可促进电子迁移率提高的缓冲层及含该层的薄膜晶体管

The invented buffer layer includes an amorphous silicon layer (a-Si) on surface of substrate, and an oxide layer on the amorphous silicon layer (a-Si). The amorphous silicon layer with quite high density can block impurity in glass substrate diffusing into active layer of element in follow-up treatment. In follow-up laser annealing procedure of making amorphous silicon change to polysilicon, high thermal conductivity characters of amorphous silicon changes heat radiating state so as to raise evenness of crystal. Thus, electron mobility is promoted.

多晶硅薄膜结晶品质的检测装置及其检测与控制方法

The present invention discloses one kind of polysilicon film crystallization quality detecting device and detection and control method. First, one first substrate covered with one first non-crystalline silicon layer is provided. Then, the first non-crystalline silicon layer is annealed with laser beam in different energy density to form several first polysilicon areas; light beam is split with one light splitter one first light beam and one second light beam for illuminating the first polysilicon areas. The intensity ratios between the first light beam and the reflected light beam of the second light beam are detected, and one second energy density is determined based on these intensity ratios. Finally, the second substrate covered with the second non-crystalline silicon layer is annealed with the laser with the second energy density to form the second polysilicon layer.

LED control method and equipment

The invention discloses an LED control method and equipment. The LED control equipment comprises a PC (Personal Computer), a master controller and a plurality of branch controllers; the plurality of branch controllers are connected in series with the master controller; the PC is connected with the master controller; and the branch controllers are used for controlling LEDs. By applying the technical scheme, the plurality of branch controllers are connected in series with the master controller, when a branch controller is additionally provided, the branch controller is needed to match with an impedor of a device arranged at the front end of the branch controller, but not needed to match with impedors of all devices, therefore, the connection number of the branch controllers is increased, and the mounting distance of the LEDs is further increased.

Projection machine using two projection rays to increase image resolution

激光能量自动控制系统与方法

The method includes providing a substrate; measuring value of hydrogen content in substrate; then evaluating whether the value of hydrogen content is less than a critical value of hydrogen content; if the value of hydrogen content is lager than the critical value of hydrogen content, then, a caution signal is sent out; if the value of hydrogen content is not lager than the critical value of hydrogen content, value of thickness of the substrate is measured. Moreover, a comparing table between each value of thickness of the substrate and each value of laser energy is built. Then, based on the said comparing table, a value of laser energy corresponding to a value of thickness of the substrate is evaluated. Finally, based on the value of laser energy, the corresponding value of laser energy is applied on the substrate. The invention also provides needed system for implementing the method.

多晶硅薄膜的晶粒尺寸的控制及其检测方法

The invention discloses a polycrystalline silicon thin film crystal particle size control and detecting method comprising, providing a first substrate covered by a first non-crystalline silicon layer, implementing annealing treatment to the first non-crystalline silicon layer using laser rays of dissimilar energy density to form a plurality of first polycrystalline silicon areas, measuring the light spectrum change of each first polycrystalline silicon area with a finite photon energy range, providing a second substrate covered by a second non-crystalline silicon layer, implementing annealing treatment to the first non-crystalline silicon layer using the above laser energy density to obtain largest polycrystalline silicon crystal particle dimension, and detecting its crystal particle dimension using an elliptical instrument.

形成多晶硅层的方法以及制造多晶硅薄膜晶体管的方法

The method includes following steps. First, an amorphous silicon layer is formed. Pretreatment is carried out for the said amorphous silicon layer to oxidize the surface of it to a silicon oxide layer, or azotize the surface to a silicon nitride layer. Then, the said amorphous silicon layer is crystallized to form a polycrystalline silicon layer. The thin film transistor made according to the invented method possesses lower threshold voltage and higher electron transfer.