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Применить Всего найдено 2. Отображено 2.
14-03-2013 дата публикации

RESONANT MATERIAL LAYER APPARATUS, METHOD AND APPLICATIONS

Номер: US20130062104A1
Автор: Alden Jonathan S., Barton Robert A., Craighead Harold G., Ilic Bojan R., McEuen Paul, Park Jiwoong, Parpia Jeevak M., Ruiz-Vargas Carlos S., van der Zande Arend M.
Принадлежит: Cornell University - Cornell Center for Technology Enterprise & Commercialization (CCTEC)

A resonant structure and a method for fabricating the resonant structure each include a substrate that includes at least one cavity. The resonant structure and the method for fabricating the resonant structure also include a resonant material layer located and formed over the substrate and at least in-part covering the at least one cavity. The resonant structure may comprise a graphene resonator structure. 1. A structure comprising:a substrate including at least one enclosed bottom cavity; anda plurality of resonant material layers located freely suspended over the substrate and at least in-part over the at least one enclosed bottom cavity.2. The structure of wherein the substrate comprises at least one material selected from the group consisting of conductor materials claim 1 , semiconductor materials and dielectric materials.3. The structure of wherein the cavity comprises a shape selected from the group consisting of square claim 1 , rectangle claim 1 , polygonal claim 1 , circular claim 1 , elliptical and other flowing shapes.4. The structure of wherein the plurality of resonant material layers comprise at least one resonant material selected from the group consisting of graphene claim 1 , partially hydrogenated or fluorinated graphene claim 1 , BNC claim 1 , BCN claim 1 , thin film dichalcogenides claim 1 , and BiSrCaCuO.5. The structure of wherein the plurality of resonant material layers comprises a graphene resonant material.6. A structure comprising:a substrate including at least one open bottom cavity and comprising a material selected from the group consisting of semiconductor materials and dielectric materials;at least one resonant material layer located freely suspended over the substrate and at least in-part over the at least one open bottom cavity.7. The structure of wherein the cavity comprises a shape selected from the group consisting of square claim 6 , rectangle claim 6 , polygonal claim 6 , circular claim 6 , elliptical and other flowing shapes. ...

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Номер записи: 1
02-01-2014 дата публикации

Scanned Probe Microscopy (SPM) Probe Having Angled Tip

Номер: US20140007308A1
Автор: Bryce Brian A., Ilic Bojan R., Reuter Mark C., Tiwari Sandip
Принадлежит:

A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface. 1. A probe for scanned probe microscopy , comprising:a cantilever beam extending along a generally horizontal axis, the cantilever beam having a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis; anda tip projecting outwardly from the crystal facet surface.2. The probe of claim 1 , wherein the tip is oriented generally orthogonal to the crystal facet surface.3. The probe of claim 1 , wherein the tilt angle is based on a tilt correction factor claim 1 , wherein the tilt correction factor is based on a desired angled position of the cantilever beam in a scanned probe microscopy machine.4. The probe of claim 1 , wherein the tilt angle is about 13°.5. The probe of claim 1 , wherein the crystal facet surface is selected from a group comprising: a {111} crystalline plane claim 1 , a {100} crystalline plane claim 1 , a {112} plane claim 1 , and a {110} crystalline plane.6. The probe of claim 1 , wherein the cantilever beam is constructed from is selected from the group consisting of a single-crystal silicon and a single-crystal germanium.7. The probe of claim 1 , wherein the cantilever beam includes a distal end portion claim 1 , and wherein the crystal facet surface is located at the distal end portion of the cantilever beam.8. The probe of claim 1 , further comprising a handling port claim 1 , wherein a proximate end portion of the cantilever beam is attached to the handling port.9. The probe of claim 8 , wherein handling port is constructed from a support wafer portion a buried oxide (BOX) layer and a device layer.10. The probe of claim 1 , wherein the probe is an atomic force ...

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Номер записи: 2