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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 19942. Отображено 100.
16-07-1996 дата публикации

УСТРОЙСТВО ДЛЯ ВВОДА ГАЗОВ В КАМЕРУ ОСАЖДЕНИЯ

Номер: RU0000002389U1
Автор: Бараков Б.Н., Никулин А.И.
Принадлежит: Горно-химический комбинат

Устройство ввода газов в камеру осаждения, содержащее осевой патрубок для ввода парогазовой смеси, снабженный насадкой, отличающееся тем, что внутреннее отверстие осевого патрубка и верхняя часть насадки выполнены в виде концентрично расположенных сопел Лаваля, при этом насадка установлена на осевом патрубке с зазором. (19) RU (11) (13) 2 389 U1 (51) МПК C30B 25/14 (1995.01) РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К СВИДЕТЕЛЬСТВУ (21), (22) Заявка: 94039626/20, 20.10.1994 (46) Опубликовано: 16.07.1996 (71) Заявитель(и): Горно-химический комбинат (72) Автор(ы): Бараков Б.Н., Никулин А.И. R U (73) Патентообладатель(и): Горно-химический комбинат (54) УСТРОЙСТВО ДЛЯ ВВОДА ГАЗОВ В КАМЕРУ ОСАЖДЕНИЯ U 1 2 3 8 9 R U U 1 Ñòðàíèöà: 1 2 3 8 9 (57) Формула полезной модели Устройство ввода газов в камеру осаждения, содержащее осевой патрубок для ввода парогазовой смеси, снабженный насадкой, отличающееся тем, что внутреннее отверстие осевого патрубка и верхняя часть насадки выполнены в виде концентрично расположенных сопел Лаваля, при этом насадка установлена на осевом патрубке с зазором. RU 2 389 U1 RU 2 389 U1 RU 2 389 U1 RU 2 389 U1 RU 2 389 U1 RU 2 389 U1 RU 2 389 U1

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Номер записи: 1
05-01-2012 дата публикации

Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light

Номер: US20120001302A1
Автор: Hisashi Matsumura, Kazuyoshi Itoh, Shunro Fuke, Yasuo Kanematsu
Принадлежит: Osaka University NUC

An apparatus ( 100 ) for fabricating a semiconductor thin film includes: substrate surface pretreatment means ( 101 ) for pretreating a surface of a substrate; organic layer coating means ( 102 ) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means ( 103 ) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means ( 104 ) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means ( 105 ) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means ( 106 ) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

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Номер записи: 2
05-01-2012 дата публикации

Vapor-phase process apparatus, vapor-phase process method, and substrate

Номер: US20120003142A1
Автор: Eiryo Takasuka, Masaki Ueno, Toshio Ueda, Toshiyuki Kuramoto
Принадлежит: Sumitomo Electric Industries Ltd

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

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Номер записи: 3
10-09-2006 дата публикации

УСТРОЙСТВО ДЛЯ ПОДАЧИ ПАРОВ ХЛОРИДА ГАЛЛИЯ ПРИ ГАЗОФАЗНОМ ОСАЖДЕНИИ СОЕДИНЕНИЙ AB

Номер: RU0000056402U1
Автор: Гришнова Наталья Дмитриевна, Иванов Валерий Александрович, Котков Анатолий Павлович, Орловский Леонид Александрович, Салганский Юрий Михайлович, Сидоров Виктор Андреевич
Принадлежит: ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "НИГАЛ"

Устройство для подачи паров хлорида галлия при газофазном осаждении соединений АB, содержащее две соединенные между собой емкости, одна из которых предназначена для хранения хлорида галлия, а другая - для дозирования паров хлорида галлия в зону осаждения потоком газа-носителя, отличающееся тем, что устройство содержит термостат, в котором размещены упомянутые емкости, при этом емкость для дозирования жестко закреплена в нем, а емкость для хранения закреплена с возможностью перемещения в вертикальном направлении относительно емкости для дозирования, емкости содержат верхний и боковой патрубки для ввода и вывода газа-носителя соответственно, при этом боковой патрубок емкости для хранения соединен с верхним патрубком емкости для дозирования, и нижние патрубки для перемещения жидкого хлорида галлия из емкости в емкость, соединенные между собой, при этом все соединения выполнены гибкими трубопроводами, а термостат при этом размещен на пьедестале с возможностью поворота на 90 градусов вокруг горизонтальной оси, совпадающей с осью входного патрубка емкости хранения и выходного патрубка емкости дозирования. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 56 402 (13) U1 (51) МПК C30B 25/14 C30B 29/38 C30B 29/40 (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2006109816/22 , 29.03.2006 (24) Дата начала отсчета срока действия патента: 29.03.2006 (45) Опубликовано: 10.09.2006 (73) Патентообладатель(и): ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "НИГАЛ" (RU) Ñòðàíèöà: 1 U 1 5 6 4 0 2 U 1 Формула полезной модели Устройство для подачи паров хлорида галлия при газофазном осаждении соединений А 3B 5, содержащее две соединенные между собой емкости, одна из которых предназначена для хранения хлорида галлия, а другая - для дозирования паров хлорида галлия в зону осаждения потоком газа-носителя, отличающееся тем, что устройство содержит термостат, в котором размещены упомянутые ...

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Номер записи: 4
05-01-2012 дата публикации

Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material

Номер: US20120003819A1
Автор: Alexander Reznicek, Devendra K. Sadana, He Hong, Paul David Brabant, Robert Torres, Jr., Satoshi Hasaka, Terry Arthur Francis, Thomas N. Adam
Принадлежит: International Business Machines Corp, Matheson Tri-Gas Inc

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

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Номер записи: 5
09-02-2012 дата публикации

Diamond semiconductor element and process for producing the same

Номер: US20120034737A1
Автор: Kenji Ueda, Makoto Kasu, Toshiki Makimoto, Yoshiharu Yamauchi
Принадлежит: Nippon Telegraph and Telephone Corp

A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

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Номер записи: 6
08-03-2012 дата публикации

Control of Strain Through Thickness in Epitaxial Films Via Vertical Nanocomposite Heteroepitaxy

Номер: US20120058323A1
Автор: Judith L. Driscoll, Patrick Zerrer, Quanxi Jia
Принадлежит: Los Alamos National Security LLC

A two-dimensional vertical heteroepitaxial strain controlled composite is grown. The strain-controlling phase can be benign in all other respects so that the functional properties of the parent phase are unchanged, improved/enhanced, and/or manipulated. The new composite is advantageous because there is no need for expensive specialized crystals and because there are no thickness limitations.

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Номер записи: 7
22-03-2012 дата публикации

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

Номер: US20120070929A1
Автор: Hideaki Nakahata, Katsushi Akita, Kensaku Motoki, Shin Hashimoto, Shinsuke Fujiwara
Принадлежит: Koha Co Ltd, Sumitomo Electric Industries Ltd

Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S 105 , a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11 a of a gallium oxide substrate 11 . After the growth of the buffer layer 13 , while supplying a gas G 2 , which contains hydrogen and nitrogen, into a growth reactor 10 , the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

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Номер записи: 8
29-03-2012 дата публикации

Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

Номер: US20120074404A1
Автор: Kazuhiro Ushita
Принадлежит: Bridgestone Corp

Provided is a supporting substrate ( 30 ) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate ( 10 ) composed of a silicon carbide polycrystalline body, and a coat layer ( 20 ) deposited on the silicon carbide polycrystalline substrate ( 10 ). The coat layer ( 20 ) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface ( 22 ) of the coat layer ( 20 ) in contact with the single crystalline wafer is 1 nm or less.

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Номер записи: 9
03-05-2012 дата публикации

Group iii nitride semiconductor element and epitaxial wafer

Номер: US20120104433A1
Автор: Fumitake Nakanishi, Masaki Ueno, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

A primary surface 23 a of a supporting base 23 of a light-emitting diode 21 a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25 a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane S R3 shown in FIG. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33 a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in FIG. 5 ) and the (0001) plane of a well layer 37 a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

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Номер записи: 10
03-05-2012 дата публикации

Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device

Номер: US20120104558A1
Автор: Keiji Ishibashi
Принадлежит: Sumitomo Electric Industries Ltd

In a semiconductor device 100 , it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×10 10 pieces/cm 2 to 2000×10 10 pieces/cm 2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 . By thus preventing C from piling up, a high-resistivity layer is prevented from being formed on the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 . Accordingly, it is possible to reduce electrical resistance at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 , and improve the crystal quality of the epitaxial layer 22 . Consequently, it is possible to improve the emission intensity and yield of the semiconductor device 100.

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Номер записи: 11
10-05-2012 дата публикации

Generating and detecting radiation

Номер: US20120113417A1
Автор: Alexander Giles Davies, Christopher Wood, David Graham Moodie, Edmund Linfield, John Cunningham, Michael James Robertson, Paul John Cannard, Xin Chen
Принадлежит: Individual

A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

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Номер записи: 12
10-05-2012 дата публикации

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes

Номер: US20120114545A1
Автор: Mark Loboda, Seung Ho Park, Victor Torres
Принадлежит: Dow Corning Corp

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

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Номер записи: 13
10-05-2012 дата публикации

Method of sige epitaxy with high germanium concentration

Номер: US20120115310A1
Автор: WEI Ji, Yan Miu
Принадлежит: Individual

The present invention discloses a method of SiGe epitaxy with high germanium concentration, a germanium concentration can be increased by reducing the percentage of silane and germane during introduction silane and germane. With the same flow of germanium source, the germanium concentration is significantly increased as the germane flow is reduced, therefore a defect-free SiGe epitaxial film with a germanium atomic percentage of 25˜35% can be obtained. The present invention can balance epitaxial growth rate and germanium doping concentration by using existing equipments to obtain a high germanium concentration, and the epitaxial growth rate is only reduced a little, which can keep the SiGe epitaxial layer having no defect to meet the requirements of devices and can maintain sufficient throughput.

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Номер записи: 14
31-05-2012 дата публикации

Graphene Production Using Laser Heated Crystal Growth

Номер: US20120132353A1
Автор: James Pierre Hauck
Принадлежит: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Implementations and techniques for producing graphene are generally disclosed.

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Номер записи: 15
07-06-2012 дата публикации

High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith

Номер: US20120138952A1
Автор: Nikolaus Dietz
Принадлежит: Georgia State University Research Foundation Inc

A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

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Номер записи: 16
28-06-2012 дата публикации

Epitaxial substrate and method for manufacturing epitaxial substrate

Номер: US20120161152A1
Автор: Makoto Miyoshi, Mikiya Ichimura, Mitsuhiro Tanaka, Shigeaki Sumiya, Sota Maehara
Принадлежит: NGK Insulators Ltd

Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

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Номер записи: 17
05-07-2012 дата публикации

Halogen assisted physical vapor transport method for silicon carbide growth

Номер: US20120167825A1
Автор: Hudson M. Hobgood, Stephan G. Mueller, Valeri F. Tsvetkov
Принадлежит: Individual

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

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Номер записи: 18
19-07-2012 дата публикации

Methods for epitaxial silicon growth

Номер: US20120180716A1
Автор: Er-Xuan Ping, Jingyan Zhang
Принадлежит: Micron Technology Inc

Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

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Номер записи: 19
26-07-2012 дата публикации

Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations

Номер: US20120189527A1
Автор: Puneet Gupta, Satish Bhusarapu, Yue Huang
Принадлежит: SunEdison Inc

Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

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Номер записи: 20
23-08-2012 дата публикации

Low-temperature selective epitaxial growth of silicon for device integration

Номер: US20120210932A1
Автор: Alexander Reznicek, Ali Khakifirooz, Bahman Hekmatshoar-Tabari, Davood Shahrjerdi, Devendra K. Sadana, Ghavam G. Shahidi
Принадлежит: International Business Machines Corp

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

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Номер записи: 21
25-10-2012 дата публикации

Reaction system for growing a thin film

Номер: US20120266821A1
Автор: Carl White, Darko Babic, Eric Shero, Herbert Terhorst, Kyle Fondurulia, Marko Peussa, Min Yan, Mohith Verghese
Принадлежит: ASM America Inc

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

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Номер записи: 22
22-11-2012 дата публикации

Methods For Monitoring Growth Of Semiconductor Layers

Номер: US20120293813A1
Автор: Eric M. Rehder, Matthew Youngers, Peter Rice
Принадлежит: Kopin Corp

Deposition of a thin film is monitored by illuminating the thin film with an incident beam during deposition of the thin film, wherein at least a portion of the incident beam reflects off the thin film to yield a reflected beam; measuring intensity of the reflected beam from the thin film during growth of the thin film to obtain reflectance; and curve-fitting at least part of an oscillation represented by the reflectance data to obtain information about at least one of thickness, growth rate, composition, and doping of the thin film.

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Номер записи: 23
20-12-2012 дата публикации

Chemical vapor deposition apparatus

Номер: US20120322168A1
Автор: Evgeny Vladimirovich Yakovlev, Heng Liu
Принадлежит: Individual

System and method for forming one or more materials. The system includes a susceptor component configured to rotate around a central axis, and a showerhead component that is located above the susceptor component and not in direct contact with the susceptor component. Additionally, the system includes one or more substrate holders located on the susceptor component and configured to rotate around the central axis and also rotate around corresponding holder axes respectively, and a central component. Moreover, the system includes one or more first inlets formed within the central component, one or more second inlets, and one or more third inlets formed within the showerhead component and located farther away from the central component than the one or more second inlets.

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Номер записи: 24
03-01-2013 дата публикации

Device and method for producing bulk single crystals

Номер: US20130000552A1
Автор: Jason SCHMITT
Принадлежит: NITRIDE SOLUTIONS Inc

The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.

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Номер записи: 25
10-01-2013 дата публикации

Methods for depositing thin films comprising gallium nitride by atomic layer deposition

Номер: US20130012003A1
Автор: Antti Niskanen, Suvi Haukka, Viljami J. Pore
Принадлежит: Individual

Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.

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Номер записи: 26
24-01-2013 дата публикации

Use of freestanding nitride veneers in semiconductor devices

Номер: US20130019927A1
Автор: Richard L. Ross, Scott M. Zimmerman, William R. Livesay
Принадлежит: Individual

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

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Номер записи: 27
21-02-2013 дата публикации

Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template

Номер: US20130043442A1
Автор: Hajime Fujikura, Michiko Matsuda, Taichiroo Konno
Принадлежит: Hitachi Cable Ltd

A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

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Номер записи: 28
28-02-2013 дата публикации

Vapor growth apparatus and vapor growth method

Номер: US20130047916A1
Автор: Michio Nishibayashi, Takumi Yamada, Yuusuke Sato
Принадлежит: Nuflare Technology Inc

A vapor growth apparatus including: a reaction chamber configured to lod a wafer; a gas supply mechanism which supplies process gas into the reaction chamber; a support unit for placing the wafer; a heater for heating the wafer from below; a rotation control unit for rotating the wafer; a gas exhaust mechanism including an exhaust port which exhausts gas from the reaction chamber; a reflector provided below the heater for reflecting heat from the heater onto a rear face of the wafer; and a vertical drive unit for vertically moving the reflector.

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Номер записи: 29
28-02-2013 дата публикации

Deposition methods for the formation of iii/v semiconductor materials, and related structures

Номер: US20130049012A1
Автор: Christophe Figuet, Pierre Tomasini
Принадлежит: Soitec SA

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

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Номер записи: 30
07-03-2013 дата публикации

Metal Oxide Semiconductor Films, Structures, and Methods

Номер: US20130056691A1
Автор: Henry W. White, Tae-Seok Lee, Yungryel Ryu
Принадлежит: Moxtronics Inc

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

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Номер записи: 31
21-03-2013 дата публикации

Method for growing ii-vi semiconductor crystals and ii-vi semiconductor layers

Номер: US20130068156A1
Автор: Alex Fauler
Принадлежит: Albert Ludwigs Universitaet Freiburg

A method for growing II-VI semiconductor crystals and II-VI semiconductor layers as well as crystals and layers of their ternary or quaternary compounds from the liquid or gas phase is proposed. To this end, the solid starting materials are introduced into a growing chamber for the growing of crystals. Inside the growing chamber, carbon monoxide is supplied by way of reducing agent. At least certain zones of the growing chamber are heated to a temperature at which a first-order phase transition of the starting materials takes place and the starting materials pass into the liquid or gas phase. The starting materials are then cooled down accompanied by the formation of a semiconductor crystal or semiconductor layer, again with a first-order phase transition taking place. The oxygen present in the growing chamber is bound by the carbon monoxide and the formation of an oxide layer at the phase boundary of the growing semiconductor crystal or semiconductor layer is prevented.

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Номер записи: 32
21-03-2013 дата публикации

Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate

Номер: US20130069075A1
Автор: Hajime Fujikura, Taichiroo Konno, Yuichi Oshima
Принадлежит: Hitachi Cable Ltd

A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

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Номер записи: 33
21-03-2013 дата публикации

CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE

Номер: US20130069078A1
Автор: Iwata Hirokazu, Sarayama Seiji
Принадлежит:

A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal. 123-. (canceled)24. A method for producing a columnar-shaped group-III nitride crystal , the method comprising:{'sup': 5', '−2, '(a) obtaining a first group-III nitride crystal, grown by a flux method at a first crystal-growth speed, and having a dislocation density equal to or less than 10cm;'}{'sup': 5', '−2, '(b) growing a second group-III nitride crystal at a second crystal-growth speed, by vapor phase epitaxy method on a surface of the first group-III nitride crystal having the dislocation density equal to or less than 10cm,'}wherein the second crystal-growth speed is faster than the first crystal-growth speed, andwherein the first group-III nitride crystal is in a columnar shape, in which a length in a c-axis direction is longer than a length in an a-axis direction.25. The method according to claim 24 , further comprising slicing the first group-III nitride crystal before performing the growing.26. The method according to claim 25 , wherein the first group-III nitride crystal is capable of being reused.27. The method according to claim 24 , wherein the first group-III nitride crystal and the second group-III nitride crystal are gallium nitride crystals.28. The method according to claim 24 , wherein the flux method includes:detecting a temperature of the seed crystal and first group-III nitride crystal and a temperature of a melt mixture; andcontrolling a flow rate of the nitrogen source gas supplied into the melt mixture, to change the temperature of the seed crystal and ...

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Номер записи: 34
21-03-2013 дата публикации

Microwave plasma reactors

Номер: US20130069531A1
Автор: David King, Donnie K. Reinhard, Jes Asmussen, Jing Lu, Kadek W. Hemawan, M. Kagan Yaran, Michael Becker, Thomas Schuelke, Timothy Grotjohn, Yajun Gu
Принадлежит: Fraunhofer USA Inc, Michigan State University MSU

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

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Номер записи: 35
28-03-2013 дата публикации

Method and Apparatus For Depositing A Layer On A Semiconductor Wafer by Vapor Deposition In A Process Chamber

Номер: US20130078743A1
Автор: Georg Brenninger
Принадлежит: SILTRONIC AG

A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value.

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Номер записи: 36
11-04-2013 дата публикации

SELF-GETTERING DIFFERENTIAL PUMP

Номер: US20130087095A1
Автор: Kim Yong-Seung, Oh Seongshik
Принадлежит: Rutgers, The State University of New Jersey

A self-gettering differential pump for a molecular beam epitaxy system has a collimator with a length greater than its diameter mounted in front of a source in extended port geometry, wherein the reactant delivered by the source also serves as a gettering agent. 1. A self-gettering differential pump for a molecular beam epitaxy system , comprising:a collimator having a length greater than its diameter, wherein the collimator includes a vacuum chamber opening, a first end and a second end, wherein the first end is positioned in proximity to the vacuum chamber opening; anda port positioned in proximity to the second end of the collimator, the port comprising an effusion cell that, when activated, delivers a reactant through the collimator to the vacuum chamber opening;wherein the reactant also serves as a gettering agent.2. The self-gettering differential pump of claim 1 , further comprising a layer of reactant positioned on an inner sidewall of the collimator.3. The self-gettering differential pump of claim 1 , wherein the reactant is a multi-element source.4. The self-gettering differential pump of claim 1 , wherein the reactant comprises one or more of Sr claim 1 , Mg claim 1 , Ca claim 1 , Ba claim 1 , Ti and Zn.5. The self-gettering differential pump of claim 4 , wherein the reactant comprises strontium.6. The self-gettering differential pump of claim 1 , wherein a ratio of length to diameter of the collimator is greater than 10.7. The self-gettering differential pump of claim 1 , wherein a ratio of length to diameter of the collimator is from about 2 to about 7.8. A molecular beam epitaxy system claim 1 , comprising:a vacuum chamber having an opening; and a collimator having a length greater than its diameter, the collimator comprising, a first end and a second end, wherein the first end is positioned in proximity to the opening; and', 'a port positioned in proximity to the second end of the collimator, the port comprising an effusion cell that, when activated, ...

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Номер записи: 37
11-04-2013 дата публикации

Nitride semiconductor wafer, nitride semiconductor device, and method for growing nitride semiconductor crystal

Номер: US20130087762A1
Автор: Hung Hung, Jongil Hwang, Naoharu Sugiyama, Shinya Nunoue, Tomonari SHIODA
Принадлежит: Toshiba Corp

According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 18 cm −3 or more and less than 1×10 21 cm −3 . The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

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Номер записи: 38
11-04-2013 дата публикации

Epitaxial growth substrate, semiconductor device, and epitaxial growth method

Номер: US20130087807A1
Автор: Daisuke Hino, Tetsuya Ikuta, Tomohiko Shibata
Принадлежит: Dowa Electronics Materials Co Ltd

In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

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Номер записи: 39
11-04-2013 дата публикации

Method for forming nanocrystalline silicon film

Номер: US20130089972A1
Автор: Min Koo Han, Sun Jae Kim
Принадлежит: SNU R&DB FOUNDATION

Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.

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Номер записи: 40
18-04-2013 дата публикации

GRAPHENE PATTERN AND PROCESS OF PREPARING THE SAME

Номер: US20130095305A1
Автор: CHOI Jae-Young, SHIN Hyeon-jin, YOON Seon-mi
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant. 1. A graphene pattern comprising: 1-300 layers of graphene , which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other , andwherein the graphene is disposed on at least one surface of a substrate.2. The graphene pattern of claim 1 , having a single crystalline structure claim 1 , wherein a D band/G band peak ratio is equal to or less than 0.2 claim 1 , when measured in a Raman spectrum of the graphene.3. The graphene pattern of claim 1 , having 1-60 layers of graphene.4. The graphene pattern of claim 1 , further comprising a graphitizing catalyst interposed between the substrate and the graphene.5. The graphene pattern of claim 4 , wherein the graphitizing catalyst is at least one selected from the group consisting of Ni claim 4 , Co claim 4 , Fe claim 4 , Pt claim 4 , Au claim 4 , Al claim 4 , Cr claim 4 , Cu claim 4 , Mg claim 4 , Mn claim 4 , Mo claim 4 , Rh claim 4 , Si claim 4 , Ta claim 4 , Ti claim 4 , W claim 4 , U claim 4 , V and Zr.6. A process of preparing a graphene pattern claim 4 , the process comprising:preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed;contacting a carbonaceous material with the substrate on which the graphene pattern is formed; andforming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere,wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, andwherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a ...

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Номер записи: 41
25-04-2013 дата публикации

GAS-PHASE SYNTHESIS OF WIRES

Номер: US20130098288A1
Автор: Deppert Knut, Heurlin Magnus, Magnusson Martin, Samuelson Lars
Принадлежит: QUNANO AB

The present invention provides a method and a system for forming wires () that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires () are grown from catalytic seed particles () suspended in a gas within a reactor. Due to a modular approach wires () of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control. 1. A method for forming nanowires comprising:providing catalytic seed particles suspended in a gas,providing gaseous precursors that comprise constituents of the nanowires to be formed, andmaking at least one seed crystal at the surface of the at least one catalytic particle, andgrowing epitaxially at least one nanowire from the at least one formed seed crystal in a gas-phase synthesis including the gaseous precursors while the catalytic seed particles are suspended in the gas.2. The method of claim 1 , wherein the nanowires are formed in a continuous process.3. The method of claim 1 , wherein the nanowires formed are carried by the gas.4. (canceled)5. The method of claim 1 , wherein the growth conditions during growth of each nanowire are varied by controlling one or more of parameters associated with: precursor composition claim 1 , precursor molar flow claim 1 , carrier gas flow claim 1 , temperature claim 1 , pressure or dopants claim 1 , such that a nanowire segment is axially grown on a previously formed nanowire portion in a longitudinal direction thereof claim 1 , or a shell is radially grown on the previously formed nanowire portion in a radial direction thereof claim 1 , or material is added as a combination of axial and radial growth.6. The method of claim 5 , wherein the growth conditions are varied to obtain hetero structures with respect to composition claim 5 , doping claim 5 , conductivity type within each nanowire.7. The ...

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Номер записи: 42
25-04-2013 дата публикации

METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR

Номер: US20130098289A1
Автор: Archer Melissa, Atwater Harry, Hamamjy Roger, He Gang, Hegedus Andreas, Higashi Gregg, Sonnenfeldt Stewart, Sorabji Khurshed
Принадлежит: Alta Devices, Inc.

Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step. 1. A chemical vapor deposition system , comprising:an entrance isolator operable to prevent contaminants from entering the system at an entrance of the system;an exit isolator operable to prevent contaminants from entering the system at an exit of the system;an intermediate isolator disposed between the entrance and exit isolators;a first deposition zone disposed adjacent the exit isolator; anda second deposition zone disposed adjacent the exit isolator, wherein the intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone.2. The system of claim 1 , wherein a gas is injected into the entrance isolator at a first flow rate to prevent back diffusion of gases from the first deposition zone.3. The system of claim 1 , wherein the gas is injected into the intermediate isolator at a first flow rate to prevent back mixing of gases between the first deposition zone and the second deposition zone.4. The system of claim 1 , wherein a gas is injected into the exit isolator at a first ...

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Номер записи: 43
25-04-2013 дата публикации

Architectural construct having a plurality of implementations

Номер: US20130101808A1
Автор: Roy Edward McAlister
Принадлежит: McAlister Technologies LLC

An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct can be configured as a solid mass or as parallel layers that can be on a nano-, micro-, and macro-scale. Its configuration can determine its behavior and functionality under a variety of conditions. Implementations of an architectural construct can include its use as a substrate, sacrificial construct, carrier, filter, sensor, additive, and catalyst for other molecules, compounds, and substances, or may also include a means to store energy and generate power.

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Номер записи: 44
25-04-2013 дата публикации

Doped Nanoparticles and Methods of Making and Using Same

Номер: US20130101848A1
Автор: Christopher J. Patridge, Luisa Whittaker, Peter Marley, Sarbajit Banerjee
Принадлежит: Christopher J. Patridge, Luisa Whittaker, Peter Marley, Sarbajit Banerjee

Doped nanoparticles, methods of making such nanoparticles, and uses of such nanoparticles. The nanoparticles exhibit a metal-insulator phase transition at a temperature of −200° C. to 350° C. The nanoparticles have a broad range of sizes and various morphologies. The nanoparticles can be used in coatings and in device structures.

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Номер записи: 45
02-05-2013 дата публикации

GALLIUM TRICHLORIDE INJECTION SCHEME

Номер: US20130104802A1
Автор: Arena Chantal, Werkhoven Christiaan
Принадлежит: SOITEC

A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms. 1. A system for forming a Group III-V semiconductor material comprising gallium , the system comprising:a source of one or more gaseous Group III precursors as one reactant,a source of a gaseous Group V component as another reactant,a reaction chamber that receives the reactants for reaction therein so as to deposit the Group III-V semiconductor material on one or more substrates supported on one or more susceptors therein, andone or more heating structures for heating the gaseous Group III precursor(s) prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.2. The system of claim 1 , wherein the source of the gaseous Group II precursor is gallium trichloride and the source is configured and sized to continuously deliver the gallium trichloride at a mass flow of at least 50 g gallium/hour to facilitate high volume manufacture of the semiconductor material.3. The system of claim 2 , wherein the heating structures heat the gaseous gallium trichloride precursor at least 700° C. prior to reacting to substantially decompose all dimers claim 2 , trimers or other molecular variations of the precursor.4. The system of claim 2 , wherein at least one of the heating structures is arranged and configured to the heat gallium trichloride precursor subsequent to its entry ...

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Номер записи: 46
02-05-2013 дата публикации

CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME

Номер: US20130108877A1
Автор: Blomberg Tom E.
Принадлежит:

Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO. 1. A method of forming crystalline oxides comprising:providing a substrate;depositing a strontium titanate layer on the substrate by atomic layer deposition; andsubjecting the strontium titanate layer to a post-deposition anneal (PDA) under conditions selected to produce large single crystal domains in the strontium titanate layer.2. The method of claim 1 , wherein the strontium titanate layer has a thickness claim 1 , and wherein subjecting the strontium titanate layer to the PDA comprises forming single crystal domains having lateral dimensions exceeding the thickness by at least a factor of two.3. The method of claim 2 , wherein subjecting the strontium titanate layer to the PDA comprises forming single crystal domains having lateral dimensions exceeding the thickness by at least a factor of five.4. The method of claim 1 , wherein providing the substrate comprises providing an exposed crystal enhancement layer over a wafer.5. The method of claim 4 , wherein the crystal enhancement layer comprises a noble metal layer.6. The method of claim 5 , wherein the crystal enhancement layer comprises a platinum layer.7. The method of claim 4 , further comprising cleaning the crystal enhancement layer prior to depositing the strontium titanate layer by ALD.8. The method of claim 1 , further comprising claim 1 , after subjecting the strontium titanate ...

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Номер записи: 47
16-05-2013 дата публикации

SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS

Номер: US20130118408A1
Автор: Beaumont Bernard, Faurie Jean-Pierre
Принадлежит: SAINT-GOBAIN CERAMICS & PLASTICS, INC.

A system used in the formation of a semiconductor crystalline material includes a first chamber configured to contain a liquid metal and a second chamber in fluid communication with the first chamber, the second chamber having a greater volume than a volume of the first reservoir chamber. The system further includes a vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product. 1. A system used in the formation of a semiconductor crystalline material comprising:a first chamber configured to contain a liquid metal;a second chamber in fluid communication with the first chamber, the second chamber having a greater surface area than a surface area of the first reservoir chamber; anda vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product.2. The system of claim 1 , further comprising an exit coupled to the first chamber configured to remove the metal halide vapor phase product from the first chamber.3. The system of claim 2 , wherein the exit conduit is coupled to a growth chamber.4. The system of claim 1 , wherein the second chamber comprises a volume greater than a volume of the first reservoir claim 1 , wherein the second chamber comprises a volume at least 10 times greater than a volume of the first reservoir chamber volume.5. The system of claim 1 , wherein the second chamber comprises a surface area at least 2 times greater than a surface area of the first reservoir chamber volume.68-. (canceled)9. The system of claim 1 , wherein the vapor delivery conduit is a blower positioned in an upper half of the first chamber with respect to a height of the first chamber.10. The system of claim 9 , wherein the blower is configured to deliver the vapor phase reactant material to an upper ...

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Номер записи: 48
16-05-2013 дата публикации

Large area nitride crystal and method for making it

Номер: US20130119401A1
Автор: Derrick S. Kamber, Douglas W. Pocius, James S. Speck, Mark P. D'Evelyn
Принадлежит: Soraa Inc

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 49
23-05-2013 дата публикации

CHEMICAL VAPOR DEPOSITION OR EPITAXIAL-LAYER GROWTH REACTOR AND SUPPORTER THEREOF

Номер: US20130125820A1
Автор: Jiang Yong, YIN Gerald Zheyao
Принадлежит:

A chemical vapor deposition or epitaxial-layer growth reactor includes a reaction chamber. At least one substrate carrier and a supporter for supporting the substrate carrier are provided in the reaction chamber. The substrate carrier includes a first surface and a second surface. The second surface of the substrate carrier is provided with at least one recess concaved inwardly. The supporter includes: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part including a supporting surface; and a plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier, the plug-in part of the supporter being inserted detachably in the recess, so as to enable the substrate carrier to be placed on and supported by the supporter. 1. A chemical vapor deposition or epitaxial-layer growth reactor , comprising a reaction chamber in which a substrate carrier and a supporter for supporting the substrate carrier are provided , whereinthe substrate carrier comprises a first surface and a second surface, the first surface is configured to place several substrates to be processed thereon; the second surface of the substrate carrier is provided with at least one recess concaved inwardly;the supporter comprises: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part comprising a supporting surface; and at least one plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier; andthe at least one plug-in part of the supporter is inserted detachably into the at least one recess, so as to enable the substrate carrier to be placed on and supported by the supporter, and in a supporting case, the supporting surface of the supporting part at least partially contacts with at least a ...

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Номер записи: 50
30-05-2013 дата публикации

MICRO COIL, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF

Номер: US20130136912A1
Автор: Motojima Seiji
Принадлежит: CMC ADVANCED R&D. CO., LTD

A reaction container includes a cylindrical container body, a source gas introduction pipe group and a gas discharge pipe group extended in the opposite directions from both left and right side portions of the container body, and a cylindrical substrate inserted into the container body. Source gases introduced from the source gas introduction pipe group into the container body are thermally decomposed by the reaction with a catalyst carried on the substrate at a predetermined high temperature to grow micro coils from the substrate. 1. A micro coil which grows from a substrate based on gaseous carbon species produced on said substrate by thermally decomposing source gases using a catalyst under a predetermined high temperature , the source gases being introduced into a container body of a reaction container from one lateral direction facing wall portion thereof , and said reaction container including said container body and said substrate inserted into said container body in the axial direction and carrying the catalyst facing the inner peripheral surface of said container body so as to introduce the source gases producing gaseous carbon species when thermally decomposed into said container body from one lateral direction facing wall portion of both lateral direction facing wall portions of said container body and to discharge gases in said container body from the other direction facing wall portion of both the lateral direction facing wall portions.2. A manufacturing method of micro coils , comprising:a heat process for heating and maintaining a cylindrical container body of a reaction container at a predetermined high temperature, said reaction container including said container body and a substrate inserted into said container body in the axial direction and carrying a catalyst facing the inner peripheral surface of said container body so as to introduce source gases producing gaseous carbon species when thermally decomposed into said container body from a ...

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Номер записи: 51
06-06-2013 дата публикации

Method and jig for holding silicon wafer

Номер: US20130140752A1
Автор: Toshiaki Ono, Yumi Hoshino
Принадлежит: Individual

Provided are a method and a jig for holding a silicon wafer, which are applied to the production of the silicon wafer having {110} or {100} plane as its principal surface, in which the silicon wafer is held while a silicon wafer holding positions are properly defined at wafer edge regions relative to the reference direction as being from the center of the silicon wafer toward <110> in crystal orientation in parallel to the wafer surface. In handling the silicon wafer, generation of contact scratches is suppressed as little as possible, and a fracture which is caused by development of the crack initiating from easily generated contact scratches can be prevented in the silicon wafer, particularly in the silicon wafer having {110} plane as its principal surface.

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Номер записи: 52
06-06-2013 дата публикации

METHOD FOR PRODUCING DIAMOND LAYERS AND DIAMONDS PRODUCED BY THE METHOD

Номер: US20130143022A1
Автор: Fischer Martin, Gsell Stefan, Schreck Matthias
Принадлежит: UNIVERSITAET AUGSBURG

The present invention relates to a method for producing diamond layers, wherein firstly, in a first growing step, diamond is grown on a growing surface of a off axis or a off-axis heterosubstrate in such a way that a texture width, in particular a polar and/or azimuthal texture width, of a diamond layer produced during the growth decreases with increasing distance from the substrate and then, in a second growing step, diamond is grown in such a way that the texture width of the diamond layer remains substantially constant as the distance from the substrate further increases, and lattice planes of the substrate being inclined by an angle greater than zero with respect to the growing surface. 1. A method for producing diamond layers , wherein diamond is first grown in a first growth step onto a growth surface of an off-axis heterosubstrate or a off-axis heterosubstrate such that a texture width , in particular a polar and/or azimuthal texture width , of a diamond layer arising through the growing on reduces with an increasing distance from the substrate and then , in a second growth step , diamond is grown on so that the texture width of the diamond layer remains substantially constant with a further increasing spacing from the substrate , wherein networkplanes or network planes of the substrate being inclined by an angle greater than zero with respect to the growth surface.2. A method for producing diamond layers , wherein diamond is grown onto a growth surface of an off-axis heterosubstrate or a off-axis heterosubstrate; wherein the heterosubstrate has an iridium layer on an off-axis buffer layer , on a preferably monocrystalline silicon substrate; and wherein network planes of the iridium layer are inclined by an angle larger than zero with respect to the growth surface.3. The method in accordance with claim 2 , wherein the buffer layer is or has an oxide buffer layer claim 2 , preferably yttria-stabilized zirconia (YSZ) claim 2 , with the heterosubstrates ...

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Номер записи: 53
13-06-2013 дата публикации

METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT

Номер: US20130145984A1
Автор: LIU Bo, Song Zhitang, Wan Xudong, Wu Guanping, Yang Zuoya, Zhang Chao, Zhang Ting
Принадлежит:

This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region. 1. A method of epitaxial growth effectively preventing auto-doping effect , characterized by comprising the following steps:1) Preparing the semiconductor substrate having heavily-doped buried layer and removing surface oxide from said semiconductor substrate;2) Cleaning the reaction chamber to be used so as to remove impurities from the inner wall of the reaction chamber;3) Loading said semiconductor substrate into the cleaned reaction chamber and pre-baking said semiconductor substrate under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of said semiconductor substrate;4) Under high temperature and low gas flow conditions, growing a first intrinsic ...

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Номер записи: 54
20-06-2013 дата публикации

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Номер: US20130152852A1
Автор: Bondokov Robert T., Morgan Kenneth E., Schowalter Leo, Slack Glen A.
Принадлежит: CRYSTAL IS, INC.

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138-. (canceled)39. A method of growing single-crystal AlN , the method comprising:{'sub': '2', 'providing in a crystal growth enclosure a vapor comprising Al and N; and'}{'sup': −1', '−1, 'depositing the vapor as single-crystalline AlN while pushing the crystal growth enclosure at a rate less than an intrinsic growth rate of the single-crystalline AlN, the single-crystalline AlN having at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4,500 nm.'}40. The method of claim 39 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm.41. The method of claim 40 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 40 ,500 nm.42. The method of claim 39 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.43. The method of claim 39 , wherein the single-crystalline AlN has a microvoid density less than approximately 10cm.44. The method of claim 39 , further comprising claim 39 , following deposition claim 39 , the step of slicing a AlN wafer from the single-crystalline AlN.45. ...

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Номер записи: 55
20-06-2013 дата публикации

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

Номер: US20130152853A1
Автор: ADACHI Ayumu, FUJIBAYASHI Hiroaki, ITO Hideki, ITO Masahiko, KAMATA Isaho, NAITO Masami, NISHIKAWA Koichi, SATO Yuusuke, SUZUKI Kunihiko, TSUCHIDA Hidekazu
Принадлежит:

A film-forming apparatus supplies a plurality of gases toward a substrate in a chamber using a shower plate . The shower plate has a plurality of gas flow paths extending within the shower plate along a first face of the substrate side and connected to gas pipes supplying a plurality of gases, and a plurality of gas jetting holes bored such that the plurality of gas flow paths and the chamber communicate with each other on the first face side. In the film-forming apparatus , the plurality of gases supplied from the gas pipes to the plurality of gas flow paths of the shower plate are supplied from the gas jetting holes to the substrate without being mixed inside of and vicinity of the shower plate 1. A film-forming apparatus including a film-forming chamber and a shower plate which is provided at an upper section of the film-forming chamber and through which gases supplied to the film-forming chamber pass , whereinthe shower plate has a first face directed to inside of the film-forming chamber,a second face opposed to the first face and directed to outside of the film-forming chamber,a plurality of gas flow paths extending between the first face and the second face along the first and second faces; anda plurality of gas jetting holes which causes the plurality of gas flow paths and the first face to communicate with each other, whereinthe gases supplied from respective ends of the plurality of gas flow paths are jetted from the plurality of gas jetting holes toward the inside of the film-forming chamber.2. The film-forming apparatus according to claim 1 , further comprising a gas supply control mechanism controlling a timing of supplying a first gas to at least one of the plurality of gas flow paths and a timing of supplying a second gas to another gas flow path of the plurality of gas flow paths.3. The film-forming apparatus according to claim 1 , wherein the shower plate is provided with a colling mechanism.4. The film-forming apparatus according to claim 3 , ...

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Номер записи: 56
27-06-2013 дата публикации

Method of Manufacturing III-Nitride Crystal

Номер: US20130160699A1
Автор: Miyanaga Michimasa, Mizuhara Naho, Nakahata Hideaki, NAKAHATA Seiji, Okahisa Takuji, Tanizaki Keisuke, Uematsu Koji
Принадлежит: Sumitomo Electric Industries, Ltd.

Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. 1. A method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001} , designated by choice , the III-nitride crystal manufacturing method including:a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation;a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; anda step of growing III-nitride crystal onto the major surfaces of the substrates.2. A III-nitride crystal manufacturing method as set forth in claim 1 , wherein the designated plane orientation is misoriented by an off angle of 5° or less with respect to any crystallographically equivalent plane orientation selected from the group consisting of {1−10x} (wherein x is a whole number) claim 1 , {11−2y} ( ...

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Номер записи: 57
27-06-2013 дата публикации

BARRIER GUIDED GROWTH OF MICROSTRUCTURED AND NANOSTRUCTURED GRAPHENE AND GRAPHITE

Номер: US20130160701A1
Автор: Arnold Michael S., Gopalan Padma, Kim Myungwoong, Safron Nathaniel S.
Принадлежит:

Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene. 1. A method for growing patterned , single-crystalline graphene comprising depositing a graphene growth barrier that defines a pattern on a substrate surface; andgrowing graphene on the substrate surface, around the graphene growth barrier.2. The method of claim 1 , wherein the substrate surface comprises a metal graphene growth catalyst.3. The method of claim 1 , wherein growing graphene on the substrate surface comprises growing the graphene via chemical vapor deposition and further wherein the growth of the graphene occurs laterally on the surface from one or more points of nucleation.4. The method of claim 3 , wherein the growth of the graphene is non-epitaxial.5. The method of claim 1 , wherein the growth barrier comprises aluminum oxide.6. The method of claim 3 , wherein the growth barrier comprises aluminum oxide.7. The method of claim 1 , wherein the depositing a graphene growth barrier comprises transferring a pre-patterned graphene growth barrier template onto the substrate surface claim 1 , depositing the graphene growth barrier onto the substrate surface around the pre-patterned graphene growth barrier template claim 1 , and removing the pre-patterned graphene growth barrier template.8. The method of claim 7 , wherein the pre-patterned graphene growth barrier template comprises a self-assembled block copolymer film that defines a pattern claim 7 , and further wherein the step of depositing the graphene growth barrier onto the substrate surface comprises etching the pattern into the self-assembled block copolymer film by selectively removing portions of the self-assembled block ...

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Номер записи: 58
04-07-2013 дата публикации

Targeted temperature compensation in chemical vapor deposition systems

Номер: US20130167769A1
Автор: Bassam Shamoun
Принадлежит: Veeco Instruments Inc

Targeted temperature compensation for use with a chemical vapor deposition (CVD) apparatus. A localized temperature monitoring system is configured to provide localized temperature information representing surface temperatures of portions of the one or more wafers on a wafer carrier while the wafer carrier is rotating in a CVD process. A temperature profiling system is configured to generate a temperature profile that is indicative of localized cold spots on a surface of the one or more wafers. The temperature profile is based on the localized temperature information. A targeted heating system is configured to selectively apply localized heat to the localized cold spots dynamically based on the temperature profile such that a thermal distribution of the surface of the one or more wafers is made more uniform while a CVD process is carried out on the CVD apparatus.

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Номер записи: 59
04-07-2013 дата публикации

VAPOR PHASE GROWTH APPARATUS

Номер: US20130167771A1
Автор: Ubukata Akinori, YAMAGUCHI Akira
Принадлежит: TAIYO NIPPON SANSO CORPORATION

A vapor phase growth apparatus with a measuring means which can measure the state of the warpage of a substrate, which is a rotation/revolution type vapor phase growth apparatus with a susceptor and a plurality of substrate retaining members in a chamber, wherein a measuring means comprising a laser source which continuously emits a laser light in a direction perpendicular to the surface of the substrate which is retained in the substrate retaining member and is rotating/revolving by the rotation of the susceptor and a light receiving portion which receives a laser light reflected on the surface of the substrate is fixed on the outer surface of a laser transparent portion provided on the chamber; and a judging means which judges that the substrate is in an abnormal state when the variation of the reflected light received by the light receiving portion is larger than a preset variation is provided. 1. A rotation/revolution type vapor phase growth apparatus comprisinga disk-shaped susceptor rotatably provided in a chamber,a plurality of substrate retaining members rotatably provided at an equal interval in the circumferential direction of the outer peripheral portion of the susceptor,a circular substrate retaining concave portion provided on the surface of the substrate retaining member,a gas introducing portion which radially introduces a raw material gas to the front surface side of a susceptor from a center portion of the chamber,an exhaust portion provided on the outer peripheral portion of the chamber anda heating means which heats a substrate retained in the substrate retaining concave portion, and in whichthe raw material gas is introduced to the front surface side of the susceptor from the gas introducing portion while rotating/revolving the substrate retaining member along with the rotation of the susceptor to perform vapor phase growth of a thin film on the surface of the substrate heated by the heating means, characterized in thata measuring means ...

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Номер записи: 60
11-07-2013 дата публикации

METHOD OF MANUFACTURING SUBSTRATE

Номер: US20130178049A1
Автор: CHOI Young Jun, HWANG Hyun Hee, Jang Hyun Soo, KIM Jin Hun, LEE Hae Yong, OH Hea Kon
Принадлежит: LUMIGNTECH CO., LTD.

The present invention is directed to a method of manufacturing a substrate, which includes loading a base substrate into a reaction furnace; forming a buffer layer on the base substrate; forming a separation layer on the buffer layer; forming a semiconductor layer on the separation layer at least two; and separating the semiconductor layer from the base substrate via the separation layer through natural cooling by unloading the base substrate from the reaction furnace. 1. A method of manufacturing a substrate , comprising:raising temperature of a base substrate;forming a buffer layer on the base substrate;forming a separation layer on the buffer layer;forming a semiconductor layer on the separation layer at least two; andseparating the semiconductor layer from the base substrate via the separation layer by cooling the base substrate.2. The method according to claim 1 , wherein the buffer layer is formed using a first source gas including a Group V element.3. The method according to claim 2 , wherein the buffer layer is formed by nitriding the base substrate using NHgas.4. The method according to claim 3 , wherein the separation layer is formed at a first temperature using the first source gas and a second source gas.5. The method according to claim 4 , wherein the second source gas is a gas containing chlorine (Cl).6. The method according to claim 5 , wherein the separation layer is formed of NHCl using NHand HCl.7. The method according to claim 6 , wherein the semiconductor layer is formed using a material containing a Group III element claim 6 , a third source gas formed by the second source gas claim 6 , and the first source gas.8. The method according to claim 7 , wherein the semiconductor layer includes a GaN layer formed through a reaction between GaCl and NHusing Ga and HCl.9. The method according to claim 8 , wherein a portion of the thickness of the semiconductor layer is formed at the first temperature claim 8 , and the rest of the thickness of the ...

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Номер записи: 61
18-07-2013 дата публикации

SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER

Номер: US20130180447A1
Автор: OHNISHI Masato
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface. 16-. (canceled)7. A susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer , wherein a pocket in which the semiconductor substrate is to be arranged is formed on an upper surface of the susceptor , the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion formed below the upper-stage-pocket portion and on a central side of the pocket , hole portions that penetrate to reach a back surface of the susceptor and are opened at the time of performing the vapor-phase growth are formed in the lower-stage-pocket portion , and a protruding portion is provided on the back surface of the susceptor at least at a position corresponding to that of the upper-stage-pocket portion.8. The susceptor according to claim 7 ,wherein a thickness of the protruding portion is not more than three times a thickness of the susceptor excluding the protruding portion at the position corresponding to that of the upper- ...

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Номер записи: 62
08-08-2013 дата публикации

GAS INJECTORS FOR CHEMICAL VAPOUR DEPOSITION (CVD) SYSTEMS AND CVD SYSTEMS WITH THE SAME

Номер: US20130199441A1
Автор: Arena Chantal, Bertram, JR. Ronald Thomas, Lindow Ed, Werkhoven Christiaan
Принадлежит: SOITEC

The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates. 1. A method for epitaxial deposition of a monocrystalline Group III-V semiconductor material , which comprises reacting an amount of a gaseous Group III precursor of gallium trichloride as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to deposit the semiconductor material on one or more substrates , which method comprises:heating the Group III precursor in a heating zone external to the reaction chamber to a temperature sufficient to decompose dimers therein as well as to prevent dimer formation of the precursor prior to contacting the one or more substrate(s); andpassing the Group III precursor through a funnel or wedge shaped channel that increases in cross-section in the direction of gas flow in order to provide an expanded laminar stream of heated Group III precursor gas along a wall of the reaction chamber to the one or more substrate(s), with the stream being sufficiently expanded to flow above each of the one or more substrate(s) to thereby deposit the semiconductor material on the substrate(s).2. The method of which further comprises passing a laminar gas stream of heated Group V component into the reaction chamber in a flow path above the Group III precursor gas stream and at a velocity such that the Group V component and Group III precursor ...

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Номер записи: 63
15-08-2013 дата публикации

Methods of Making Nanowires

Номер: US20130209683A1
Автор: Xu Jingming
Принадлежит: BROWN UNIVERSITY

The present invention is directed towards methods for growing diamond nanowires via chemical vapor deposition and apparatuses that incorporate these diamond nanowires. 1. A method of making wires on a nanometer scale comprising depositing carbon from a chemical vapor onto a substrate in the presence of a transition metal catalyst and at atmospheric pressure to create a carbon nanowire with the carbon in the form of diamond.2. The method according to wherein the carbon deposited from a chemical vapor is provided by methane.3. The method according to wherein the transition metal catalyst is iron.4. The method according to wherein gas is flowed within the chamber while the chamber temperature is lowered is pure hydrogen.5. The method according to wherein the gas is hydrogen.6. The method according to wherein the chemical vapor deposition process is carried out at 900° C.7. The method according to further comprising a transition metal catalyst solution dispersed on the substrate.8. The method according to wherein the transition metal catalyst is an iron catalyst solution.9. The method according to wherein the diamond nanowires are straight and uniform in diameter.10. The method according to wherein the diamond nanowires are comprised of crystal domains of at least 30 nm×30 nm.11. The method according to wherein the diamond nanowires are individually comprised of single crystals with low defect levels.12. The method according to wherein the diamond nanowires have a cubic diamond structure.13. The method according to wherein the diamond nanowires are encased within a graphite shell or layers of amorphous carbon. This application claims priority to U.S. Provisional Application No. 61/371,239, filed on Aug. 6, 2010 and hereby incorporated herein by reference in its entirety for all purposes.The present invention relates to the field nanotechnology and, in particular, to the fields of nanowire growth using chemical vapor deposition.Among the discovered carbon allotropes, ...

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Номер записи: 64
22-08-2013 дата публикации

Method for Manufacturing Optical Element

Номер: US20130214325A1
Автор: Kazuya Takada, Toru Kinoshita
Принадлежит: Tokuyama Corp

A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

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Номер записи: 65
22-08-2013 дата публикации

PEROVSKITE TO BROWNMILLERITE COMPLEX OXIDE CRYSTAL STRUCTURE TRANSFORMATION INDUCED BY OXYGEN DEFICIENT GETTER LAYER

Номер: US20130216800A1
Автор: Brock Joel D., Ferguson John, Fitting Kourkoutis Lena, Muller David A., Woll Arthur R.
Принадлежит:

A method for forming a heterostructure includes forming a first perovskite crystal structure complex oxide material layer over a substrate to a first thickness. A second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer is formed upon the first perovskite crystal structure complex oxide material layer. When the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer reaches a critical thickness that may approximate one-half to one times the first thickness, the first perovskite crystal structure complex oxide material layer spontaneously transforms into a first brownmillerite crystal structure complex oxide material layer, with an attendant transfer of substantially one-half oxygen atom per perovskite unit cell to the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer, thus forming a second perovskite crystal structure oxygen enriched complex oxide oxygen getter material layer. A particular heterostructure derives from the foregoing methodology. 1. A heterostructure comprising:a substrate;a brownmillerite crystal structure first complex oxide material layer of composition A2B2O5 located upon the substrate; anda perovskite crystal structure second complex oxide material layer of composition A′B′O3−δ′ located upon the first complex oxide material layer, where 3−δ′ is in a range from 1.5 to 3.0.2. The heterostructure of wherein the substrate comprises a perovskite crystal structure complex oxide material of composition A′B′O3.3. The heterostructure of wherein the A2B2O5 composition includes a range from A2B2O4.5 to about A2B2O5.5.4. The heterostructure of wherein:A and A′ are different metal cations; andB and B′ are different multivalent metal cations that are smaller than A and A′.5. The heterostructure of wherein the brownmillerite crystal structure first complex oxide material layer is selected from the group consisting of LSMO claim 1 , PCMO ...

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Номер записи: 66
29-08-2013 дата публикации

Base material for growing single crystal diamond and method for producing single crystal diamond substrate

Номер: US20130220214A1
Автор: Hitoshi Noguchi
Принадлежит: Shin Etsu Chemical Co Ltd

The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

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Номер записи: 67
12-09-2013 дата публикации

Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth

Номер: US20130233238A1
Автор: Thean Aaron, Vincent Benjamin, Witters Liesbeth
Принадлежит: IMEC

Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening. 1. A method comprising:providing a substrate comprising a first crystalline material, wherein the first crystalline material has a first lattice constant; a first level comprising a first opening extending through the first level, wherein a bottom of the first opening comprises the substrate, and', 'a second level on top of the first level, wherein the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening; and, 'providing a mask structure on the substrate, wherein the mask structure comprises the second crystalline material has a second lattice constant different than the first lattice constant, and', 'epitaxially growing the second crystalline material on the bottom of the first opening comprises trapping defects in the second crystalline material in at least one direction in the first opening., 'epitaxially growing a second crystalline material on the bottom of the first opening until the second crystalline material covers at ...

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Номер записи: 68
19-09-2013 дата публикации

Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Номер: US20130239615A1
Автор: Devi Shanker Misra
Принадлежит: IIA Technologies Pte Ltd

The present application discloses the details of a microwave plasma chemical vapor deposition process that uses Nitrogen and Diborane simultaneously in combination along with the Methane and Hydrogen gases to grow white color diamonds. The invention embodies using nitrogen to avoid inclusions and impurities in the CVD diamond samples and Diborane for the color enhancement during the growth of diamond. It is also found that heating of the so grown diamonds to 2000 C results in significant color enhancement due to the compensation of Nitrogen and Boron centers in the samples. The origin of the various colors in diamond is explained on the basis of the band diagram of CVD diamond.

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Номер записи: 69
19-09-2013 дата публикации

LOAD LOCK HAVING SECONDARY ISOLATION CHAMBER

Номер: US20130239879A1
Автор: Aggarwal Ravinder K., Davis Loring G., DiSanto John T., HILL ERIC R., Stoutjesdijk Jeroen
Принадлежит: ASM AMERICA, INC.

A load lock includes a chamber including an upper portion, a lower portion, and a partition between the upper portion and the lower portion, the partition including an opening therethrough. The load lock further includes a first port in communication with the upper portion of the chamber and a second port in communication with the lower portion of the chamber. The load lock includes a rack disposed within the chamber and a workpiece holder mounted on a first surface of the rack, wherein the rack and the workpiece holder are movable by an indexer that is capable of selectively moving wafer slots of the rack into communication with the second port. The indexer can also move the rack into an uppermost position, at which the first surface of the boat and the partition sealingly separate the upper portion and the lower portion to define an upper chamber and a lower chamber. Auxiliary processing, such as wafer pre-cleaning, or metrology can be conducted in the upper portion. 1. A method of transporting workpieces , the method comprising:loading a workpiece into a boat through a first port in communication with a first portion of a chamber of a load lock, the boat disposed in the chamber;transferring the workpiece to a workpiece holder mounted on a first surface of the boat;moving the boat towards a partition between the first portion of the chamber and a second portion of the chamber to sealably engage the partition with the first surface of the boat, wherein moving the boat comprises moving the workpiece holder into the second portion of the chamber, and sealably engaging the partition with the first surface of the boat;increasing the pressure of the second portion of the chamber; andunloading the workpiece through a second port in communication with the second portion of the chamber.2. The method of claim 1 , wherein the first portion of the chamber comprises a lower portion of the chamber and wherein the second portion of the chamber comprises an upper portion of the ...

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Номер записи: 70
19-09-2013 дата публикации

BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE

Номер: US20130239880A1
Автор: Noguchi Hitoshi
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. 1. A method for producing a single crystal diamond substrate comprising at least the steps of:preparing a single crystal SiC substrate;heteroepitaxially growing an iridium film or a rhodium film over the prepared single crystal SiC substrate;heteroepitaxially growing a single crystal diamond on the iridium film or the rhodium film heteroepitaxially grown; andseparating the single crystal diamond heteroepitaxially grown to obtain the single crystal diamond substrate.2. The method for producing a single crystal diamond substrate according to claim 1 , wherein the step of heteroepitaxially growing a MgO film on the single crystal SiC substrate is performed before the step of heteroepitaxially growing the iridium film or the rhodium film and the iridium film or the rhodium film is heteroepitaxially grown on the MgO film.3. The method for producing a single crystal diamond substrate according to claim 1 , wherein before the step of heteroepitaxially growing the single crystal diamond claim 1 , a bias treatment is preliminarily performed on a surface of the iridium film or the rhodium film.4. The method for producing a single crystal diamond substrate according to claim 2 , wherein before the step of heteroepitaxially growing the single crystal diamond claim 2 , a bias treatment is preliminarily performed on a surface of the iridium film or the rhodium film.5. The method for producing a single crystal diamond ...

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Номер записи: 71
19-09-2013 дата публикации

Non-polar plane of wurtzite structure material

Номер: US20130240876A1
Автор: CHANG Li, HO YEN-TENG
Принадлежит: NATIONAL CHIAO TUNG UNIVERSITY

The present invention relates to a method for growing a novel non-polar (13 0) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 0) plane obtained according to the aforementioned method. 1. A method for growing a non-polar (13 0) plane epitaxy layer of wurtzite structure , which comprises the following steps:providing a single crystal oxide with perovskite structure;selecting a plane of the single crystal oxide as a substrate; and{'o': {'@ostyle': 'single', '4'}, 'forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the substrate by a vapor deposition process.'}2. The method of claim 1 , wherein the single crystal oxide is an oxide with perovskite structure of LaAlO claim 1 , LaNiO claim 1 , LaGaO claim 1 , SrTiO claim 1 , (LaSr)(AlTa)O claim 1 , PrAlO claim 1 , or NdAlO.3. The method of claim 1 , wherein the non-polar (13 0) plane epitaxy layer is a zinc oxide claim 1 , or a Group III nitride.4. The method of claim 1 , wherein the zinc oxide is further doped with magnesium claim 1 , calcium claim 1 , strontium claim 1 , barium claim 1 , cadmium claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , or combinations thereof.5. The method of claim 3 , wherein the Group III nitride is gallium nitride claim 3 , indium nitride claim 3 , aluminum nitride claim 3 , indium gallium nitride claim 3 , aluminum gallium nitride claim 3 , aluminum indium nitride claim 3 , or aluminum indium gallium nitride.6. The method of claim 1 , wherein the plane is a crystal plane or a cross section of the single crystal oxide.7. The method of claim 1 , wherein the plane is a plane ...

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Номер записи: 72
19-09-2013 дата публикации

Fabrication method and fabrication apparatus of group iii nitride crystal substance

Номер: US20130244406A1
Автор: Fumitaka Sato, Hideyuki Ijiri, Hitoshi Kasai, Kensaku Motoki, Koji Uematsu, Naoki Matsumoto, Ryu Hirota, Seiji Nakahata, Shunsuke Fujita, Takuji Okahisa
Принадлежит: Sumitomo Electric Industries Ltd

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

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Номер записи: 73
26-09-2013 дата публикации

Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbide

Номер: US20130247816A1
Автор: Hidekazu Tsuchida, Hideki Ito, Isaho Kamata, Kunihiko Suzuki, Masahiko Ito, Masami Naito, Yuusuke Sato
Принадлежит: Denso Corp, Nuflare Technology Inc

A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.

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Номер записи: 74
26-09-2013 дата публикации

METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND METHOD FOR FABRICATING A NITRIDE SEMICONDUCTOR TEMPLATE

Номер: US20130247817A1
Автор: FUJIKURA Hajime, KONNO Taichiroo
Принадлежит: HITACHI CABLE, LTD.

A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section. 1. A metal chloride gas generator , comprising:a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side;a raw material section heater and a growing section heater each of which heats an inside of the reactor;an upstream end comprising a gas inlet; anda gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section,wherein the gas inlet pipe comprises a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.2. The metal chloride gas generator according to claim 1 , wherein the gas inlet pipe comprises a quartz glass and the suppressing section comprises an opaque section comprising an opaque ...

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Номер записи: 75
26-09-2013 дата публикации

Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate

Номер: US20130249060A1
Автор: Keiji Ishibashi
Принадлежит: Sumitomo Electric Industries Ltd

A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface.

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Номер записи: 76
03-10-2013 дата публикации

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

Номер: US20130260537A1
Автор: Hans Von Känel
Принадлежит: Sulzer Metco AG

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10̂-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

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Номер записи: 77
17-10-2013 дата публикации

METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL

Номер: US20130269600A1
Автор: Horio Naochika, Sato Yuka
Принадлежит:

The method includes a step of growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for ZnO single-crystal growth, wherein the MgZnO-based single-crystal layer is grown using a magnesium-based metal-organic compound having a Cp group, water vapor (HO) and a zinc-based metal-organic compound that does not contain oxygen. 1. A method for growing a magnesium-zinc-oxide (MgZnO)-based crystal on a zinc oxide (ZnO)-based crystal by MOCVD; the method comprising:growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for ZnO single-crystal growth,{'sub': '2', 'wherein said MgZnO-based single-crystal layer is grown using a magnesium-based metal-organic compound having a Cp group, water vapor (HO) and a zinc-based metal-organic compound that does not contain oxygen.'}2. The method according to claim 1 , wherein said upper limit temperature for ZnO single-crystal growth is a temperature at which a film vacancy defect is generated in a grown ZnO crystal when growth is performed at a growth pressure of less than 10 kPa using said water vapor and said zinc-based metal-organic compound that does not contain oxygen.3. The method according to claim 1 , comprising:growing, on a ZnO substrate, a ZnO single-crystal layer using said water vapor and said zinc-based metal-organic compound that does not contain oxygen,said MgZnO-based single-crystal layer being grown on said ZnO single-crystal layer at a growth temperature equal to or greater than said upper limit temperature, said upper limit temperature being a upper temperature for growing said ZnO single-crystal layer.4. The method according to claim 1 , wherein said MgZnO-based single-crystal layer is grown at a temperature equal to or greater than 850° C.5. The method according to claim 1 , wherein said MgZnO-based single- ...

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Номер записи: 78
24-10-2013 дата публикации

PRODUCTION METHOD FOR FLAT SUBSTRATE WITH LOW DEFECT DENSITY

Номер: US20130276696A1
Автор: Lee Andrew Eng-Jia, LEE Chong-Ming
Принадлежит:

The present invention discloses a production method for a flat substrate with low defect density. The method includes steps of: providing a substrate, performing selective growth of nanowires, performing lateral epitaxial growth of the nanowires, performing lateral coalescence of widened nanowires, performing high temperature annealing, and performing LED structure growth. The production method of the present invention generates vertical and lateral growth of the nanowires by choosing different concentrations of additives to produce a flat film, and generate a high efficiency LED semiconductor structure after annealing the flat film. 1. A production method for flat substrate with low defect density , comprising following steps of:providing a substrate, wherein the substrate is a base for growing subsequent layers, an un-doped semiconductor layer is formed on the substrate and an insulation layer is formed on the un-doped semiconductor layer, and the insulation layer has plural holes and is formed by coating an insulation material on the un-doped semiconductor layer, undergoing exposure and development the insulation material, and dry etching, so that the insulation layer functions as a selective growth mask with the holes;performing selective growth, wherein nanowires vertically grow on the un-doped semiconductor layer through the holes of the selective growth mask;performing lateral epitaxial growth, wherein the nanowires are grown laterally to form widened nanowires, the lateral epitaxial growth of the widened nanowires is controlled by adding additives of different concentration gradients;performing lateral coalescence, wherein a flat bump-free coalescence film from the top of the widened nanowires is formed;performing high temperature annealing, wherein a grain boundary at the junction of the widened nanowires is eliminated with a high temperature gas; andperforming LED structural growth, wherein a monocrystalline semiconductor structure grows from the flat bump ...

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Номер записи: 79
24-10-2013 дата публикации

METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE

Номер: US20130276697A1
Автор: Goto Hideki
Принадлежит: A.E. TECH CORPORATION

It is to suppress abnormal growth of GaN crystals around edge ends of a seed substrate. A susceptor is provided that has a pocket section in which a seed substrate is fixed, and a sub-susceptor provided between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap provided between the seed substrate and the sub-susceptor. 1. A method of fabricating a freestanding GaN substrate using vapor phase deposition comprising;supplying a source gas of a GaN crystal to a susceptor in which a seed substrate different from GaN is disposed; andsuppressing the GaN crystal around edge of the seed substrate disposed in the susceptor from being abnormally grown and vapor phase growing the freestanding GaN substrate,wherein the susceptor includes a pocket section in which the seed substrate is fixedly held, and a sub-susceptor between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap created between the seed substrate and sub-susceptor, thereby suppressing the abnormal growth of the GaN crystal around the edge of the seed substrate.2. The method according to claim 1 , wherein the gap has the same size as the thickness of the freestanding GaN substrate.3. The method according to claim 1 , wherein the size of the gap and the thickness of the freestanding GaN substrate are larger than 0 mm claim 1 , but not more than 2 mm claim 1 , respectively.4. The method according to claim 1 , wherein the sub-susceptor is made from sapphire claim 1 , single or poly-crystal silicon carbide claim 1 , or single or poly-crystal aluminum nitride.5. The method according to claim 1 , wherein sub-susceptor is not decomposed at temperature of at least room temperature or more claim 1 , but not less than 1200° C.6. The method according to claim 1 , wherein the vapor phase deposition is hydride vapor phase epitaxy (HVPE).7. An apparatus for fabricating a freestanding GaN substrate using vapor ...

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Номер записи: 80
24-10-2013 дата публикации

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

Номер: US20130280466A1
Автор: Andrew E. Souzis, Avinash K. Gupta, Gary E. Ruland, Ilya Zwieback, Ping Wu, Thomas E. Anderson, Varatharajan Rengarajan, Xueping Xu
Принадлежит: II VI Inc

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

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Номер записи: 81
24-10-2013 дата публикации

Method and apparatus for germanium tin alloy formation by thermal cvd

Номер: US20130280891A1
Автор: Errol Antonio C. Sanchez, Yi-Chiau Huang, Yihwan Kim
Принадлежит: Individual

A method and apparatus for forming semiconductive semiconductor-metal alloy layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy, optionally including silicon, is formed on the substrate. The metal precursor is typically a metal halide, which may be provided by evaporating a liquid metal halide, subliming a solid metal halide, or by contacting a pure metal with a halogen gas. A group IV halide deposition control agent is used to provide selective deposition on semiconductive regions of the substrate relative to dielectric regions. The semiconductive semiconductor-metal alloy layers may be doped, for example with boron, phosphorus, and/or arsenic. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

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Номер записи: 82
31-10-2013 дата публикации

Method for making epitaxial structure

Номер: US20130288457A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Individual

A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture.

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Номер записи: 83
14-11-2013 дата публикации

Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and Methods of Manufacture

Номер: US20130298823A1
Автор: Diduck Quentin, Ejeckam Felix, Faili Firooz, Francis Daniel, Lowe Frank Yantis, Matthews Kristopher, Zaytsev Sergey
Принадлежит:

A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications. 1. A method for synthetic diamond growth comprising the steps of:(a) providing a vacuum chamber having means for evacuating;(b) providing an engineered wafer comprising at least one layer of gallium nitride, said wafer having a diameter and a growth surface;(c) providing a table having a surface for holding said wafer, said table operatively configured to rotate along an axis perpendicular to said engineered wafer;(d) placing said wafer on said surface;(e) providing a cooled chuck with means for monitoring a temperature of said chuck;(f) placing said table onto said chuck;(g) maintaining a gap between said table and said chuck;(h) providing a multiplicity of refractory-metal filaments arranged in a linear one-dimensional array stretched in proximity of said wafer, said array being parallel to said growth surface, said multiplicity of filaments distanced from said growth surface by not more than 25 mm;(i) providing reaction gases to the chamber wherein said reaction gases comprise hydrogen and at least one carbon-bearing gas, and establish a process pressure; and 'wherein said cooled chuck maintains said chuck temperature below 800° C.', '(j) providing electrical power to said multiplicity of refractory-metal filaments, said electrical power being not less than 3 kW for one wafer, for a time sufficient to grow desired thickness of synthetic diamond,'}2. The method of claim 1 , wherein said growth surface is comprised of silicon ...

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Номер записи: 84
14-11-2013 дата публикации

SUBSTRATE PROCESSING SYSTEM WITH LAMPHEAD HAVING TEMPERATURE MANAGEMENT

Номер: US20130298832A1
Автор: Brillhart Paul, IU DONGMING, KUPPURAO Satheesh, Ranish Joseph M.
Принадлежит:

Apparatus for processing a substrate are provided herein. In some embodiments, a lamphead for use in substrate processing includes a monolithic member having a contoured surface; a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; and a plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities. 1. A lamphead for use in substrate processing , comprising:a monolithic member having a contoured surface;a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; anda plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities.2. The lamphead of claim 1 , further comprising:a plurality of coolant passages disposed in the monolithic member and proximate to the plurality of lamp passages.3. The lamphead of claim 2 , wherein the plurality of lamp passages are arranged in a plurality of first arcs concentric about a central axis of the monolithic member and wherein the plurality of coolant passages are disposed in a plurality of second concentric rings about the central axis of the monolithic member.4. The lamphead of claim 3 , wherein a first one of the plurality of lamp passages disposed farther from a central axis of the monolithic member has a longer length than a second one of the plurality of lamp passages disposed closer to the central axis of the monolithic member.5. The lamphead of claim 1 , wherein each lamp passage extends into the monolithic member from a corresponding reflector cavity of the plurality of reflector cavities claim 1 , and wherein each lamp passage is configured to accommodate a lamp.6. The lamphead of claim 1 , wherein at least two lamp passages ...

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Номер записи: 85
28-11-2013 дата публикации

GRAPHENE PRODUCTION USING LASER HEATED CRYSTAL GROWTH

Номер: US20130312662A1
Автор: Hauck James Pierre
Принадлежит: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Implementations and techniques for producing graphene are generally disclosed. 17.-. (canceled)8. An apparatus for producing graphene comprising:a seed crystal affixed to a support substrate such that the seed crystal faces substantially downwardly from the support substrate about a location;a feedstock injector configured to provide a feedstock;a laser configured to selectively generate a laser beam; andbeam shaping optics configured to couple the laser beam to at least a portion of the seed crystal and at least a portion of the feedstock about the location to form a downwardly hanging graphene crystal.9. The apparatus of claim 8 , further comprising:an electrostatic enclosure configured to selectively provide an electrostatic field, wherein the electrostatic field is effective to apply a straightening force to the downwardly hanging graphene crystal.10. The apparatus of claim 8 , wherein the support substrate comprises at least one of silicon carbide claim 8 , silicon dioxide or copper.11. The apparatus of claim 8 , wherein the seed crystal comprises a graphene seed crystal having a crystal growth axis aligned such that the feedstock from the feedstock injector and the laser beam are provided incident to the crystal growth axis.12. The apparatus of claim 8 , wherein the seed crystal is affixed to the support substrate with an epoxy.13. The apparatus of claim 8 , wherein the feedstock comprises at least one of carbon claim 8 , graphite particles claim 8 , an oxidizer or a reducer.14. The apparatus of claim 8 , wherein the laser comprises at least one of a COlaser claim 8 , a Nd:YAG laser or a laser diode.15. The apparatus of claim 8 , wherein the beam shaping optics comprise a reflaxicon.16. The apparatus of claim 8 , wherein the laser and the beam shaping optics are cooperatively configured to provide multiple laser beams in a linear two dimensional array.17. The apparatus of claim 8 , further comprising:a process unit control logic coupled to the feedstock ...

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Номер записи: 86
28-11-2013 дата публикации

GaN Epitaxy With Migration Enhancement and Surface Energy Modification

Номер: US20130313566A1
Автор: Boris BORISOV, Philip A. Kraus, Sandeep Nijhawan, Thai Cheng Chua, Yoga Saripalli
Принадлежит: Intermolecular Inc

Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

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Номер записи: 87
05-12-2013 дата публикации

Susceptor and method for manufacturing epitaxial wafer using the same

Номер: US20130319319A1
Автор: Masato Ohnishi
Принадлежит: Shin Etsu Handotai Co Ltd

The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion.

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Номер записи: 88
05-12-2013 дата публикации

Production Method of an Aluminum Based Group III Nitride Single Crystal

Номер: US20130319320A1
Автор: Hironaka Keiichiro, NAGASHIMA Toru
Принадлежит: TOKUYAMA CORPORATION

A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300° C. or more to 700° C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step, wherein the aluminum monohalide gas is converted to a solid by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50° C. or more than a temperature to which halogenated gas and aluminum contact in the reaction step; a separation step, wherein the aluminum trihalide gas is removed; and a crystal growth step, wherein the aluminum trihalide gas is used for an aluminum based group III nitride single crystal raw material, keeping its temperature equal to or higher than a temperature of the converting step. 1. A production method of aluminum based group III nitride single crystal , comprising:a reaction step, wherein a halogenated gas and an aluminum are made contact at a temperature of 300° C. or more to 700° C. or less, and a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas is produced,a converting step, wherein the aluminum monohalide gas in the mixed gas is converted to a solid substance by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50° C. or more than a temperature to which the halogenated gas and the aluminum contact in the reaction step,a separation step, wherein the aluminum trihalide gas is taken out by separating the solid substance and the gas, anda crystal growth step, wherein the aluminum trihalide gas is used for a raw material of aluminum based group III nitride single crystal without lowering its temperature and keeping the temperature equal to or higher than a temperature of the converting step.2. The production method of aluminum based group III nitride single ...

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Номер записи: 89
12-12-2013 дата публикации

Temperature-controlled purge gate valve for chemical vapor deposition chamber

Номер: US20130327266A1
Автор: Chantal Arena, Christiaan Werkhoven
Принадлежит: Soitec SA

The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl 3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

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Номер записи: 90
12-12-2013 дата публикации

Method of semiconductor film stabilization

Номер: US20130330911A1
Автор: Errol Antonio C. Sanchez, Yi-Chiau Huang, Yihwan Kim
Принадлежит: Individual

Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.

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Номер записи: 91
19-12-2013 дата публикации

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

Номер: US20130333611A1
Автор: De Indranil, Machuca Francisco
Принадлежит: Tivra Corporation

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors. 1. A lattice matching layer for use in a multilayer substrate structure , the lattice matching layer including:a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; anda second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature,wherein a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.2. The lattice matching layer of claim 1 , wherein a linear ...

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Номер записи: 92
19-12-2013 дата публикации

METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND

Номер: US20130333613A1
Автор: Einav Moshe
Принадлежит: Mosiac Crystals Ltd.

Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal. 1. Method for crystal growth from a surfactant of a metal nonmetal (MN) compound , comprising the procedures of:providing a seed crystal;introducing atoms of a first metal to said seed crystal in order to form a thin liquid metal wetting layer on at least one surface of said seed crystal;setting a temperature of said seed crystal below a minimal temperature required for dissolving MN molecules in said thin liquid metal wetting layer and above a melting point of said first metal, each one of said MN molecules being formed from at least one atom of a second metal and at least one atom of a first nonmetal;introducing said MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of said thin liquid metal wetting layer between said MN surfactant monolayer and said at least one surface of said seed crystal; andregulating a thickness of said thin liquid metal wetting layer such that at least some of said MN molecules of said MN surfactant monolayer couple with said at least one surface of said seed crystal, thereby growing an epitaxial layer of said MN compound on said seed crystal.2. The ...

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Номер записи: 93
19-12-2013 дата публикации

DIAMOND GROWTH USING DIAMONDOIDS

Номер: US20130336873A1
Автор: Dahl Jeremy, Ishiwata Hitoshi, Melosh Nicholas A., Shen Zhi-Xun
Принадлежит:

Methods of growing diamond and resulting diamond nanoparticles and diamond films are described herein. An example of a method of growing diamond includes: (1) anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate; (2) forming a protective layer over the diamondoids; and (3) performing chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids. 1. A method of growing diamond , comprising:anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate;forming a protective layer over the diamondoids; andperforming chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids.2. The method of claim 1 , wherein anchoring the diamondoids to the substrate is performed via covalent bonding between the diamondoids and the substrate.3. The method of claim 1 , wherein the diamondoids are anchored to the substrate via at least one of —Si—O— linkages claim 1 , —P—O— linkages claim 1 , —C—O— linkages claim 1 , —S—O— linkages claim 1 , and —CO—O— linkages.4. The method of claim 1 , wherein the diamondoids are chemically functionalized to form covalent bonds with the substrate.5. The method of claim 1 , wherein the diamondoids are selected from at least one of thiol-functionalized diamondoids claim 1 , carboxy-functionalized diamondoids claim 1 , halo-functionalized diamondoids claim 1 , hydroxy-functionalized diamondoids claim 1 , cyano-functionalized diamondoids claim 1 , nitro-functionalized diamondoids claim 1 , amino-functionalized diamondoids claim 1 , silyl-functionalized diamondoids claim 1 , phosphoryl-functionalized diamondoids claim 1 , and sulfonic acid-functionalized diamondoids.6. The method of claim 1 , wherein anchoring the diamondoids to the substrate includes forming a monolayer of the diamondoids over the substrate claim 1 , and a seeding density of the diamondoids ...

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Номер записи: 94
26-12-2013 дата публикации

Semiconductor Device

Номер: US20130341633A1
Автор: Makoto Kiyama, Shinsuke Fujiwara, Takashi Sakurada, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S t /S, of collective area S t cm 2 of inversion domains to the total area S cm 2 of the GaN substrate principal face, of no more than 0.5, with the density along the (0001) Ga face of inversion domains whose surface area is 1 μm 2 or more being D cm −2 ; and an at least single-lamina semiconductor layer on the GaN substrate principal face, the semiconductor layer defining a semiconductor-device principal face; wherein the product S c ×D of the area S c of the semiconductor-device principal face and the inversion domain density D is less than 2.3.

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Номер записи: 95
26-12-2013 дата публикации

Solid state lighting devices without converter materials and associated methods of manufacturing

Номер: US20130342133A1
Автор: Thomas Gehrke, Zaiyuan Ren
Принадлежит: Micron Technology Inc

Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

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Номер записи: 96
02-01-2014 дата публикации

Method of purifying nanodiamond powder and purified nanodiamond powder

Номер: US20140004031A1
Автор: Alexander Ashton Miles, Jun Kato, Mamoru Miyawaki, Palash Gangopadhyay, Robert A. Norwood, Shabnam Virji-Khalfan
Принадлежит: Arizona Board of Regents of University of Arizona, Canon Inc

A method of purifying a nanodiamond powder includes preparing the nanodiamond powder, heating the nanodiamond powder at between 450° C. and 470° C. in an atmosphere including oxygen, performing a hydrochloric acid treatment on the heated nanodiamond powder, and performing a hydrofluoric acid treatment on the nanodiamond powder obtained after performing the hydrochloric acid treatment.

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Номер записи: 97
09-01-2014 дата публикации

Susceptor Device And Deposition Apparatus Having The Same

Номер: US20140007808A1
Автор: MORI Yoshinobu, Okabe Akira, Tanoguchi Masanori
Принадлежит: Epicrew Corporation

A susceptor device includes: a placement section on which a substrate is placed; a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; and lift pin moving means for moving the lift pin up and down. At the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, and the susceptor device further includes a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin. 1. A susceptor device comprising:a placement section on which a substrate is placed;a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; andlift pin moving means for moving the lift pin up and down,wherein at the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, andthe susceptor device further comprises a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin.2. The susceptor device according claim 1 , further comprising:placement section moving means for moving the placement section up and down,wherein the control section controls, during deposition of the substrate, the placement section moving means so as to ...

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Номер записи: 98
09-01-2014 дата публикации

SUSCEPTOR AND VAPOR-PHASE GROWTH APPARATUS

Номер: US20140007815A1
Автор: UCHIYAMA Kosuke, YAMAGUCHI Akira
Принадлежит:

The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and 1. A susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts , and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part , andthe susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.2. The susceptor according to claim 1 , wherein the notches are provided between the substrate mounting parts.3. The susceptor according to claim 1 , wherein the notches are provided at the outer periphery of the susceptor claim 1 , and a circular hole is provided in each notch provided at the outer periphery.4. A vapor-phase growth apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the susceptor according to .'}5. The vapor-phase growth apparatus with the susceptor according to claim 3 , wherein the vapor-phase growth apparatus has a susceptor cover provided on an upper surface of the susceptor claim 3 , and a thrust-up mechanism having a thrust-up rod provided below the susceptor to be insertable into the circular hole and movable up and down claim 3 , and the susceptor cover is able to be thrust up by the thrust-up rod. The present invention relates to a vapor-phase growth apparatus which supplies a vapor-phase raw material onto substrates while heating a plurality of rotating and revolving substrates, to thereby grow a thin film.Priority is claimed on Japanese Patent Application No. 2012-151967, filed on Jul. 6, 2012, the content of which is incorporated herein by reference.In an epitaxial growth method ...

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Номер записи: 99
16-01-2014 дата публикации

METHODS FOR PRODUCTION OF SINGLE-CRYSTAL GRAPHENES

Номер: US20140014030A1
Автор: Tour James M., Yan Zheng
Принадлежит: William Marsh Rice University

In some embodiments, the present disclosure pertains to methods of forming single-crystal graphenes by: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source to the surface of the catalyst; and (4) growing single-crystal graphene on the surface of the catalyst from the carbon source. Further embodiments of the present disclosure also include a step of separating the formed single-crystal graphene from the surface of the catalyst. In some embodiments, the methods of the present disclosure also include a step of transferring the formed single-crystal graphene to a substrate. Additional embodiments of the present disclosure also include a step of growing stacks of single crystals of graphene. 1. A method of forming single-crystal graphene , wherein the method comprises:cleaning a surface of a catalyst;annealing the surface of the catalyst;applying a carbon source to the surface of the catalyst; andgrowing single-crystal graphene on the surface of the catalyst.2. The method of claim 1 , wherein the catalyst is selected from the group consisting of Ni claim 1 , Co claim 1 , Fe claim 1 , Pt claim 1 , Au claim 1 , Al claim 1 , Cr claim 1 , Cu claim 1 , Mg claim 1 , Mn claim 1 , Mo claim 1 , Rh claim 1 , Si claim 1 , Ta claim 1 , Ti claim 1 , W claim 1 , U claim 1 , V and Zr claim 1 , mixtures thereof claim 1 , and combinations thereof.3. The method of claim 1 , wherein the catalyst is a copper foil.4. The method of claim 1 , wherein the catalyst is in polycrystalline form.5. The method of claim 1 , wherein the cleaning comprises electrochemical-polishing the surface of the catalyst.6. The method of claim 1 , wherein the annealing comprises thermal annealing.7. The method of claim 6 , wherein the thermal annealing occurs at temperatures of about 500° C. or higher.8. The method of claim 6 , wherein the thermal annealing occurs at pressures of about 1000 Torr or higher.9. The method of claim 6 , wherein the thermal ...

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Номер записи: 100