Polymer compound, positive resist composition and resist pattern formation method

POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD

Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).

POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND

PURPOSE: A positive resist composition is provided to form resist pattern without change of solubility. CONSTITUTION: A positive resist composition contains substrate component and acid generating agent component. The substrate component has enhanced solubility to alkali developer by acidic action. An acid generating component generates acid by light exposure. The substrate component contains polymer compound. COPYRIGHT KIPO 2010 ...

FLUORINE-CONTAINING COMPOUND

PROBLEM TO BE SOLVED: To provide a fluorine-containing compound useful as an additive for immersion exposure resist compositions. SOLUTION: Provided is a fluorine-containing compound represented by general formula (c0). Provided also is a fluorine-containing compound which is a compound having structural units represented by general formula (c0-1). COPYRIGHT: (C)2010,JPO&INPIT ...

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure. [Chemical Formula 1] ...

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY AND RESIST PATTERN FORMING METHOD USING THE SAME, AND FLUORINE-CONTAINING POLYMER COMPOUND

PROBLEM TO BE SOLVED: To provide a resist composition suitable for liquid immersion lithography, a resist pattern forming method using the resist composition, and a fluorine-containing polymer compound useful as an additive used in the resist composition. SOLUTION: The resist composition for liquid immersion lithography comprises a fluorine-containing polymer compound (C) which contains a group represented by general formula (c0-0) in a side chain and exhibits degradability in an alkali developer, a base component (A) whose solubility in an alkali developer changes under the action of an acid (other than the fluorine-containing polymer compound (C)), and an acid generator component (B) which generates an acid upon exposure to light. In the formula, R6 is a hydrogen atom or a monovalent hydrocarbon group; q is an integer of 0-2; and g is an integer of 1-4. COPYRIGHT: (C)2010,JPO&INPIT ...

UNDERLAYER FILM FORMING MATERIAL FOR HEAT LITHOGRAPHY, RESIST LAMINATE AND RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide an underlayer film forming material for heat lithography usable as a heat conversion object in heat lithography and consisting of organic materials, and a resist laminate and a resist pattern forming method using the underlayer film forming material for heat lithography. SOLUTION: The underlayer film forming material for heat lithography for forming an underlayer film for heat lithography between a support and a resist film contains an organic compound (A1) having film forming ability and a dye (B) which absorbs light of a wavelength of an exposure light source used in heat lithography. An underlayer film for heat lithography formed using the underlayer film forming material for heat lithography is an organic film having an absorbance of ≥0.26 per 100 nm film thickness at the wavelength of the exposure light source. COPYRIGHT: (C)2008,JPO&INPIT ...

RESIST COMPOSITION FOR IMMERSION EXPOSURE, A METHOD FIR FORMING RESIST PATTERN USING THE SAME, AND A FLUORINE-CONTAINING COMPOUND

PURPOSE: A resist composition for immersion exposure is provided to ensure good lithography characteristic and desirable hydrophobicity for immersion exposure which are properties required for a resist composition used for immersion exposure. CONSTITUTION: A resist composition for immersion exposure comprises (A) a base component changing solubility to alkali developer by action of acids, (B) an acid generator component generating acids by exposure, and (C) a fluorine-containing compound represented by chemical formula (1) with degradability of the alkaline developing solution. © KIPO 2009 ...

RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure. 113-. (canceled)15. The resist composition for immersion exposure according to claim 14 , wherein Rrepresents a linear group having an oxygen atom.16. The resist composition for immersion exposure according to claim 14 , wherein Rrepresents a linear group containing an ester bond.17. The resist composition for immersion exposure according to claim 14 , wherein Rrepresents a group represented by a formula -A-O—B— or formula -A-C(═O)—O—B— claim 14 , wherein each of A and B independently represents a divalent hydrocarbon group which may have a substituent.18. The resist composition for immersion exposure according to claim 14 , wherein said base dissociable group has a fluorine atom.20. The resist composition for immersion exposure according to claim 14 , which is a positive resist composition.21. The resist composition for immersion exposure according to claim 20 , wherein said base component (A) is a resin component (A1) that exhibits increased solubility in an alkali developing solution under action of acid.22. The resist composition for immersion exposure according to claim 21 , wherein said resin component (A1) comprises a structural unit (a1) derived from an acrylate ester having an acid dissociable claim 21 , dissolution inhibiting group.23. The resist composition for immersion exposure according to claim 22 , wherein said resin component (A1) further comprises a structural unit (a2) ...

FLUORINE-CONTAINING COMPOUND WHICH IS USEFUL AS AN ADDITIVE FOR A RESIST COMPOSITION FOR DIPPING EXPOSURE, A RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND A METHOD FOR FORMING RESIST PATTERNS

PURPOSE: A fluorine-containing compound is provided to ensure insolubility to alkaline developing solution due to a base-dissociative group, to produce phenolic -OH as hydrophilic group, and to increase solubility to the alkaline developing solution. CONSTITUTION: A fluorine-containing compound represented by a general formula of R^X-A_N-(OR^2)a, wherein, R^X represents an organic group, A_N represents a naphthalene ring that may have a substituent, R^2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A_N and said a R^2 groups contains a fluorine atom. © KIPO 2009 ...

COMPOUND, RADICAL POLYMERIZATION INITIATOR, POLYMER, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a resist composition, especially, a polymer useful as a resist composition for liquid immersion exposure, a compound useful as a radical polymerization initiator used for manufacturing the polymer, a radical polymerization initiator including the compound, a resist composition containing the polymer, and a method for forming a resist pattern. SOLUTION: The polymer has a group expressed by general formula (i-1) in at least one end of a main chain. The compound is expressed by general formula (I). The radical polymerization initiator includes the compound. The resist composition contains the polymer. In the formulas, R1 is alkylene group which may have a substituent group. R2 is an organic group which defines -O-R2 in the formulas as a base dissociable group to be dissociated by the action of an alkali developer. COPYRIGHT: (C)2010,JPO&INPIT ...

STRUCTURE AND ITS PRODUCTION METHOD

PROBLEM TO BE SOLVED: To provide a method for easily producing a fine structure including a metal layer, and to provide a structure produced by the production method. SOLUTION: At least a process where a coating film including a metallic film formed by electroless plating is formed on the surface of a mold provided on a base material, and a process where, as a part or the whole of the coating film left, a part or the whole of the mold is removed are performed, so as to form a structure on the base material, and the base material and the structure are separated. Alternatively, at least a process where a coating layer including a metallic layer formed by electroless plating is formed on the surface of a mold provided on a base material, and a process where a part of the coating film is removed are performed, so as to form a structure on the base material, and the base material and the structure are separated. COPYRIGHT: (C)2008,JPO&INPIT ...

RESIST COMPOSITION FOR A LIQUID IMMERSION LITHOGRAPHY, A RESIST PATTERN FORMATION METHOD AND A FLUORINE-CONTAINING COPOLYMER USEFUL AS ADDITIVES OF A LIQUID IMMERSION LITHOGRAPHY

PURPOSE: A resist composition for a liquid immersion lithography, a resist pattern formation method and a fluorine-containing copolymer are provided to become hydrophobic in immersion lithography and hydrophilic in development. CONSTITUTION: A resist composition for a liquid immersion lithography comprises a substrate component, a photoacid generator component, and a fluorine-containing copolymer. The substrate component has variable solubility to an alkaline developing solution by action of acids. The photoacid generator component generates acid by exposure. The fluorine-containing copolymer has a component represented by chemical formula 1. © KIPO 2009 ...

RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND FLUORINE-CONTAINING COMPOUND USEFUL AS ADDITIVE IN THE COMPOSITION

PURPOSE: A resist composition for immersion exposure, and a fluorine-containing compound useful as an additive in the composition are provided to obtain a novel fluorine-containing compound which is hydrophobic in case of immersion exposure and becomes hydrophilic in case of development. CONSTITUTION: A resist composition for immersion exposure comprises a base component whose solubility in an alkali developer by the action of an acid; an acid generator component which generates an acid by exposure; and a fluorine-containing compound which has a group represented by the formula 1 and contains at least one fluorine atoms, wherein Q is a monovalent hydrophilic group where one hydrogen atom is removed; and R1 is a C2 or more hydrocarbon group capable of containing a fluorine atom. © KIPO 2009 ...

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein R 1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(═O)— group in general formula (c-1); and R 2 represents an organic group having a fluorine atom.

COMPOUND, POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD

PROBLEM TO BE SOLVED: To provide a novel compound, a polymer compound, a positive resist composition containing the polymer compound, and a resist pattern formation method using the positive resist composition. SOLUTION: The compound is represented by formula (I). The polymer compound comprises structural units (a1) represented by formula (II). In formulae (I) and (II), R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently a hydrogen atom or a 1-5C alkyl group; n is an integer of 0-3; and Z is a 4-12C alicyclic group having a fluorine atom and/or a fluoroalkyl group as substituents. COPYRIGHT: (C)2008,JPO&INPIT ...

THERMOSETTING COMPOSITION, THERMOSET ARTICLE AND METHOD FOR FORMING PATTERN

PROBLEM TO BE SOLVED: To provide a thermosetting composition suitable for a thermoset article having enough etching resistance to a physical etching and having an excellent performance as a mask in pattern forming. SOLUTION: The invention relates to the thermosetting composition comprising a compound represented by formula (A-1), [A1 is an alicyclic group; X is a carboxy group; l is an integer of more than 2], and a compound represented by formula (A-2), [A2 is an alicyclic group; Y is an amino group; m is an integer of more than 2]. COPYRIGHT: (C)2008,JPO&INPIT ...

POSITIVE-TYPE RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY AND RESIST PATTERN-FORMING METHOD

PROBLEM TO BE SOLVED: To provide a new compound, to provide a positive-type resist composition using the compound, and having hydrophobicity suitable for liquid immersion lithography, and to provide a resist pattern-forming method. SOLUTION: The compound is represented by general formula (F1) [wherein, X is a group for inhibiting acid-dissociable dissolution, and having a fluorine atom; and n is an integer of 1-4; R50 is an n-valent organic group which may have a substituent; with the proviso that when n is 1, R50 is an organic group free from a polymerizable group]. The positive-type resist composition for the liquid immersion lithography contains (A) a base material component the solubility of which in an alkali developing solution is increased by the action of an acid, (B) an acid-generating agent component generating the acid by the exposure, and (F) the compound represented by general formula (F1). COPYRIGHT: (C)2009,JPO&INPIT ...

Chemically amplified positive resist composition for thermal lithography and method for forming resist pattern

A chemically amplified positive resist composition for thermal lithography to form a resist film which is used for the thermal lithography, wherein the resist film formed by using the chemically amplified positive resist composition for thermal lithography has an absorbance of 0.08 or greater per a film thickness of 100 nm at a wavelength of an exposure light source used in the thermal lithography.

RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND

POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To achieve excellent controllability of resist pattern size in a thermal flow process using a resist composition for use in ArF excimer laser lithography or the like. SOLUTION: A positive resist composition is provided which contains a resin component (A) and an acid generator component, wherein the component (A) contains a high molecular compound (A1) containing a (meth)acrylate constitutional unit (a0) having an acid-dissociable dissolution inhibiting group containing a tertiary alkyl group and a constitutional unit (a2) derived from an acrylic ester containing a lactone-containing cyclic group. COPYRIGHT: (C)2007,JPO&INPIT ...

Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.

FLUORINE-CONTAINING COMPOUND, IMMERSION EXPOSURE POSITIVE TYPE RESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD

PROBLEM TO BE SOLVED: To provide a new fluorine-containing compound, a hydrophobic positive type resist composition using the fluorine-containing compound suitable for use in immersion exposure, and a resist pattern-forming method using the positive type resist composition. SOLUTION: The new fluorine-containing compound is disclosed. The immersion exposure positive resist composition comprises a base material (A) which increases the solubility to an alkali developing solution by the action of an acid, an acid generating component (B) which generates an acid by exposure, and the new fluorine-containing compound (F). The resist pattern-forming method comprises a step of forming a resist film on a support by using the immersion exposure positive type resist composition, a step of subjecting the resist film to immersion exposure, and a step of subjecting the resist film to alkali development to form a resist pattern. COPYRIGHT: (C)2009,JPO&INPIT ...

STRUCTURAL BODY AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a fine structural body including a metal layer and the structural body manufactured by the manufacturing method. SOLUTION: This structural body is formed on a substrate 1 by performing at least a process for forming a coating film 21 including the metal layer formed by electroless plating on a surface of a template 11 provided on the substrate 1 and a process for removing a part or all of the template 11 in a state of leaving a part or all of the coating film 21. Alternatively, the structural body is formed on the substrate 1 by performing at least a process for forming the coating film 21 including the metal layer formed by electroless plating on the surface of the template 11 provided on the substrate 1 and a process for removing a part of the coating film 21. COPYRIGHT: (C)2008,JPO&INPIT ...

RESIST COMPOSITION FOR IMMERSION EXPOSURE WHICH IS HYDROPHOBIC IN CASE OF IMMERSION EXPOSURE AND IS HYDROPHILIC IN CASE OF DEVELOPMENT, AND FORMATION METHOD OF RESIST PATTERN USING IT

PURPOSE: A resist composition for immersion exposure, and a method for forming a resist pattern by using it are provided to prevent the deterioration of sensitivity, to improve a resist pattern shape and an aging stability in atmosphere, and to reduce the defect of a resist film. CONSTITUTION: A resist composition for immersion exposure comprises a [fluorine-containing polymer compound] having a unit having a base-dissociable group and a unit represented by the formula f2-1; a base component whose solubility in an alkali developer changes by the action of an acid; and an acid generator component which generates an acid by exposure, wherein R is H, a low molecular weight alkyl group, or a halogenated low molecular weight alkyl group. COPYRIGHT KIPO 2010 ...

FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a new fluorine-containing compound useful as an additive for a resist composition for immersion exposure, to provide a resist composition for immersion exposure including the fluorine-containing compound, and to provide a method of forming resist pattern using the resist composition for immersion exposure. SOLUTION: The resist composition for immersion exposure includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure to light, and the fluorine-containing compound (C) having a group represented by formula (c) and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a ≥2C hydrocarbon group which may have a fluorine atom. COPYRIGHT: (C)2009,JPO&INPIT ...

POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide a positive resist composition that has a hydrophobic property during exposure, has a characteristic in which the hydrophilic property of a resist film surface becomes high during development, and forms a favorable resist pattern, and to provide a resist pattern forming method. SOLUTION: This positive resist composition contains a substrate component (A) where solubility to an alkali developing solution is increased by the action of an acid, and an acid generator component (B) for generating an acid by exposure. The substrate component (A) contains a resin component (A1) having a constitutional unit (a0) including a group expressed by a general formula (a0-1). In general formula (a0-1), R2 is an organic group having a methyl group, an ethyl group or a fluorine atom, -O-R2 is a group dissociated by the action of an alkali developer, and a carbon atom of -C(=O)- is not directly bound to the main chain of the resin component (A1). COPYRIGHT: (C)2010,JPO&INPIT ...

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: [Chemical Formula 1] wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the -C(=O)- group in general formula (c-1); and R2 represents an organic group having a fluorine atom.

Polymer compound, positive resist composition and resist pattern formation method

A polymer compound comprising a structural unit (a0) represented by a following general formula (a0-1): (wherein R1 represents a hydrogen atom, a lower alkyl group, or a lower alkyl halide group; R5 represents an alkyl group; R6 represents an subsistent group selected from the group consisting of an alkyl group, an alcoxyl group, a halogen atom, and an alkyl halide group; e represent an integer of 0 to 5.) ...

POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER COMPOUND

PROBLEM TO BE SOLVED: To provide: a novel polymer compound; a positive resist composition containing the polymer compound; and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains a base material component (A) of increasing solubility in an alkali developing liquid by an action of an acid, and an acid-generator component (B). The base material component (A) contains a polymer compound (A1) having a constitutive unit expressed by general formula (a0-1) and a constitutive unit expressed by general formula (a0-2), wherein: in the general formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, R8 represents a divalent bonding group, and R7 represents an acid-dissociable dissolution inhibiting group; and in the general formula (a0-2), R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, R4 represents a ≥3C or more branched alkyl group, R5 and R6 ...

RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND

A resist composition for immersion exposure, including a base component that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component that generates acid upon exposure, and a fluorine-containing compound represented by a general formula (c-1) that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the C(O) group in general formula (c-1); and R2 represents an organic group having a fluorine atom.

POLYMER COMPOUND, POSITIVE-TYPE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To obtain a new polymer compound and a positive-type resist composition and to provide a method for forming a resist pattern using the positive-type resist composition. SOLUTION: The polymer compound has a constituent unit (a0) represented by general formula (a0-1) [wherein R1 is a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R5 is an alkyl group; R6 is a substituent group selected from the group consisting of an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group: and e is an integer of 0-5]. COPYRIGHT: (C)2009,JPO&INPIT ...

MANUFACTURING METHOD OF STRUCTURE AND STRUCTURE

PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a fine structure in a favorable figure and to provide a structure manufactured by the method. SOLUTION: The method comprises: forming a composite film comprising a coating film and an organic film or an inorganic film, on a substrate, through steps of (1) forming a coating film made of a metal layer or a metal oxide layer on the surface of a template disposed on the substrate, (2) forming an organic film or an inorganic film on the surface of the coating film and (3) removing a part of the organic film of the inorganic film and a part of the coating film; forming a second coating film made of a metal layer or a metal oxide layer on the surface of the composite film; forming an organic coating film on the substrate after the second coating film is formed; removing a part of the second coating film at a part of the side face of which is supported by the organic coating film; then removing the residual material ...

Method for manufacturing a structure

A method of manufacturing a structure, including forming a composite film composed of a coating film and an organic or inorganic film on top of a substrate by forming the coating film on the surface of a template provided on top of the substrate; forming the organic or inorganic film on the surface of the coating film, and removing a portion of the organic or inorganic film and a portion of the coating film; forming a second coating film on the surface of the composite film; forming an organic coating film on the substrate that covers the second coating film; removing a portion of the second coating film; and forming a structure composed of a metal or metal oxide later on the substrate by removing all residues left on the substrate except for the coating film and the second coating film.

POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R8 represents a divalent linking group; and R7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R4 represents a branched alkyl group of 3 or more carbon atoms; and each of R5 and R6 independently represents an alkyl group, wherein R5 and R6 are mutually bonded to form a ring).

Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.

POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide a positive resist composition capable of forming a resist pattern having reduced roughness and superior profile, and to provide a resist pattern forming method. SOLUTION: The positive resist composition contains a resin component (A), of which the alkali solubility increases under the action of an acid and an acid generator component (B) which generates acid upon exposure to light, wherein the resin component (A) comprises a constitutional unit (a0), represented by general Formula (a0) [wherein R denotes H, halogen, a lower alkyl group or a halogenated lower alkyl group; Y1 denotes an alicyclic group; Z denotes an acid-dissociable dissolution inhibiting group; a denotes an integer of 1-3, b denotes an integer of 0-2, a+b=1 to 3; and c, d and e, each independently denote an integer of 0-3] and a constitutional unit (a1) derived from an acrylic ester containing an acetal type acid-dissociable dissolution inhibiting group and does not correspond to the constitutional ...

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound

FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN

A fluorine-containing compound represented by a general formula (c-1) shown below: RX-AN-(OR2)a [Chemical Formula 1] (c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].

Resist composition for liquid immersion lithography, resist pattern formation method and fluorine-containing copolymer

A new fluorine-containing copolymer useful as an addition agent for liquid immersion lithography, a resist composition for liquid immersion lithography containing the fluorine-containing copolymer and a resist pattern formation method using the resist composition for liquid immersion lithography. The composition is a resist composition for liquid immersion lithography containing a base component (A) which changes solubility for an alkali developing liquid by an action of an acid, an acid generator component (B) which generate an acid by an exposure of light, and a fluorine-containing copolymer (C) having a constitutional unit (c1) represented by the following general formula (c1-1). In the formula, R1 is a hydrogen or a methyl; Q1 is a single bond or bivalent connecting group; A is an aromatic cyclic group; Q2 is a group formed from a monovalent hydrophilic group by eliminating a hydrogen atom; R2 is a base-dissociable group; a is 1 or 2; at least one of A and R2 has a fluorine atom.

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

A fluorine-containing compound represented by a general formula (c-1) shown below: [Chemical Formula 1] RX-AN-(OR2)a. . . (c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].

RESIST PATTERN FORMING METHOD BY HEAT LITHOGRAPHY

PROBLEM TO BE SOLVED: To provide a resist pattern forming method by heat lithography, by which a resist pattern of excellent profile can be formed. SOLUTION: The resist pattern forming method by heat lithography includes: a step of forming a resist film on a support using a resist composition; a step of selectively exposing "the resist film" or "a resist underlayer film on the support located near the resist film", both absorbing light of a wavelength of an exposing source used in the heat lithography, under the following conditions (1), (2) and (3); and a step of developing the resist film to form a resist pattern. (1) The exposure method: a DC line system, (2) laser drawing linear velocity: 0.5-6.0 m/s, and (3) laser power: 0.1-40 mW. COPYRIGHT: (C)2009,JPO&INPIT ...

Positive resist composition, method of forming resist pattern, and polymeric compound

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R8 represents a divalent linking group; and R7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R4 represents a branched alkyl group of 3 or more carbon atoms; and each of R5 and R6 independently represents an alkyl group, wherein R5 and R6 are mutually bonded to form a ring).

RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, RESIST PATTERN FORMING METHOD, AND FLUORINE-CONTAINING POLYMER COMPOUND

PROBLEM TO BE SOLVED: To provide a resist composition suitable for liquid immersion lithography, a resist pattern forming method using the resist composition, and a fluorine-containing polymer compound useful as an additive used in the resist composition. SOLUTION: The resist composition for liquid immersion lithography includes a fluorine-containing polymer compound (F) having a constitutional unit (f1) having a base-dissociable group and a constitutional unit (f2) represented by a specific structure, a base component (A) whose solubility in an alkali developer changes under the action of an acid, and an acid generator component (B) which generates an acid upon exposure to light. COPYRIGHT: (C)2010,JPO&INPIT ...

RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER

A resist composition for immersion exposure including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing copolymer (C) containing a structural unit (c1) represented by general formula (c1-1) shown below. In the formula, R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, Q1 represents a single bond or a divalent linking group, A represents an aromatic cyclic group that may have a substituent, Q2 represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A and the a R2 groups contains a fluorine atom.

RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND

PROBLEM TO BE SOLVED: To provide a resist composition suitable for immersion exposure, a method of forming a resist pattern using the resist composition, and a fluorine-containing compound useful as an additive used in the resist composition. SOLUTION: The resist composition for immersion exposure includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by general formula (c-1) that is decomposable in an alkali developing solution, wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that the polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the -C(=O)- group in the general formula (c-1); and R2 represents an organic group having a fluorine atom. COPYRIGHT: (C)2010,JPO ...

POLYMER COMPOUND, POSITIVE-TYPE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To obtain a new polymer compound and a positive-type resist composition and to provide a method for forming a resist pattern using the positive-type resist composition. SOLUTION: The polymer compound has a constituent unit (a0) represented by general formula (a0-1). COPYRIGHT: (C)2009,JPO&INPIT ...

FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, AND METHOD OF FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a new fluorine-containing compound useful as an additive for a resist composition for liquid immersion lithography, a resist composition for liquid immersion lithography containing the fluorine-containing compound, and a method of forming a resist pattern using the resist composition for liquid immersion lithography. SOLUTION: The fluorine-containing compound is represented by general formula (c-1), wherein RX represents an organic group; AN represents a naphthalene ring that may have a substituent; R2 represents a base dissociable group; and a represents 1 or 2, provided that at least one among AN and the a R2 groups contains a fluorine atom. COPYRIGHT: (C)2009,JPO&INPIT ...

POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND HIGH MOLECULAR COMPOUND

PROBLEM TO BE SOLVED: To provide a novel high molecular compound to be utilized as a base component of a positive resist composition, a positive resist composition containing the high molecular compound, and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains a base component (A) with the solubility to an alkaline developing solution increased by the action of an acid, and an acid generating agent component (B) for generating an acid by exposure. The base component (A) contains a high molecular compound (A1) having a constitutional unit (a0) represented by a specific structure and a constitutional unit (a1) represented by another specific structure. The ratio of the constitutional unit (a0) with respect to the total constitutional units composing the high molecular compound (A1) is 5-50 mole%. The ratio of the constitutional unit (a1) is higher than 10 mole%. The total of the constitutional units (a0) and (a1) is 90 mole ...

METHOD FOR FORMING FINE HOLLOW BODY AND FINE HOLLOW BODY

PROBLEM TO BE SOLVED: To provide a method for easily forming a fine hollow body by applying heat lithography and a fine hollow body formed by the method. SOLUTION: The method for forming a fine hollow body includes subjecting a resist laminate having a resist underlayer film which absorbs light of a wavelength of an exposing source used in heat lithography between a support and a resist layer to selective exposure with light of a wavelength which is absorbed in the resist underlayer film. The fine hollow body formed by the method for forming a fine hollow body is also provided. COPYRIGHT: (C)2009,JPO&INPIT ...

Polymeric compound, positive resist composition, and method of forming resist pattern

A polymeric compound including a structural unit (a0) represented by the structural unit (a0-1) shown below: (in the formula (a0-1), R 1 represents a hydrogen atom, a lower alkyl group, or a halogenated lower alkyl group; R 5 represents an alkyl group; R 6 represents a substituent selected from the group consisting of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group; and e represents an integer of 0 to 5).

AGENT FOR TREATMENT OF DEMENTIA

【課題】 全く新しいタイプの痴呆症治療薬を提供する。 【解決手段】 トリシクロイリシノンは、神経細胞増加活性と神経突起伸展活性を併せ持つため、全く新しいタイプの痴呆症治療薬として大変有用である。 【選択図】 なし

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

A resist composition for immersion exposure, including a base component that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component that generates acid upon exposure, and a fluorine-containing compound represented by a general formula (c-1) that is decomposable in an alkali developing solution: wherein R 1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(═O)— group in general formula (c-1); and R 2 represents an organic group having a fluorine atom.

Positive resist composition, method of forming resist pattern, and polymeric compound

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: [Chemical Formula 1] wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a hydrocarbon group of 2 or more carbon atoms Which may have a fluorine atom.

Positive resist composition, method of forming resist pattern, and polymeric compound

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R 1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R 8 represents a divalent linking group; and R 7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R 3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R 4 represents a branched alkyl group of 3 or more carbon atoms; and each of R 5 and R 6 independently represents an alkyl group, wherein R 5 and R 6 are mutually bonded to form a ring).

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R 1 represents a hydrocarbon group of 2 or more carbon atoms which may have a fluorine atom.

Positive resist composition, positive resist composition for thermal flow, and resist pattern forming method

Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y 1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).

Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern

A fluorine-containing compound represented by a general formula (c-1) shown below: [Chemical Formula 1] R X -A N -(OR 2 ) a   (c-1) [wherein, R X represents an organic group, A N represents a naphthalene ring that may have a substituent, R 2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A N and said a R 2 groups contains a fluorine atom].

POLYMERIC COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESITS PATTERN

A polymeric compound including a structural unit (a0) represented by the structural unit (a0-1) shown below: (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group, or a halogenated lower alkyl group; R5 represents an alkyl group; R6 represents a substituent selected from the group consisting of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group; and e represents an integer of 0 to 5).

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.

RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND

A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the -C(-O)- group in general formula (c-1); and R2 represents an organic group having a fluorine atom.

POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND HIGH MOLECULAR COMPOUND

【課題】新規な高分子化合物、該高分子化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いるレジストパターン形成方法の提供。 【解決手段】酸の作用によりアルカリ現像液に対する溶解性が増大する基材成分（Ａ）及び露光により酸を発生する酸発生剤成分（Ｂ）を含有し、前記基材成分（Ａ）が式（ａ０−１１）で表される構成単位（ａ０１１）と式（ａ０−１２）で表される構成単位（ａ０１２）とを有する高分子化合物（Ａ１）を含有するポジ型レジスト組成物。 【選択図】なし

RESIST COMPOSITION FOR THERMAL LITHOGRAPHY, RESIST LAMINATE, METHOD FOR FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a resist composition for thermal lithography in which a resist pattern with excellent profile can be formed by thermal lithography, to provide a resist laminate using the resist composition for thermal lithography, and to provide a method for forming a resist pattern using the resist laminate. SOLUTION: The resist composition for thermal lithography is used to form a resist film that does not react with light at the wavelength of an exposure light source, on an underlay film for thermal lithography absorbing light at the wavelength of the exposure light source used in thermal lithography. The resist composition is prepared by dissolving a base component (A) the solubility of which with an alkali developer changes by the effect of an acid and an acid generator component (B) generating an acid by the effect of heat, in an organic solvent (S) containing a polyalkyleneglycol-based solvent (S1). COPYRIGHT: (C)2009,JPO&INPIT ...

RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To form a resist pattern having an excellent shape. SOLUTION: A resist pattern forming method includes steps of: forming a resist film on a support by using a positive resist composition; exposing the resist film, performing post-exposure bake of the resist film at ≤80°C; and alkali-developing the resist film to form a resist pattern. The positive resist composition contains a base component (A) of which the solubility in an alkali developer increases under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the proportion of constitutional units having an acid-dissociable dissolution inhibiting group to all constitutional units constituting the base component (A) is 55-80 mol%. COPYRIGHT: (C)2010,JPO&INPIT ...

ANISOTROPIC FILM AND MANUFACTURING METHOD OF IT

PROBLEM TO BE SOLVED: To provide an anisotropic film excellent in anisotropy, workability and handling ease. SOLUTION: In this anisotropic film, a line-shaped nanostructure is disposed inside a resin film. The manufacturing method of the anisotropic film comprises processes for: forming a metal nanostructure on a base material; forming a resin film wherein the metal nanostructure is embedded; and peeling the resin film from the base material. The process for forming the metal nanostructure on the base material comprises at least a process for forming a coating film including a metal layer formed by electroless plating on the surface of a template arranged on the base material, and a process for removing a part or the whole of the template while leaving a part or the whole of the coating film remaining, or a process for removing a part of the coating film. The anisotropic film is formed by the manufacturing method of the anisotropic film. COPYRIGHT: (C)2009,JPO&INPIT ...

MANUFACTURING METHOD FOR FILM CONTAINING NANO-STRUCTURE, AND FILM CONTAINING NANO-STRUCTURE

PROBLEM TO BE SOLVED: To provide a method for facilitating manufacture of a film containing a fine nano-structure. SOLUTION: The manufacturing method for the film containing the nano-structure includes a process for forming a covering film 2 formed from a nano-structure formation material on a surface of a film-like base 1 having a recessed and protruded shape, and a process for removing a part or all of the covering film formed on a bottom face portion of a recessed portion and a top face portion of a protruded portion of the recessed and protruded shape of the covering film and forming a nano-structure 3. The manufacturing method for the film containing the nano-structure may further include a process for forming a resin layer 5 covering at least a part of the nano-structure on the surface of the base. The film containing the nano-structure is also provided manufactured according to the manufacturing method for the film containing the nano-structure. COPYRIGHT: (C)2010,JPO&INPIT ...

RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, RESIST PATTERN FORMING METHOD AND FLUORINE-CONTAINING COPOLYMER

PROBLEM TO BE SOLVED: To provide: a new fluorine-containing copolymer useful as an additive for a resist composition for liquid immersion lithography; a resist composition for liquid immersion lithography containing the same; and a resist pattern forming method. SOLUTION: The resist composition for liquid immersion lithography includes a base component (A) of which the solubility in an alkali developer changes by the action of an acid, an acid generator component (B) which generates an acid upon exposure to light, and the fluorine-containing copolymer (C) having a constitutional unit represented by general formula (c1-1). COPYRIGHT: (C)2009,JPO&INPIT ...

TRICYCLOILLICINONE INTERMEDIATE AND ITS PREPARATION METHOD

PROBLEM TO BE SOLVED: To provide an intermediate which is useful in preparing tricycloillicinone expected to be used as a treatment drug for Alzheimer's dementia; and a preparation method for the intermediate. SOLUTION: In the preparation method, a 1-(2-propynyl)-3-methylene-7,9-dioxa-bicyclo[4.3.0]non-5-ene-4-one compound represented by formula (2) is reacted with a metal carbonyl compound to give a 4,5-methylenedioxy-tricyclo[5.3.11.5.01.7]undec-3,7-diene-2,9-dione compound represented by formula (1). COPYRIGHT: (C)2005,JPO&NCIPI ...

CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR THERMAL LITHOGRAPHY, AND RESIST PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition for thermal lithography, capable of forming a resist pattern by thermal lithography, and to provide a resist pattern forming method using the chemically amplified positive resist composition for thermal lithography. SOLUTION: The chemically amplified positive resist composition for thermal lithography is for forming a resist film for thermal lithography, and the resist film, formed using the chemically amplified positive resist composition for thermal lithography, has absorbance of 0.08 or higher per 100 nm of the film thickness at the wavelength of the exposure light source, used in the thermal lithography. COPYRIGHT: (C)2008,JPO&INPIT ...

RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, RESIST PATTERN FORMING METHOD AND FLUORINE CONTAINED COPOLYMER

PROBLEM TO BE SOLVED: To provide a resist composition for liquid immersion lithography, a resist pattern forming method and a fluorine contained copolymer. SOLUTION: The resist composition for liquid immersion lithography contains base material component (A), changing in solubility to an alkali developing liquid by action of acid, an acid generating agent component (B) generating acid by exposure, and fluorine contained copolymer (C) having a component unit (c1) having a benzene ring which may have a substitution group in a side chain and a component unit (c2) having a naphthalene ring which may have a substitution group in a side chain. COPYRIGHT: (C)2009,JPO&INPIT ...

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein R 1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the -C(=O)- group in general formula (c-1); and R 2 represents an organic group having a fluorine atom.

Positive resist composition, positive resist composition for thermal flow process, and method for formation of resist patterns

A positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a high-molecular compound (A1) comprising constituent units (a0) represented by the general formula (a0) and constituent units (a2) derived from an acrylic ester having a lactone-containing cyclic group: (a0) wherein R is hydrogen, halogeno, lower alkyl, or halogenated lower alkyl; Y1 is an alicyclic group; Z is an acid-dissociable dissolution-inhibiting group having a tertiary alkyl group; a is an integer of 1 to 3 and b is an integer of 0 to 2 with the proviso that the sum of a and b is 1 to 3; and c, d and e are each independently an integer of 0 to 3.

Anisotropic film and method of manufacturing anisotropic film

An anisotropic film is disclosed in which a line-shaped nanostructure is disposed inside a resin film. Also disclosed is a method of producing an anisotropic film that includes: forming a metal nanostructure on a substrate, forming a resin film that embeds the metal nanostructure, and detaching the resin film from the substrate, wherein the step of forming the metal nanostructure on the substrate includes: at least, forming a coating film on the surface of a template provided on the substrate, the coating film including a metal layer formed by electroless plating; and removing a portion or all of the template while retaining a portion or all of the coating film, or removing a portion of the coating film. Also disclosed is an anisotropic film produced using the method of producing an anisotropic film.

Positive resist composition, method of forming resist pattern, and polymeric compound

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R 1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R 8 represents a divalent linking group; and R 7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R 3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R 4 represents a branched alkyl group of 3 or more carbon atoms; and each of R 5 and R 6 independently represents an alkyl group, wherein R 5 and R 6 are mutually bonded to form a ring).

Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound

A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.

Resist composition for liquid immersion lithography, method of forming resist pattern, and fluorine-containing copolymer

A resist composition for immersion exposure including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing copolymer (C) containing a structural unit (c1) represented by general formula (c1-1) shown below. In the formula, R 1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, Q 1 represents a single bond or a divalent linking group, A represents an aromatic cyclic group that may have a substituent, Q 2 represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group, R 2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A and the a R 2 groups contains a fluorine atom.

Compound and polymer compound

【課題】液浸露光用として好適なレジスト組成物、当該レジスト組成物を用いたレジストパターン形成方法、および当該レジスト組成物に用いる添加剤として有用な含フッ素化合物の提供。 【解決手段】一般式（ｃ−１−１）又は（ｃ−１−２）で表される化合物。式中、Ｒは水素原子、低級アルキル基、又はハロゲン化低級アルキル基であり；Ｘは酸解離性部位を有さない特定の有機基であり、Ａ ａｒｙｌ は置換基を有していてもよい芳香族環式基であり、Ｘ ０１ は単結合又は二価の連結基であり、Ｒ ２ はフッ素原子を有する有機基である。 ［化１］ 【選択図】なし

Method for manufacturing structure, and structure

A method of producing a structure, including: a composite film formation step that forms a composite film composed of a coating film and an organic film or inorganic film on top of a substrate by conducting Steps (1) to (3) below: (1) forming the coating film composed of a metal layer or a metal oxide layer on the surface of a template provided on top of the substrate, (2) forming the organic film or inorganic film on the surface of the coating film, and (3) removing a portion of the organic film or inorganic film and the coating film; a second coating film formation step that forms a second coating film composed of a metal layer or a metal oxide layer on the surface of the composite film; a coating step that, following formation of the second coating film, forms an organic coating film on the substrate that covers the surface of the substrate; a removal step that removes a portion of the second coating film, the side surfaces of which are at least partially supported by the organic coating film; and a structure formation step that forms a structure composed of a metal layer or metal oxide layer on the substrate by removing all residues left on the substrate except for the coating film and the second coating film.

Polymer compound, positive resist composition, and method for forming resist pattern

Disclosed is a polymer compound having a structural unit (a0) represented by the following general formula (a0-1). [chemical formula 1] (a0-1) [In the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R5 represents an alkyl group; R6 represents a substituent selected from the group consisting of alkyl groups, alkoxy groups, halogen atoms and halogenated alkyl groups; and e represents an integer of 0-5.]