InGaN film with small band gap and preparation method thereof

An InGaN film with a small band gap with the chemical formula InxGa1-xN, wherein x is between 0.3 and 0.8, consists of a substrate and a layer of InGaN film formed on the surface of the substrate, and the thickness of the InGaN film is 0.2-0.6 mu m. The preparation method comprises the following steps: plasma cleaning the surface of the substrate in a sample chamber of MOCVD deposition system, then depositing a layer of InGaN film on the surface of the substrate by using magnetron sputtering technique in a deposition chamber of MOCVD deposition system. The InGaN film with small band gap can provide an almost perfect match band gap corresponding to solar spectrum, offering the possibility of designing and preparing high efficiency multijunction solar cell by using single semi conducting material, with the advantages of high absorption coefficient, high carrier mobility and high resistance to radiation. The preparation method is easy to operate and favorable to the large-scale application ...