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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 13. Отображено 13.
17-08-2011 дата публикации

White LED integration module with adjustable color temperature and color rendering indexes

Номер: CN0102157507A
Автор: WEILING GUO, DESHENG CUI, BIFENG CUI, YING LIU, GUO WEILING, CUI DESHENG, CUI BIFENG, LIU YING
Принадлежит:

The invention relates to an encapsulation structure for a light-emitting diode (LED) integration module and a preparation process thereof. The encapsulation structure comprises a red LED chip 7, a blue LED chip 8, an LED support 1 with independent electrodes 3, 4 and 5, a ceramic substrate 6, fluorescent powder 10 and silica gel 11, wherein the red LED chip 7 and the blue LED chip 8 are fixed in the LED support; and the fluorescent powder 10 and the silica gel 11 are coated on the chips uniformly. In a white LED integration module with adjustable color temperatures and color rendering indexes, the light intensity of the red LED chip can be adjusted at any time under the environment of different color temperatures and color rendering indexes to change the color temperatures and the color rendering indexes without the usage of a plurality of independent LED integration modules with different color temperatures, so the design of lamps is simplified, the using amount of the fluorescent powder ...

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Номер записи: 1
14-04-2023 дата публикации

River sewage treatment device and treatment method

Номер: CN115961662A
Автор: JIANG ZHONGFENG, LIANG FENG, GAO HONGBIN, WU LI, CUI BIFENG, SONG FENGMING, ZHAO YINAN, ZHANG YUCHAN
Принадлежит:

The invention belongs to the technical field of riverway treatment, and particularly relates to a riverway sewage treatment device which comprises a floating plate, two rotating wheels wound with traction ropes are arranged at the top of the floating plate, the free end of each traction rope is connected with a ground anchor insertion rod, and a filter box for filtering river water and a collection box for collecting sludge are further arranged at the top of the floating plate. Four supporting rods are arranged at the top of the floating plate, and the top ends of the four supporting rods are fixedly connected with a solar cell panel; according to the method, sewage treatment can be carried out on the river channels with different widths, and compared with a traditional treatment method, the influence on the life of surrounding residents is small, the running investment is small, the treatment effect can be guaranteed, the treatment period is short, and the method is worthy of popularization ...

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Номер записи: 2
05-02-2014 дата публикации

Semi-conductor laser device capable of outputting double-wavelength laser for optical mixing to generate THz waves and manufacturing method

Номер: CN103560395A
Автор: CUI BIFENG, LING XIAOHAN, ZHANG SONG, WANG XIAOLING
Принадлежит:

The invention relates to a semi-conductor laser device capable of outputting double-wavelength laser for optical mixing to generate THz waves and a manufacturing method. The semi-conductor laser device comprises a semi-conductor laser device epitaxy structure formed by a substrate, a lower limiting layer I, a lower waveguide layer I, an active layer I, an upper waveguide layer I, an upper limiting layer I, a regenerating mechanism, a lower limiting layer II, a lower waveguide layer II, an active layer II, an upper waveguide layer II, current blocking layers, an upper limiting layer II and a P-type Ohm contact layer. The two current blocking layers are formed on the two sides of the longitudinal shaft of the semi-conductor laser device respectively in a wet oxidation method or a proton bombard method, and the current spreading effect of the active area II is effectively prohibited. The THz waves generated by optical mixing achieved through the double-length laser are easy to produce and ...

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Номер записи: 3
25-06-2014 дата публикации

Semiconductor laser heat sink with graphene layer and manufacturing method thereof

Номер: CN103887703A
Автор: LI GANG, ZHANG SONG, CUI BIFENG, XU XUHONG, ZHAO RUI, JI WEI
Принадлежит:

The invention relates to a semiconductor laser heat sink with a graphene layer. The semiconductor laser heat sink with the graphene layer comprises a base material layer, an oxygen-free copper layer and the graphene layer which sequentially deposit from bottom to top, wherein the base material layer is made of any one of aluminum nitride ceramics, aluminum oxide ceramics, zirconia ceramics, silicon nitride ceramics, silicon carbide and boron nitride. The invention further relates to a method for manufacturing the semiconductor laser heat sink. The graphene layer is adopted as heat dissipation materials of the heat sink, the physical property of high heat conductivity of graphene is fully used, the heat generated when a semiconductor laser works is conducted out and dissipated, under the condition of not increasing the weight and the size of the semiconductor laser, the heat dissipation capacity of the semiconductor laser is largely improved, the temperature of the semiconductor laser in ...

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Номер записи: 4
25-06-2014 дата публикации

Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof

Номер: CN103887704A
Автор: LI GANG, ZHANG SONG, CUI BIFENG, XU XUHONG, ZHAO RUI, JI WEI
Принадлежит:

The invention relates to a heat sink used for downward encapsulation of the p side of a semiconductor laser unit. The heat sink comprises a basis material layer, an upper metal layer and a lower metal layer, wherein the upper metal layer and the lower metal layer are grown on the upper surface of the basis material layer and on the lower surface of the basis material layer respectively, the upper metal layer is divided into a first positive electrode, a second positive electrode and a negative electrode which are independent of one another by insulation and isolation layers, the first positive electrode is used for providing electric signals needed by working of a ridged waveguide area of the semiconductor laser unit, the second positive electrode is used for providing electric signals needed by working of a conical gain area of the semiconductor laser unit, and the negative electrode is connected with the electrode on the n side of the semiconductor laser unit. By the adoption of the heat ...

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Номер записи: 5
15-10-2014 дата публикации

Semiconductor laser adopting P type metal electrode preparation solder

Номер: CN104104009A
Автор: CUI BIFENG, LIU MENGHAN, LING XIAOHAN, HE XIN
Принадлежит:

The invention relates to a semiconductor laser adopting P type metal electrode preparation solder and belongs to the semiconductor optoelectronic technical field. The objective of the invention is to solve problems of existence of gaps in a welding layer and instable welding which are caused by poor congruent melting of a semiconductor laser tube core and a heat sink when flip chip welding is performed. The semiconductor laser of the invention is characterized in that an Au-Sn solder layer is prepared on a P type metal electrode; the Au-Sn solder layer can be in two kinds of structures, wherein one structure is a Au and Sn layered structure, and the other structure is an Au-Sn alloy structure; and the mass ratio of Au and Sn in the two kinds of structures is 80:20. According to the semiconductor laser of the invention, welding quality can be improved, and the service life of the device can be prolonged, and long-term reliable work of the device can be benefitted.

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Номер записи: 6
19-03-2014 дата публикации

Semiconductor laser provided with asymmetric cavity surface non-injection zone window structure

Номер: CN103647216A
Автор: CUI BIFENG, ZHANG SONG, WANG XIAOLING, LING XIAOHAN
Принадлежит:

The invention brings forward a semiconductor laser provided with an asymmetric cavity surface non-injection zone window structure. The semiconductor laser comprises successively from the top to the bottom a substrate, a lower restriction layer, a lower waveguide layer, an active layer with a quantum well structure, an upper waveguide layer, an upper restriction layer and an Ohmic contact layer. The four edges of the Ohmic contact layer and the upper restriction layer are removed through corrosion; a ridge-type bench is formed at a central position of the Ohmic contact layer; the upper portion and the lower portion of the Ohmic contact layer are communicated; the upper portion and the lower portion of the upper restriction layer are not communicated; along the direction of a resonance cavity, the length L1 from a high reflective cavity surface to the edge of the ridge-type bench is greater than the length L2 from a light extraction cavity surface to the edge of the ridge-type bench; an electrical ...

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Номер записи: 7
05-03-2014 дата публикации

Liquid crystal flat television with external light source

Номер: CN103618862A
Автор: CUI BIFENG, MAO KE, XU HUI, HAN YONGGANG
Принадлежит:

The invention relates to a liquid crystal flat television with an external light source. The liquid crystal flat television comprises a light source device, a display device, a light transmission device, a light output port and a light input port. The light output port is formed in the light source device, the light source device is connected with a light inlet of the light transmission device through the light output port, the light input port is formed in the display device, and a light outlet of the light transmission device is connected with the display device through the light input port. According to the liquid crystal flat television with the external light source, the size of the flat television can be further reduced, the structure of the flat television is simplified, the maintaining cost is reduced, and the later upgrading space of the flat television is enlarged.

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Номер записи: 8
14-05-2014 дата публикации

Laser light bar, backlight module with same and display

Номер: CN103791288A
Автор: MAO KE, CUI BIFENG, XU HUI, HAN YONGGANG
Принадлежит:

The invention relates to a laser light bar, a backlight module with the same and a display. The laser light bar comprises a platy light bar substrate and a plurality of luminous modules. The luminous modules are arranged on the same surface of the light bar substrate, and luminous point arrays which are linearly arranged can be formed. The backlight module with the laser light bar comprises a light guide plate, at least one diffusion sheet, at least one brightness enhancement film, a reflecting plate and at least one laser light bar, or only comprises at least one diffusion sheet, at least one brightness enhancement film, a reflecting plate and at least one laser light bar. The display comprising the backlight module comprises a shell, a liquid crystal panel and the backlight module. The laser light bar, the backlight module and the display have the advantages that laser modules are used as luminous elements and are matched with the light guide plate and the diffusion sheets, so that a ...

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Номер записи: 9
15-06-2011 дата публикации

Sapphire substrate-based single chip white light emitting diode

Номер: CN0102097553A
Автор: WEILING GUO, WEIWEI YAN, BIFENG CUI, YING LIU, WEI GAO, GUO WEILING, YAN WEIWEI, CUI BIFENG, LIU YING, GAO WEI
Принадлежит:

The invention discloses a sapphire substrate-based single chip white light emitting diode (LED), and belongs to the technical field of semiconductor optoelectronics. The LED comprises an upper structure and a lower structure, wherein the upper structure consists of an upper p-type electrode, a blue light emitting unit, a tunnel junction, a green light emitting unit, an upper n-type electrode and a sapphire substrate, or consists of a blue-green light p electrode, a blue-green light emitting unit, a blue-green light n electrode and a sapphire substrate; the lower structure consists of a lower n-type electrode, a red light emitting unit and a lower p-type electrode; the upper structure and the lower structure are grown on two sides of the sapphire substrate respectively; and the manufacturing process does not need chip bonding, and a chip is welded on a heat dissipation pedestal made of silicon or other materials by adopting a flip chip bonding mode after scribing. Because of the introduction ...

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Номер записи: 10
17-11-2010 дата публикации

LED street lamp with adjustable light path and angle

Номер: CN0101886776A
Автор: WEILING GUO, TIANPING DING, BIFENG CUI, GUO WEILING, DING TIANPING, CUI BIFENG
Принадлежит:

The invention provides an LED street lamp with adjustable light path and angle. The LED street lamp comprises an LED light source and a heat dissipation system thereof; an LED light source module is fixed on a heat dissipation pedestal through a high heat-conducting material; serrated heat dissipation passages formed on the heat dissipation pedestal and the surface of the lamp can improve the heat dissipation property of the LED light source module and prolong the service life of an LED; and the heat dissipation pedestal is fixed in the lamp through a bracket. The included angle of the plane of the heat dissipation pedestal and the pavement can be adjusted by adjusting the bracket so as to fulfill the purposes of adjusting the luminous light path and angle and adjusting the illumination area of the pavement.

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Номер записи: 11
21-01-2015 дата публикации

Semiconductor laser unit cavity surface coating film control wafer and application

Номер: CN104300361A
Автор: CUI BIFENG, HE XIN, LING XIAOHAN, LIU MENGHAN
Принадлежит:

The invention provides a semiconductor laser unit cavity surface coating film control wafer and belongs to the technical field of semiconductor laser unit technologies. At present, coating film control wafers used at home and abroad are manufactured according to the size of a formal wafer, the semiconductor laser unit cavity surface coating film control wafer is single-sided I-shaped, and the other side of the control wafer is still the same as the formal wafer in size. The semiconductor laser unit cavity surface coating film control wafer is exquisite in design, easy to process, practical, simple and convenient to operate, separation difficulty brought by film layer adhesion after film coating is reduced, the damage degree of a semiconductor laser unit cavity surface film is reduced, and the reliability of a semiconductor laser unit is improved.

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Номер записи: 12
17-09-2014 дата публикации

Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof

Номер: CN104051960A
Автор: CUI BIFENG, JI WEI, CHEN JINGXIANG
Принадлежит:

The invention relates to an edge-emitting semiconductor laser device with a grating structure and a manufacturing method of the edge-emitting semiconductor laser device. The manufacturing method comprises the following steps that an N-type limiting layer, an N-type waveguide layer, a multiple quantum well active region, a P-type waveguide layer, a P-type limiting layer and a P-type ohmic contact layer are prepared on a gallium arsenide substrate in sequence; a ridge-shaped table top is formed in the upper surface of the P-type ohmic contact layer in a photoetching mode; silicon dioxide insulating layers are deposited on the P-type limiting layer and on the two sides of the P-type limiting layer; lead holes are formed in the upper surfaces of the silicon dioxide insulating layers in a photoetching mode, and the grating structure is arranged on the upper surface of a ridge-shaped structure in the middle of the ridge-shaped table top in a photoetching mode; an upper layer P-type electrode ...

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Номер записи: 13