Phase transition memories and transistors

In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.

PERSONAL CARE COMPOSITIONS CONTAINING END-FUNCTIONALIZED IONIC SILICONE

A personal care composition contains at least one personal care component and at least one end-functionalized ionic silicone. 1. A personal care composition comprising at least one personal care component and at least one end-functionalized ionic silicone.3. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , each R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , Rand Rgroup is independently selected from methyl claim 2 , ethyl claim 2 , n-propyl claim 2 , iso-propyl claim 2 , n-butyl claim 2 , isobutyl claim 2 , tert-butyl claim 2 , n-pentyl claim 2 , iso-pentyl claim 2 , neopentyl claim 2 , tert-pentyl claim 2 , hexyl claim 2 , heptyl claim 2 , octyl claim 2 , nonyl claim 2 , decyl claim 2 , cyclopentyl claim 2 , cyclohexyl claim 2 , cycloheptyl claim 2 , methylcyclohexyl claim 2 , naphthyl; tolyl claim 2 , xylyl claim 2 , ethylphenyl and benzyl.4. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is an alkylene group CHRwherein Ris hydrogen or an Rgroup and subscript m is a positive integer ranging from 1 to 100.5. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is an arylene group selected from —(CHR)CH(CH)— —CHCH(R′)(CH)CH— or —CHCH(R)(CH)CHRwherein R′ is hydrogen or an Rgroup claim 2 , Ris hydrogen or an Rgroup claim 2 , Ris hydrogen or an Rgroup claim 2 , Ris a monovalent radical of from 1 to 20 carbon atoms and subscripts k and r are zero or positive integers subject to the limitation 0≦k+r≦100.6. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is a hydrocarbonoxy group selected from CHR)—(O—CHRCH) and —O—(CHwherein Ris hydrogen or an Rgroup claim 2 , s has a value of from 0 to 50 claim 2 , s′ has a value of from 1 to 50 and t has a value of ...

SILICONE IONOMER COMPOSITION

There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): 1. A functionalized ionic silicone having formula (I):{'br': None, 'sup': 1', '2', '3', '1', '2', '3', '1', '2', '3, 'sub': a', 'b', 'c', 'd', 'e', 'f', 'g', 'h', 'i', 'j, 'MMMDDDTTTQ\u2003\u2003(I)'} [{'sup': 1', '1', '2', '3, 'sub': '1/2', 'M=RRRSiO'}, {'sup': 2', '4', '5', '6, 'sub': '1/2', 'M=RRRSiO'}, {'sup': 3', '7', '8', '9, 'sub': '1/2', 'M=RRRSiO'}, {'sup': 1', '10', '11, 'sub': '2/2', 'D=RRSiO'}, {'sup': 2', '12', '13, 'sub': '2/2', 'D=RRSiO'}, {'sup': 3', '14', '15, 'sub': '2/2', 'D=RRSiO'}, {'sup': 1', '16, 'sub': '3/2', 'T=RSiO'}, {'sup': 2', '17, 'sub': '3/2', 'T=RSiO'}, {'sup': 3', '18, 'sub': '3/2', 'T=RSiO'}, {'sub': '4/2', 'Q=SiO'}], 'wherein{'sup': 1', '2', '3', '5', '6', '8', '9', '10', '11', '13', '15', '16, 'where R, R, R, R, R, R, R, R, R, R, R, Rare aliphatic, aromatic or fluoro containing monovalent hydrocarbon radicals containing from 1 to about 60 carbon atoms;'}{'sup': 4', '12', '17, 'claim-text': {'br': None, 'sup': x-', 'y+, 'sub': 'n', '-A-IM;\u2003\u2003(II)'}, 'where R, R, Rare monovalent radical bearing ion-pairs and have the formula (II)'}where A is a spacing group having at leas one spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group,{'sub': 3', '3', '3', '3, 'sup': −', '2−', '−', '2−', '2−, 'where I is an ionic group such as sulfonate —SO, sulfate —OSO, carboxylate —COO, phosphonate —PO and phosphate —OPO group,'}where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, metal complexes, quaternary ammonium and phosphonium groups, organic cations, alkyl cations, cationic hydrocarbons and cationic biopolymers; or, {'br': None, 'sub': '2', 'sup': '+', '—R′−NR″—R′″-I\u2003\u2003(III)'}, 'zwitterions having the formula (III)where R′ is a divalent hydrocarbon radical containing from 1 to about 20 carbon atoms, where R″ is monovalent ...

Scanned Probe Microscopy (SPM) Probe Having Angled Tip

A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface. 1. A probe for scanned probe microscopy , comprising:a cantilever beam extending along a generally horizontal axis, the cantilever beam having a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis; anda tip projecting outwardly from the crystal facet surface.2. The probe of claim 1 , wherein the tip is oriented generally orthogonal to the crystal facet surface.3. The probe of claim 1 , wherein the tilt angle is based on a tilt correction factor claim 1 , wherein the tilt correction factor is based on a desired angled position of the cantilever beam in a scanned probe microscopy machine.4. The probe of claim 1 , wherein the tilt angle is about 13°.5. The probe of claim 1 , wherein the crystal facet surface is selected from a group comprising: a {111} crystalline plane claim 1 , a {100} crystalline plane claim 1 , a {112} plane claim 1 , and a {110} crystalline plane.6. The probe of claim 1 , wherein the cantilever beam is constructed from is selected from the group consisting of a single-crystal silicon and a single-crystal germanium.7. The probe of claim 1 , wherein the cantilever beam includes a distal end portion claim 1 , and wherein the crystal facet surface is located at the distal end portion of the cantilever beam.8. The probe of claim 1 , further comprising a handling port claim 1 , wherein a proximate end portion of the cantilever beam is attached to the handling port.9. The probe of claim 8 , wherein handling port is constructed from a support wafer portion a buried oxide (BOX) layer and a device layer.10. The probe of claim 1 , wherein the probe is an atomic force ...

PERSONAL CARE COMPOSITIONS CONTAINING IONIC SILICONE AND FILM-FORMING AGENT

A personal care composition includes at least one end-functionalized ionic silicone and at least one film-forming agent. 1. A personal care composition comprising at least one end-functionalized ionic silicone and at least one film-forming agent.3. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , each R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , R claim 2 , Rand Rgroup is independently selected from methyl claim 2 , ethyl claim 2 , n-propyl claim 2 , iso-propyl claim 2 , n-butyl claim 2 , isobutyl claim 2 , tert-butyl claim 2 , n-pentyl claim 2 , iso-pentyl claim 2 , neopentyl claim 2 , tert-pentyl claim 2 , hexyl claim 2 , heptyl claim 2 , octyl claim 2 , nonyl claim 2 , decyl claim 2 , cyclopentyl claim 2 , cyclohexyl claim 2 , cycloheptyl claim 2 , methylcyclohexyl claim 2 , naphthyl; tolyl claim 2 , xylyl claim 2 , ethylphenyl and benzyl.4. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is an alkylene group CHRwherein Ris hydrogen or an Rgroup and subscript m is a positive integer ranging from 1 to 100.5. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is an arylene group selected from —(CHR)CH(CH)— —CHCH(R′)(CH)CHor —CHCH(R)(CH)CHRwherein R′ is hydrogen or an Rgroup claim 2 , Ris hydrogen or an Rgroup claim 2 , Ris hydrogen or an Rgroup claim 2 , Ris a monovalent radical of from 1 to 20 carbon atoms and subscripts k and r are zero or positive integers subject to the limitation 0≦k+r≦100.6. The personal care composition of wherein in end-functionalized ionic silicone (I) claim 2 , divalent spacing group A is a hydrocarbonoxy group selected from CHR)—(O—CHRCH) and —O—(CHwherein Ris hydrogen or an Rgroup claim 2 , s has a value of from 0 to 50 claim 2 , s′ has a value of from 1 to 50 and t has a value of from 0 to 50 ...

Methods of making patterned structures of materials, patterned structures of materials, and methods of using same

A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Patterned SOI regions on semiconductor chips

A method and structure for forming patterned SOI regions and bulk regions is described wherein a silicon containing layer over an insulator may have a plurality of selected thickness' and wherein bulk regions may be suitable to form DRAM's and SOI regions may be suitable to form merged logic such as CMOS. Ion implantation of oxygen is used to formed patterned buried oxide layers at selected depths and mask edges may be shaped to form stepped oxide regions from one depth to another. Trenches may be formed through buried oxide end regions to remove high concentrations of dislocations in single crystal silicon containing substrates. The invention overcomes the problem of forming DRAM with a storage capacitor formed with a deep, trench in bulk Si while forming merged logic regions on SOI.

Fast disintegrating oral dosage forms

The present invention relates to the method of preparation of fast disintegrating oral dosage forms, such as tablets, which disintegrates rapidly in the mouth within 15 seconds without the need of water. The method of this invention is particularly suitable for the actives with low bulk density, poorly compressible and moisture sensitive actives.

Molecular memory & logic

The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

Phase transition memories and transistors

In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.

Method of producing a gallium arsenide field effect transistor device

Construction for strengthening carrier mobility in semiconductor on insulator

(57)【要約】 【課題】 本発明は、絶縁基板を含む半導体層のキャリ アの正孔と電子の移動度を高める構造を有する半導体構 造を提供する。 【解決手段】 半導体層は絶縁層の上に位置し、半導体 層の第１領域は第２領域をほぼ取り囲む。第１領域は、 合金化、酸化、沈殿、粒子サイズの形成または変更及び 反応で構成されるグループから選択されたプロセスによ り形成される。これにより合金、酸化物、沈殿物、また は化合物が、単独で、または半導体層の物質と組み合わ せられて形成される。第１領域は物質の初期容積より大 きく、これにより第２領域は圧縮応力を受け、結果的に 価電子帯の縮退がとれ、正孔等のキャリアのバンド・エ ッジ質量が減少し、正孔と電子の両方の輸送が改良され る。本発明は、この構造により、キャリア移動度が低い ｎチャネル及びｐチャネルのトランジスタと、キャリア 移動度が低いｐチャネル・トランジスタを持つＣＭＯＳ ロジックの問題を克服する。

Ionic silicones and compositions containing the same

Controlled release paroxetine-containing tablets based on a core and a coating

The invention provides a controlled release tablet comprising of: (i) a core consisting of paroxetine or its pharmaceutically acceptable salt, at least one rate controlling hydrophilic polymer, a diluent, a binder and a lubricant; and (ii) a coating consisting of an enteric polymer and a plasticizer.

Nano-structure memory device

A memory device and memory incorporating a plurality of the memory devices is described wherein each memory device has spaced apart source and drain regions, a channel, a barrier insulating layer, a nanocrystal or a plurality of nanocrystals, a control barrier layer, and a gate electrode. The nanocrystal which may be a quantum dot, stores one electron or hole or a discrete number of electrons or holes at room temperature to provide threshold voltage shifts in excess of the thermal voltage for each change in an electron or a hole stored. The invention utilizes Coulomb blockade in electrostatically coupling one or more stored electrons or holes to a channel while avoiding in-path Coulomb-blockade controlled conduction for sensing the stored charge.

Heterojunction transistors

Molecular memory & logic

The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

Unpinned oxide-compound semiconductor structures and method of forming same

UNPINNED OXIDE-COMPOUND SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME ABSTRACT OF THE DISCLOSURE Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO2. A metal gate is deposited on the SiO2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO2 directly overlying the GaAs layer.

Compounds, a process for their preparation and their use as dyes and pigments

Compounds of formula (1) wherein R1 is hydrogen, hydroxy, halogen, nitro, cyano, amino, carboxy, carboxylic ester, sulfo, sulfonic ester, carboxylic amide, sulfonic amide, alkoxy, aryloxy, alkylthio or arylthio, X is -0-, -S-, -NH- or -N(alkyl)-, Y is hydrogen or carboxylic ester, Z is =C- or =N-, T is =C- or =N-, R2 is hydrogen, alkyl or CN, n is 0 or 1, when Z is =N- then n is 0, m is 0 or 1, when T is =N- then m is 0, A is a heterocyclic or linear or polycondensed aromatic group which is unsubstituted or substituted by hydroxy alkyl, halogen, nitro, cyano, amino, acylarnino, carboxylic ester, sulfonic ester, carboxylic amide, sulfonic amide, alkoxy, aryloxy, alkylthio, arylthio or phenyl, or A together with T and R2 can form an allycyclic or heterocyclic ring, their preparation and their use in the production of coloured plastics or polymeric colour particles.

Methods of making patterned structures of materials, patterned structures of materials, and methods of using same

A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Silicone ionomer composition

There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M 1 a M 2 b M 3 c D 1 d D 2 e D 3 f T 1 g T 2 h T 3 i Q j (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-l x- "M n y+ ; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate -S0 3 - , carboxylate -COO - , phosphonate -PO 3 2- group and phosphate - OPO 3 2- , where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): -R'-NR" 2 + -R"'-I (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≤ a+b+c+d+e+f+g+h+i+j ≤ 6000, b+e+h >0 and c+f+i >0.

Electronic gain cell based charge sensor

A gated metal oxide semiconductor field effect transistor (MOSFET) gain cell is formed with a flow channel for molecule flow. The flow channel is formed under the gate, and between a source and drain of the transistor. The molecule flow modulates a gain of the transistor. Current flowing between the source and drain is representative of charges on the molecules flowing through the flow channel. A plurality of individually addressable gain cells are coupled between chambers containing samples to measure charges on molecules in the samples passing through the gain cells.

Three-dimensional circuit integration

Personal care compositions containing ionic silicone and film-forming agent

A personal care composition includes at least one end-fimctionalized silicone and at least one film-forming agent.

Personal care compositions containing end-functionalized ionic silicone

A personal care composition contains at least one personal care component and at least one end-functionalized ionic silicone.

Personal care compositions containing ionic silicone and film-forming agent

Composições para cuidado pessoal contendo silicone iônico e agente formador de filme

resumo “composições para cuidados pessoais contendo silicone iônico e agente formador de filme” uma composição para o cuidado pessoal inclui pelo menos um silicone com extremidade funcionalizada e pelo menos um agente formador de filme.

Personal care compositions containing ionic silicone and film-forming agent

A personal care composition includes at least one end-fimctionalized silicone and at least one film-forming agent.

Verfahren zur herstellung eines kontaktes zwischen einem metall und einem verbindungshalbleiter mit hoeherem bandabstand und kontakt erhaeltlich durch dieses verfahren.

Back-plane for semiconductor device

A back-plane for a semiconductor device, includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.

Verfahren zur herstellung eines kontaktes zwischen einem metall und einem verbindungshalbleiter mit hoeherem bandabstand und kontakt erhaeltlich durch dieses verfahren.

Light emitting device

Light emitting structures in back-end of line silicon technology

Personal care compositions containing ionic silicone and film-forming agent

A personal care composition includes at least one end-functionalized ionic silicone and at least one film-forming agent.

Personal care compositions containing end-functionalized ionic silicone

A personal care composition contains at least one personal care component and at least one end-functionalized ionic silicone.