Helicon wave plasma enhanced chemical vapor deposition unit

The invention provides a helicon wave plasma enhanced chemical vapor deposition unit, belonging to the technical field of plasma processing units, in order to achieve the stability and effective feed-in of radio-frequency power and effectively prevent the mode of the helicon wave plasma from hopping. The technical scheme of the invention is as follows that: the helicon wave plasma enhanced chemical vapor deposition unit comprises an external high-voltage power supply, an antenna for exciting the helicon wave plasma, an insulating dielectric tube, a high-vacuum cavity, a coil and an auxiliary coil, wherein the insulating dielectric tube is provided with an air inlet and an inlet air controlling device, and the high-vacuum cavity is provided with a ring-shaped nozzle and a heater; a self-excited radio-frequency oscillating circuit is connected between the external high-voltage power supply and the antenna for exciting the helicon wave plasma. By coupling the radio-frequency electromagnetic ...

Verfahren zur stufenartigen Vakuum-Formatierung einer Lithium-Ionen-Kondensatorbatterie

Verfahren zur stufenartigen Vakuum-Formatierung einer Lithium-Ionen-Kondensatorbatterie, dadurch gekennzeichnet, dass das Verfahren folgende Schritte aufweist:eine PP-Röhre, die eine Länge von 20mm und einen Durchmesser von 5mm aufweist, wird bei Verkapslung einer Zelle der Kondensatorbatterie als Flüssigkeitsfüllungsöffnung und zur Verbindung mit einer Vakuumpumpe vorgesehen; die Zellen der Kondensatorbatterie werden mit einer Flüssigkeit gefüllt und für 18 ± 4 Stunden stehen gelassen; ein Lade- und Entladepotenzial anhand der Redoxpotenziale der Anode und der Kathode werden bestimmt; eine Formatierung durch stufenartige Lade- und Entladungszyklen mit unterschiedlich großen Strömen wird durchgeführt, wobei die PP-Röhre zugleich mit der Vakuumpumpe verbunden wird und ein Vakuumsgrad von -0,05MPa eingestellt wird und wobei die definierten Spannungen und Ströme für unterschiedliche Phasen wie folgend lauten:erste Phase: die Anfangsspannung ist eine Initialspannung, U1 ist die Sperrspannung ...

High-sensitivity transverse thermoelectric optical detector

The invention discloses a high-sensitivity transverse thermoelectric optical detector and belongs to the technical field of detection equipment. The high-sensitivity transverse thermoelectric optical detector comprises a single crystal substrate and a transverse thermoelectric element covering the single crystal substrate and is characterized in that the transverse thermoelectric element is a layered cobalt oxide metal nanometer composite thermoelectric film which obliquely grows on the single crystal substrate along an axis c, two metal electrodes are arranged at the upper surface of the composite thermoelectric film, and the two metal electrodes are connected with the input end of a voltage meter through leads. The high-sensitivity transverse thermoelectric optical detector is easy to prepare, low in cost, high in response sensitivity, fast in response and capable of realizing wide spectrum detection and heat radiation detection.

Optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect

The invention provides an optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect. The optical detector comprises a transverse thermoelectric element. The upper surface of the transverse thermoelectric element is provided with two symmetrical metal electrodes to act as voltage signal output ends. The voltage signal output end of the transverse thermoelectric element and the input end of a voltmeter are connected by an electrode lead wire. The optical detector is characterized in that the transverse thermoelectric element comprises an oxide single crystal substrate and a BiCuSeO thin-film which is grown on the oxide single crystal substrate in a c-axis inclined way. The metal electrodes are arranged on the upper surface of the BiCuSeO thin-film. According to the optical detector based on the BiCuSeO thin-film transverse thermoelectric effect, refrigeration is not needed, response waveband is wide and detection sensitivity is high so that optical and thermal ...

Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature

The invention discloses a preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature. The method comprises the following steps: first, placing the rinsed substratum on the substrate plate of the chemical vapor deposition device strengthened by helicon plasma, and then vacuumizing the reaction chamber of the chemical vapor deposition device strengthened by helicon plasma, and rinsing the substrate plate and the internal walls of the chamber by hydrogen plasma; then, reheating the substrate plate and inflating reaction gas into the reaction chamber to adjust the air pressure, and applying magnetic field to the plasma production chamber of the chemical vapor deposition device strengthened by helicon plasma, and turning on the RF power supply to start the deposition of carborundum films to obtain the carborundum films sample; finally, cooling the chamber off to room temperature under the protection of hydrogen and taking out the sample from the chamber ...

Verfahren zur stufenartigen Vakuum-Formatierung einer Lithium-Ionen-Kondensatorbatterie

Die Erfindung betrifft ein Verfahren zur stufenartigen Vakuum-Formatierung einer Lithium-Ionen-Kondensatorbatterie, wobei das Verfahren folgende Schritte umfasst: eine PP-Röhre wird bei Verkapslung einer Zelle der Kondensatorbatterie als Flüssigkeitsfüllungsöffnung und zur Verbindung mit einer Vakuumpumpe vorgesehen; die Zellen der Kondensatorbatterie werden mit einer Flüssigkeit gefüllt und für 18 ± 4 Stunden stehen gelassen; ein Lade- und Entladepotenzial anhand der Redoxpotenziale der Anode und der Kathode werden bestimmt; eine Formatierung durch stufenartige Lade- und Entladungszyklen mit unterschiedlich großen Strömen wird durchgeführt, wobei die PP-Röhre zugleich mit der Vakuumpumpe verbunden und ein Vakuumsgrad von –0,05 MPa erzeugt wird. Dieses Verfahren zeichnet sich durch seine Schnelligkeit, seine Effizienz sowie sein breites Anwendungsgebiet aus.

Method for preparing flexible polymer solar cell by inkjet printing of active layer

The invention relates to a method for preparing a flexible polymer solar cell by inkjet printing of an active layer, comprising the steps of carrying out spin coating on a hole transporting layer on an anode layer of a flexible substrate, printing the active layer, depositing an electron transporting layer and carrying out vacuum evaporating on an A1 electrode as a cathode. Innovative points are prepared by inkjet printing of the active layer. The method of the invention improves the controllability and smoothness of the thickness of thin films and enhances the compactness and uniformity of the thin films simultaneously. Contract tests prove that commonly by preparing the active layer by the method of spin coating, the photoelectric conversion efficiency is 0.51% while the photoelectric conversion efficiency of a cell device prepared by inkjet printing of the active layer reaches 2.2%, which is increased by more than 3 times compared with the contrast embodiment. From the above, the method ...

Flexible polymer solar battery of anode layer of metal grid

The invention relates to a flexible polymer solar battery of a metal grid anode layer, which comprises a flexible substrate, an anode layer, a hole transport layer, an active layer, an electron transfer layer and an Al electrode cathode and is characterized in that the anode layer is made from one or more of composition metal wire grid materials of Ag, Cu, and Ni. In the solar battery, a silver, copper and nickel (Ag: Cu: Ni) metal grid/LiF combined electrode is used as the anode; compared with the battery prepared by a common flexible substrate ITO electrode, the flexible solar battery prepared by taking P3HT/PCB as the active layer can show up better performance; after a layer of lithium fluoride (LiF) layer with the thickness of 2nm is added between the Ag: Cu: Ni metal grid and the polythiophene derivative doped polystyrolsulfon acid (PEDOT: PSS) layer, the film formation of PEDOT: PSS on the surface of the anode is improved, the balance between the hole and the electron transport is ...

Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature

The invention discloses a preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature. The method comprises the following steps: first, placing the rinsed substratum on the substrate plate of the chemical vapor deposition device strengthened by helicon plasma, and then vacuumizing the reaction chamber of the chemical vapor deposition device strengthenedby helicon plasma, and rinsing the substrate plate and the internal walls of the chamber by hydrogen plasma; then, reheating the substrate plate and inflating reaction gas into the reaction chamber to adjust the air pressure, and applying magnetic field to the plasma production chamber of the chemical vapor deposition device strengthened by helicon plasma, and turning on the RF power supply to start the deposition of carborundum films to obtain the carborundum films sample; finally, cooling the chamber off to room temperature under the protection of hydrogen and taking out the sample from thechamber ...

Transition metal oxide p-n hetero-junction and preparation method thereof

The invention provides a transition metal oxide p-n heterojunction composed of a p-type conducting material Bi2Sr2Co2O8 and an n-type conducting material doped Sr1-xNbxTiO3. In the method, a layer of high-quality thermoelectrical thin film of the p-type conducting material Bi2Sr2Co2O8 is epitaxially grown on a n-type conducting doped Sr1-xNbxTiO3 substrate by a pulsed laser deposition method to form the brand-new transition metal oxide p-n heterojunction. The heterojunction has excellent diode rectification characteristic within a very broad temperature range including room temperature and below the room temperature, and can observe the characteristic that junction resistance is modulated by current and the like; the characteristics prove that the novel oxide p-n heterojunction has application prospects in the aspects of electronics, electronic technology and electronic engineering.

Method for preparing flexible polymer solar cell by inkjet printing of active layer

The invention relates to a method for preparing a flexible polymer solar cell by inkjet printing of an active layer, comprising the steps of carrying out spin coating on a hole transporting layer on an anode layer of a flexible substrate, printing the active layer, depositing an electron transporting layer and carrying out vacuum evaporating on an A1 electrode as a cathode. Innovative points are prepared by inkjet printing of the active layer. The method of the invention improves the controllability and smoothness of the thickness of thin films and enhances the compactness and uniformity of the thin films simultaneously. Contract tests prove that commonly by preparing the active layer by the method of spin coating, the photoelectric conversion efficiency is 0.51% while the photoelectric conversion efficiency of a cell device prepared by inkjet printing of the active layer reaches 2.2%, which is increased by more than 3 times compared with the contrast embodiment. From the above, the method ...

C-axis oriented BiCuSeO-based oxide thermoelectric film and preparation method thereof

The invention discloses a c-axis oriented BiCuSeO-based oxide thermoelectric film. The chemical expression of the c-axis oriented BiCuSeO-based oxide thermoelectric film is Bil<1-x>ACuSeO, wherein A indicates Mg, Ca, Sr, Ba, Pb, Ag and Na, and x is greater and equal to 0 and is smaller than and equal to 0.2. The prepareation method of the c-axis oriented BiCuSeO-based oxide thermoelectric film comprises the following steps: 1), weighing materials according to an atom mole stoichiometric ratio, and grinding in a ball mill to obtain a mixed material; 2), pressing the mixed material to form a wafer; 3), sintering the wafer to obtain a polycrystalline ceramic target material; 4), placing the target material in a PLD cavity, and growing a c-axis oriented thermoelectric film on a monocrystalline substrate through a pulse laser deposition technology; and 5), controlling the pressure intensity of the PLD cavity to be 10<-3> to 10 <-4> Pa, and obtaining the BiCuSeO-based oxide thermoelectric ...

Quantum dot modified nano titanium dioxide emulsion and preparation method thereof

The invention discloses a preparation method of a quantum dot modified nano titanium dioxide emulsion. The preparation method comprises the following steps: slowly dropwise adding titanium tetrachloride into deionized water to obtain a titanium dioxide precursor solution, then respectively adding a quantum dot positive ion precursor and a quantum dot negative ion precursor and stirring until the quantum dot positive ion precursor and the quantum dot negative ion precursor are all dissolved; and adjusting a pH value to 7-9 by ammonia water while a sediment is generated, performing vacuum filtration to obtain a filter cake, cleaning the filter cake by deionized water, then adding carboxylic acid, an emulsifying agent and deionized water for pulping, then stirring for 10-80 hours to obtain a transparent complex solution, and heating and reflowing the obtained transparent complex solution to obtain the quantum dot modified nano titanium dioxide emulsion. The preparation method disclosed by ...

Medicament for treating renal colic and preparation method thereof

The invention discloses a medicament for treating renal colic and a preparation method thereof, belonging to the field of traditional Chinese medicines. The medicament comprises the following effective components: herb of paniculate spotflower, polygala, cyclocarya paliurus, gastrodia elata, tremella, gaultheria yunnanensis, osbeckia chinensis, turmeric, herba aristolochiae, Chinese yam, common cnidium fruit, peperomia blanda, rubus parvifolius, radix angelicae pubescentis, lichen of parmelia saxitilis and rust-coloured crotalaria herb with root. The medicament disclosed by the invention has the efficacies of clearing away heat, causing diuresis, promoting qi to activate blood, dispelling wind, eliminating dampness, warming the kidneys and tonifying yang, can be used for relieving pain, improving the immunity of organisms, promoting renal function recovery, has a remarkable treatment effects on symptoms, such as nausea and vomiting, drip sweat, pale complexion and jactitation caused by ...

Methods and apparatus for modifying a backup data stream including a set of validation bytes for each data block to be provided to a fixed position delta reduction backup application

Methods and apparatus for modifying a data stream of backup data to be provided to a fixed position delta reduction backup method are disclosed. When the data stream is received, at least a portion of the data stream is parsed into a plurality of data blocks and a plurality of sets of validation bytes, wherein each of the plurality of data blocks corresponds to one of the plurality of sets of validation bytes. One or more modified data streams are then generated such that the plurality of data blocks are separate from the plurality of sets of validation bytes.

P-n heterojunction optical detector

The invention provides a p-n heterojunction optical detector, which belongs to the technical field of film optical detectors. To solve the technical problem, the invention provides the p-n heterojunction optical detector of which a layer of misfit-layered cobalt oxide film is epitaxially grown on an Nb-doped SrTiO3 monocrystal substrate. The technical scheme of the invention comprises that: the optical detector consists of the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film; the misfit-layered cobalt oxide film is epitaxially grown on the Nb-doped SrTiO3 monocrystal substrate by adopting pulsed laser deposition technology or metal-organic deposition technology; the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film are respectively provided with an electrode which is deposited on the substrate or film by thermal evaporation, magnetron sputtering or pulsed laser deposition technology; and the two electrodes are respectively connected ...

P-n heterojunction optical detector

The invention provides a p-n heterojunction optical detector, which belongs to the technical field of film optical detectors. To solve the technical problem, the invention provides the p-n heterojunction optical detector of which a layer of misfit-layered cobalt oxide film is epitaxially grown on an Nb-doped SrTiO3 monocrystal substrate. The technical scheme of the invention comprises that: the optical detector consists of the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film; the misfit-layered cobalt oxide film is epitaxially grown on the Nb-doped SrTiO3 monocrystal substrate by adopting pulsed laser deposition technology or metal-organic deposition technology; the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film are respectively provided with an electrode which is deposited on the substrate or film by thermal evaporation, magnetron sputtering or pulsed laser deposition technology; and the two electrodes are respectively connected ...

Methods and apparatus for modifying a backup data stream including a set of validation bytes for each data block to be provided to a fixed position delta reduction backup application

Methods and apparatus for modifying a data stream of backup data to be provided to a fixed position delta reduction backup method are disclosed. When the data stream is received, at least a portion of the data stream is parsed into a plurality of data blocks and a plurality of sets of validation bytes, wherein each of the plurality of data blocks corresponds to one of the plurality of sets of validation bytes. One or more modified data streams are then generated such that the plurality of data blocks are separate from the plurality of sets of validation bytes.

Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films

The invention discloses a method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films, comprising the following steps: placing a rinsed substrate on the substrate plate of the magnet-controlled target sputtering device; then vacuumizing the reaction chamber of the magnet-controlled target sputtering device and cleansing the substrate plate and the walls ofthe reaction chamber with argon plasma; reheating the substrate plate and inflating the reaction chamber with reaction gas and adjusting the air pressure; turning on the power of the sputtering device to start the deposit of the amorphous silicon nitride films until the specimen of the amorphous silicon nitride films are obtained. Finally, the specimen can be obtained with the protection of hydrogen to complete the deposition of the amorphous silicon nitride films under room temperature. The invention can make use of the sputtering deposition technology of target magnet control reaction and deposit ...

IMITATION WOOD FROM CORN AND SORGHUM STALK

Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films

The invention discloses a method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films, comprising the following steps: placing a rinsed substrate on the substrate plate of the magnet-controlled target sputtering device; then vacuumizing the reaction chamber of the magnet-controlled target sputtering device and cleansing the substrate plate and the walls of the reaction chamber with argon plasma; reheating the substrate plate and inflating the reaction chamber with reaction gas and adjusting the air pressure; turning on the power of the sputtering device to start the deposit of the amorphous silicon nitride films until the specimen of the amorphous silicon nitride films are obtained. Finally, the specimen can be obtained with the protection of hydrogen to complete the deposition of the amorphous silicon nitride films under room temperature. The invention can make use of the sputtering deposition technology of target magnet control reaction and deposit ...

Capital construction standard panel

The utility model relates to a panel, in particular to capital construction standard panel, including support body and panel body, the panel body is through rotatable the installing on the support body of a pivot, the support body openly sets up the symmetry and sets up the fixed frame of four rectangles, the frame of fixed frame can be installing on the panel body of 90 degrees upsets, set up an extension spring between each frame and the panel body, the panel body back is dull and stereotyped, the bolt is installed to panel body one side upper end, the installation of homonymy lower extreme is the bolt down, the support body upper portion that corresponds sets up a jack, with last bolt, another side that the bolt is relative down is close to last lower extreme and sets up the pinhole respectively, the support body lower part that corresponds sets up sells with pinhole complex T shape. The utility model discloses can make things convenient for quick changing and demonstrate the file, use ...

High-efficiency polymer solar cell panel and manufacturing method thereof

The invention discloses a high-efficiency polymer solar cell panel. The high-efficiency polymer solar cell panel structurally comprises a glass substrate, an FTO anode layer, a mesoporous titanium dioxide nanolayer, a polymer active layer and an aluminum cathode layer sequentially from top to bottom. The polymer active layer is composed of P3HT and PCBM according to the mass ratio of 1:1. The invention further discloses a manufacturing method of the high-efficiency polymer solar cell panel. The manufacturing method of the high-efficiency polymer solar cell panel includes the steps of manufacturing mesoporous titanium dioxide sizing agents, manufacturing polymer active materials, cleaning the FTO glass substrate, coating the FTO glass substrate with the mesoporous titanium dioxide nanolayer in a spinning mode, coating the mesoporous titanium dioxide nanolayer with the polymer active layer in a spinning mode and plating the polymer active layer with the aluminum cathode layer in an evaporation ...

Optical image processor and optical image processing method

The invention provides an optical image processor and an optical image processing method. The optical image processor comprises a 4f coherent imaging system, a plate electrode, a first light source and a second light source. The 4f coherent imaging system is formed by sequentially arranging a tested object, a first lens, a photorefractive crystal, a second lens and a CCD. The plate electrode is used for applying an electric field to the photorefractive crystal in the direction of the optical axis. The first light source is used for providing a first light beam for irradiating the tested object in an incident mode. The second light source is used for providing a second light beam and the second light beam is split so that soliton light and bias light can be formed. The soliton light is focused through the first lens and irradiates the photorefractive crystal in an incident mode. The bias light irradiates the photorefractive crystal in an incident mode. According to the optical image processor ...

N type cadmium oxide thermoelectric material and preparation method thereof

The invention discloses an N type cadmium oxide thermoelectric material. The N type cadmium oxide thermoelectric material is crucially characterized in that the chemical molecular formula of the N type cadmium oxide thermoelectric material is Cd<1-x>AxO or CdO, wherein A represents Mg, Ca, Zn, Ba and Pr, and x is more than or equal to 0 and less than or equal to 0.15; the preparation method of the N type cadmium oxide thermoelectric material comprises the following steps: 1) weighing CdO or CdO and an oxide or single substance of element A according to an atom mole stoichiometric ratio, evenly mixing in an agate tank to obtain a needed material; 2) performing ball milling to the material to obtain a precursor powder; 3) drying the precursor powder, and pressing into circular discs; and 4) sintering the circular discs through the traditional solid-phase reaction sintering technology, thus obtaining the N type cadmium oxide thermoelectric material. The Cd<1-x>AxO ceramic material obtained ...

Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film

The invention discloses a preparation method of a P-type transparent and conductive cobalt oxide metal nano-composite film, and belongs to the technical field of functional film materials. The method comprises the steps of A, preparing a ceramic target, B, performing pulsed laser deposition (PLD) on a film and C, performing annealing treatment, wherein in the step A, a cobalt oxide ceramic target is sintered by using a high-temperature solid phase reaction method; in the step B, a fan-shaped metal sheet is attached to the cobalt oxide ceramic target and prepared into a composite target, the composite target is placed in a pulsed laser deposition cavity, and a c-axis orientated cobalt oxide metal nano-composite prefabricated film grows on a single-crystal substrate through a pulsed laser deposition technology; and in the step C, the c-axis orientated transparent and conductive cobalt oxide metal nano-composite film is obtained. The P-type transparent and conductive cobalt oxide metal nano-composite ...

Multiple metal ion doped nano ZnO transparent photocatalyst emulsion and preparation method thereof

The invention discloses a multiple metal ion doped nano ZnO transparent photocatalyst emulsion. The emulsion contains 0.05-50wt% of multiple metal ion doped nano ZnO, 0.1-10wt% of an emulsifier, 0.5-50wt% of carboxylic acid and the balance of water; molar ratio of metal ions and ZnO in the multiple metal ion doped nano ZnO is 0.1-10: 100; the metal ions comprise two or more selected from Cu<2+>, V<5+>, Fe<3+>, La<3+>, Cr<3+> and Mn<2+>. The invention also discloses the preparation method of the multiple metal ion doped nano ZnO transparent photocatalyst emulsion. The method comprises the following steps: a, adding carboxylic acid and emulsifier in the multiple metal ion doped nano ZnO, and then adding deionized water and beating; stirring at room temperature by using a magnetic rotary agitator for 20-70 h to obtain a transparent complex solution; and b, heating, stirring and refluxing the transparent complex solution at 70 to 100 DEG C for 0.5-20 h to decompose the complex, so as to obtain ...

Flexible polymer solar battery of anode layer of metal grid and preparation method

The invention relates to a flexible polymer solar battery of an anode layer of a metal grid, which comprises a flexible substrate, an anode layer, a hole transport layer, an active layer, an electron transfer layer and an Al electrode cathode and is characterized in that the anode layer is made from one or more of composition metal wire grid materials of Ag, Cu, and Ni. In the solar battery, a silver, copper and nickel (Ag: Cu: Ni) metal grid/LiF combined electrode is used as the anode; compared with the battery prepared by a common flexible substrate ITO electrode, the flexible solar battery prepared by taking P3HT/PCB as the active layer can show up better performance; after a layer of lithium fluoride (LiF) layer with the thickness of 2nm is added between the Ag: Cu: Ni metal grid and the polythiophene derivative doped polystyrolsulfon acid (PEDOT: PSS) layer, the film formation of PEDOT: PSS on the surface of the anode is improved, the balance between the hole and the electron transport ...

Helicon wave plasma enhanced chemical vapor deposition unit

The invention provides a helicon wave plasma enhanced chemical vapor deposition unit, belonging to the technical field of plasma processing units, in order to achieve the stability and effective feed-in of radio-frequency power and effectively prevent the mode of the helicon wave plasma from hopping. The technical scheme of the invention is as follows that: the helicon wave plasma enhanced chemical vapor deposition unit comprises an external high-voltage power supply, an antenna for exciting the helicon wave plasma, an insulating dielectric tube, a high-vacuum cavity, a coil and an auxiliary coil, wherein the insulating dielectric tube is provided with an air inlet and an inlet air controlling device, and the high-vacuum cavity is provided with a ring-shaped nozzle and a heater; a self-excited radio-frequency oscillating circuit is connected between the external high-voltage power supply and the antenna for exciting the helicon wave plasma. By coupling the radio-frequency electromagnetic ...

Imaging method for photothermal sensitive material

The imaging method with photothermal sensitive material includes the following steps: 1. preparing photothermal sensitive material through coating photosensitive material for recording photo information and colorizing colorless dye inside microcapsule and setting color developer and the microcapsule unit on carrier to form the printing paper of photothermal sensitive material; 2. forming latent image recording photo information through irradiating the printing paper with light of matching wavelength; and 3. developing through heating the printing paper from the last step to develop and form image. The present invention produces no waste, has no environmental pollution, and possesses huge application potential in photo information record, image storage and reproducing.

Misfit-layered cobalt oxide pyroelectric thin-film photodetector

The invention provides a misfit-layered cobalt oxide pyroelectric thin-film photodetector, belongs to the technical field of thin-film photodetector equipment, and solves the technical problem of providing the photodetector which is manufactured by growing a layer of c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film on a beveled oxide monocrystal substrate. The photodetector comprises a technical scheme that the photodetector consists of the beveled oxide monocrystal substrate and the c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film, wherein the c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film grows on the beveled oxide monocrystal substrate by adopting pulsed laser deposition technology or metal organic deposition technology; the thin-film surface is provided with two electrodes which are deposited on the thin-film surface by using thermal evaporation, magnetron sputtering or pulsed laser deposition technology; and the two electrodes ...

Transition metal oxide p-n hetero-junction and preparation method thereof

The invention provides a transition metal oxide p-n heterojunction composed of a p-type conducting material Bi2Sr2Co2O8 and an n-type conducting material doped Sr1-xNbxTiO3. In the method, a layer ofhigh-quality thermoelectrical thin film of the p-type conducting material Bi2Sr2Co2O8 is epitaxially grown on a n-type conducting doped Sr1-xNbxTiO3 substrate by a pulsed laser deposition method to form the brand-new transition metal oxide p-n heterojunction. The heterojunction has excellent diode rectification characteristic within a very broad temperature range including room temperature and below the room temperature, and can observe the characteristic that junction resistance is modulated by current and the like; the characteristics prove that the novel oxide p-n heterojunction has application prospects in the aspects of electronics, electronic technology and electronic engineering.

Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature

The invention discloses a method for rapidly depositing a hydrogenated amorphous silicon solar battery thin film at low temperature, which comprises the following steps of: firstly, placing a cleaned substrate on a substrate platform of an opposite target magnetron sputtering device; then vacuumizing a reaction chamber of the opposite target magnetron sputtering device and cleaning the substrate platform of the opposite target magnetron sputtering device and the wall of the reaction chamber by argon plasma; heating the substrate platform; charging a reaction gas into the reaction chamber and adjusting air pressure; starting a sputtering power supply and depositing the amorphous silicon thin film till an amorphous silicon thin film sample is obtained; finally cooling to room temperature under the protection of hydrogen, taking out the sample and finishing the deposition of the hydrogenated amorphous silicon thin film. The invention can rapidly deposit the hydrogenated amorphous silicon thin ...