation layer configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for the stray field from the perpendicular reference layer.2. The pMTJ device of claim 1 , in which the perpendicular reference layer comprises a single layer.3. The pMTJ device of claim 1 , in which the perpendicular reference layer comprises a synthetic antiferromagnetic (SAF) layer.4. The pMTJ device of claim 1 , in which the high permeability material comprises Mu-metal claim 1 , nickel iron (NiFe)-based materials claim 1 , iron-based materials claim 1 , ferrite claim 1 , permalloys claim 1 , oxygen doping and nitride doping.5. The pMTJ device of claim 1 , in which the perpendicular reference layer extends laterally outside the perpendicular free layer.6. The pMTJ device of claim 1 , in which the dielectric passivation layer comprises ...

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Номер записи: 98
08-02-2018 дата публикации

REDUCING OR AVOIDING METAL DEPOSITION FROM ETCHING MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES, INCLUDING MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICES

Номер: US20180040668A1
Автор: Kan Jimmy Jianan, Kang Seung Hyuk, Park Chando
Принадлежит:

Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of the MTJ device. In this manner, etching of the bottom electrode may be reduced or avoided to reduce or avoid metal redeposition as a result of over-etching the MTJ device to avoid horizontal shorts between an adjacent device(s). In another example, a seed layer is embedded in a bottom electrode of the MTJ device. In this manner, the MTJ stack is reduced in height to reduce or avoid metal redeposition as a result of over-etching the MTJ device. In another example, an MTJ device includes an embedded seed layer in a bottom electrode which also has a width less than a width of the MTJ stack. 1. A magnetic tunnel junction (MTJ) device , comprising:a bottom electrode having a width and a top surface;a dielectric material layer disposed adjacent to the bottom electrode and at least partially below the top surface of the bottom electrode;a seed layer; a pinned layer disposed above the seed layer;', 'a free layer disposed above the seed layer; and', 'a tunnel barrier disposed between the pinned layer and the free layer, the tunnel barrier configured to provide a tunnel magnetoresistance between the pinned layer and the free layer; and, 'an MTJ stack pillar having a width larger than the width of the bottom electrode and disposed above and in electrical contact with the bottom electrode, the MTJ stack pillar comprisingan over-etch trench disposed in the dielectric material layer adjacent to the MTJ stack pillar and extending below the top surface of the bottom electrode, wherein the over-etch trench does not extend into the bottom electrode.24-. (canceled)5. The MTJ device of claim 1 , further comprising a redeposited dielectric material from the dielectric material layer adjacent to an outer surface of the MTJ stack pillar.6. The MTJ device of ...

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Номер записи: 99
09-02-2017 дата публикации

ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERPENDICULAR POLARIZER

Номер: US20170040945A1
Автор: Kan Jimmy, Kang Seung Hyuk, Lee Kangho
Принадлежит:

An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer. 1. An apparatus comprising:a circuit configured to generate a first signal associated with a current magnitude between approximately 20 μA and approximately 155 μA;a polarizer of a spin-torque oscillator (STO), the polarizer having a perpendicular magnetic anisotropy (PMA), the polarizer configured to receive the first signal; anda magnetically soft oscillating region including an antiferromagnetic (AF) coupling layer coupling a first free layer to a second free layer and located between the polarizer and a reference region, the reference region configured to output a second signal tunable down to a frequency of approximately 500 MHz in response to the first signal.2. The apparatus of claim 1 , wherein the second signal is tunable between approximately 500 MHz and approximately 8 GHz in response to the first signal.3. The apparatus of claim 1 , wherein the AF coupling layer is configured to cause a first magnetic moment of the first free layer to oscillate in a first direction that is different than a second direction of oscillation of a second magnetic moment of the second free layer.4. The apparatus of claim 1 , wherein the first free layer and the second free layer have in-plane magnetic anisotropies or no particular magnetic anisotropy claim 1 , and wherein the polarizer includes one or more magnetically hard perpendicular materials.5. The apparatus of claim 1 , wherein the second signal includes a particular frequency range claim 1 , the particular frequency range within a particular radio frequency (RF) communications range claim 1 , and wherein the ...

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Номер записи: 100
08-02-2018 дата публикации

ELECTRONIC DEVICE AND POWER CONTROL METHOD OF ELECTRONIC DEVICE

Номер: US20180041349A1
Автор: BANG Hye-Jung, CHO Nam-Ju, CHOI Bo-Kun, JEONG Ki-Yeong, JUNG Bu-Seop, KANG Doo-Suk, Kang Hyuk, KIM Bum-Jib, LEE Jung-Hun, LEE Soon-Ho, LEE Young-Kow
Принадлежит:

An electronic device and a power control method of an electronic device are provided. The electronic device may include: a communication circuit including a first circuit configured to perform first communication and a second circuit configured to perform second communication; a processor electrically connected to the communication circuit; and a memory electrically connected to the processor, wherein, the memory stores instructions that, when executed, cause the processor to perform operations comprising: controlling the first circuit to operate according to a first power control mode associated with the first communication, and controlling the second circuit to operate according to a second power control mode associated with the second communication when the first communication and the second communication are concurrently performed through the first circuit and the second circuit; identifying a first sleep period during which the first circuit operates in a sleep mode according to the first power control mode, and a second sleep period during which the second circuit operates in the sleep mode according to the second power control mode; and controlling the communication circuit to operate in a deep sleep mode in which the communication circuit operates with power that is less than or equal to a predetermined power in a period where the first sleep period and the second sleep period coincide. 1. An electronic device , comprising:a communication circuit including a first circuit configured to perform first communication and a second circuit configured to perform second communication;a processor electrically connected to the communication circuit; anda memory electrically connected to the processor, wherein, the memory stores instructions which, when executed by the processor, cause the processor to perform operations comprising:controlling the first circuit to operate according to a first power control mode associated with the first communication, and controlling ...

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Номер записи: 101
18-02-2016 дата публикации

DIFFERENTIAL MAGNETIC TUNNEL JUNCTION PAIR INCLUDING A SENSE LAYER WITH A HIGH COERCIVITY PORTION

Номер: US20160049185A1
Автор: Kang Seung Hyuk, Lu Yu
Принадлежит:

An apparatus includes a first magnetic tunnel junction (MTJ) device of a differential MTJ pair. The apparatus further includes a second MTJ device of the differential MTJ pair. The first MTJ device includes a sense layer having a high coercivity portion. 1. An apparatus comprising:a first magnetic tunnel junction (MTJ) device of a differential MTJ pair; anda second MTJ device of the differential MTJ pair,wherein the first MTJ device comprises an antiferromagnetic (AFM) layer, a storage layer on the AFM layer and having n and a sense layer having a high coercivity portion.2. The apparatus of claim 1 , wherein a difference between a first state of the first MTJ device and a second state of the second MTJ device indicates a value associated with the differential MTJ pair.3. The apparatus of claim 2 , wherein the first state is a first magnetoresistance of the first MTJ device claim 2 , wherein the second state is a second magnetoresistance of the second MTJ device claim 2 , and wherein the difference indicates whether the first magnetoresistance is greater than the second magnetoresistance.4. The apparatus of claim 1 , wherein the first MTJ device further comprises a tunnel barrier layer on the storage layer claim 1 , wherein the sense layer is on the tunnel barrier layer.5. The apparatus of claim 1 , wherein the high coercivity portion has a first coercivity of greater than 1000 oersted (Oe) claim 1 , and wherein the low coercivity portion has a second coercivity of less than 100 Oe.6. The apparatus of claim 1 , wherein the high coercivity portion comprises a cobalt/iron/boron (Co/Fe/B) material claim 1 , and wherein the low coercivity portion comprises an iron/nickel (Fe/Ni) material.7. The apparatus of claim 1 , wherein the first MTJ device is coupled to a first source line via a first transistor claim 1 , and wherein the second MTJ device is coupled to a second source line via a second transistor.8. The apparatus of claim 1 , wherein the first MTJ device and the ...

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Номер записи: 102
16-02-2017 дата публикации

METALLIZATION PROCESS FOR A MEMORY DEVICE

Номер: US20170047374A1
Автор: Kang Seung Hyuk, Lu Yu
Принадлежит:

A method of fabrication of a device includes forming a first metallization layer that is coupled to a logic device of the device. The method further includes forming a second metallization layer that is coupled to a magnetoresistive random access memory (MRAM) module of the device. The second metallization layer is independent of the first metallization layer. 1. A method of fabrication of a device , the method comprising:forming a first metallization layer that is coupled to a logic device of a device; andforming a second metallization layer that is coupled to a magnetoresistive random access memory (MRAM) module of the device, wherein the second metallization layer is independent of the first metallization layer.2. The method of claim 1 , wherein the first metallization layer is formed using a back-end-of-line (BEOL) metallization process claim 1 , and wherein the second metallization layer is formed using a metallization process that is dedicated to forming one or more components associated with the MRAM module.3. The method of claim 2 , wherein the BEOL metallization process specifies a positive integer number n of metallization layers claim 2 , and wherein the device includes at least n+1 metallization layers.4. The method of claim 2 , wherein forming the second metallization layer includes performing a damascene process to form the one or more components claim 2 , and wherein the one or more components include one or more of a bit line of the MRAM module or an array contact of the MRAM module.5. The method of claim 1 , further comprising forming a third metallization layer after forming the second metallization layer claim 1 , wherein the first metallization layer is associated with a first pitch that is less than a second pitch associated with the third metallization layer.6. The method of claim 5 , wherein the first pitch is a particular pitch that complies with a back-end-of-line (BEOL) metallization process of the device.7. The method of claim 5 , wherein ...

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Номер записи: 103
16-02-2017 дата публикации

Shadow-effect compensated fabrication of magnetic tunnel junction (mtj) elements

Номер: US20170047510A1
Автор: Chando Park, Seung Hyuk KANG, Wei-Chuan Chen, Yu Lu
Принадлежит: Qualcomm Inc

Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operational margin. In certain aspects, to reduce size of a free layer during fabrication of an MTJ to provide enhanced write and retention symmetry, ion beam etching (IBE) fabrication process is employed to fabricate a free layer smaller than the pinned layer. To avoid asymmetrical footing being fabricated in free layer due to shadow-effect of neighboring MTJs, an ion beam directed at the MTJ is shadow-effect compensated. The angle of incidence of the ion beam directed at the MTJ is varied as the MTJ is rotated to be less steep when another MTJ is in directional line of the ion beam and the MTJ being fabricated. Thus, the free layer is etched more uniformly in the MTJ while avoiding increased etching damage.

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Номер записи: 104
16-02-2017 дата публикации

Comparator including a magnetic tunnel junction (mtj) device and a transistor

Номер: US20170047912A1
Автор: Jimmy Kan, Kangho Lee, Manu RASTOGI, Seung Hyuk KANG
Принадлежит: Qualcomm Inc

A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

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Номер записи: 105
08-05-2014 дата публикации

ELECTRONIC DEVICE AND METHOD FOR IDENTIFYING LOCATION OF INTERESTED DEVICE

Номер: US20140127988A1
Автор: HYUN Eun-Jung, JUNG Eui-Chang, Kang Hyuk, PARK Jeong-Min
Принадлежит: Samsung Electronics Co., Ltd

A method identifies a location of an interested device. The method includes: transmitting first information of an interested device from a relay nearest to the electronic device among one or more relays; receiving second information of the interested device from the nearest relay; and displaying location information of the interested device based on the received second information. 1. A method in an electronic device , comprising:transmitting first information of an interested device from a relay nearest to the electronic device among one or more relays;receiving second information of the interested device from the nearest relay; anddisplaying location information of the interested device based on the received second information.2. The method of claim 1 , further comprising executing an application for identifying the location information of the interested device.3. The method of claim 1 , further comprising:searching for the nearest relay among the one or more relays; andconnecting to the searched nearest relay.4. The method of claim 1 , wherein the one or more layers are connected to one another through an encrypted communication channel.5. The method of claim 1 , wherein the first information of the interested device is ID information of the interested device.6. The method of claim 1 , wherein the second information of the interested device is ID information of the interested device claim 1 , and ID information and location information of a relay nearest to the interested device among the one or more relays.7. The method of claim 1 , wherein transmitting the first information of the interested device and receiving the second information of the interested device from the nearest relay are performed in an encrypted packet form.8. The method of claim 1 , wherein displaying the location information of the interested device based on the received second information comprises:identifying location information of a relay nearest to the interested device included in the ...

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Номер записи: 106
26-02-2015 дата публикации

MTJ STRUCTURE AND INTEGRATION SCHEME

Номер: US20150056722A1
Автор: Kang Seung Hyuk, Li Xia, Nowak Matthew Michael
Принадлежит:

A memory device may comprise a magnetic tunnel junction (MTJ) stack, a bottom electrode (BE) layer, and a contact layer. The MTJ stack may include a free layer, a barrier, and a pinned layer. The BE layer may be coupled to the MTJ stack, and encapsulated in a planarized layer. The BE layer may also have a substantial common axis with the MTJ stack. The contact layer may be embedded in the BE layer, and form an interface between the BE layer and the MTJ stack. 1. A method for fabricating a memory device , comprising:depositing an MTJ stack including a free layer, a barrier layer, and a pinned layer,depositing a BE layer coupled to the MTJ stack, encapsulated in a planarized layer, and having a substantially common axis with the MTJ stack; anddepositing a contact layer embedded in the BE layer, the contact layer forming an interface between the BE layer and the MTJ stack,wherein the contact layer is a first anti-ferromagnetic (AFM) layer and wherein the MTJ stack further includes a second AFM layer coupling the MTJ stack to the first AFM layer.2. The method of claim 1 , wherein the planarized layer comprises a cap film layer.3. The method of claim 1 , wherein the contact layer is an AFM layer.4. The method of claim 3 , wherein the MTJ stack further includes a second AFM layer coupling the MTJ stack to the first AFM layer.5. The method of claim 1 , wherein the MTJ stack is deposited to directly contact at least a portion of the BE layer.6. The method of claim 1 , wherein the MTJ stack is deposited such that there is no direct contact between the MTJ stack and the BE layer.7. The method of claim 1 , wherein the BE layer is deposited to engage the planarized layer at an edge that is sloped in relation to the planarized layer.8. The method of claim 1 , wherein a minimum width of the BE layer is in a range of about 0.5 to 10 times the minimum width of the MTJ stack.9. The method of claim 1 , further comprising performing a reverse etching process and a CMP process on the ...

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Номер записи: 107
14-02-2019 дата публикации

DYNAMICALLY CONTROLLING VOLTAGE FOR ACCESS OPERATIONS TO MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) BIT CELLS TO ACCOUNT FOR AMBIENT TEMPERATURE

Номер: US20190051341A1
Автор: Chen Wei-Chuan, Hsu Wah Nam, Kang Seung Hyuk, Li Xia
Принадлежит:

Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature is disclosed. An MRAM bit cell process variation measurement circuit (PVMC) is configured to measure process variations and ambient temperature in magnetic tunnel junctions (MTJs) that affect MTJ resistance, which can change the write current at a given fixed supply voltage applied to an MRAM bit cell. These measured process variations and ambient temperature are used to dynamically control a supply voltage for access operations to the MRAM to reduce the likelihood of bit errors and reduce power consumption. The MRAM bit cell PVMC may also be configured to measure process variations and/or ambient temperatures in logic circuits that represent the process variations and ambient temperatures in access transistors employed in MRAM bit cells in the MRAM to determine variations in the switching speed (i.e., drive strength) of the access transistors. 1. A magneto-resistive random access memory (MRAM) bit cell process variation measurement circuit (PVMC) for determining process variation and ambient temperature in MRAM bit cells in an MRAM array , the MRAM bit cell PVMC comprising:a supply voltage input configured to receive a supply voltage coupled to the MRAM array;an MRAM bit cell PVMC output; [ a measurement transistor of a metal oxide semiconductor (MOS) type of an access transistor in at least one MRAM bit cell in the MRAM array; and', 'a measurement MTJ device of a type of an MTJ device in the at least one MRAM bit cell in the MRAM array, the measurement MTJ device coupled to the measurement transistor; and, 'one or more MTJ circuits, each comprising, 'an MTJ PVMC output coupled to the MRAM bit cell PVMC output; and, 'a magnetic tunnel junction (MTJ) PVMC coupled to the supply voltage input, the MTJ PVMC comprisingan ambient temperature input coupled to the MRAM bit cell PVMC output, the ambient temperature input ...

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Номер записи: 108
25-02-2016 дата публикации

METHOD OF CONTROLLING TRANSMIT POWER AND ELECTRONIC DEVICE THEREFOR

Номер: US20160057599A1
Автор: Choi Jong Ho, HONG Duk Ki, Kang Hyuk, KIM Min Gyew, LIM Kyung Soo, YOO Jae Bong
Принадлежит:

A method for determining a transmit power level in an electronic device and the electronic device thereof are provided. The method includes activating an emergency mode, determining a transmit power level based on a condition, and transmitting an emergency message, including information associated with a request for rescue, with the determined transmit power level. 1. A method for determining a transmit power level of an electronic device , the method comprising:activating an emergency mode;determining a transmit power level based on a predetermined condition; andtransmitting an emergency message, including information associated with a request for rescue, with the determined transmit power level.2. The method of claim 1 , further comprising:collecting state information obtained by the electronic device with respect to the electronic device or a user of the electronic device.3. The method of claim 2 ,wherein the state information comprises at least one of position information of the electronic device, motion information including position change information and acceleration change information of the electronic device, a time point when the emergency mode is activated, or bio-information including a heart rate and blood oxygen saturation of the user, and{'sub': '2', 'wherein the blood oxygen saturation comprises saturation of peripheral oxygen (SpO).'}4. The method of claim 1 , further comprising:receiving a session generation request from another electronic device which receives the transmitted emergency message; andgenerating a session with the other electronic device.5. The method of claim 4 , further comprising:transmitting state information to the other electronic device through the generated session.6. The method of claim 1 , wherein the information associated with the request for rescue comprises a text message or has a message type.7. The method of claim 1 , wherein the emergency message further comprises information on the electronic device or user ...

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Номер записи: 109
25-02-2021 дата публикации

HYBRID FIN FLIP FLOP CIRCUIT ARCHITECTURE

Номер: US20210058076A1
Автор: Kang Seung Hyuk, LIM Hyeokjin, Vilangudipitchai Ramaprasath, ZHAO Andi
Принадлежит:

A hybrid fin flip flop circuit may comprise a mixture of 1-fin transistors and multi-fin transistors. In one example, a flip flop circuit may comprise 1-fin transistors in at least one of the critical paths of the flip flop circuit such as the drive circuit, the input circuit, or the output circuit. In one example, a flip flop circuit may include: an input circuit; a clock driver circuit; an output circuit; and a latch circuit; wherein one of the input circuit, the clock driver circuit, or the output circuit comprises a multi-fin transistor and the latch circuit comprises a plurality of 1-fin transistors. 1. A flip flop circuit comprising:an input circuit;a clock driver circuit;an output circuit; anda latch circuit;wherein one of the input circuit, the clock driver circuit, or the output circuit comprises a multi-fin transistor and the latch circuit comprises a plurality of 1-fin transistors.2. The flip flop circuit of claim 1 , wherein the clock driver circuit comprises a multi-fin transistor.3. The flip flop circuit of claim 2 , wherein the clock driver circuit comprises a plurality of multi-fin transistors.4. The flip flop circuit of claim 2 , wherein the output circuit comprises a multi-fin transistor.5. The flip flop circuit of claim 4 , wherein the output circuit comprises an inverter with the multi-fin transistor.6. The flip flop circuit of claim 4 , wherein the input circuit comprises a multi-fin transistor.7. The flip flop circuit of claim 6 , wherein the input circuit comprises a plurality of multi-fin transistors.8. The flip flop circuit of claim 1 , wherein the flip flop circuit is incorporated into a device selected from the group consisting of a music player claim 1 , a video player claim 1 , an entertainment unit claim 1 , a navigation device claim 1 , a communications device claim 1 , a mobile device claim 1 , a mobile phone claim 1 , a smartphone claim 1 , a personal digital assistant claim 1 , a fixed location terminal claim 1 , a tablet computer ...

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Номер записи: 110
25-02-2016 дата публикации

METHOD FOR SELECTING COMMUNICATION METHOD AND ELECTRONIC DEVICE THEREOF

Номер: US20160057803A1
Автор: Kang Hyuk, KIM Gi-Beom, KWON Jun-Sik, LEE Hyun-Ju, LIM Jun-Hak, Park Chun-Ho
Принадлежит:

A method for operating of an electronic device includes: connecting communication with an external electronic device; identifying state information and service information of the electronic device and the external electronic device; and selecting at least one communication method based on the state information and the service information. An electronic device includes a communication module and a processor. The processor is configured to select at least one communication method from a plurality of communication methods based on state information and service information of the electronic device and the external electronic device 1. A method in an electronic device , comprising:establishing communication by the electronic device with an external electronic device;identifying, by the electronic device, state information and service information of the electronic device and the external electronic device; andselecting, by the electronic device, at least one communication method from a plurality of communication methods based on the state information and the service information.2. The method of claim 1 , wherein the state information of the electronic device and the external electronic device comprises at least one of communication state information claim 1 , wearing state information claim 1 , battery state information claim 1 , operation state information claim 1 , and sensor information claim 1 , andwherein the service information comprises at least one of a type of service, service priority, service importance, a type of data, and a data size.3. The method of claim 1 , wherein the selecting the at least one communication method of the plurality of communication methods comprises selecting at least one of a first communication method or a second communication method claim 1 ,wherein the first communication method and the second communication method have respectively different communication ranges.4. The method of claim 3 , further comprising claim 3 , in response to ...

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Номер записи: 111
10-03-2022 дата публикации

INKJET PRINTING DEVICE, INK EJECTING METHOD, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

Номер: US20220072864A1
Автор: CHO Hyun Min, Kang Jong Hyuk, Kim Han Su, YANG Eun A
Принадлежит: Samsung Display Co., Ltd.

An inkjet printing device includes an ink reservoir that stores ink containing particles, an inkjet head part that receives the ink from the ink reservoir and ejects the ink onto a target substrate and a driver for rotating the ink reservoir. 1. An inkjet printing device comprising:an ink reservoir that stores an ink that contains particles;an inkjet head part that receives the ink from the ink reservoir and ejects the ink onto a target substrate; anda driver that rotates the ink reservoir.2. The inkjet printing device of claim 1 , whereinthe driver rotates the ink reservoir with respect to a rotation axis, andthe rotation axis is a driving shaft of the driver on a reference plane that is perpendicular or tilted with respect to a direction of gravity acting on the ink of the ink reservoir.3. The inkjet printing device of claim 2 , wherein:the ink reservoir includes a first surface and a second surface opposite to the first surface, andthe reference plane is disposed at an equal distance from the first surface and the second surface.4. The inkjet printing device of claim 3 , wherein the ink reservoir includes:a first outlet disposed in the first surface of the ink reservoir; anda second outlet disposed in the second surface of the ink reservoir.5. The inkjet printing device of claim 4 , further comprising a first pipe and a second pipe claim 4 , whereinthe first outlet is connected to the inkjet head part through the first pipe, andthe second outlet is connected to the inkjet head part through the second pipe.6. The inkjet printing device of claim 5 , wherein at least one of the first outlet and the second outlet blocks a movement of the ink toward the inkjet head part.7. The inkjet printing device of claim 5 , further comprising:a valve connected to the first pipe and the second pipe; anda third pipe connected to the valve and the inkjet head part,wherein the valve blocks the connection to at least one of the first pipe, the second pipe, and the third pipe.8. The ...

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Номер записи: 112
05-03-2015 дата публикации

OFFSET CANCELING DUAL STAGE SENSING CIRCUIT

Номер: US20150063012A1
Автор: Jung Seong-Ook, Kang Seung Hyuk, Kim Jisu, Kim Jung Pill, Na Taehui
Принадлежит:

An offset canceling dual stage sensing method includes sensing a data value of a resistive memory data cell using a first load PMOS gate voltage generated by a reference value of a resistive memory reference cell in a first stage operation. The method also includes sensing the reference value of the resistive memory reference cell using a second load PMOS gate voltage generated by the data value of the resistive memory data cell in a second stage operation of the resistive memory sensing circuit. By adjusting the operating point of the reference cell sensing, an offset canceling dual stage sensing circuit increases the sense margin significantly compared to that of a conventional sensing circuit. 1. A sensing method , comprising:in a first stage operation of a resistive memory sensing circuit, sensing a data value of a resistive memory data cell using a first load PMOS gate voltage generated by a reference value of a resistive memory reference cell; andin a second stage operation of the resistive memory sensing circuit, sensing the reference value of the resistive memory reference cell using a second load PMOS gate voltage generated by the data value of the resistive memory data cell.2. The method of claim 1 , further comprising switching between the first stage operation and the second stage operation by switching circuitry between the resistive memory reference cell and the resistive memory data cell.3. The method of claim 1 , further comprising generating the data value and the reference value at an identical node.4. The method of claim 1 , further comprising integrating the resistive memory sensing circuit into a mobile phone claim 1 , a set top box claim 1 , a music player claim 1 , a video player claim 1 , an entertainment unit claim 1 , a navigation device claim 1 , a computer claim 1 , a hand-held personal communication systems (PCS) unit claim 1 , a portable data unit claim 1 , and/or a fixed location data unit.5. A sensing apparatus claim 1 , comprising:a ...

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Номер записи: 113
05-03-2015 дата публикации

METHOD FOR CONTROLLING TRANSMISSION SPEED AND ELECTRONIC DEVICE THEREOF

Номер: US20150063337A1
Автор: JANG Hyoung-Woo, Kang Hyuk, KHURANA Guneet Singh, KIM Kyoung-Hoon, LEE Woo-Kwang
Принадлежит:

A method of operating an electronic device is provided. The method includes communicating data with a wireless network using a wireless communication, connecting to an external electronic device using a wired communication, exchanging data with the external device at a first data throughput using the wired communication while performing the wireless communication, and changing the first data throughput to a second data throughput while performing the wireless communication. 1. A method in an electronic device , the method comprising:communicating data with a wireless network using a wireless communication;connecting to an external electronic device using a wired communication;exchanging data with the external device at a first data throughput using the wired communication while performing the wireless communication; andchanging the first data throughput to a second data throughput while performing the wireless communication.2. The method of claim 1 , wherein the performing of the wireless communication includes an operation of using a Long Term Evolution (LTE) communication protocol.3. The method of claim 1 , wherein the second data throughput is less than the first data throughput.4. The method of claim 1 , wherein the second data throughput is greater than the first data throughput.5. The method of claim 1 ,wherein the exchanging of the data at the first throughput includes an operation of using a Universal Serial Bus (USB) 3.0 protocol, andwherein the changing of the first data throughput to the second data throughput includes an operation of changing from a state of using the USB 3.0 protocol to a state of using a USB 2.0 protocol.6. The method of claim 1 ,wherein the exchanging of the data at the first data throughput includes an operation of using a Mobile High-definition Link (MHL) 2.0 protocol, andwherein the changing of the first data throughput to the second data throughput includes an operation of changing to a state of using an MHL 1.0 protocol.7. The ...

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Номер записи: 114
02-03-2017 дата публикации

MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING

Номер: US20170059669A1
Автор: Gottwald Matthias Georg, Kan Jimmy, Kang Seung Hyuk, Park Chando
Принадлежит:

A method and apparatus for testing a magnetic memory device is provided. The method begins when a magnetic field enhancing backing plate is installed in the test fixture. The magnetic field enhancing backing plate may be installed in the wafer chuck of a wafer testing probe station. The magnetic memory device is installed in the test fixture and a magnetic field is applied to the magnetic memory device. The magnetic field may be applied in-plane or perpendicular to the magnetic memory device. The performance of the magnetic memory device may be determined based on the magnetic field applied to the device. The apparatus includes a magnetic field enhancing backing plate adapted to fit a test fixture, possibly in the wafer chuck. The magnetic field enhancing backing plate is fabricated of high permeability magnetic materials, such as low carbon steel, with a thickness based on the magnetic field used in testing. 1. A method of testing a memory device , comprising:installing a magnetic field enhancing backing plate in a test fixture;installing a magnetic memory device in the test fixture;applying a magnetic field to the magnetic memory device; anddetermining performance of the magnetic memory device based on the applied magnetic field.2. The method of claim 1 , wherein the magnetic memory device is a wafer magnetic memory device.3. The method of claim 1 , wherein the magnetic field applied to the magnetic memory device is applied in-plane with the magnetic memory device.4. The method of claim 1 , wherein the magnetic field applied to the magnetic memory device is applied perpendicular to the magnetic memory device.5. The method of claim 1 , wherein the test fixture is a wafer test fixture.6. The method of claim 1 , wherein the magnetic field enhancing backing plate is applied near poles of a magnet in the test fixture.7. An apparatus for testing a memory device claim 1 , comprising:a magnetic field enhancing backing plate adapted to a test fixture; anda wafer test ...

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Номер записи: 115
22-05-2014 дата публикации

Electronic device for adjusting brightness of screen and method thereof

Номер: US20140139560A1
Автор: Eui-Chang JUNG, Eun-Jung Hyun, Hyuk Kang, Jeong-Min Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An operation method of an electronic device is provided. The operation method includes detecting a movement speed of contents being scrolled, if the detected movement speed is determined as being equal to or greater than a set speed, changing a brightness of a screen having been displayed at a first brightness, into a second brightness, and changing the brightness of the screen from the second brightness to the first brightness according to a changing movement speed of the contents being scrolled.

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Номер записи: 116
01-03-2018 дата публикации

High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array

Номер: US20180061467A1
Автор: Chando Park, Jimmy Jianan KAN, Peiyuan Wang, Seung Hyuk KANG, Sungryul KIM
Принадлежит: Qualcomm Inc

A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer may support the free layer. A driver may be operable to set a state of at least one of the bit cells using an increased spin-transfer torque (STT) current and a spin-hall effect from the spin-hall conductive material layer. The increased STT current may be driven through the spin-hall conductive material layer and the pMTJ so that a spin current is generated from the reference layer and the spin-hall conductive material layer.

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Номер записи: 117
20-02-2020 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20200058701A1
Автор: CHO Hyun Min, IM Hyun Deok, Kang Jong Hyuk, KIM Dae Hyun, LEE Joo Yeol
Принадлежит:

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer. 1. A light emitting device , comprising:a substrate;a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction;one or more walls disposed on the substrate, the one or more walls being spaced apart from the light emitting element;a first electrode adjacent the first end portion of the light emitting element;a second electrode adjacent the second end portion of the light emitting element;a first contact electrode directly connected to the first electrode and the first end portion of the light emitting element;an insulating layer having an opening exposing the second end portion of the light emitting element and the second electrode to an outside; anda second contact electrode connected to the second electrode and the second end portion of the light emitting element through the opening of the insulating layer.2. The light emitting device of claim 1 , wherein:any one of the first and second electrodes is on the one or more walls, and the first and second electrodes and ...

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Номер записи: 118
03-03-2016 дата публикации

METHOD FOR CONTROLLING AND AN ELECTRONIC DEVICE THEREOF

Номер: US20160066127A1
Автор: CHOI Jong-ho, HONG Duk-ki, JEON Seung-Young, Kang Hyuk, KIM Min-Ji, KIM Sang-Don, LIM Kyung-soo, YOO Jae-bong
Принадлежит:

A control method and an electronic device thereof are provided. A first electronic device can include a communication unit and a control unit configured to perform providing device identification information to a second electronic device based on a beacon received from the second electronic device through the communication unit, and conducting at least one function corresponding to the signal received from the second electronic device. 1. A first electronic device comprising:a communication unit; anda control unit configured to perform providing device identification information to a second electronic device based on a beacon received from the second electronic device through the communication unit, and conducting at least one function corresponding to a signal received from the second electronic device.2. The first electronic device of claim 1 , wherein the beacon received from the second electronic device comprises a vehicle application identifier.3. The first electronic device of claim 1 , wherein the control unit sends device identification information comprising at least one of a device identifier claim 1 , a vehicle identifier claim 1 , and a vehicle application setting value claim 1 , to the second electronic device.4. The first electronic device of claim 1 , wherein the control unit provides device identification information to the second electronic device based on the beacon received using a first communication method claim 1 , and receives the signal to conduct the at least one function corresponding to the device identification information from the second electronic device using a second communication method.5. The first electronic device of claim 1 , wherein claim 1 , the function comprises when measuring user body information based on at least one of a vehicle movement claim 1 , a movement of the first electronic device claim 1 , and a body motion according to the signal received from the second electronic device in response to the device identification ...

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Номер записи: 119
02-03-2017 дата публикации

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME

Номер: US20170062526A1
Автор: Kang Seung Hyuk, Li Xia, Lu Yu
Принадлежит:

A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device. 1. A method of fabrication of a device , the method comprising:forming a first electrode and a second electrode; andafter forming the first electrode and the second electrode, forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.2. The method of claim 1 , wherein the first electrode and the second electrode are formed concurrently using a non-conformal deposition process to deposit conductive material on sidewalls of recess of a dielectric material.3. The method of claim 1 , wherein a first interface of the resistive material and the first electrode and a second interface of the resistive material and the second electrode are substantially perpendicular to a surface of a substrate.4. The method of claim 1 , further comprising:forming a gate structure of an access transistor associated with the resistance-based storage element; andforming a dielectric material on the gate structure,wherein the first electrode, the second electrode, and the resistive material are formed on the dielectric material.5. The method of claim 4 , further comprising etching the dielectric material to create a recess claim 4 , and wherein the first electrode and the second electrode are formed on sidewalls of the recess.6. The method of claim 1 , further comprising performing an etch process to define a first etched region and a second etched region that are adjacent to the resistance-based storage element.7. The method of claim 6 , wherein the first electrode and the second electrode function as a mask during the etch process.8. The method of claim 6 , further comprising forming ...

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Номер записи: 120