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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 23. Отображено 23.
05-06-2013 дата публикации

Surface acoustic wave device of multilayer film structure and preparation method thereof

Номер: CN103138702A
Автор: Chen Ximing, Li Fulong, Xue Yuming, Zhu Yuqing, Zhang Qian, Yin Juqian, Guo Yan, Sun Lianjie
Принадлежит:

A surface acoustic wave device of a multilayer film structure comprises a CVD diamond film, an a-AlN film of axle a preferred orientation, a c-BN film of axle c preferred orientation and an interdigital transducer (IDT) in a successive superposition mode to form a diamond-complex film structure, wherein the thickness of the CVD diamond film is 20-25 micrometers, the thickness of the a-AlN film is 300-500nm, the thickness of the c-BN film is 300-500nm, the thickness of the IDT is 100nm, and the IDT is an aluminium film. The surface acoustic wave device of the multilayer film structure has the advantages that hardness and sound velocity of the diamond are high, high sound velocity of the a-AlN can effectively relieve a sound velocity frequency dispersion effect caused by big difference of the sound velocity between the diamond and the c-BN and a high electromechanical coupling coefficient of the c-BN. The surface acoustic wave device of the multilayer film structure can be used for manufacturing ...

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Номер записи: 1
18-09-2013 дата публикации

Copper-indium-gallium-selenium solar battery device and preparation method thereof

Номер: CN103311357A
Автор: Xue Yuming, Zhang Jiawei, Xu Nan, Li Wei, Zhao Yanmin, Qiao Zaixiang, Liu Hao, Feng Shaojun, Yin Fuhong, Liu Jun, Li Penghai, Song Dianyou, Zhu Yadong, Pan Honggang
Принадлежит:

A copper-indium-gallium-selenium solar battery device is a copper-indium-gallium-selenium solar battery based on a composite polyimide film-soda glass substrate. The copper-indium-gallium-selenium solar battery device comprises glass, polyimide, a molybdenum back contact layer, a copper-indium-gallium-selenium absorption layer, a cadmium sulfide buffer layer, a transparent-window-layer high-resistance intrinsic zinc oxide thin film, a transparent-window-layer low-resistance aluminum zinc oxide thin film and an aluminized electrode which are in a laminated structure. A preparation method of the copper-indium-gallium-selenium solar battery device includes: coating polyimide glue on the surface of the glass, curing to form the composite polyimide film-soda glass substrate, sequentially preparing the thin films for every layer on the surface of the composite polyimide film-soda glass substrate, and separating the copper-indium-gallium-selenium solar battery which is fully prepared from a soda ...

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Номер записи: 2
29-07-2015 дата публикации

Copper zinc tin selenium solar cell device and preparing method thereof

Номер: CN104810419A
Автор: Xue Yuming, Feng Shaojun, Hang Wei, Gao Lin, Li Pengyu, Sun Haitao, Zhang Ao, Zhou Yuexin, Zhao Zizhen, Chen Guoxian, Li Guanying, Lu Mengwei, Xia Yu, Peng Yuehao
Принадлежит:

Disclosed is a copper zinc tin selenium solar cell device based on a polyimide film and soda glass composite substrate. The device comprises glass, polyimide, a molybdenum back contact layer, a copper zinc tin selenium absorbing layer, a cadmium sulfide buffering layer, a transparent window layer high resistance eigen zinc oxide film, a transparent window layer low resistance eigen zinc oxide film and an aluminum electrode which form a stacked structure. A preparing method includes firstly coating the polyimide on the surface of the glass, solidifying and obtaining the polyimide film and soda glass composite substrate, preparing the films on the surface of the substrate sequentially, separating a cell body from the soda glass substrate after complete preparation, and obtaining the soft copper zinc tin selenium solar cell device based on the polyimide film and soda glass composite substrate. The device has the advantages that the grains of the copper zinc tin selenium film based on the polyimide ...

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Номер записи: 3
18-09-2013 дата публикации

Copper indium gallium selenide film based on composite substrate and preparation method thereof

Номер: CN103311329A
Автор: Xue Yuming, Zhang Jiawei, Qiao Zaixiang, Zhao Yanmin, Li Wei, Xu Nan, Pan Honggang, Song Dianyou, Li Penghai, Liu Jun, Zhu Yadong, Yin Fuhong, Liu Hao, Feng Shaojun
Принадлежит:

The invention provides a copper indium gallium selenide film based on composite substrate. The copper indium gallium selenide film is based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide and a sodium copper indium gallium selenide absorbing layer and forms a laminate structure. The substrate is composed of soda glass and a polyimide film generated on the surface of the soda glass. A preparation method includes firstly coating polyimide adhesive on the surface of soda glass, curing to form the polyimide film-soda glass composite substrate, and then preparing the copper indium gallium selenide film on the surface of the polyimide film-soda glass composite substrate. The copper indium gallium selenide film has the advantages of excellent adhesion, good crystal quality, large grain, and fewer defects, and preparation of flexible solar cells by utilizing rigidity substrates can be realized; the preparation method is simple and easy to implement, and large ...

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Номер записи: 4
12-06-2013 дата публикации

Electronic type gallium nitride (n-GaN) thin film and preparation method thereof

Номер: CN103147064A
Автор: Xue Yuming, Song Dianyou, Pan Honggang, Zhu Yadong, Liu Jun, Yin Fuhong, Xin Zhijun, Feng Shaojun, Yin Zhenchao, Zhang Jiawei, Liu Hao
Принадлежит:

The invention discloses an electronic type gallium nitride (n-GaN) thin film, wherein the chemical molecular formula of gallium nitride is GaN; the conduction type is n, namely Si-doped electronic type; and the thickness is 0.6-1 micron. A preparation method of the thin film comprises the following steps of: plasma cleaning on the surface of a substrate in a sample introduction chamber of an MOCVD (Metal Organic Chemical Vapor Deposition) system; and then depositing a Si-doped gallium nitride thin film on the surface of the substrate by adopting an MOCVD technology in a deposition chamber. The advantages are as follows: the electronic type gallium nitride (n-GaN) thin film has an almost-perfect matching band gap corresponding to solar spectrum and is high in absorption coefficient, carrier mobility and radiation resisting capability; the electronic type gallium nitride (n-GaN) thin film is used as a window layer of an indium gallium nitride (InxGa1-Xn) thin film solar cell and therefore ...

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Номер записи: 5
08-05-2013 дата публикации

Preferred orientation AIN piezoelectric film and preparation method thereof

Номер: CN103095244A
Автор: Chen Ximing, Li Fulong, Xue Yuming, Zhu Yuqing, Zhang Qian, Yin Juqian, Guo Yan, Sun Lianjie
Принадлежит:

A preferred orientation AIN piezoelectric film is formed by superposition of a CVD diamond substrate and an a-axis preferred orientation AIN film, wherein the thickness of the CVD diamond substrate is 20-25 micrometers, surface roughness of the CVD diamond substrate is lower than 5 nanometers, and the thickness of the a-axis preferred orientation AIN film is 60-80 nanometers. The preparation method of the preferred orientation AIN piezoelectric film includes that the cleaned CVD diamond substrate is conveyed to a radio frequency magnetic control sputtering chamber to be vacuumized to achieve N2 treatment, the axis preferred orientation AIN film is deposited on the surface of the substrate, then in-situ N2 annealing treatment is achieved, the deposition treatment and the annealing treatment are alternately and repeatedly achieved until the thickness of the axis preferred orientation AIN film reaches 300-500 nanometers. The preferred orientation AIN piezoelectric film and the preparation ...

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Номер записи: 6
06-02-2013 дата публикации

Fourier domain mode locking optical fiber laser device

Номер: CN102916329A
Автор: Pan Honggang, Xue Yuming, Zhang Ailing, Ren Guangjun, Song Dianyou
Принадлежит:

The invention provides a Fourier domain mode locking optical fiber laser device, which is composed of a closed circuit and a signal generator, wherein the closed circuit is formed by connecting an erbium-doped optical fiber amplifier, a high-nonlinearity optical fiber, a chromatic dispersion displacement optical fiber, a polarization controller, a chromatic dispersion compensation optical fiber, an optical isolator, an optical coupler and a tunable Fabry-Perot filter in series through an optical fiber; the tunable Fabry-Perot filter is provided with three ports; a port e is connected with the signal processor; an input port a of the optical coupler is connected with an output port of the optical isolator; the output port is provided with ports b and c; an output light power ratio of the port b and the port c is 20: 80; and 80% of the port c is connected into a laser device chamber and is connected with a port d of the tunable Fabry-Perot filter, and 20% of the port b is used as an output ...

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Номер записи: 7
18-09-2013 дата публикации

Copper-indium-gallium-selenium solar battery device and preparation method thereof

Номер: CN103311322A
Автор: Xue Yuming, Zhang Jiawei, Xu Nan, Qiao Zaixiang, Zhao Yanmin, Li Wei, Yin Fuhong, Liu Hao, Feng Shaojun, Song Dianyou, Pan Honggang, Li Penghai, Liu Jun, Zhu Yadong
Принадлежит:

A copper-indium-gallium-selenium solar battery device is a copper-indium-gallium-selenium solar battery based on a composite polyimide film-soda glass substrate. The copper-indium-gallium-selenium solar battery device comprises glass, polyimide, a molybdenum back contact layer, a copper-indium-gallium-selenium absorption layer, a cadmium sulfide buffer layer, a transparent-window-layer high-resistance intrinsic zinc oxide thin film, a transparent-window-layer low-resistance aluminum zinc oxide thin film and an aluminized electrode which are in a laminated structure. A preparation method of the copper-indium-gallium-selenium solar battery device includes: coating polyimide glue on the surface of the glass, curing to form the composite polyimide film-soda glass substrate, sequentially preparing the thin films for every layer on the surface of the composite polyimide film-soda glass substrate, and separating the copper-indium-gallium-selenium solar battery which is fully prepared from a soda ...

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Номер записи: 8
25-09-2013 дата публикации

Copper indium gallium selenium solar battery device and manufacturing method thereof

Номер: CN103325868A
Автор: Xue Yuming, Zhang Jiawei, Qiao Zaixiang, Li Wei, Zhao Yanmin, Xu Nan, Liu Hao, Yin Fuhong, Feng Shaojun, Pan Honggang, Song Dianyou, Zhu Yadong, Liu Jun, Li Penghai
Принадлежит:

The invention discloses a copper indium gallium selenium solar battery device which is a copper indium gallium selenium solar battery based on a polyimide-film-soda-glass composite substrate. The copper indium gallium selenium solar battery device is composed of glass, polyimide, a molybdenum back contact layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffering layer, a transparent window layer high-resistance intrinsic zinc oxide film, a transparent window layer low-resistance zinc oxide aluminum film and an upper aluminum electrode, and is of a laminated structure. The manufacturing method of the copper indium gallium selenium solar battery device includes the steps of, firstly, coating the surface of the glass through polyimide glue, solidifying to form the polyimide-film-soda-glass composite substrate, then sequentially manufacturing the various films on the surface of the polyimide-film-soda-glass composite substrate, separating the copper indium gallium ...

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Номер записи: 9
25-09-2013 дата публикации

Polyimide film-soda glass composite substrate and preparation method thereof

Номер: CN103325847A
Автор: Xue Yuming, Zhang Jiawei, Song Dianyou, Pan Honggang, Liu Jun, Zhu Yadong, Yin Zhenchao, Feng Shaojun, Xin Zhijun, Yin Fuhong, Liu Hao
Принадлежит:

A polyimide film-soda glass composite substrate is formed by soda glass and a polyimide film growing on the surface of the soda glass, wherein the thickness of the soda glass is 1.5-2mm, and the thickness of the polyimide film is 25-30 micrometers. The preparation method of the polyimide film-soda glass composite substrate includes that polyimide glue coats the surface of the soda glass, and after glue evening and curing processes, the polyimide film-soda glass composite substrate is obtained. The polyimide film-soda glass composite substrate and the preparation method have the advantages that the polyimide film-soda glass composite substrate and copper indium gallium selenium absorption layer have almost perfectly matched heat expansion coefficients, after a complete copper indium gallium selenium solar cell is prepared, the copper indium gallium selenium solar cell is separated from the soda glass, the flexible copper indium gallium selenium solar cell making the polyimide film as a substrate ...

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Номер записи: 10
27-02-2013 дата публикации

Electronic Indium Gallium Nitride n-InxGal-xN thin film and preparation thereof

Номер: CN102943248A
Автор: Xue Yuming, Pan Honggang, Song Dianyou, Zhu Yadong, Liu Jun, Xin Zhijun, Feng Shaojun, Yin Zhenchao, Zhang Jiawei, Liu Hao, Yin Fuhong
Принадлежит:

The invention relates to an electronic Indium Gallium Nitride n-InxGal-xN thin film which has a chemical formula of InxGal-xN, wherein in the formula, x is in the range of 0.05 to 0.3; the conduction type is the n type, i.e. the Si-doped electronic type; and the thin film has a thickness of 0.6 to 1.5mum. A preparation method of the electronic Indium Gallium Nitride n-InxGal-xN thin film comprises the following steps of: in a sample feeding chamber of an MOCVD (Metal Organic Chemical Vapor Deposition) system, carrying out plasma cleaning on the surface of a substrate; and then in a deposition chamber of the MOCVD system, depositing the Si-doped n-InxGal-xN thin film on the surface of the substrate by adopting an MOCVD process. The electronic Indium Gallium Nitride n-InxGal-xN thin film has the advantages that corresponding to a solar spectrum, the electronic Indium Gallium Nitride n-InxGal-xN thin film has a nearly perfect matched band gap; the possibility is provided for utilizing a single ...

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Номер записи: 11
09-10-2013 дата публикации

Copper indium gallium selenium solar battery device and preparing method thereof

Номер: CN103346194A
Автор: Xue Yuming, Zhang Jiawei, Zhao Yanmin, Qiao Zaixiang, Li Wei, Xu Nan, Feng Shaojun, Liu Hao, Yin Fuhong, Zhu Yadong, Pan Honggang, Song Dianyou, Li Penghai, Liu Jun
Принадлежит:

A copper indium gallium selenium solar battery device is a copper indium gallium selenium solar battery based on a polyimide film-soda glass recombination substrate. The copper indium gallium selenium solar battery device is composed of glass, polyimide, a molybdenum back contacting layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffering layer, a transparent window layer high resistance eigen zinc oxide thin film, a transparent window low resistance zinc oxide aluminum thin film and an aluminum top electrode, and a lamination structure is formed. A preparing method comprises the first step of coating the surface of the glass by polyimide gum, wherein the polyimide film-soda glass recombination substrate is formed in a solidifying mode, the second step of preparing all thin films on the surface of the polyimide film-soda glass recombination substrate sequentially, and the third step of separating the complete copper indium gallium selenium solar battery and the ...

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Номер записи: 12
18-09-2013 дата публикации

Copper indium gallium selenide film based on composite substrate and preparation method thereof

Номер: CN103311328A
Автор: Xue Yuming, Zhang Jiawei, Qiao Zaixiang, Li Wei, Xu Nan, Zhao Yanmin, Liu Jun, Pan Honggang, Song Dianyou, Li Penghai, Zhu Yadong, Yin Fuhong, Feng Shaojun, Liu Hao
Принадлежит:

The invention provides a copper indium gallium selenide film based on composite substrate. The copper indium gallium selenide film is based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide and a sodium copper indium gallium selenide absorbing layer and forms a laminate structure. The substrate is composed of soda glass and a polyimide film generated on the surface of the soda glass. A preparation method includes firstly coating polyimide adhesive on the surface of soda glass, curing to form the polyimide film-soda glass composite substrate, and then preparing the copper indium gallium selenide film on the surface of the polyimide film-soda glass composite substrate. The copper indium gallium selenide film has the advantages of excellent adhesion, good crystal quality, large grain, and fewer defects, and preparation of flexible solar cells by utilizing rigidity substrates can be realized; the preparation method is simple and easy to implement, and large ...

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Номер записи: 13
05-10-2011 дата публикации

InGaN film with small band gap and preparation method thereof

Номер: CN102206811A
Автор: Xue Yuming, Song Dianyou, Zhu Yadong, Wang Jinfei, Zhou Kai, Li Shiliang, Wang Zihan, Pei Tao, Wang Yi, Niu Weikai, Lan Yingjie
Принадлежит:

An InGaN film with a small band gap with the chemical formula InxGa1-xN, wherein x is between 0.3 and 0.8, consists of a substrate and a layer of InGaN film formed on the surface of the substrate, and the thickness of the InGaN film is 0.2-0.6 mu m. The preparation method comprises the following steps: plasma cleaning the surface of the substrate in a sample chamber of MOCVD deposition system, then depositing a layer of InGaN film on the surface of the substrate by using magnetron sputtering technique in a deposition chamber of MOCVD deposition system. The InGaN film with small band gap can provide an almost perfect match band gap corresponding to solar spectrum, offering the possibility of designing and preparing high efficiency multijunction solar cell by using single semi conducting material, with the advantages of high absorption coefficient, high carrier mobility and high resistance to radiation. The preparation method is easy to operate and favorable to the large-scale application ...

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Номер записи: 14
05-10-2011 дата публикации

InGaN thin film with larger band gap and preparation method thereof

Номер: CN102206812A
Автор: Xue Yuming, Song Dianyou, Zhu Yadong, Pei Tao, Wang Zihan, Wang Yi, Niu Weikai, Wang Jinfei, Zhou Kai, Li Shiliang, Jiang Shubo, Yang Xing
Принадлежит:

The invention relates to an InGaN thin film with a larger band gap. The InGaN thin film has a chemical molecular formula of InxGa1-xN, wherein x ranges from 0.05 to 0.3. The InGaN thin film comprises a substrate and an InGaN thin film layer formed on the surface of the substrate, wherein the thickness of the InGaN thin film ranges from 0.6 to 1.5mu m. The preparation method comprises the following steps of: firstly, carrying out surface plasma cleaning on the surface of the substrate in a sample introduction chamber of an MOCVD (Metal-organic Chemical Vapor Deposition) deposition system; and then, depositing the InGaN thin film layer on the surface of the substrate by adopting a magnetron sputtering technology in the deposition chamber of the MOCVD deposition system. The invention has the advantages that the InGaN thin film with the larger band gap provides an almost perfect matching band gap corresponding to solar spectrum, makes design and preparation of more effective multijunction solar ...

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Номер записи: 15
18-09-2013 дата публикации

Copper indium gallium selenide film with sodium doped based on composite substrate and preparation method thereof

Номер: CN103311330A
Автор: Xue Yuming, Zhang Jiawei, Qiao Zaixiang, Li Wei, Xu Nan, Zhao Yanmin, Li Penghai, Zhu Yadong, Liu Jun, Song Dianyou, Pan Honggang, Feng Shaojun, Liu Hao, Yin Fuhong
Принадлежит:

The invention provides a copper indium gallium selenide film with sodium doped based on composite substrate. The copper indium gallium selenide film with the sodium doped is based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide and a sodium copper indium gallium selenide absorbing layer and forms a laminate structure. A preparation method thereof includes firstly coating polyimide adhesive on the surface of soda glass, curing to form the polyimide film-soda glass composite substrate, preparing a layer of a ultrathin sodium fluoride preset-layer film on the surface of the polyimide film-soda glass composite substrate, and preparing the copper indium gallium selenide film on the layer of the ultrathin sodium fluoride preset-layer film. The copper indium gallium selenide film with the sodium doped has the advantages of excellent adhesion, good crystal quality, large grain, and fewer defects, and preparation of flexible solar cells by utilizing rigidity substrates ...

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Номер записи: 16
25-09-2013 дата публикации

Copper indium gallium selenium thin film based on composite substrate and preparation method thereof

Номер: CN103325867A
Автор: Xue Yuming, Zhang Jiawei, Xu Nan, Zhao Yanmin, Qiao Zaixiang, Li Wei, Song Dianyou, Liu Jun, Zhu Yadong, Pan Honggang, Li Penghai, Feng Shaojun, Yin Fuhong, Liu Hao
Принадлежит:

The invention relates to a copper indium gallium selenium thin film based on a composite substrate. The copper indium gallium selenium thin film is based on the polyimide film-soda glass composite substrate, the copper indium gallium selenium thin film is composed of glass, polyimide and a copper indium gallium selenium absorbing layer thin film and is of a laminated structure, and the substrate is formed by soda glass and a polyimide film growing on the surface of the soda glass. A preparation method comprises the steps of coating the surface of the soda glass firstly with polyimide glue, solidifying the polyimide glue to form the polyimide film-soda glass composite substrate, and then preparing the copper indium gallium selenium thin film on the surface of the polyimide film-soda glass composite substrate. The copper indium gallium selenium thin film based on the polyimide film-soda glass composite substrate has the advantages of being excellent in adhesiveness, good in crystal quality ...

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Номер записи: 17
30-01-2013 дата публикации

Hole type nitrogen-indium-gallium p-InxGa1-xN film and preparation thereof

Номер: CN102899634A
Автор: Xue Yuming, Song Dianyou, Pan Honggang, Zhu Yadong, Liu Jun, Yin Zhenchao, Xin Zhijun, Feng Shaojun, Zhang Jiawei, Liu Hao, Yin Fuhong
Принадлежит:

The invention relates to a hole type nitrogen-indium-gallium p-InxGa1-xN film, with a chemical formula of InxGa1-xN, wherein x is 0.3-0.8, the conduction type is p type, namely Mg-doped hole type, and the thickness of the film is 0.2-0.6 mu m. A preparation method of the hole type nitrogen-indium-gallium p-InxGa1-xN film comprises the following steps: firstly carrying out surface plasma cleaning for the surface of a substrate in a sampling chamber of an MOCVD (Metalorganic Chemical Vapor Deposition) system, and then depositing a layer of Mg-doped InxGa1-xN film on the surface of the substrate by adopting an MOCVD process in a deposition chamber of the MOCVD system. The invention has the advantages that the hole type InxGa1-xN film has an almost perfect matching band gap corresponding to a solar spectrum, is high in absorption coefficient, carrier mobility and radiation resistance, and provides the possibility of designing and preparing more efficient multi-junction solar cells by utilizing ...

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Номер записи: 18
27-02-2013 дата публикации

Cavity-type nitrogen-indium-gallium p-InxGal-xN thin film and preparation thereof

Номер: CN102943249A
Автор: Xue Yuming, Zhu Yadong, Pan Honggang, Song Dianyou, Liu Jun, Zhang Jiawei, Xin Zhijun, Yin Zhenchao, Yin Fuhong, Liu Hao, Feng Shaojun
Принадлежит:

The invention relates to a cavity-type nitrogen-indium-gallium p-InxGal-xN thin film. The chemical formula of the cavity-type nitrogen-indium-gallium p-InxGal-xN thin film is InxGal-xN, wherein x is 0.3-0.8. The cavity-type nitrogen-indium-gallium p-InxGal-xN thin film has an inverted-n-shaped surface layer, the thickness of the cavity-type nitrogen-indium-gallium p-InxGal-xN thin film is 0.2-0.6 mu m, and the thickness of the surface layer is 20-30nm. The preparation method of the cavity-type nitrogen-indium-gallium p-InxGal-xN thin film comprises the following steps of: in a sampling chamber of an MOCVD (metal-organic chemical vapor deposition) system, performing surface plasma cleaning for the surface of a substrate, adopting a two-step method to deposit Mg-doped Mg p-InxGal-xN thin film with the inverted-n-shaped surface layer on the surface of the substrate. The invention has the advantages that the cavity-type nitrogen-indium-gallium p-InxGal-xN thin film has mostly perfect matching ...

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Номер записи: 19
11-09-2013 дата публикации

Copper indium gallium selenium solar battery device and production method thereof

Номер: CN103296092A
Автор: Xue Yuming, Zhang Jiawei, Li Wei, Qiao Zaixiang, Xu Nan, Zhao Yanmin, Liu Jun, Song Dianyou, Zhu Yadong, Pan Honggang, Li Penghai, Liu Hao, Feng Shaojun, Yin Fuhong
Принадлежит:

A copper indium gallium selenium solar battery device is a copper indium gallium selenium solar battery based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide, a molybdenum back contact layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffer layer, a transparence window layer high resistance intrinsic zinc oxide thin film, a transparence window layer low resistance zinc aluminium oxide thin film and an aluminum top electrode and forms a laminated structure. The production method of the copper indium gallium selenium solar battery device includes that polyimide glue is applied to the glass surface to be cured to form the polyimide film-soda glass composite substrate, all layers of thin films are prepared sequentially on the surface of the polyimide film-soda glass composite substrate, and the complete copper indium gallium selenium solar battery is separated from the soda glass substrate after the complete copper indium gallium ...

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Номер записи: 20
18-09-2013 дата публикации

Copper indium gallium selenide film based on polyimide film-soda glass composite substrate

Номер: CN103311321A
Автор: Xue Yuming, Zhang Jiawei, Pan Honggang, Song Dianyou, Zhu Yadong, Liu Jun, Xin Zhijun, Feng Shaojun, Yin Zhenchao, Liu Hao, Yin Fuhong
Принадлежит:

The invention discloses a copper indium gallium selenide film based on a polyimide film-soda glass composite substrate. The substrate is composed of soda glass and a polyimide film generated on the surface of the soda glass. The thickness of the soda glass ranges from 1.5 to 2mm, and the thickness of the polyimide film ranges from 25 to 30 micrometer. The chemical formula of the copper indium gallium selenide film generated on the surface of the composite substrate is CuIn1-xGaxSe2, x ranges from 0.25 to 0.35, and conductivity type is a p type. The copper indium gallium selenide film CuIn1-xGaxSe2 is deposited on the surface of the polyimide film-soda glass composite substrate, and is 1.5 to 2 micrometer in thickness. The copper indium gallium selenide film has the advantages of excellent adhesion, good crystal quality, large grain, and fewer defects, and preparation of flexible solar cells by utilizing rigidity substrates can be realized; the preparation method is simple and easy to implement ...

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Номер записи: 21
12-06-2013 дата публикации

Gallium nitride film for solar cell window layer and preparation method thereof

Номер: CN103147065A
Автор: Xue Yuming, Liu Jun, Pan Honggang, Song Dianyou, Zhu Yadong, Liu Hao, Xin Zhijun, Feng Shaojun, Yin Zhenchao, Zhang Jiawei, Yin Fuhong
Принадлежит:

The invention relates to a gallium nitride film for a solar cell window layer, wherein the chemical molecular formula of the gallium nitride film is GaN; an indium gallium nitride film is deposited on a substrate; and the thickness of the film is 0.6-1 mu m. A preparation method disclosed by the invention comprises the following steps of: carrying out surface plasma cleaning of the surface of the substrate in a sampling chamber of an MOCVD (Metal Organic Chemical Vapour Deposition) deposition system, and then, depositing a layer of gallium nitride film on the surface of the substrate by adopting an MOCVD process in a deposition chamber of the MOCVD deposition system. The gallium nitride film for the solar cell window layer and the preparation method thereof disclosed by the invention have the advantages that the gallium nitride GaN film has an almost perfect matching band gap corresponding to solar spectrum and has the advantages of being high in absorption coefficient, high in carrier ...

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Номер записи: 22
11-09-2013 дата публикации

Sodium doped copper indium gallium selenium film based on composite substrate and preparation method thereof

Номер: CN103296091A
Автор: Xue Yuming, Zhang Jiawei, Qiao Zaixiang, Li Wei, Xu Nan, Zhao Yanmin, Zhu Yadong, Liu Jun, Song Dianyou, Pan Honggang, Li Penghai, Feng Shaojun, Liu Hao, Yin Fuhong
Принадлежит:

A sodium doped copper indium gallium selenium film based on a composite substrate is based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide and a copper indium gallium selenium absorbing layer film and forms a laminated structure. A preparation method of the sodium doped copper indium gallium selenium film comprises the steps of first enabling polyimide glue to be coated on the surface of the soda glass, forming the polyimide film-soda glass composite substrate by solidification, then preparing a layer of extremely thin sodium fluoride preset layer film on the surface of the polyimide film-soda glass composite substrate, and then preparing a copper indium gallium selenium film on the sodium fluoride preset layer film. The sodium doped copper indium gallium selenium film based on the composite substrate and the preparation method of the sodium doped copper indium gallium selenium film have the advantages that the sodium doped copper indium gallium selenium ...

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