METHOD AND DEVICE FOR APPROXIMATING TISSUE

A wound closure assembly and method for its use. The wound closure assembly includes a curved inserter having a distal end and a proximal end, a filamentary element extending between a proximal end and a distal end, wherein the proximal end is coupled to the proximal end of the curved inserter, a first anchor coupled to the filamentary element between its first and second ends, and a second anchor positioned at the distal end of the filamentary element. The filamentary element is configured to form a slip knot between the first and second anchors so as to enable the distance between the first and second anchors to be decreased by pulling on the proximal end of the filamentary element. The distal end of the curved inserter is received within a channel in the first anchor that extends along its longitudinal length. 1. A wound closure assembly comprising:a curved inserter having a distal end and a proximal end;a filamentary element extending between a proximal end and a distal end, wherein the proximal end is coupled to the proximal end of the curved inserter;a first anchor coupled to the filamentary element between its first and second ends; anda second anchor positioned at the distal end of the filamentary element;wherein the filamentary element is configured to form a slip knot between the first and second anchors so as to enable the distance between the first and second anchors to be decreased by pulling on the proximal end of the filamentary element, andwherein the distal end of the curved inserter is received within a channel in said first anchor, said channel extending along a longitudinal length of said first anchor.2. The wound closure assembly according to claim 1 , wherein the first anchor is slidably coupled to the filamentary element.3. The wound closure assembly according to claim 1 , wherein the first anchor includes a tissue penetrating first end.4. The wound closure assembly according to claim 3 , wherein first and second ends of the first anchor are ...

Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential. 118.-. (canceled)19. A method of reducing plasma arcing within a semiconductor processing chamber which employs an electrostatic chuck , a liner or an internal component having a surface which is in contact with a plasma , said surface comprising a ceramic material , said method comprising:{'sup': '3+', 'a) selecting oxides to comprise said ceramic material from yttrium oxide and at least one other oxide, where a positive ions of said other oxide has a significantly different valance from a Y ion, to form a Y vacancy, leading to a decrease of electronic resistivity of said ceramic material;'}b) sintering said oxides to form at least one crystalline solid solution; andc) exposing said ceramic material to a plasma.20. A method in accordance with claim 19 , wherein said oxide having said different valance from said Y ion is selected from the group consisting of CeO claim 19 , TiO claim 19 , ZrO claim 19 , HfO claim 19 , NbO claim 19 , and combinations thereof21. A method of reducing plasma arcing within a semiconductor processing chamber which employs an electrostatic chuck claim 19 , a liner or an internal component having a surface contacting a plasma claim 19 , said surface comprising a ceramic material claim 19 , said method comprising:{'sup': 3+', '3+, 'a) selecting oxides to comprise said ceramic material from yttrium oxide and at least one other oxide, where a positive ion of said other oxide shows the same valence as the Y ion, but possess a significantly different ion radius than the Yion, leading to a decrease of electronic resistivity of said ceramic material;'}b) sintering said oxides in a reductive atmosphere; andc) ...

Motor with Axial Air Gap

The invention discloses a motor with axial air gap including a base, a rotor and a coil unit. The base has a shaft-coupling portion. The rotor has a body coupled with a permanent magnet and a shaft. The permanent magnet has inner and outer circumferential faces, wherein the inner and outer circumferential faces are respectively projected onto the base as inner and outer circles. The shaft is coupled with the shaft-coupling portion. The coil unit is mounted on the base and has one or more coils. The permanent magnet and the coil unit face each other. At least one coil has a periphery intersecting with the inner and outer circles. The permanent magnet has a first radial length between the inner and outer circumferential faces. At least one coil has a second radial length. The first radial length is 10% to 90% of the second radial length. 1. A motor with axial air gap , comprising:a base having a shaft-coupling portion;a rotor having a body coupled with a permanent magnet and a shaft, wherein the permanent magnet has inner and outer circumferential faces, the inner circumferential face of the permanent magnet is projected onto the base as an inner circle, the outer circumferential face of the permanent magnet is projected onto the base as an outer circle, and the shaft is rotatably coupled with the shaft-coupling portion of the base; anda coil unit mounted on the base and having one or more coils;wherein the permanent magnet and the coil unit face each other in an axial direction of the motor, at least one of the one or more coils has a periphery intersecting with the inner and outer circles of the projection of the permanent magnet, the permanent magnet has a first radial length between the inner circumferential face and the outer circumferential face thereof, at least one of the one or more coils has a second radial length, and the first radial length of the permanent magnet is 10% to 90% of the second radial length of the at least one of the one or more coils.2. The ...

MANUFACTURE OF HIGH-PERFORMANCE NEODYMIUM IRON BORON PERMANENT MAGNET MATERIAL

The invention relates to a method of manufacturing high-performance neodymium iron boron permanent magnet material, which improves the coercive force of a magnet by replacing Dy with heavy rare earth element Tb, and simultaneously reduces the production cost by replacing Nd with a small amount of Pr. The neodymium iron boron permanent magnet material containing Pr and Tb comprises (Nd,Pr), Fe, B, Dy, Tb, Co, and Al; the atomic percents of the elements are respectively 7≦x≦15, 5.5≦y≦8, 0.05≦z≦6, 0≦u≦2, 0≦v≦3, 0≦w≦1.5 and Fe and inducted impurity from raw material for the residual. The compounding, smelting, dusting, moulding and sintering processes are performed according to the atomic percents. The added Tb improves the anisotropy field of the molecule of the magnet, therefore, the coercive force of the magnet is obviously improved. Simultaneously, as the anisotropy field of the magnetocrystalline of PrFeB is slightly higher than that of NdFeB, and the small amount of added Pr also slightly improves the coercive force of the magnet. 1. A method of manufacturing high-performance neodymium iron boron permanent magnet material , the method comprising the steps of:(a) firstly, the materials with the atomic percents as follows: 7.0 to 15.0 percent of Nd or Pr—Nd alloy, 5.5 to 8.0 percent of B, 0.05 to 6.0 percent of Dy, 0 to 2.0 percent of Tb, 0.1 to 0.3 percent of Co, 0.1 to 1.5 percent of Al, and Fe and other inducted impurity from raw material for the residual are mixed for compounding;{'sup': '−1', '(b) secondly, the compounded materials are put into an intermediate frequency induction vacuum rapid hardening furnace, the furnace is vacuumized until the pressure is less than 1.0×10Pa, then Ar gas is charged into the furnace for protecting, then heating and melting are performed, after refining operation, molten steel is poured to a rotating cooling copper roller, then alloy cast strips with the thickness being about 0.25-0.35 mm are prepared, the temperature of the ...

Motor Stator

A motor stator comprising a plurality of wiring layers and at least one electrical connection module is disclosed. Each wiring layer has an insulating base and at least one winding module formed on the insulating base. Each electrical connection module has a thorough conductor and at least one local conductor, with the thorough conductor penetrating the plurality of wiring layers and electrically connecting with at least one of the at least one winding module of at least one of the plural wiring layers, with the at least one local conductor penetrating at least one of the plural wiring layers, and with each local conductor electrically connecting the winding modules of at least two of the plural wiring layers. 1. A motor stator , comprising:a plurality of wiring layers, with each wiring layer having an insulating base and at least one winding module formed on the insulating base; andat least one electrical connection module, with each electrical connection module having a thorough conductor and at least one local conductor, with the thorough conductor penetrating the plurality of wiring layers and electrically connecting with at least one of the at least one winding module of at least one of the plural wiring layers, with the at least one local conductor penetrating at least one of the plural wiring layers, and with each local conductor electrically connecting the winding modules of at least two of the plural wiring layers.2. The motor stator as claimed in claim 1 , wherein each winding module has a coil claim 1 , the thorough conductor is on one of an inside and an outside of the coil while the at least one local conductor is on the other one of the inside and outside of the coil.3. The motor stator as claimed in claim 1 , wherein each winding module has a coil claim 1 , and the thorough conductor and the at least one local conductor are arranged outside the coil.4. The motor stator as claimed in claim 1 , wherein each winding module has a coil claim 1 , and the ...

COMPONENT AND MANUFACRING PROCESS OF RARE EARTH PERMANENT MAGNET MATERIAL

The invention relates to a component of rare earth permanent magnet material, and the atomic percents of the material are Re(x)Fe(100x-z-a-b-c)B(z)Nb(a)Al(b)M(c), wherein x=12-16, z=5.5-6.5, a=0.05-1, b=0-0.8, and c=0-3. Re stands for rare earth elements, which comprises one or more of Nd, Pr, Gd, Ho, Dy and Tb. By adding Nb, Hcj can be improved, the rectangle degree of J-H demagnetization curve can be improved, and the temperature stability of the product can also be improved; and by adding Nb, the amount of Dy and Tb in heavy rare earth can be reduced, and the cost of the material can also be reduced. 1. A component of rare earth permanent magnet material being characterized having atomic percents of the material are as follows:Re(x)Fe(100-x-z-a-b-c)B(z)Nb(a)Al(b)M(c), wherein x has a range between 12 and 16, z has a range between 5.5 and 6.5, a has a range between 0.05 and 1, b has a range between 00 and 0.8 and c has a range between 0 and 3; andwherein Re comprises at least one or more of Nd, Pr, Gd, Ho, Dy and Tb.2. A manufacturing process of rare earth permanent magnet material , comprising the steps of:compounding materials from the following: Re(x)Fe(100-x-z-a-b-c)B(z)Nb(a)Al(b)M(c), wherein x has a range between 12 and 16, z has a range between 5.5 and 6.5, a has a range between 0.05 and 1, b has a range between 0 and 0.8 and c has a range between 0 and 3; and wherein Re comprises at least one or more of Nd, Pr, Gd, Ho, Dy and Tb;strip casting the compounded materials in a intermediate frequency induction vacuum rapid hardening furnace, said strip casting process comprises the steps of: turning on a heating power source for heating within 1 Pa vacuum degree, charging about 0.05 MPa argon gas into the furnace for refining before the materials are molten, and pouring molten steel when the temperature of the molten steel is about 1400 DEG C., to ensure that the molten steel flows to a rotating copper roller with cooling water along a diversion trench, to form ...

Miniature Motor and Cooling Fan Having the Same

A miniature motor includes a base having a coupling portion. An engaging portion is provided on a periphery of the base surrounding the coupling portion to form a concave surface therebetween. A stator coil unit includes a substrate mounted on the concave surface. A rotating member is rotatably coupled with the coupling portion and includes a permanent magnet. The base includes a thermoplastic section having a reduced opening. The reduced opening is formed by heating and deforming the thermoplastic section after the stator coil unit is mounted on the concave surface, and the molten and deformed thermoplastic section takes shape to form the reduced opening after cooling. The base can be connected to a frame having an air inlet and an air outlet to form a fan housing, and the rotating member includes blades to form an impeller, providing a cooling fan including the miniature motor. 1. A miniature motor comprising:a base including a coupling portion, with an engaging portion provided on a periphery of the base surrounding the coupling portion, with a concave surface formed between the coupling portion and the engaging portion, with the engaging portion including an end having a thermoplastic section;a stator coil unit including a substrate mounted on the concave surface of the base, with the substrate including at least one coil; anda rotating member rotatably coupled with the coupling portion of the base, with the rotating member including a permanent magnet, with an air gap formed between the permanent magnet and the stator coil unit,with the thermoplastic section of the base including a reduced opening, with the reduced opening formed by heating and deforming the thermoplastic section after the stator coil unit is mounted on the concave surface, with the heated and deformed thermoplastic section taking shape to form the reduced opening after cooling.2. The miniature motor as claimed in claim 1 , with the engaging portion being an annular wall surrounding the ...

ELECTRICITY TRANSMISSION COOLING SYSTEM

A cooling system includes a first section of high temperature superconducting (HTS) cable configured to receive a first flow of coolant and to permit the first flow of coolant to flow therethrough. The system may further include a second section of high temperature superconducting (HTS) cable configured to receive a second flow of coolant and to permit the second flow of coolant to flow therethrough. The system may further include a cable joint configured to couple the first section of HTS cable and the second section of HTS cable. The cable joint may be in fluid communication with at least one refrigeration module and may include at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable. 1. A cooling system comprising:a first section of high temperature superconducting (HTS) cable configured to receive a flow of coolant flowing at a first rate and to permit said flow of coolant to flow therethrough, said flow of coolant undergoing a temperature increase as it passes through said HTS cable;a first refrigeration module configured to receive said flow of coolant from said first section of HTS cable and to lower the temperature of said flow of coolant, said first refrigeration module configured to divide said flow of coolant into a plurality of coolant streams, each coolant stream flowing at approximately a second rate;a second section of HTS cable configured to receive at least one of said plurality of coolant streams, said second section of HTS cable configured to permit said at least one of said plurality of coolant streams to flow therethrough; anda third section of HTS cable configured to receive said at least one of said plurality of coolant streams, said third section of HTS cable configured to permit said at least one of said plurality of coolant streams to flow therethrough;wherein said plurality of ...

Advection-type Fan And An Impeller Thereof

An impeller of an advection-type fan includes a metal base plate, a shaft and a plurality of plastic blades. The metal base plate includes a shaft-coupling portion and a peripheral portion, with a first plane facing in a first direction and a second plane facing in a second direction opposite to the first direction arranged between the shaft-coupling portion and the peripheral portion. The metal base plate is in a plane form between the shaft-coupling portion and the peripheral portion. The shaft has a fixing end and a free end. The fixing end is coupled with the shaft-coupling portion and the free end extends in the first direction. Each plastic blade has a coupling portion and an air-driving portion. The coupling portion is coupled with the peripheral portion and the air-driving portion extends in the second direction. 1. An impeller of an advection-type fan comprising:a metal base plate comprising a shaft-coupling portion and a peripheral portion distant from the shaft-coupling portion, wherein a first plane facing in a first direction and a second plane facing in a second direction opposite to the first direction are arranged between the shaft-coupling portion and the peripheral portion, the metal base plate is in a plane form between the shaft-coupling portion and the peripheral portion, and the first plane is provided with a permanent magnet;a shaft having a fixing end and a free end distant from the fixing end, wherein the fixing end is coupled with the shaft-coupling portion of the metal base plate, and the free end extends axially in the first direction; anda plurality of plastic blades, each having a coupling portion and an air-driving portion, wherein the coupling portion is coupled with the peripheral portion of the metal base plate, and the air-driving portion axially extends in the second direction.2. The impeller of an advection-type fan as claimed in claim 1 , wherein each plastic blade has a top edge facing in the second direction and spaced from ...

Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide

A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating. 126.-. (canceled)27. A solid sintered body ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing , said article comprising: a solid solution which comprises a combination of yttrium oxide , zirconium oxide , and at least one yttrium aluminum oxide compound , wherein said article is formed from yttrium oxide at a concentration ranging from about 71.5% by weight to about 77% by weight , a concentration of zirconium oxide ranging from about 14.3% by weight to about 15.4% by weight , and a concentration of aluminum oxide ranging from about 7.7% by weight to about 14.3% by weight.28. A solid sintered body ceramic article in accordance with claim 27 , wherein a fracture toughness of said article ranges from about 1.6 Mpa·mto about 1.7 Mpa·m.29. A solid sintered body ceramic article in accordance with claim 27 , wherein a mean grain size of said sintered ceramic ranges from about 3 μm to about 6 μm.30. A solid sintered body ceramic article in accordance with claim 27 , wherein a plasma erosion rate with respect to a plasma comprising CFand CHFranges from about 0.1 μm/hr to about 0.2 μm/hr.31. A solid sintered body ceramic article in accordance with claim 27 , wherein said article is selected from the group consisting of a lid claim 27 , a lid liner claim 27 , a chamber liner claim 27 , a nozzle claim 27 , a gas distribution plate claim 27 , a shower head claim 27 , an electrostatic chuck ...

Advection Fan and An Impeller Thereof

An impeller includes a metal base plate, a shaft and a plurality of plastic blades. The metal base plate includes a shaft-coupling portion, a peripheral portion, and first and second surfaces. The first surface faces away from the second surface in a first direction, the second surface faces away from the first surface in a second direction. The metal base plate is flat between the shaft-coupling portion and the peripheral portion. The first surface has a permanent magnet. The shaft has a fixing end coupled with the shaft-coupling portion, as well as a free end extending axially in the first direction. Each plastic blade has a coupling portion coupled with the peripheral portion, as well as an air-driving portion axially extending in the second direction. The impeller may be rotatably coupled with a driving module. The driving module is installed in a fan frame to form an advection fan. 1. An impeller of an advection fan , comprising:a metal base plate comprising a shaft-coupling portion and a peripheral portion distant from the shaft-coupling portion, wherein the metal base plate comprises a first surface and a second surface between the shaft-coupling portion and the peripheral portion, wherein a direction the first surface faces away from the second surface is defined as a first direction, wherein another direction the second surface faces away from the first surface is defined as a second direction opposite to the first direction, wherein the metal base plate is flat between the shaft-coupling portion and the peripheral portion, and wherein the first surface is provided with a permanent magnet;a shaft having a fixing end and a free end distant from the fixing end, wherein the fixing end is coupled with the shaft-coupling portion of the metal base plate, and wherein the free end extends axially in the first direction; anda plurality of plastic blades, wherein each plastic blade has a coupling portion and an air-driving portion, wherein the coupling portion is ...

PHOTOACOUSTIC IMAGE RECONSTRUCTION METHOD FOR SUPPRESSING ARTIFACTS

The present disclosure provides a photoacoustic image reconstruction method for suppressing artifacts, including: acquiring relevant parameters of the system; selecting a suitable pixel size and dividing the imaging area into multiple pixels; traversing each pixel, calculating multiple delay and summations according to the time sequence, and restoring the signal waveform; calculating the signal envelope of the signal recovered from each pixel, performing signal suppression, suppressing artifacts in the signal, and retaining real signal; the real signal value in the suppressed signal is taken as the gray value of the pixel in the image, and is saved in the picture to complete the reconstruction of the image. 1. A method for suppressing artifacts in a photoacoustic image , comprising:{'sub': 'n', 'sup': 'tr', 'providing physical properties of a photoacoustic sensor and collecting photoacoustic signals s(t), n=1, 2, 3, . . . , N from an imaging target area using the photoacoustic sensor;'}selecting a pixel size for the imaging target area and dividing the imaging target area into multiple pixels;calculating multiple delays and summations for each of said multiple pixels according to a time sequence, restoring a waveform of the multiple pixels, and calculating a signal envelope of the multiple pixels;performing signal suppression on the signal envelope recovered from each of said multiple pixels to suppress artifact signals, thereby recovering a real signal value for each of said multiple pixels; andusing the real signal value as a grayscale value for each of the multiple pixels in the photoacoustic image, thereby reconstructing the photoacoustic image.2. The method according to claim 1 , wherein physical properties of the photoacoustic sensor include a sampling frequency (f) of the photoacoustic sensor claim 1 , a quantity (N) of sensor units of the photoacoustic sensor claim 1 , and physical locations of the sensor units (r claim 1 , n=1 claim 1 , 2 claim 1 , 3 claim ...

WIRELESS COMMUNICATION DEVICE

A wireless communication device includes a wireless transceiver, an analog-to-digital converter (ADC), and a processor. The ADC is configured to read a sensing value to generate a piece of sensing data. The processor is electrically connected to the wireless transceiver and the ADC. When an interrupt request is detected, the processor sends the piece of sensing data via the wireless transceiver. 1. A wireless communication device , comprising:an analog-to-digital converter, configured to read a sensing value to generate a sensing data;a processor electrically connected to the analog-to-digital converter; anda wireless transceiver electrically connected to the processor, the processor sending the sensing data via the wireless transceiver when detecting an interrupt request.2. The wireless communication device as claimed in claim 1 , wherein the processor reads a predetermined value when activated claim 1 , and the processor waits for the interrupt request sent from an electronic device when the predetermined value is at a first status and the processor periodically generates the interrupt request when the predetermined value is a second status.3. The wireless communication device as claimed in claim 2 , wherein the wireless communication device further comprises a storage medium electrically connected to the processor and configured to store the predetermined value.4. The wireless communication device as claimed in claim 3 , wherein the wireless communication device further comprises a communication port electrically connected to the processor and configured to modify via the processor the predetermined value stored in the storage medium.5. The wireless communication device as claimed in claim 3 , wherein the wireless communication device further comprises a switch electrically connected to the storage medium claim 3 , and the predetermined value is reset to the first status when the switch is activated.6. The wireless communication device as claimed in claim 2 , ...

Application of BAZ2B Gene as Target in Slowing Aging

Provided is an application of a BAZ2B gene as a target in slowing aging. It is disclosed that the BAZ2B gene plays an important regulatory role in occurrence and development of normal aging and age-related diseases, and the down-regulation thereof can significantly slow aging and alleviate memory decay, capacity degradation and the like in the aging process. The BAZ2B can be used as the research target of aging and age-related diseases for developing drugs of inhibiting or delaying aging, and used as a diagnostic and prognostic marker of aging and age-related diseases. 1. A method for alleviating aging , or preventing or treating an aging-related disease , comprising administrating a down-regulator of BAZ2B protein or encoding gene thereof to subjects in need thereof.2. The method according to claim 1 , wherein claim 1 , the down-regulator is selected from the group consisting of:a gene editing reagent that specifically knocks out the encoding gene of BAZ2B;an interfering molecule that specifically interferes with the expression of the encoding gene of BAZ2B;a small-molecule compound that specifically inhibits BAZ2B protein or encoding gene thereof; andan antibody or ligand that specifically binds to BAZ2B protein.3. The method according to claim 2 , wherein claim 2 , the down-regulator is a gene editing reagent that specifically knocks out the encoding gene of BAZ2B claim 2 , said gene editing reagent recognizes the encoding gene of BAZ2B and knocks out the gene; or is a construct capable of expressing or forming said gene editing reagent.4. The method according to claim 2 , wherein claim 2 , the interfering molecule is a small interfering RNA claim 2 , antisense nucleic acid claim 2 , microRNA claim 2 , dsRNA claim 2 , which inhibits or silences the encoding gene of BAZ2B or transcript thereof claim 2 , or a construct capable of expressing or forming the small interfering RNA claim 2 , antisense nucleic acid claim 2 , microRNA claim 2 , dsRNA.5. The method ...

Modular valve system

A modular valve system includes a modular valve body having an inlet, an outlet, a through-hole, and a fluid flow path between the inlet and the outlet. The modular valve body is used to assemble any one of a pressure regulating valve, a slam-shut valve, or a flow control valve, and the through-hole is configured to receive a component of any one of the pressure regulating valve, the slam-shut valve, and the flow control valve.

DEEPWATER JACKET DESIGN METHOD

A new jacket design method is disclosed, especially for deepwater water heavy jacket applications. The method utilizes a special type of air bags, called Ship Launching Air Bags (SLAB), to provide low cost temporary buoyancy used for jacket installation purpose only. A designer only needs to satisfy the jacket stiffness for the resistance of environmental and gravity loads without the consideration of jacket reserve buoyancy. The required jacket reserve buoyancy could be increased with the utilization of temporally attached SLABs during the jacket installation. 1. A method for designing a jacket of an offshore fixed platform , the jacket having a plurality of jacket members including main leg members , diagonal members and horizontal members , the method comprising:preparing a plurality of non-steel buoyancy tank groups, wherein each buoyancy tank group comprises a plurality of air bags; andinstalling the prepared plurality of non-steel buoyancy tank groups on the jacket;wherein more than 80 percent of jacket members between water surface and 40 meters (about 130 ft) below water surface are slender members with D (member diameter)/t (member wall thickness) less than or equal to 30.2. The method according to claim 1 , wherein each of the air bag is made of nature rubber and multiple layers of polyester nets bonded together through a vulcanized process.3. The method according to claim 1 , wherein each of the air bag comprises a middle tubular section and two cone sections at each end.4. The method according to claim 3 , wherein each of the air bag comprises a plurality of rows of side ring pairs longitudinally attached to the sides of the air bag middle section.5. The method according to claim 4 , wherein the act of preparing a plurality of non-steel buoyancy tank groups comprises:dividing a plurality of air bags into a plurality of groups, each group comprising two or more air bags; andforming a sheet of air bags for each group by connecting adjacent air bags within ...

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. 113.-. (canceled)14. A semiconductor processing apparatus , said apparatus having at least one surface exposed to a halogen-comprising plasma during a process , wherein said apparatus comprises a bulk , sintered solid solution ceramic which is resistant to erosion by halogen-containing plasmas , wherein said ceramic is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole % , and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.15. (canceled)16. (canceled)17. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is selected from the group consisting of a lid claim 14 , a lid liner claim 14 , a nozzle claim 14 , a gas distribution plate claim 14 , a shower head claim 14 , an electrostatic chuck component claim 14 , a shadow frame claim 14 , a substrate holding frame claim 14 , a processing kit claim 14 , and a chamber liner.18. A semiconductor processing apparatus in accordance with claim 14 , wherein a mean grain size of said ceramic ranges from about 0.5 μm to about 1.0 μm.19. A semiconductor processing apparatus in accordance with claim 14 , wherein a flexural strength of said ceramic ranges from about 1100 MPa to about 1300 MPa.20. A semiconductor processing apparatus in accordance with claim 14 , wherein a fracture toughness of said ceramic ranges from about 10 MPa·mto about 12 MPa·m.21. A ...

INTERFACE-CONTROLLED IN-SITU SYNTHESIS OF NANOSTRUCTURES IN MOLTEN METALS FOR MASS MANUFACTURING

Provided herein are manufacturing methods of a metal matrix nanocomposite, comprising: providing a molten metal including a first reactant; providing a molten salt, including a second set of reactants and a diluting salt, over a surface of the molten metal; and maintaining the molten salt and the molten metal at a temperature sufficient to react the first reactant and the second set of reactants, such that nanostructures with controlled small sizes are formed adjacent to an interface between the molten salt and the molten metal, and are incorporated into the molten metal for mass manufacturing of metal matrix nanocomposite. 1. A manufacturing method of a metal matrix nanocomposite , comprising:providing a molten metal including a first reactant;providing a molten salt, including a second set of reactants and a diluting salt, over a surface of the molten metal; andmaintaining the molten salt and the molten metal at a temperature sufficient to react the first reactant and the second set of reactants, such that nanostructures are formed adjacent to an interface between the molten salt and the molten metal, and are incorporated into the molten metal.2. The manufacturing method of claim 1 , wherein one or more of a concentration of the first reactant claim 1 , a concentration of the second set of reactants claim 1 , the temperature claim 1 , and a time of reaction is set or adjusted according to a target size of the nanostructures.3. The manufacturing method of claim 1 , wherein the manufacturing method provides for mass production.4. The manufacturing method of claim 1 , wherein providing the molten metal includes heating one or more metals to form the molten metal.5. The manufacturing method of claim 1 , wherein the first reactant is a metal or an alloying element.6. The manufacturing method of claim 1 , wherein providing the molten metal includes heating the first reactant to form the molten metal.7. The manufacturing method of claim 1 , wherein the second set of ...

INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, PROGRAM, SUBSTRATE PROCESSING APPARATUS, CRITERION DATA DETERMINATION APPARATUS, AND CRITERION DATA DETERMINATION METHOD

An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including: 1. An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump , comprising:a determination unit configured to determine a normal variation range or a normal time variation behavior of a target state quantity which is a state quantity varying depending on a load of gas flowing into the vacuum pump, based on at least one of past target state quantities of the target vacuum pump or another vacuum pump; anda comparison unit configured to compare a current target state quantity of the target vacuum pump with the normal variation range or the normal time variation behavior and output the comparison result.2. The information processing apparatus according to claim 1 ,wherein the determination unit corrects the past target state quantity based on a pressure in the target vacuum pump or a pressure in the other vacuum pump, and determines the normal variation range or the normal time variation behavior using the corrected past target state quantity, andthe comparison unit corrects the current target state quantity of the target vacuum pump based on the pressure in the target vacuum pump or the pressure in the other vacuum pump, and compares the corrected target state quantity with the normal variation range or the normal time variation behavior.3. The information processing apparatus according to claim 1 , wherein the determination unit determines the normal variation range or the normal time variation behavior of the target state quantity for each process based on the target information amount for each process corresponding to a predetermined number of times after the target vacuum pump is operated claim 1 , andthe comparison unit compares the current target state quantity of the target vacuum pump with the ...

SEMICONDUCTOR PROCESSING APPARATUS WITH A CERAMIC-COMPRISING SURFACE WHICH EXHIBITS FRACTURE TOUGHNESS AND HALOGEN PLASMA RESISTANCE

A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %. 113.-. (canceled)14. A semiconductor processing apparatus , said apparatus having at least one surface exposed to a halogen-comprising plasma during a process , wherein said surface is a ceramic which is resistant to erosion by halogen-containing plasmas , wherein said ceramic is formed from zirconium oxide at a molar concentration ranging from about 91 mole % to about 94 mole % , and yttrium oxide at a molar concentration ranging from about 9 mole % to about 6 mole %.15. A semiconductor processing apparatus in accordance with claim 14 , wherein underlying said ceramic is a high purity aluminum alloy.16. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is a solid body claim 14 , bulk ceramic apparatus.17. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is selected from the group consisting of a lid claim 14 , a lid liner claim 14 , a nozzle claim 14 , a gas distribution plate claim 14 , a shower head claim 14 , an electrostatic chuck component claim 14 , a shadow frame claim 14 , a substrate holding frame claim 14 , a processing kit claim 14 , and a chamber liner.18. A semiconductor processing apparatus in accordance with claim ...

Replica Cascode Bias Voltage-Controlled Oscillators

Embodiments relate to a voltage oscillator (VCO) that uses a replica bias circuit to generate a cascode bias voltage. The VCO generate an output periodic signal having a frequency and phase that is less or not susceptible to voltage swings by using a bias voltage generated in a replica bias circuit that replicates a voltage-to-current converter in the VOC. The bias voltage is generated and regulated according to a power supply voltage that supplies power to the VCO to account for voltage variations in the power supply voltage. 1. A voltage oscillator comprising:a voltage-to-current converter configured to generate a control current responsive to receiving a control voltage, the voltage-to-current converter comprising a first transistor and a second transistor, a drain of the first transistor coupled to a source of the second transistor and a gate of the second transistor biased by a bias voltage;a current controlled oscillator coupled to the voltage-to-current converter to receive the control current and to generate a periodic output signal having a frequency corresponding to the control current; anda bias voltage generation circuit coupled to the voltage-to-current converter, the bias voltage generation circuit comprising a replica bias circuit configured to generate a replica voltage corresponding to a voltage at the source of the second transistor.2. The voltage oscillator of claim 1 , wherein the bias voltage generation circuit further comprises an amplifier coupled to replica bias circuit to receive the output voltage and a reference voltage claim 1 , the amplifier configured to generate the bias voltage representing an amplified difference between the replica voltage and the reference voltage.3. The voltage oscillator of claim 2 , wherein the reference voltage equals to the replica voltage.4. The voltage oscillator of claim 1 , wherein the replica bias circuit comprises a third transistor and a fourth transistor coupled to the third transistor claim 1 , a gate ...

THREE-DIMENSIONAL MEMORY DEVICE ERASE OPERATION

Implementations of the present disclosure provide 3D memory devices and methods for operating the 3D memory devices. In an example, a 3D memory device includes a plurality of memory layers and a dummy memory layer between the plurality of memory layers and a NAND memory string extending through the memory layers and the dummy memory layer. The NAND memory string includes a source, a drain, and a plurality of memory cells at intersections with the plurality of memory layers and between the source and the drain. The 3D memory device also includes a peripheral circuit configured to erase the plurality of memory cells. To erase the plurality of memory cells, the peripheral circuit includes a word line driving circuit configured to apply a positive bias voltage on the dummy memory layer. 1. A three-dimensional (3D) memory device , comprising:a plurality of memory layers and a dummy memory layer between the plurality of memory layers;a NAND memory string extending through the memory layers and the dummy memory layer, the NAND memory string comprising a source, a drain, and a plurality of memory cells at intersections with the plurality of memory layers and between the source and the drain; anda peripheral circuit configured to erase the plurality of memory cells, wherein, to erase the plurality of memory cells, the peripheral circuit comprises a word line driving circuit configured to:apply a positive bias voltage on the dummy memory layer.2. The 3D memory device of claim 1 , wherein the word line driving circuit is further configured to apply a ground voltage on the plurality of memory layers.3. The 3D memory device of claim 1 , wherein the plurality of memory layers are divided into a first memory deck and a second memory deck above the first memory deck claim 1 , and wherein the dummy memory layer is between the first memory deck and the second memory deck.4. The 3D memory device of claim 1 , whereinthe dummy memory layer comprises a plurality of dummy memory layers ...

MULTI-SPIRAL OPTICAL DEVICE

The present invention provides a multi-spiral optical device, which comprises a base and a plurality of spiral channels. The plurality of spiral channels are formed on the base and include a first port and a second port, respectively. The plurality of first ports are located at the center of the base; the plurality of second ports are located at the periphery of the base. Thereby, the multi-spiral optical device can form a light concentrating device. In addition, a fluid can be filled to or drawn from one or more of the plurality of spiral channels for switching the optical state of the multi-spiral optical device. By filling or drawing the fluid to or from the plurality of spiral channels selectively, they can be switched to a light-pervious, a sheltering, or a light-concentrating state according to users' requirements. 1. A multi-spiral optical device , comprising:a base; anda plurality of spiral channels, formed on a surface of said base, each said spiral channel having a first port and a second port, said plurality of first port located at the center of said base, and said plurality of second ports located at the periphery of said base.2. The multi-spiral optical device of claim 1 , wherein said plurality of spiral channels includes a plurality of spiral sidewalls forming said plurality of spiral channels.3. The multi-spiral optical device of claim 1 , wherein the material of said base is acrylic or glass.4. The multi-spiral optical device of claim 2 , wherein the cross-section of said plurality of spiral sidewalls is fan-shaped claim 2 , triangular claim 2 , or trapezoidal and the cross-section of each said spiral channel is trapezoidal claim 2 , triangular claim 2 , or fan-shaped.5. The multi-spiral optical device of claim 1 , wherein said plurality of spiral channels are disposed at equal intervals.6. A multi-spiral optical device claim 1 , comprising:a base; anda plurality of spiral channels, formed on a surface of said base, each said spiral channel having ...

COATED ARTICLE AND SEMICONDUCTOR CHAMBER APPARATUS FORMED FROM YTTRIUM OXIDE AND ZIRCONIUM OXIDE

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide. 120-. (canceled)21. A coated article that is resistant to erosion by halogen-containing plasmas , the coated article comprising an article and a ceramic coating formed on the article , wherein the ceramic coating comprises:yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andzirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.22. The coated article of claim 21 , wherein the ceramic coating consists essentially of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.23. The coated article of claim 21 , wherein the ceramic coating consists of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.24. The coated article of claim 21 , wherein the ceramic coating comprises a solid solution of the yttrium oxide and the zirconium oxide.25. The coated article of claim 21 , wherein the article is a semiconductor processing chamber component selected from a group consisting of a lid claim 21 , a lid liner claim 21 , a nozzle claim 21 , a gas distribution plate claim 21 , a shower head claim 21 , an electrostatic chuck component claim 21 , a shadow frame claim 21 , a substrate holding frame claim 21 , a processing kit claim 21 , and a chamber liner.26. The coated article of claim 21 , wherein the ceramic coating is formed on the article using a technique selected from a group consisting of thermal spraying claim 21 , plasma spraying claim 21 , sputtering claim 21 , and chemical vapor deposition.27. A semiconductor processing apparatus adapted to have at least one surface ...

METHOD OF FORMING A BULK ARTICLE AND SEMICONDUCTOR CHAMBER APPARATUS FROM YTTRIUM OXIDE AND ZIRCONIUM OXIDE

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide. 120-. (canceled)21. A method of forming a bulk ceramic article that is resistant to erosion by halogen-containing plasmas , the method comprising:sintering a green body formed from a first granular powder comprising yttrium oxide and a second granular powder comprising zirconium oxide to form the bulk ceramic article, wherein the bulk ceramic article comprises the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole % and the zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.22. The method of claim 21 , wherein the bulk ceramic article consists essentially of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.23. The method of claim 21 , wherein the bulk ceramic article consists of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.24. The method of claim 21 , wherein the bulk ceramic article comprises a solid solution of the yttrium oxide and the zirconium oxide.25. The method of claim 21 , wherein the bulk ceramic article is a semiconductor processing chamber component selected from a group consisting of a lid claim 21 , a lid liner claim 21 , a nozzle claim 21 , a gas distribution plate claim 21 , a shower head claim 21 , an electrostatic chuck component claim 21 , a shadow frame claim 21 , a substrate holding frame claim 21 , a processing kit claim 21 , and a chamber liner.26. A method of forming a semiconductor processing apparatus adapted to have at least one surface exposed to a halogen-comprising plasma during a process performed in a semiconductor ...

Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

SEMICONDUCTOR PROCESSING APPARATUS WITH A CERAMIC-COMPRISING SURFACE WHICH EXHIBITS FRACTURE TOUGHNESS AND HALOGEN PLASMA RESISTANCE

A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %. 113.-. (canceled)14. A semiconductor processing apparatus , said apparatus having at least one surface exposed to a halogen-comprising plasma during a process , wherein said surface is a ceramic which is resistant to erosion by halogen-containing plasmas , wherein said ceramic is formed from zirconium oxide at a molar concentration ranging from about 91 mole % to about 94 mole % , and yttrium oxide at a molar concentration ranging from about 9 mole % to about 6 mole %.15. A semiconductor processing apparatus in accordance with claim 14 , wherein underlying said ceramic is a high purity aluminum alloy.16. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is a solid body claim 14 , bulk ceramic apparatus.17. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is selected from the group consisting of a lid claim 14 , a lid liner claim 14 , a nozzle claim 14 , a gas distribution plate claim 14 , a shower head claim 14 , an electrostatic chuck component claim 14 , a shadow frame claim 14 , a substrate holding frame claim 14 , a processing kit claim 14 , and a chamber liner.18. A semiconductor processing apparatus in accordance with claim ...

VALVE SEAT ASSEMBLY

A flow control device includes a valve body defining an inlet, an outlet, and a flow path. A valve seat assembly includes a fitting coupled to the valve body, a seat ring coupled to the fitting and defining a valve seat. The seat ring includes an inner groove formed on an interior surface of the seat ring. A control element is movable relative to the valve body between a closed position, in which the control element engages the valve seat, and an open position, in which the control element is spaced away from the valve seat. The seat ring is coupled to the fitting by snap-fit connection such that a portion of the fitting is disposed in the inner groove of the seat ring. 1. A flow control device comprising:a valve body defining an inlet, an outlet, and a flow path connecting the inlet and the outlet; a fitting that is configured to be coupled to the valve body; and', 'a seat ring that is configured to be carried by the fitting, wherein an interior surface of the seat ring includes a first portion that defines an inner groove and a second portion that defines a valve seat; and, 'a valve seat assembly including'}a control element movable relative to the valve body between a closed position, in which the control element engages the valve seat, and an open position, in which the control element is spaced away from the valve seat;wherein when the seat ring is carried by the fitting, a portion of the fitting is disposed in the inner groove of the seat ring.2. The flow control device of claim 1 , wherein the seat ring includes an exterior surface and a U-shaped outer groove formed on the exterior surface of the seat ring.3. The flow control device of claim 2 , wherein the U-shaped outer groove of the seat ring is configured to receive an O-ring.4. The flow control device of claim 1 , wherein the fitting includes an outer surface defining a ridge that is disposed in the inner groove of the seat ring.5. The flow control device of claim 1 , further comprising a cage disposed ...

METHOD AND APPARATUS FOR SENDING TARGET DATA TO AND ACQUIRING TARGET DATA FROM NETWORK

Disclosed are a method and apparatus for acquiring target data from and sending target data to a network. An NDN network and a TCP/IP network are simultaneously contained as a network layer protocol, and the NDN network is used to perform interaction of control information and searching of target data, while the TCP/IP network is used to perform specific transmission of the target data. Not only are intelligent and efficient content distribution advantages of the NDN network made use of, but also, by means of the efficient transmission capability of the TCP/IP network in an existing network device and communication environment, the content distribution capability in a hybrid network simultaneously having the TCP/IP network and the NDN network is improved. 1. A method of acquiring target data from a network , comprising:sending an NDN request packet to an NDN network, wherein the NDN request packet comprises identification information of the target data and a first work mode ID, wherein the first work mode ID is configured to indicate that the NDN request packet will return the target data directly as an NDN packet or the NDN request packet will return an IP address of a terminal comprising the target data as the NDN packet;receiving an NDN packet returned from the NDN network, wherein the NDN packet comprises an IP address of a terminal comprising the target data and a second work mode ID, wherein the second work mode ID indicates the NDN packet is an NDN packet comprising the target data or the IP address of the terminal comprising the target data;identifying the second work mode ID and performing the following steps when the second work mode ID indicates that the NDN packet comprises the IP address of a terminal comprising the target data:extracting the IP address from the NDN packet;establishing a TCP/IP communication connection with the terminal through the TCP/IP network according to the IP address; andacquiring the target data from the terminal via the TCP/IP ...

NATURAL CONVECTION COOLING FOR POWER ELECTRONICS SYSTEMS HAVING DISCRETE POWER DISSIPATION COMPONENTS

A power electronics based system using natural, convection cooling, includes an enclosure housing a plurality of discrete components distributed in a vertical direction from a bottom portion to a top portion of the enclosure and having a heat density weighted average center at a first height along the vertical direction. There is a heat exchanger adjacent to the enclosure, including an inlet port and an outlet port in fluid communication with the enclosure. The heat exchanger has a vertical cooling average center at a second height. There is a cooling fluid disposed in the enclosure and in the heat exchanger to cool the discrete components. The discrete components are positioned in the vertical direction in the enclosure such that the first height of the heat density weighted average center along the vertical direction is below the second height of the vertical cooling average center of the heat exchanger. 1. A power electronics based system using natural , convection cooling , comprising:an enclosure housing a plurality of discrete electrical components being distributed in a vertical direction from a bottom portion to a top portion of the enclosure and having a heat density weighted average center at a first height along the vertical direction;a heat exchanger adjacent to and external of the enclosure, the heat exchanger including an inlet port in fluid communication with the enclosure and an outlet port in fluid communication with the enclosure, the heat exchanger having a vertical cooling average center at a second height along the vertical direction; anda cooling fluid disposed in the enclosure and in the heat exchanger to cool the discrete electrical components;wherein the discrete electrical components are positioned in the vertical direction in the enclosure such that the first height of the heat density weighted average center along the vertical direction is below the second height of the vertical cooling average center of the heat exchanger in order to ...

Semiconductor device and fabrication method thereof

A semiconductor device and fabrication method thereof are provided. The method includes forming at least one dummy gate structure and sidewall spacers of the dummy gate structure in a first dielectric layer, together on a substrate, and removing the dummy gate structure, thereby forming a first opening between the sidewall spacers. The method further includes forming a gate structure in the first opening and having a top surface levelled the first dielectric layer, removing a portion of the sidewall spacers and a portion of the gate structure, respectively, to form a second opening in the first dielectric layer, on remaining sidewall spacers, and on remaining gate structure, and forming a capping layer to fill the second opening and to have a top surface levelled with the first dielectric layer.

Electricity transmission cooling system

A cooling system includes a first section of high temperature superconducting (HTS) cable configured to receive a first flow of coolant and to permit the first flow of coolant to flow therethrough. The system may further include a second section of high temperature superconducting (HTS) cable configured to receive a second flow of coolant and to permit the second flow of coolant to flow therethrough. The system may further include a cable joint configured to couple the first section of HTS cable and the second section of HTS cable. The cable joint may be in fluid communication with at least one refrigeration module and may include at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable. Other embodiments and implementations are also within the scope of the present disclosure.

Method and apparatus for forwarding an interest packet based on a probability tree in an information network

A method and device for forwarding an interest packet based on a probability tree in an information network. By introducing a probability tree, the process of forwarding an interest packet is finally changed into a selection process: starting from a root node of the probability tree, selecting child nodes of a current node according to the probability of each child node of the current node, and stopping selecting until the selected child node is a leaf node. Moreover, the introduced probability tree provides a good carrier for machine learning. By considering the selection process as an optimization problem, the selection process can be converged to be approximate to an optimal state using online machine learning, and moreover, the probability of each node in the probability tree can be adjusted according to changes in network conditions, so that the forwarding method and device have strong adaptability to the network changes, thereby improving self-adaptability. Compared with the existing interest packet forwarding solution, the present invention improves the forwarding efficiency, increases throughput, and achieves load balance.

ANOMALOUS PIXEL DETECTION

A video noise analyzer for detecting residual point noise in a video generates a list of candidate defective pixels by joining results of a temporal invariance detector and a spatial outlier detector. A data store is structured to contain data describing the candidate defective pixels and/or the blocks from which the pixels were selected. In other embodiments, a video noise analyzer includes a first salient analyzer structured to compare pixels within a block to a mean value of other pixels within the same block, a first threshold processor to generate a first pixel candidate list including pixels that differ significantly from their neighboring pixels, a second salient analyzer structured to generate a difference value between a subject pixel, its neighboring pixels, and neighbors of the neighboring pixels, and an identifier to label as a candidate dead pixel those pixels having a frequency occurrence of visual saliency greater than a predefined frequency threshold. 1. A video noise analyzer for detecting residual point noise in a video , comprising:an input for receiving a video to be analyzed;a temporal invariance detector structured to perform a differencing function between pixels of a same block of two adjacent frames and to generate a first pixel candidate list including pixels that have a relatively low rate of change between frames;a spatial outlier detector structured to generate a second pixel candidate list including pixels that have a relatively high level of intensity deviation from adjacent pixels;a combiner to combine the first pixel candidate list and the second pixel candidate list to generate a candidate noise pixel list; anda data store structured to contain data describing one or more pixels on the candidate noise pixel list or the blocks from which the pixels on the candidate noise pixel list were selected.2. The video noise analyzer for detecting residual point noise in a video according to claim 1 , in which the temporal invariance detector ...

Video generating method and apparatus of video generating system

The present invention belongs to the technical field of video recording and provides a video generating method and apparatus of a video generating system, the video generating system comprises a system target orientating camera, a target tracking camera and a panorama camera, the method comprises: when it is judged that a target object included in the image collected by the target tracking camera is a person, and the person lies within a scope of a lens of the target tracking camera, switching the target tracking camera such that it serves as a video generating source and generating a video according to images collected by the target tracking camera; when it is judged that the target object included in an image collected by the target tracking camera is a person, and the person lies out of the scope of the lens of the target tracking camera, or it is judged that the target object included in an image collected by the target tracking camera is not a person, switching the panorama camera such that it serves as the video generating source and generating a video according to the images collected by the panorama camera. Automatic control for switching among different cameras to collect images and generate videos is achieved, so that accurate tracking for any target object and accurate switching among different cameras can be done, and automatic switching among different cameras during a video generating process is realized; in this way, there is no need to perform operation and manual intervention after installation and debugging are accomplished.

ELECTRICITY TRANSMISSION COOLING SYSTEM

A method for cooling high temperature superconducting (HTS) cable comprising receiving a first flow of coolant at a first section of HTS cable and permitting the first flow of coolant to flow therethrough. The method also includes receiving a second flow of coolant at a second section of HTS cable and permitting the second flow of coolant to flow therethrough. The first section of HTS cable and said second section of HTS cable are coupled via a cable joint, the cable joint electrically connecting the first and second sections of HTS cable. The cable joint is in fluid communication with at least one refrigeration module. The cable joint includes at least one conduit configured to permit a third flow of coolant between the cable joint and the at least one refrigeration module through a coolant line separate from the first and second sections of HTS cable. 115-. (canceled)16. A method for cooling high temperature superconducting (HTS) cable comprising:receiving a first flow of coolant at a first section of HTS cable and permitting said first flow of coolant to flow therethrough;receiving a second flow of coolant at a second section of HTS cable and permitting said second flow of coolant to flow therethrough;and coupling said first section of HTS cable and said second section of HTS cable via a cable joint, said cable joint electrically connecting said first and second sections of HTS cable, said cable joint being in fluid communication with at least one refrigeration module, said cable joint including at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable.17. The method of wherein electrically connecting includes electrically connecting a portion of HTS wire associated with said first section of HTS cable with a portion of HTS wire associated with said second section of HTS cable via said cable joint.18. The ...

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. 113.-. (canceled)14. A semiconductor processing apparatus , said apparatus having at least one surface exposed to a halogen-comprising plasma during a process , wherein said apparatus comprises a bulk , sintered solid solution ceramic which is resistant to erosion by halogen-containing plasmas , wherein said ceramic is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole % , and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.15. (canceled)16. (canceled)17. A semiconductor processing apparatus in accordance with claim 14 , wherein said apparatus is selected from the group consisting of a lid claim 14 , a lid liner claim 14 , a nozzle claim 14 , a gas distribution plate claim 14 , a shower head claim 14 , an electrostatic chuck component claim 14 , a shadow frame claim 14 , a substrate holding frame claim 14 , a processing kit claim 14 , and a chamber liner.18. A semiconductor processing apparatus in accordance with claim 14 , wherein a mean grain size of said ceramic ranges from about 0.5 μm to about 1.0 μm.19. A semiconductor processing apparatus in accordance with claim 14 , wherein a flexural strength of said ceramic ranges from about 1100 MPa to about 1300 MPa.20. A semiconductor processing apparatus in accordance with claim 14 , wherein a fracture toughness of said ceramic ranges from about 10 MPa·mto about 12 MPa·m.21. A ...

MULTIPURPOSE BRACKET

There is provided a multipurpose bracket including a horizontal portion, a right vertical portion, and a left vertical portion. The horizontal portion has a hook on a front surface of the horizontal portion, and a downward protrusion at a lower edge of the horizontal portion. The right vertical portion is connected at a right end of the horizontal portion, and has a right-upper protrusion and a right-lower protrusion. The left vertical portion is connected at a left end of the horizontal portion, and has a left-upper protrusion and a left-lower protrusion. 1. A multipurpose bracket , comprising:a horizontal portion having a hook on a front surface of the horizontal portion, and a downward protrusion at a lower edge of the horizontal portion;a right vertical portion connected at a right end of the horizontal portion, and having a right-upper protrusion and a right-lower protrusion; anda left vertical portion connected at a left end of the horizontal portion, and having a left-upper protrusion and a left-lower protrusion.2. The multipurpose bracket of claim 1 , further comprising an insert connected at an upper edge of the horizontal portion.3. The multipurpose bracket of claim 2 , wherein the insert is bended toward a back surface of the horizontal portion.4. The multipurpose bracket of claim 2 , wherein the horizontal portion claim 2 , the right vertical portion claim 2 , the left vertical portion claim 2 , and the insert are formed integrally.5. The multipurpose bracket of claim 1 , wherein the horizontal portion has a symmetric shape claim 1 , and the right vertical portion is symmetric to the left vertical portion.6. The multipurpose bracket of claim 1 , further comprising:an upper opening defined by the lower edge of the horizontal portion, the right-upper protrusion of the right vertical portion, and the left-upper protrusion of the left vertical portion; anda lower opening defined by the right-upper protrusion and right-lower protrusion of the right vertical ...

COATED ARTICLE AND SEMICONDUCTOR CHAMBER APPARATUS FORMED FROM YTTRIUM OXIDE AND ZIRCONIUM OXIDE

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide. 120-. (canceled)21. A coated article that is resistant to erosion by halogen-containing plasmas , the coated article comprising an article and a ceramic coating formed on the article , wherein the ceramic coating comprises:yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andzirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.22. The coated article of claim 21 , wherein the ceramic coating consists essentially of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.23. The coated article of claim 21 , wherein the ceramic coating consists of:the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole %; andthe zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.24. The coated article of claim 21 , wherein the ceramic coating comprises a solid solution of the yttrium oxide and the zirconium oxide.25. The coated article of claim 21 , wherein the article is a semiconductor processing chamber component selected from a group consisting of a lid claim 21 , a lid liner claim 21 , a nozzle claim 21 , a gas distribution plate claim 21 , a shower head claim 21 , an electrostatic chuck component claim 21 , a shadow frame claim 21 , a substrate holding frame claim 21 , a processing kit claim 21 , and a chamber liner.26. The coated article of claim 21 , wherein the ceramic coating is formed on the article using a technique selected from a group consisting of thermal spraying claim 21 , plasma spraying claim 21 , sputtering claim 21 , and chemical vapor deposition.27. A semiconductor processing apparatus adapted to have at least one surface ...

ACTUATOR ASSEMBLY FOR A FLUID CONTROL DEVICE

A fluid control device comprising including a body having an inlet, an outlet, and a fluid flow path between the inlet and the outlet, a seat, and a control element that is coupled to a stem. The control element and the stem are movable relative to a longitudinal axis and biased toward a closed position, in which the control element engages the seat. An actuator assembly is operatively coupled to the stem and includes a planetary gear transmission mechanism configured to receive a first rotational velocity and to deliver a second rotational velocity different than the first rotational velocity. A shaft has a first end coupled to the transmission mechanism and a second end coupled to valve stem. The second rotational velocity is transmitted to the valve stem to move the control element between the closed position and an open position. 1. A manual actuation assembly for a fluid control device , comprising:a coupling that is configured to receive a shaft of the fluid control device;a rotatable input device; anda transmission section that is configured to operably couple the rotatable input device and the coupling such that rotation of the rotatable input device causes rotation of the shaft, wherein the transmission section comprises:a sun gear that is configured to rotate in conjunction with rotation of the rotatable input device; anda plurality of satellite gears that are each configured to revolve around the sun gear, wherein the coupling is operably coupled to the plurality of satellite gears.2. The manual actuation assembly of claim 1 , wherein the transmission section further comprises a planet carrier that is coupled to each of the plurality of satellite gears.3. The manual actuation assembly of claim 2 , wherein the planet carrier is coupled to the coupling.4. The manual actuation assembly of claim 1 , wherein the coupling comprises a cavity that is configured to receive the shaft.5. The manual actuation assembly of claim 4 , further comprising a biasing member ...

Method of etching carbon-containing silicon oxide films

We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon-containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. When the method of the invention is used, a higher carbon content in the carbon-containing silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon-containing silicon oxide film is plasma etched using a plasma generated from a source gas comprising NH 3 and C x F y . It is necessary to achieve the proper balance between the relative amounts of NH 3 and C x F y in the plasma source gas in order to provide a balance between etch by-product polymer deposition and removal on various surfaces of the substrate being etched. The NH 3 gas functions to “clean up” deposited polymer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon:nitrogen in the plasma source gas typically ranges from about 0.3:1 to about 3:1. We have found that C 2 F 6 and C 4 F 8 provide excellent etch rates during etching of carbon-containing silicon oxide films.

CURRENT SIGNAL SEGMENTATION ALGORITHM

A current signal segmentation algorithm is provided. The segmentation algorithm divides a current signal waveform into mutually different segments according to a physical feature thereof, extracts shape distribution, statistical and harmonic features of the segments, and calculates a similarity between a segment pair. The segmentation algorithm includes the following steps: segmenting a current signal to separate a standby current and an overshoot current, only leaving a working current; extracting a shape distribution feature of a working current segment; extracting a statistical feature of the working current segment; extracting a harmonic feature of the working current segment; calculating a similarity between a segment pair; and deriving a maximum clique set in a similarity graph through a maximum clique search algorithm as a class from automatic segmentation. The algorithm can quickly and accurately classify current signals generated by different electrical appliances in different working states so as to facilitate subsequent processing. 1. A current signal segmentation algorithm , wherein accurately depicting current signals of different electrical appliances in different states by extracting distinguishing features of the current signals comprises the following steps:1) segmenting a current signal to separate a standby current and an overshoot current, only leaving a working current;2) extracting a shape distribution feature of a working current segment;3) extracting a statistical feature of the working current segment;4) extracting a harmonic feature of the working current segment;5) calculating a similarity between a segment pair; and6) deriving a maximum clique set in a similarity graph through a maximum clique search algorithm as a class from an automatic segmentation.2. The current signal segmentation algorithm according to claim 1 , wherein step 1) comprises:step 1: sampling all vertices:{'sub': S', 'v', 'k, 'wherein, an original signal is denoted as S, ...

Replica cascode bias voltage-controlled oscillators

Embodiments relate to a voltage oscillator (VCO) (100) that uses a replica bias circuit (103) to generate a cascode bias voltage. The VCO (100) generates an output periodic signal having a frequency and phase that is less or not susceptible to voltage swings by using a bias voltage generated in a replica bias circuit (103) that replicates a voltage-to-current converter (101) in the VCO (100). The bias voltage is generated and regulated according to a power supply voltage that supplies power to the VCO (100) to account for voltage variations in the power supply voltage.

Fault current limiting hts cable and method of configuring same

A cryogenically-cooled HTS cable is configured to be included within a utility power grid having a maximum fault current that would occur in the absence of the cryogenically- cooled HTS cable. The cryogenically-cooled HTS cable includes a continuous liquid cryogen coolant path for circulating a liquid cryogen. A continuously flexible arrangement of HTS wires has an impedance characteristic that attenuates the maximum fault current by at least 10%. The continuously flexible arrangement of HTS wires is configured to allow the cryogenically-cooled HTS cable to operate, during the occurrence of a maximum fault condition, with a maximum temperature rise within the HTS wires that is low enough to prevent the formation of gas bubbles within the liquid cryogen.

Parallel HTS Transformer Device

A superconducting transformer system is configured to be included within a utility power grid having a known fault current level. The superconducting transformer system includes a non-superconducting transformer interconnected between a first node and a second node of the utility power grid. A superconducting transformer is interconnected between the first node and the second node of the utility power grid. The superconducting transformer and the non-superconducting transformer are electrically connected in parallel. The superconducting transformer has a lower series impedance than the non-superconducting transformer when the superconducting transformer is operated below a critical current level and a critical temperature. The superconducting transformer is configured to have a series impedance that is at least N times the series impedance of the non-superconducting transformer when the superconducting transformer is operated at or above one or more of the critical current level and the critical temperature. N is greater than 1 and is selected to attenuate, in conjunction with an impedance of the non-superconducting transformer, the known fault current level by at least 10%.

Quantum-limited highly linear CMOS detector for computer tomography

The invention provides a CMOS CT detector design with high linearity, quantum-limited noise, good scalability, high fill factor with a single CMOS chip utilizing synchronous partial quantization. The CMOS CT detector includes a pixel array, digital column buses, analog column buses, column processing circuits, a shift register, a control signal generation circuit, and a reference generation circuit, and implements a synchronous partial quantization scheme with reset, integration and analog readout phases. Each pixel of the pixel array further includes a photodiode; an integration capacitor; an OPAMP; a reset switch; a comparator; a 1-bit dynamic random-access-memory (DRAM) cell; a circuit block for enabling subtraction of a substantially fixed amount of charge from the integrated photocharge if the integrated photovoltage increases beyond the reference voltage; an integration node; an analog buffer; and a switch coupled between the output of the DRAM cell and the digital column bus. The inclusion of a level-shifter and a current front-end improves the linearity of the detector.

Electricity transmission cooling system

A cooling system includes a first section of high temperature superconducting (HTS) cable configured to receive a first flow of coolant and to permit the first flow of coolant to flow therethrough. The system may further include a second section of high temperature super-conducting (HTS) cable configured to receive a second flow of coolant and to permit the second flow of coolant to flow therethrough. The system may further include a cable joint configured to couple the first section of HTS cable and the second section of HTS cable. The cable joint may be in fluid communication with at least one refrigeration module and may include at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable. Other embodiments and implementations are also within the scope of the present disclosure.

Method and device for approximating tissue

A wound closure assembly and method for its use. The wound closure assembly includes a curved inserter having a distal end and a proximal end, a filamentary element extending between a proximal end and a distal end, wherein the proximal end is coupled to the proximal end of the curved inserter, a first anchor coupled to the filamentary element between its first and second ends, and a second anchor positioned at the distal end of the filamentary element. The filamentary element is configured to form a slip knot between the first and second anchors so as to enable the distance between the first and second anchors to be decreased by pulling on the proximal end of the filamentary element. The distal end of the curved inserter is received within a channel in the first anchor that extends along its longitudinal length.

SUPERCONDUCTIVE POWER CORD SYSTEM CONFIGURED TO BE INCLUDED IN A PUBLIC ELECTRICAL NETWORK HAVING A KNOWN LEAKAGE CURRENT LEVEL

sistema de cabo elétrico supercondutor configurado de modo que seja incluído em uma rede elétrica pública tendo um nível conhecido de corrente de fuga. a presente invenção refere-se a um sistema de cabo elétrico supercondutor que é configurado de modo que seja incluído em uma rede elétrica pública tendo um nível conhecido de corrente de fuga. o sistema de cabo elétrico supercondutor inclui um caminho elétrico não-supercondutor interconectado entre um primeiro nó e um segundo nó da rede elétrica pública. um caminho elétrico supercondutor é interconectado entre o primeiro nó e o segundo nó da rede elétrica pública. o caminho elétrico supercondutor e o caminho elétrico não-supercondutor são eletricamente conectados em paralelo, e o caminho elétrico supercondutor tem uma impedância em série menor que o caminho elétrico não-supercondutor quando o caminho elétrico supercondutor for operado abaixo de um nível crítico de corrente e uma temperatura crítica. o caminho elétrico supercondutor é configurado de modo que tenha uma impedância em série que seja pelo menos n vezes a impedância em série do caminho elétrico nãosupercondutor quando o caminho elétrico supercondutor for operado em, ou acima de, um ou mais entre o nível crítico de corrente e a temperatura crítica supercondutora. n é maior que 1 e é selecionado de modo a atenuar, em conjunto com uma impedância do caminho elétrico não spercondutor, o nível conhecido de corrente de fuga em pelo menos10%. superconducting electrical cable system configured to be included in a public utility network having a known level of leakage current. The present invention relates to a superconducting electrical cable system that is configured to be included in a public utility network having a known level of leakage current. The superconducting electrical cable system includes a non-superconducting electrical path interconnected between a first node and a second node of the public grid. A superconducting electrical path is interconnected ...

Method and device for approximating tissue

A wound closure assembly and method for its use. The wound closure assembly includes a curved inserter having a distal end and a proximal end, a filamentary element extending between a proximal end and a distal end, wherein the proximal end is coupled to the proximal end of the curved inserter, a first anchor coupled to the filamentary element between its first and second ends, and a second anchor positioned at the distal end of the filamentary element. The filamentary element is configured to form a slip knot between the first and second anchors so as to enable the distance between the first and second anchors to be decreased by pulling on the proximal end of the filamentary element. The distal end of the curved inserter is received within a channel in the first anchor that extends along its longitudinal length.

High-current, compact flexible conductors containing high temperature superconducting tapes

Electricity transmission cooling system

A cooling system includes a first section of high temperature superconducting (HTS) cable configured to receive a first flow of coolant and to permit the first flow of coolant to flow therethrough. The system may further include a second section of high temperature superconducting (HTS) cable configured to receive a second flow of coolant and to permit the second flow of coolant to flow therethrough. The system may further include a cable joint configured to couple the first section of HTS cable and the second section of HTS cable. The cable joint may be in fluid communication with at least one refrigeration module and may include at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable. Other embodiments and implementations are also within the scope of the present disclosure.

Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Parallel HTS transformer device

A superconducting transformer system is configured to be included within a utility power grid having a known fault current level. The superconducting transformer system includes a non-superconducting transformer interconnected between a first node and a second node of the utility power grid. A superconducting transformer is interconnected between the first node and the second node of the utility power grid. The superconducting transformer and the non-superconducting transformer are electrically connected in parallel. The superconducting transformer has a lower series impedance than the non-superconducting transformer when the superconducting transformer is operated below a critical current level and a critical temperature. The superconducting transformer is configured to have a series impedance that is at least N times the series impedance of the non-superconducting transformer when the superconducting transformer is operated at or above one or more of the critical current level and the critical temperature. N is greater than 1 and is selected to attenuate, in conjunction with an impedance of the non-superconducting transformer, the known fault current level by at least 10%.

Method of fabricating plasma reactor parts

A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

Liquid crystal panel module cutting method and panel module assembly structure

一種液晶面板模組的裁切方法及面板模組組合結構，該方法包含：提供一液晶面板模組，該液晶面板模組包含一面板本體，以及一連接該面板本體的電路板單元，該電路板單元包括二第一電路板、二第二電路板。裁切該液晶面板模組並得到二個面板模組區塊，每一面板模組區塊具有一面板部、其中一第一電路板，以及其中一第二電路板。上述裁切方式簡單，易於進行。該等面板模組區塊的安裝場所可自由搭配運用，也可以藉由該等面板模組區塊間的排列與延伸方式，配合形成特殊形態的顯示器，故應用靈活度高。

Parallel connected hts fcl device

A superconducting electrical cable system is configured to be included within a utility power grid having a known fault current level. The superconducting electrical cable system includes a non- superconducting electrical path interconnected between a first node and a second node of the utility power grid. A superconducting electrical path is interconnected between the first node and the second node of the utility power grid. The superconducting electrical path and the non-superconducting electrical path are electrically connected in parallel, and the superconducting electrical path has a lower series impedance than the non-superconducting electrical path when the superconducting electrical path is operated below a critical current level and a critical temperature. The superconducting electrical path is configured to have a series impedance that is at least N times the series impedance of the non-superconducting electrical path when the superconducting electrical path is operated at or above one or more of the critical current level and the superconductor critical temperature. N is greater than 1 and is selected to attenuate, in conjunction with an impedance of the non- superconducting electrical path, the known fault current level by at least 10 %.

MULTIPLE COMPONENT WRAPPED POLYMER IMPLANT.

SE DESCRIBE UN PROCESO PARA DESPLEGAR UNA CONSTRUCCION MEDICA EN UNA CAVIDAD DEL CUERPO, DE MANERA QUE ACTUE, POR EJEMPLO, COMO STENT EN UN LUMEN CORPORAL. LA CONSTRUCCION SE USA FORMANDOSE UNA ESPIRAL A PARTIR DE UN FILAMENTO QUE TIENE UNA PARTE INTERIOR Y UNA PARTE EXTERIOR Y, A CONTINUACION, CALENTANDOLO MIENTRAS SE EXPANDE LA ESPIRAL, DE MANERA QUE SE FUNDA UNICAMENTE LA PARTE EXTERIOR. CUANDO LA PARTE FUNDIDA VUELVE A SOLIDIFICARSE CON LA ESPIRAL EN ESTADO EXPANDIDO, LA PARTE INTERIOR NO FUNDIDA PERO ESTIRADA MANTIENE LA INTEGRIDAD Y LA RESISTENCIA DE LA ESPIRAL CONTRA FUERZAS TALES COMO LAS DE COMPRESION, Y LA FORMA EXPANDIDA SE MANTIENE GRACIAS A LA ADHESIVIDAD DE LA PARTE EXTERIOR SOLIDIFICADA. A PROCESS TO DEPLOY A MEDICAL CONSTRUCTION IN A BODY CAVITY IS DESCRIBED, HOW IT ACTS, FOR EXAMPLE, AS A STENT IN A BODY LUMEN. THE CONSTRUCTION IS USED FORMING A SPIRAL FROM A FILAMENT THAT HAS AN INTERIOR PART AND AN EXTERNAL PART AND, BELOW, WARMING IT UP WHILE THE SPIRAL IS EXPANDED, SO THAT THE EXTERNAL PART IS BASED ONLY. WHEN THE FOUNDED PART IS SOLIDIFYED AGAINST THE SPIRAL IN THE EXPANDED STATE, THE UNINFORGED INNER PART BUT STRETCHED MAINTAINS THE INTEGRITY AND THE RESISTANCE OF THE SPIRAL AGAINST SUCH STRENGTHS AS COMPRESSION, AND THE EXPANDED FORM IS KEPT THANKS TO ADHES SOLIDIFIED OUTSIDE PART.

Fault current limiting hts cable and method of configuring same

A cryogenically-cooled HTS cable is configured to be included within a utility power grid having a maximum fault current that would occur in the absence of the cryogenically- cooled HTS cable. The cryogenically-cooled HTS cable includes a continuous liquid cryogen coolant path for circulating a liquid cryogen. A continuously flexible arrangement of HTS wires has an impedance characteristic that attenuates the maximum fault current by at least 10%. The continuously flexible arrangement of HTS wires is configured to allow the cryogenically-cooled HTS cable to operate, during the occurrence of a maximum fault condition, with a maximum temperature rise within the HTS wires that is low enough to prevent the formation of gas bubbles within the liquid cryogen.

Display method for background mapping

Barc shaping for improved fabrication of dual damascene integrated circuit features

Method, materials and structures are described for the fabrication of dual damascene features in integrated circuits. In via-first dual damascene fabrication, a bottom-antireflective-coating (“BARC”) is commonly deposited into the via and field regions surrounding the via, 107 . Subsequent trench etch with conventional etching chemistries typically results in isolated regions of BARC, 107 a , surrounded by “fencing” material, 108 , at the bottom of the via. Such fencing hinders conformal coating with barrier/adhesion layers and can reduce device yield. The present invention relates to the formation of a BARC plug, 107 c , partially filling the via and having a convex upper surface, 400 , prior to etching the trench. Such a BARC structure is shown to lead to etching without the formation of fencing and a clean dual damascene structure for subsequent coating. A directional, anisotropic etching of BARC, and more particularly, an ammonia plasma etch, is one convenient method of removing BARC and forming the desired convex upper surface.

Derailleur operating apparatus for bicycle

Method for detecting touch-point coordinate for used in a resistive touch panel

A touch-point detecting method is applicable to a resistive touch panel with a touch-point detecting apparatus comprising a plurality of switches. By selectively enabling and disabling those switches, the present method comprises the steps of determining whether an external force is exerted on the touch panel, determining whether the external force is within a predetermined threshold, producing X-coordinate, and producing Y-coordinate.

Vehicle infrared monitoring system for electrified railway catenary

LED lamp with remote phosphor and diffuser configuration utilizing red emitters

Turning cover of a detachable type and assembly method thereof

A removable cover assembly is to be assembled to the main body member of the electronic product. The main body member includes an upper housing and a lower housing. The lower housing has a groove of the rotation axis and at least one groove of the leading rail and the upper housing has a groove of the affixing buckling hook. The removable cover assembly includes a cover member and an affixing pushing cover, wherein the cover member includes a cover and a rotation axis that is affixed to both sides of the cover. The affixing pushing cover includes an affixing buckling hook and at least one leading rail, wherein the leading rail is located at the back side of the affixed pushing cover, and is with respect to the position of the groove of the leading rail. The affixing buckling hook is located on a side of the affixing pushing cover and is with respect to a position of a groove of the affixing buckling hook. During assembly, the rotation axis on the cover is engaged in tabling to the groove of the rotation axis, so that the cover member and the lower housing are in combination. In addition, the leading rail on the affixing pushing cover can slide along the groove of the leading rail until the affixing buckling hook and the groove of the affixing buckling hook are buckled up. The present invention can allow the user to promptly detach or attach the cover, according to the user's actual need.

Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Use of a multi-component coil medical construct

There is described a process for deploying a medical construct in a body cavity, so as to function for example as a stent in a body lumen. The construct is used by forming a coil from a strand that has an interior and an exterior portion, and thereafter heating while expanding the coil so as to melt only the exterior portion. When that melted portion resolidifies with the coil in the expanded state, the coil's integrity and resistance against forces such as compression is maintained by the unmelted but stretched interior portion, and the expanded shape is maintained by the adhesiveness of the solidified exterior portion.

Method for detecting touch-point coordinate for use in a resistive touch panel

The application of an external force on a resistive touch panel is determined through a pressure detection step in which two signals are produced and later compared to determine if the external force is effective. The first coordinate of a touch point at which the external force is exerted is detected followed by a second coordinate of the touch point.

Fault current limiting HTS cable and method of configuring same

Method and device for approximating tissue

Clean method of phase shifting mask

High-current, compact flexible conductors containing high temperature superconducting tapes

High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.

Fault Management of HTS Power Cable

A method and system for providing protection for a superconducting electrical cable located in a utility power network includes detecting a fault current on the superconducting electric cable, determining the cumulative total energy dissipated in the superconducting electrical cable from the fault current and at least one prior fault current over a predetermined time period, and determining whether to disconnect the superconducting electrical cable from the utility power network on the basis of the cumulative total energy dissipated.

Method for manufacturing a flexible optical plate, product and backlight module made therewith

A method for manufacturing a flexible optical plate includes steps of: (A) positioning a metallic mask on a surface of a mother substrate; (B) irradiating a carbon dioxide laser beam through the metallic mask to form cavities on the surface of the mother substrate; (C) coating a polymer material on the surface of the mother substrate to fill the cavities; and (D) drying the coated polymer material to form the flexible optical plate, the flexible optical plate having a substrate on the surface of the mother substrate and microstructures protruding from the substrate and each corresponding to one of the cavities.

Plasma-resistant ceramics with controlled electrical resistivity

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Method of coating semiconductor processing apparatus with protective yttrium-containing coatings

Management of energy cable fault

Un método y sistema para proporcionar protección a un cable eléctrico superconductor localizado en una red de energía de servicio público incluye detectar una corriente de falla sobre el cable eléctrico superconductor, determinar la energía total acumulativa disipada en el cable eléctrico superconductor de la corriente de falla y por lo menos una corriente de falla previa sobre un período de tiempo predeterminado, y determinar ya sea desconectar el cable eléctrico superconductor de la red de energía de servicio público sobre la base de la energía total acumulativa disipa

Characterizing circuit performance

Cyclic inhibitors of 11beta-hydroxysteroid dehydrogenase 1

Air conditioned fan

High-current, compact flexible conductors containing high temperature superconducting tapes

High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.

Method and apparatus for fabricating plasma reactor parts

Superconducting cable assembly and method of assembly

An HTS cable assembly is provided which includes a cryostat or housing, an HTS wire bundle disposed longitudinally within the cryostat, and plural support members disposed between the HTS wire bundle and the cryostat. The support members are elongate, tubular members having resiliency in both the axial and radial directions. The support members are disposed between the HTS wire bundle and the inner surface of the cryostat in an arrangement that maintains and supports the HTS wire bundle in a spaced-apart relationship with respect to the inner surface of the cryostat. In addition, the plural support members are configured to substantially prevent relative movement between the HTS wire bundle and the cryostat.

Parallel connected hts fcl device

LED element

Use of a multi-component coil medical construct

There is described a process for deploying a medical construct in a body cavity, so as to function for example as a stent in a body lumen. The construct is used by forming a coil from a strand that has an interior and an exterior portion, and thereafter heating while expanding the coil so as to melt only the exterior portion. When that melted portion resolidifies with the coil in the expanded state, the coil's integrity and resistance against forces such as compression is maintained by the unmelted but stretched interior portion, and the expanded shape is maintained by the adhesiveness of the solidified exterior portion.

Method and apparatus for removing polymer from a substrate

A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.

Process for photoresist descumming and stripping in semiconductor applications by nh3 plasma

In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor susbtrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlaying layer of an organic dielectric.

Erosion resistance enhanced quartz used in plasma etch chamber

A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

Monitoring substrate processing using reflected radiation

A substrate processing apparatus (27) has a chamber (35) capable of processing a substrate (20), a radiation source (58) to provide a radiation, a radiation polarizer adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation of a feature being processed on the substrate, a radiation detector (54) to detect radiation reflected from the substrate during processing and generate a signal, and a controller (100) to process the signal.

Improved structure of object bearing framework

Motor, stator coil module thereof and cooling fan including the motor

Carbamate and urea inhibitors of 11β-hydroxysteroid dehydrogenase 1

Automatic-flushing and water-saving toilet

Printing equipment and mobile electronic device thereof

Fault Current Limiting HTS Cable and Method of Configuring Same

A cryogenically-cooled HTS cable is configured to be included within a utility power grid having a maximum fault current that would occur in the absence of the cryogenically-cooled HTS cable. The cryogenically-cooled HTS cable includes a continuous liquid cryogen coolant path for circulating a liquid cryogen. A continuously flexible arrangement of HTS wires has an impedance characteristic that attenuates the maximum fault current by at least 10%. The continuously flexible arrangement of HTS wires is configured to allow the cryogenically-cooled HTS cable to operate, during the occurrence of a maximum fault condition, with a maximum temperature rise within the HTS wires that is low enough to prevent the formation of gas bubbles within the liquid cryogen.

Looped tissue-grasping device

A looped tissue-grasping device includes a looped suture having two ends swaged to a needle and a plurality of tissue-grasping elements provided on the looped suture. The device is used for joining bodily tissue in surgical applications and wound repair. The configuration of the tissue-grasping elements permit movement of the suture through the tissue in the direction the needle is pulled and, prevent slippage or movement of the suture in a direction opposite to the direction of movement of the needle.

Fault management of HTS power cable

Parallel connected hts fcl device

A superconducting electrical cable system is configured to be included within a utility power grid having a known fault current level. The superconducting electrical cable system includes a non- superconducting electrical path interconnected between a first node and a second node of the utility power grid. A superconducting electrical path is interconnected between the first node and the second node of the utility power grid. The superconducting electrical path and the non-superconducting electrical path are electrically connected in parallel, and the superconducting electrical path has a lower series impedance than the non-superconducting electrical path when the superconducting electrical path is operated below a critical current level and a critical temperature. The superconducting electrical path is configured to have a series impedance that is at least N times the series impedance of the non-superconducting electrical path when the superconducting electrical path is operated at or above one or more of the critical current level and the superconductor critical temperature. N is greater than 1 and is selected to attenuate, in conjunction with an impedance of the non- superconducting electrical path, the known fault current level by at least 10 %.