MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed

A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

PROCESS FOR PRODUCING HIGH QUALITY LARGE SIZE SILICON CARBIDE CRYSTALS

The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth. © KIPO & WIPO 2007 ...

Micropipe-free silicon carbide and related method of manufacture

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Low 1c screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm^-2.

Process for producing high quality large size silicon carbide crystals

The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.

Double side polished wafer scratch inspection tool

The invention is a method of inspecting a semiconductor wafer surface for scratches. The method includes positioning a semiconductor wafer for illumination by a radiation source and adjacent a background material that will absorb radiation from the radiation source, directing radiation at a surface of the wafer from the radiation source that has a wavelength that will be absorbed by the fundamental absorption of the wafer, filtering or otherwise limiting the radiation to allow only radiation having wavelengths that are absorbed by the fundamental absorption of the wafer to pass, and detecting radiation scattered on the surface of the wafer and filtered, by position, to thereby identify the location of the scratches on the surface of the wafer, while the absorption of the background material prevents other radiation from the source from interfering with the detection of the scratch-scattered radiation.

Low 1C screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm2.

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm ².

LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm^-2.

Low 1C screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm2 to about 2000 cm2.

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

One hundred millimeter SiC crystal grown on off-axis seed

A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer

A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm^-2, and a combined concentration of shallow level dopants less than 5E16 cm^-3.

Low 1c screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm^-2.

One hundred millimeter single crystal silicon carbide water

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Micropipe-free silicon carbide and related method of manufacture

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

One hundred millimeter single crystal silicon carbide wafer

A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsional forces from warping or bowing the seed crystal in a manner that that would otherwise encourage sublimation from the rear of the seed crystal or undesired thermal differences across the seed crystal.

Low 1c screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm −2 to about 2000 cm −2 .

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material. 131-. (canceled)32. A semiconductor wafer comprising:a micropipe-free silicon carbide (SiC) wafer sliced from a SiC crystal grown in the nominal c-axis direction without a-face growth, the SiC crystal having a micropipe density of zero, the SiC wafer comprising opposing first and second surfaces;an epitaxial layer formed on at least the first surface of the SiC substrate and comprising a concentration of dopant atoms defining a conductivity for the epitaxial layer; anda semiconductor device comprising source/drain regions formed in the epitaxial layer and defining a channel region in the epitaxial layer.33. The semiconductor wafer of claim 32 , further comprising: a gate dielectric layer formed on the channel region; anda metal gate structure formed on the gate dielectric layer over the channel region.34. The semiconductor wafer of claim 32 , wherein the semiconductor device comprises at least one of a junction field-effect transistor and a hetero-field effect transistor.35. The semiconductor wafer of claim 32 , wherein the SiC wafer has a minimum diameter selected from a group of diameters consisting of at least 2 inches claim 32 , at least 3 inches claim 32 , and at least 100 mm to 150 mm.36. A semiconductor ...

Dislocation distribution for silicon carbide crystalline materials

Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm 2 .

Micropipe-free silicon carbide and related method of manufacture

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Micropipe-free silicon carbide and related method of manufacture

A method of growing a single-crystal of semiconductor material in the nominal c-axis growth direction using a physical vapor transport (PVT) process in a sublimation system, wherein the crystal is completely free of micropipe defects is disclosed. The method comprises: attaching a seed material to a seed holder and forming a uniform thermal contact between the seed material and seed holder; placing a source material and the seed material attached to the seed holder in a reaction crucible, wherein constituent components of the sublimation system including at least the source material, the seed holder, and the reaction crucible are substantially free from unintentional impurities; and controlling growth temperature, growth pressure, sublimation flux and composition of the semiconductor material, and a temperature gradient between the source material and the seed material or the crystal growing on the seed material during the PVT process to eliminate micropipe-inducing process instabilities and grow the micropipe-free crystal on the seed material.

Ultrahigh vacuum method and apparatus

Ultrahigh vacuum method and apparatus

Mixed detergent composition