Floating drilling platform for bridge construction

The utility model discloses a floating drilling platform for bridge construction, comprising a floating supporting platform, a plurality of temporary fixing devices for temporarily fixing the floating supporting platform and a hoisting system arranged on the floating supporting platform, wherein the floating supporting platform comprises a horizontal floating body, a horizontal supporting frame fixedly mounted on the horizontal floating body and a horizontal steel plate paved on the horizontal supporting frame; the horizontal floating body is composed of a plurality of buoyancy tanks assembled together; a lay-down through hole for laying a steel protecting canister for drilled pile construction down is formed on the horizontal steel plate; a lay-down channel for laying down the steel protecting canister down is correspondingly formed on the horizontal supporting frame and the horizontal floating body; and the lay-down channels are distributed right under the lay-down through hole. The floating ...

一种薄膜晶体管的制作方法

The invention forms a grid of a film transistor on a substrate surface. First, forming a grid insulating layer and a non-crystal silicon layer in turn, then dehydrogenating and converting the non-crystal silicon layer into a crystallizing silicon layer, then forming a doped semiconductor layer on the grid, and finally forming a source and a drain of the film transistor on the substrate surface, and forming a passivation layer on the substrate.

Organic electro photoluminescence device, and assembly method

Laser annealing device and its application

Method for manufacturing low temperature multicrystalline silicon thin film transistor

The method includes following steps: providing base plate, forming buffer layer on base plate, forming material with low surface free-energy on the buffer layer, and forming first amorphous silicon layer on the material with low surface free-energy; next, first amorphous silicon layer is meltened fully through method of laser tempering so that first liquid amorphous silicon layer forms even distributed several crystal seeds of polysilicon on material with low surface free-energy; then, forming second amorphous silicon layer on material with low surface free-energy in order to cover crystal seeds of polysilicon; finally, second amorphous silicon layer is meltened fully through method of laser tempering so that based on crystal seeds of polysilicon second liquid amorphous silicon layer forms polysilicon layer.

薄膜晶体管液晶显示器的多层次扩散障碍层结构和制作方法

In the present invention, impurity atom is catched by utilizing roughness which is increased by electric plasma processing and is placed between layers of multilayer diffusion obsticle layer structure or by utilizing impurity atom collection layer which is formed between two layers of the multilayer diffusion obsticle layer structure and is in low density and loose structure so that the impurity diffusion can be effectively blocked.

Laser annealing appts. and its tech

The laser annealing device includes a laser processing module, a resistance measuring module and a host circuit module. The laser-processing module provides a laser beam to an amorphous silicon thin film to make it recrystallize so as to form a polysilicon film. Resistance measuring module is suitable to measuring sheet resistor of polysilicon film. Based on the measured value of resistance, the host circuit module outputs relevant feedback signal to the laser processing module in order to adjust energy density of laser beam to optimum. The device raises quality of film prepared and annealing qualification rate.

镜片研磨方法

A method for grinding a lens which has an optical film and a surface to be ground includes such steps as putting the lens on a grinding pad, covering the lens by a fluid guiding pipe with fluid inlet and fluid outlet above said grinding pad, flowing a fluid along the normal direction of said optical film, and moving the grinding pad on the tangent direction of its surface.

多晶硅层的制作方法

The present invention discloses a method for making polycrystalline silicon layer which comprises, providing a substrate, forming a breaker having a plurality of ditches on the substrate, forming a non-crystalline silicon layer on the breaker, proceeding a laser annealing process to form a polycrystalline silicon. The invention can be applied into the production of low-temperature polycrystalline silicon thin film transistor LCDs.

Method for producing thin film transistor and its structure

The invention relates to a kid of thin film transistor prodn. method and the structure, the method of forming polysilicon layer of thin film transistor includes at least following steps: providing a base board with a insulating surface, forming an amorphous silicon layer on the insulating surface; providing an atmosphere to make amorphous silicon layer crystallizing thus to form a polysilicon layer, the amorphous consists of at least nitrogen and oxygen, and concentration range of oxygen is 50-50000 ppm.

有机电激发光元件结构制作方法及其固形保护层制作方法

The invention is a kind of manufacturing method of an organic electricity illuminating element, it includes following steps: (a) it provides a base material, on which there sets an organic electricity laser illuminating unit on the base material; (b) forms a protection layer on the base material to cover the organic electricity laser illuminating element; (c) provides an ion beam, and carries on surface process to the protection layer through the ion beam; and (d) forms a plastic layer on the protection layer in order to upgrade the reliability of the element. The invention also provides a kind of solid protection layer manufacturing method which can be realized through step (b) and step (d).

激光退火装置及其激光退火方法

The invention is a laser quenching device and the method. The device is suitable to carry on laser quenching to a noncrystal film; the noncrystal film is divided into the first region and the second region. The laser quenching device is mainly made up of a laser source model, a light splitting component, the first mantle and the second mantle. The laser source mode provides a laser beam; the splitting component splits the laser beam into the first beam and the second laser beam. The first mantle is arranged on the light path of the first laser beam and at front of the noncrystal silicon film. The second mantle is arranged on the light path of the second laser beam and at front of the noncrystal silicon. And, the first laser beam radiates the first region; the second laser beam is completed in the noncrystal silicon film of the first region and then radiates the second region after recrystlization.

多晶硅薄膜结晶品质的检测装置及其检测与控制方法

The present invention discloses one kind of polysilicon film crystallization quality detecting device and detection and control method. First, one first substrate covered with one first non-crystalline silicon layer is provided. Then, the first non-crystalline silicon layer is annealed with laser beam in different energy density to form several first polysilicon areas; light beam is split with one light splitter one first light beam and one second light beam for illuminating the first polysilicon areas. The intensity ratios between the first light beam and the reflected light beam of the second light beam are detected, and one second energy density is determined based on these intensity ratios. Finally, the second substrate covered with the second non-crystalline silicon layer is annealed with the laser with the second energy density to form the second polysilicon layer.

有机发光二极管的制造方法

The current invention opens a method of producing organic light-emitting diode, first provide a basal plate, on the basal plate several thin film transistor appearing array has been formed, and each thin film transistor includes a grid, a channel layer, a source electrode and a drain electrode. Then above the basal plate form a first insulation, after it covers the thin film transistor, on the first insulation form a second insulation, and form a opening that penetrates first insulation and second insulation, expose the drain electrode. Then form a anode layer that covers the second insulation and drain electrode. Finally according to the order above the basal plate form a emitting layer and a cathode layer.

Method for making polysilicon layer

激光能量自动控制系统与方法

The method includes providing a substrate; measuring value of hydrogen content in substrate; then evaluating whether the value of hydrogen content is less than a critical value of hydrogen content; if the value of hydrogen content is lager than the critical value of hydrogen content, then, a caution signal is sent out; if the value of hydrogen content is not lager than the critical value of hydrogen content, value of thickness of the substrate is measured. Moreover, a comparing table between each value of thickness of the substrate and each value of laser energy is built. Then, based on the said comparing table, a value of laser energy corresponding to a value of thickness of the substrate is evaluated. Finally, based on the value of laser energy, the corresponding value of laser energy is applied on the substrate. The invention also provides needed system for implementing the method.

Equipment and method for recovering tetramethylammonium hydroxide

The invention discloses equipment for recovering tetramethylammonium hydroxide (TMAH). The equipment comprises a waste liquor tank, a sodium filter system, a metal ion recovery resin tower, a tetramethylammonium hydroxide (Merry-Go-Round, MGP system) resin tower, a recovered treating water collecting tank, at least one sulfuric acid tetramethylammonium hydroxide [(TMA)2SO4] liquor collecting tank, an ion elimination resin tower for eliminating sulfate radicals (SO4<2->) or chloride ions (Cl<->), and a TMAH recovery tank in turn; a photoresist in waste water is removed by a sodium filtering mode, metal ions can be removed with an ion exchange resin, and the TMAH recovery tank recovers purified TMAH solution to recover and reutilize TMAH in the TMAH solution so as to reduce the environmental pollution caused by the TMAH.

形成多晶硅层的方法以及制造多晶硅薄膜晶体管的方法

The method includes following steps. First, an amorphous silicon layer is formed. Pretreatment is carried out for the said amorphous silicon layer to oxidize the surface of it to a silicon oxide layer, or azotize the surface to a silicon nitride layer. Then, the said amorphous silicon layer is crystallized to form a polycrystalline silicon layer. The thin film transistor made according to the invented method possesses lower threshold voltage and higher electron transfer.

激光结晶系统和控制准分子激光退火制程能量密度的方法

Laser crystallizing system includes a quasi molecule laser annealing device and an optical detection device. Energy density method for controlling annealing procedure of quasi molecule laser in real time includes a procedure of determining optimal energy density and an annealing procedure of quasi molecule laser. The former procedure decides optimal energy density, and the latter carries out an annealing procedure of quasi molecule laser by using optimal energy density decided.

Method and device for treating wastewater

The invention provides a method and a device for treating wastewater. The method is used for treating a kind of acid wastewater containing sulfuric acid and hydrogen peroxide. The method comprises the following steps of firstly adding an alkaline solvent into the acid wastewater to react with the sulfuric acid, thereby forming products comprising a sulphate and hydrogen peroxide, then utilizing a catalyst to removing the hydrogen peroxide in the products, and then dividing the products into wastewater of a low concentration and the sulphate so as to recover the sulphate. In addition, the invention also provides a device for treating wastewater. Products formed in a reaction tank are injected into a sedimentation and filtering tank, the hydrogen peroxide can be removed by reacting with the catalyst as passing through a filter, and particles containing the sulphate can be deposited at the bottom to be recovered.

激光退火装置及其应用

The laser-annealing device controls atmosphere in area irradiate by laser stably. The device possesses a cavity, an airflow guiding injection head inside cavity, a laser light source eradiating laser beam passing through the airflow guiding injection head, and a gas supply device connected to the airflow guiding injection head. Gas transported to place irradiated by laser beam carries off harmful gas generated.

Ammonia wastewater recycling method and apparatus

The invention provides an ammonia wastewater recycling method and an apparatus, wherein the recycling method comprises the procedures of adjusting ammonia wastewater into acidic wastewater; isolating high concentration wastewater from the acidic wastewater by using a reverse osmosis film; then, adding an alkaline solvent into the high concentration wastewater to obtain ammonia; and obtaining and recycling ammonium compounds by reaction between an acidic solvent and the ammonia. The invention also provides an ammonia wastewater recycling apparatus. The acidic wastewater is formed in a first pH value adjusting groove; then high concentration wastewater is isolated by using the reverse osmosis film; then the pH value of the high concentration wastewater is adjusted into alkaline in a second pH value adjusting groove to generate ammonia. Then, the ammonia reacts with the acidic solvent in a separating apparatus to obtain the ammonium compound. After that, the ammonium compound is recycled into ...