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Применить Всего найдено 4. Отображено 4.
10-09-2002 дата публикации

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

Номер: US0006447604B1
Автор: Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, David M. Keogh, Xueping Xu, Barbara E. Landini, FLYNN JEFFREY S, BRANDES GEORGE R, VAUDO ROBERT P, KEOGH DAVID M, XU XUEPING, LANDINI BARBARA E, FLYNN JEFFREY S., BRANDES GEORGE R., VAUDO ROBERT P., KEOGH DAVID M., LANDINI BARBARA E.
Принадлежит: Advanced Technology Materials, Inc., ADVANCED TECH MATERIALS, ADVANCED TECHNOLOGY MATERIALS, INC.

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10 5 , nitrogen source material partial pressure in a range of from about 1 to about 10 3 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

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Номер записи: 1
03-03-2003 дата публикации

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga) N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

Номер: KR20030017575A
Автор: FLYNN JEFFREY S., BRANDES GEORGE R., VAUDO ROBERT P., KEOGH DAVID M., XU XUEPING, LANDINI BARBARA E.
Принадлежит:

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like. © KIPO & WIPO ...

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Номер записи: 2
03-07-2012 дата публикации

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

Номер: US0008212259B2
Автор: Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, David M. Keogh, Xueping Xu, Barbara E. Landini, FLYNN JEFFREY S, BRANDES GEORGE R, VAUDO ROBERT P, KEOGH DAVID M, XU XUEPING, LANDINI BARBARA E, FLYNN JEFFREY S., BRANDES GEORGE R., VAUDO ROBERT P., KEOGH DAVID M., LANDINI BARBARA E.
Принадлежит: Cree, Inc., FLYNN JEFFREY S, BRANDES GEORGE R, VAUDO ROBERT P, KEOGH DAVID M, XU XUEPING, LANDINI BARBARA E, CREE INC, FLYNN JEFFREY S., BRANDES GEORGE R., VAUDO ROBERT P., KEOGH DAVID M., LANDINI BARBARA E., CREE, INC.

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10 5 , nitrogen source material partial pressure in a range of from about 1 to about 10 3 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10 2 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

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Номер записи: 3
04-10-2007 дата публикации

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga) N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

Номер: KR1020070097594A
Автор: FLYNN JEFFREY S., BRANDES GEORGE R., VAUDO ROBERT P., KEOGH DAVID M., XU XUEPING, LANDINI BARBARA E.
Принадлежит:

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like. © KIPO & WIPO ...

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Номер записи: 4