07-06-2012 дата публикации
Номер: US20120139086A1
An example embodiment relates to a patterning process including forming a photoresist pattern on a structure. The photoresist pattern includes a cross-linked surface that is insoluble in an organic solvent. The process also includes spin-on coating a dielectric layer on the photoresist pattern, partially removing the dielectric layer to form a plurality of dielectric spacers surrounding the photoresist pattern, and removing the photoresist pattern. 1. A method to reduce intermixing between films of a double pattern technology (DPT) process , comprising: [ 'the photoresist layer including a unit including a leaving group, and', 'forming a photoresist layer on a structure,'}, 'performing a lithography process to pattern and cross-link a surface of the photoresist layer;, 'forming a photoresist pattern by,'}spin-on coating an oxide layer on the photoresist pattern; andprocessing the oxide layer to form a plurality of oxide spacers around the photoresist pattern.2. A double pattern technology (DPT) process comprising the method according to claim 1 , whereinthe oxide layer includes silicon oxide, andthe processing the oxide layer includes partially etching the oxide layer to form the plurality of oxide spacers, andthe process further includes removing the photoresist pattern to form an oxide spacer pattern.3. The process according to claim 2 , wherein 'the semiconductor layer is on an oxide film of the structure, and', 'the oxide spacer pattern is on a semiconductor layer of the structure,'} forming a semiconductor pattern by etching the semiconductor layer using the oxide spacer pattern as a mask, and', 'forming an oxide pattern by etching the oxide film using the semiconductor pattern as a mask., 'the process further includes,'}4. The method according to claim 1 , whereina weight ratio of the unit including the leaving group is 5 wt % to 20 wt % with respect to a total weight of the photoresist layer.5. The method according to claim 1 , whereinthe unit including the ...
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