14-12-2017 дата публикации
Номер: US20170358657A1
The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type buried layer ( 10 ), an STI ( 40 ), and a first N well ( 22 )/a first P well ( 24 ) which are formed successively from above a substrate; depositing and forming a high-temperature oxide film on the first N well ( 22 ) of the wafer; performing thermal drive-in on the wafer and performing photoetching and etching on the high-temperature oxide film to form a mini oxide layer ( 60 ); performing photoetching and ion implantation so as to form a second N well ( 32 ) inside the first N well ( 22 ) and second P wells ( 34 ) inside the first N well ( 22 ) and the first P well ( 24 ); then successively forming a gate oxide layer and a polysilicon gate ( 72 ), wherein one end of the gate oxide layer and the polysilicon gate ( 72 ) extends onto the second P well ( 34 ) inside the first N well ( 22 ), and the other end extends onto the mini oxide layer ( 60 ) on the second N well ( 32 ); and photoetching and injecting N-type ions between the mini oxide layer ( 60 ) and the STI ( 40 ) adjacent to the mini oxide layer ( 60 ) to form a drain electrode, and at the same time forming a source electrode ( 51 ) inside the second P well ( 34 ).
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