15-09-2022 дата публикации
Номер: US20220293421A1
Принадлежит:
Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns. 1a. A method of fabricating semiconductor device , the method comprising:{'i': a', 'a, 'stacking lower mask layer on an entire surface of substrate;'}{'i': a', 'a', 'a', 'a, 'forming on the lower mask layer plurality of first upper mask patterns and plurality of sacrificial spacers that cover sidewalls of the first upper mask patterns, wherein the first upper mask patterns and the sacrificial spacers have line shape that extends in first direction;'}{'i': a', 'a', 'a', 'a, 'forming plurality of first holes that expose top surface of an etching target layer by removing portion of the first upper mask patterns and portion of the lower mask layer below the first upper mask patterns;'}{'i': a', 'a, 'forming plurality of second holes that expose the top surface of the etching target layer by removing portion of the lower mask layer that is not covered by the first upper mask patterns and the sacrificial spacers;'}{'i': a', 'a', 'a, 'forming plurality of second upper mask patterns and plurality of sacrificial patterns, the second upper mask patterns filling space between the sacrificial spacers on the lower mask layer, and the sacrificial patterns filling the first holes and the second holes;'}{'i ...
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