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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 30. Отображено 30.
24-09-2014 дата публикации

Real-time high-speed image pre-processing method for CMOS image sensor

Номер: CN104065937A
Автор: LI MING, LIU CHANGJU, DENG GUANGPING, LI YIQIANG, REN SIWEI, ZHANG JING, XIONG PING
Принадлежит:

A real-time high-speed image pre-processing method for a CMOS image sensor is characterized in that Bayer data output by a light-sensing part of the CMOS image sensor are included, the row number of a single-frame array of the Bayer data is M, and the column number of the single-frame array of the Bayer data is N. According to the innovation of the method, an assembly-line type working mode storing data in the modes of block-split and classification is adopted, the data are broken up into parts in the modes of block-split and classification, and relative less registers are adopted to process the data which have been broken up into parts. The real-time high-speed image pre-processing method has the advantages that the cache processing mode is changed, an on-chip cache structure which occupies less hardware resources is adopted, high-speed processing of larger cache data is achieved, and the integration level and on-chip processing speed of the CMOS image sensor are increased greatly.

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Номер записи: 1
16-11-2011 дата публикации

Controllable self-clamping SensorFET composite lateral power device

Номер: CN0101980363B
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite lateral power device and belongs to the fields of semiconductor power device technology and power integrated circuit technology. A main switching tube of a power inverter and a SensorFET device are integrated on the same P-type substrate and adopt a shared anode structure, wherein a clamping diode string is arranged between a control electrode of the SensorFET device and the shared anode; and the main switching tube of the power inverter can be a lateral metal oxide semiconductor (MOS) composite device or a conventional MOS device. The provided controllable self-clamping SensorFET composite lateral power device can provide stable charging current for an interior circuit and effectively release avalanche energy, so a transient safety operation area of the SensorFET device is expanded. Meanwhile, due to the connection of a clamping tube and a control grid area, the energy release and clamping time are controlled soas ...

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Номер записи: 2
07-05-2014 дата публикации

Explosive repair welding method for defects of titanium steel composite material

Номер: CN103769741A
Автор: DENG GUANGPING, XU YUHAO, QU RUIBO, XIN BAO
Принадлежит:

The invention provides an explosive repair welding method for defects of a titanium steel composite material and relates to the field of manufacturing metal composite materials. The method comprises grooving in a non-compounded region, coping and then carrying out explosive repair welding, and as a result, the defects of the non-compounded region can be repaired successfully and the compounding rate is enabled to reach 100%; besides, through sampling and metallographic observation, a titanium-steel interface, a titanium-titanium interface and the intersection of titanium-steel-titanium are evenly corrugated, and therefore, metallurgical bonding is realized and shear performance detection indicates high bonding strength of the titanium-steel interface, the titanium-titanium interface and the intersection of titanium-steel-titanium, and in the meantime, the explosive repair welding method is convenient to operate, high in compounding rate and the like.

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Номер записи: 3
18-08-2023 дата публикации

Quenching circuit for common-anode high-voltage Geiger mode APD (avalanche photodiode)

Номер: CN116613236A
Автор: PU XI, DENG GUANGPING, HUANG JIAN, WU ZHIJUN, LIAO KAI
Принадлежит:

The invention belongs to the technical field of semiconductors, and particularly relates to a quenching circuit for a common-anode high-voltage Geiger mode APD (avalanche photodiode). Comprising an avalanche current detection module, a quenching module, a reset module, a logic control module and an SPAD, a grid electrode of a thin-grid high-voltage NMOS tube MN2 is connected with a signal QC, and a source electrode of the thin-grid high-voltage NMOS tube MN2 is grounded; the cathodes of the reset module, the avalanche current detection module and the SPAD are connected with the drain electrode of the thin-gate high-voltage NMOS tube MN2; the anode of the SPAD is connected with a negative bias voltage-VBIAS; a drain electrode of a low-voltage NMOS (N-channel Metal Oxide Semiconductor) tube MN3 and a drain electrode of a low-voltage PMOS (P-channel Metal Oxide Semiconductor) tube MP3 of the avalanche current detection module are jointly connected to the logic control module; according to ...

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Номер записи: 4
22-08-2023 дата публикации

Manufacturing method of composite material with extra-thick titanium composite layer

Номер: CN116618967A
Автор: REN JIANGYI, LI JUN, ZHAI WEIGUO, DENG GUANGPING
Принадлежит:

The invention provides a manufacturing method of a composite material with an extra-thick titanium composite layer, which comprises the following steps: step 1, respectively selecting a titanium layer and a base layer, and carrying out surface treatment on the titanium layer; secondly, a coating is selected and arranged on the titanium layer in a cold spraying deposition mode; thirdly, the coating is subjected to heat treatment; fourthly, the titanium layer and the base layer are welded and formed in an explosive welding mode, a semi-finished composite board is obtained, and the coating is arranged between the titanium layer and the base layer; 5, reprocessing the semi-finished composite board to obtain a qualified composite material; by means of the manufacturing method of the composite material with the extra-thick titanium composite layer, the problem of combination of a large-area and large-thickness titanium layer and stainless steel or a steel plate can be solved, the titanium-steel ...

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Номер записи: 5
04-07-2012 дата публикации

Controllable self-clamp Sensor FET (Field Effect Transistor) composite longitudinal power device with multiple bleeding channels

Номер: CN0101976665B
Автор: LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO, ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG
Принадлежит:

The invention provides a controllable self-clamp Sensor FET (Field Effect Transistor) composite longitudinal power device with multiple discharging channels, belonging to the fields of semiconductor power device technology and power integrated circuit technology. In the invention, a main switch tube of a power converter and a Sensor FET device are integrated on the same P type substrate and shareone anode, wherein the Sensor FET device completes the functions of sampling current of the main switch tube of the power converter and charging an internal control circuit; in addition, the main switch tube of the power converter has a voltage clamp structure and can maintain the voltage of a primary coil of the power converter in a transient safe operation area of the Sensor FET device, and meanwhile, when a main switch device in the power converter is switched off, avalanche energy stored by the primary coil is bled under the regulation and control of a controllable grid region of the Sensor ...

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Номер записи: 6
07-01-2015 дата публикации

Method for restraining background currents of focal plane detector

Номер: CN104266761A
Автор: LIU CHANGJU, LI YIQIANG, ZHANG JING, ZHU XIAOXIAO, DENG GUANGPING, WU ZHIJUN, LI MING, REN SIWEI, LIU YEQI, LI MENGTAO
Принадлежит:

The invention provides a method for restraining background currents of a focal plane detector. The method is characterized in that the input end of an operational amplifier is connected with one end of a background subtracting capacitor (4), and the other end of the background subtracting capacitor is connected with a signal generator; the signal generator can output plateau voltage signals periodically, duration time of the single plateau voltage signal is recorded as a subtraction process, and a time interval between every two adjacent plateau voltage signals is recorded as a non-subtraction process; the subtraction process corresponds to an integration process, and non-subtraction process corresponds to a non-integration process; in the non-subtraction process, the amplitude of an output signals of the signal generator is the same as a final value of the previous plateau voltage signal. The method has the advantages that the influence on a CMOS focal plane reading circuit from the background ...

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Номер записи: 7
16-02-2011 дата публикации

Controllable self-clamp Sensor FET (Field Effect Transistor) composite longitudinal power device with multiple bleeding channels

Номер: CN0101976665A
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention provides a controllable self-clamp Sensor FET (Field Effect Transistor) composite longitudinal power device with multiple discharging channels, belonging to the fields of semiconductor power device technology and power integrated circuit technology. In the invention, a main switch tube of a power converter and a Sensor FET device are integrated on the same P type substrate and share one anode, wherein the Sensor FET device completes the functions of sampling current of the main switch tube of the power converter and charging an internal control circuit; in addition, the main switch tube of the power converter has a voltage clamp structure and can maintain the voltage of a primary coil of the power converter in a transient safe operation area of the Sensor FET device, and meanwhile, when a main switch device in the power converter is switched off, avalanche energy stored by the primary coil is bled under the regulation and control of a controllable grid region of the Sensor ...

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Номер записи: 8
14-05-2014 дата публикации

Method for manufacturing copper steel bearing liner

Номер: CN103785999A
Автор: ZHANG BAOQI, WANG BINBIN, XU YUHAO, LI YANKAI, DENG GUANGPING, LIU JINTAO
Принадлежит:

The invention provides a method for manufacturing a copper steel bearing liner. A steel base layer (1) and a copper compound layer (2) are welded into a copper steel composite board through an explosive welding mode, and then the copper steel composite board is machined into the copper steel bearing liner through the grinding tool pressing process, the welding process, the rough machining process, the heat treatment process, the finish machining process and the like, wherein the copper steel composite board is stable in interface bonding, small in vibration, low in noise, long in service life and maintenance cycle, and reliable in operation. The copper steel bearing liner has the advantages of being convenient to manufacture, low in maintenance cost in the process of use, high in comprehensive economic benefits and the like, and can replace similar products overseas, and procurement cost is greatly lowered.

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Номер записи: 9
22-04-2009 дата публикации

Special explosive for explosively welding noble metal composite material and preparation thereof

Номер: CN0101412650A
Автор: YUE ZONGHONG, XIN BAO, DENG GUANGPING, ZONGHONG YUE, BAO XIN, GUANGPING DENG
Принадлежит:

The invention discloses a detonator which is specially used for explosive welding and has a cladding layer made of copper, copper alloy, aluminum, aluminum alloy, titanium, titanium alloy and other noble metal composite materials and a manufacturing method thereof. The detonator comprises the following compositions in mass portion: 64 to 75 percent of ammonium nitrate, 2 to 3.5 percent of composite oil phase, 2.5 to 3.5 percent of wood powder, 15 to 30 percent of salt and 1.5 to 3.0 percent of hollow glass microsphere. Firstly, the ammonium nitrate is subjected to swelling treatment; secondly, swelled ammonium nitrate in a wheel mill is mixed with the composite oil phase, the wood powder, the salt and the hollow glass microsphere; and finally, a material is discharged at the temperature of 40 DEG C below zero to obtain the product. The detonator does not contain a composition of TNT, stable explosive performance, low cost for the raw materials and simple manufacturing method, and is suitable ...

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Номер записи: 10
01-07-2015 дата публикации

Automatic exposure method and device for CMOS (complementary metal oxide semiconductor) image sensor

Номер: CN104754240A
Автор: ZHU XIAOXIAO, LIU CHANGJU, LI YIQIANG, WU ZHIJUN, DENG GUANGPING, REN SIWEI
Принадлежит:

The invention provides an automatic exposure method and device for a CMOS (complementary metal oxide semiconductor) image sensor. The automatic exposure method includes: after a currently-photographed image is acquired, calculating current exposure quantity and a target brightness threshold value of the image, calculating exposure quantity of a sensor, needing to be adjusted, between the current exposure quantity and the target brightness threshold value, and dividing the exposure quantity into 2n+1 exposure quantity sections; according to the exposure quantity of each section and odevity of the corresponding section, adopting an alternate adjusting mode of exposure time and analog gain to adjust the exposure quantity until the exposure quantity reaches the target brightness threshold value; if the exposure time and the analog gain are adjusted to be maximum values while the exposure quantity still does not reach the target brightness threshold value, adjusting digital gain. The automatic ...

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Номер записи: 11
18-05-2011 дата публикации

Explosive welding method for large-area lead-steel composite board

Номер: CN0102059445A
Автор: GUANGPING DENG, FACHEN HOU, YUHAO XU, LI JUN, GANG HAN, JINTAO LIU, DENG GUANGPING, HOU FACHEN, XU YUHAO, HAN GANG, LIU JINTAO
Принадлежит:

The invention discloses an explosive welding method for a large-area lead-steel composite board, in which a base steel board and a composite lead board are adopted. The method comprises the following steps of: adding a high-strength metal board on the surface of the composite lead board, and bonding the composite lead board and the high-strength metal board together with adhesives; and proportioning special explosive as follows: 45-48 parts of expanded ammonium nitrate, 48-51 parts of sodium chloride and 4-6 parts of pearlite, ensuring a detonation velocity range of 1200m/s-1500m/s and adopting slop type explosive distribution at a far end. The method disclosed in the invention realizes the support of the lead board so that the explosive welding of the large-area lead-steel composite board can be implemented; and the method has the advantages of eliminating negative effects of surface burn and boundary effect on explosive composite, ensuring that the lead-steel composite board has the primary ...

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Номер записи: 12
23-02-2011 дата публикации

Controllable self-clamping SensorFET composite vertical power device

Номер: CN0101980362A
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite vertical power device, which belongs to the technical field of semiconductor power devices and power integrated circuits. In the device, a main switch tube of a power inverter and a SensorFET device are integrated on the same P-type substrate and have a shared anode (or shared metal anode) structure, wherein a clamping diode string is arranged between a control electrode and the shared anode of the SensorFET device; and the main switch tube of the power inverter can be a vertical metal oxide semiconductor (MOS) composite device or the normal vertical MOS device. The controllable self-clamping SensorFET composite vertical power device provided by the invention can effectively discharge snow slide energy while providing a stable charge current for an internal circuit, so that a transient safe operating area of the SensorFET device is expanded. Moreover, the energy discharging amount and clamping time are controlled by ...

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Номер записи: 13
07-05-2014 дата публикации

Connection joint for pressing

Номер: CN103775776A
Автор: CUI WEICHAO, DENG GUANGPING, LI YANKAI
Принадлежит:

The invention provides a connection joint for pressing. The connection joint for the pressing comprises a body (8), wherein a water pipe connector B (7) and a multilayer composite transition joint connection end socket (10) respectively extend outward from two ends of the body (8), a through hole (11) communicated with the water pipe connector B and the multilayer composite transition joint connection end socket is formed in the middle of the body, a counter bore (12) communicated with the through hole is formed in the outer edge face of the body, and a pressure gauge port (9) is arranged in the inner edge face of an external port of the counter bore. During the actual use process, a multilayer composite transition joint is freely placed on a test platform, and therefore the problem that the multilayer composite transition joint does not bear constraint pressure from flanges at two ends of the multilayer composite transition joint during the pressing process is effectively solved, the multilayer ...

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Номер записи: 14
23-02-2011 дата публикации

Controllable self-clamping SensorFET composite lateral power device

Номер: CN0101980363A
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite lateral power device and belongs to the fields of semiconductor power device technology and power integrated circuit technology. A main switching tube of a power inverter and a SensorFET device are integrated on the same P-type substrate and adopt a shared anode structure, wherein a clamping diode string is arranged between a control electrode of the SensorFET device and the shared anode; and the main switching tube of the power inverter can be a lateral metal oxide semiconductor (MOS) composite device or a conventional MOS device. The provided controllable self-clamping SensorFET composite lateral power device can provide stable charging current for an interior circuit and effectively release avalanche energy, so a transient safety operation area of the SensorFET device is expanded. Meanwhile, due to the connection of a clamping tube and a control grid area, the energy release and clamping time are controlled so as ...

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Номер записи: 15
11-01-2012 дата публикации

Controllable self-clamping SensorFET composite transverse power device with multiple release channels

Номер: CN0101976666B
Автор: LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO, ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite transverse power device with multiple release channels, and belongs to the fields of semiconductor power device technology and power integrated circuit technology. A main switching tube of a power converter and a SensorFET device are integrated on the same P-type substrate and share an anode structure, wherein the SensorFET device finishes the functions of sampling the current of the main switching tube of the power converter and charging an internal control circuit; the main switching tube in the power converter has a voltage clamping structure, and the voltage of a primary coil of the power converter is kept within a transient safe working area of the SensorFET device by voltage clamping; meanwhile, when a main switching device in the power converter is turned off, the avalanche energy stored by the primary coil is controlled and released through a controllable gate region of the SensorFET device to realize control ...

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Номер записи: 16
16-02-2011 дата публикации

Fast recovery metal oxide semiconductor diode with low power consumption

Номер: CN0101976687A
Автор: ZEHONG LI, GUANJUN JIANG, SHIJIANG YU, GUANGPING DENG, TING LI, JIAXIONG XIE, CHAO ZHANG, MIN REN, XIAOLONG LIU, BO ZHANG, LI ZEHONG, JIANG GUANJUN, YU SHIJIANG, DENG GUANGPING, LI TING, XIE JIAXIONG, ZHANG CHAO, REN MIN, LIU XIAOLONG, ZHANG BO
Принадлежит:

A fast recovery metal oxide semiconductor diode with low power consumption belongs to the technical field of semiconductor devices. The diode is provided with a junction field effect transistor region (4) and an electron accumulation layer structure (12), wherein the junction field effect transistor region (4) comprises two deep P regions (5) and an N-epitaxial layer (3) between the two deep P regions; and the electron accumulation layer structure (12) comprises two N heavily doped regions (7), the N-epitaxial layer (3), a gate oxide layer (8) on the surface of the N-epitaxial layer (3) and a gate electrode (9). By utilizing the following surface electric field effect of the metal oxide semiconductor structure: a plurality of sub-accumulation layers are formed in case of forward voltage while a plurality of sub-depletion layers are formed in case of backward voltage, the diode can obtain quite low turn-on voltage drop and can simultaneously bear high reverse breakdown voltage and leak less ...

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Номер записи: 17
07-01-2015 дата публикации

CMOS image sensor data read-write control method

Номер: CN104270585A
Автор: REN SIWEI, ZHU XIAOXIAO, LIU CHANGJU, LI YIQIANG, LI MENGTAO, LI MING, DENG GUANGPING, ZHANG JING, WU ZHIJUN, LIU YEQI
Принадлежит:

A CMOS image sensor data read-write control method includes the steps that a cache device is used for completing odd-even separation of data, only useful data are cached, and not all data need to be cached. The CMOS image sensor data read-write control method has the technical advantages that conversion between line-by-line data and odd-even interlaced data is achieved by adopting a double-SRAM structure, hardware requirements are greatly reduced, and on-chip integration of the cache device can be achieved on a CMOS image sensor.

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Номер записи: 18
24-12-2014 дата публикации

Pixel structure of high-speed global shutter and signal control method of pixel structure

Номер: CN104243861A
Автор: WU ZHIJUN, LI YIQIANG, LIU CHANGJU, DENG GUANGPING, REN SIWEI
Принадлежит:

The invention discloses a pixel structure of a high-speed global shutter. According to the pixel structure, innovation is made to the electric structure of a sampling switch, and two sampling capacitors can be independently managed, so that sampling capacitance during charge transfer in the process of reading does not change; in addition, the invention further discloses a signal control method applied together with the pixel structure. The pixel structure and the signal control method thereof have the advantages that voltage amplitude of output signals of the pixel structure can be improved, dynamic range of pixels can be widened, and image gradation quality can be improved; meanwhile, indexes such as CVF, PLS and noise of a typical 8T structure are not changed.

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Номер записи: 19
16-02-2011 дата публикации

Controllable self-clamping SensorFET composite transverse power device with multiple release channels

Номер: CN0101976666A
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite transverse power device with multiple release channels, and belongs to the fields of semiconductor power device technology and power integrated circuit technology. A main switching tube of a power converter and a SensorFET device are integrated on the same P-type substrate and share an anode structure, wherein the SensorFET device finishes the functions of sampling the current of the main switching tube of the power converter and charging an internal control circuit; the main switching tube in the power converter has a voltage clamping structure, and the voltage of a primary coil of the power converter is kept within a transient safe working area of the SensorFET device by voltage clamping; meanwhile, when a main switching device in the power converter is turned off, the avalanche energy stored by the primary coil is controlled and released through a controllable gate region of the SensorFET device to realize control ...

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Номер записи: 20
26-03-2014 дата публикации

Multi-layer metal composite plate and manufacturing method thereof

Номер: CN103660429A
Автор: LI PEIYUE, ZHANG CHAO, DENG GUANGPING, LI SHIKAI
Принадлежит:

The invention relates to a multi-layer metal composite plate and a manufacturing method thereof. The multi-layer metal composite plate comprises a plurality of metal layers in the thickness direction, the number of the metal layers can be increased or decreased; each metal layer comprises a plurality of metal layers and adopts an aluminum alloy layer (1), a pure aluminum layer (2), a titanium layer (3), a nickel layer (4) or a stainless steel layer (5); the thickness of the aluminum alloy layer (1) is 2-100 mm, the thickness of the pure aluminum layer (2) is 1-80 mm; the thickness of the titanium layer (3) is 0.2-20 mm; the thickness of the nickel layer (4) is 0.2-20 mm; and the thickness of the stainless steel layer (5) is 5-100 mm; and the manufacturing method of the multi-layer metal composite plate adopts an explosive cladding mode for manufacturing. According to the multi-layer metal composite plate and the manufacturing method thereof, metal materials on two sides are increased or ...

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Номер записи: 21
25-02-2015 дата публикации

Low-power-consumption real-time noise-reduction and sharpening merged preprocessing algorithm for CMOS image sensor

Номер: CN104376534A
Автор: LI MING, WU ZHIJUN, LI MENGTAO, LI YIQIANG, DENG GUANGPING, REN SIWEI, LIU CHANGJU
Принадлежит:

The invention provides a low-power-consumption real-time noise-reduction and sharpening merged preprocessing algorithm for a CMOS image sensor. The low-power-consumption real-time noise-reduction and sharpening merged preprocessing algorithm aims to solve the problems that in the prior art, according to a CMOS image sensor image preprocessing method, a denoising algorithm and a sharpening algorithm are executed separately, the algorithm is high in complexity, and saving hardware resources and reducing the total power consumption are not facilitated. By means of the low-power-consumption real-time noise-reduction and sharpening merged preprocessing algorithm, input light signals are divided into three primary colors of red, green and blue (RGB), namely three kinds of pixels RGB through a color filter array (CFA), data cache is conducted in the mode that data are stored in a on-chip blocked and classified mode, the noise of the pixels RGB is reduced through a space self-adaptive noise reduction ...

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Номер записи: 22
19-01-2011 дата публикации

Super Junction VDMOS device

Номер: CN0101950759A
Автор: ZEHONG LI, TAO HU, GUANGPING DENG, ZHENHUA QIAN, XIN HONG, BO ZHANG, LI ZEHONG, HU TAO, DENG GUANGPING, QIAN ZHENHUA, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a Super Junction VDMOS device, which belongs to the technical field of semiconductor power devices. In the invention, a trench Schottky contact structure is introduced on the basis of the Super Junction VDMOS device with a flat Schottky contact structure. The trench Schottky contact structure is that: a polycrystalline gate electrode is divided into two sections above an N-type pillar area; meanwhile, the area, which is between the two sections of the polycrystalline gate electrode, of a metal source electrode is extended downward to the N-type pillar area and forms the trench Schottky contact structure on the surface contacted with the N-type pillar area. In addition, the two ends of the metal source electrode may have a trench ohmic contact structure. The Super Junction VDMOS device provided by the invention has an excellent reverse recovery property; with a requirement of the same reverse recovery property, the requirement on the wide of a process line in the ...

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Номер записи: 23
10-09-2014 дата публикации

Nonlinear signal conversion circuit of CMOS image sensor

Номер: CN104038231A
Автор: ZHANG JING, LIU CHANGJU, WU ZHIJUN, ZHU XIAOXIAO, LI MING, LI YIQIANG, DENG GUANGPING, LIU YEQI, REN SIWEI, YANG YIWEI
Принадлежит:

The invention discloses a nonlinear signal conversion circuit of a CMOS image sensor. The nonlinear signal conversion circuit comprises a pixel array, a counter, a nonlinear signal generator and a signal converter unit in the CMOS image sensor. The pixel array outputs pixel analog signals to the signal converter unit. The counter provides digital code signals for the signal converter unit and the nonlinear signal generator. The nonlinear signal generator carries out digital-to-analogue conversion on the digital code signals, and then outputs nonlinear analog signals to the signal converter unit. The signal converter unit comprises a comparator and a latch, the comparator compares the pixel analog signals with the nonlinear analog signals in real time, and when the pixel analog signals and the nonlinear analog signals are equal, the current digital code signals are latched by the latch. The nonlinear signal conversion circuit mainly has the purposes and advantages that the dark light sensitivity ...

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Номер записи: 24
08-07-2015 дата публикации

Histogram equalization analog-digital conversion circuit of image sensor and method

Номер: CN104767909A
Автор: ZHANG JING, LIU CHANGJU, WU ZHIJUN, ZHU XIAOXIAO, LI MING, LI YIQIANG, DENG GUANGPING, LIU YEQI, REN SIWEI, YANG YIWEI
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The invention discloses a histogram equalization analog-digital conversion circuit of an image sensor and a method. The histogram equalization analog-digital conversion circuit comprises a pixel array, a subsequent image processing circuit and a histogram estimation circuit. The histogram equalization analog-digital conversion circuit is characterized in that a voltage access optimizing circuit and an optimizing analog-digital conversion inner core are further included; an analog signal output by the pixel array can be input into the optimizing analog-digital conversion inner core to be processed through analog-digital conversion, one way of an output digital signal is fed back to the histogram estimation circuit, and a brightness average value of an current image is calculated by the histogram estimation circuit; the brightness average value is input into the voltage access optimizing circuit, a variable analog voltage value is output, and the non-linear analog-digital conversion feature ...

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Номер записи: 25
21-12-2011 дата публикации

Controllable self-clamping SensorFET composite vertical power device

Номер: CN0101980362B
Автор: ZEHONG LI, GUANGPING DENG, ZHENHUA QIAN, TAO HU, XIN HONG, BO ZHANG, LI ZEHONG, DENG GUANGPING, QIAN ZHENHUA, HU TAO, HONG XIN, ZHANG BO
Принадлежит:

The invention discloses a controllable self-clamping SensorFET composite vertical power device, which belongs to the technical field of semiconductor power devices and power integrated circuits. In the device, a main switch tube of a power inverter and a SensorFET device are integrated on the same P-type substrate and have a shared anode (or shared metal anode) structure, wherein a clamping diodestring is arranged between a control electrode and the shared anode of the SensorFET device; and the main switch tube of the power inverter can be a vertical metal oxide semiconductor (MOS) compositedevice or the normal vertical MOS device. The controllable self-clamping SensorFET composite vertical power device provided by the invention can effectively discharge snow slide energy while providing a stable charge current for an internal circuit, so that a transient safe operating area of the SensorFET device is expanded. Moreover, the energy discharging amount and clamping time are controlledby connecting ...

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Номер записи: 26
06-08-2014 дата публикации

High-speed response photoelectric detector

Номер: CN103972312A
Автор: DENG GUANGPING, LIU CHANGJU, LI MING, ZHU XIAOXIAO, LI YIQIANG, REN SIWEI
Принадлежит:

A high-speed response photoelectric detector comprises a plurality of photodiodes, the photodiodes are distributed in a one-dimensional array, and the axial direction of a single photodiode is perpendicular to the extending direction of the one-dimensional array. The high-speed response photoelectric detector is characterized in that each photodiode is composed of a P-type substrate, an N-region and an N region; each N-region is formed by ion implantation doping in the P-type substrate, and each N region is formed by ion implantation doping in the corresponding N-region; P-i-N junctions are formed by the P-type substrate, the N-region and the N region; the thickness of the N region is larger in the axial direction of the photodiodes and distributed in stepped appearance, and a collecting end is formed at the surface area of the thickest position of each N region; impurity doping concentration in the N regions is uniform, and the impurity doping concentration in the N regions is higher than ...

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Номер записи: 27
25-01-2012 дата публикации

Special explosive for explosively welding noble metal composite material and preparation thereof

Номер: CN0101412650B
Автор: DENG GUANGPING, YUE ZONGHONG, XIN BAO, GUANGPING DENG, ZONGHONG YUE, BAO XIN
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The invention discloses a detonator which is specially used for explosive welding and has a cladding layer made of copper, copper alloy, aluminum, aluminum alloy, titanium, titanium alloy and other noble metal composite materials and a manufacturing method thereof. The detonator comprises the following compositions in mass portion: 64 to 75 percent of ammonium nitrate, 2 to 3.5 percent of composite oil phase, 2.5 to 3.5 percent of wood powder, 15 to 30 percent of salt and 1.5 to 3.0 percent of hollow glass microsphere. Firstly, the ammonium nitrate is subjected to swelling treatment; secondly, swelled ammonium nitrate in a wheel mill is mixed with the composite oil phase, the wood powder, the salt and the hollow glass microsphere; and finally, a material is discharged at the temperature of 40 DEG C below zero to obtain the product. The detonator does not contain a composition of TNT, stable explosive performance, low cost for the raw materials and simple manufacturing method, and is suitable ...

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Номер записи: 28
25-04-2012 дата публикации

Fast recovery metal oxide semiconductor diode with low power consumption

Номер: CN0101976687B
Автор: LI ZEHONG, JIANG GUANJUN, YU SHIJIANG, DENG GUANGPING, LI TING, XIE JIAXIONG, ZHANG CHAO, REN MIN, LIU XIAOLONG, ZHANG BO, ZEHONG LI, GUANJUN JIANG, SHIJIANG YU, GUANGPING DENG, TING LI, JIAXIONG XIE, CHAO ZHANG, MIN REN, XIAOLONG LIU, BO ZHANG
Принадлежит:

A fast recovery metal oxide semiconductor diode with low power consumption belongs to the technical field of semiconductor devices. The diode is provided with a junction field effect transistor region (4) and an electron accumulation layer structure (12), wherein the junction field effect transistor region (4) comprises two deep P regions (5) and an N-epitaxial layer (3) between the two deep P regions; and the electron accumulation layer structure (12) comprises two N heavily doped regions (7), the N-epitaxial layer (3), a gate oxide layer (8) on the surface of the N-epitaxial layer (3) and agate electrode (9). By utilizing the following surface electric field effect of the metal oxide semiconductor structure: a plurality of sub-accumulation layers are formed in case of forward voltage while a plurality of sub-depletion layers are formed in case of backward voltage, the diode can obtain quite low turn-on voltage drop and can simultaneously bear high reverse breakdown voltage and leakless ...

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Номер записи: 29
24-12-2014 дата публикации

CMOS (complementary metal oxide semiconductor) image sensor capable of being used in multiple working modes

Номер: CN104241311A
Автор: LI YIQIANG, WU ZHIJUN, LIU CHANGJU, LI MING, DENG GUANGPING, LI MENGTAO
Принадлежит:

The invention provides a CMOS (complementary metal oxide semiconductor) image sensor capable of being used in multiple working modes and aims to solve the problem that an CMOS image sensor in the prior art cannot take both multispectral output and high quantum efficiency into consideration. The CMOS image sensor is structured on the basis of 4T pixel of surface clamping and comprises three transmission grids, a photoelectric diode, a floating node, a resetting tube resetting grid, a source tracker and a selectron, the photoelectric diode adopts a three-N-buried-layer vertical stacked structure, each N buried layer senses illumination of different wavebands and is correspondingly connected with one transmission grid, three N buried layers share the floating node, and the CMOS image sensor can be in different working modes by differently sequencing the transmission grids, the resetting tube resetting grid and the selectron. The CMOS image sensor has the advantages that multispectral selection ...

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Номер записи: 30