CORRELATED ELECTRON SWITCH PROGRAMMABLE FABRIC

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices. 123-. (canceled)24. A method , comprising:selectively connecting or disconnecting one or more portions of an integrated circuit to one or more other portions of the integrated circuit at least in part by selectively applying a programming voltage to one or more correlated electron switch devices to cause a transition in the one or more correlated electron switch devices from a first impedance state to a second impedance state, wherein the one or more correlated electron switch devices are respectively positioned between one or more electrodes of a first metallization layer and one or more electrodes of a second metallization layer.25. The method of claim 24 , wherein the selectively connecting or disconnecting the one or more portions of the integrated circuit to the one or more other portions of the integrated circuit comprises compensating for manufacturing errors in the integrated circuit.26. The method of claim 24 , wherein the selectively connecting or disconnecting the one or more portions of the integrated circuit to the one or more other portions of the integrated circuit comprises compensating for design errors in the integrated circuit.27. The method of claim 24 , wherein the selectively connecting or disconnecting the one or more portions of the integrated circuit to the one or more other portions of the integrated circuit comprises reducing power consumption in the integrated circuit at least in part by selectively disconnecting a supply voltage from the one or more portions of the integrated circuit.28. The method of claim 24 , wherein the selectively connecting or disconnecting the one or more portions of the integrated circuit to the one or more other portions of the integrated circuit comprises adjusting clock skew between specified portions of the integrated circuit.29. The method of claim 28 , wherein the integrated circuit comprises a ...

CORRELATED ELECTRON SWITCH PROGRAMMABLE FABRIC

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices. 1. An apparatus , comprising: a programmable fabric including:a plurality of metallization layers individually comprising a plurality of electrically conductive lines; andone or more correlated electron switches to selectively provide a lower impedance connection between one or more of the plurality of electrically conductive lines of the plurality of metallization layers and one or more other of the plurality of electrically conductive lines of the plurality of metallization layers.2. The apparatus of claim 1 , wherein the programmable fabric comprises a cross-point array claim 1 , wherein the electrically conductive lines of a first metallization layer are oriented approximately parallel with each other claim 1 , wherein the electrically conductive lines of a second metallization layer are oriented approximately parallel with each other claim 1 , and wherein the electrically conductive lines of the first metallization layer are oriented approximately orthogonally to the electrically conductive lines of the second metallization layer.3. The apparatus of claim 2 , wherein the one or more correlated electron switches are individually positioned at intersections of the electrically conductive lines of the first metallization layer and the electrically conductive lines of the second metallization layer.4. The apparatus of claim 3 , wherein the programmable fabric further comprises one or more access devices positioned at a respective one or more of the intersections of the electrically conductive lines of the first metallization layer and the electrically conductive lines of the second metallization layer.5. The apparatus of claim 3 , wherein the plurality of access devices comprise schottky diodes.6. The apparatus of claim 3 , further comprising a voltage and/or current source claim 3 , wherein to transition a particular correlated electron switch of the ...

ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations. 1. A method comprising:applying a first programming signal to terminals of a CES device to place the CES device in a first impedance state, the first programming signal comprising a first voltage and a first current;applying a second programming signal to terminals of the CES device to place the CES in a second impedance state, the second programming signal comprising a second voltage and a second current; andapplying a third programming signal to terminals of the CES device to place the CES device in the first impedance state, the third programming signal comprising a third voltage and a third current,wherein a polarity of the first voltage is opposite a polarity of the third voltage, and a polarity of the first current is opposite a polarity of the third current,wherein a magnitude of the first voltage is greater than a magnitude of the third voltage, or a magnitude of the first current is greater than a magnitude of the third current, or any combination thereof.2. The method of claim 1 , wherein the first impedance state comprises a conductive or low impedance state and the second impedance state comprises an insulative or low impedance state claim 1 , and wherein the first programming signal is applied in a first set operation claim 1 , the second programming signal is applied in a reset operation and the third programming signal is applied in a second set operation.3. The method of claim 2 , wherein the first set operation is characterized by a first set voltage condition and the second set operation is characterized by a second set voltage condition claim 2 , and wherein a magnitude of the first set voltage condition is greater than a magnitude of the second set voltage condition.4. The method of claim 2 , wherein the first set operation is characterized by a first set current condition and the second set operation is characterized ...

ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations. 1. A method comprising:applying a first programming signal to terminals of a correlated electron switch (CES) device to place the CES device in a first impedance state, the first programming signal comprising a first voltage and a first current;applying a second programming signal to terminals of the CES device to place the CES device in a second impedance state, the second programming signal comprising a second voltage and a second current; andapplying a third programming signal to terminals of the CES device to place the CES device in the first impedance state, the third programming signal comprising a third voltage and a third current,wherein a polarity of the first voltage is opposite a polarity of the third voltage, and a polarity of the first current is opposite a polarity of the third current,wherein a magnitude of the first voltage is greater than a magnitude of the third voltage or a magnitude of the first current is greater than a magnitude of the third current, or any combination thereof.2. The method of claim 1 , wherein the first impedance state comprises a conductive or low impedance state and the second impedance state comprises an insulative or low impedance state claim 1 , and wherein the first programming signal is applied in a first set operation claim 1 , the second programming signal is applied in a reset operation and the third programming signal is applied in a second set operation.3. The method of claim 2 , wherein the first set operation is characterized by a first set voltage condition and the second set operation is characterized by a second set voltage condition claim 2 , and wherein a magnitude of the first set voltage condition is greater than a magnitude of the second set voltage condition.4. The method of claim 2 , wherein the first set operation is characterized by a first set current condition and the ...

METHODS AND PROCESSES FOR FORMING DEVICES FROM CORRELATED ELECTRON MATERIAL (CEM)

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example. 1. A method of forming one or more correlated electron material (CEM) devices at a stage of a fabrication process , comprising:determining electrical characteristics of the one or more CEM devices to be formed at the stage of the fabrication process; and 'forming one or more CEM devices at the fabrication stage according to physical dimensional parameters or compositional parameters, or a combination thereof.', 'in response to determining the electrical characteristics, and in response to specified application performance parameters of the one or more CEM devices2. The method of claim 1 , wherein forming the one or more CEM devices occurs at a middle-of-line stage of the fabrication stage claim 1 , the one or more CEM devices to operate as an interconnect.3. The method of claim 2 , wherein forming comprises forming the one or more CEM devices to exhibit a resistance of less than 1.6 microohm-cm in a low-resistance state.4. The method of claim 3 , wherein forming comprises providing a dopant during forming of the one or more CEM devices to bring about an atomic concentration of dopant within at least a portion of the CEM of between 0.1% and 15.0%.5. The method of claim 2 , wherein the forming the one or more CEM devices comprises forming at least one CEM device to exhibit a resistance of greater than 16.0 microohm-cm in a high-resistance state.6. The method of claim 1 , wherein the forming of the one or more CEM devices comprising forming at least one CEM device to operate as a logic device at a front-end-of-line stage of ...

ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations. 15-. (canceled)6. A correlated electron switch (CES) device comprising:first and second terminals; andone or more contiguous layers of a correlated electron material (CEM) formed between the first and second terminals,wherein the one or more contiguous layers of the CEM are capable of being placed in a conductive or low impedance state responsive to a first or second write operation, or an insulative or high impedance state responsive to a third of fourth write operation, andwherein the first write operation is asymmetric with the second write operation.7. The CES device of claim 6 , and wherein:the first write operation is characterized by a first write voltage condition and a first write current condition between the first and second terminals,the second write operation is characterized by a second voltage condition and a second current condition between the first and second terminals,a polarity of the first voltage condition is opposite a polarity of the second voltage condition, anda magnitude of the first voltage condition is greater than a magnitude of the second voltage condition.8. The CES device of claim 7 , wherein a polarity of the first current condition is opposite a polarity of the second current condition claim 7 , and wherein a magnitude of the first current condition is greater than a magnitude of the second current condition.9. The CES device of claim 6 , wherein the third write operation is asymmetric with the fourth write operation.10. The CES device of claim 9 , wherein the third write operation comprises a third voltage condition and a third current condition between the first and second terminals claim 9 , and the fourth write operation comprises a fourth voltage condition and a fourth current condition between the first and second terminals claim 9 , andwherein a polarity of the third voltage condition is opposite ...

CORRELATED ELECTRON SWITCH PROGRAMMABLE FABRIC

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices. 123-. (canceled)24. A method , comprising:configuring a programmable fabric of an integrated circuit device at least in part by selectively providing a particular lower impedance path between a first particular electrically conductive line of a first metallization layer of the programmable fabric and a second particular electrically conductive line of a second metallization layer of the programmable fabric at least in part by placing two or more particular correlated electron switch devices in a particular impedance state, wherein the particular lower impedance path includes at least a third particular electrically conductive line of a third metallization layer of the programmable fabric.25. The method of claim 24 , wherein the placing the two or more particular correlated electron switch devices in the particular impedance state comprises limiting a current flow through the two or more particular correlated electron switch devices to a specified threshold current level at least in part to establish a particular threshold current density in the two or more particular correlated electron switch devices for a subsequent operation to place the two or more particular correlated electron switch devices in a second impedance state.26. The method of claim 24 , wherein the programmable fabric comprises a cross-point array claim 24 , wherein the first metallization layer includes a first plurality of electrically conductive lines oriented approximately parallel with each other claim 24 , wherein the third metallization layer includes a third plurality of electrically conductive lines oriented approximately parallel with each other claim 24 , and wherein the first plurality of electrically conductive lines are oriented approximately orthogonally to the third plurality of electrically conductive lines.27. The method of claim 26 , wherein the second metallization ...

Correlated electron switch programmable fabric

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

An integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region

Asymmetric correlated electron switch operation

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.