Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

27-09-2022 дата публикации

Номер:

US0011453956B2

Автор: Mark P. D'Evelyn, James S. Speck, Derrick S. Kamber, Douglas W. Pocius

Принадлежит: SLT TECHNOLOGIES, INC.

Контакты:

Номер заявки: 47-09-1655

Дата заявки: 26-08-2019

CPC - классификация

C C3 C30 C30B C30B1 C30B19 C30B19/C30B19/0 C30B19/06 C30B19/068 C30B19/1 C30B19/12 C30B2 C30B25 C30B25/C30B25/0 C30B25/02 C30B25/1 C30B25/18 C30B29 C30B29/C30B29/4 C30B29/40 C30B29/403 C30B29/406 C30B3 C30B33 C30B33/C30B33/0 C30B33/06 C30B7 C30B7/C30B7/1 C30B7/10 C30B7/105 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/025 H01L21/0254 H01L21/026 H01L21/0260 H01L21/02609 H01L29 H01L29/H01L29/2 H01L29/20 H01L29/200 H01L29/2003

IPC - классификация

C C3 C30 C30B C30B1 C30B19 C30B19/C30B19/0 C30B19/06 C30B19/1 C30B19/12 C30B2 C30B25 C30B25/C30B25/0 C30B25/02 C30B25/1 C30B25/18 C30B29 C30B29/C30B29/4 C30B29/40 C30B29/403 C30B3 C30B33 C30B33/C30B33/0 C30B33/06 C30B7 C30B7/C30B7/1 C30B7/10 C30B9 C30B9/C30B9/1 C30B9/10 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L29 H01L29/H01L29/2 H01L29/20

Цитирование НПИ

117/1
117/101
117/84
117/915
257/79
427/523
430/22
438/455
438/458
438/458
438/775
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