P-n heterojunction optical detector
Technical Field The invention relates to a use of the wrong matches the levelcobalt oxidation compound/doped strontium titanate of the heterojunction p-n optical detector, which belongs to the technical field of thin film optical detector. Background Art In recent years, by oxide heterojunction of making photovoltaic effect attention optical detector, and the traditional semiconductor material compared with the photon detector is made, according to the oxide heterojunction photovoltaic effect light detector made of low cost, good signal-to-noise ratio, do not need refrigeration, and can be according to the selection of different forbidden band width of the oxide material to make different spectral response range of the light detector. To bismith strontium cobalt oxygen (Bi2 Sr2 Co2 Oy) and calcium cobalt oxygen (Ca3 Co4 O9) wrong matches the levelcobalt oxidation represented in recent years new discovery is a P-type conductive oxide thermoelectric material, a hole concentration at room temperature for about 1020 -1021/cm3, and n type conductive doped strontium titanate (Sr1-x Nbx TiO3, 0.01 x≥ 0.004)) very close to the concentration of electrons in the. If the single-crystal strontium titanate doped epitaxial growing a layer on the substrate and cobalt-oxygen bismith strontiumcalcium cobalt oxygen thin film, to form a kind of new oxide p-n heterojunction. On the heterojunction irradiated, according to the heterojunction p-n photovoltaic effect it is able to directly produce the voltage signal, can be produced using the principle bismith strontium cobalt-oxygen (calcium-cobalt-oxygen)/ mixes the niobium too sour strontium heterogamous ties the light detector. Furthermore, the room temperature and cobalt-oxygen bismith strontium only the forbidden band width of the calcium cobalt oxygen 0.6eV and 1.0ev, therefore, by utilizing bismith strontium cobalt oxygen (calcium-cobalt-oxygen)/ doped strontium titanate heterojunction can be responsive to the light detector from the ultraviolet to infrared is very wide-band light. However, so far, does not see the report on the detector. Content of the invention The invention the technical problem to be solved is to provide a single crystal of strontium titanate doped epitaxial growth on the substrate a layer to compound thin film cobalt oxidationwrong matches the level p-n heterogamous ties the light detector. Solve the above technical problem the technical scheme is: A heterogeneous p-n ties the light detector, which is composed of a doped strontium titanate monocrystalline substrates and wrong matches the levelcobalt oxidation a compound thin film, the compound thin film cobalt oxidationwrong matches the level pulse laser deposition technique or metal organic deposition technology strontium titanate doped epitaxial growth on the single crystal substrate, the doped strontium titanate monocrystalline substrates and wrong matches the levelcobalt oxidation compound thin film using a thermal evaporation, magnetron sputtering or pulsed laser deposition technology to deposit the substrate and thin-film electrodes on the surface of, respectively the two electrodes through the electrode lead wire is connected with the output terminal of the voltage signal. The above-mentioned p-n heterogamous ties the light detector, said wrong matches the levelcobalt oxidation compound thin film is a calcium-cobalt-oxygen or bismith strontium cobalt-oxygen thin-film, thin film having a thickness of 20 nm -200 nm. The above-mentioned p-n heterogamous ties the light detector, the two electrode is metal Pt, Au, Ag, or Al In preparation. The above-mentioned p-n heterogamous ties the light detector, the electrode lead wire with one end of a conductive silver ink adhered to the two directly on the electrode on the electrode or tin soldering, the electrode lead as the Au, Ag or the fine conductors cu, the diameter is 0.01-0.2 mm. The above-mentioned p-n heterogamous ties the light detector, the two electrodes are connected in parallel and one of the lead wire with a value of 0.1-50 the the resistance of the the. The use of this invention offers the wrong matches the levelcobalt oxidation compound/doped strontium titanate p-n heterojunction of the advantages of light detector: preparation is simple, low cost, does not require refrigeration, with no need of any auxiliary power supply and electronic device, the response band-width. Description of drawings Figure 1 is a structure diagram of the heterogeneous p-n ties the light detector of the present invention. Figure captions are as follows: 1, doped strontium titanate single-crystal substrate 2, wrong matches the levelcobalt oxidation compound thin film 3, 1st electrode 4, 2nd electrode 5, the electrode lead wire 1st 6, 2nd electrode lead 7, parallel resistance Figure 2 for: Bi2 Sr2 Co2 O8/Sr0.99 Nb0.01 TiO3 heterogamous ties the light detector the XeCl laser output laser (wavelength: 308 nm, pulse width: 25ns) in response to the voltage of the picture signal. Figure 2 illustrated in the measurement of the optical detector is a structure diagram. Figure 3 for: Bi2 Sr2 Co2 O8/Sr0.99 Nb0.01 TiO3 heterogamous ties the light detector parallel 50 after the ohmic resistance of the XeCl laser output laser (wavelength: 308 nm, pulse width: 25ns) in response to the voltage of the picture signal. Figure 4 as:Ca3 Co4 O9/Sr0.993 Nb0.007 TiO3 heterogamous ties the light detector the XeCl laser output laser (wavelength: 308 nm, pulse width: 25ns) in response to the voltage of the picture signal. Figure 5 as:Bi2 Sr2 Co2 O8/Sr0.996 Nb0.004 TiO3 heterogamous ties the light Nd detector to: YAG laser output laser (wavelength: 1064 nm, pulse width: 25ps) in response to the voltage of the picture signal. Mode of execution Figure 1 in the display, the invention is a doped strontium titanate single crystal substrate 1 using a known pulse laser deposition technology or metal organic deposition technique to grow a layer of epitaxy wrong matches the levelcobalt oxidation compound thin film 2. Doped strontium titanate monocrystalline substrates 1 niobium doping quantity is in the range of 0.4%-1% between ; wrong matches the levelcobalt oxidation compound thin film 2 can be made of calcium-cobalt-oxygen or bismith strontium cobalt-oxygen thin-film, thin-film thickness is 20 nm -200 nm. In the doped strontium titanate monocrystalline substrates 1 and wrong matches the levelcobalt oxidation compound thin film 2 on each with an electrode, the electrode material can choose the metal Pt, Au, Ag, or Al In, using the known heat evaporation, magnetron sputtering or pulsed laser deposition technology to deposit in the doped strontium titanate monocrystalline substrates 1 and wrong matches the levelcobalt oxidation compound thin film 2 surface. Two electrodes are respectively to 1st electrode 3 and 2nd electrode 4, 1st electrode 3 is arranged in the wrong matches the levelcobalt oxidation compound thin film 2 surface, 2nd electrode 4 is arranged on the doped strontium titanate monocrystalline substrates 2 on. 1st electrode 3, 2nd electrode 4 is respectively connected with the 1st electrode lead 5, 2nd electrode lead wire 6 are connected, two electrode lead wires for one end of a conductive silver ink adhered to the two directly on the electrode on the electrode or tin soldering, the electrode lead wire can be made of Au, Ag or the fine conductors cu, the diameter is 0.01-0.2 mm. The other two electrode lead wires connected to the one end of the output end of the voltage signal, in order to improve the response of the detector speed, also can be in the output end of the two electrode is connected in parallel to a lead wire with a value of 0.1-50. is in parallel connection with the resistor 7. The following is the several embodiments of the invention. Embodiment 1: for the pulse width for 25ns of 308 nm XeCl excimer laser output laser detecting Bi2 Sr2 Co2 O8/Sr0.99 Nb0.01 TiO3 heterogamous ties the light detector. 1. The known pulsed laser deposition technology in Sr0.99 Nb0.01 TiO3 (001) epitaxial growth on the single crystal substrate a layer of a thickness of 100 nm of Bi2 Sr2 Co2 O8 thermoelectric thin film; 2. Using the known of the thermal evaporation method Bi2 Sr2 Co2 O8 thin film surface and Sr0.99 Nb0.01 TiO3 single crystal substrate prepared on two Ag electrode, the electrode diameter is 0.5 mm; 3. The conductive silver adhesive for a diameter of 0.1 mm of the two copper wires are respectively adhered as two silver electrode of the two electrodes on the lead; 4. The two electrode is connected to another end of the lead wire as an output voltage signal on an oscilloscope test end, the input impedance of the oscilloscope 1 milliohm gear; 5. The 500 trillion oscilloscope , with the above-mentioned Bi2 Sr2 Co2 O8/Sr0.99 Nb0.01 TiO3 thin film optical detector, measuring quasi-molecular XeCl laser (output wavelength of 308 nm, pulse width for 25ns) irradiation generated on the detector voltage signal output. Figure 2 is profile of oscilloscope the record 308 nm XeCl laser irradiation to the surface of the detector on the output voltage signal is generated. As can be seen, 1mJ can produce the laser energy as high as 820mV voltage signal, has very high detection sensitivity of; relatively slow speed of response of the detector, the rising edge time and semibreadth about 190 the and s 24ms. Embodiment 2: for the pulse width for 25ns of 308 nm XeCl excimer laser output laser detecting Bi2 Sr2 Co2 O8/Sr0.993 Nb0.007 TiO3 heterogamous ties the light detector. 1. With the embodiment 1 in the step 1-3; 4. Between the two electrode lead wires connected in parallel with a 50 ohm resistor; 5. With the embodiment 1 in the step 4-5; Figure 3 is profile of oscilloscope the record 308 nm XeCl laser irradiation to the surface of the detector on the output voltage signal is generated. As can be seen, since the connected in parallel with a small resistor, improving the speed of response of the detector, the signal rising edge time and semibreadth are respectively composed of embodiment 1 in the 190 s and 24ms to 23 the and s the 400 s. Embodiment 3: for the pulse width for 25ns of 308 nm XeCl excimer laser output laser detecting Ca3 Co4 O9/Sr0.993 Nb0.007 TiO3 heterogamous ties the light detector. 1. The known organic chemical solution deposition technology in Sr0.993 Nb0.007 TiO3 (001) epitaxial growth on the single crystal substrate a layer of a thickness of 300 nm of Ca3 Co4 O9 thermoelectric thin film; 2. With the embodiment 1 in the step 2-4; 5. The 500 trillion oscilloscope , with the above-mentioned Ca3 Co4 O9/Sr0.993 Nb0.007 TiO3 heterogamous ties the light detector, measuring quasi-molecular XeCl laser (output wavelength of 308 nm, pulse width for 25ns) is irradiated on the voltage signal output of the detector. Figure 4 is profile of oscilloscope the record 308 nm XeCl laser irradiation to the surface of the detector on the output voltage signal is generated. As can be seen, when the irradiation of laser energy on the membrane for 1mJ time, the amplitude of the output voltage signals as high as 108mV, the same detection sensitivity has very high; the output voltage of the detector time and the rising edge of the signal for the half the 110 s and 3ms. Embodiment 4: for the pulse width for 25ps Nd of: YAG laser output laser (output wavelength is 1064 nm) detecting Bi2 Sr2 Co2 O8/Sr0.996 Nb0.004 TiO3 heterogamous ties the light detector. 1. The known chemical solution deposition technology in Sr0.996 Nb0.004 TiO3 (001) a layer on the epitaxial monocrystalline silicon substrate to a thickness of 20 nm of Bi2 Sr2 Co2 O8 thermoelectric thin film; 2. Using the known magnetron sputtering method in Bi2 Sr2 Co2 O8 thin film surface and Sr0.996 Nb0.004 TiO3 substrate preparation two Au electrode, the electrode diameter is 0.3 mm; 3. Soldering tin for a diameter of 0.1 mm of the two Ag wire are respectively welded on the two Au as two electrodes on the electrode lead; 4. The two electrode is connected to another end of the lead wire as an output voltage signal on an oscilloscope test end, the input impedance of the oscilloscope 1 milliohm gear; 5. The 500 trillion oscilloscope , with the above-mentioned Bi2 Sr2 Co2 O8 thin film optical detector, measuring Nd: YAG laser (output wavelength is 1064 nm, pulse width for 25ps) is irradiated on the voltage signal output of the detector. Figure 5 is profile of recorded ondoscope Nd: YAG laser (25ps, 1064 nm) irradiation to the detector on the surface of the output voltage signal is generated. As can be seen, when the irradiated to the thin-film on the surface of the laser energy 1mJ time, the output voltage signal reaches 60mV, voltage time is the rising edge of the signal 40ns, semibreadth to 230ns, therefore, the detector can detect light of the infrared band of the relatively fast response speed. The invention set forth in the further embodiment is directed to clarify this heterogeneous p-n ties the light a method for preparing of the detector, but not to the scope of the present invention constitute any limitation. The invention provides a p-n heterojunction optical detector, which belongs to the technical field of film optical detectors. To solve the technical problem, the invention provides the p-n heterojunction optical detector of which a layer of misfit-layered cobalt oxide film is epitaxially grown on an Nb-doped SrTiO3 monocrystal substrate. The technical scheme of the invention comprises that: the optical detector consists of the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film; the misfit-layered cobalt oxide film is epitaxially grown on the Nb-doped SrTiO3 monocrystal substrate by adopting pulsed laser deposition technology or metal-organic deposition technology; the Nb-doped SrTiO3 monocrystal substrate and the misfit-layered cobalt oxide film are respectively provided with an electrode which is deposited on the substrate or film by thermal evaporation, magnetron sputtering or pulsed laser deposition technology; and the two electrodes are respectively connected with a voltage signal output end through electrode lead wires. The P-n heterojunction optical detector has the advantages of simple preparation, low cost, wide response bandwidth and no need of refrigeration or any auxiliary power source and electronic equipment. 1. A heterogeneous p-n ties the light detector, characterized in that the single crystal substrate by the doped strontium titanate (1) and wrong matches the levelcobalt oxidation compound thin film (2) composition, wrong matches the levelcobalt oxidation compound thin film (2) the pulse laser deposition technology or metal organic deposition technology in the doped epitaxial growth of the strontium titanate monocrystalline substrates (1) is, in the doped strontium titanate monocrystalline substrates (1) and wrong matches the levelcobalt oxidation compound thin film (2) using a thermal evaporation, magnetron sputtering or pulsed laser deposition technology to deposit the substrate and thin-film electrodes on the surface of, respectively the two electrodes through the electrode lead wire is connected with the output terminal of the voltage signal. 2. P-n heterogamous ties the light detector according to Claim 1, characterized in that the stated wrong matches the levelcobalt oxidation compound thin film (2) are calcium-cobalt-oxygen or bismith strontium cobalt-oxygen thin-film, thin film having a thickness of 20 nm -200 nm. 3. P-n heterogamous ties the light detector according to Claim 2, characterized in that said two electrode is metal Pt, Au, Ag, or Al In preparation. 4. P-n heterogamous ties the light detector according to Claim 3, characterized in that the electrode lead wire with one end of a conductive silver ink adhered to the two directly on the electrode on the electrode or tin soldering, the electrode lead as the Au, Ag or the fine conductors cu, the diameter is 0.01-0.2 mm. 5. P-n heterogamous ties the light detector according to Claim 4, characterized in that the two electrodes are connected in parallel and one of the lead wire with a value of 0.1-50 the the resistance of the the.