07-04-2009 дата публикации
Номер: US0007514111B2
Автор:
Soon Won Hong,
Gyu Nam Cho,
Yong Bum Seo,
Seung Woo Han,
Jae Hun Yu,
Hyun Tae Kim,
HONG SOON WON,
CHO GYU NAM,
SEO YONG BUM,
HAN SEUNG WOO,
YU JAE HUN,
KIM HYUN TAE
Provided are a method for preparing a granular animal feed additive and the granular animal feed additive prepared by the method. The method includes: filtering, with a membrane filter, a fermentation broth obtained from a lysine producing microorganism cultured in a lysine producing condition to obtain a lysine-containing filtrate and a microorganism-containing sludge; drying the filtrate to obtain a concentrate with a total solid content of 48 to 52 wt %; granule-drying the concentrate at a temperature of 50° C. to 60° C. to obtain granules; and coating the granules with a coating agent containing one or more selected from the group consisting of the sludge, a diluent or a free lysine as a lysine content adjustor, and a moisture prevention agent, to obtain lysine granules having the following properties:
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23-12-2014 дата публикации
Номер: US0008916213B2
Автор:
Youn Jae Lee,
Yong Bum Seo,
Seung Woo Han,
Jae Hun Yu,
Soon Won Hong,
Gyu Nam Cho,
Won Seop Choi,
LEE YOUN JAE,
SEO YONG BUM,
HAN SEUNG WOO,
YU JAE HUN,
HONG SOON WON,
CHO GYU NAM,
CHOI WON SEOP
A process for the production of animal feed additives from fermentation broth containing L-lysine is disclosed. The process does not require filtering of biomass in order to remove the biomass and produces granulated lysine of controllable lysine content with a high bulk density, low viscosity, and a low hygroscopic property which does not require the addition of an anti-absorptive substance. In this process, a lysine fermentation broth produced after slant culture, flask culture, seed process, and cultivation process is concentrated to a solid content of about 4452%. A product with low hygroscopicity, high bulk density, and the intended amount of contents is produced after being mixed with substances for controlling the amount of contents and granulated by coating the surface of the seeds. This process enables a production of animal feed additives having a lysine-HCl content of at least 65%, a water content of at most 3%, and a bulk density of 670±50 kg/m3.
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12-07-2007 дата публикации
Номер: US20070160740A1
Принадлежит:
A process for the production of animal feed additives from fermentation broth containing L-lysine is disclosed. The process does not require filtering of biomass in order to remove the biomass and produces granulated lysine of controllable lysine content with a high bulk density, low viscosity, and a low hygroscopic property which does not require the addition of an anti-absorptive substance. In this process, a lysine fermentation broth produced after slant culture, flask culture, seed process, and cultivation process is concentrated to a solid content of about 44˜52%. A product with low hygroscopicity, high bulk density, and the intended amount of contents is produced after being mixed with substances for controlling the amount of contents and granulated by coating the surface of the seeds. This process enables a production of animal feed additives having a lysine-HCl content of at least 65%, a water content of at most 3%, and a bulk density of 670±50 kg/m3.
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21-01-2021 дата публикации
Номер: US20210020500A1
A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.
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08-09-2022 дата публикации
Номер: US20220285518A1
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
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11-06-2015 дата публикации
Номер: US20150158852A1
Автор:
Cho Nam Gyu,
Chung Kun Hoe,
Hwang Ki Hwan,
Jeon Man Seok,
Kim Sung Hun,
KO Young Kwan,
KOO Dong Wan,
Koo Suk Jin,
LEE Dong Guk,
Lim Jong Su,
Ryu Jae Wook,
Woo Jae Chun
Принадлежит:
Provided is an industrial method for the preparation of [5-{(2,6-difluorobenzyloxy)methyl}-4,5-dihydro-5-methyl-3-(3-methylthiophene-2-yl)-isoxazole](common name: methiozolin) represented by Formula 1 that is a herbicidal substance in high-purity. 2. The method of claim 1 , wherein the organic solvent is selected from the group consisting of benzene claim 1 , toluene claim 1 , xylene claim 1 , chlorobenzene claim 1 , and 1 claim 1 ,2-dichloroethane.3. The method of claim 1 , wherein the alkali metal salt is selected from the group consisting of sodium hydroxide claim 1 , potassium hydroxide claim 1 , and lithium hydroxide.4. The method of claim 1 , wherein the phase transfer catalyst is selected from the group consisting of tetrabutylammoniumhydrogensulfate claim 1 , tetrabutylammoniumbromide claim 1 , and tetrabutylphosphoniumbromide.5. The method of claim 1 , wherein the mixed solvent used to purify methiozolin by crystallization of the concentrate of the isolated organic layer is a mixed solvent comprising water and a Cto Calcohol or a mixed solvent comprising a Cto Calcohol and a Cto Caliphatic hydrocarbon.6. The method of claim 5 , wherein the mixed solvent used to purify methiozolin by crystallization of the concentrate of the isolated organic layer is a mixed solvent comprising water and isopropanol or a mixed solvent comprising isopropanol and n-heptane.7. The method of claim 1 , wherein toluene is used as the organic solvent of the mixed solvent system comprising water and the organic solvent claim 1 , sodium hydroxide is used as the base claim 1 , tetrabutylphosphoniumbromide is used as the phase transfer catalyst claim 1 , a reaction temperature is in a range of 60 to 65° C. claim 1 , and the concentrate of the organic layer is crystallized in a mixed solvent comprising isopropanol and n-heptane.8. The method of claim 1 , wherein the high-purity indicates a purity of 99% or more. The present invention relates to an industrial method for the preparation of ...
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30-05-2019 дата публикации
Номер: US20190159450A1
Автор:
CHO Nam-Gyu,
CHUNG Kun-Hoe,
HWANG Ki-Hwan,
KIM Eun Ae,
Kim Sung-Hun,
KO Young Kwan,
KOO Dong Wan,
KOO Suk-Jin,
KWAK Mi-Young,
LEE Dong-Guk,
LEE Ill Young,
Lee So-Young,
LIM Hee Nam,
LIM Jong-Su,
NAM Jun-Ho,
PARK Chan Yong,
Ryu Jae Wook,
YEOM Hyun Suk,
YON Gyu Hwan
Принадлежит:
A pyridine-based compound containing an isoxazoline ring represented by Formula 1 or an agrochemically acceptable salt thereof can be used as a herbicide. A method of preparing the pyridine-based compound containing an isoxazoline ring represented by Formula 1 includes reacting a compound represented by Formula 2 with a compound represented by Formula 3. 3: The compound of claim 1 , wherein Ris H claim 1 , a methyl group claim 1 , an ethyl group claim 1 , or a benzyl group;{'sub': '2', 'Ris H or a methyl group;'}n is an integer of 0 to 1;{'sub': 3', '4', '3', '4, 'X is —NRRwherein Rand Rare each independently H, a methyl group, or a C(O)methyl group;'}Y is CH, CCl, CF, or N; andZ is H, Br, Cl, a methyl group, a tert-butyl group, or a trifluoromethyl group.4: The compound of claim 1 , wherein the compound is any one compound selected from the group consisting of:methyl 4-amino-3-chloro-6-(3-chloro-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-chloro-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(3-methyl-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-methyl-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(3-bromo-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-bromo-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(3-trifluoromethyl-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-trifluoromethyl-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(3-tert-butyl-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-tert-butyl-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(4,5-dihydroisoxazol-5-yl)picolinate;methyl 4-amino-3-chloro-6-(3-bromo-5-methyl-4,5-dihydroisoxazol-5-yl)picolinate;4-amino-3-chloro-6-(3-bromo-5-methyl-4,5-dihydroisoxazol-5-yl)picolinic acid;methyl 4-amino-3-chloro-6-(3-chloro-5-methyl-4,5-dihydroisoxazol-5-yl)picolinate;methyl 4-amino-6-((3-chloro-4,5-dihydroisoxazol-5-yl)methyl)-3-chloropicolinate;4-amino-6-((3- ...
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11-09-2014 дата публикации
Номер: US20140256553A1
Автор:
Cho Nam Gyu,
Chung Kun Hoe,
HWANG Jae Min,
Hwang Ki Hwan,
Jeon Man Seok,
Kim Sung Hun,
KO Young Kwan,
KOO Dong Wan,
Koo Suk Jin,
LEE Dong Guk,
Lim Jong Su,
Nam Jun Ho,
Pyo Sung Wan,
Ryu Jae Wook,
YON Gyu Hwan
Принадлежит:
Provided are an ortho-substituted phenylisoxazoline-based compound with 2,6-difluorobenzyloxymethyl represented by Formula 1, or a racemate or enantiomer thereof, a herbicide including the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof as an active ingredient, and a method of selectively controlling grass weed comprising treating with the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof before or after the grass weed emerges.
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08-07-2021 дата публикации
Номер: US20210210613A1
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
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13-09-2018 дата публикации
Номер: US20180261460A1
Принадлежит:
Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content. 2. The semiconductor device of claim 1 , whereinthe substrate includes a first channel, which extends in a first direction, in the first region,the substrate includes a second channel, which extends in a second direction, in the second region, anda cross-sectional area of the second channel in a direction perpendicular to the second direction is different from a cross-sectional area of the first channel in a direction perpendicular to the first direction.3. The semiconductor device of claim 2 , wherein the substrate further includes first source/drain regions claim 2 , which are disposed on both sides of the first channel in the first direction claim 2 , and second source/drain regions claim 2 , which are disposed on both sides of the second channel in the second direction claim 2 , a first gap-fill metal claim 2 , which is disposed on the first metal film claim 2 , and a second gap-fill metal claim 2 , which is disposed on the second metal film.4. The semiconductor device of claim 2 , whereinthe first and second channels are fin-shaped and protrude from the substrate to extend in the first ...
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04-01-2018 дата публикации
Номер: CA3028949A1
Автор:
Chan Yong Park,
Dong Wan Koo,
Dong-Guk LEE,
Eun Ae Kim,
Gyu Hwan Yon,
Hee Nam LIM,
Hyun Suk Yeom,
Ill Young Lee,
Jae Wook Ryu,
Jong-Su Lim,
Jun-Ho NAM,
Ki-Hwan Hwang,
Kun-Hoe Chung,
Mi-young Kwak,
Nam-Gyu CHO,
So-Young Lee,
Suk-Jin Koo,
Sung-Hun Kim,
Young Kwan Ko
The present invention relates to: any one compound selected from the group consisting of pyridine-based compounds including an isoxazoline ring represented by Formula 1 and agriculturally acceptable salts thereof; a herbicide including the compound of Formula 1, an agriculturally acceptable salt thereof, or a mixture thereof as an active component; and a method for preparing a pyridine-based compound including an isoxazoline ring represented by Formula 1 from a reaction involving compounds represented by Formula 2 and Formula 3.
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11-04-2013 дата публикации
Номер: CA2850481A1
Автор:
Dong Guk Lee,
Dong Wan Koo,
Gyu Hwan Yon,
Jae Min Hwang,
Jae Wook Ryu,
Jong Su LIM,
Jun Ho Nam,
Ki Hwan Hwang,
Kun Hoe Chung,
Man Seok Jeon,
Nam Gyu Cho,
Suk Jin Koo,
Sung Hun Kim,
Sung Wan Pyo,
Young Kwan Ko
Provided are an ortho-substituted phenylisoxazoline-based compound with 2,6-difluorobenzyloxymethyl represented by Formula 1, or a racemate or enantiomer thereof, a herbicide including the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof as an active ingredient, and a method of selectively controlling grass weed comprising treating with the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof before or after the grass weed emerges.
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11-02-2015 дата публикации
Номер: EP2835371A1
Автор:
Dong Guk Lee,
Dong Wan Koo,
Jae Chun Woo,
Jae Wook Ryu,
Jong Su LIM,
Ki Hwan Hwang,
Kun Hoe Chung,
Man Seok Jeon,
Nam Gyu Cho,
Suk Jin Koo,
Sung Hun Kim,
Young Kwan Ko
Provided is an industrial method for the preparation of [5-{(2,6-difluorobenzyloxy)methyl}-4,5-dihydro-5-methyl-3-(3-methylthiophene-2-yl)-isoxazole] (common name: methiozolin) represented by Formula 1 that is a herbicidal substance in high-purity.
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09-03-2009 дата публикации
Номер: DK1582101T3
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06-04-2016 дата публикации
Номер: EP2765129B1
Автор:
Dong Guk Lee,
Dong Wan Koo,
Gyu Hwan Yon,
Jae Min Hwang,
Jae Wook Ryu,
Jong Su LIM,
Jun Ho Nam,
Ki Hwan Hwang,
Kun Hoe Chung,
Man Seok Jeon,
Nam Gyu Cho,
Suk Jin Koo,
Sung Hun Kim,
Sung Wan Pyo,
Young Kwan Ko
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06-03-2013 дата публикации
Номер: EP2084291A4
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03-12-2013 дата публикации
Номер: BRPI0719083A2
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12-04-2016 дата публикации
Номер: CA2867936C
Автор:
Dong Guk Lee,
Dong Wan Koo,
Jae Chun Woo,
Jae Wook Ryu,
Jong Su LIM,
Ki Hwan Hwang,
Kun Hoe Chung,
Man Seok Jeon,
Nam Gyu Cho,
Suk Jin Koo,
Sung Hun Kim,
Young Kwan Ko
The present invention relates to an industrial method, according to Reaction Scheme 1, for manufacturing highly pure [5-{2,6-difluorobenzyloxy}methyl]-4,5-dihydro-5-methyl-3-(3-methylthiophene-2-yl)-isoxazole] (generic name: methiozoline), which is represented by chemical Formula 1 and is an herbicidal substance. [Reaction Scheme 1] (see formula 2) (see formula 3) (see formula 4)
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27-10-2020 дата публикации
Номер: CA3028949C
Автор:
Chan Yong Park,
Dong Wan Koo,
Dong-Guk LEE,
Eun Ae Kim,
Gyu Hwan Yon,
Hee Nam LIM,
Hyun Suk Yeom,
Ill Young Lee,
Jae Wook Ryu,
Jong-Su Lim,
Jun-Ho NAM,
Ki-Hwan Hwang,
Kun-Hoe Chung,
Mi-young Kwak,
Nam-Gyu CHO,
So-Young Lee,
Suk-Jin Koo,
Sung-Hun Kim,
Young Kwan Ko
Provided are any one compound selected from a pyridine-based compound containing an isoxazoline ring represented by Formula 1 and an agrochemically acceptable salt thereof; a herbicide including, as an active ingredient, the pyridine-based compound containing an isoxazoline ring represented by Formula l, the agrochemically acceptable salt thereof, or a combination of the pyridine-based compound containing an isoxazoline ring represented by Formula l and the agrochemically acceptable salt thereof; and a method of preparing the pyridine-based compound containing an isoxazoline ring represented by Formula 1 by reacting a compound represented by Formula 2 with a compound represented by Formula 3.
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04-12-2019 дата публикации
Номер: EP3479696A4
Автор:
Chan Yong Park,
Dong Wan Koo,
Dong-Guk LEE,
Eun Ae Kim,
Gyu Hwan Yon,
Hee Nam LIM,
Hyun Suk Yeom,
Ill Young Lee,
Jae Wook Ryu,
Jong-Su Lim,
Jun-Ho NAM,
Ki-Hwan Hwang,
Kun-Hoe Chung,
Mi-young Kwak,
Nam-Gyu CHO,
So-Young Lee,
Suk-Jin Koo,
Sung-Hun Kim,
Young Kwan Ko
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07-02-2019 дата публикации
Номер: AU2017287716A1
Автор:
Chan Yong Park,
Dong Wan Koo,
Dong-Guk LEE,
Eun Ae Kim,
Gyu Hwan Yon,
Hee Nam LIM,
Hyun Suk Yeom,
Ill Young Lee,
Jae Wook Ryu,
Jong-Su Lim,
Jun-Ho NAM,
Ki-Hwan Hwang,
Kun-Hoe Chung,
Mi-young Kwak,
Nam-Gyu CHO,
So-Young Lee,
Suk-Jin Koo,
Sung-Hun Kim,
Young Kwan Ko
The present invention relates to: any one compound selected from the group consisting of pyridine-based compounds including an isoxazoline ring represented by Formula 1 and agriculturally acceptable salts thereof; a herbicide including the compound of Formula 1, an agriculturally acceptable salt thereof, or a mixture thereof as an active component; and a method for preparing a pyridine-based compound including an isoxazoline ring represented by Formula 1 from a reaction involving compounds represented by Formula 2 and Formula 3.
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23-01-2024 дата публикации
Номер: US11881519B2
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
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31-05-2022 дата публикации
Номер: US11349007B2
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
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23-11-2023 дата публикации
Номер: US20230378263A1
A semiconductor device includes an active pattern; gate spacers on the active pattern defining a gate trench; a gate insulating layer along a sidewall and a bottom surface of the gate trench; a first conductive layer on the gate insulating layer; a second conductive layer on the first conductive layer in the gate trench; a third conductive layer on the second conductive layer in the gate trench and including a first portion between parts of the second conductive layer, and a second portion on the first portion and in contact with an upper surface of the second conductive layer; and a capping pattern on the second and third conductive layers and including a portion between the gate insulating layer and the second portion, and in contact with a sidewall of the second portion, wherein a width of the second portion is greater than a width of the first portion.
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18-04-2024 дата публикации
Номер: US20240128347A1
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
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13-09-2016 дата публикации
Номер: US09439432B2
Автор:
Dong Guk Lee,
Dong Wan Koo,
Gyu Hwan Yon,
Jae Min Hwang,
Jae Wook Ryu,
Jong Su LIM,
Jun Ho Nam,
Ki Hwan Hwang,
Kun Hoe Chung,
Man Seok Jeon,
Nam Gyu Cho,
Suk Jin Koo,
Sung Hun Kim,
Sung Wan Pyo,
Young Kwan Ko
Provided are an ortho-substituted phenylisoxazoline-based compound with 2,6-difluorobenzyloxymethyl represented by Formula 1, or a racemate or enantiomer thereof, a herbicide including the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof as an active ingredient, and a method of selectively controlling grass weed comprising treating with the ortho-substituted phenylisoxazoline-based compound, or the racemate or enantiomer thereof before or after the grass weed emerges.
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