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Применить Всего найдено 38. Отображено 38.
07-03-2017 дата публикации

High quality group-III metal nitride crystals, methods of making, and methods of use

Номер: US0009589792B2
Автор: Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Michael Krames, JIANG WENKAN, D'EVELYN MARK P, KAMBER DERRICK S, EHRENTRAUT DIRK, KRAMES MICHAEL, Jiang Wenkan, D'Evelyn Mark P., Kamber Derrick S., Ehrentraut Dirk, Krames Michael
Принадлежит: Soraa, Inc., SORAA INC, SORAA, INC.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

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Номер записи: 1
07-02-2017 дата публикации

Large area nitride crystal and method for making it

Номер: US0009564320B2
Автор: Mark P. D'Evelyn, James S. Speck, Derrick S. Kamber, Douglas W. Pocius, D'EVELYN MARK P, SPECK JAMES S, KAMBER DERRICK S, POCIUS DOUGLAS W, D'Evelyn Mark P., Speck James S., Kamber Derrick S., Pocius Douglas W.
Принадлежит: Soraa, Inc., SORAA INC, SORAA, INC.

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 2
16-05-2017 дата публикации

Large area seed crystal for ammonothermal crystal growth and method of making

Номер: US0009650723B1
Автор: Mark P. D'Evelyn, Wenkan Jiang, Derrick S. Kamber, Rajeev T. Pakalapati, Michael R. Krames, D'EVELYN MARK P, JIANG WENKAN, KAMBER DERRICK S, PAKALAPATI RAJEEV T, KRAMES MICHAEL R, D'Evelyn Mark P., Jiang Wenkan, Kamber Derrick S., Pakalapati Rajeev T., Krames Michael R.
Принадлежит: Soraa, Inc., SORAA INC, SORAA, INC.

Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.

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Номер записи: 3
25-05-2017 дата публикации

LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT

Номер: US20170145585A1
Автор: Mark P. D'Evelyn, James S. Speck, Derrick S. Kamber, Douglas W. Pocius, D'EVELYN MARK P, SPECK JAMES S, KAMBER DERRICK S, POCIUS DOUGLAS W, D'Evelyn Mark P., Speck James S., Kamber Derrick S., Pocius Douglas W.
Принадлежит:

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors. 1. A method for growth of a large-area merged crystal , the method comprising:depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature;{'sub': 1', '1', '1', '2', '2', '2', '1', '1', '1', '2', '2', '2, 'bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate, said first crystal having a first nominal crystallographic orientation (xyz), and said second crystal having a second nominal crystallographic orientation (xyz), said first nominal crystallographic orientation (xyz) and said second nominal crystallographic orientation (xyz) being identical; and'}laterally and vertically growing a crystalline composition over said tiled substrate using ammonothermal growth at a second temperature to form a merged crystal,wherein said first and second crystals define first and second domains in said merged crystal; [{'sub': 1', '1', '1', '1, 'zis a negative surface normal of the first nominal crystallographic orientation, and xand yare crystallographic vectors that are orthogonal to z;'}, {'sub': 2', '2', '2', '2, 'zis a negative surface normal of the second nominal crystallographic orientation, and xand yare crystallographic vectors that are orthogonal to z;'}, {'sub': 1', '2, 'a polar misorientation angle γ between zand zis greater than about 0.005 degrees and less than about 0.5 degrees;'}, {'sub': 1 ...

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Номер записи: 4
16-05-2013 дата публикации

Large area nitride crystal and method for making it

Номер: US20130119401A1
Автор: Derrick S. Kamber, Douglas W. Pocius, James S. Speck, Mark P. D'Evelyn
Принадлежит: Soraa Inc

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 5
26-09-2013 дата публикации

POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING

Номер: US20130251615A1
Автор: "DEvelyn Mark P.", Kamber Derrick S.
Принадлежит: Soraa, Inc.

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals. 1. A method of preparing a polycrystalline group III metal nitride material , comprising:providing a source material selected from a group III metal , a group III metal halide, or a combination thereof into a chamber, the source material comprising at least one metal selected from at least aluminum, gallium, and indium;providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the g source material;transferring a nitrogen-containing material into the chamber;heating the chamber to a determined temperature;pressurizing the chamber to a determined pressure;processing the nitrogen-containing material with the source material in the chamber; andforming a polycrystalline group III metal nitride material.2. The method of claim 1 , wherein the getter comprises at least one of an alkaline earth metal claim 1 , boron claim 1 , carbon claim 1 , scandium claim 1 , titanium claim 1 , vanadium claim 1 , chromium claim 1 , yttrium claim 1 , zirconium claim 1 , niobium claim 1 , a rare earth metal claim 1 , hafnium claim 1 , tantalum claim 1 , and tungsten claim 1 , a nitride of any of the foregoing claim 1 , an oxynitride of any of the foregoing claim 1 , an oxyhalide of any of the foregoing claim 1 , and a halide of any of the foregoing.3. The method of claim 1 , wherein the getter comprises at least one of boron claim 1 , carbon claim 1 , scandium claim 1 , yttrium claim 1 , and a rare earth metal.4. The method of claim 1 , wherein the getter is provided into a crucible within the chamber together with the source material.5. ...

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Номер записи: 6
05-12-2013 дата публикации

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES

Номер: US20130323490A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentraut Dirk, Kamber Derrick S.
Принадлежит:

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. 1. A gallium-containing nitride crystal , comprising:a crystalline substrate member having a length greater than about 5 millimeters;at least one large-area surface having a semipolar orientation, wherein the semipolar orientation is miscut from each of the m-plane orientation and the c-plane orientation by at least about 5 degrees; and{'sup': 16', '−3, 'an impurity concentration greater than about 10cmof at least one impurity selected from O, H, Li, Na, K, F, Cl, Br, I, Si, Ge, Cu, Mn, and Fe, wherein the at least one impurity has a distribution along a direction parallel at least one large-area surface of the crystal comprising at least 4 alternating bands of a higher impurity concentration and a lower impurity concentration of the at least one impurity, wherein the higher impurity concentration is between about 1.05 times higher than and about 40 times higher than the lower impurity concentration.'}2. The crystal of claim 1 , wherein the semipolar orientation is within about 3 degrees of one of {6 0 −6 ±1} claim 1 , {5 0 −5 ±1} claim 1 , {4 0 −4 ±1} claim 1 , {3 0 −3 ±1} claim 1 , {5 0 −5 ±2} claim 1 , {2 0 −2 ±1} claim 1 , {3 0 −3 ±2} claim 1 , {4 0 −4 ±3} claim 1 , and {5 0 −5 ±4}.3. The crystal of claim 1 , wherein the length is greater than about 25 millimeters.4. The crystal of claim 1 , wherein a dislocation density of at least one large-area surface is below about 10cm.5. The crystal of claim 1 , wherein a full width at half maximum of a symmetric x-ray rocking curve corresponding ...

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Номер записи: 7
26-12-2013 дата публикации

USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

Номер: US20130340672A1
Автор: Kamber Derrick S., Nakamura Shuji, Pimputkar Siddha, Speck James S.
Принадлежит: The Regents of the University of California

Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid. 1. An apparatus for growing (Al ,Ga ,In)N crystals , comprising:(a) a vessel for containing (Al,Ga,In)N source materials and (Al,Ga,In)N seed crystals;(b) wherein the vessel is filled with a solvent for dissolving the (Al,Ga,In)N source materials and the dissolved (Al,Ga,In)N source materials are transported to the (Al,Ga,In)N seed crystals for ammonothermal growth of the (Al,Ga,In)N crystals; and{'sub': 3', '2', '6', '6', '3', '3', '6', '4, "(c) wherein boron-containing material is placed into the vessel's environment for use as impurity getters during the ammonothermal growth of the (Al,Ga,In)N crystals, and the boron-containing material includes one or more of borane (BH), diborane (BH), borazane (BNH), borazine (BNH), sodium borohydride (NaBH), and boron in its elemental form."}2. The apparatus of claim 1 , wherein the solvent comprises a nitrogen-containing solvent.3. The apparatus of claim 1 , wherein the impurity getters remove one or more impurities that include oxygen claim 1 , oxygen-containing compounds claim 1 , water or other materials in the vessel.4. The apparatus of claim 1 , wherein the boron-containing material is used to modify or enhance solubility of the (Al claim 1 ,Ga claim 1 ,In)N source materials or (Al claim 1 ,Ga claim 1 ,In)N seed crystals into the solvent.5. The apparatus of claim 1 , wherein the solvent is entirely or partially in a supercritical state. This application is a divisional under 35 U.S.C. Section 121 of co-pending and commonly-assigned U.S. Utility patent application Ser. No. 13/128,092, filed on May 6, 2011, by Siddha Pimputkar, Derrick S. Kamber, James S. Speck ...

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Номер записи: 8
03-01-2019 дата публикации

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES

Номер: US20190003078A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentraut Dirk, Kamber Derrick S.
Принадлежит:

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. 1. A method of forming a boule used to form one or more single crystal substrates , comprising performing a crystal growth process on one or more seed crystals to form one or more boules , whereinthe one or more seed crystals each have a first crystallographic orientation on a first surface, formed on the first surface of or within each of the one or more seed crystals; or', 'formed between two or more tiled crystals that form a mosaic of tiled crystals,, 'the first surface of each of the one or more seed crystals includes parallel features that aregrowth facets form during the crystal growth process between the parallel features having a second crystallographic orientation and a third crystallographic orientation, andwherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation.1. The method of claim 1 , wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing claim 1 , dry etching claim 1 , reactive ion etching claim 1 , wet etching claim 1 , laser scribing claim 1 , or grinding.2. The method of claim 2 , wherein the grooves have a depth between about one micrometer and about one millimeter and a width between about ten micrometers and about one millimeter.4. The method of claim 1 , wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals claim 1 , ...

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Номер записи: 9
29-05-2014 дата публикации

HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AND METHODS OF USE

Номер: US20140147650A1
Автор: "DEvelyn Mark P.", Ehrentraut Dirk, JIANG Wenkan, Kamber Derrick S., KRAMES Michael
Принадлежит: Soraa, Inc.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices. 1. An ammonothermal group III metal nitride crystal , wherein ,the crystal is characterized by a wurtzite crystal structure;the crystal comprises a first large area surface having a maximum dimension greater than about 10 millimeters; andthe first large-area surface comprises a pattern of locally-approximately-linear arrays of threading dislocations.2. The crystal of claim 1 , wherein the crystal comprises:a group III metal selected from gallium, aluminum, indium, and a combination of any of the foregoing; and nitrogen.3. The crystal of claim 1 , wherein the first large-area surface is characterized by claim 1 ,a symmetric x-ray rocking curve full width at half maximum less than about 200 arcsec;{'sup': 17', '−3, 'an impurity concentration of H greater than about 10cm; and'}{'sup': 15', '−3, 'an impurity concentration greater than about 10cmof at least one of Li, Na, K, F, Cl, Br, and I, as quantified by calibrated secondary ion mass spectrometry.'}4. The crystal of claim 1 , wherein claim 1 ,{'sup': −1', '5', '−1, 'the threading dislocations within the locally-approximately linear arrays comprise a concentration between about 5 cmand about 10cm; and'} at least one pitch dimension between about 5 micrometers and about 20 millimeters; and', {'sup': 5', '−2', '3', '−1, 'regions between the locally-approximately-linear arrays of threading dislocations characterized by a threading dislocation density below about 10cmand a stacking-fault concentration below about 10cm ...

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Номер записи: 10
19-03-2020 дата публикации

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

Номер: US20200087813A1
Автор: "DEvelyn Mark P.", Kamber Derrick S., POCIUS DOUGLAS W., Speck James S.
Принадлежит:

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors. 1depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature;{'sub': 1', '1', '1', '2', '2', '2', '1', '1', '1', '2', '2', '2, 'bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate, said first crystal having a first nominal crystallographic orientation (xyz), and said second crystal having a second nominal crystallographic orientation (xyz), said first nominal crystallographic orientation (xyz) and said second nominal crystallographic orientation (xyz) being identical; and'}laterally and vertically growing a crystalline composition over said tiled substrate using ammonothermal growth at a second temperature to form a merged crystal, wherein said first and second crystals define first and second domains in said merged crystal; [{'sub': 1', '1', '1', '1, 'zis a negative surface normal of the first nominal crystallographic orientation, and xand yare crystallographic vectors that are orthogonal to z;'}, {'sub': 2', '2', '2', '2, 'zis a negative surface normal of the second nominal crystallographic orientation, and xand yare crystallographic vectors that are orthogonal to z;'}, {'sub': 1', '2, 'a polar misorientation angle γ between zand zis greater than about 0.005 degrees and less than about 0.5 degrees;'}, {'sub': 1', '2, 'a misorientation angle α between xand xis greater than about 0.01 ...

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Номер записи: 11
14-05-2015 дата публикации

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES

Номер: US20150132926A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentraut Dirk, Kamber Derrick S.
Принадлежит:

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. 1. A method for growth of an m-plane gallium-containing nitride crystal , the method comprising:providing a gallium-containing source material;providing a mineralizer;providing at least two gallium-containing nitride seed plates, each of the at least two gallium-containing nitride seed plates comprising a first large-area surface and a second large-area surface opposite the first large-area surface, wherein,each of the first large-area surfaces and each of the second large-area surfaces are characterized by a minimum lateral dimension of at least about one centimeter;the first large-area surface of the first gallium-containing nitride seed plate comprises an outward facing growth surface characterized by a first crystallographic orientation;the first large-area surface of the second gallium-containing nitride seed plate comprises an outward facing growth surface characterized by a second crystallographic orientation;the first crystallographic orientation and the second crystallographic orientation differ by at least about 0.1 degree and less than about 5 degrees; andthe first crystallographic orientation and the second crystallographic orientation are characterized by a nominally m-plane crystallographic orientation with a miscut angle in the c-direction between about 5 degrees and about 0.05 degrees toward [000−1] and a miscut angle in the a-direction less than or equal to about 1 degree;supporting the at ...

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Номер записи: 12
30-05-2019 дата публикации

METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE

Номер: US20190161858A9
Автор: "DEvelyn Mark P.", COOK Jonathan D., Kamber Derrick S., POCIUS DOUGLAS W.
Принадлежит:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously. 1. A plurality of polycrystalline group III nitride chunks , whereineach of the plurality of polycrystalline group III nitride chunks comprises at least one smooth surface, and whereinthe at least one smooth surface is curved by a maximum radius of curvature of 100 meters and by a minimum radius of curvature of 1 millimeter,the at least one smooth surface has a root-mean-square roughness between 0.001 millimeter and 1 millimeter,the maximum value of the minimum radius of curvature is at least 2% more than the minimum value of the minimum radius of curvature, andthe maximum value of the maximum radius of curvature is at least 25% more than the minimum value of the maximum radius of curvature.2. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein each of the plurality of polycrystalline group III nitride chunks is essentially free of through-pores.3. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein the minimum radius of curvature is between 1 millimeter and 5 meters.4. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein the smooth surface of a first chunk of the plurality of polycrystalline group III ...

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Номер записи: 13
04-08-2016 дата публикации

METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE

Номер: US20160222506A1
Автор: "DEvelyn Mark P.", COOK Jonathan D., Kamber Derrick S., POCIUS DOUGLAS W.
Принадлежит:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously. 1. A process of preparing polycrystalline group III nitride chunks comprising the steps of:placing a group III metal inside a source chamber;flowing a halogen-containing gas over the group III metal to form a group III metal halide;contacting said group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, said foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re;forming a polycrystalline group III nitride layer on said foil within said deposition chamber;removing said polycrystalline group III nitride layer from said foil; andcomminuting said polycrystalline group III nitride layer to form said polycrystalline group III nitride chunks, wherein said removing and said comminuting are performed in any order or simultaneously.2. The process of claim 1 , wherein said foil comprises at least one of Mo or W.3. Polycrystalline group III nitride chunks obtainable by the process of .4. Polycrystalline group III nitride chunks of claim 3 , wherein each of said polycrystalline group III nitride chunks has at least one smooth surface formed along said foil claim 3 , and wherein said foil is curved such that said smooth surface has a maximum radius of ...

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Номер записи: 14
12-08-2021 дата публикации

IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

Номер: US20210249252A1
Автор: "DEvelyn Mark P.", COOK Jonathan D., Ehrentraut Dirk, JIANG Wenkan, Kamber Derrick S., WENGER James
Принадлежит:

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others. 1. A free-standing crystal , comprising a group Ill metal and nitrogen , wherein the free-standing crystal comprises:a wurtzite crystal structure;a first surface having a maximum dimension greater than 40 millimeters in a first direction;{'sup': 3', '−1, 'an average concentration of stacking faults below 10cm,'}{'sup': 1', '−2', '6', '−2, 'an average concentration of threading dislocations between 10cmand 10cm, wherein the average concentration of threading dislocations on the first surface varies periodically by at least a factor of two in the first direction, the period of the variation in the first direction being between 5 micrometers and 20 millimeters; and'}a miscut angle that varies by 0.1 degree or less in the central 80% of the first surface of the crystal along the first direction and by 0.1 degree or less in the central 80% of the first surface of the crystal along a second direction orthogonal to the first direction, [{'sup': −1', '5', '−1, 'the first surface comprises a plurality of first regions, each of the plurality of first regions having a locally-approximately-linear array of threading dislocations with a concentration between 5 cmand 10cm, the first surface ...

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Номер записи: 15
16-07-2020 дата публикации

HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, METHODS OF MAKING, AND METHODS OF USE

Номер: US20200224331A1
Автор: "DEvelyn Mark P.", Kamber Derrick S.
Принадлежит:

A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon. 1. A method for forming a group III metal nitride crystal , comprising:{'sub': 2', '4', '2', '4', '4', '2', '4', 'a5', '8', '2', '4', '2', '4', '2', '4', '2', '2', 'a8', 'a2', '4', '6', '2, 'forming a pattern on a substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, wherein the substrate comprises one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAlOspinel, ZnO, ZrB, BP, InP, AlON, ScAlMgO, YFeZnO, MgO, FeNiO, LiGO, NaMoO, NaWO, InCdO, lithium aluminate (LiAlO), LiGaO, CL(PO)O, gallium nitride (GaN), or aluminum nitride (AlN);'}growing a group III metal nitride layer from the pattern of growth centers vertically and laterally, wherein a laterally-grown group III metal nitride layer coalesces in a region disposed between adjacent growth centers, and ...

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Номер записи: 16
10-09-2020 дата публикации

METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE

Номер: US20200283892A1
Автор: "DEvelyn Mark P.", COOK Jonathan D., Kamber Derrick S., POCIUS DOUGLAS W.
Принадлежит:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously. 1. A reactor for synthesis of a group III metal nitride material , comprising:an outer enclosure;at least one source chamber within the outer enclosure, the source chamber being configured to contain a molten group III metal;at least one deposition chamber within the outer enclosure and coupled to the at least one source chamber by at least one first non-leak-tight joint;at least one first inlet line for a halogen-containing gas coupled to the at least one source chamber by at least one second non-leak-tight joint;at least one second inlet line for an ammonia-containing gas coupled to the at least one deposition chamber by at least one third non-leak-tight joint; andat least one third inlet line that is in fluid communication with a first space formed inside the outer enclosure and outside of the at least one source chamber and of the at least one deposition chamber, wherein a gas flowing from the at least one third inlet line and through the first space is configured to entrain gases leaking from the at least one first non-leak-tight joint, the at least one second non-leak-tight joint, and the at least one third non-leak-tight joint.2. The reactor of claim 1 , wherein at least one of ...

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Номер записи: 17
27-12-2018 дата публикации

METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE

Номер: US20180371609A1
Автор: "DEvelyn Mark P.", COOK Jonathan D., Kamber Derrick S., POCIUS DOUGLAS W.
Принадлежит:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously. 1. A plurality of polycrystalline group III nitride chunks , whereineach of the plurality of polycrystalline group III nitride chunks comprises at least one smooth surface, and whereinthe at least one smooth surface is curved by a maximum radius of curvature of 100 meters and by a minimum radius of curvature of 1 millimeter,the at least one smooth surface has a root-mean-square roughness between 0.001 millimeter and 1 millimeter,the maximum value of the minimum radius of curvature is at least 2% more than the minimum value of the minimum radius of curvature, andthe maximum value of the maximum radius of curvature is at least 25% more than the minimum value of the maximum radius of curvature.2. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein each of the plurality of polycrystalline group III nitride chunks is essentially free of through-pores.3. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein the minimum radius of curvature is between 1 millimeter and 5 meters.4. The plurality of polycrystalline group III nitride chunks of claim 1 , wherein the smooth surface of a first chunk of the plurality of polycrystalline group III ...

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Номер записи: 18
31-07-2018 дата публикации

Process for large-scale ammonothermal manufacturing of gallium nitride boules

Номер: US10036099B2
Автор: Bradley C. Downey, Derrick S. Kamber, Dirk Ehrentraut, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

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Номер записи: 19
12-07-2011 дата публикации

Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture

Номер: US7976630B2
Автор: Christiane Poblenz, Derrick S. Kamber, James S. Speck
Принадлежит: Soraa Inc

A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

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Номер записи: 20
24-03-2015 дата публикации

Polycrystalline group III metal nitride with getter and method of making

Номер: US8987156B2
Автор: Derrick S. Kamber, Mark P. D'Evelyn
Принадлежит: Soraa Inc

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

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Номер записи: 21
06-11-2018 дата публикации

Polycrystalline group III metal nitride with getter and method of making

Номер: USRE47114E1
Автор: Derrick S. Kamber, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

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Номер записи: 22
24-07-2018 дата публикации

Capsule for high pressure, high temperature processing of materials and methods of use

Номер: US10029955B1
Автор: Derrick S. Kamber, Douglas Wayne Pocius, Michael Coulter, Pakalapati Tirumala Rajeev
Принадлежит: SLT Technologies Inc

An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500° C., respectively.

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Номер записи: 23
04-12-2018 дата публикации

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Номер: US10145026B2
Автор: Bradley C. Downey, Derrick S. Kamber, Dirk Ehrentraut, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

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Номер записи: 24
11-10-2022 дата публикации

Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate

Номер: US11466384B2
Автор: Derrick S. Kamber, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

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Номер записи: 25
27-09-2022 дата публикации

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

Номер: US11453956B2
Автор: Derrick S. Kamber, Douglas W. Pocius, James S. Speck, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 26
09-10-2018 дата публикации

Method and system for preparing polycrystalline group III metal nitride

Номер: US10094017B2
Автор: Derrick S. Kamber, Douglas W. Pocius, Jonathan D. Cook, Mark P. D'Evelyn
Принадлежит: SLT Technologies Inc

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

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Номер записи: 27
18-06-2013 дата публикации

Ammonothermal method for growth of bulk gallium nitride

Номер: US8465588B2
Автор: Christiane Poblenz, Derrick S. Kamber, James S. Speck
Принадлежит: Soraa Inc

A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

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Номер записи: 28
06-05-2010 дата публикации

Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same

Номер: US20100111808A1
Автор: Derrick S. Kamber, James S. Speck, Makoto Saito, Shuji Nakamura, Siddha Pimputkar, Steven P. DenBaars
Принадлежит: UNIVERSITY OF CALIFORNIA

The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.

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Номер записи: 29
14-05-2010 дата публикации

Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals

Номер: WO2010053996A1
Автор: Derrick S. Kamber, James S. Speck, Shuji Nakamura, Siddha Pimputkar
Принадлежит: The Regents of the University of California

A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen- containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side.

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Номер записи: 30
21-12-2022 дата публикации

Improved group iii nitride substrate, method of making, and method of use

Номер: EP4104201A1
Автор: Derrick S. Kamber, Dirk Ehrentraut, James Wenger, Jonathan D. Cook, Mark P. D'Evelyn, Wenkan Jiang
Принадлежит: SLT Technologies Inc

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-ill metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AIN, InN, InGaN, AIGaN, and AllnGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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Номер записи: 31
14-05-2010 дата публикации

Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same

Номер: WO2010053977A1
Автор: Derrick S. Kamber, James S. Speck, Makoto Saito, Shuji Nakamura, Siddha Pimputkar, Steven P. DenBaars
Принадлежит: The Regents of the University of California

The present invention provides a method for growing group Ill-nitride crystals wherein the group Ill-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group Ill-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.

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Номер записи: 32
03-09-2019 дата публикации

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

Номер: US10400352B2
Автор: Derrick S. Kamber, Douglas W. Pocius, James S. Speck, Mark P. D'Evelyn
Принадлежит: Soraa Inc

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 33
18-07-2023 дата публикации

Group III nitride substrate, method of making, and method of use

Номер: US11705322B2
Автор: Derrick S. Kamber, Dirk Ehrentraut, James Wenger, Jonathan D. Cook, Mark P. D'Evelyn, Wenkan Jiang
Принадлежит: SLT Technologies Inc

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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Номер записи: 34
03-07-2008 дата публикации

Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy

Номер: WO2008057454A3
Автор: Derrick S Kamber, James S Speck, Shuji Nakamura
Принадлежит: Derrick S Kamber, James S Speck, Janpan Science And Technology, Shuji Nakamura, Univ California

A Group Ill-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group Ill-nitride semiconductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group Ill-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group Ill-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 °C, the Group Ill-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 107 cm-2.

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Номер записи: 35
25-09-2008 дата публикации

Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy

Номер: WO2008057454A8
Автор: Derrick S Kamber, James S Speck, Shuji Nakamura
Принадлежит: Derrick S Kamber, James S Speck, Japan Science & Tech Agency, Shuji Nakamura, Univ California

A Group Ill-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group Ill-nitride semiconductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group Ill-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group Ill-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 °C, the Group Ill-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 107 cm-2.

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Номер записи: 36
05-10-2023 дата публикации

Group iii nitride substrate, method of making, and method of use

Номер: US20230317444A1
Автор: Derrick S. Kamber, Dirk Ehrentraut, James Wenger, Jonathan D. Cook, Mark P. D'Evelyn, Wenkan Jiang
Принадлежит: SLT Technologies Inc

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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Номер записи: 37
17-01-2008 дата публикации

Methods and materials for growing iii-nitride semiconductor compounds containing aluminum

Номер: WO2007133512A3
Автор: Benjamin A Haskell, Derrick S Kamber, Shuji Nakamura, Tadao Hashimoto
Принадлежит: Benjamin A Haskell, Derrick S Kamber, Shuji Nakamura, Tadao Hashimoto, Univ California

A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and- growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.

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Номер записи: 38