ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. 1. A cleaning composition comprising at least one solvent , at least one corrosion inhibitor , at least one quaternary base , and at least one organic amine , wherein the corrosion inhibitor comprises a species selected from the group consisting of: cyanuric acid; barbituric acid and derivatives thereof; glucuronic acid; squaric acid; alpha-keto acids; adenosine and derivatives thereof; purine compounds and derivatives thereof; phosphonic acid derivatives; phenanthroline in combination with ascorbic acid; glycine in combination with ascorbic acid; nicotinamide and derivatives thereof; flavonols and derivatives thereof; anthocyanins and derivatives thereof; flavonols in combination with anthocyanins; quercitin and derivatives thereof quercitin in combination with anthocyanins; and combinations thereof , wherein the cleaning composition is effective for the removal of residue from a microelectronic device having said residue thereon.2. The cleaning composition of claim 1 , wherein the corrosion inhibitor comprises at least one species selected from the group consisting of squaric acid claim 1 , adenosine and derivatives thereof claim 1 , phenanthroline in combination with ascorbic acid claim 1 , nicotinamide and derivatives thereof claim 1 , flavonoids claim 1 , anthocyanins claim 1 , flavonols in combination with anthocyanins claim 1 , quercitin and derivatives thereof claim 1 , glucuronic acid claim 1 , quercitin in combination with anthocyanins claim 1 , and combinations thereof.3. ...

ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

NEW ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. 1. A cleaning composition comprising at least one solvent , at least one corrosion inhibitor , and at least one amine , wherein the corrosion inhibitor comprises a species selected from the group consisting of: cyanuric acid; barbituric acid and derivatives thereof; glucuronic acid; squaric acid; alpha-keto acids; adenosine and derivatives thereof; purine compounds and derivatives thereof; phosphonic acid derivatives; phenanthroline/ascorbic acid; glycine/ascorbic acid; nicotinamide and derivatives thereof; flavonols and derivatives thereof; anthocyanins and derivatives thereof; flavonol/anthocyanin; and combinations thereof , wherein the cleaning composition is effective for the removal of residue from a microelectronic device having said residue thereon.2. The cleaning composition of claim 1 , wherein the purine compounds comprise a species selected from the group consisting of adenine claim 1 , purine claim 1 , guanine claim 1 , hypoxanthine claim 1 , xanthine claim 1 , theobromine claim 1 , caffeine claim 1 , uric acid claim 1 , and isoguanine.3. The cleaning composition of claim 1 , wherein the corrosion inhibitor comprises at least one species selected from the group consisting of adenine claim 1 , purine claim 1 , guanine claim 1 , hypoxanthine claim 1 , xanthine claim 1 , theobromine claim 1 , caffeine claim 1 , uric acid claim 1 , isoguanine claim 1 , and derivatives thereof.4. The cleaning composition of claim 1 , wherein the cleaning composition further comprises at least ...

Antioxidants for post-CMP cleaning formulations

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Kinetically controlled solder bonding

An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond. This forms a quantity of the intermetallic compound in the bond which is sufficient to raise the melting temperature of the bond to a desired usage temperature that is substantially above the first melting temperature. The intermetallic compound is typically composed of a ternary solder composition.

Antioxidants for post-CMP cleaning formulations

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Antioxidants for post-CMP cleaning formulations

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

High transformation temperature shape memory alloy

ABSTRACT A high temperature titanium-based shape memory alloy contains from at least 0.1 at. % hafnium. Articles formed from the disclosed alloy have high transformation temperatures. The alloy of the invention can be successfully hot and cold worked to make articles such as springs and wires. Preferred alloys for making such articles according to the invention consist essentially of compositions of the general formula: MATi(100-A-B)XB wherein M is a metal other than zirconium and hafnium, preferably Ni, A is 30 to 51 at. %, B is 0.1 to 50 at %, and X is Hf or a combination of Hf and Zr, provided that: (a) the amount of Zr does not exceed about 25 at. % in the alloy; (b) the amount of Hf is at least 0.1 at. %; and (c) the sum of A + B is 80 at. % or less.

Kinetically controlled solder bonding

An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond. This forms a quantity of the intermetallic compound in the bond which is sufficient to raise the melting temperature of the bond to a desired usage temperature that is substantially above the first melting temperature. The intermetallic compound is typically composed of a ternary solder composition.

Uric acid additive for cleaning formulations