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Применить Всего найдено 9. Отображено 7.
10-02-2022 дата публикации

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Номер: US20220045098A1
Автор: CHENG Jiwei, Jin Lei, OUYANG Yingjie, PU Yueqiang, SU Rui, SUN Zhongwang, WANG Qiguang, XIA Zhiliang, ZHOU Wenxi
Принадлежит: Yangtze Memory Technologies Co., Ltd.

In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact. 1. A method for forming a semiconductor device , comprising:forming a channel structure that extends from a side of a substrate, the channel structure having sidewalls and a bottom region, the channel structure further including a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact; andforming a high-k layer over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.2. The method of claim 1 , further comprising:forming a plurality of word lines that are positioned over the substrate; andforming a plurality of insulating layers that are positioned over the substrate, the plurality of word lines and the plurality of insulating layers being alternatingly stacked so that the plurality of word lines are spaced apart from one another by the plurality of the insulating layers.3. The method of claim 2 , wherein the forming the channel structure comprises:forming a channel opening that extends through the plurality of word lines and the plurality of insulating layers, and further extends into the substrate, the channel opening having sidewalls and a bottom region to expose the substrate;forming the bottom channel contact at the bottom region of the channel opening, the bottom channel contact being formed along the sidewalls of the channel opening and further extending into the substrate;forming a blocking layer along the ...

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Номер записи: 1
04-03-2021 дата публикации

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Номер: US20210066335A1
Автор: CHENG Jiwei, Jin Lei, OUYANG Yingjie, PU Yueqiang, SU Rui, SUN Zhongwang, WANG Qiguang, XIA Zhiliang, ZHOU Wenxi
Принадлежит: Yangtze Memory Technologies Co., Ltd.

A semiconductor device is provided. The semiconductor device includes a channel structure that extends from a side of a substrate. The channel structure has sidewalls and a bottom region. The channel structure includes a bottom channel contact that is positioned at the bottom region, and a channel layer that is formed along the sidewalls and over the bottom channel contact. The channel structure further includes a high-k layer that is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact. 1. A semiconductor device , comprising:a channel structure that extends from a side of a substrate, the channel structure having sidewalls and a bottom region, the channel structure further including a bottom channel contact that is positioned at the bottom region, and a channel layer that is formed along the sidewalls and over the bottom channel contact; anda high-k layer that is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.2. The device of claim 1 , wherein the high-k layer comprises a first material that increases an initial threshold voltage (Uvvt) of the semiconductor device claim 1 , and a second material that reduces the initial threshold voltage of the semiconductor device.3. The device of claim 2 , wherein an increased thickness of the high-k layer results in a larger change of the initial threshold voltage of the semiconductor device.4. The device of claim 1 , wherein the channel structure further comprises:a blocking layer formed along the sidewalls of the channel structure and further covering a first portion of the bottom channel contact;a charge trapping layer formed over the blocking layer, the charge trapping layer having side portions positioned along the sidewalls of the channel structure and a bottom portion over the bottom channel contact; anda tunneling layer formed over the charge trapping layer, the tunneling layer having side portions ...

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Номер записи: 2
18-06-2020 дата публикации

Contact structures for three-dimensional memory device

Номер: US20200194447A1
Автор: Guangji Li, Jiwei CHENG, Kun Bao, Kun Zhang, Ming Hu, Shijin LUO, Zhiliang Xia, Zhongwang SUN
Принадлежит: Yangtze Memory Technologies Co Ltd

Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

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Номер записи: 3
26-08-2021 дата публикации

Contact structures for three-dimensional memory device

Номер: US20210265375A1
Автор: Guangji Li, Jiwei CHENG, Kun Bao, Kun Zhang, Ming Hu, Shijin LUO, Zhiliang Xia, Zhongwang SUN
Принадлежит: Yangtze Memory Technologies Co Ltd

Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

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Номер записи: 4
05-12-2023 дата публикации

3D NAND memory device and method of forming the same

Номер: US11839083B2
Автор: Jiwei CHENG, LEI Jin, Qiguang Wang, Rui Su, Wenxi Zhou, Yingjie OUYANG, Yueqiang PU, Zhiliang Xia, Zhongwang SUN
Принадлежит: Yangtze Memory Technologies Co Ltd

In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

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Номер записи: 5
20-02-2024 дата публикации

Contact structures for three-dimensional memory device

Номер: US11910599B2
Автор: Guangji Li, Jiwei CHENG, Kun Bao, Kun Zhang, Ming Hu, Shijin LUO, Zhiliang Xia, Zhongwang SUN
Принадлежит: Yangtze Memory Technologies Co Ltd

Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

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Номер записи: 6
23-03-2023 дата публикации

Contact structures for three-dimensional memory device

Номер: US20230086425A1
Автор: Guangji Li, Jiwei CHENG, Kun Bao, Kun Zhang, Ming Hu, Shijin LUO, Zhiliang Xia, Zhongwang SUN
Принадлежит: Yangtze Memory Technologies Co Ltd

Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

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Номер записи: 7