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Применить Всего найдено 5. Отображено 5.
30-01-2020 дата публикации

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

Номер: US20200035807A1
Принадлежит:

A device includes a substrate, a first zirconium-containing oxide layer, a first metal oxide layer and a top electrode. The first zirconium-containing oxide layer is over a substrate and having ferroelectricity or antiferroelectricity. The first metal oxide layer is in contact with the first zirconium-containing oxide layer. The first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer. The top electrode is over the first zirconium-containing oxide layer. 1. A device , comprising:a substrate;a first zirconium-containing oxide layer over a substrate and having ferroelectricity or antiferroelectricity;a first metal oxide layer in contact with the first zirconium-containing oxide layer, the first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer; anda top electrode over the first zirconium-containing oxide layer.2. The device of claim 1 , further comprising a second metal oxide layer claim 1 , wherein the first zirconium-containing oxide layer is between the first metal oxide layer and the second metal oxide layer.3. The device of claim 2 , wherein the second metal oxide layer has a thickness less than the thickness of the first zirconium-containing oxide layer.4. The device of claim 2 , wherein the first metal oxide layer and the second metal oxide layer are made of the same material.5. The device of claim 1 , further comprising:a second zirconium-containing oxide layer over the first zirconium-containing oxide layer; anda second metal oxide layer in contact with the second zirconium-containing oxide layer.6. The device of claim 5 , wherein the second metal oxide layer has a thickness less than a thickness of the second zirconium-containing oxide layer.7. The device of claim 5 , further comprising a third metal oxide layer claim 5 , wherein the second zirconium-containing oxide layer is between the second metal oxide layer and the third metal oxide layer.8. The device ...

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24-08-2021 дата публикации

Semiconductor device and forming method thereof

Номер: US11101362B2

A device includes a substrate, a first zirconium-containing oxide layer, a first metal oxide layer and a top electrode. The first zirconium-containing oxide layer is over a substrate and having ferroelectricity or antiferroelectricity. The first metal oxide layer is in contact with the first zirconium-containing oxide layer. The first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer. The top electrode is over the first zirconium-containing oxide layer.

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21-11-2023 дата публикации

Methods and devices for graphene formation on flexible substrates by plasma-enhanced chemical vapor deposition

Номер: US11823895B2

A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.

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26-12-2023 дата публикации

Semiconductor device and forming method thereof

Номер: US11855171B2

A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.

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14-03-2024 дата публикации

Semiconductor device and forming method thereof

Номер: US20240088255A1

A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.

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