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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 60. Отображено 53.
12-01-2012 дата публикации

Nitride-based semiconductor device and method for manufacturing the same

Номер: US20120007049A1
Автор: Jung Hee Lee, Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers.

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Номер записи: 1
12-01-2012 дата публикации

Nitride-based semiconductor device and method for manufacturing the same

Номер: US20120007053A1
Автор: Jung Hee Lee, Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer.

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Номер записи: 2
25-10-2012 дата публикации

Nitride semicondutor device and manufacturing method thereof

Номер: US20120267642A1
Автор: Jeon Woo Chul, Park Ki Yeol, Park Young Hwan
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. 1. A nitride semiconductor device comprising:a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside;a drain electrode in ohmic contact with the nitride semiconductor layer;a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode;a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; anda gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween.2. The nitride semiconductor device according to claim 1 , wherein the nitride semiconductor layer comprises:a first nitride layer over the substrate wherein the first nitride layer contains a gallium nitride (GaN)-based material; anda second nitride layer in heterojunction with and on the first nitride layer ...

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Номер записи: 3
25-10-2012 дата публикации

Nitride semiconductor device and manufacturing method thereof

Номер: US20120267686A1
Автор: Jeon Woo Chul, Park Ki Yeol, Park Young Hwan
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. 1. A nitride semiconductor device comprising:a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside;a drain electrode in ohmic contact with the nitride semiconductor layer;a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside;a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; anda gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween.2. The nitride semiconductor device according to claim 1 , wherein the portion of the gate electrode being formed over the drain-side edge portion of the source electrode is formed to cover at ...

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Номер записи: 4
29-11-2012 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME

Номер: US20120299042A1
Автор: CHO Myong Soo, Choi Pun Jae, LEE Jin Hyun, Park Ki Yeol
Принадлежит:

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer. 1. A semiconductor light emitting device having a first conductivity type semiconductor layer , an active layer , a second conductivity type semiconductor layer , a second electrode layer , and insulating layer , a first electrode layer , and a conductive substrate sequentially laminated ,wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, andthe first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.2. The semiconductor light emitting device of claim 1 , further comprising an electrode pad unit formed at the exposed area of the second electrode layer.3. The semiconductor light emitting device of claim 1 , ...

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Номер записи: 5
10-01-2013 дата публикации

NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR POWER DEVICE

Номер: US20130009165A1
Автор: Jeon Woo Chul, Park Ki Yeol, Park Young Hwan
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein are a nitride semiconductor device, a method for manufacturing the same, and a nitride semiconductor power device. According to an exemplary embodiment of the present invention, a nitride semiconductor device includes: a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas (2DEG) channel formed therein; a D-mode FET that includes a gate electrode Schottky-contacting with the nitride semiconductor layer to form a normally-on operating depletion-mode (D-mode) HEMT structure; and a Schottky diode part that includes an anode electrode Schottky-contacting with the nitride semiconductor layer and increases a gate driving voltage of the D-mode FET, the anode electrode being connected to the gate electrode of the D-mode FET. In addition, the nitride semiconductor power device and the method for manufacturing a nitride semiconductor device are proposed. 1. A nitride semiconductor device , comprising:a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas (2DEG) channel formed therein;a D-mode FET that includes a gate electrode Schottky-contacting with the nitride semiconductor layer to form a normally-on operating depletion-mode (D-mode) HEMT structure; anda Schottky diode part that includes an anode electrode Schottky-contacting with the nitride semiconductor layer and increases a gate driving voltage of the D-mode FET, the anode electrode being connected to the gate electrode of the D-mode FET.2. The nitride semiconductor device according to claim 1 , wherein the 2DEG channel is not formed between the D-mode FET and the Schottky diode part.3. The nitride semiconductor device according to claim 1 , wherein a source electrode and a drain electrode of the D-mode FET ohmic-contact with the nitride semiconductor layer.4. The nitride semiconductor device according to claim 1 , wherein a cathode electrode of the Schottky diode part ...

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Номер записи: 6
14-02-2013 дата публикации

VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20130037849A1
Автор: CHO Myong Soo, Choi Pun Jae, LEE Si Hyuk, Park Ki Yeol, SONG Sang Yeob
Принадлежит: Samsung Electronics

A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface. 1. A method of manufacturing a vertical structure light emitting diode device , the method comprising:sequentially forming a first conductivity type group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth;bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer;removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; andforming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth,wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.2. The method of claim 1 , wherein the bonding a conductive substrate comprises:forming a first metal bonding layer on the second conductivity type III-V group compound semiconductor layer;forming a second metal bonding ...

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Номер записи: 7
07-03-2013 дата публикации

Semiconductor device having schottky diode structure

Номер: US20130056797A1
Автор: Jung Hee Lee, Ki Yeol Park, Woo Cul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.

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Номер записи: 8
04-04-2013 дата публикации

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20130082276A1
Автор: Hong Seok Yoon, Jeon Woo Chul, Park Ki Yeol, Park Young Hwan
Принадлежит:

The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers is provided. Further, a method of manufacturing a nitride semiconductor device is provided. 1. A nitride semiconductor device comprising:a nitride semiconductor layer formed by a heterojunction of a first nitride layer and a second nitride layer, which includes a material with a wider energy band gap than a material of the first nitride layer, and having a two-dimensional electron gas (2DEG) channel formed near a junction interface;a source electrode in ohmic contact with the nitride semiconductor layer;a drain electrode in ohmic contact with the nitride semiconductor layer while being spaced apart from the source electrode;a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes to be spaced apart from the respective source and drain electrodes;an n-type nitride layer formed on the p-type nitride layer; anda gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers.2. The nitride semiconductor device according ...

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Номер записи: 9
04-04-2013 дата публикации

Nitride semiconductor device and manufacturing method thereof

Номер: US20130082277A1
Автор: Ki Yeol Park, Seok Yoon HONG, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

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Номер записи: 10
25-04-2013 дата публикации

2DEG SCHOTTKY DIODE FORMED IN NITRIDE MATERIAL WITH A COMPOSITE SCHOTTKY/OHMIC ELECTRODE STRUCTURE AND METHOD OF MAKING THE SAME

Номер: US20130102135A1
Автор: Jeon Woo Chul, LEE Jung Hee, Park Ki Yeol, Park Young Hwan
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed. 1. A method for manufacturing a semiconductor device comprising:preparing a base substrate;forming a semiconductor layer on the base substrate;forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; andforming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines,wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines,forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines,one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed,forming the ohmic electrode lines and the ohmic electrode plate is made through an in-situ scheme, andforming the ...

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Номер записи: 11
06-06-2013 дата публикации

Method of manufacturing nitride semiconductor device

Номер: US20130143373A1
Автор: Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

A method of manufacturing a nitride semiconductor device including: forming a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a 2DEG channel inside; forming a drain electrode in ohmic contact with the nitride semiconductor layer and a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, wherein the source electrode has an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; forming a dielectric layer on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and forming a gate electrode on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed on the dielectric layer over a drain-side edge portion of the source electrode.

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Номер записи: 12
13-06-2013 дата публикации

Monolithic semiconductor device and method for manufacturing the same

Номер: US20130146888A1
Автор: Ki Yeol Park, Seok Yoon HONG, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.

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Номер записи: 13
13-06-2013 дата публикации

NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20130146983A1
Автор: Hong Seok Yoon, Jeon Woo Chul, Park Ki Yeol, Park Young Hwan
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. 1. A nitride based semiconductor device , comprising:a substrate;a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer formed on the substrate;an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; anddrain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer.2. The nitride based semiconductor device as set forth in claim 1 , further comprising a buffer layer formed between the substrate and the lower nitride based semiconductor layer.3. The nitride based semiconductor device as set forth in claim 1 , wherein the isolation area is provided in lower parts of the drain electrodes claim 1 , lower parts of the source electrodes claim 1 , and lower parts of gate pads of the gate electrodes.4. The nitride based semiconductor device as set forth in claim 1 , wherein the isolation area is formed by an area into which an inert element is implanted.5. The nitride based semiconductor device as set forth in claim 1 , wherein the isolation area includes an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer with respect to the lower parts of the drain electrodes claim 1 , the source electrodes claim 1 , and the gate pads of the gate electrodes and the isolation area is provided to contact the lower parts of the drain electrodes ...

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Номер записи: 14
23-01-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20140021510A1
Автор: Choi Hyuk-soon, Ha Jong-bong, JEON Woo-chul, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith. 1. A high electron mobility transistor comprising:a channel layer;a channel supply layer on the channel layer;a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer;a gate electrode between the source electrode and the drain electrode; anda source pad and a drain pad that electrically contact the source electrode and the drain electrode, respectively,wherein at least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and the drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.2. The high electron mobility transistor of claim 1 , whereinthe source pad includes a contact portion that electrically contacts the source electrode, andthe source pad includes an insertion portion that extends into the source electrode.3. The high electron mobility transistor of claim 2 , wherein the insertion portion of the source pad penetrates the source electrode.4. The high electron mobility transistor of claim 3 , further comprising:a substrate, wherein the channel layer is on the substrate.5. The high electron mobility transistor of claim 4 , wherein ...

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Номер записи: 15
23-01-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20140021511A1
Автор: Choi Hyuk-soon, Ha Jong-bong, Hwang In-jun, HWANG Sun-kyu, JEON Woo-chul, KIM Jong-Seob, KIM Joon-yong, KIM Kyoung-yeon, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode. 1. A high electron mobility transistor (HEMT) comprising:a channel layer;a channel supply layer on the channel layer,an upper surface of the channel supply layer defining a Schottky electrode accommodation unit;a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer;a gate electrode between the source electrode and the drain electrode such that the Schottky electrode accommodation unit of the channel supply layer is between the gate electrode and the drain electrode; and the Schottky electrode forming a Schottky contact with the channel supply layer, and', 'the Schottky electrode is electrically connected to the source electrode., 'at least part of a Schottky electrode in the Schottky electrode accommodation unit of the channel supply layer,'}2. The HEMT of claim 1 , wherein the Schottky electrode accommodation unit is a recess defined by the upper surface of the channel supply layer.3. The HEMT of claim 2 , wherein the Schottky electrode accommodation unit is separated from an interface between the channel layer and the channel supply layer.4. The HEMT of claim 3 , wherein a distance from a bottom portion of the Schottky electrode accommodation unit to the interface between the channel layer and the channel supply layer is maintained at a level at which a ...

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Номер записи: 16
23-01-2014 дата публикации

Nitride-based semiconductor device

Номер: US20140021514A1
Автор: Jae-joon Oh, Jai-Kwang Shin, Ki-Yeol Park, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

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Номер записи: 17
13-02-2014 дата публикации

High electron mobility transistor

Номер: US20140042449A1
Автор: Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Jong-Seob Kim, Ki-Yeol Park, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

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Номер записи: 18
20-02-2014 дата публикации

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер: US20140048850A1
Автор: Ha Jong-bong, JEON Woo-chul, OH Jae-joo, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other. 1. A semiconductor device comprising:a substrate;a high electron mobility transistor (HEMT) on a first region of the substrate, the HEMT including a semiconductor layer; anda diode on a second region of the substrate,the diode being electrically connected to the HEMT.2. The semiconductor device of claim 1 , wherein the HEMT includes:a source electrode electrically connected to a first region of the semiconductor layer;a drain electrode electrically connected to a second region of the semiconductor layer; anda gate electrode on the semiconductor layer between the source electrode and the drain electrode.3. The semiconductor device of claim 2 , wherein an upper surface of the substrate contacts one of the source electrode and the drain electrode.4. The semiconductor device of claim 3 , whereinthe source electrode is spaced apart from the substrate, andthe drain electrode contacts the substrate and the semiconductor layer.5. The semiconductor device of claim 1 , wherein the semiconductor layer includes a channel layer and a channel supply layer.6. The semiconductor device of claim 1 , wherein the semiconductor layer includes a gallium nitride (GaN)-based material.7. The semiconductor device of claim 1 , wherein the diode is a Schottky diode.8. The semiconductor device of claim 7 , wherein the diode includes:an anode that forms a Schottky contact with the substrate; anda ...

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Номер записи: 19
20-02-2014 дата публикации

ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME

Номер: US20140049296A1
Автор: JEON Woo-chul, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode. 1. An electronic device comprising:a first transistor having a normally-on characteristic;a second transistor connected to the first transistor, the second transistor having a normally-off characteristic;a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; anda switching unit configured to apply a switching signal to the second transistor.2. The electronic device of claim 1 , wherein the first transistor is a high electron mobility transistor (HEMT).3. The electronic device of claim 2 , wherein the first transistor is a nitride based HEMT.4. The electronic device of claim 3 , wherein the first transistor includes a gallium nitride based material.5. The electronic device of claim 1 , wherein the second transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET).6. The electronic device of claim 5 , wherein the second transistor is a silicon (Si) based MOSFET.7. The electronic device of claim 1 , wherein the first transistor and the second transistor are connected to each other in a cascode configuration.8. The electronic device of claim 1 , wherein the constant voltage application unit includes:a constant current source connected to the gate of the first transistor; anda diode connected between the constant current source and the gate ...

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Номер записи: 20
06-03-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20140061725A1
Автор: Ha Jong-bong, HWANG Sun-kyu, JEON Woo-chul, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer. 1. A high electron mobility transistor comprising:a first channel layer; 'the second channel layer forming a PN junction with the first channel layer;', 'a second channel layer on the first channel layer,'}a channel supply layer on the second channel layer; 'the drain electrode contacting at least one of the second channel layer and the channel supply layer;', 'a drain electrode spaced apart from the first channel layer,'}a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer; and 'the gate electrode unit having a normally-off structure.', 'a gate electrode unit between the source electrode and the drain electrode,'}2. The high electron mobility transistor of claim 1 , whereinthe first channel layer is a p-type semiconductor layer, andthe second channel layer is an n-type semiconductor layer.3. The high electron mobility transistor of claim 2 , wherein the first channel layer is a p-type doped GaN layer.4. The high electron mobility transistor of claim 2 , wherein the second channel layer is one of an undoped GaN layer and an n-type doped GaN layer.5. The high electron mobility transistor of claim 1 , whereinat least one of the channel supply layer and the second channel ...

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Номер записи: 21
03-04-2014 дата публикации

POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20140091312A1
Автор: JEON Woo-chul, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит:

A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas. 1. A power switching device comprising:a substrate;a channel forming layer which is formed on the substrate and which includes a 2-dimensional electron gas (2DEG);a channel supply layer which corresponds to the 2DEG at the channel forming layer;a cathode coupled to a first end of the channel supply layer; andan anode coupled to a second end of the channel supply layer, the channel forming layer comprising a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.2. The power switching device of claim 1 , further comprising:a plurality of semiconductor layers on the channel supply layer,the plurality of semiconductor layers corresponding to the plurality of depletion areas, respectively.3. The power switching device of claim 1 , whereinthe channel supply layer includes a plurality of recesses, andthe plurality of recesses correspond to the plurality of depletion areas, respectively.4. The power switching device of claim 1 , whereinthe channel supply layer includes a plurality of holes to expose respective ones of the plurality of depletion areas, andthe plurality of holes correspond to the plurality of depletion areas, respectively.5. The power switching device of claim 2 , whereinthe anode contacts the plurality of semiconductor layers, andthe anode covers at least a portion of each of the semiconductor layers.6. The power ...

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Номер записи: 22
03-04-2014 дата публикации

NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR

Номер: US20140091363A1
Автор: HWANG Sun-kyu, JEON Woo-chul, KIM Joon-yong, KIM Kyoung-yeon, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer. 1. A normally-off high electron mobility transistor (HEMT) comprising:a channel layer including a first nitride semiconductor; the channel supply layer including a second nitride semiconductor,', 'the channel supply layer configured to induce a two-dimensional electron gas (2DEG) in the channel layer;, 'a channel supply layer on the channel layer,'}a source electrode and a drain electrode at sides of the channel supply layer; the depletion-forming layer configured to form a depletion region in at least a partial region of the 2DEG,', 'the depletion-forming layer having at least two thicknesses;, 'a depletion-forming layer on the channel supply layer,'}a gate insulation layer on the depletion-forming layer; and 'the gate electrode contacting the depletion-forming layer.', 'a gate electrode on the gate insulation layer,'}2. The normally-off HEMT of claim 1 , whereinthe depletion-forming layer includes a first part having a first thickness, andthe depletion-forming layer includes a second part at a side of the first part and,the depletion-forming layer includes a third part at a different side of the first part,the second part and the third part having a second thicknesses.3. ...

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Номер записи: 23
10-04-2014 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME

Номер: US20140097458A1
Автор: CHO Myong Soo, CHOI Pun Jae ., LEE Jin Hyun, Park Ki Yeol
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer. 118.-. (canceled)19. A semiconductor light emitting device having a first conductivity type semiconductor layer , an active layer , a second conductivity type semiconductor layer , a second electrode layer , and insulating layer , a first electrode layer , and a conductive substrate sequentially laminated ,wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, andthe first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.20. The semiconductor light emitting device of claim 19 , further comprising an electrode pad unit formed at the exposed area of the second electrode layer.21. The semiconductor light emitting ...

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Номер записи: 24
17-04-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME

Номер: US20140103969A1
Автор: Ha Jong-bong, JEON Woo-chul, KIM Jong-Seob, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other. 1. A high electron mobility transistor (HEMT) comprising:a channel layer including a first semiconductor material; the channel supply layer including a second semiconductor material,', 'the channel supply layer configured to induce a two-dimensional electron gas (2 DEG) in the channel layer;, 'a channel supply layer on the channel layer,'}a source electrode and a drain electrode at both sides of the channel supply layer; 'the depletion-forming layer configured to form a depletion region in the 2 DEG;', 'a depletion-forming layer on the channel supply layer,'}a first gate electrode on the depletion-forming layer,the first gate electrode between the source electrode and the drain electrode; andat least one second gate electrode separated from the first gate electrode on the depletion-forming layer and between the source electrode and the drain electrode.2. The HEMT of claim 1 , whereinthe HEMT includes one second gate electrode,the second gate electrode is a floating electrode, andthe first and second gate electrodes are configured such that applying a first gate voltage to the first gate electrode induces a second gate voltage in the second gate electrode.3. The HEMT of claim 2 , whereinthe first gate electrode and the second gate electrode are connected to each other by the depletion-forming layer, ...

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Номер записи: 25
19-02-2015 дата публикации

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same

Номер: US20150048421A1
Автор: Hyo-ji CHOI, Jae-joon Oh, Jai-Kwang Shin, Ki-Yeol Park, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

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Номер записи: 26
05-06-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING PLURALITY OF GATE ELECTRODES

Номер: US20140151747A1
Автор: Ha Jong-bong, HWANG Sun-kyu, JEON Woo-chul, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode. 1. A high electron mobility transistor comprising:a channel layer comprising a first semiconductor material; the channel supply layer comprising a second semiconductor material,', 'the channel supply layer configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, and', 'an upper surface of the channel supply layer defining a gate electrode receiving part;, 'a channel supply layer on the channel layer,'}source and drain electrodes spaced apart from each other on the channel layer;a first gate electrode in the gate electrode receiving part and between the source electrode and the drain electrode; 'the at least one second gate electrode between the source electrode and the first gate electrode.', 'at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part,'}2. The high electron mobility transistor of claim 1 , whereinthe at least one second gate electrode includes a floating electrode, andthe first gate electrode is configured to induce a second gate voltage into the floating electrode if a first gate voltage is applied ...

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Номер записи: 27
05-06-2014 дата публикации

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20140151749A1
Автор: Choi Hyuk-soon, Hwang In-jun, JEON Woo-chul, KIM Jong-Seob, Oh Jae-joon, PARK Ki-yeol, PARK Young-hwan, Shin Jai-kwang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode. 1. A high electron mobility transistor (HEMT) comprising:a channel layer;a channel supply layer on the channel layer;a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer;a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode;a first depletion-forming layer between the gate electrode and the channel supply layer; andat least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode,the at least one second depletion-forming layer being electrically connected to the source electrode.2. The HEMT of claim 1 , whereina thickness of the at least one second depletion-forming layer is less than a thickness of the first depletion-forming layer.3. The HEMT of claim 2 , wherein the thickness of the at least one second depletion-forming layer is about 20% to about 30% of the thickness of the first depletion-forming layer.4. The HEMT of claim 2 , whereinthe channel layer includes a two-dimensional electron gas (2 DEG), anda density of the two-dimensional electron gas (2 DEG) below the at least one second depletion-forming layer is about 90% of a density of a 2 DEG in an adjacent region of the channel layer.5. ...

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Номер записи: 28
28-08-2014 дата публикации

Method and apparatus for controlling a gate voltage in high electron mobility transistor

Номер: US20140240026A1
Автор: Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Joon-Yong Kim, Ki-Yeol Park, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

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Номер записи: 29
06-08-2015 дата публикации

Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same

Номер: US20150221843A1
Автор: Jae In SIM, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi, Seok Min Hwang
Принадлежит: Individual

There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

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Номер записи: 30
02-09-2010 дата публикации

Semiconductor-light emitting apparatus i.e. LED-device, for use as e.g. backlight unit of large TV, has contact hole connected with semiconductor layer and extending from surface of electrode layer to part of semiconductor layer

Номер: DE102009010480A1
Автор: Jin Hyun Suwon Lee, Ki Yeol Park, Myong Soo Suwon Cho, Pun Jae Yongin Choi
Принадлежит: Samsung Electro Mechanics Co Ltd

The apparatus (100) has a conductive substrate (150), and an exposed region formed on a boundary surface between an electrode layer (120) and a conductivity type semiconductor layer (111) that includes another electrode layer (140) and a contact hole (114). The contact hole is electrically connected with another conductivity type semiconductor layer (113), and located opposite to the former conductivity type semiconductor layer and active layers (112). The contact hole extends from a surface of the latter electrode layer to a part of the latter conductivity type semiconductor layer. An independent claim is also included for a method for manufacturing a semiconductor-light emitting apparatus.

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Номер записи: 31
21-06-2011 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: US7964881B2
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: Samsung LED Co Ltd

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 32
28-04-2015 дата публикации

Semiconductor light emitting device

Номер: US9018666B2
Автор: Ki Yeol Park, Myong Soo Cho, Pun Jae Choi, Sang Bum Lee, Seon Young Myoung
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

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Номер записи: 33
07-01-2014 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: US8624276B2
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 34
26-07-2011 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: US7985976B2
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: Samsung LED Co Ltd

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 35
11-09-2012 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: US8263987B2
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 36
28-06-2016 дата публикации

Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same

Номер: US9379288B2
Автор: Jae In SIM, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi, Seok Min Hwang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

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Номер записи: 37
04-06-2019 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: USRE47417E1
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 38
17-03-2015 дата публикации

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

Номер: US8981395B2
Автор: Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

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Номер записи: 39
11-11-2014 дата публикации

2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same

Номер: US8883599B2
Автор: Jung Hee Lee, Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed.

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Номер записи: 40
02-04-2014 дата публикации

Normally-off high electron mobility transistor

Номер: EP2713402A2
Автор: Jae-joon Oh, Jai-Kwang Shin, Joon-Yong Kim, Ki-Yeol Park, Kyoung-Yeon Kim, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A normally-off high electron mobility transistor (HEMT) includes: a channel layer (120) having a first nitride semiconductor, a channel supply layer (130) on the channel layer, a source electrode (161) and a drain electrode (162) at sides of the channel supply layer, a depletion-forming layer (140) on the channel supply layer, a gate insulating layer (150) on the depletion-forming layer, and a gate electrode (170) on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

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Номер записи: 41
18-11-2014 дата публикации

Normally-off high electron mobility transistor

Номер: US8890212B2
Автор: Jae-joon Oh, Jai-Kwang Shin, Joon-Yong Kim, Ki-Yeol Park, Kyoung-Yeon Kim, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

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Номер записи: 42
10-03-2011 дата публикации

Semiconductor component and method for manufacturing of the same

Номер: US20110057233A1
Автор: Jung Hee Lee, Ki Won Kim, Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.

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Номер записи: 43
05-01-2016 дата публикации

High electron mobility transistor and method of manufacturing the same

Номер: US9231093B2
Автор: Hyuk-soon Choi, In-jun Hwang, Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Jong-Seob Kim, Joon-Yong Kim, Ki-Yeol Park, Kyoung-Yeon Kim, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

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Номер записи: 44
13-01-2016 дата публикации

Normally-off high electron mobility transistor

Номер: EP2713402A3
Автор: Jae-joon Oh, Jai-Kwang Shin, Joon-Yong Kim, Ki-Yeol Park, Kyoung-Yeon Kim, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A normally-off high electron mobility transistor (HEMT) includes: a channel layer (120) having a first nitride semiconductor, a channel supply layer (130) on the channel layer, a source electrode (161) and a drain electrode (162) at sides of the channel supply layer, a depletion-forming layer (140) on the channel supply layer, a gate insulating layer (150) on the depletion-forming layer, and a gate electrode (170) on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

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Номер записи: 45
22-11-2011 дата публикации

Light emitting device and package having the same for maximizing light emitting area

Номер: US8063407B2
Автор: Jin Hyun Lee, Ki Yeol Park, Pun Jae Choi, Seon Young Myoung, Si Hyuk Lee
Принадлежит: Samsung LED Co Ltd

There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

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Номер записи: 46
10-11-2022 дата публикации

Process for manufacturing a compound semiconductor LED

Номер: DE102009017148B4
Автор: Ki Yeol Park, Myong Soo Cho, Pun Jae Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Verfahren zur Herstellung einer Verbindungshalbleiter-LED, umfassend die Schritte:Ausbilden einer n-Typ-Halbleiterschicht, einer aktiven Schicht und einer p-Typ-Halbleiterschicht in direkter Folge auf einem Wachstumssubstrat;Vorbereiten eines Si-Al-Substrats mit einer Schutzschicht, die auf der Ober- und Unterseite des Si-Al Substrats unter Verwendung eines elektrisch leitenden Dielektrikums ausbildet wird, wobei der Schritt des Vorbereitens des Si-Al-Substrats ein Freilegen einiger Abschnitte auf der Oberseite des Si-Al-Substrats durch Entfernen einiger Schutzschichtabschnitte umfasst;Ausbilden einer elektrisch leitenden Schicht auf der Oberseite des Si-Al-Substrats, umfassend die Schutzschicht;Bonden der elektrisch leitenden Schicht, die auf der Oberseite des Si-Al-Substrats ausgebildet wird, an die p-Typ-Halbleiterschicht; undSeparieren des Wachstumssubstrats von der n-Typ-Halbleiterschicht. A method of manufacturing a compound semiconductor LED, comprising the steps of:forming an n-type semiconductor layer, an active layer and a p-type semiconductor layer in direct order on a growth substrate;preparing a Si-Al substrate having a protective layer formed on the top and bottom of the Si-Al substrate is formed using an electrically conductive dielectric, wherein the step of preparing the Si-Al substrate comprises exposing some portions on top of the Si-Al substrate by removing some protective layer portions;forming an electroconductive layer on top of the Si-Al substrate including the protective layer;bonding the electroconductive layer formed on top of the Si-Al substrate to the p-type semiconductor layer; andseparating the growth substrate from the n-type semiconductor layer.

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Номер записи: 47
29-09-2015 дата публикации

High electron mobility transistor including plurality of gate electrodes

Номер: US9147738B2
Автор: Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Ki-Yeol Park, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

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Номер записи: 48
03-05-2012 дата публикации

Semiconductor component and method for its production

Номер: DE102010054722A1
Автор: Jung Hee Lee, Ki Yeol Park, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

Es wird ein Halbleiterbauteil vorgeschlagen, umfassend: ein Grundsubstrat; eine auf dem Grundsubstrat gebildete Halbleiterschicht mit einem Mesa-Vorsprung, der eine Aufnahmenut umfasst; eine Source-Elektrode und eine Drain-Elektrode, die voneinander beabstandet auf der Halbleiterschicht angeordnet sind; wobei die Source-Elektrode einen Source-Abschnitt und die Drain-Elektrode einen Drain-Abschnitt aufweist; und eine von der Source-Elektrode und der Drain-Elektrode isolierte Gate-Elektrode mit einer vertieft in der Aufnahmenut angeordneten Vertiefung, wobei der Mesa-Vorsprung eine Supergitterstruktur aufweist umfassend wenigstens eine Rinne an einer Zwischenfläche zwischen dem Mesa-Vorsprung und der Source-Elektrode und zwischen dem Mesa-Vorsprung und der Drain-Elektrode, und wobei der Source-Abschnitt und der Drain-Abschnitt in der Rinne aufgenommen sind. A semiconductor device is proposed, comprising: a base substrate; a semiconductor layer formed on the base substrate having a mesa protrusion including a receiving groove; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; wherein the source electrode has a source portion and the drain electrode has a drain portion; and a gate electrode, which is insulated from the source electrode and the drain electrode and has a recess disposed in the receiving groove, wherein the mesa projection has a superlattice structure comprising at least one groove at an interface between the mesa projection and the source electrode and between the mesa protrusion and the drain electrode, and wherein the source portion and the drain portion are received in the trench.

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Номер записи: 49
14-10-2014 дата публикации

Nitride semiconductor device and manufacturing method thereof

Номер: US8860087B2
Автор: Ki Yeol Park, Seok Yoon HONG, Woo Chul Jeon, Young Hwan Park
Принадлежит: Samsung Electro Mechanics Co Ltd

The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

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Номер записи: 50
17-03-2011 дата публикации

垂直構造ｌｅｄ素子及びその製造方法

Номер: JP2011055010A
Автор: Ki Yeol Park, Myong Soo Cho, Pun Jae Choi, Sang Yeob Song, Si Hyuk Lee, ジェ チョイ、プン, スー チョ、ミョン, ヒュク リー、シ, ヨブ ソン、サン, ヨル パク、キ
Принадлежит: Samsung LED Co Ltd

【課題】本発明は垂直構造ＩＩＩ−Ｖ族化合物半導体ＬＥＤ素子及びその製造方法に関する。 【解決手段】本発明の垂直構造ＬＥＤ素子の製造方法は、成長用基板上に第１導電型ＩＩＩ−Ｖ族化合物半導体層、活性層及び第２導電型ＩＩＩ−Ｖ族化合物半導体層を順次に形成する段階と、上記第２導電型ＩＩＩ−Ｖ族化合物半導体層上に導電性基板を接合する段階と、上記ＩＩＩ−Ｖ族化合物半導体層から上記成長用基板を除去する段階と、上記成長用基板の除去により露出された面側の上記第１導電型ＩＩＩ−Ｖ族化合物半導体層に電極を形成する段階とを含む。上記導電性基板の接合段階は、金属接合層を接合界面に接触させた状態で上記接合界面にマイクロ波を印加して上記金属接合層を局部的に加熱する段階を含む。 【選択図】図７

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Номер записи: 51
14-02-2017 дата публикации

High electron mobility transistor

Номер: US09570597B2
Автор: Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Jong-Seob Kim, Ki-Yeol Park, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

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Номер записи: 52
04-10-2016 дата публикации

Method and apparatus for controlling a gate voltage in high electron mobility transistor

Номер: US09461637B2
Автор: Jae-joon Oh, Jai-Kwang Shin, Jong-Bong Ha, Joon-Yong Kim, Ki-Yeol Park, Sun-Kyu Hwang, Woo-Chul JEON, Young-Hwan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

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Номер записи: 53