13-06-2013 дата публикации
Номер: US20130146890A1
A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure. 1. A high electron mobility transistor comprising:a substrate;a first semiconductor layer on the substrate;a second semiconductor layer on the first semiconductor layer;a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer; anda gate structure between the source and the drain,the gate structure including a reverse diode gate structure and a gate electrode.2. The high electron mobility transistor of claim 1 , whereinthe reverse diode gate structure includes a first layer, andthe first layer includes a p-type group III nitride semiconductor.3. The high electron mobility transistor of claim 2 , whereinthe first layer is doped with a p-type dopant, andfirst layer includes at least one of GaN, InGaN, AlGaN, AlInN, and AlGaInN.4. The high electron mobility transistor of claim 2 , wherein the gate structure includes a second layer on the first layer.5. The high electron mobility transistor of claim 4 , wherein the second layer includes one of:an group III nitride semiconductor doped with an n-type dopant,an undoped group III nitride semiconductor, anda group III nitride semiconductor doped with a p-type dopant at a concentration lower than a p-type dopant concentration in the first layer.6. The high electron mobility transistor of claim 5 , wherein the second layer includes at least one of GaN claim 5 , InGaN claim 5 , AlGaN claim 5 , AlInN claim 5 , and AlGaInN.7. The high electron mobility transistor of claim 5 , whereinthe second layer includes at least one of GaN, InGaN, AlGaN, AlInN, and AlGaInN, andthe ...
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