Composite Grid Structure to Reduce Cross Talk in Back Side Illumination Image Sensors

A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided. 1. A semiconductor structure for back side illumination (BSI) pixel sensors , the semiconductor structure comprising:photodiodes arranged within a semiconductor substrate; a metal grid including first openings overlying the semiconductor substrate and corresponding to the photodiodes; and', 'a low refractive index (low-n) grid including second openings overlying the semiconductor substrate and corresponding to the photodiodes; and, 'a composite grid includingcolor filters arranged in the first and second openings and having a refractive index greater than a refractive index of the low-n grid, wherein upper surfaces of the color filters are offset relative to an upper surface of the composite grid.2. The semiconductor structure according to claim 1 , wherein the upper surfaces of the color filters overhang the upper surface of the composite grid.3. The semiconductor structure according to claim 1 , wherein the upper surfaces of the color filters are recessed relative to the upper surface of the composite grid.4. The semiconductor structure according to claim 1 , further including:an integrated circuit comprising the semiconductor substrate and a back-end-of-line (BEOL) ...

IMAGE SENSOR CHIP SIDEWALL INTERCONNECTION

An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided. 1. An integrated circuit (IC) chip comprising:a semiconductor substrate;a back-end-of-line (BEOL) metallization stack underlying the semiconductor substrate, wherein the BEOL metallization stack comprises an interlayer dielectric (ILD) layer, and further comprises metallization layers and a contact layer stacked in the ILD layer, wherein the metallization layers comprise a bond pad; anda conductive sidewall structure lining sidewalls respectively of the semiconductor substrate, the ILD layer, and the bond pad, wherein the sidewalls are substantially even, and wherein the conductive sidewall structure laterally contacts the bond pad and has a line-shaped profile.2. The IC chip according to claim 1 , further comprising:a device layer on an underside of the semiconductor substrate, between the semiconductor substrate and the BEOL metallization stack, wherein the device layer is electrically coupled to the bond pad through the contact layer.3. The IC chip according to claim 1 , further comprising:a second semiconductor substrate underlying the BEOL metallization stack, wherein the conductive sidewall structure lines a sidewall of the second semiconductor substrate that is even with the sidewalls respectively of the semiconductor substrate, the ILD layer, and the bond pad.4. The IC chip according to claim 3 , wherein the semiconductor substrate and the second semiconductor substrate contact the ILD layer.5. The IC chip according to claim 3 , wherein the ...

Image sensor chip sidewall interconnection

An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

Semiconductor device and method of forming the same

In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array.

Infrared image sensor

An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer.

COMPOSITE GRID STRUCTURE TO REDUCE CROSSTALK IN BACK SIDE ILLUMINATION IMAGE SENSORS

A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Composite grid structure to reduce crosstalk in back side illumination image sensors

A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Full-PDAF (phase detection autofocus) CMOS image sensor structures

The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the image sensor has first and second image sensing pixels arranged one next to another in a row. Each of the first and second image sensing pixels respectively have a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate. The right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels. The left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line.

Infrared image sensor

An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.

MICROLENS FOR A PHASE DETECTION AUTO FOCUS (PHAF) PIXEL OF A COMPOSITE GRID STRUCTURE

An image sensor for high angular response discrimination is provided. A plurality of pixels comprises a phase detection autofocus (PDAF) pixel and an image capture pixel. Pixel sensors of the pixels are arranged in a semiconductor substrate. A grid structure is arranged over the semiconductor substrate, laterally surrounding color filters of the pixels. Microlenses of the pixels are arranged over the grid structure, and comprise a PDAF microlens of the PDAF pixel and an image capture microlens of the image capture pixel. The PDAF microlens comprises a larger optical power than the image capture microlens, or comprises a location or shape so a PDAF receiving surface of the PDAF pixel has an asymmetric profile. A method for manufacturing the image sensor is also provided. 1. An image sensor comprising:a plurality of pixels comprising a phase detection autofocus (PDAF) pixel and an image capture pixel;pixel sensors of the pixels arranged in a semiconductor substrate, wherein the pixel sensors comprise a PDAF pixel sensor corresponding to the PDAF pixel;a grid structure arranged over the semiconductor substrate, laterally surrounding color filters of the pixels, wherein the grid structure comprises a metal grid structure and a dielectric grid structure overlying the metal grid structure, and wherein the metal and dielectric grid structures collectively define openings filled by the color filters; andmicrolenses of the pixels arranged over the grid structure, and comprising a PDAF microlens of the PDAF pixel and an image capture microlens of the image capture pixel;wherein the PDAF microlens comprises a larger optical power than the image capture microlens, or comprises a location or shape so a PDAF receiving surface of the PDAF pixel has an asymmetric profile.2. The image sensor according to claim 1 , wherein the PDAF microlens has an asymmetric profile.3. The image sensor according to claim 1 , wherein the color filters comprise a PDAF color filter overlying the PDAF ...

Image sensor with embedded infrared filter layer

An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Composite grid structure to reduce cross talk in back side illumination image sensors

A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid. 1. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a plurality of pixel sensors;an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other;a reflective grid disposed over the isolation grid on the back side of the substrate; anda low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a plan view,wherein a width of the low-n grid is greater than a width of the reflective grid.2. The BSI image sensor of claim 1 , further comprising a plurality of color filters disposed over the substrate on the back side.3. The BSI image sensor of claim 2 , wherein the low-n grid is disposed between and separating the color filters from each other.4. The BSI image sensor of claim 1 , wherein the reflective grid is disposed between the low-n grid and the isolation grid.5. The BSI image sensor of claim 1 , wherein the low-n grid comprises an insulating material.6. The BSI image sensor of claim 1 , wherein the isolation grid comprises at least an insulating material.7. The BSI image sensor of claim 1 , wherein the reflective grid comprises a conductive material.8. The BSI image sensor of claim 1 , wherein a depth of the isolation grid is equal to or less than a thickness of the substrate.9. The BSI image sensor of claim 1 , wherein the low-n grid is separated from the reflective grid.10. The BSI image sensor ...

BAND-PASS FILTER FOR STACKED SENSOR

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter. 1. An integrated chip structure , comprising:an image sensor disposed within a first substrate;a first band-pass filter disposed on the first substrate;a second band-pass filter disposed on the first substrate; anda dielectric structure disposed on the first substrate, wherein the dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.2. The integrated chip structure of claim 1 , wherein the first band-pass filter and the second band-pass filter have heights that are substantially equal to a height of the dielectric structure.3. The integrated chip structure of claim 1 , wherein the first band-pass filter comprises a plurality of different layers laterally contacting one another along vertically extending interfaces.4. The integrated chip structure of claim 1 , wherein the first band-pass filter comprises a plurality of different layers having bottommost surfaces that are substantially co-planar with a bottommost surface of the dielectric structure.5. The integrated chip structure of claim 1 , wherein a bottommost surface of the dielectric structure contacts the image sensor.6. The integrated chip structure of claim 1 , wherein the dielectric structure comprises silicon dioxide.7. An integrated chip structure claim 1 , comprising:an image sensor comprising a first substrate having a plurality of pixels;a plurality of band-pass filter layers ...

Narrow band filter with high transmission

Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

INFRARED IMAGE SENSOR

An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device. 1. An image sensor , comprising:a substrate;a plurality of visible light photosensitive devices disposed in the substrate;an infrared photosensitive device disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array;a plurality of color filters respectively disposed to cover the plurality of visible light photosensitive devices;an infrared band-pass filter disposed to cover the infrared photosensitive device;a micro-lens layer disposed on the plurality of color filters and the infrared band-pass filter;a light guide disposed between a portion of the micro-lens layer associated with the infrared photosensitive device and another portion of the micro-lens layer associated with the plurality of visible light photosensitive devices; andan infrared filter layer disposed to cover the plurality of visible light photosensitive device.2. The image sensor of claim 1 , wherein the infrared filter layer is disposed conformally on the micro-lens layer.3. The image sensor of claim 1 , ...

IMAGE SENSOR WITH EMBEDDED INFRARED FILTER LAYER

An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer. 17-. (canceled)8. An image sensor , comprising:a substrate;a plurality of photosensitive devices disposed in the substrate;an infrared color filter structure disposed to cover the photosensitive devices; anda micro-lens layer disposed on the infrared color filter structure.9. The image sensor of claim 8 , wherein the infrared color filter structure comprises:an infrared filter layer disposed over the substrate; anda color filter layer disposed on the infrared filter layer.10. The image sensor of claim 9 , wherein the infrared filter layer comprises an absorptive infrared filter structure.1112-. (canceled)13. The image sensor of claim 8 , further comprising an anti-reflective coating layer disposed between the substrate and the infrared color filter structure.14. A method for manufacturing an image sensor claim 8 , the method comprising:forming a plurality of photosensitive devices in a substrate;forming a color filter layer to cover the photosensitive devices;forming a micro-lens layer above the color filter layer; andforming an infrared filter layer above the substrate and adjacent to the color filter layer and/or the micro-lens layer.1517-. (canceled)18. The method of claim 14 , wherein the operation of forming the infrared filter layer is performed to form the infrared filter layer under the color filter layer.19. (canceled)20. The method of claim 14 , further comprising forming an anti-reflective coating layer on the substrate before the operation of forming the color filter layer to form the anti-reflective coating layer between the substrate and the color filter layer.21. The ...

Wave guide filter for semiconductor imaging devices

In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Infrared image sensor

An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer.

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure. 2. The BSI image sensor of claim 1 , wherein a width of the first reflective structure is less than a width of the isolation structure.3. The BSI image sensor of claim 1 , wherein the first reflective structure dot-like claim 1 , bar-like or frame-like.4. The BSI image sensor of claim 1 , wherein the first reflective structure comprises a plurality of first conductive contacts and a first conductor claim 1 , and the first conductive contacts are disposed between the first conductor and isolation structure.5. The BSI image sensor of claim 4 , wherein a width of the first conductive contacts is less than a width of the first conductor.6. The BSI image sensor of claim 4 , wherein the first conductive contacts contact the isolation structure.7. The BSI image sensor of claim 1 , wherein the first reflective structures are electrically isolated from the second reflective structure.8. The BSI image sensor of claim 7 , wherein the second reflective structure is electrically grounded.9. The BSI image sensor of claim 1 , wherein the interconnection structure further comprises a plurality of second conductive contacts and a plurality of second conductive features.11. The BSI image sensor of claim 10 , wherein the pixel sensor is disposed to receive light with a wavelength.12. The BSI image sensor of claim 11 , wherein the bar-like conductive structures are spaced apart from each other by the dielectric layer claim 11 , and a spacing distance between the conductive structures is less than a half of the wavelength.13. The BSI image sensor of ...

Semiconductor image sensor

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, and a plurality of pixel sensors arranged in an array. Each of the pixel sensors includes a photo-sensing device in the substrate, a color filter over the pixel sensor on the back side, and an optical structure over the color filter on the back side. The optical structure includes a first sidewall, and the first sidewall and a plane substantially parallel with a front surface of the substrate form an included angel greater than 0°.

Semiconductor image sensor

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

WAFER LEVEL IMAGE SENSOR PACKAGE

An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure. 1. An image sensor package , comprising:a package substrate;an image sensor chip arranged over the package substrate,a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer; andan on-wafer shield structure spaced around a periphery of the image sensor chip and having a sidewall directly contact the protection layer.2. The image sensor package according to claim 1 , wherein the protection layer has a top surface aligned with that of the on-wafer shield structure.3. The image sensor package according to claim 1 , further comprising:an on-wafer lens having a convex top surface and arranged above the image sensor chip and under the protection layer.4. The image sensor package according to claim 3 , wherein the on-wafer lens has a sidewall that directly contacts that of the on-wafer shield structure.5. The image sensor package according to claim 3 , further comprising:an on-wafer filtering coating arranged above the image sensor chip and under the on-wafer lens;wherein the on-wafer filtering coating is ...

WAVE GUIDE FILTER FOR SEMICONDUCTOR IMAGING DEVICES

In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index. 1. An image sensor , comprising:a photodetector disposed in a semiconductor substrate; and the light filter comprises a first material that is translucent and has a first refractive index; and', 'the light filter grid structure comprise a second material that is translucent and has a second refractive index less than the first refractive index., 'a wave guide filter having a substantially planar upper surface disposed over the photodetector, the wave guide filter comprising a light filter disposed in a light filter grid structure, wherein2. The image sensor of claim 1 , wherein the first refractive index squared minus the second refractive index squared is greater than about 0.25.3. The image sensor of claim 1 , wherein the wave guide filter comprises:an anti-reflective coating (ARC) disposed over both the light filter and the light filter grid structure, the ARC having a substantially planar upper surface.4. The image sensor of claim 3 , wherein the wave guide filter comprises:an interface layer having a substantially planar upper surface disposed on both the light filter and the light filter grid structure, wherein the ARC is disposed on the substantially planar upper surface of the interface layer, and wherein the interface layer has a first height over the light filter and a second height different than the first height over the light filter grid structure.5. The image sensor of claim 1 , wherein the wave ...

IMAGE SENSOR WITH IMPROVED NEAR-INFRARED (NIR) RADIATION PHASE-DETECTION AUTOFOCUS (PDAF) PERFORMANCE

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector. 1. An integrated chip (IC) , comprising:a first phase detection autofocus (PDAF) photodetector disposed in a first PDAF pixel region of a semiconductor substrate;a second PDAF photodetector disposed in a second PDAF pixel region of the semiconductor substrate, wherein the second PDAF photodetector is laterally spaced from the first PDAF photodetector;a first micro-lens disposed over the semiconductor substrate and the first PDAF photodetector, wherein the first micro-lens is configured to focus incident electromagnetic radiation (EMR) toward the first PDAF photodetector;a second micro-lens disposed over the semiconductor substrate and the second PDAF photodetector, wherein the second micro-lens is configured to focus incident EMR toward the second PDAF photodetector;a first EMR diffuser disposed along a side of the semiconductor substrate and laterally between opposite sides of the first PDAF photodetector; anda second EMR diffuser disposed along the side of the semiconductor substrate and laterally between opposite sides of the second PDAF photodetector, and wherein a midline of ...

BAND-PASS FILTER FOR STACKED SENSOR

In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths. 1. A three-dimensional integrated chip , comprising:a first integrated chip (IC) die having a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths;a second IC die having a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths; anda first band-pass filter arranged between the first IC die and the second IC die and configured to reflect electromagnetic radiation that is within the first range of wavelengths; anda waveguide arranged over the first IC die, the waveguide having a bottom surface facing the first IC die and a top surface facing away from the first IC die, the bottom surface having a smaller width than the top surface.2. The integrated chip of claim 1 , further comprising:a second band-pass filter separated from the first IC die by the second IC die, wherein the second band-pass filter is configured to reflect electromagnetic radiation that is within the second range of wavelengths.3. The integrated chip of claim 1 , wherein the first band-pass filter comprises:a first layer of material having a ...

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid. 1. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a plurality of pixel sensors arranged in an array,an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other;a reflective grid disposed over the isolation grid on the back side of the substrate, and a depth of the reflective grid being less than a depth of the isolation grid; anda low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a plan view,wherein a width of the low-n grid is greater than a width of the reflective grid.2. The BSI image sensor of claim 1 , further comprising a plurality of color filters disposed over the substrate on the back side.3. The BSI image sensor of claim 2 , wherein the low-n grid is disposed between and separating the color filters from each other.4. The BSI image sensor of claim 1 , wherein the reflective grid is disposed between the low-n grid and the isolation grid.5. The BSI image sensor of claim 1 , wherein the low-n grid comprises an insulating material.6. The BSI image sensor of claim 1 , wherein the isolation grid comprises at least an insulating material.7. The BSI image sensor of claim 1 , wherein the reflective grid comprises a conductive material.8. The BSI image sensor of claim 1 , wherein the ...

Semiconductor image sensor

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over the isolation grid on the back side of the substrate. A depth of the reflective grid is less than a depth of the isolation grid. 1. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a plurality of pixel sensors arranged in an array,an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other; anda reflective grid disposed over the isolation grid on the back side of the substrate, and a depth of the reflective grid being less than a depth of the isolation grid.2. The BSI image sensor of claim 1 , further comprising a plurality of color filters disposed over the substrate on the back side.3. The BSI image sensor of claim 2 , further comprising a low-n grid disposed between and separating the color filters from each other.4. The BSI image sensor of claim 3 , wherein the reflective grid is disposed between the low-n grid and the isolation grid.5. The BSI image sensor of claim 3 , wherein the low-n grid comprises an insulating material.6. The BSI image sensor of claim 3 , wherein the low-n grid overlaps the reflective grid from a plan view.7. The BSI image sensor of claim 1 , wherein the isolation grid comprises at least an insulating material.8. The BSI image sensor of Claim I claim 1 , wherein the reflective grid comprises a conductive material.9. The BSI image sensor of claim 1 , wherein the depth of the isolation grid is substantially equal to or less than a thickness of the substrate.10. A back side illumination (BSI) image sensor comprising:a substrate;a pixel sensor; and a conductive structure; and', 'a dielectric layer covering at least ...

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure. 1. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a pixel sensor in the substrate;an isolation structure surrounding the pixel sensor in the substrate;a dielectric layer over the pixel sensor on the front side of the substrate; anda plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.2. The BSI image sensor of claim 1 , wherein the pixel sensor is disposed to receive light with a predetermined wavelength.3. The BSI image sensor of claim 2 , wherein the conductive structures are spaced apart from each other by the dielectric layer claim 2 , and a spacing distance between the conductive structures is less than a half of the predetermined wavelength.4. The BSI image sensor of claim 3 , wherein the spacing distance is less than 0.5 micrometers (μm).5. The BSI image sensor of claim 3 , wherein each of the conductive structures comprises a diameter claim 3 , and the diameter is between about 0.05 μm and about 0.2 μm.6. The BSI image sensor of claim 3 , wherein each of the conductive structures comprises a bar-like structure spaced apart from each other by the dielectric layer.7. The BSI image sensor of claim 1 , wherein the conductive structures are contact with each other to form a frame-like structure in the dielectric layer.8. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a pixel sensor in the ...

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate. 2. The BSI image sensor of claim 1 , wherein a sidewall of micro structure and a substrate-horizontal direction comprise at least an included angle claim 1 , and the included angle is between about 48° and about 58°.3. The BSI image sensor of claim 1 , wherein a height of the micro structures is between about 0.2 micrometers (μm) and about 0.7 μm.4. The BSI image sensor of claim 1 , wherein a width of the micro structures is between about 0.3 μm and about 0.6 μm.5. The BSI image sensor of claim 1 , wherein the micro structures are spaced apart from each other.6. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a pixel sensor disposed in the substrate, and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; anda color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate.7. The BSI image sensor of claim 6 , wherein a sidewall of the first micro structure and a substrate-horizontal direction comprise at least a first included angle claim 6 , and the first included angle is between about 48° and about 58°.8. The BSI image sensor of claim 6 , wherein a height of the first micro structures is between about 0.2 μm and about 0.7 μm.9. The BSI image sensor of claim 6 , wherein a width of the first micros structures is between about 0.3 μm and about 0.6 μm.10. The BSI image sensor of claim 6 , wherein the first micro ...

Image sensor with improved near-infrared (nir) radiation phase-detection autofocus (pdaf) performance

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.

IMAGE SENSOR CHIP SIDEWALL INTERCONNECTION

An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided. 1. An image sensor chip comprising:a substrate supporting an integrated circuit (IC) configured to sense incident light; anda sidewall interconnect structure arranged along a sidewall of the substrate and electrically coupled with the IC.2. The image sensor chip according to claim 1 , further including:a through silicon via (TSV) extending through the substrate to the IC and configured to electrically couple the sidewall interconnect structure to the IC.3. The image sensor chip according to claim 2 , further including:a conductive layer arranged below the substrate and configured to electrically connect the TSV and the sidewall interconnect structure.46-. (canceled)7. The image sensor chip according to claim 1 , further including:a back-end-of-line (BEOL) metallization stack arranged over the substrate; anda device layer arranged over the substrate and electrically coupled to the sidewall interconnect structure through the BEOL metallization stack.8. The image sensor chip according to claim 7 , further including:a second substrate arranged over the BEOL metallization stack, wherein the device layer is arranged between the second substrate and the BEOL metallization stack.919-. (canceled)20. An image sensor package comprising:a package substrate having a package bond pad;an image sensor chip arranged over the package substrate, the image sensor chip including an integrated circuit (IC) electrically coupled with a sidewall interconnect structure arranged ...

IMAGE SENSOR WITH SCATTERING STRUCTURE

The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure. 1. An integrated chip , comprising:a substrate;a pixel comprising a photodetector, the photodetector disposed in the substrate; anda first inner trench isolation structure and an outer trench isolation structure that extend into the substrate, wherein the first inner trench isolation structure laterally surrounds the photodetector in a first closed loop, wherein the outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure; anda scattering structure defined, at least in part, by the first inner trench isolation structure and configured to increase an angle at which radiation impinges on the outer trench isolation structure.2. The integrated chip of claim 1 , further comprising:a second inner trench isolation structure that laterally surrounds the first inner trench isolation structure along a third closed path and that is laterally surrounded by the outer trench isolation structure, wherein the second inner trench ...

Concealable breast pumping device

A concealable breast pumping device is provided, including a primary unit, a squeezing unit, a milk collection bag, a stop valve unit, and a driving unit. The primary unit includes a channel, a protruding portion, and a concave portion. The protruding portion has a port. The port communicates with the channel. The inner wall of the concave portion has a spiral convex portion. The squeezing unit is covered on one end of the primary unit. One end of the milk collection bag is connected to the protruding portion, and the other end has an opening. The opening is gripped by a gripping tool. The stop valve unit is positioned in the milk collection bag. One end of the stop valve unit is connected to the protruding portion. The other end has a gap, and the gap is able to opened and closed movably.

Narrow band filter with high transmission

Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

NARROW BAND FILTER WITH HIGH TRANSMISSION

Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures. 1. A method for forming an image sensor , the method comprising:forming a photodetector in a substrate;depositing a first multilayer film on the substrate, wherein the first multilayer film comprises a plurality of first layers and a plurality of second layers, wherein the first layers are alternatingly stacked with the second layers and share a first refractive index that is different than a second refractive index shared by the second layers;depositing a defect layer on the first multilayer film; andperforming an etch into the defect layer to form a plurality of columnar cavities overlying the photodetector, wherein the columnar cavities are in a periodic pattern.2. The method according to claim 1 , further comprising:forming a plurality of columnar structures in the columnar cavities, wherein the columnar structures are formed with a refractive index different than a refractive index of the defect layer.3. The method according to claim 2 , wherein the refractive index of the defect layer is different than the first and second refractive indexes.4. The method according to claim 1 , wherein the defect layer comprises the same material and the ...

Narrow band filter with high transmission

Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial. 1. A back side illumination (BSI) image sensor comprising:a substrate comprising a front side and a back side opposite to the front side;a pixel sensor disposed in the substrate; and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; anda color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate,wherein the first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.2. The BSI image sensor of claim 1 , wherein the first axial and the second axial are aligned with each other.3. The BSI image sensor of claim 1 , wherein a sidewall of at least one of the first micro structures and a substrate-horizontal direction comprise at least a first included angle claim 1 , and a sidewall of at least one of the second micro structures and the substrate-horizontal direction comprise at least a second included angle.4. The BSI image sensor of claim 3 , wherein the first included angle and the second included angle are different from each other.5. The BSI image sensor of claim 3 , wherein the first included angle and the second included angle are the same.6. The BSI image sensor of claim 3 , wherein a sidewall of another one of the first micro structures and the substrate- ...

IMAGE SENSOR WITH EMBEDDED INFRARED FILTER LAYER

An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer. 1. An image sensor , comprising:a substrate;a plurality of photosensitive devices disposed in the substrate;a color filter layer disposed to cover the photosensitive devices;a micro-lens layer disposed on the color filter layer; andan infrared filter layer directly covering the micro-lens layer, wherein a refractive index of the micro-lens layer is equal to a square root of a product of the refractive index of the infrared filter layer and a refractive index of the color filter layer.2. The image sensor of claim 1 , wherein the infrared filter layer has a top surface profile which is the same as a top surface profile of the micro-lens layer.3. The image sensor of claim 1 , wherein the infrared filter layer has a flat top surface profile.4. The image sensor of claim 1 , further comprising an anti-reflective coating layer disposed between the substrate and the color filter layer.5. The image sensor of claim 1 , wherein the infrared filter layer comprises a reflective infrared filter structure.6. The image sensor of claim 5 , wherein the reflective infrared filter structure is a multi-film stacked structure.7. The image sensor of claim 6 , wherein the multi-film stacked structure comprises a plurality of films claim 6 , and the films of the multi-film stacked structure have different refractive indexes in an infrared region.8. An image sensor claim 6 , comprising:a substrate;a plurality of photosensitive devices disposed in the substrate;an infrared color filter structure disposed to cover the photosensitive devices, wherein the infrared color filter structure comprises a color filter ...

Band-pass filter for stacked sensor

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.

Image Sensor and Image Processing Method Using The Same

An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals. 1. An image sensor , comprising: at least one first yellow filter configured to transmit a green component and a red component of incident light;', 'at least one green filter configured to transmit the green component of the incident light; and', 'at least one blue filter configured to transmit a blue component of the incident light, wherein each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light; and, 'a color filter array, comprising a plurality of repeating unit cells, wherein at least one of the unit cells comprisesa light receiving element configured to convert the incident light transmitted by the color filter array into electric signals.2. The image sensor of claim 1 , wherein the light receiving element comprises:at least one yellow photosensitive element configured to convert the green component and the red component of the incident light transmitted by the first yellow filter into a yellow electric signal;at least one green photosensitive element configured to convert the green component of the incident light transmitted by the green filter into a green electric signal; andat least one blue photosensitive element configured to ...

FULL-PDAF (PHASE DETECTION AUTOFOCUS) CMOS IMAGE SENSOR STRUCTURES

The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the image sensor has first and second image sensing pixels arranged one next to another in a row. Each of the first and second image sensing pixels respectively have a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate. The right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels. The left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line. 1. A CMOS image sensor pixel array , comprising:first and second image sensing pixels arranged one next to another in a row, each of the first and second image sensing pixels respectively comprising a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate;wherein the right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels;wherein the left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line;wherein the right transfer gate of the first image sensing pixel and the left transfer gate of the second image sensing pixel are operably coupled to a common floating node region.2. The CMOS image sensor pixel array of claim 1 , wherein a first separating line between the left PD pixel and the right PD pixel of the first image sensing pixel extends in a first ...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array. 1. An image sensor , comprising:a substrate including a body with a first surface and an opposite second surface, wherein a through via is configured to extend from the first surface to the second surface;an intermediate layer over the body and covering the through via;an image sensing device adhered to the intermediate layer through an adhesive material of the intermediate layer; anda lens structure over the substrate, the intermediate layer and the image sensing device,wherein the image sensing device is curved.2. The image sensor according to claim 1 , wherein the image sensing device comprises a semiconductor chip comprising a CMOS image sensing array.3. The image sensor according to claim 1 , wherein the intermediate layer comprises deformable material.4. The image sensor according to claim 1 , wherein the intermediate layer comprises the adhesive material.5. The image sensor according to claim 1 , wherein a vacuum is generated at the through via between the intermediate layer and the second surface of the body of the substrate.6. The image sensor according to claim 1 , wherein a vacuum is generated at a compartment surrounded by the lens structure and the substrate.7. The image sensor according to claim 1 , wherein the ...

Image sensor

An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

SEMICONDUCTOR IMAGE SENSOR

In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches. 1. An image sensor integrated chip , comprising:an image sensing element arranged within a substrate;a first dielectric disposed in one or more trenches within a first side of the substrate, wherein the one or more trenches laterally surround the image sensing element; andwherein the substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element, the second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.2. The integrated chip of claim 1 , wherein a planar surface of the substrate continuously extends between a first end directly coupled to a first one of first sidewalls defining the one or more trenches and a second end directly coupled to a first one of the second sidewalls.3. The integrated chip of claim 1 , further comprising:a reflector disposed over the first side of the substrate and having a lower surface facing the substrate, wherein the lower surface laterally extends past opposing ends of a planar region of the first side of the substrate.4. The integrated chip of claim 3 , further comprising:a metallic grid disposed within a dielectric material along the first side of ...

Wavelength tunable narrow band filter

Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION

Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure. 1. A CMOS image sensor , comprising:a substrate having a front-side and a back-side opposite to the front-side;a plurality of pixel regions comprising a plurality of photodiodes, respectively, configured to receive radiation that enters the substrate from the back-side;a boundary deep trench isolation (BDTI) structure disposed at boundary regions of the pixel regions and including a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode, the BDTI structure comprising a first material; anda pixel deep trench isolation (PDTI) structure disposed within the BDTI structure and overlying the photodiode, wherein the PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.2. The CMOS image sensor of claim 1 , wherein the first material of the BDTI structure ...

Semiconductor image sensor

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.

Bridge structural safety monitoring system and method thereof

The present invention discloses a bridge structural safety monitoring system and a bridge structural safety monitoring method. The method includes the steps of capturing an image of a monitoring area of a bridge to create a standard image of the bridge operated at normal conditions, capturing images of the monitoring area of the bridge continuously to obtain monitoring images, comparing the standard image with the monitoring image to obtain a displacement correlation coefficient of the monitoring area of the bridge, and transmitting the displacement correlation coefficient to a central console, such that the central console can determine the using condition of the bridge according to the displacement correlation coefficient.

Trench isolation structure for image sensors

Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

Cooling system for hinged portable computing device

A cooling system for a hinged portable computing device is provided having a first passive heat transfer device is carried within a first housing portion of the computer and a second passive heat transfer device that is carried within a second housing portion of the portable computer. A hinge structure interconnects the first and second housing portions for pivotal movement relative to one another, where the hinge structure includes a heat conductive first gudgeon having a pintle and a thermal interface block. The thermal interface block is disposed in the second housing portion and connected in thermal communication with the second first passive heat transfer device. A heat conductive second gudgeon is also provided having a journal and a thermal interface block. The thermal interface block of the second gudgeon is connected in thermal communication with the first passive heat transfer device, and the pintle is rotatably received within the journal so as to be in heat exchange relationship with the second gudgeon, thereby forming an integral portion of the hinge structure. In one embodiment, a third passive heat transfer device is also employed within the first housing portion of the computer.

Safety Monitoring System and Method of Bridge Structure

Chip defects inspecting device and inspecting method thereof

Image sensor chip sidewall interconnection

An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

Semiconductor image sensor

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.

Wafer level image sensor package

An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

Reduced cross-talk in color and infrared image sensor

Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

Enhanced design for image sensing technology

The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Wave guide filter for semiconductor imaging devices

In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

ステルス搾乳装置

【課題】小型で、パーツが少なくて分解が容易であり、清潔で衛生的なステルス搾乳装置を提供する。【解決手段】ステルス搾乳装置１００は主体ユニット１１０と、押圧ユニット１２０と、集乳袋１３０と、バルブユニット１４０と、駆動ユニットとを備える。主体ユニットは通路１１１と、突出部と、凹部とを備える。押圧ユニットは主体ユニットの一端に嵌装する。集乳袋の一端は突出部に接続し、他端は開口を有し、開口は固定具によって固定される。バルブユニットは集乳袋内にあり、バルブユニットの一端は突出部に接続し、他端は隙間を有する。バルブユニットは流路１４１を有し、流路の一端は通孔に連通し、他端は隙間に連通する。駆動ユニットは係合部及び制御部を備え、係合部は制御部と連通し、係合部は主体ユニットと接続し、制御部は外部装置と接続する。【選択図】図１

Optical structure and method for manufacturing the same

An optical structure and methods of forming an optical structure are provided. In some embodiments, the optical structure includes a substrate having a frontside and a backside opposite the frontside, a plurality of image-sensing elements arranged within the substrate, and a deep trench isolation (DTI) structure disposed between adjacent image-sensing elements. The DTI structure extends from the backside of the substrate to a first depth within the substrate and laterally surrounds the plurality of image-sensing elements. The optical structure further includes a light transmission layer formed over the backside of the substrate. The light transmission layer includes a first side and a second side adjacent to the backside of the substrate. The optical structure further includes a buried grid structure in the light transmission layer, the buried grid structure extending from the first side of the light transmission layer to a second depth within the light transmission layer.

Wafer level image sensor package

A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Trench isolation structure for scaled pixel region

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Wave guide filter for semiconductor imaging devices

In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Reduced cross-talk in color and infrared image sensor

Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

Semiconductor image sensor

In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Trench isolation structure for image sensors

Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

Enhanced design for image sensing technology

The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Band-pass filter for stacked sensor

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

Halbleiter-bildsensor

Ein rückseitig beleuchteter Bildsensor (BSI-Bildsensor) weist ein Substrat mit einer Vorderseite und einer Rückseite, die der Vorderseite gegenüberliegt, und eine Mehrzahl von Pixelsensoren auf, die in einer Matrix angeordnet sind. Die Pixelsensoren weisen jeweils Folgendes auf: ein Lichtabtastelement in dem Substrat; ein Farbfilter über dem Pixelsensor auf der Rückseite; und eine optische Struktur über dem Farbfilter auf der Rückseite. Die optische Struktur weist eine erste Seitenwand auf, wobei die erste Seitenwand und eine Ebene, die im Wesentlichen parallel zu einer Vorderseite des Substrats ist, einen eingeschlossenen Winkel bilden, der größer als 0° ist.

Waferebene-bildsensor-package

Bildsensor-Package (100, 300, 400) mit:einem Package-Substrat (106);einem Bildsensorchip (102, 200, 302), der über dem Package-Substrat (106) angeordnet ist;einer über dem Bildsensorchip (102, 200, 302) befindlichen Auf-dem-Wafer-Schutzschicht (110), die eine planare Oberseite und eine Unterseite hat, die Strukturen unter der Auf-dem-Wafer-Schutzschicht (110) bedeckt und kontaktiert, wobei die Auf-dem-Wafer-Schutzschicht (110) auf Waferebene hergestellt ist, bevor der Wafer in diskrete Bildsensorchips getrennt wird; undeiner Auf-dem-Wafer-Abschirmstruktur (104), die mit einem Abstand um eine Peripherie des Bildsensorchips (102, 200, 302) auf dem Package-Substrat (106) und entlang Seitenwänden des Bildsensorchips (102, 200, 302) angeordnet ist und eine Seitenwand hat, die die Auf-dem-Wafer-Schutzschicht (110) direkt kontaktiert, wobei auf dem Bildsensorchip (102, 200, 302) kein Deckglas angeordnet ist.

Trench isolation structure for image sensors

Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

Image sensor

The present disclosure describes a three-chip complementary metal-oxide-semiconductor (CMOS) image sensor and a method for forming the image sensor. The image sensor a first chip including a plurality of image sensing elements, transfer transistors and diffusion wells corresponding to the plurality of image sensing elements, a ground node shared by the plurality of image sensing elements, and deep trench isolation (DTI) structures extending from the shared ground node and between adjacent image sensing elements of the plurality of image sensing elements. The image sensor further includes a second chip bonded to the first chip and including a source follower, a reset transistor, a row select transistor, and an in-pixel circuit, where the source follower is electrically coupled to the diffusion wells. The image sensor further includes a third chip bonded to the second chip and including an application-specific circuit, where the application-specific circuit is electrically coupled to the in-pixel circuit.

Schmalbandfilter mit hoher Durchlässigkeit

Verschiedene Ausführungsformen der vorliegenden Anmeldung sind auf ein Schmalbandfilter mit hoher Durchlässigkeit und einen das Schmalbandfilter umfassenden Bildsensor gerichtet. In einigen Ausführungsformen umfasst das Filter einen ersten Bragg-Spiegel (DBR), einen zweiten DBR, eine Defektschicht zwischen dem ersten und dem zweiten DBR und eine Mehrzahl von Säulenstrukturen. Die Säulenstrukturen erstrecken sich durch die Defektschicht und weisen einen Brechungsindex auf, der sich von einem Brechungsindex der Defektschicht unterscheidet. Der erste und der zweite DBR definieren ein geringdurchlässiges Band, und die Defektschicht definiert ein hochdurchlässiges Band, welches das geringdurchlässige Band teilt. Abhängig von einem Brechungsindex der Säulenstrukturen und einem Füllfaktor der Säulenstrukturen verschieben die Säulenstrukturen das hochdurchlässige Band in Richtung niedrigerer oder höherer Wellenlängen.

Shifted micro-lenses for increased imaging device performance

Various embodiments of the present disclosure are directed towards an imaging device including a first image sensor element and a second image sensor element respectively comprising a pixel unit disposed within a semiconductor substrate. The first image sensor element is adjacent to the second image sensor element. A first micro-lens overlies the first image sensor element and is laterally shifted from a center of the pixel unit of the first image sensor element by a first lens shift amount. A second micro-lens overlies the second image sensor element and is laterally shifted from a center of the pixel unit of the second image sensor element by a second lens shift amount different from the first lens shift amount.

Verschobene mikrolinsen für höhere bildgebungsvorrichtungsleistung

Verschiedene Ausführungsformen der vorliegenden Offenbarung sind auf eine Bildgebungsvorrichtung mit einem ersten und einem zweiten Bildsensorelement gerichtet, die jeweils eine Pixeleinheit aufweisen, die in einem Halbleitersubstrat angeordnet ist. Das erste Bildsensorelement ist zu dem zweiten Bildsensorelement benachbart. Eine erste Mikrolinse ist über dem ersten Bildsensorelement angeordnet und ist um einen ersten Linsenverschiebungsbetrag lateral von einem Mittelpunkt der Pixeleinheit des ersten Bildsensorelements verschoben. Eine zweite Mikrolinse ist über dem zweiten Bildsensorelement angeordnet und ist um einen von dem ersten Linsenverschiebungsbetrag verschiedenen zweiten Linsenverschiebungsbetrag lateral von einem Mittelpunkt der Pixeleinheit des zweiten Bildsensorelements verschoben.

Image sensor with improved near-infrared (nir) radiation phase-detection autofocus (pdaf) performance

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first pixel region and a second pixel region within a substrate. A first recess region is disposed along a back-side of the substrate within the first pixel region. The back-side of the substrate within the first pixel region is asymmetric about a center of the first pixel region in a cross-sectional view. A second recess region is disposed along the back-side of the substrate and within the second pixel region. The back-side of the substrate within the second pixel region is asymmetric about a center of the second pixel region in the cross-sectional view. The first recess region and the second recess region are substantially symmetric about a vertical line laterally between the first pixel region and the second pixel region.

Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Wavelength tunable narrow band filter

Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Halbleiterbildsensor

Ein BSI-Sensor umfasst ein Substrat, das eine Vorderseite und eine der Vorderseite entgegengesetzte Rückseite umfasst, einen Pixelsensor, der in dem Substrat angeordnet ist, eine Isolationsstruktur, die den Pixelsensor umgibt und im Substrat angeordnet ist, eine dielektrische Schicht, die über dem Pixelsensor auf der Vorderseite des Substrats angeordnet ist, und mehrere leitfähige Strukturen, die in der dielektrischen Schicht angeordnet und derart ausgelegt sind, dass sie auf die Isolationsstruktur ausgerichtet sind.

Verbesserter entwurf für bildsensortechnik

Die vorliegende Offenbarung betrifft einen integrierten Chip. Der integrierte Chip umfasst ein Bildsensorelement, welches in einem Substrat angeordnet ist. Eine Gate-Struktur ist entlang einer Vorderseite des Substrats angeordnet. Eine Rückseite des Substrats umfasst eine oder mehrere erste gewinkelte Oberflächen, welche einen zentralen Diffusor definieren, welcher über dem Bildsensorelement angeordnet ist. Die Rückseite des Substrats umfasst weiterhin zweite gewinkelte Oberflächen, welche mehrere periphere Diffusoren definieren, welche den zentralen Diffusor lateral umgeben. Die mehreren peripheren Diffusoren sind von einer kleineren Größe als der zentrale Diffusor.

Wafer level image sensor package

A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Trench isolation structure for scaled pixel region

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Band-pass filter for stacked sensor

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.

Wafer level image sensor package

A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Trench isolation structure for scaled pixel region

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Stacked semiconductor structure

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes at least one device on a front side of a semiconductor substrate. A plurality of grating layers are under the at least one device. The plurality of grating layers include at least a first material having a first refractive index alternating with a second material having a second refractive index. Contacts extend through an interlevel dielectric material, and further extend through the semiconductor substrate, to directly contact at least one of the first material and the second material below the at least one device and below the semiconductor substrate underlying the interlevel dielectric material.

Wafer level image sensor package

A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Reduced cross-talk in color and infrared image sensor

Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.