Limiting device of torsional damper of clutch driven disc for heavy vehicle

The invention discloses a limiting device of a torsional damper of a clutch driven disc for a heavy vehicle. The limiting device comprises an upper cover plate, a lower cover plate, an inner disc hub, an outer disc hub, a damping spring and limiting pins. The upper cover plate and the lower cover plate are respectively provided with six concentric circular holes, six oblong holes are arranged on the outer disc hub, the center of the oblong holes is coincided with the center of the six circular holes on the upper cover plate and the center of the six circular holes on the lower cover plate, the limiting pins penetrate through the oblong holes of the outer disc hub to be mounted in a concentric circle between the upper cover plate and the lower cover plate, and each limiting pin is of a step structure with a thicker middle and two thinner ends. Torsion damping and limiting effects are realized by turning the limiting pins on the oblong holes of the outer disc hub, extract impact higher than ...

Copper plastic composite strap suitable for telecommunication cable and optical cable and preparation method of copper plastic composite strap

The invention relates to the field of cable straps, in particular to a copper plastic composite strap suitable for a telecommunication cable and an optical cable and a copper plastic composite strap preparation method. The copper plastic composite strap is wrapped on the outer surface of the telecommunication cable or the optical cable. The copper plastic composite strap is provided with a red copper layer (1), an adhesive layer (2) and a polyester film layer (3) in sequence. The red copper layer (1), the adhesive layer (2) and the polyester film layer (3) are attached together through bonding and heating to form a composite structure. The tensile strength of the copper plastic composite strap is larger than or equal to 180 MPa. The breakage elongation of the copper plastic composite strap is larger than or equal to 15%. The interlaminar peeling strength between a copper strap and a plastic layer is larger than or equal to 15N/centimeter. The conductivity of the copper plastic composite ...

Automatic plating component feeding system

The invention discloses an automatic plating component feeding system which is characterized in that a pipeline is connected between a liquid groove and a plating liquid groove, wherein a control valve, a water pump, a flowmeter and a flow control system are sequentially arranged on the pipeline; and leads are arranged among the control valve, the flowmeter and the flow control system. Due to the arrangement, various plating components are automatically quantitatively fed to the plating liquid groove at regular time, the stable addition of the plating liquid components is ensured, and the quality of a plating layer of a steel wire is improved.

structure and method for conductive connection between copper materials or between copper material and other components

The invention relates to a connection technology between copper materials or between a copper material and other components, in particular to a structure and method for conductive connection between copper materials or between a copper material and other components. A multi-layer copper foil flexible connection structure is connected between the copper materials or between the copper material and other components, the copper foil flexible connection structure is a multi-layer structure formed by superposing wave-shaped or snake-shaped or unfolded spiral copper foil strips, the middle wave-shaped or snake-shaped or unfolded spiral copper foil strips are in a free layering state, and two ends of the wave-shaped or snake-shaped or unfolded spiral copper foil strips of the multi-layer structure are directly connected to the copper materials or other components. The structure and method for conductive connection disclosed by the invention solve the problems of unsatisfactory conductive performance ...

Asymmetric synthesis method of 2-amino-4H-benzopyran compound

The invention discloses an asymmetric synthesis method of 2-amino-4H-benzopyran compound. Raw materials comprising 2-imine-benzopyran compound and nitroaromatic hydrocarbon compound react with each other under effect of a chiral organic catalyst in a reaction solvent to obtain the 2-amino-4H-benzopyran compound. The method provided by the invention has advantages of mild reaction conditions, cheap and easily available raw materials, and high ee value of the product, provides a critical framework structure for synthesis of a plurality of natural products and drugs, and can be widely used in industrial mass production.

Opportunistic mobile receive diversity (OMRD) in a dual-SIM dual-active (DSDA) device

Methods and devices are disclosed for implementing opportunistic mobile receive diversity (“OMRD”) on a multi-SIM wireless device. The wireless device may receive a request from a protocol stack associated with the first SIM to utilize the second RF resource for receive diversity, and determine whether a protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM. Upon determining that the protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM, the wireless device may grant control of the second RF resource to the protocol stack associated with the first SIM. Granting control may provide, to the protocol stack associated with the first SIM, a capability to enable and disable receive diversity using the first and second RF resources.

Cylinder end plate installing and welding workstation

The invention provides a cylinder end plate installing and welding workstation. The workstation comprises overturning positioners, end plate clamps, a three-shaft sliding table, a welding robot, a main roller carrier, a secondary roller carrier, an electric control system, a hydraulic system and an operation platform, the two sides of the workstation are each provided with the overturning positioner and the end plate clamp, the three-shaft sliding table is arranged between the two overturning positioners, the welding robot is arranged on the three-shaft sliding table, the workstation is further provided with a guide rail, the main roller carrier and the secondary roller carrier are arranged below the three-shaft sliding table and capable of moving along the guide rail, the electric control system, the hydraulic system and the operation platform are communicated with one another through electric signals, and the hydraulic system is connected with the overturning positioners and the end plate ...

Medicine composition for treating dyspepsia

The invention discloses a medicine composition for treating dyspepsia, comprising ginseng, chicken's gizzard-membrane, seabuckthorn, phyllanthus emblica, and liquorice. The medicine composition disclosed herein can strengthen spleen and stomach, promote digestion, help digestion and stop diarrhea, and especially can treat appetite decreases, dyspepsia caused by yin deficiency of spleen and stomach, and the curative effect is exact.

Automatic bean product slicer

The invention discloses an automatic bean product slicer, comprising a conveyor belt and multiple molds fixed on the conveyor belt; a horizontal die cutting device and a longitudinal die cutting device are arranged above the conveyor belt; the horizontal die cutting device comprises a bottom plate; a movable support plate capable of moving up and down is fixed below the bottom plate by a guide post; a first transmission screw is fixedly connected below the movable support plate; the transmission screw is provided with a cutting knife shaft capable of horizontally moving along the transmission screw. Horizontal and longitudinal cutting knives are arranged above the conveyor belt, when the molds reach a cutting station, the conveyor belt is stopped, a cylinder is pushed out to fall the cutting knife shaft, and the cutting knives work and are rotated and move along the transmission screw by the driving of a speed reducer, so bean products are cut open according to a set standard; when the ...

Copper-based microcrystalline material preparation method

The invention relates to a copper-based microcrystalline material preparation method, and is an aqueous deposition method. The method comprises the processes of electric conductance, stress removal, degreasing, defined crystalline modification, surface regulation, activation, microcrystalline treatment and post-treatment, except the post-treatment process, and a flushing process is required on parts between the rest every two processes. According to a technical scheme, a reasonable microcrystalline treatment technology is used, a liquid containing cyanogen, chromium and fluorine is not used for the microcrystalline layer treatment process, thereby the environmental pollution can be reduced; the water liquid preparation and treatment process enable strong operationality, and can be carried out by common technical operators in the field; the hardness of the microcrystalline layer is HB90-180; the microcrystalline layer has high strength, no change or crack is generated on the surface after ...

Medicine composition for treating benign prostatic hyperplasia

The invention discloses a medicine composition for treating benign prostatic hyperplasia (BPH), comprising salviae miltiorrhizae and Eupolyphaga. The medicine composition disclosed herein can rapidly alleviate the clinical symptoms of BPH patients, and can reduce the prostate volume, and the price is low, and there is no side effect.

Automatic material positioning, overturning and placing device

The invention discloses an automatic material positioning, overturning and placing device, which comprises a plurality of material telescopic plates, wherein two ends of each telescopic plate are provided with rolling bearings, two adjacent rolling bearings are connected through inner telescopic strip-shaped holes and outer telescopic strip-shaped holes, the inner telescopic strip-shaped holes and the outer telescopic strip-shaped holes are arranged at intervals, the rolling bearings at the lower ends of the material telescopic plates are connected with oscillating rods, a transmission rod is arranged below the oscillating rods, and forks corresponding to the oscillating rods in positions and quantity are arranged on the transmission rod. The invention solves the problems of incapability of realizing that a positioning, overturning and placing process is fully-automatically completed and low production efficiency in the prior art, realizes positioning of the material telescopic plates because ...

System and method for detecting surface quality of coin mold

The invention discloses a system and a method for detecting surface quality of a coin mold. The system comprises a detector, a camera, a digital display dial indicator and a computer. The invention discloses a method for utilizing the system to detect the surface quality of the coin mold. The system and the method are applicable to the automatic detection of the surface quality of a circulation coin mold, a gold-silver coin mold and a gold-silver coin. The method comprises an image detection step and a geometric size detection step, so that the system and the method have advantages that defect characteristics are easy to capture, images are precise to collect and the contrast processing of the image is rapid and accurate. The error rejection rate is effectively reduced, the production efficiency is improved, the manmade error is reduced, and consistent control of the mold quality can be favored.

Vehicle powertrain with onboard catalytic reformer

Catalyst compositions suitable for use in the exhaust gas recycle stream of an internal combustion engine are provided. Such catalyst compositions typically provide significant amounts of methane in addition to syngas. A reformer incorporating such a catalyst for use in an exhaust gas recycle portion of an internal combustion engine powertrain is described. A powertrain incorporating such a reformer, a method of increasing the octane rating of an exhaust gas recycle stream, and a method of operating an internal combustion engine using methane-assisted combustion are also described.

Equipment and process for producing high-performance polyphenylene sulfide fine-denier fiber

The invention discloses equipment and a process for producing high-performance polyphenylene sulfide fine-denier fiber. The equipment comprises a drying system, a screw extruder, a filter, a spinning machine and a cooling device which are connected sequentially, wherein the drying system comprises a drying machine; a gas purification processor, a gas dehumidification processor, a fan and a heater are sequentially connected through gas delivery pipes in a sealed manner between a gas outlet and a gas inlet of the drying machine; the draw ratio of a screw rod of the screw extruder ranges from 26 to 32; the depth of a screw groove at the tail end of the metering section of the screw rod is 3 to 5 mm; an annular spinneret plate is mounted at the lower end of the spinning machine; and a plurality of concentric annular flow guide grooves and radial communicated flow guide grooves are formed in the annular spinneret plate. The process comprises the steps of selecting materials, drying, fusing, ...

Automatic paper paving device

The invention discloses an automatic paper paving device which comprises a piece of sheet stock paper, a slurry box and a pneumatic finger, wherein the slurry box is positioned between the sheet stock paper and the pneumatic finger, and the pneumatic finger is also provided with a first air cylinder; and a cutting knife is also arranged between the slurry box and the sheet stock paper, and the cutting knife is provided with a second air cylinder. The automatic paper paving device provided by the invention solves the problems that the slurry paper paving process in the prior art is not only low in efficiency, and the paper paving effect is poor; and the mechanized operation realizes slurry box paper paving, a brush wheel is utilized to drive away air bubbles between sheet paper and slurry, the paper paving efficiency is improved, the product quality is guaranteed, and the labour cost is reduced.

Method and system of improving transmission speed of embedded data transmission system

The invention provides a system and method for improving transmission speed of an embedded data transmission system. The system comprises an FPGA (field programmable gate array) module, a network card chip and a processor and is characterized in that a bus of the network card chip and a bus of the processor are respectively connected with a plurality of input-output interfaces of an FPGA so that the processor and the FPGA can cooperatively control the network card chip; a general input-output interface pin of the processor is connected with the input-output port of the FPGA, so that the processor can give control right of the network card chip to the FPGA to perform control, wherein the bus comprises a data bus, an address bus and a control bus; the processor adopts a TCP/IP (transmission control protocol)/(internet protocol) protocol. The synchronous clocks of the network card chip and the processor are connected to the FPGA module and used for realizing the synchronous data transmission ...

Cylinder heat-preservation workstation

The invention provides a cylinder heat-preservation workstation. Welding of a heat-preservation material inside a radiation-section cylinder can be automatically performed, and welding quality and welding efficiency are improved while manual intervention is reduced. The cylinder heat-preservation workstation comprises a supporting mechanism, a material collecting mechanism arranged on one side of the supporting mechanism, a material taking mechanism arranged on the supporting mechanism, a conveying mechanism arranged on the supporting mechanism, a supporting group movably arranged on the supporting mechanism, a welding mechanism arranged on the supporting mechanism, and a master control mechanism connected with the material taking mechanism, a supporting group and the welding mechanism respectively. The cylinder heat-preservation workstation can ensure the welding quality and welding efficiency in an automatic welding mode while cost is reduced.

Pharmaceutical composition for treating cardiovascular and cerebrovascular disease

The invention discloses a pharmaceutical composition for treating cardiovascular and cerebrovascular disease. The composition is a medicament prepared from raw materials comprising ginseng leaves, safflower, the root of red-rooted salvia and Erigeron breviscapus. The pharmaceutical composition has effects of invigorating the circulation of blood, smoothing tendon, smoothing blood, purging yin fire and nourishing kidney-yang. Pharmacodynamic tests have proved that the pharmaceutical composition has significant effect.

Medicine composition for treating cardia-cerebrovascular diseases

The invention discloses a medicine composition for treating cardia-cerebrovascular diseases, comprising ginseng, aspongopus, Angelica sinensis, and liquorice. The medicine composition disclosed herein can tonify qi and blood, tranquilize mind and nourish heart, and nourish the kidney and liver, and especially has good curative effect on ischemic cerebrovascular disease.

Directional high-thermal-conductivity low-expansion aluminum-graphite composite and preparation method thereof

The invention relates to a metal-matrix graphite composite and a preparation method thereof, in particular to a directional high-thermal-conductivity low-expansion aluminum-graphite composite and a preparation method thereof so as to solve the problems of poor orientation arrangement of graphite flakes, low density and inclusion containing of an existing aluminum-graphite composite. Aluminum-graphite is made of graphite flakes and aluminum, and the graphite flakes are 30-70vol.% in content in the composite and are arranged regularly and directionally. The preparation method includes the steps: firstly, loading the graphite flakes into a mould, and applying impact vibration to enable the graphite flakes to be arranged regularly and directionally so that a precast block is formed; secondly, preheating the steel mould, and heating the aluminum to be molten; thirdly, disposing the mould on a platform of a press, pouring the molten aluminum into the mould, and applying pressure through a punch ...

SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET

Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 1. A device , comprising:a semiconductor substrate;a plurality of gate trenches formed in the semiconductor substrate, each gate trench being lined with an insulating material along sidewalls inside the gate trench, each gate trench having a conductive material in the gate trench; anda plurality of contact structures, each contact structure being formed adjacent to a corresponding one of the plurality of trenches and being filled with conductive materials,wherein a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between adjacent contact structures of the plurality of contact structures.2. The device of claim 1 , wherein the insulating material along sidewalls inside each gate trench has a thicker portion along the sidewalls inside a lower portion of the gate trench and a thinner insulating material along the sidewalls inside an upper portion of the gate trench.3. The device of claim 2 , wherein the thicker portion of the insulating material has a thickness that is about 2 to 5 times of a thickness of the thinner portion.4. The device of claim 1 , wherein the conductive material in each gate trench has a bottom portion of the conductive material in a lower portion ...

Preparation method of traditional Chinese medicine leech extract

The invention discloses a preparation method of a traditional Chinese medicine leech extract, and relates to a preparation method of a leech extract. The invention aims to solve the problem that the biological activity of the active ingredient of leech in a traditional Chinese medicine leech extract prepared by using the existing method is greatly damaged. The preparation method comprises the following steps of: (1), adding crude leech powder into purified water, stirring and soaking, centrifuging and collecting the supernatant; (2), ultrasonically filtering the supernatant and collecting a filtrate A; (3), ultrasonically filtering the filtrate A, collecting trapped fluid and a filtrate B, wherein the trapped fluid is taken as an extract I, the filtrate B passes through a resin column, and a washing liquid is collected; (4), concentrating the washing liquid at reduced pressure, cooling, adding alcohol to adjust the alcohol content, stirring, standing, filtering, and collecting the supernatant ...

Engine load control system and control system thereof

The invention discloses an engine load control system. A return signal of a throttle position sensor is detected, related signals such as vehicle speed just at that moment, rotating speed of an engine, an opening angle of a throttle and change rate of the opening angle are analyzed, whether the engine is in a low-rotating-speed heavy load working condition is judged intelligently, and whether a high power load such as an air-conditioner compressor is required to be cut off in time is judged intelligently. Thus the aims of increasing effective output power of the engine in short time, causing the engine to enter into a better working condition as soon as possible, saving energy, reducing emission and improving operation comfort of a low-emission vehicle are achieved.

Special lifting tool for H-shaped wheel with large coil weight

The invention discloses a special lifting tool for an H-shaped wheel with large coil weight. The special lifting tool is characterized in that a lifting arm is arranged in the middle of an upper plane of a turntable; a lifting ring is arranged at the top end of the lifting arm; three bearing shafts are uniformly distributed on the edge of a lower plane of the turntable; the bearing shafts can rotate on the turntable; and a hanger is arranged at the lower end of the bearing shaft. Through the arrangement, the H-shaped wheel with large coil weight can be lifted for facilitating assembly and disassembly.

Standard lead brass spectral sample and preparation thereof

The invention provides a standard lead brass spectral sample. The standard lead brass spectral sample is made from raw materials including pure metal copper, Cu-Fe, Cu-Bi, Cu-Sb, Cu-P, Cu-Al, Cu-Ni, pure Pb and pure Zn, the raw materials are prepared into copper ally by processes such as smelting, ingot casting, homogenization treatment, squeezing and cover lathing, and the standard lead brass spectral sample contains seven trace elements including Pb, Fe, Bi, Sb, P, Al and the Ni. Various element ingredients in the standard lead brass sample are distributed uniformly, and the standard lead brass spectral sample is accurate in content and compact in texture and structure. In addition, the content of the main ingredient Pb in the standard sample is gradient, the various elements are good in distributed character, and the standard lead brass spectral sample can be analyzed in a photoelectric direct-reading spectrometer. Besides, the standard lead brass spectral sample is added with the element ...

Totally chlorine-free bleaching method of bamboo pulp for producing Daqian writing and painting paper

The invention discloses a totally chlorine-free bleaching method of bamboo pulp for producing Daqian writing and painting paper and aims to solve problem that the bamboo pulp for producing Daqian writing and painting paper in the prior art is subjected to two-stage hypochlorite bleaching, centralized pulping allows for centralized treatment of wastewater which can meet the existing emission standard of China, and still the wastewater contains dioxin and furan compounds which are discharged into the environment with the wastewater so as to badly influence the environment. The totally chlorine-free bleaching method includes the steps of oxygen delignification bleaching, peracid bleaching, and sodium hydrosulfite bleaching. By bleaching the bamboo pulp for producing the Daqian writing and painting paper, yield and strength of fiber can be guaranteed, pollution load caused by bleaching effluent can be reduced greatly, subsequent treatment is facilitated, and energy conservation and emission ...

Chain spanner

The invention discloses a chain spanner which is characterized in that a hook is arranged at one end of a handle, and the inside of the hook is connected to a fastening chain. The chain spanner is used for installation and removal of plastic pipes or valves, the length of the fastening chain can be flexibly regulated according to sizes of the valves to be installed or removed, and damages on plastic pipes and the valves can be avoided.

Nickel-based amorphous material preparation method

The invention relates to a preparation method for a nickel-based amorphous material, which is an aqueous deposition method. The method comprises the processes of electric conductance, stress removal, degreasing, defined crystalline modification, surface regulation, activation, amorphous treatment and post-treatment, besides the post-treatment process, and a flushing process is required on parts between the rest every two processes. According to a technical scheme, a reasonable amorphous treatment technology is used, a soup containing cyanogen, chromium and fluorine is not used for the noncrystal layer treatment process, thereby the environmental pollution can be reduced; the water liquid preparation and treatment process enable strong operationality, and can be carried out by common technical operators in the field; the hardness of the noncrystal layer is HV950-1200; the noncrystal layer enables high strength, no change and crack is generated on the surface after thermal shock for 820 hours ...

Welding smoke purifier

The invention proposes a welding smoke purifier. The welding smoke purifier comprises a dust collection cover, a dust collection hose connected with the dust collection cover, and a purifying box connected with the dust collection hose, wherein the purifying box comprises a casing, a fire stopping piece arranged in the casing, a guide plate arranged below the fire stopping piece, a smoke filtering zone arranged below the guide plate, and a gas exhaust fan arranged below the smoke filtering zone; a gas inlet communicated with the dust collection hose is formed in the top end of the casing; a gas outlet is formed in the bottom end of the casing; the smoke filtering zone comprises a filter element and an injection pipe extending into the filter element; the injection pipe is used for spraying high-pressure air flow to the filter element. The welding smoke purifier ensures that welding fume and waste gas enters the purifying box from the dust collection hose via the dust collection cover through ...

Chain broadcasting method and device

The invention relates to a chain broadcasting method and a device. The method comprises that: channel state information of a plurality of access points (AP) closing to a user terminal is obtained by wireless controller adaptive control (AC), the AC calculates according to the channel state information, an AP for chain broadcasting is chosen through a manner of calculating and comparing the channel state information, after the AP for chain broadcasting is chosen, destination addresses that belong to the data of the user terminal are respectively sent to the AP for chain broadcasting serving as a chain broadcasting system, the AP for chain broadcasting sends data for the user terminal simultaneously according to the timestamp information so as to improve a data rate of the user terminal.

Steam-injection boiler unit transmission section box body prefabricating work station and machining technology thereof

The invention provides a steam-injection boiler unit transmission section box body prefabricating work station. The steam-injection boiler unit transmission section box body prefabricating work station comprises a box body frame pairing welding mechanism, a box body frame inner welding seam welding mechanism and an AGV driverless vehicle which are connected in operating sequence; a box body frame component is welded to be a primary frame by the box body frame pairing welding mechanism, the primary frame is transported by the AGV driverless vehicle to the box body frame inner welding seam welding mechanism, the primary frame is welded by the box body frame inner seam-welding welding mechanism, and a finished product frame is formed. By means of the steam-injection boiler unit transmission section box body prefabricating work station, an intelligent, flexible and automatic advanced production technology is introduced into traditional manufacturing industries, the switchover of a high-efficiency ...

Efficient organic fluorescent material and preparation method of efficient organic fluorescent material

The invention provides an efficient organic fluorescent material and a preparation method of the efficient organic fluorescent material and relates to an organic photoelectric material and a preparation method of the organic photoelectric material. The efficient organic fluorescent material has the structure formula shown as the accompanying drawing, and in the formula, A groups represent aromatic groups. The preparation method of the efficient organic fluorescent material comprises the following steps that aryl-containing halides A-Br, arylboronic acid, alkali and solvents are added, the reaction system is subjected to degassing, and catalysts are added for completing the reaction. The product has the advantages that the larger pi conjugated system can be formed, the film forming performance is good, the product is suitable for being used as an OLED (organic light-emitting diode) device, and the requirement on the fluorescent material is met.

Control method of molding shape in glass base plate production

The invention relates to a control method of a molding shape in glass base plate production, which is characterized in that the control method comprises the following steps of: applying a first acting force (F1) and a second acting force (F2) to a glass plate from the left side of the glass plate along the horizontal direction between a stress removing zone and a cutting device zone, and simultaneously applying a third acting force (F3) and a fourth acting force (F4) to the glass plate from the right side of the glass plate along the horizontal direction. The control method used in the glass base plate production has the advantages that 1 the transection stability of the glass plate is improved so that the cutting loss is greatly reduced, and production yield is improved; 2 the form of glass plate is stable between the stress removing zone and a cutting device zone so that the warping and stress stability is greatly improved; and 3 the size adjustment of the molding shape for the form of ...

Backlight module and display device

The invention discloses a backlight module and a display device, so that the side bright line of the backlight module is reduced, and the image quality of the backlight module is improved. The backlight module comprises a rubber frame and a light guide plate arranged in the rubber frame, wherein avoiding structures are respectively arranged on the sides, close to the incident light side, of two non-incident light sides parallel to the rubber frame; the side, away from the end face of the light guide plate, of each avoiding structure is closed through a surface sealing structure. The avoiding structures provide larger gaps between the end face of the light guide plate and the surface sealing structures, so that the optical path of the light radiated out from the end face of the light guide plate can be increased, a part of light radiated out from the end face of the light guide plate is absorbed by the surface sealing structures, the other part of light enters into the light guide plate ...

Cylinder reinforcing ring assembling-welding workstation and welding method thereof

The invention provides a cylinder reinforcing ring assembling-welding workstation and a cylinder reinforcing ring welding method. The cylinder reinforcing ring assembling-welding workstation comprises a supporting device for supporting and conveying a cylinder, a cylinder roundness correction and supporting mechanism for conducting hydraulic roundness correction and supporting on the cylinder, a reinforcing ring fixing and walking mechanism used for arranging a reinforcing ring and capable of conveying the reinforcing ring and a reinforcing ring assembling mechanism. By the adoption of the cylinder reinforcing ring assembling-welding workstation and the cylinder reinforcing ring welding method, an advanced production technology is intelligently, flexibly and automatically introduced to traditional manufacturing industry, conversion of an efficient, environment-friendly and green production mode is achieved, and transformation and upgrading of the traditional industry are achieved.

Medicine composition for treating cardia-cerebrovascular diseases

The invention discloses a medicine composition for treating cardia-cerebrovascular diseases, comprising fructus choerospondiatis, sargentodoxa cuneata and herba erigerontis. The medicine composition disclosed herein can benefit qi and blood circulation, disperse blood stasis and dredge collateral, tranquilize mind and nourish heart, and especially has good curative effect on cerebrovascular diseases.

Measurement calibration method for multi-characteristic impedance network

The invention provides a measurement calibration method for a multi-characteristic impedance network. The method comprises the following steps: firstly, defining the connector type of each port of a tested piece and a used calibration piece respectively, defining the port characteristic impedance of a vector network analyzer while defining the connector type of the port, and reading the characteristic impedance information of the port from the definition of a connector by using a calibration program, wherein the definition of the connector type includes the characteristic impedance information; secondly, determining six system errors through single-port reflection calibration by using an eight-vector error correction model; and lastly, connecting a characteristic reciprocal adapter between two ports, and solving a last error via through calibration. According to the measurement calibration method for the multi-characteristic impedance network provided by the invention, measurement of all ...

BACKLIGHT MODULE AND DISPLAY DEVICE

The present invention discloses a backlight module and a display device, so as to improve the luminous effect of the backlight module. The backlight module includes: a backboard; a seal frame and a light guide plate arranged in the backboard; and a light source assembly located between the light guide plate and the seal frame. The light source assembly comprises a light source and a circuit board for controlling the light source. A bottom surface of the circuit board of the light source assembly abuts against an inner surface of the backboard. Since the bottom surface of the circuit board abuts against the inner surface of the backboard, the heat generated by the light source of the light source assembly may be transferred to the backboard through the circuit board and directly dissipated outside from the backboard. Thereby, it may prevent the temperature of the light source and the light guide plate from becoming over high, increasing the light emitting effect of the light source and light guide plate, and improving the luminous effect of the backlight module. 1. A backlight module , comprising:a backboard;a seal frame and a light guide plate arranged in the backboard; anda light source assembly located between the light guide plate and the seal frame, the light source assembly comprising a light source and a circuit board for controlling the light source,wherein a bottom surface of the circuit board of the light source assembly abuts against an inner surface of the backboard.2. The backlight module according to claim 1 ,wherein a top surface of the circuit board abuts against a surface of the light guide plate facing the inner surface of the backboard.3. The backlight module according to claim 2 ,wherein a groove is formed in the inner surface of the backboard, and at least a portion of the circuit board is located in the groove.4. The backlight module according to claim 3 ,wherein a step-shaped groove is formed in the surface of the light guide plate facing the ...

Automatic pellet filling and placing device

The invention discloses an automatic pellet filling and placing device which comprises a conveyer belt, wherein the conveyer belt is electrically connected with a servomotor, and a pellet clamper is arranged above the conveyer belt; and the left and right sides of the pellet clamper are respectively provided with a first filling box and a second filling box, and the frontage of the pellet clamper is provided with a first pellet template which can move to the position below the pellet clamper. The automatic pelleting filling and placing device provided by the invention solves the problems that when a worker places a pellet in the prior art, the pellet can not be correctly placed the middle of slurry; and the filling of the slurry is finished through two steps, the pellet is placed on the filled slurry in the first step before the secondary slurry filling, and the pellet is guaranteed to be placed the middle of the slurry.

Diaphragm spring for clutch

The invention discloses a diaphragm spring for a clutch. The whole diaphragm spring is of a disc-shaped structure and comprises a disc spring and a plurality of separated fingers. The separated fingers are centrally symmetric by using the disc spring as the center of the circle. The inner circle of the disc spring and the separated fingers are connected into a whole. Stress holes are formed in the portion, connected with the separated fingers, of the disc spring. The separated fingers are stamped to be stair-shaped separated fingers to be bent. The separated fingers are divided into three sets. Each set of separated fingers is provided with short separated fingers to form separated fingers with unequal lengths. The outer circle of the disc spring is in finish machining and is precisely matched and positioned with the interior of a clutch cover. When the diaphragm spring normally works, the diaphragm spring can be accurately positioned, pulling rings are separated, deflection during working ...

Welding positioner

The invention discloses a welding positioner which comprises a rotary plate, two first rotary arms, two second rotary arms, two third rotary arms and two supporting columns, wherein the two first rotary arms are arranged on the two sides of the rotary plate, the two second rotary arms are rotationally connected with the two first rotary arms respectively, the two third rotary arms are rotationally connected with the two second rotary arms respectively, the two supporting columns are rotationally connected with the two third rotary arms respectively, and the supporting columns are fixedly arranged. According to the welding positioner, a welding gun or other welding elements are arranged on the rotary plate so that the rotary plate can be driven for welding, the first rotary arms, the second rotary arms and the third rotary arms can rotate relative to one another so that the rotary plate can be switched in all directions in the horizontal plane, and accordingly switching of various work angles ...

GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME

A tunnel field-effect transistor device includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InGaN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. 1. A tunnel field-effect transistor comprising:a source-layer including p-type GaN;a drain-layer including n-type GaN; andan interlayer interfaced between the source-layer and the drain layer, wherein the interlayer includes an InN layer.2. The tunnel field-effect transistor of claim 1 , wherein the tunnel field-effect transistor further includes a gate claim 1 , wherein the source layer claim 1 , the drain-layer claim 1 , the interlayer and the gate are arranged in an in-line configuration.3. The tunnel field-effect transistor of claim 2 , wherein the thickness of the interlayer is within the range of 0.1 to 3.0 nanometers.4. The tunnel field-effect transistor of claim 2 , wherein the thickness of the interlayer is based on the width of the gate claim 2 , wherein the thickness of the interlayer is based on an observed relationship that an interlayer thickness of 1.7 nanometers for a gate width of 20 nanometers provides for desirable operating characteristics.5. The tunnel field-effect transistor of claim 1 , wherein the tunnel field-effect transistor further includes a gate claim 1 , wherein the source layer claim 1 , the drain-layer claim 1 , the interlayer and the gate are arranged in a side-wall configuration.6. The tunnel field-effect transistor of claim 5 , wherein the thickness of the interlayer is within ...

SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET

Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 1. A device , comprising:a semiconductor substrate;a plurality of gate trenches formed in the semiconductor substrate, each gate trench being lined with an insulating material along sidewalls inside the gate trench, each gate trench having a conductive material in the gate trench; anda plurality of contact structures, each contact structure being formed adjacent to a corresponding one of the plurality of trenches and being filled with conductive materials,wherein a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between adjacent contact structures of the plurality of contact structures.2. The device of claim 1 , wherein the insulating material along sidewalls inside each gate trench has a thicker portion along the sidewalls inside a lower portion of the gate trench and a thinner insulating material along the sidewalls inside an upper portion of the gate trench.3. The device of claim 2 , wherein the thicker portion of the insulating material has a thickness that is about 2 to 5 times of a thickness of the thinner portion.4. The device of claim 1 , wherein the conductive material in each gate trench has a bottom portion of the conductive material in a lower portion ...

Double-line arcing type residual current circuit breaker with ground wire protection

A double-lien arcing type residual current circuit breaker with ground wire protection comprises an outer bottom shell and a press-button. The press-button is clamped on one side, close to an outer shell shaft, of a moving press torsion spring. The moving press torsion spring is sleeved on the outer bottom shell shaft. One end of the moving press torsion spring is connected with a guide wire and is pressed on a baffle on magnet steel. When the press-button is pressed down, the moving press torsion spring is in arc-shaped motion around the outer shell shaft and is contacted with a static press torsion spring. When the press-button is loosened, the moving press torsion spring restores to be in a normally-open state. The double-line arcing type residual current circuit breaker has the advantages that a small press-button device is adopted, so that more space is saved and can be used by an arcing device, and therefore breaking capacity of the breaker is improved; an operation mechanism is not ...

Traditional Chinese medicine preparation for treating headache, dizziness and concussion sequelae

The invention discloses a traditional Chinese medicine preparation for treating headache, dizziness and concussion sequelae. The traditional Chinese medicine preparation is characterized by (1) weighing 80 to 160 g of dahurian angelica root, 80 to 160 g of Chinese angelica, 80 to 160 g of ligusticum wallichii, 80 to 160 g of uncaria, 50 to 100 g of manchurian wildginger, 80 to 160 g of drgon's bone, and 30 to 60 g of mint; (2) weighing 50 g of dahurian angelica root, 50 g of Chinese angelica, and 75 g of ligusticum wallichii, crushing them into 100-mesh fine powder as standby, crushing the remaining dahurian angelica root, Chinese angelica and ligusticum wallichii and other herbs of step (1) into 10-mesh crude powder, adding water into the crude powder and then decocting for two times, each time for 2 to 2.5 hours, filtering, combining the two decocted liquid, and then condensing the liquid into a condensed juice with a relative density of 1.15 to 1.30 at 80 DEG C; and (3) adding the fine ...

Medicine composition for treating dyspepsia

The invention discloses a medicine composition for treating dyspepsia, comprising hedysarum polybotrys, ginger processed pinellia, myristica fragrans, fructus amomi, Poria cocos and liquorice. The medicine composition disclosed herein can strengthen spleen and stomach, promote digestion, help digestion and stop diarrhea, and especially can treat appetite decreases and dyspepsia caused by yin deficiency of spleen and stomach, and the curative effect is exact.

Medicine composition for treating benign prostatic hyperplasia

The invention discloses a medicine composition for treating benign prostatic hyperplasia (BPH), comprising red peony root, caulis akebiae, gallnut and liquorice. The medicine composition disclosed herein can rapidly alleviate the clinical symptoms of BPH patients, and can reduce the prostate volume, and the price is low, and there is no side effect.

Control system for pipe preprocessing workstations

The invention provides a control system for pipe preprocessing workstations. The control system comprises a general operation desk and a control center. The general operation desk is communicated with the control center via a switchboard; the switchboard is connected with distributed I/O (inputs/outputs) which are formed in the pipe preprocessing workstations; the distributed I/O are connected with various machining devices; the control center is connected with branch control cabinets which are arranged in the pipe preprocessing workstations; the branch control cabinets are connected with variable-frequency driving devices or servo driving devices; the control center is connected with robots which are arranged in the pipe preprocessing workstations. The control system has the advantages that the control system has a field monitoring function, an alarm preprocessing function, a permission function and a production management function; the various devices can be perfectly matched with one ...

Small interference RNAs for human GSK-3beta gene and application thereof

The invention relates to a set of siRNAs directed at the human GSK-3beta gene and application thereof. According to the invention, sequences at the coding region of the human GSK-3beta gene are selected as target sites of the siRNAs, and the siRNAs are designed based on 10 to 30 (preferably, 15 to 27, and more preferably, 19 to 23) continuous base sequences in the target sites. Cell experiments prove that the siRNAs can reduce expression of the human GSK-3beta gene in a sequence-specific manner and thus reduce the expression level of GSK-3beta protein.

Ball clamping device

The invention discloses a ball clamping device which comprises a ball template, wherein insertion pins and a guide sleeve which are corresponding to the ball template are arranged above the ball template, the guide sleeve is internally provided with two guide holes, the insertion pins pass through the guide hole, and the included angle between the two guide holes is 3-6 degrees. The ball clamping device disclosed by the invention can be used for solving the problem that in the prior art, the ball is easy to fall or is hard to take off at the time of clamping. The guide holes in the guide sleeve are arranged with certain inclined angles. The insertion needles extend along the guide hole so as to be inserted into the ball with a certain angle after passing through the guide holes, so that the falling of the clamped ball can be avoided. When the ball is required to be put in slurry, the insertion pins move upwards to enable the ball to fall by virtue of the resistance of the guide sleeve.

High-temperature gas flow rate measuring standard device and detection method thereof

The invention relates to a high-temperature gas flow rate measuring standard device and a detection method thereof. The existing standard meter type gas flow rate measuring standard device rarely considers that under the actual working occasion, the temperature of the detected gas is not the normal temperature, and the response of the gas flowmeter on the gases with different temperatures is neglected, so the measuring result is not accurate. The high-temperature gas flow rate measuring standard device comprises a flow rate adjusting device, a temperature adjusting device and a flow rate detection device, wherein the flow rate detection device is arranged at the upstream of the temperature adjusting device; the calibrated meter is arranged at the downstream of the temperature adjusting device; the flow rate adjusting device is arranged at the upstream of the whole device; a positive pressure method is used for measuring. The high-temperature gas flow rate measuring standard device has the ...

Assembling and welding working station for cylinders and end plates of steam-injection machine

The invention provides an assembling and welding working station for cylinders and end plates of a steam-injection machine. The assembling and welding working station comprises turnover position-changing machines, end plate clamps, a three-axis sliding table, a welding robot, a main rolling wheel frame, an auxiliary rolling wheel frame and an electric control system. The two turnover position-changing machines are arranged on the two sides of the working station respectively, the two end plate clamps are arranged on the two sides of the working station respectively, the three-axis sliding table is arranged between the two turnover position-changing machines, the welding robot is arranged on the three-axis sliding table, the working station is provided with a guide rail, and the main rolling wheel frame and the auxiliary rolling wheel frame are arranged below the three-axis sliding table and can walk along the guide rail. An automatic assembly technology is adopted, the whole process is ...

Automatic welding working station for prying base of steam-injection boiler unit and machining technology thereof

The invention provides an automatic welding working station for a prying base of a steam-injection boiler unit and a machining technology. The automatic welding working station comprises a prying base assembly welding mechanism, an assembly carrying mechanism, a single-axis double-drive position-changing machine, an assembly clamp mechanism and a numerical control system, wherein the assembly clamp mechanism and the numerical control system are arranged on the position-changing machine. The assembly carrying mechanism carries a prying base assembly to an appointed position of the assembly clamp mechanism, the prying base welding mechanism welds the prying base assembly on the assemble clamp mechanism, and the position-changing machine can rotate the assembly clamp mechanism, and the numerical control system controls moving and positioning of the prying base welding mechanism and the assembly carrying mechanism. By the adoption of the technical scheme, an intelligent, soft and automatic ...

Split-gate trench power mosfet with protected shield oxide

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Bean product semi-automatic slitting shear machine

The invention discloses a bean product semi-automatic slitting shear machine which comprises an upper die and a lower die, wherein a cutting knife is arranged between the upper die and the lower die, and the cutting edge of the cutting knife is formed by multiple crescent moon shape blades through connection. The bean product semi-automatic slitting shear machine provided by the invention solves the problems in the prior art that the bar cutting efficiency of bean product is low, and the notch is not smooth, the bean product notch after bar cutting keeps smooth through changing the edge of the cutting knife, and the quality of a product is improved; and multiple air cylinders control the upper die and the lower die to realize semi-automatic control on loading, bar cutting and material taking, and the production efficiency is improved.

Automatic wearing clearance compensation device for S pipe valve of concrete pump

The invention relates to an automatic wearing clearance compensation device for an S pipe valve of a concrete pump. The automatic wearing clearance compensation device is composed of an S pipe, a rocker arm, a round nut, a cutting ring, an elastic ring, a glasses plate and a compression spring, wherein the rocker arm is fixed on the S pipe by the round nut, and the S pipe is connected with the glasses plate by the cutting ring and the elastic ring. The automatic wearing clearance compensation device is characterized in that a screw rod part of the S pipe, which is matched with the round nut, is removed, and a threaded hole with the corresponding depth is chiseled at the center of a spline shaft of the S pipe; a screw rod matched with a thread of the S pipe is arranged on the end surface of the round nut; and the compression spring is additionally arranged between the round nut and the rocker arm, and the screw rod of the round nut penetrates through the compression spring, is inserted into ...

Motor adopting photovoltaic cell reversing technology

The invention relates to a motor adopting a photovoltaic cell reversing technology. The motor comprises a stator, a rotor and a laser transmitting tube; the stator is a permanent solid magnet and is used for providing a fixed magnetic field to be vertical to the axial direction of the rotor; the rotor comprises coil windings and photovoltaic cells, the photovoltaic cells substitute a reversing device of a traditional motor, every two adjacent photovoltaic cells are connected with each other end to end and are connected with the coil windings in end-to-end connection; a laser beam of the laser transmitting tube can be remotely aligned to the photovoltaic cells on the rotor and is arranged at one side of a rotor shaft; and the motor is characterized in that the photovoltaic cells convert the optical energy of the received laser beam into electric power to be supplied to the rotor coil windings, and meanwhile, the direction of a current of the coil windings can be automatically changed after ...

Traditional Chinese medicine preparation for treating migraine and trigeminal neuralgia

The present invention discloses a traditional Chinese medicine preparation for treating migraine and trigeminal neuralgia. A purpose of the present invention is to design a migraine and trigeminal neuralgia treatment traditional Chinese medicine preparation with characteristics of good treatment effect and low processing cost. The technical scheme is: (1) selecting ginseng, angelica, safflower, szechwan lovage rhizome, prepared common monkshood mother root, divaricate saposhnikovia, doubleteeth angelica root, ovientvine stem, papaya and semen ziziphi spinoae, (2) taking the ginseng and the safflower, and crushing into fine powder to be spare, and (3) taking the remaining 8 traditional Chinese medicines, crushing into coarse powder, adding water to carry out boiling extraction three times, mixing the boiling liquids, filtering, concentrating, carrying out vacuum drying, crushing into fine powder to be spare, uniformly mixing the two fine powders, and filling into drug capsules to complete ...

Liquid crystal television and liquid crystal panel assembling structure of liquid crystal television

The invention discloses a liquid crystal television and a liquid crystal panel assembling structure of the liquid crystal television. The liquid crystal panel assembling structure is arranged on a front shell and an intermediate frame support. The front shell is provided with a positioning rib strip and a clamping hook. The intermediate frame support is provided with a positioning groove which is used for matching insertion of the positioning rib strip, and a clamping stand which is used for matching hooking of the clamping hook. As the technical means that the front shell is provided with the positioning rib strip and the clamping hook, and the intermediate frame support is provided with the positioning groove and the clamping stand are adopted, the positioning rib strip matches the positioning groove, and the clamping hook is clamped with the clamping stand so that movement, which is relative to the intermediate frame support, of the front shell in three directions is limited jointly.

Bean product cutting equipment with mold cleaning function

The invention discloses bean product cutting equipment with a mold cleaning function. The bean product cutting equipment comprises a conveying belt and multiple molds fixed on the conveying belt, horizontal strip cutting equipment and longitudinal strip cutting equipment are arranged above the conveying belt, and at least one first clean water tank and first nozzles communicated with the same are arranged below the conveying belt. By arranging the clean water tanks and a sterilization water tank below the conveying belt, when the molds pass the clean water tanks and the sterilization water tank along with the conveying belt, a water pump is started, and cleaning and sterilizing of the molds are automatically completed through the nozzles; when the molds return to working positions again, hygienic index safety of the molds is ensured to meet requirements of food production.

(2-(3-methylthio-1,2,4-thiadiazinyl)ethyoxyl)methyl phosphonate derivatives, and preparation and application thereof

The invention relates to (2-(3-methylthio-1,2,4-thiadiazinyl)ethyoxyl)methyl phosphonate derivatives, and preparation and application thereof. The structure of the derivatives is disclosed as General Formula I, wherein R is hydrogen, ethyl group, pivalicmethyl group, isopropoxycarbonyloxomethyl group or benzyloxycarbonyloxomethyl group. The invention also provides a preparation method and application of the derivatives. The derivatives provided by the invention have high anti-HBV (hepatitis B virus) activity, and can be used as a lead compound for preparing anti-HBV medicines.

Connecting device for in-situ distillation and Os (osmium) on-line measurement for Carius pipe

The invention discloses a connecting device for in-situ distillation and Os (osmium) on-line measurement for a Carius pipe, wherein the whole body is a glass pipe; the upper end of the glass pipe is a carrier gas inlet; the glass pipe is internally provided with an inner pipe and an outer pipe which are concentric; the inner pipe is a carrier gas channel; the outer pipe is a mixed gas channel for a mixed gas consisting of Os steam and the carrier gas; one end of the carrier gas channel is hermetically connected with the inner wall of the carrier gas inlet, therefore the situations that the carrier gas escapes and the mixed gas of the Os steam and the carrier gas enters into the carrier gas channel are prevented; the other end of the carrier gas channel is connected with a capillary; one side of the mixed gas channel is provided with a port which is connected with the carrier gas port of an atomizer; the gas outlet of the Carius pipe is hermetically connected with the outer wall of the glass ...

Split-gate trench power MOSFET with protected shield oxide

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Dual band adaptive concurrent processing method and apparatus

Embodiments of the present invention provide a dual band adaptive concurrent processing method and apparatus. In the embodiments of the present invention, by using statistical information of services at first and a second frequency bands in the Nth adjustment period, performance of the services at the frequency bands in an adjustment period may be acquired. Based on the statistical information, and a quality of service (QoS) requirement that the services at the two frequency bands need to meet, a second coefficient of proportionality between timeslots occupied by the services at the two frequency bands in the (N+1)th adjustment period may be determined, so that switching control on first and second channels may be performed in the (N+1)th adjustment period according to the determined second coefficient of proportionality.

Coagulating bath solution of polyacrylonitrile-based protofilament, preparation method and application

The invention discloses coagulating bath solution of polyacrylonitrile-based protofilament, comprising the following components: dimethyl sulfoxide, water and a third component, wherein the volume ratio of the dimethyl sulfoxide and the water is (120-230):100; and the content of the third component in the dimethyl sulfoxide solution is 0.02mol/L-0.08mol/L. A preparation method comprises the following steps of: mixing the dimethyl sulfoxide and the water according to the volume ratio being (120-230):100, and mixing uniformly at the temperature of 45-60 DEG C so as to obtain the dimethyl sulfoxide solution; adding the third component in the dimethyl sulfoxide solution with the content in the dimethyl sulfoxide solution being 0.02mol/L-0.08mol/L, and mixing uniformly to obtain the coagulating bath solution of the polyacrylonitrile-based protofilament. The invention has the advantages that the performance of the polyacrylonitrile-based protofilament can be improved and the spinning speed can ...

Traditional Chinese medicine preparation for treating tinnitus and deafness

The invention discloses a traditional Chinese medicine preparation for treating tinnitus and deafness. The technical solution of the invention comprises (1) selecting ginseng, safflower, Ligusticum wallichii, spine date seed, acorus gramineus, rhizoma drynariae, fructus liquidambaris, barbary wolfberry fruit and dwarf lilyturf tuber; (2) adding water which is 6 to 8 times of the total weight of the abovementioned nine traditional Chinese medicines to decoct for three times, filtering, combining the decocted liquid, and then condensing the liquid to be a condensed juice with a relative density of 1.15 to 1.30 at 80 DEG C; adding 95 % ethanol with stirring at room temperature to enable the ethanol content to be 60 %; decocting and recycling a supernatant; adding 5 to 20 g of musk and single syrup as well; adjusting pH value of the solution to 5.0 to 7.0; adding water to enable the solution volume to reach 1000 mL; well stirring and standing, filtering, sterilizing, and then filling to complete ...

Cutting and welding robot

The invention provides a cutting and welding robot. The cutting and welding robot comprises a base, a rotary seat, a lower arm, an upper arm, a first hand part, a second hand part and a third hand part, wherein the rotary seat is arranged on the base and is rotatably connected with the base through a first rotary shaft, the lower arm is arranged on the rotary seat, and one end of the lower arm is rotatably connected with the rotary seat through a second rotary shaft, the upper arm is arranged on the other end of the lower arm and is rotatably connected with the lower arm through a third rotary shaft, the first hand part is arranged on the upper arm and is rotatably connected with the upper arm through a fourth rotary shaft, the second hand part is arranged on the first hand part and is rotatably connected with the first hand part through a fifth rotary shaft, and the third hand part is arranged on the second hand part and is rotatably connected with the second hand part through a sixth ...

Synthetic method of 3,4,5-substituted pyrazole compound

The invention discloses a synthetic method of a 3,4,5-substituted pyrazole compound. The method comprises the step of reacting a diazo acetate compound and a carbonyl compound containing alpha-H, both of which serve as raw materials, in a reaction solvent under a catalytic action of an amine compound to obtain the 3,4,5-substituted pyrazole compound. The synthetic method has the advantages of cheap and readily available raw materials, mild reaction condition, convenience in operation, high yield and good industrial application prospect.

Dust collection device for transition section prefabrication work station

The invention proposes a dust collection device which is use for being arranged in a transition section prefabrication work station. The dust collection device comprises a casing, a servo motor arranged at the top end of the casing, noise absorption equipment arranged below the servo motor, a filter arranged below the noise absorption equipment, and a collection chamber arranged below the filter, wherein a gas inlet is formed in one side of the casing at a position corresponding to the filter; a gas outlet is formed in the other side of the casing at a position corresponding to the noise absorption equipment; the filter comprises a vertically arranged filter drum and a back blow dedusting mechanism arranged in the filter drum; the back blow dedusting mechanism comprises a back blow electromagnetic valve positioned at the top end of the filter drum and a pulse jet mechanism connected with the lower surface of the back blow electromagnetic valve. The dust collection device can be cleaned ...

Medicine composition for treating benign prostatic hyperplasia

The invention discloses a medicine composition for treating benign prostatic hyperplasia (BPH), comprising aspongopus and Angelica sinensis. The medicine composition disclosed herein can rapidly alleviate the clinical symptoms of BPH patients, and can reduce the prostate volume, and the price is low, and there is no side effect.

Medicine composition for treating dyspepsia

The invention discloses a medicine composition for treating dyspepsia, comprising fingered citron, fructus amomi, dried tangerine peel, Chinese yam and liquorice. The medicine composition disclosed herein can strengthen spleen and stomach, promote digestion, help digestion and stop diarrhea, and especially can treat appetite decreases, dyspepsia caused by yin deficiency of spleen and stomach, and the curative effect is exact.

Mold positioning and calibrating device

The invention provides a mold positioning and calibrating device comprising positioning plates. The positioning plates are arranged on two sides of a mold walking direction. At least one bump is arranged on one side end face, close to a mold, of each positioning plate, and grooves identical to the bumps in quantity and shape are arranged on two sides of the mold. The positioning plates are arranged on two sides of mold travelling route and alignment is performed through the triangular bumps on the positioning plates and the grooves on the mold, so that error of the mold on a cutter station is corrected, and safe life of a cutter during undercutting is protected to the utmost extent.

Mould for casting concrete foundation

The invention discloses a mould used for casting a concrete foundation. The mould which is in a polygon shape comprises a plurality of side plates and a plurality of angle plates, wherein the side plates which are made of fiber reinforced plastic are used for surrounding into frames of a polygon; the angle plates are used for connecting adjacent side plates; inner lateral sides of the side plates are smooth planes; inner lateral sides of the angle plates are smooth arc surfaces; the side plates are closely attached to end portions of the angle plates which are connected with the side plates; and two ends of every side plate and two ends of every angle plate are respectively provided with a connecting portion which extends out towards external sides. The mould for casting the concrete foundation has the advantages of being high in strength, light in weight, smooth in surface, convenient to transport and assemble, reusable and the like due to the fact that fiber reinforced plastic materials ...

Convection section three-axis type welding workstation

The invention provides a convection section three-axis type welding workstation in order to solve the problem that a welding robot in the prior art is low in guiding accuracy and poor in running stability. The convection section three-axis type welding workstation comprises a frame and stand columns, wherein the frame is installed on the stand columns, and the included angle between the frame and each stand column is 90 degrees. Two parallel Y axis guide rails at the same height are arranged on the frame, and a beam can be arranged on the two Y axis guide rails in a sliding mode. An X axis guide rail is arranged on the beam, and a sliding table can slide along the X axis guide rail. A Z axis guide rail is arranged on one side of the sliding table and provided with a welding robot, and the welding robot is arranged on the Z axis guide rail and can slide up and down. A servo motor and a controller are installed on the frame, and the servo motor is electrically connected with the controller ...

MOSFET device and fabrication

A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region.

Transverse wire stripping tool for control cable

The invention discloses a transverse wire stripping tool for a control cable. The transverse wire stripping tool includes two arc-shaped connecting plates which are arranged in a mirroring manner, an upper pressing plate, a lower pressing plate, a handle and a blade; one end of each connecting plate is provided with engagement teeth, and the other end of each connecting plate is provided with a friction wheel; the upper pressing plate and the lower pressing plate are respectively arranged at the upper surfaces and the lower surfaces of the connecting plates; the connecting plates are rotatably connected with the upper pressing plate and the lower pressing plate; the handle comprises a holding part and a driving rod; the driving rod is provided with an external screw thread which is engaged with the engagement teeth of the connecting plates; the blade is arranged between the upper pressing plate and the lower pressing plate and is located in a space enclosed by the two connecting plates; ...

Forced reminding method and system for smart sports apparatuses

Disclosed is a forced reminding method and system for smart sports apparatuses. The method includes: establishing communication connection between a sports apparatus provided with a control unit and a mobile terminal, and acquiring an MAC address of the mobile terminal; the control unit judging whether the control unit and the mobile terminal belong to a same local area network or not, and if yes, sending a reminding signal for reminding a user of exercise to the mobile terminal; if the mobile terminal responds to the reminding signal for reminding the user of exercise, sending a response signal of starting exercise to the control unit; the control unit receiving the response signal of starting exercise, starting a preset exercise plan, and when the preset exercise plan is finished, pushing related information of the preset exercise plan to an APP of the mobile terminal for the user to view. Therefore, the control unit identifies whether the user belongs to a remind area range of the same ...

Aryl-biquinoline iridium-complex organic phosphorescent material, preparation method and applications of aryl-biquinoline iridium-complex organic phosphorescent material

The invention provides an aryl-biquinoline iridium-complex organic phosphorescent material, a preparation method and an application of the aryl-biquinoline iridium-complex organic phosphorescent material, and solves the problems that the existing iridium complex red organic phosphorescent material can not have high efficiency, high saturated color purity and long service life at the same time. The complex is the organic phosphorescent material with a basic framework structure being the aryl-biquinoline iridium complex. The invention also provides the preparation method of the aryl-biquinoline iridium-complex organic electro-phosphorescent material, and the preparation method is characterized in that the synthesis process is simple, the purification is easy, the cost is low, and the industrial synthesis yield is greatly increased. The aryl-biquinoline iridium complex provided by the invention is applied to an organic electroluminescent material and has high luminous efficiency, so that the ...

BACKLIGHT SOURCE AND DISPLAY APPARATUS

The present disclosure provides a backlight source and a display apparatus. It relates to the field of display technology and solves the problem of poor display quality of the display apparatus. The backlight source comprises: a light guide plate; a light shielding tape arranged at a peripheral edge of a light emitting face of the light guide plate; a buffer layer arranged on the light shielding tape, wherein the buffer layer is provided with at least one lightening hole and/or at least one marking hole representing product information of the backlight source. The above backlight source may reduce the weight of the buffer layer by providing the lightening hole and/or marking hole on the buffer layer, so as to reduce the pressure of the buffer layer to the light shielding tape. In this way, the deformation in the light shielding tape is reduced so as to improve display quality of the display apparatus. 1. A backlight source , comprising:a light guide plate;a light shielding tape arranged at a peripheral edge of a light emitting face of the light guide plate;a buffer layer arranged on the light shielding tape,wherein the buffer layer is provided with at least one lightening hole and/or at least one marking hole representing product information of the backlight source.2. The backlight source according to claim 1 , wherein the lightening hole and/or marking hole are/is through hole(s) passing through the buffer layer in thickness.3. The backlight source according to claim 1 , wherein the lightening hole and/or marking hole are/is hole(s) which do/does not pass through the buffer layer in thickness.4. The backlight source according to claim 1 , wherein the lightening hole is a circular hole claim 1 , a rectangular hole or an elliptical hole.5. The backlight source according to claim 1 , wherein the buffer layer is arranged on the light shielding tape corresponding to a light incidence side of the light guide plate.6. The backlight source according to claim 1 , wherein ...

Chinese medicinal formulation for treating coronary heart disease and cerebral thrombosis

The invention discloses a Chinese medicinal formulation for treating coronary heart disease and cerebral thrombosis and aims to provide a Chinese medicinal formulation for treating coronary heart disease, cerebral thrombosis and myocardial infarction, which has the advantages of low cost, good use effect and less side effect. The invention adopts the technical scheme that the preparation method comprises the following steps: (1), preparing 120 g to 350 g of Panax ginseng, 400 g to 600 g of Rhizoma Ligustici Chuanxiong, 400 g to 600 g of Angelica sinensis, and 400 g to 600 g of Astragalus membranaceus, weighing 60% the prescription dose of Panax ginseng and 25% the prescription dose of Astragalus membranaceus, and grinding to 100 mesh fine powders; (2), grinding the remaining dose of Panax ginseng the remaining dose of Astragalus membranaceus and other medicinal materials to 10 mesh fine powders, decocting with water twice (2 to 3 hours each time), mixing decoctions, filtering, concentrating ...

Welding tool applied to barrel longitudinal circular seam pairing and welding work station

The invention relates to the technical field of welding and provides a welding tool applied to a barrel longitudinal circular seam pairing and welding work station. The tool comprises an outer ring and an inner ring; the outer ring comprises an outer left ring body and an outer right ring body; a connecting plate and a connecting supporting lug are welded between the outer left ring body and the outer right ring body; the inner ring comprises an inner left ring body and an inner right ring body; the inner left ring body and the inner right ring body are not sealed; a hooping hydraulic oil cylinder connecting two ends of the inner left ring body and the inner right ring body is arranged between the outer ring and the inner ring and at the opening positions of the inner left ring body and the inner right ring body; a pairing hydraulic oil cylinder is further connected between the inner left ring body and the inner right ring body; and the inner ring is connected with the connecting supporting ...

Two Ag<+> and SDS resistant xylanases

The invention relates to two Ag<+> and SDS resistant xylanases, and belongs to the technical field of biotechnology. The two Ag<+> and SDS resistant xylanases are produced from a fermentation broth of a streptomonospora sp. strain YIM 90494 with a preservation number of CCTCC NO.M 2012556. The two xylanases have molecular weights of 18KDa and 50KDa, enzyme activity reaction optimal temperatures of both 55 DEG C, and optimal reaction pH values of both 7.5. Under a pH range of 4.0-11.0, enzyme activities of the two are stable. Ag<+> and SDS provides activation effects upon the two enzymes. The two Ag<+> and SDS resistant xylanases provided by the invention can be widely applied in the industries such as papermaking, detergent, environmental protection, foodstuff, medicine, energy conversion, and feedstuff industry.

Separator head girth welding work station

The invention provides a separator head girth welding work station. The separator head girth welding work station comprises an outer girth welding device, an inner girth welding device, a gantry mechanism, a roller frame, a RGV transporting trolley and an operation table, wherein the outer girth welding device is arranged on the ground through a stand column and capable of sliding up and down along the stand column, the inner girth welding device is arranged at one side of the stand column, the gantry mechanism and the inner girth welding device are oppositely arranged at the other side of the stand column, the roller frame is arranged between the inner girth welding device and the gantry mechanism, the RGV transporting trolley is connected with the roller frame through a guide rail laid on the ground, and the operating table is arranged on the side, close to the inner girth welding device, of the ground. The separator head girth welding work station adopts automatic production technology ...

Barrel fire tube assembly workstation of heating furnace production line

The invention provides a barrel fire tube assembly workstation of a heating furnace production line. The barrel fire tube assembly workstation of the heating furnace production line structurally comprises a fire tube three-dimensional material bank, a fire tube assembly operation machine, a hydraulic station, a welding device and a control device, wherein the fire tube three-dimensional material bank is arranged between two stand columns of a workshop; the fire tube assembly operation machine comprises a horizontal walking mechanism, a lifting mechanism and a matched gripper; a conveying trolley goes to and fro between the fire tube three-dimensional material bank and the fire tube assembly operation machine; the gripper is used for gripping materials from the conveying trolley and pushing the materials into a barrel through a two-level telescopic mechanism, and adjustment of an assembly position is finished through the lifting mechanism. The hydraulic station is controlled by the control ...

Medicine composition for treating cardia-cerebrovascular diseases

The invention discloses a medicine composition for treating cardia-cerebrovascular diseases, comprising red peony root, Chinese hawthorn leaf, and Ligusticum wallichii. The medicine composition disclosed herein can clear heat and cool blood, activate blood circulation and promote qi circulation, disperse blood stasis and dredge collateral, and has good curative effect on congestive cerebrovascular disease.

Composited husking device

The invention discloses a composited husking device which is characterized in that a tire bead steel wire passes through a direct feed type husking wheel, then rounds a first rotary husking wheel and a second rotary husking wheel, then passes through a first steel wire wheel and a second steel wire wheel, and finally penetrates through a steel wire sleeve, and a third rotary husking wheel is arranged above the front end of the first rotary husking wheel, where the tire bead steel wire enters the first rotary husking wheel. Through the arrangement, the composited husking device is installed in a husking box to husk the tire bead steel wire with high efficiency and quality, so that the pre-treatment quality is improved, and the quality and the production efficiency of the steel wire are further improved.

Medicine composition for treating gout

The invention discloses a medicine composition for treating gout, comprising radix curcuma, fructus choerospondiatis, caulis akebiae and liquorice. The medicine composition disclosed herein can quickly alleviate clinical symptoms of patients and has the advantages of low price and no side effect.

Full-automatic slitting machine for bean products

The invention discloses a full-automatic slitting machine for bean products. The full-automatic slitting machine comprises a conveyor belt, a slitting area and a material receiving area, wherein a push-and-pull device is arranged above the conveyor belt, a receiving and buffering device is arranged between the push-and-pull device and the slitting area, and a vacuum cup is arranged above the slitting area. The full-automatic slitting machine provided by the invention solves the problem that slitting efficiency of the bean products is low in the prior art; multiple cylinders are used for driving the bean product on each station to move, the vacuum cup is used for sucking up the bean products to be slit, the bean products are prevented from being broken, after a forming die is moved away, the bean products are put to be slit, the whole slitting operation is full-automatically mechanically completed, labour cost of the bean product slitting operation is reduced, and production efficiency is ...

Automatic welding system

The invention provides an automatic welding system which is free of manual labor, stable in quality after forming and high in generation efficiency and lowers the cost. The automatic welding system comprises a supporting mechanism, an assembling mechanism and a controlling mechanism. The supporting mechanism is used for supporting, rotating and moving a cylinder and arranged at a using place. The assembling mechanism is used for performing pipe clamp conveying, positioning and welding, arranged at the using place and arranged at one end of the supporting mechanism. The controlling mechanism is connected with the supporting mechanism and the assembling mechanism. Pipe clamp conveying, positioning and welding are automatically performed through the automatic welding system, in the welding process, the cylinder is rotated through the supporting mechanism, and the welding position is automatically controlled.

Medicine composition for treating cardia-cerebrovascular diseases

The invention discloses a medicine composition for treating cardia-cerebrovascular diseases, comprising fructus choerospondiatis, pseudo-ginseng, and herba erigerontis. The medicine composition disclosed herein can clear heat and cool blood, activate blood circulation and promote qi circulation, disperse blood stasis and dredge collateral, and has good curative effect on congestive cerebrovascular disease.

Pipe cutting machine

The invention provides a pipe cutting machine. The pipe cutting machine comprises a bed body, a workpiece supporting table is arranged on the left side of the upper portion of the bed body, and a cutting supporting table is arranged on the right side of the upper portion of the bed body. The workpiece supporting table is provided with a guide mechanism and a clamp mechanism. The guide mechanism comprises a guide plate and guide rollers, the guide plate is vertically arranged, and a through hole allowing a pipe to pass through is formed in the center of the guide plate. The guide rollers are arranged around the through hole. The clamp mechanism comprises a hydraulic cylinder and clamping blocks, and the clamping blocks comprise the upper clamping block and the lower clamping block. The lower clamping block is fixed on the workpiece supporting table, the upper clamping block is connected with the hydraulic cylinder, and the hydraulic cylinder is fixed on the workpiece supporting table. The ...

Method for preparing active magnesium oxide

A method for preparing active magnesium oxide comprises the following steps: injecting a raw material of a magnesium chloride solution, and mixed gas of NH3 and CO2 into a hypergravity reactor, performing a rapid mixing reaction of the gas and the liquid under a hypergravity condition, wherein the magnesium chloride solution concentration is 0.2-0.5 mol/L, the volume ratio of NH3 to CO2 is (1.6-2.4):1, the reaction temperature is 70-80 DEG C, the hypergravity level is 150-960 g, performing reaction precipitation, filtration, washing, and drying to obtain an intermediate of basic magnesium carbonate, then calcining the basic magnesium carbonate at a temperature of 500-900 DEG C to obtain the active magnesium oxide. The invention can reach the requirement of rapid gas-liquid mixing so as to realize rapid microscopic uniform mixing under a condition with a high reaction solution solute concentration and a large processing capacity, and thus reach the homogeneous nucleation condition required ...

High-zinc leadless brass alloy and preparation method thereof

The invention relates to the field of leadless brass alloy and especially to an easily-cuttable corrosion-resistant high-zinc leadless brass alloy and a preparation method thereof. The alloy can be used to substitute machined lead brass alloy and is an excellent environment-friendly green metal material. The alloy comprises 57 to 63% of copper, 1 to 1 .5% of graphite, 0.05 to 2% of titanium, 0.001 to 0 .05% of aluminum, 0.001 to 0 .05% of boron, 0.02 to 0.06% of arsenic, 0.2 to 0.5% of iron, 0.1 to 0 .2% manganese and 0.001 to 0.07% of a rare earth element RE, with the balance being zinc. During melting, copper zinc alloy is melted at first, graphite and copper titanium intermediate alloy are added after copper zinc alloy is completely molten and are uniformly mixed with molten copper zinc alloy under stirring, then intermediate alloy of aluminum, boron, arsenic, iron, manganese and the rare earth element are sequentially added, stirring and slag removal are carried out, and gravity casting ...

Assembly workstation for cylinder rear sealing plate on production line of heating furnace

The invention provides an assembly workstation for a cylinder rear sealing plate on a production line of a heating furnace. The assembly workstation comprises a material storage rack, a rear sealing plate assembling device and a control device, wherein the material storage rack is used for placing the rear sealing plate; the rear sealing plate assembling device comprises a base track arranged on the ground of a workshop; a trolley matched with the base track is arranged on the base track; a material taking frame is arranged on the trolley and is arranged on the trolley in a liftable and rotatable manner; an overturning shaft capable of overturning forwards and backwards is arranged at the front end of the material taking frame; a rear sealing plate electromagnetic chuck and a cylinder circle checking clamping seat are arranged on the overturning shaft; the control device is used for controlling coordinated action and information exchange of all structural parts of the material storage rack ...

Heating furnace with automatic feeding device

The invention discloses a heating furnace with an automatic feeding device. The heating furnace comprises a furnace body and the automatic feeding device, and the automatic feeding device comprises a trolley rail, an RGV walking trolley, a sliding contact power supply system and a material hoisting device. The trolley rail is arranged at the bottom in the furnace body, the RGV walking trolley is arranged on the trolley rail, the sliding contact power supply system is arranged below the trolley rail, and the RGV walking trolley does horizontal motion along the trolley rail. The material hoisting device comprises a clamping piece and a clamping piece guide rail, the clamping piece guide rail is arranged on the upper portion in the furnace body, and the clamping piece does linear motion along the clamping piece guide rail. According to the heating furnace with the automatic feeding device, the RGV walking trolley is adopted to convey materials, and production efficiency of the heating furnace ...

Reliable Internet of things networking layout method

The invention discloses a reliable Internet of things networking layout method. A base station reader regularly scans mobile label terminals within the directional coverage of the base station reader in a single-node frequency modulation and hopping way, acquires mobile label user identifiers (ID), performs analysis to judge whether information is required to be transmitted to an upper computer or not, and dynamically updates a user register list in real time. In such a novel networking way, a high space coverage rate is realized on the basis of occupying an extremely small number of frequency resources, and the method is high in communication signal quality, low in bit error rate and simple and reliable in communication protocol; and the characteristic that space division multiple access and code division multiple access are easy to implement is effectively integrated on the basis of reserving the characteristics of high isolation among channels in the multi-carrier modulation of a frequency ...

Vehicle clutch driven plate with torsion damping and limiting functions

The invention discloses a vehicle clutch driven plate with a torsion damping and limiting functions. The vehicle clutch driven plate with the torsion damping and limiting functions comprises an outer disc hub, a driven piece, an upper vibration reduction disc, a lower vibration reduction disc, an inner disc hub and vibration reduction springs, wherein the outer disc hub is in rigid connection with the driven piece through an outer disc hub rivet, the upper vibration reduction disc, the lower vibration reduction disc and the inner disc hub are in rigid connection through a vibration reduction disc rivet, six spring windows are arranged at positions, corresponding to the upper vibration disc and the lower vibration reduction disc, of the outer disc hub, the vibration reduction springs are installed inside the windows, six bosses and six grooves are arranged at the position where the outer disc hub is combined with the inner disc hub, the bosses are correspondingly matched with the grooves ...

Method for indicating yaw navigation of airplane

The invention provides a method for indicating yaw navigation of an airplane. The method mainly comprises the following steps of: inputting yaw distance information on a control panel of an onboard display after receiving a yaw instruction emitted from an air traffic control centre; displaying an established air line, a yaw air line and a yaw distance value at the same time on a navigation map interface of the onboard display, wherein the displayed yaw air line is parallel to the established air line, and a real-time position of the airplane is displayed all the time on the navigation map interface; and regarding the yaw air line as a target yaw air line at the moment to facilitate a pilot to adjust the airplane to fly along the yaw air line according to the display information of the navigation map interface. According to the method disclosed by the invention, dependence on a ground navigation device is reduced; the navigation indication function of the airplane is completed; the security ...

Method for processing aviation electronic system warning information for general-purpose aircraft

The invention provides a method for processing aviation electronic system warning information, which is suitable for a general-purpose aircraft. The method comprises the steps of: (1) dividing equipment information required to be monitored in a general-purpose aircraft aviation electronic system into four classes, setting a warning information list on an airborne display, and respectively establishing corresponding warning processing tasks for the four classes of equipment information; (2) receiving messages sent by the warning processing tasks, judging whether the messages are key messages firstly, if so, directly turning to a step (4), otherwise, carrying out a next step; (3) judging whether the messages are adding warning messages, and if so, adding corresponding warning information into the warning information list, otherwise, indicating the messages to be deleting warning messages, and deleting corresponding warning information from the warning information list; and (4) sequencing ...

APPARATUS AND METHOD FOR TWO-STAGE LINEAR/NONLINEAR INTERFERENCE CANCELLATION

An apparatus and method for a two-stage linear/nonlinear interference cancellation comprising processing a receive signal to produce a first descrambled signal; and processing the first descrambled signal to produce a detected signal. In one aspect, a first interference canceller module is used for processing the received signal and a second interference canceller module is used for processing the first descrambled signal. In one aspect, the first interference canceller is a linear interference canceller (IC) and the second interference canceller is a linear/nonlinear interference canceller (IC). 1. A method for a two-stage linear/nonlinear interference cancellation comprising:processing a receive signal to produce a first descrambled signal; andprocessing the first descrambled signal to produce a detected signal.2. The method of wherein a first interference canceller module is used for processing the received signal and a second interference canceller module is used for processing the first descrambled signal.3. The method of wherein the first interference canceller is a linear interference canceller (IC).4. The method of wherein the second interference canceller is a linear/nonlinear interference canceller (IC).5. The method of wherein the first interference canceller operates at a chip level.6. The method of wherein the second interference canceller is a linear/nonlinear interference canceller (IC).7. The method of wherein the second interference canceller operates at a symbol level.8. The method of wherein the first interference canceller operates at a chip level and the second interference canceller operates at a symbol level.9. An apparatus for a two-stage linear/nonlinear interference cancellation claim 2 , the apparatus comprising a processor and a memory claim 2 , the memory containing program code executable by the processor for performing the following:processing a receive signal to produce a first descrambled signal; andprocessing the first descrambled ...

SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT

A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device. 1. A semiconductor device comprising: a plurality of trenches formed in the semiconductor layer, the plurality of trenches include active gate trenches located in an active area, gate runner/termination trenches and source pickup trenches located in a termination area outside the active area wherein a first conductive region is located at a bottom of the trenches and a second conductive region is located at a top of the active gate and gate runner/termination trenches, and wherein the first and second conductive regions are separated by an intermediate dielectric region;', 'a first electrical contact to the second conductive regions;', 'a second electrical contact to the first conductive region of the source pickup trenches located in the termination area; and', 'a source metal region connected to the second electrical contact and a gate metal region connected to the first electrical contact., 'a semiconductor layer;'}2. The semiconductor device of wherein the source pickup trench is located between two adjacent active areas.3. The semiconductor device of claim 2 , wherein the source pickup trench is surrounded by gate runner/termination trenches.4. The semiconductor device of wherein the gate runner/termination trench is asymmetrical claim 1 , ...

HIGHLY AVAILABLE SERVER SYSTEM BASED ON CLOUD COMPUTING

A highly available server system based on cloud computing comprises a central control management server, a cloud host server, a storage server and at least one application server; the central control management server is connected with at least one application server, and configured to respectively monitor at least one application server, if detecting that there exists an application server in the fault state among the at least one applications server, then the central control management server sends a first instruction message; the cloud host server is connected with the central control management server, and configured to receive the first instruction message, and call the target virtual machine image file from the storage server according to instructions of the first instruction message, and run the target virtual machine image file; the storage server is configured to store the corresponding virtual machine image file of at least one application server. 1. A highly available server system based on cloud computing , comprising:a central control management server, a cloud host server, a storage server and at least one application server; wherein:the central control management server is connected with the at least one application server, and configured to respectively monitor the at least one application server, if detecting that there exists an application server in the fault state among the at least one application server, then the central control management server send a first instruction message to the cloud host server;the cloud host server is connected with the central control management server, and configured to receive the first instruction message sent by the central control management server, and call a target virtual machine image file from the storage server according to the first instruction message, and run the target virtual machine image file; wherein the target virtual machine image file is a target virtual machine image file corresponding to the ...

MOSFET DEVICE AND FABRICATION

A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region. 1. A semiconductor device , comprising:a substrate;an active gate trench in the substrate;a source polysilicon pickup trench in the substrate;a polysilicon electrode disposed in the source polysilicon pickup trench; anda body region in the substrate; wherein:a top surface of the polysilicon electrode is below a bottom of the body region.2. The semiconductor device of claim 1 , further comprising a contact hole filled with a metal conductor extending from the polysilicon electrode to a source metal layer deposited on a top surface of the semiconductor device.3. The semiconductor device of claim 2 , wherein the contact hole is narrower in width than the polysilicon electrode.4. The semiconductor device of claim 1 , wherein the source polysilicon pickup trench is deeper than the active gate trench.5. The semiconductor device of claim 1 , wherein the source polysilicon pickup trench is narrower than the active gate trench.6. A method of fabricating a semiconductor device claim 1 , comprising:forming an active gate trench and a source polysilicon pickup trench in a substrate;forming an active gate electrode in the active gate trench and a polysilicon electrode in the source silicon pickup trench; andimplanting a body region; whereinthe polysilicon electrode has a top surface that is below a bottom of the body region.7. The method of claim 6 , further comprising:forming a contact hole above the a polysilicon electrode;filling the contact hole with a metal conductor;depositing a source metal layer on a top surface of the semiconductor device;the metal conductor extending from the polysilicon electrode to a source metal layer deposited on top ...

STACKED-GATE TRANSISTORS

The present disclosure relates to semiconductor structures and, more particularly, to stacked gate transistors and methods of manufacture. The structure includes a stacked gate structure having a plurality of transistors with at least one floating node and at least one node to either ground or a supply voltage, and a contact to either of the ground or supply voltage and the at least one floating node being devoid of any contact. 1. A structure comprising a stacked gate structure comprising a plurality of transistors with at least one floating node and at least one node to either ground or a supply voltage , and a contact to either of the ground or supply voltage and the at least one floating node being devoid of any contact.2. The structure of claim 1 , wherein the at least one floating node is a diffusion region.3. The structure of claim 2 , wherein the diffusion region is a doped epitaxial region.4. The structure of claim 3 , wherein the plurality of transistors are in series.5. The structure of claim 4 , wherein the plurality of transistors in series includes a first transistor having the node for the voltage and a last transistor having a node for the ground claim 4 , with separate contacts being provided to the nodes for the supply voltage and the ground claim 4 , respectively claim 4 , and any floating nodes being devoid of a contact.6. The structure of claim 5 , wherein the node for the supply voltage and the node for the ground are diffusion regions.7. The structure of claim 1 , wherein the transistors are NFETs in series.8. The structure of claim 1 , wherein the transistors are PFETs in series.9. The structure of claim 1 , wherein the transistors are finFETs.10. The structure of claim 9 , wherein the at least one floating node claim 9 , the node to ground and the node to the supply voltage are provided in a fin composed of substrate material.11. A structure comprising:multiple FET devices connected in series, including a first FET having a diffusion region ...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device. 1. A semiconductor device , comprising:a heavily doped semiconductor layer;an epitaxial layer of a first conductivity type formed on the semiconductor layer, the epitaxial layer including a first portion of the first conductivity type adjacent the semiconductor layer forming a field stop zone, and the epitaxial layer further including a second portion of the first conductivity type forming a base region, the field stop zone having a first side adjacent the semiconductor layer and a second side adjacent the base region, the base region having a first side adjacent the field stop zone and a second side opposite the first side; anda device region formed in the second side of the base region, the device region comprising at least one PN junction,wherein the first portion of the epitaxial layer forming the field stop zone has a doping profile of the first conductivity type including non-constant and varying doping levels within the first portion and the second portion of the epitaxial layer forming the base region has a constant doping level of the first conductivity type.2. The semiconductor device of claim 1 , wherein ...

REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE AND FABRICATION METHOD

An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. A method for fabricating a reverse conducting insulated gate bipolar transistor (RC-IGBT) device including a field stop zone , the method comprising:providing a first semiconductor substrate being lightly doped;forming, by an epitaxial process, a first epitaxial layer of a first conductivity type on the first semiconductor substrate, the first epitaxial layer having a constant doping level, the first epitaxial layer forming a base region of the RC-IGBT device;forming, by the epitaxial process, a second epitaxial layer of the first conductivity type on the first epitaxial layer, the second epitaxial layer having a doping profile including non-constant and varying doping levels, the second epitaxial layer forming a field stop zone of the RC-IGBT device;forming a buffer layer on the second epitaxial layer;forming, by ion implantation, first regions of the first conductivity type and second regions of a second conductivity type, opposite the first conductivity type, in the buffer layer;forming a bonding layer on the buffer layer;attaching a carrier wafer to the ...

SYSTEM FOR PREPARING ELECTRODE HAVING HIGH CYCLE EFFICIENCY, METHOD FOR PREPARING ELECTRODE HAVING HIGH CYCLE EFFICIENCY, AND APPLICATION THEREOF

The system comprises an electrode treatment unit; a temperature control treatment device () connected in series to the electrode treatment unit, the temperature control treatment device () comprising a temperature control vacuum treatment device () or a temperature control inert treatment device (); and a lift-off unit connected in series to the temperature control treatment device (). Or the system comprises an atmosphere box (), the interior of the atmosphere box () being vacuum, or an inert atmosphere and/or a protective atmosphere; and the electrode treatment unit provided inside the atmosphere box (), the temperature control box () connected in series to the electrode treatment unit, and the lift-off unit connected in series to the temperature control box (). The electrode treatment unit comprises a first metal source unwinding shaft (); a metal electrode unwinding shaft () to be supplemented and a compression roller device. 1. A system for manufacturing an electrode having high cycle efficiency , comprising:an electrode treatment unit;a temperature control treatment device in serial connection with the electrode treatment unit, comprising a temperature control vacuum treatment device or a temperature control inert treatment device; anda stripping unit in serial connection with the temperature control treatment device, which separates a first metal source after being press rolled and an electrode of a metal to be supplemented after being press rolled;wherein the electrode treatment unit comprises an unwinding shaft of the first metal source, for unwinding the first metal source; an unwinding shaft of the electrode of a metal to be supplemented in parallel connection with the unwinding shaft of the first metal source, for unwinding the electrode of a metal to be supplemented; and a press roller device in serial connection with the unwinding shaft of the first metal source and the unwinding shaft of the electrode of a metal to be supplemented, for press rolling ...

RATE MATCHING OF DATA TRANSMISSION IN CONTROL RESOURCE REGION

A control resource region of an New Radio system slot structure may be separated into control resource sets, only some of which may be used for control transmissions. Aspects presented herein improve the efficient utilization of resources by enabling data transmission in resources of the DL control resource region and/or the UL control resource region. A UE receives an indication of a control resource set in a control resource region of a slot that may provide a control channel resource or a data channel resource and performs rate matching for data transmissions in the data channel based at least in part on the indication. The indication may be a semi-static indication, e.g., RRC signaling, of the control resource set. 1. (canceled)2. A method of wireless communication by a user equipment (UE) , comprising:receiving, from a base station, a semi-static indication comprised in radio resource control (RRC) signaling, wherein the semi-static indication indicates a control resource set configured for the UE comprising at least one resource that may be used for a control channel transmission or a data channel transmission;receiving, from the base station, a dynamic indication comprised in downlink control information (DCI) that dynamically indicates that the at least one resource provided by the control resource set is used for the data channel transmission in a slot;receiving a downlink (DL) data transmission in the slot, wherein the DL data transmission includes the at least one resource dynamically indicated in the DCI; andperforming de-rate matching for the DL data transmission based at least in part on the semi-static indication and the dynamic indication.3. The method of claim 2 , wherein the semi-static indication comprises a bit mask that indicates the at least one resource of the control resource set which can be used for the control channel transmission or the data channel transmission.4. The method of claim 2 , wherein the semi-static indication is a UE- ...

FINFET WITH SHORTER FIN HEIGHT IN DRAIN REGION THAN SOURCE REGION AND RELATED METHOD

A FinFET includes a semiconductor fin, and a source region and a drain region in the same semiconductor fin. The drain region has a first fin height above a trench isolation; and the source region has a second fin height above the trench isolation. The first fin height is less than the second fin height. The FinFET may be used, for example, in a scaled laterally diffused metal-oxide semiconductor (LDMOS) application, and exhibits reduced parasitic capacitance for improved radio frequency (RF) performance. A drain extension region may have the first fin height, and a channel region may have the second fin height. A method of making the FinFET is also disclosed. 1. A laterally diffused metal-oxide semiconductor (LDMOS) fin-type field effect transistor (FinFET) , comprising:a semiconductor fin having a trench isolation adjacent thereto;a drain region in the semiconductor fin, the drain region having a first fin height above the trench isolation;a source region in the same semiconductor fin as the drain region, the source region having a second fin height above the trench isolation;a drain extension region in the same semiconductor fin as the source region and the drain region, the drain extension region having the first fin height above the trench isolation;a gate extending across the semiconductor fin; anda channel region under the gate in the same semiconductor fin as the source region and the drain region, the channel region positioned between the drain extension region and the source region, the channel region having the second fin height above the trench isolation.2. The LDMOS FinFET of claim 1 , wherein the first fin height is between 40% and 60% of the second fin height.3. The LDMOS FinFET of claim 1 , wherein the drain extension region is in an n-well in the semiconductor fin claim 1 , and the channel region is in a p-well in the semiconductor fin.4. The LDMOS FinFET of claim 3 , wherein a transition between the first fin height and the second fin height is ...

Dual band adaptive concurrent processing method and apparatus

Embodiments of the present invention provide a dual band adaptive concurrent processing method and apparatus. In the embodiments of the present invention, by using statistical information of a service at a first frequency band and a service at a service at a second frequency band in the N th adjustment period, service performance of the services at the frequency bands in the adjustment period may be acquired; and based on the statistical information, and a QoS requirement that the services at the two frequency bands need to meet, a second coefficient of proportionality between timeslots occupied by the services at the two frequency bands in the (N+1) th adjustment period may be determined, so that switching control on a first channel and a second channel may be performed in the (N+1) th adjustment period according to the determined second coefficient of proportionality.

SPECIFIC CONJUGATION LINKERS, SPECIFIC IMMUNOCONJUGATES THEREOF, METHODS OF MAKING AND USES SUCH CONJUGATES THEREOF

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)-or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders. 2. The bridge linker compound according to claim 1 , wherein Rcomprises at least one of alkylene claim 1 , alkenylene claim 1 , alkynylene claim 1 , ether claim 1 , polyoxyalkylene claim 1 , ester claim 1 , amine claim 1 , imine claim 1 , polyamine claim 1 , hydrazine claim 1 , hydrazone claim 1 , amide claim 1 , urea claim 1 , semicarbazide claim 1 , carbazide claim 1 , alkoxyamine claim 1 , alkoxylamine claim 1 , urethanes claim 1 , amino acid claim 1 , peptide claim 1 , acyloxylamine claim 1 , or hydroxamic acid.3. The bridge linker compound according to claim 1 , wherein Ror Ris independently a linear alkyl having from 1-6 carbon atoms claim 1 , or polyethyleneoxy unit of formula (OCHCH)p claim 1 , p=1-100.4. The bridge linker compound according to claim 1 , wherein Ror Ris cleavable by a protease.6. The bridge linker compound according to claim 1 , wherein mand mare independently an integer from 1 to 10.7. The bridge linker compound of wherein Zcomprises at least one of thiol claim 1 , disulfide claim 1 , amino claim 1 , carboxyl claim 1 , aldehyde claim 1 , ketone claim 1 , maleimido claim 1 , haloacetyl claim 1 , hydrazines claim 1 , alkoxyamino claim 1 , or hydroxy.8. The bridge linker compound of claim 1 , wherein Zcomprises at least one of N-hydroxysuccinimide ester claim 1 , p-nitrophenyl ester claim 1 , ...

Vehicle powertrain with onboard catalytic reformer

Catalyst compositions suitable for use in the exhaust gas recycle stream of an internal combustion engine are provided. Such catalyst compositions typically provide significant amounts of methane in addition to syngas. A reformer incorporating such a catalyst for use in an exhaust gas recycle portion of an internal combustion engine powertrain is described. A powertrain incorporating such a reformer, a method of increasing the octane rating of an exhaust gas recycle stream, and a method of operating an internal combustion engine using methane-assisted combustion are also described.

SYSTEM AND METHOD FOR SWITCHING BEAMFORMING MODES IN MILLIMETER WAVE SYSTEMS

A UE may be configured to communicate using one of analog beamforming or hybrid beamforming. The UE may receive a set of beamformed signals from a base station. The UE may determine a set of angular spread values associated with a set of clusters in a channel between the base station and the UE based on the set of beamformed signals received from the base station. The UE may transmit the set of angular spread values to the base station. The UE may receive, from the base station based on the set of angular spread values, a set of transmission ranks associated with at least one cluster of the set of clusters. The UE may communicate at least one data stream with the base station across the at least one cluster using the set of transmission ranks associated with the at least one cluster of the set of clusters. 1. An apparatus for wireless communication by a base station , the apparatus comprising:a memory; and determine a set of angular spread values associated with a set of clusters in a channel between the base station and a user equipment (UE);', 'determine a set of transmission ranks associated with at least one cluster of the set of clusters based on the set of angular spread values;', 'transmit the set of transmission ranks associated with the at least one cluster of the set of clusters to the UE; and', 'communicate at least one data stream with the UE across the at least one cluster using the set of transmission ranks associated with the at least one cluster of the set of clusters., 'at least one processor coupled to the memory and configured to2. The apparatus of claim 1 , wherein the at least one processor is further configured to:transmit a set of beamformed signals to the UE; andreceive, from the UE, information indicating the set of angular spread values based on the set of beamformed signals,wherein the set of angular spread values is determined based on the information indicating the set of angular spread values received from the UE.3. The apparatus of ...

DATA CHANNEL RESOURCE ALLOCATION

Wireless communications systems and methods related to allocating resource blocks and resource block groups in a system band in order to reduce overhead associated with resource allocation. To reduce overhead, the wireless communication device communicates a signal in a control channel that indicates a general area and a resource block in the general area that stores data. The wireless communication device then communicates multiple resource blocks that include the resource block and communicates the data in the resource block using the signal. To reduce overhead, the wireless communication device also communicates multiple mappings for each resource block group into a set of resource blocks and a signal in a control channel that selects one of the multiple mappings. The communication device then determines resource blocks that are included in the resource block group according to the mapping, and communicates data in these resource blocks. 1. A method for wireless communications , comprising:communicating, by a wireless communication device, a signal in a control channel that indicates a general area and at least one resource block in the general area that stores data;communicating a plurality of resource blocks that include the at least one resource block; andcommunicating data from the at least one resource block using the signal.2. The method of claim 1 , wherein the general area corresponds to a resource block group.3. The method of claim 2 , wherein the resource block group varies in size from other resource block groups that include resource blocks in the plurality of resource blocks.4. The method of claim 2 , wherein a number of resource blocks in the resource block group is a power of two.5. The method of claim 1 , wherein a number of resource blocks in the general area varies with an application that utilizes the data.6. The method of claim 1 , wherein the signal transmits a portion of a bitmap that indicates a location of the at least one resource block ...

CONJUGATION OF A CYTOTOXIC DRUG WITH BIS-LINKAGE

A conjugation of a cytotoxic drug to a cell-binding molecule with a bis-linker (dual-linker) as shown in Formula (I). Bis-linkage methods of making a conjugate of a cytotoxic drug/molecule to a cell-binding agent in a specific manner are also described, as well as application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease. 9. The conjugate compound according to claim 1 , wherein the cell-binding molecule is connected to Zand Zvia a pair of thiols formed from inter chain disulfide atoms of the cell-binding molecule.10. The conjugate compound according to claim 1 , wherein the cytotoxic molecule is selected from:(1). a chemotherapeutic agent selected from the group consisting of:a). an alkylating agent: selected from the group consisting of nitrogen mustards: chlorambucil, chlornaphazine, cyclophosphamide, dacarbazine, estramustine, ifosfamide, mechlorethamine, mechlorethamine oxide hydrochloride, mannomustine, mitobronitol, melphalan, mitolactol, pipobroman, novembichin, phenesterine, prednimustine, thiotepa, trofosfamide, uracil mustard; CC-1065 and adozelesin, carzelesin, bizelesin or their synthetic analogues; duocarmycin and its synthetic analogues, KW-2189, CBI-TMI, or CBI dimers; benzodiazepine dimers or pyrrolobenzodiazepine (PBD) dimers, tomaymycin dimers, indolinobenzodiazepine dimers, imidazobenzothiadiazepine dimers, or oxazolidinobenzodiazepine dimers; Nitrosoureas: comprising carmustine, lomustine, chlorozotocin, fotemustine, nimustine, ranimustine; Alkylsulphonates: comprising busulfan, treosulfan, improsulfan and piposulfan); Triazenes or dacarbazine; Platinum containing compounds: comprising carboplatin, cisplatin, and oxaliplatin; aziridines, benzodopa, carboquone, meturedopa, or uredopa; ethylenimines and methylamelamines including altretamine, triethylenemel-amine, trietylenephosphoramide, triethylenethiophosphoramide and trimethylolomelamine];b). a plant alkaloid: selected from the group ...

Plastic Frame Assembly, Backlight Source And Display Apparatus

The present disclosure discloses a plastic frame assembly. In one embodiment, the plastic frame assembly includes a plastic frame and a heat-conducting component which are formed in an integrated structure; wherein, the plastic frame includes an engagement structure configured to be engaged with an other component; and, the heat-conducting component includes a heat-conducting member and a plurality of protrusions protruded from a surface of the heat-conducting member, the protrusions being inserted into the plastic frame at the engagement structure thereof. The present disclosure also discloses a backlight source including this plastic frame assembly and a display apparatus including the abovementioned backlight source. 1. A plastic frame assembly , comprising a plastic frame and a heat-conducting component which are formed in an integrated structure; wherein , the plastic frame comprises an engagement structure configured to be engaged with an other component; and , the heat-conducting component comprises a heat-conducting member and a plurality of protrusions protruded from a surface of the heat-conducting member , the protrusions being inserted into the plastic frame at the engagement structure thereof.2. The plastic frame assembly of claim 1 , wherein claim 1 , the heat-conducting component further comprises a plurality of through holes formed in the surface of the heat-conducting member claim 1 , and claim 1 , at least one of the through holes is formed between two adjacent ones of the protrusions.3. The plastic frame assembly of claim 1 , wherein claim 1 , a thickness of the heat-conducting member is in a range of 0.1 mm-0.2 mm.4212. The plastic frame assembly of claim 1 , wherein claim 1 , a depth of insertion of the protrusion into the plastic frame meets the following relationship: 1/3h≦h≦h;{'b': 1', '2, 'in which, h is the depth of insertion of the protrusion into the plastic frame, and, h is a thickness of the engagement structure of the plastic frame.'} ...

DERIVATIVES OF AMANITA TOXINS AND THEIR CONJUGATION TO A CELL BINDING MOLECULE

The present invention is related to novel cytotoxic agents, derivatives of toxins of Formula (I), wherein , - - - , R, R, R, R, R, R, R, R, R, R, X, L, m, n and Q are defined herein, the preparation and the therapeutic uses in the targeted treatment of cancers, autoimmune disorders, and infectious diseases. 8. The compound according to claim 1 , wherein the linker L is selected from the group consisting of: R claim 1 , OR claim 1 , ORO claim 1 , NHR claim 1 , NHRNH claim 1 , NRR claim 1 , SRS claim 1 , ORNH claim 1 , ORAr claim 1 , NHRAr claim 1 , NRRNR′R″ claim 1 , —(CRR)(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)(CR′R″)(Aa)(OCHCH)— claim 1 , -(Aa)(CRR)(CR′R″)—(OCHCH) claim 1 , —(CRR)(CR′R″)(OCHCH)(Aa)- claim 1 , —(CRR)(CH═CH) (CR′R″)(Aa)(OCHCH) claim 1 , —(CRR)(NRCO)(Aa)(CR′R″)—(OCHCH) claim 1 , —(CRR)(Aa)(NHCO)(CR′R″)—(OCHCH)— claim 1 , (CRR)(OCO)(Aa)-(CR′R″)—(OCHCH) claim 1 , —(CRR)(OCNR)(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)(CO)-(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)(NRCO)(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)—(OCO)(Aa)(CR′R″)—(OCHCH) claim 1 , —(CRR)(OCNR)(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)(CO)(Aa)(CR′R″)(OCHCH) claim 1 , —(CRR)-phenyl-CO(Aa)(CR′R″) claim 1 , —(CRR)-furyl-CO-(Aa)(CR′R″) claim 1 , —(CRR)- oxazolyl-CO(Aa)(CR′R″) claim 1 , —(CRR)-thiazolyl-CO(Aa)(CR′R″) claim 1 , —(CRR)-thienyl-CO(CR′R″) claim 1 , —(CRR)-imidazolyl-CO—(CR′R″)— claim 1 , —(CRR)-morpholino-CO(Aa)(CR′R″)— claim 1 , —(CRR)-piperazino-CO(Aa)-(CR′R″)— claim 1 , —(CRR)—N-methylpiperazin-CO(Aa)(CR′R″)— claim 1 , —(CRR)(Aa)-phenyl- claim 1 , —(CRR)-(Aa)-furyl- claim 1 , —(CRR)-oxazolyl(Aa)- claim 1 , —(CRR)-thiazolyl-(Aa)- claim 1 , —(CRR)-thienyl-(Aa)- claim 1 , —(CRR)-imidazolyl(Aa)- claim 1 , —(CRR)-morpholino-(Aa)- claim 1 , —(CRR)-piperazino-(Aa)- claim 1 , —(CRR)—N-methylpiperazino-(Aa)- claim 1 , —K(CRR)-(Aa)(CR′R″)(OCHCH) claim 1 , —K(CRR)(CR′R″)(Aa)(OCHCH)— claim 1 , —K(Aa)(CRR)(CR′R″)—(OCHCH) claim 1 , —K(CRR)(CR′R″)(OCHCH)(Aa) claim 1 , —K(CRR)(CR═CR)(CR′R″)-(Aa)(OCHCH)— claim 1 , —K(CRR)(NRCO ...

TRAIN SPEED ESTIMATION DEVICE AND METHOD BASED ON VIBRATION SIGNALS

A train speed estimation device and method are disclosed. Vibration in a natural frequency band experienced by a train as it advances is sampled by means of first and second sensors at the same sampling frequency, to obtain a first set and a second set of sampling signals respectively; a first set and a second set of vibration signals are obtained on the basis of the first set and second set of sampling signals respectively, and the first set and second set of vibration signals are subjected to cross-correlation analysis, to obtain a target sampling difference; and a train speed is calculated on the basis of the target sampling difference. The train speed estimation device and method according to the present disclosure can precisely monitor the real-time train speed without relying on any speed sensor or GNSS.

REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region. 1. A reverse conducting insulated gate bipolar transistor (RC-IGBT) device , comprising:a semiconductor layer comprising one or more doped regions of a first conductivity type and being heavily doped, and one or more doped regions of a second conductivity type, opposite the first conductivity type;an epitaxial layer of the first conductivity type formed on the semiconductor layer, the epitaxial layer including a first portion of the first conductivity type adjacent the semiconductor layer forming a field stop zone, and the epitaxial layer including a second portion of the first conductivity type forming a base region, the field stop zone having a first side adjacent the semiconductor layer and a second side adjacent the base region, the base region having a first side adjacent the field stop zone and a second side opposite the first side;a body region of the second conductivity type formed in the second side of the base region;a source region of the first conductivity type formed in the body region;a gate dielectric layer and a conductive gate formed on the epitaxial layer at the second side of the base region,wherein the first portion of the epitaxial layer forming the ...

Method of Data Channel Resource Allocation in 5G

Wireless communications systems and methods related to allocating resource blocks and resource block groups in a system band in order to reduce overhead associated with resource allocation. To reduce overhead, the wireless communication device communicates a signal in a control channel that indicates a general area and a resource block in the general area that stores data. The wireless communication device then communicates multiple resource blocks that include the resource block and communicates the data in the resource block using the signal. To reduce overhead, the wireless communication device also communicates multiple mappings for each resource block group into a set of resource blocks and a signal in a control channel that selects one of the multiple mappings. The communication device then determines resource blocks that are included in the resource block group according to the mapping, and communicates data in these resource blocks. 1communicating, by a wireless communication device, a signal in a control channel that indicates a general area and at least one resource block in the general area that stores data;communicating a plurality of resource blocks that include the at least one resource block; andcommunicating data from the at least one resource block using the signal.. A method for wireless communications, comprising: The present application is a continuation application of U.S. Non-Provisional patent application Ser. No. 15/637,409, filed Jun. 29, 2017, which claims priority to and the benefit of the U.S. Provisional Patent Application No. 62/380,252, filed Aug. 26, 2016, which is hereby incorporated by reference in its entirety.The embodiments described herein relate to resource allocation, and more specifically to allocating resource blocks and resource block groups in a frequency band in order to reduce overhead.In conventional systems, user equipment (UE) is scheduled with a set of contiguously allocated localized resource blocks (RBs). ...

FLOATING SOLAR SYSTEM

A floating solar system, comprising a floating base having, a buoyance and a lower base frame coupled to the buoyance, a center frame coupled to the lower base frame, an anchor coupled to the lower base frame, a plurality of solar panels affixed to the lower base frame and the center frame to provide electrical power, a lightning rod coupled to the center frame and a lightning rod cap coupled to the lightning rod. 1. A floating solar system , comprising: a buoyance,', 'a lower base frame coupled to the buoyance, and', 'a center frame coupled to the lower base frame;, 'as floating base having;'}an anchor coupled to the lower base frame;a plurality of solar panels affixed to the lower base frame and the center frame to provide electrical power;a lightning rod coupled to the center frame; anda lightning rod cap coupled to the lightning rod.2. The floating solar system of wherein a shape of the floating base is one of square and round.3. The floating solar system of further comprising:a top plate coupled to the center frame; andat least one electro-mechanical encasement coupled to the center frame.4. The floating solar system of wherein at least one of the plurality of solar panels is hinged to the lower base frame and bolted to the top plate and wherein a shape of the plurality of solar panels is one of rectangular claim 3 , triangular claim 3 , and trapezoidal.5. The floating solar system of wherein the plurality of solar panels have a pyramidal shape of at least one of three and four sides.6. The floating solar system of further comprising at least one bypass diode electrically coupled to each of at least three of the plurality of solar panels claim 1 , the at least three of the plurality of solar panels are electrically coupled in parallel.7. The floating solar system of further comprising at least one bypass diode electrically coupled to each of at least four of the plurality of solar panels claim 1 , the at least lour of the plurality of solar panels are ...

LIGHT BAR, EDGE-TYPE BACKLIGHT MODULE AND DISPLAY DEVICE

A light bar, an edge-type backlight module and a display device. The light bar includes a circuit board and an integrated light emitting body arranged on the circuit board, wherein the integrated light emitting body includes a package and a plurality of light sources, and the package is configured to package the plurality of light sources. 1. A light bar , comprising: a circuit board and an integrated light emitting body arranged on the circuit board ,wherein the integrated light emitting body comprises a package and a plurality of light sources, and the package is configured to package the plurality of light sources.2. The light bar according to claim 1 , wherein a material of the package is a light permeable material.3. The light bar according to claim 1 , wherein the plurality of light sources are connected in parallel or in series.4. The light bar according to claim 1 , wherein the light source is an LED claim 1 , and a plurality of LEDs are packaged in a direct package way.5. The light bar according to claim 1 , wherein a light emitting surface of the integrated light emitting body is perpendicular to the circuit board claim 1 , a distance between the light emitting surface and an edge of the circuit board close to the light emitting surface is W1 claim 1 , and 0.3 mm≤W1≤1.0 mm.6. The light bar according to claim 1 , wherein along a length direction of the circuit board claim 1 , a distance between an edge of the integrated light emitting board and a close edge of the circuit board is L1 claim 1 , and L1>0.5 mm.7. The light bar according to claim 1 , wherein the integrated light emitting body is fixedly connected with the circuit board through a pad claim 1 , and a radius of the pad R≤0.3 mm.8. The light bar according to claim 1 , wherein a thickness of the circuit board is D1 claim 1 , and 0.06 mm≤D1≤0.12 mm.9. The light bar according to claim 1 , wherein a thickness of the integrated light emitting body is D2 claim 1 , and 0.3 mm≤D2≤0.6 mm.10. An edge-type ...

NOVEL HYDROPHILIC LINKERS AND LIGAND-DRUG CONJUGATES THEREOF

Hydrophilic linkers are useful for linking drugs to cell-binding ligands in ligand-drug conjugates, such as antibody-drug conjugates. The ligand-drug conjugate includes a cell-binding ligand capable of binding to a particular cell population, and a drug connected to the ligand by a hydrophilic linker. The hydrophilic linker includes one or more hydrophilic groups that render the linker hydrophilic. The hydrophilic linker may also include functional groups at the two termini for coupling to the drug and the cell-binding ligand respectively. 3. The conjugate of claim 2 , wherein the cell-binding ligand is an antibody claim 2 , a single chain antibody claim 2 , an antibody fragment that selectively binds to a target cell claim 2 , a monoclonal antibody claim 2 , a single chain monoclonal antibody claim 2 , a single chain monoclonal antibody fragment that selectively binds to a target cell claim 2 , a resurfaced monoclonal antibody claim 2 , a resurfaced single chain monoclonal antibody claim 2 , a resurfaced monoclonal antibody fragment that selectively binds to a target cell claim 2 , a chimeric antibody claim 2 , a single chain chimeric antibody claim 2 , a single chain chimeric antibody fragment that selectively binds to a target cell claim 2 , a humanized monoclonal antibody claim 2 , a humanized single chain monoclonal antibody claim 2 , a humanized monoclonal antibody fragment that selectively binds to a target cell claim 2 , an antibody mimic claim 2 , a lymphokine claim 2 , a hormone claim 2 , or a growth factor.4. The conjugate of claim 3 , wherein the antibody is trastuzumab claim 3 , pertuzumab claim 3 , rituximab claim 3 , ofatumumab claim 3 , tositumomab claim 3 , ibritumomab claim 3 , oregovomab claim 3 , edrecolomab claim 3 , cetuximab claim 3 , panitumumab claim 3 , nimotuzumab claim 3 , brentuximab claim 3 , gemtuzumab claim 3 , huMy9-6 claim 3 , etaracizumab claim 3 , alemtuzumab claim 3 , epratuzumab claim 3 , labetuzumab claim 3 , bivatuzumab claim ...

Backlight module and display device

A backlight module and a display device are provided. The backlight module includes a plastic frame and a light guiding plate provided within the plastic frame. For each non-incident side of two parallel non-incident sides of the plastic frame, a respective space-keeping structure is provided at an end of a side edge on the non-incident side, with the end of the side edge on the non-incident side being close to a side edge of an incident side; and a side of the space-keeping structure that is away from an end surface of the light guiding plate is sealed with a cover structure. The present arrangement can effectively reduce bright lines at side edges occurring in the backlight module, and thus improve image-display quality of the backlight module.

GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME

A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. These devices employ polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InGaN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. In one example, the tunnel field-effect transistor device includes a nanowire cylindrical gate-all-around geometry to achieve a high degree of gate electrostatic control. 1. A tunnel field-effect transistor comprising:a source-layer comprising p-type GaN;a drain-layer comprising n-type GaN;a gate; andan interlayer interfaced between the source-layer and the drain layer, wherein the interlayer comprises an InN layer,wherein the source layer, the drain-layer, and the interlayer are positioned linearly and the gate is positioned substantially around the source layer, the drain-layer, and the interlayer.2. The tunnel field-effect transistor of claim 1 , wherein source layer claim 1 , the drain-layer claim 1 , and the interlayer are arranged in a cylindrical nanowire configuration.3. The tunnel field-effect transistor of claim 1 , wherein the thickness of the interlayer is within the range of about 0.1 to 3.0 nanometers.4. The tunnel field-effect transistor of claim 1 , wherein the thickness of the interlayer is 1.7 nanometers for a gate width of 20 nanometers.5. A tunnel field-effect transistor comprising:a source-layer comprising p-type GaN;a drain-layer comprising n-type GaN; andan ...

NOVEL HYDROPHILIC LINKERS AND LIGAND-DRUG CONJUGATES THEREOF

Hydrophilic linkers are useful for linking drugs to cell-binding ligands in ligand-drug conjugates, such as antibody-drug conjugates. The ligand-drug conjugate includes a cell-binding ligand capable of binding to a particular cell population, and a drug connected to the ligand by a hydrophilic linker. The hydrophilic linker includes one or more hydrophilic groups that render the linker hydrophilic. The hydrophilic linker may also include functional groups at the two termini for coupling to the drug and the cell-binding ligand respectively. 2. The compound of claim 1 , wherein V is —N(SOOH)—.3. The compound of claim 1 , wherein V is —N[PO(OH)]—.4. The compound of claim 1 , wherein n is an integer from 1 to 50.5. The compound of claim 1 , wherein n is an integer from 1 to 10.6. The compound of claim 1 , wherein n is 1. This application is a division of U.S. application Ser. No. 15/558,917, filed on Sep. 15, 2017, entitled “NOVEL HYDROPHILIC LINKERS AND LIGAND-DRUG CONJUGATES THEREOF,” which is a national stage of PCT/162015/052011, filed on Mar. 19, 2015, the entire content of each of the prior applications is hereby incorporated by reference.The present invention relates to novel hydrophilic linkers that are useful for linking drugs (e.g., cytotoxic drugs) to cell-binding ligands (e.g., antibodies). The use of the hydrophilic linkers of the invention increases the potency and therapeutic index of the ligand-drug conjugates (e.g., antibody-drug conjugates). This is particularly effective when the hydrophilic linkers are used as non-cleavable ones. The present invention further relates to methods for preparing the novel hydrophilic linkers and the ligand-drug conjugates thereof.In order to reduce systemic toxicities, a promising approach to achieve targeted delivery of cytotoxic drugs to tumor cells is to use antibody-drug conjugates (ADCs) or other types of ligand-drug conjugates as self-guided tumor-targeting drugs. Antibody-drug conjugates, which combine the ...

Method of Robust Receive (Rx) Processing for Radio Frequency Coexistence Management in Dual-SIM-Dual-Active Communication Devices

The various embodiments include a dual-SIM-dual-active (DSDA) device and methods for implementing robust receive (Rx) processing to resolve radio frequency coexistence interference between two subscriptions operating on the DSDA device. The DSDA device may detect when a subscription (the “aggressor”) de-senses the other subscription (the “victim”) as a result of the aggressor's transmissions, and in response, implement robust Rx processing to mitigate the effects of de-sense on the victim while causing minimal impact to the aggressor. 1. A method for implementing a radio frequency (RF) co-existence management strategy on a dual-SIM dual active (DSDA) device between an aggressor communication activity (“aggressor”) and a victim communication activity (“victim”) , comprising:determining whether an RF interference event is detected;creating an RF co-existence management strategy in response to determining that an RF interference event is detected;determining whether to implement robust receive (Rx) processing as part of the RF co-existence management strategy; andimplementing robust Rx processing on the victim in response to determining to implement the robust Rx processing as part of the RF co-existence management strategy.2. The method of claim 1 , further comprising:determining whether the RF interference event is persisting;returning the victim and the aggressor to normal operations in response to determining that the RF interference event is not persisting; andcontinuing to implement the RF co-existence management strategy in response to determining that the RF interference event is persisting.3. The method of claim 1 , wherein determining whether an RF interference event is detected comprises:monitoring one or more sources of interference;calculating a total amount of interference power based on one or more sources of interference;determining whether the total amount of interference power exceeds a de-sense threshold; anddetermining that an RF interference event ...

Method of Robust Transmit (Tx) Processing for Radio Frequency Coexistence Management in Dual-SIM-Dual-Active communication Devices

The various embodiments include a dual-SIM-dual-active (DSDA) device and methods for implementing robust transmit (Tx) processing to resolve radio frequency coexistence interference between two subscriptions operating on the DSDA device. The DSDA device may detect when one subscription (the “aggressor”) de-senses the other subscription (the “victim”) as a result of the aggressor's transmissions, and in response, implement robust Tx processing to mitigate the effects of de-sense on the victim. 1. A method for implementing a radio frequency (RF) co-existence management strategy on a dual-SIM dual active (DSDA) device between an aggressor communication activity (an aggressor) and a victim communication activity (a victim) , comprising:determining whether an RF interference event is detected;creating an RF co-existence management strategy in response to determining that an RF interference event is detected;determining whether to implement robust transmit (Tx) processing as part of the RF co-existence management strategy; andimplementing the robust Tx processing on the aggressor in response to determining to implement robust Tx processing as part of the RF co-existence management strategy.2. The method of claim 1 , further comprising:determining whether the RF interference event is persisting;returning the victim and the aggressor to normal operations in response to determining that the RF interference event is not persisting; andcontinuing to implement the RF co-existence management strategy in response to determining that the RF interference event is persisting.3. The method of claim 1 , wherein determining whether an RF interference event is detected comprises:monitoring one or more sources of interference;calculating a total amount of interference power based on one or more sources of interference;determining whether the total amount of interference power exceeds a de-sense threshold; anddetermining that an RF interference event is detected when the total amount of ...

SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second. 1. A semiconductor device , comprising:a plurality of gate trenches formed into a semiconductor substrate in an active cell region, each gate trench having a portion of a first conductive material in lower portions of the gate trench and a portion of a second conductive material in upper portions of the gate trench; andone or more transitional trenches formed into the semiconductor substrate in a pickup region, each transitional trench having a portion of the first conductive material in lower portions of the transitional trench and a portion of the second conductive material in upper portion of the transitional trench, wherein the transitional trenches are provided between the plurality of gate trenches and one or more pickup trenches formed into the semiconductor substrate in a pickup region, wherein the portion of the first conductive material in the lower portions of the transitional trenches in a U shape,wherein the portions of the first conductive material in each gate trench and each transitional trench are separated from the ...

MOBILE TERMINAL MEDIUM CASING AND MOBILE TERMINAL

The disclosure provides a mobile terminal medium casing and a mobile terminal. The mobile terminal medium casing includes a casing body having a receiving groove; a reflective sheet, a light guiding plate and an optical sheet group laminated in order, in a direction away from a bottom of the receiving groove, on the bottom of the receiving groove; and a light source assembly located in the receiving groove, an illuminant of the light source assembly being located at a light incidence side of the light guiding plate. 1. A mobile terminal medium casing comprising:a casing body having a receiving groove;a reflective sheet, a light guiding plate and an optical sheet group laminated in order, in a direction apart away from a bottom of the receiving groove, on the bottom of the receiving groove; anda light source assembly in the receiving groove, an illuminant of the light source assembly being located at a light incidence side of the light guiding plate.2. The mobile terminal medium casing according to claim 1 , wherein the casing body is further provided with a through hole claim 1 , and a light source circuit board of the light source assembly passes through the through hole to be electrically connected with a power supply of the mobile terminal.3. The mobile terminal medium casing according to claim 1 , wherein a light source circuit board of the light source assembly is coupled to an edge of a light exiting surface of the light guiding plate and an edge of a wall of the receiving groove claim 1 , through a back adhesive.4. The mobile terminal medium casing according to claim 3 , wherein the mobile terminal medium casing further comprises a light blocking glue that covers the light source circuit board and an edge of the optical sheet group.5. The mobile terminal medium casing according to claim 4 , wherein the light blocking glue is a black double-sided adhesive or a black single-sided adhesive.6. The mobile terminal medium casing according to claim 1 , wherein walls ...

Gravure coating device for preparing large-width ultrathin metal lithium strip and method therefor

Provided are a gravure coating device for preparing a large-width ultrathin metal lithium strip and the preparation method, relating to the technical field of preparation of metal lithium materials. The device comprises: a lithium-melting tank ( 17 ), a micro-gravure roller ( 5 ), a unwinding device, a substrate back roller ( 7 ), a hot pressing device and a winding device; wherein the lower portion of the micro-gravure roller ( 5 ) is immersed into the liquid lithium in the lithium-melting tank ( 17 ); one side of the micro-gravure roller ( 5 ) is provided with a hot scraper ( 6 ), and the end portion of the hot scraper ( 6 ) is in contact with the surface of the micro-gravure roller ( 5 ); the substrate back roller ( 7 ) is arranged diagonally above the micro-gravure roller ( 5 ); the unwinding device is arranged on one side of the substrate back roller ( 7 ); the winding device is arranged above the substrate back roller ( 7 ); the hot pressing device is arranged between the substrate back roller ( 7 ) and the winding device; after passing through the substrate back roller ( 7 ) and the hot pressing device, the substrate on the unwinding device is winded onto the winding device. The device is simple in structure and reasonable in design, effectively improves the coating uniformity, and realizes automatic production of ultrathin metal lithium strips with a thickness of 1-50 μm, thereby greatly improving work efficiency and product quality.

A CROSS-LINKED PYRROLOBENZODIAZEPINE DIMER (PBD) DERIVATIVE AND ITS CONJUGATES

The present invention relates to novel cross-linked cytotoxic agents, pyrrolobenzodiazepine dimer (PBD) derivatives, and their conjugates to a cell-binding molecule, a method for preparation of the conjugates and the therapeutic use of the conjugates. 12Bacillus anthracisCanis lupus familiarisE. coliE. coliEscherichia coliPseudomonas aeruginosa. The cross-linked PBD dimer derivative or its conjugate to a cell-binding molecule according to claim 1 , wherein the cell binding molecule is capable of targeting against a tumor cell claim 1 , a virus infected cell claim 1 , a microorganism infected cell claim 1 , a parasite infected cell claim 1 , an autoimmune disease cell claim 1 , an activated tumor cells claim 1 , a myeloid cell claim 1 , an activated T-cell claim 1 , an affecting B cell claim 1 , or a melanocyte claim 1 , or any cells expressing any one of the following antigens or receptors: CD1 claim 1 , CD1a claim 1 , CD1b claim 1 , CD1c claim 1 , CD1d claim 1 , CD1e claim 1 , CD2 claim 1 , CD3 claim 1 , CD3d claim 1 , CD3e claim 1 , CD3g claim 1 , CD4 claim 1 , CD5 claim 1 , CD6 claim 1 , CD7 claim 1 , CD8 claim 1 , CD8a claim 1 , CD8b claim 1 , CD9 claim 1 , CD10 claim 1 , CD11a claim 1 , CD11b claim 1 , CD11c claim 1 , CD11d claim 1 , CD12w claim 1 , CD14 claim 1 , CD15 claim 1 , CD16 claim 1 , CD16a claim 1 , CD16b claim 1 , CDw17 claim 1 , CD18 claim 1 , CD19 claim 1 , CD20 claim 1 , CD21 claim 1 , CD22 claim 1 , CD23 claim 1 , CD24 claim 1 , CD25 claim 1 , CD26 claim 1 , CD27 claim 1 , CD28 claim 1 , CD29 claim 1 , CD30 claim 1 , CD31 claim 1 , CD32 claim 1 , CD32a claim 1 , CD32b claim 1 , CD33 claim 1 , CD34 claim 1 , CD35 claim 1 , CD36 claim 1 , CD37 claim 1 , CD38 claim 1 , CD39 claim 1 , CD40 claim 1 , CD41 claim 1 , CD42 claim 1 , CD42a claim 1 , CD42b claim 1 , CD42c claim 1 , CD42d claim 1 , CD43 claim 1 , CD44 claim 1 , CD45 claim 1 , CD46 claim 1 , CD47 claim 1 , CD48 claim 1 , CD49b claim 1 , CD49c claim 1 , CD49c claim 1 , CD49d claim 1 , CD49f ...

BEAD WIRE WRAPPER DEVICE AND A WRAPPER METHOD

The present invention discloses a bead wire wrapper device and a wrapper method. The bead wire wrapper device comprises a rack body; the rack body is provided with a winding unit, an H-shaped wheel assembly, a paper cutting mechanism, a paper guiding mechanism and a rubber applying mechanism; the winding unit comprises a first winding shaft and a second winding shaft; the H-shaped wheel assembly comprises an H-shaped wheel and a drive unit driving the H-shaped wheel to rotate; the paper cutting mechanism is configured to cut off film materials directly or indirectly fed by the winding unit; the paper guiding mechanism comprises a motion mechanism, the motion mechanism is provided with an adsorption assembly and a pressing assembly, the adsorption assembly is configured to adsorb the film materials through negative pressure and send the cut-off tail ends of the film materials to the H-shaped wheel under the action of the motion mechanism, and the pressing assembly is configured to move to the H-shaped wheel under the action of the motion mechanism and press the film materials; and the rubber applying mechanism is configured to paste rubber strips to the film materials on the H-shaped wheel. 111. A bead wire wrapper device , comprising a rack body () , wherein the rack body () is provided with:{'b': 2', '21', '22, 'a winding unit (), comprising a first winding shaft () and a second winding shaft ();'}{'b': 3', '31', '32', '31, 'an H-shaped wheel assembly (), comprising an H-shaped wheel () and a drive unit () driving the H-shaped wheel () to rotate;'}{'b': 4', '2, 'a paper cutting mechanism (), configured to cut off film materials directly or indirectly fed by the winding unit ();'}{'b': 5', '51', '51', '31', '51', '52', '53', '52', '31', '51', '53', '31', '51, 'a paper guiding mechanism (), comprising a motion mechanism (), where the motion mechanism () is configured to be adapted to reciprocate in a first direction and a second direction; the first direction is a ...

Techniques for using a cyclic redundancy check in conjunction with a low-density parity-check encoding scheme

Techniques are described for wireless communication at a wireless device. One method includes receiving a control channel and a data channel over a radio frequency spectrum, decoding the control channel, and decoding a packet received over the data channel. The control channel indicates a parameter of a codeblock group (CBG). The parameter of the CBG may indicate at least one of a number of codeblocks (CBs) associated with the CBG, a CBG size, or a combination thereof. The packet may include a set of CBGs. Each CBG of the set of CBGs may be associated with a set of encoded CBs and a CBG-level CRC. The associated CBG-level CRC for each CBG may be based at least in part on the parameter of the CBG. Each encoded CB may be encoded based at least in part on a low-density parity-check (LDPC) encoding scheme.

NATURAL GAS VEHICLE POWERTRAIN WITH ONBOARD CATALYTIC REFORMER

Catalyst compositions and methods for use of such catalyst composition in the exhaust gas recycle stream of an internal combustion engine for reforming of a methane-containing fuel are provided. A reformer incorporating such a catalyst for use in an exhaust gas recycle portion of an internal combustion engine powertrain is described. A powertrain incorporating such a reformer, a method of increasing the octane rating of an exhaust gas recycle stream, and a method of operating an internal combustion engine for methane combustion are also described. 1. A method for reforming a fuel in an internal combustion engine , said method comprising:(a) providing an exhaust gas-containing mixture to an exhaust gas recycle reformer, the exhaust gas recycle reformer comprising a reformer inlet, a reformer outlet, and a hydrocarbon-reforming catalyst composition, the exhaust gas-containing mixture comprising engine exhaust gas and a first hydrocarbon-containing fuel, the hydrocarbon-containing fuel comprising at least about 50 mol % methane, and(b) converting under reforming conditions at least a portion of the exhaust gas-containing mixture in the presence of the hydrocarbon-reforming catalyst composition comprising at least about 0.1 wt % of a hydrocarbon-reforming metal catalyst supported on a mixed metal oxide support, the mixed metal oxide support comprising at least about 20 wt % of a mixture of lanthanum oxide and aluminum oxide and at least about 10 wt % of a mixture of cerium oxide and zirconium oxide.2. The method of claim 1 , wherein the mixture of lanthanum oxide and aluminum oxide comprises about 0.4 wt % to about 15 wt % of lanthanum oxide based on the combined weight of lanthanum oxide and aluminum oxide claim 1 , wherein the mixed metal oxide support consists essentially of the mixture of lanthanum oxide and aluminum oxide and the mixture of cerium oxide and zirconium oxide claim 1 , or a combination thereof.3. The method of claim 1 , further comprising combusting a ...

Vehicle powertrain with onboard catalytic reformer

Catalyst compositions suitable for use in the exhaust gas recycle stream of an internal combustion engine are provided. Such catalyst compositions typically provide significant amounts of methane in addition to syngas. A reformer incorporating such a catalyst for use in an exhaust gas recycle portion of an internal combustion engine powertrain is described. A powertrain incorporating such a reformer, a method of increasing the octane rating of an exhaust gas recycle stream, and a method of operating an internal combustion engine using methane-assisted combustion are also described.

JET NOZZLE STRUCTURE OF IMPACT-TYPE FREEZER

A jet nozzle structure of an impact-type freezer includes an orifice plate, a plurality of diversion channels and a plurality of jet nozzles. A plurality of circular openings in a linear arrangement are uniformly distributed in the orifice plate. The diversion channel is a hollow truncated cone including a top opening connected to the circular opening and a bottom opening connected to an inlet of the jet nozzle. The jet nozzle is a hollow cylinder and it has an outlet. A distance between two adjacent circular openings is 40-100 mm, diameter of the circular opening is 30-80 mm, and a height of the diversion channel is 20-60 mm. An inner diameter and a height of the jet nozzle are 6-15 mm and 20-40 mm, respectively. A distance between the bottom opening of the jet nozzle and a conveyor belt is 10-100 mm. 1. A jet nozzle structure of an impact-type freezer , comprisingan orifice plate;a plurality of diversion channels; anda plurality of jet nozzles;wherein a plurality of circular openings in a linear arrangement are uniformly distributed in the orifice plate;the diversion channel is a hollow truncated cone comprising a top opening and a bottom opening; the top opening of the diversion channel is connected to the circular opening, and the bottom opening of the diversion channel is connected to an inlet of the jet nozzle; the jet nozzle is a hollow cylinder;a distance between two adjacent circular openings is 40-100 mm, a diameter of the circular opening is 30-80 mm, and a height of the diversion channel is 20-60 mm; an inner diameter of the jet nozzle is 6-15 mm and a height of the jet nozzle is 20-40 mm; a distance between the bottom opening of the jet nozzle and a conveyor belt arranged below the jet nozzle is 10-100 mm; and the distance between the two adjacent circular openings is a distance between geometric centers of two circular openings.2. The jet nozzle structure of claim 1 , wherein the distance between the two adjacent circular openings is 50-80 mm; the ...

SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second. 1. A semiconductor device , comprising:a plurality of gate trenches formed into a semiconductor substrate in an active cell region, each gate trench having a first conductive material in lower portions of the gate trench and a second conductive material in upper portions of the gate trench, wherein the first conductive material in the gate trench is separated from the semiconductor substrate by a first insulating layer, and wherein the second conductive material in the gate trench is separated from the semiconductor substrate by a second insulating layer and separated from the first conductive material in the gate trench by a third insulating layer; andone or more other trenches formed into the semiconductor substrate in a region other than the active cell region, wherein the one or more other trenches contain at least part of the first conductive material in a half U shape in lower portions of the one or more trenches and part of the second conductive material in upper portions of the one or more other trenches, and wherein the first ...

Shielded gate trench mos with improved source pickup layout

A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.

Dual Band Communication Method and WLAN Device

A dual band communication method and a wireless local area network (WLAN) device, First determining a service type of a service in a switching period according to a preset policy, where the switching period includes one first timeslot in which a first radio frequency (RF) channel works and one adjacent second timeslot in which a second RF channel works, and determining, according to the determined service type and a preset service quality requirement corresponding to the service type, maximum duration of the switching period in which the service quality requirement is met, and when time division multiplexing (TDM) is performed on a baseband processor, controlling the switching between the first RF channel and the second RF channel according to the maximum duration, hence actual duration of the switching period is less than or equal to the maximum duration. 1. A dual band communication method applied in a wireless local area network (WLAN) device , wherein the WLAN device comprises a baseband processor , a first radio frequency channel , and a second radio frequency channel , wherein the first radio frequency channel works at a first band , wherein the second radio frequency channel works at a second band , wherein the first radio frequency channel and the second radio frequency channel share the baseband processor in a time division multiplexing (TDM) manner , and wherein the TDM method comprises:determining a service type of a service in a switching period according to a preset policy, wherein the switching period comprises one first timeslot in which the first radio frequency channel works and one adjacent second timeslot in which the second radio frequency channel works, and wherein the service type is voice service, video service, or data service;determining, according to the determined service type and a preset service quality requirement corresponding to the service type, a maximum duration of the switching period in which the service quality requirement is ...

BACKLIGHT SOURCE AND DISPLAY APPARATUS COMPRISING THE SAME

The present disclosure provides a backlight source and a display apparatus. The backlight source comprises: a light guide plate and an adhesive frame. The light guide plate comprises: a light incidence face, a light exit face connected to the light incidence face, a bottom face opposed to the light exit face, and at least one lateral faces configured to connect the light exit face to the bottom face and to be inclined with respect to the bottom face, a projection of the at least one lateral faces with respect to the bottom face falling within the bottom face. The adhesive frame is located at a periphery of the light guide plate, wherein faces of the adhesive frame which face towards the respective lateral faces are matched with the respective lateral faces. 1. A backlight source comprising: a light incidence face,', 'a light exit face connected to the light incidence face,', 'a bottom face opposed to the light exit face, and', 'at least one lateral faces configured to connect the light exit face to the bottom face and to be inclined with respect to the bottom face, a projection of the at least one lateral faces with respect to the bottom face falling within the bottom face; and, 'a light guide plate comprisingan adhesive frame located at a periphery of the light guide plate,wherein faces of the adhesive frame which face towards the respective lateral faces are matched with the respective lateral faces.2. The backlight source according to claim 1 , wherein one of the at least one lateral faces is an inclined planar face claim 1 , an arc face or a wave-shaped face.3. The backlight source according to claim 1 , wherein all of the at least one lateral faces are configured as any combination composed of an inclined planar face claim 1 , an arc face and a wave-shaped face.4. The backlight source according to claim 2 , wherein the lateral faces have an inclination angle of greater than 0° and less than 90° with respect to the bottom face when the lateral faces are planar ...

BACKLIGHT MODULE AND DISPLAY DEVICE

A backlight module and a display device are provided. The backlight module comprises a light guide plate, a sealant frame enclosing edges of the light guide plate, and a light source disposed at an end of the light guide plate. The light guide plate has a near light end near the light source and a far light end further away from the light source. The light guide plate includes at least one first positioning structure at the far light end. The sealant frame includes at least a second positioning structure disposed at a position corresponding to the first positioning structure at the far light end. The first positioning structure and the second positioning structure are engaged with each other to position the light guide plate on a plane parallel to a light emitting surface of the light guide plate. 1. A backlight module comprisinga light guide plate,a sealant frame enclosing edges of the light guide plate, anda light source disposed at an end of the light guide plate,wherein the light guide plate has a near light end near the light source and a far light end further away from the light source, the light guide plate comprises at least one first positioning structure at the far light end, the sealant frame comprises at least a second positioning structure disposed at a position corresponding to the first positioning structure at the far light end, and the first positioning structure and the second positioning structure are engaged with each other to position the light guide plate on a plane parallel to a light emitting surface of the light guide plate.2. The backlight module according to claim 1 , wherein the first positioning structure is a snap lug protruded from an end surface of the far light end claim 1 , and the second positioning structure is an “L” shape groove into which the snap lug is inserted.3. The backlight module according to claim 2 , wherein the groove has a depth greater than a thickness of the light guide plate by 0.03 mm˜0.1 mm.4. The backlight ...

BACKLIGHT BACK PLATE, ADHESIVE- METAL INTEGRATED STRUCTURE OF BACKLIGHT SOURCE, BACKLIGHT SOURCE, AND DISPLAY PANEL

The present disclosure relates to the field of display design, and in particular to a backlight back plate, an adhesive-metal integrated structure of the backlight source, a backlight source and a display panel. The backlight back plate includes a bottom plate and protrusions. The protrusions are arranged at an opening at a side edge of the bottom plate, which are arranged on the bottom plate and extend into an adhesive that forms an integral structure with the backlight back plate by an injection molding and being provided with a hole into which the adhesive is filled. 1. A backlight back plate , comprisinga bottom plate, wherein an opening is arranged at a side edge of the bottom plate,wherein a protrusion that extends from a surface of the bottom plate in a first direction is arranged at at least one side edge of the opening of the bottom plate,the protrusion extends into an adhesive that forms an integral structure with the backlight back plate by an injection molding, and at least one hole, into which the adhesive is filled, is arranged in the protrusion, andthe first direction faces toward the adhesive.2. The backlight back plate according to claim 1 , wherein the hole in each protrusion claim 1 , into which the adhesive is filled claim 1 , is a through hole or a blind hole.3. The backlight back plate according to claim 1 , wherein the hole in each protrusion is circular claim 1 , elliptical or polygonal.4. The backlight back plate according to claim 3 , wherein the hole in each protrusion is circular claim 3 , a first projection of a diameter of the hole in a direction perpendicular to the back plate is at most three quarters of a second projection of a distance from a top of the protrusion to a surface of the back plate at a side thereof away from the protrusion in the direction perpendicular to the back plate.5. The backlight back plate according to claim 4 , wherein the first projection of the diameter of the circular hole in the direction perpendicular to ...

POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON PITCHES BETWEEN TRENCHES

This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches. 1. A semiconductor power device disposed in a semiconductor substrate including an active cell area and a termination area wherein the semiconductor power device further comprising:a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer; andmesa areas of the semiconductor substrate disposed between the gate trenches wherein all the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material sticking out above all the recessed mesa areas in the active cell area between the gate trenches.2. The semiconductor power device of further comprising:a low temperature oxide (LTO) spacer layer attached to sidewalls of the HDP insulation layer sticking out above all the recessed mesa ...

SHADING TAPE, BACKLIGHT UNIT AND DISPLAY DEVICE

The disclosure relates to a shading tape, a backlight unit and a display device. The shading tape includes: a tape body; a buffer layer located at a side of the tape body and provided with a through groove running through the buffer layer in a direction perpendicular to the tape body; a heat dissipating component located in the through groove; and a sealing layer located at a side of the buffer layer far away from the tape body and configured to close an opening of the through groove at the side of the buffer layer far away from the tape body. 1. A shading tape , comprising:a tape body;a buffer layer located at a side of the tape body and provided with a through groove running through the buffer layer in a direction perpendicular to the tape body;a heat dissipating component located in the through groove; anda sealing layer located at a side of the buffer layer far away from the tape body and configured to close an opening of the through groove at the side of the buffer layer far away from the tape body.2. The shading tape according to claim 1 , wherein the buffer layer is a foam layer.3. The shading tape according to claim 2 , wherein the buffer layer is strip-shaped foam claim 2 , the through groove is a strip-shaped through groove claim 2 , and the strip-shaped foam comprises a first side wall claim 2 , a second side wall claim 2 , a third side wall and a fourth side wall perpendicular to the tape body claim 2 , the first side wall is opposite to the third side wall claim 2 , and the second side wall is opposite to the fourth side wall.4. The shading tape according to claim 3 , wherein a size of the strip-shaped foam in a direction perpendicular to the tape body is greater than or equal to 0.06 mm and less than or equal to 0.2 mm;a size of the heat dissipating component in the direction perpendicular to the tape body is less than or equal to the size of the strip-shaped foam in the direction perpendicular to the tape body.5. The shading tape according to claim 3 ...

Rate matching of data transmission in control resource region

A control resource region of an New Radio system slot structure may be separated into control resource sets, only some of which may be used for control transmissions. Aspects presented herein improve the efficient utilization of resources by enabling data transmission in resources of the DL control resource region and/or the UL control resource region. A UE receives an indication of a control resource set in a control resource region of a slot that may provide a control channel resource or a data channel resource and performs rate matching for data transmissions in the data channel based at least in part on the indication. The indication may be a semi-static indication, e.g., RRC signaling, of the control resource set.

TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a semiconductor body, a first source/drain region includes an epitaxial semiconductor layer on a first portion of the semiconductor body, and a second source/drain region is positioned in a second portion of the semiconductor body. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure. The first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width. 1. A structure for a field-effect transistor , the structure comprising:a semiconductor body;a first gate structure that extends over the semiconductor body, the first gate structure including a first sidewall and a second sidewall opposite the first sidewall;a first source/drain region including an epitaxial semiconductor layer on a first portion of the semiconductor body, the first source/drain region positioned adjacent to the first sidewall of the first gate structure; anda second source/drain region in a second portion of the semiconductor body, the second source/drain region positioned adjacent to the second sidewall of the first gate structure,wherein the first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width.2. The structure of wherein the semiconductor body is a fin.3. The structure of wherein the fin has a top surface claim 2 , and the second source/drain region is formed in the second portion of the fin entirely below the top surface of the fin.4. The structure of wherein the epitaxial semiconductor layer of the first source/drain region is formed in a cavity in the first portion of ...

BACKLIGHT SOURCE AND DISPLAY DEVICE

The present disclosure provides a backlight source and a display device. The backlight source includes a back plate, a light bar and a rubber strip. The back plate is made of a metal material and includes a base, one first side portion and three second side portions, wherein the first side portion and the three second side portions are connected to the base and arranged at four sides of the base respectively. The first side portion includes a parallel part which is parallel to the base and a connection part which connects the parallel part to the base. The light bar is fixed on the parallel part. The rubber strip is fixed on at least one of the second side portions. An upper surface of the rubber strip and a surface of the parallel part form a support surface. 1. A backlight source , comprising a back plate , a light bar and a rubber strip; wherein:the back plate is made of a metal material and comprises a base, one first side portion and three second side portions, wherein the first side portion and the three second side portions are connected to the base and arranged at four sides of the base respectively, and the first side portion comprises a parallel part which is parallel to the base and a connection part which connects the parallel part to the base;the light bar is fixed on the parallel part;the rubber strip is fixed on at least one of the second side portions; andan upper surface of the rubber strip and a surface of the parallel part form a support surface.2. The backlight source according to claim 1 , wherein the rubber strip is fixed on the second side portion opposite to the first side portion.3. The backlight source according to claim 1 , wherein the rubber strip is fixed on one or two second side portions adjacent to the first side portion.4. The backlight source according to claim 1 , wherein the rubber strips are fixed on a second side portion opposite to the first side portion and one or two second side portions adjacent to the first side portion ...

TRANSISTORS WITH ASYMMETRICALLY-POSITIONED SOURCE/DRAIN REGIONS

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over a semiconductor body. The first gate structure includes a first sidewall and a second sidewall opposite the first sidewall, and the second gate structure includes a sidewall adjacent to the first sidewall of the first gate structure. A first source/drain region includes a first epitaxial semiconductor layer positioned between the first sidewall of the first gate structure and the sidewall of the second gate structure. A second source/drain region includes a second epitaxial semiconductor layer positioned adjacent to the second sidewall of the first gate structure. The first sidewall of the first gate structure and the sidewall of the second gate structure are separated by a distance that is greater than a width of the first epitaxial semiconductor layer. 1. A structure for a field-effect transistor , the structure comprising:a semiconductor fin;a first gate structure that extends over the semiconductor fin, the first gate structure including a first sidewall and a second sidewall opposite the first sidewall;a second gate structure that extends over the semiconductor fin, the second gate structure including a sidewall adjacent to the first sidewall of the first gate structure;a first L-shaped spacer including a first section on the first sidewall of the first gate structure and a second section extending laterally from the first section, the first section and the second section of the first L-shaped spacer having a uniform thickness;a second L-shaped spacer including a first section on the sidewall of the second gate structure and a second section extending laterally over the first section, the first section and the second section of the second L-shaped spacer having a uniform thickness;a first source/drain region including a first epitaxial semiconductor layer positioned between the second section of the first L- ...

Specific conjugation linkers, specific immunoconjugates thereof, methods of making and uses such conjugates thereof

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

FLEXIBLE INTERLEAVING FOR WIRELESS COMMUNICATIONS

Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions. 1. (canceled)2. A method for wireless communications at a base station , comprising:establishing a communication link over a channel with a user equipment (UE);determining a deployment characteristic of the channel or a transmission characteristic of a transmission associated with the UE or a combination thereof;determining one of a time domain interleaving pattern or a frequency domain interleaving pattern for a tone-group level interleaving configuration for the transmission associated with the UE;determining the tone-group level interleaving configuration for the transmission based at least in part on the deployment characteristic of the channel or the transmission characteristic of the transmission or on the combination thereof; andtransmitting, to the UE, an indication of the tone-group level interleaving configuration.3. The method of claim 2 , wherein determining the tone-group level interleaving configuration comprises:determining a number of tones in each group of tones of a tone-group ...

FLEXIBLE INTERLEAVING FOR WIRELESS COMMUNICATIONS

Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions. 1. A method for wireless communications , comprising:establishing a communication link over a channel with a user equipment (UE);determining a tone-group level interleaving configuration for a transmission associated with the UE based at least in part on a deployment characteristic of the channel or a transmission characteristic of the transmission; andtransmitting, to the UE, an indication of the tone-group level interleaving configuration.2. The method of claim 1 , wherein determining the tone-group level interleaving configuration comprises:determining to enable or disable tone-group level interleaving for the UE based at least in part on a condition of the channel.3. The method of claim 2 , further comprising:enabling tone-group level interleaving for the UE;receiving, from the UE, one or more code blocks via resources of the channel; andde-interleaving the one or more code blocks based at least in part on the tone-group level interleaving configuration.4. The method of claim 1 , wherein the ...

BACKLIGHT MODULE, DISPLAY PANEL AND DISPLAY DEVICE

A backlight module, a display panel and a display device are provided, and the backlight module includes a sealant frame (), a reflecting plate () which is provided within the sealant frame () and has a reflective surface (), and a light guide plate () which is arranged on the reflecting plate () and has a light exit surface () and a light transmission surface () opposite to each other as well as a light entrance surface () connecting the light exit surface () and the light transmission surface (); and an end, where the light entrance surface () is located, of the light guide plate () is provided with at least one lap joint portion () arranged, in a lap joint manner, on the sealant frame () and extending toward the sealant frame () that the end faces, and the light transmission surface () and the reflective surface () of the reflecting plate () form a gap layer therebetween. The backlight module can avoid the problems of Newton rings occurred between the light guide plate () and the reflecting plate () and the occurrence of wavy warpage of the reflecting plate () under a high temperature. 1. A backlight module , comprising a sealant frame , a reflecting plate provided within the sealant frame , and a light guide plate provided on the reflecting plate , whereinthe reflecting plate has a reflective surface, the light guide plate has a light exit surface, a light transmission surface and a light entrance surface, the light exit surface is opposite to the light transmission surface, and the light entrance surface is an end face connecting the light exit surface and the light transmission surface; andan end, where the light entrance surface is located, of the light guide plate is provided with at least one lap joint portion which extends toward the sealant frame that the end faces, the lap joint portion is arranged on the sealant frame in a lap joint manner, and a gap layer is formed between the light transmission surface and the reflective surface of the reflecting ...

LDMOS FINFET STRUCTURE WITH BURIED INSULATOR LAYER AND METHOD FOR FORMING SAME

Integrated circuit (IC) structures including buried insulator layer and methods for forming are provided. In a non-limiting example, a IC structure includes: a substrate; a first fin over the substrate; a source region and a drain region in the first fin; a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; and a buried insulator layer including a portion disposed under the first fin. 1. An integrated circuit (IC) structure , comprising:a substrate;a first fin over the substrate;a source region and a drain region in the first fin;a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; anda buried insulator layer including a portion disposed under the first fin.2. The IC structure of claim 1 , further comprising:a second fin over the substrate, wherein the first gate and the second gate structures are disposed over the first fin and the second fin.3. The IC structure of claim 1 , further comprising a second fin over the substrate and adjacent to the first fin claim 1 , wherein the buried insulator layer includes a lowermost extent that is below a lowermost extent of the second fin.4. The IC structure of claim 1 , wherein the first fin has a fin length claim 1 , and the buried insulator layer has a lateral length that is substantially the same as the fin length of the first fin.5. The IC structure of claim 1 , further comprising:a first well in the substrate and including a first type of dopant; anda second well in the substrate and laterally adjacent to the first well, the second well including a second type of dopant that is different from the first type of dopant.6. The IC structure of claim 5 , wherein the buried insulator layer is disposed above the first and the second wells and below the source and the drain regions.7. The IC ...

SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS

This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate. 1. A semiconductor power device comprising:gate trenches having recessed gate electrodes disposed below a top insulation plug protruding above a top surface of a semiconductor substrate wherein the top insulation plug in the gate trenches extending above and defining a substantially flat protuberance top surface recessed below the top insulation plug and extending between the gate trenches wherein the protuberance top surface protruding above the gate electrodes covered under the top insulation plug;body regions disposed near the protuberance top surface encompassing source regions disposed below the protuberance top surface surrounded and defined by the top insulation plug extended above the gate trenches;a silicide layer is formed over an entire area of the protuberance top surface for contacting both the source and body regions and the silicide layer is further disposed on top of the recessed gate electrode under the top insulation plug.2. The device of further comprising:a shield electrode disposed below the gate electrode in the gate trenches and an inter-electrode-dielectric separating the shield and gate electrodes whereby the device constituting a shield gate trench (SGT) MOSFET.3. The device of further comprising:the silicide disposed on top of the recessed gate ...

CONJUGATION LINKERS, CELL BINDING MOLECULE-DRUG CONJUGATES CONTAINING THE LINKERS, METHODS OF MAKING AND USES SUCH CONJUGATES WITH THE LINKERS

The present invention relates to linkers having a group of propiolyl, substituted acryl(acryloyl), or disubstituted propanoyl, and using such linkers for the conjugation of compounds, in particular, cytotoxic agents to a cell-binding molecule.

Opportunistic Mobile Receive Diversity (OMRD) in a Dual-SIM Dual-Active (DSDA) Device

Methods and devices are disclosed for implementing opportunistic mobile receive diversity (“OMRD”) on a multi-SIM wireless device. The wireless device may receive a request from a protocol stack associated with the first SIM to utilize the second RF resource for receive diversity, and determine whether a protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM. Upon determining that the protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM, the wireless device may grant control of the second RF resource to the protocol stack associated with the first SIM. Granting control may provide, to the protocol stack associated with the first SIM, a capability to enable and disable receive diversity using the first and second RF resources.

SPECIFIC CONJUGATION LINKERS, SPECIFIC IMMUNOCONJUGATES THEREOF, METHODS OF MAKING AND USES SUCH CONJUGATES THEREOF

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders. 2. The compound of claim 1 , wherein the cell-binding agent is selected from the group consisting of an antibody claim 1 , a protein claim 1 , a vitamin claim 1 , a peptide claim 1 , a polymeric micelle claim 1 , a liposome claim 1 , a lipoprotein-based drug carrier claim 1 , a nano-particle drug carrier claim 1 , a dendrimer claim 1 , a molecule coated with any of said above cell-binding agents claim 1 , and a combination thereof.3. The compound of claim 1 , wherein the cell-binding agent is an antibody claim 1 , full-length antibodies: polyclonal antibodies claim 1 , monoclonal antibodies claim 1 , dimers claim 1 , multimers claim 1 , multispecific antibodies: bispecific or trispecific antibodies; a single chain antibody claim 1 , an antibody fragment that binds to the target cell claim 1 , a monoclonal antibody claim 1 , a single chain monoclonal antibody claim 1 , or a monoclonal antibody fragment that binds the target cell claim 1 , a chimeric antibody claim 1 , a chimeric antibody fragment that binds to the target cell claim 1 , a domain antibody claim 1 , a domain antibody fragment that binds to the target cell claim 1 , a resurfaced antibody claim 1 , a resurfaced single chain antibody claim 1 , or a resurfaced antibody fragment that binds to the target cell claim 1 , a humanized antibody or a resurfaced antibody ...

SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS

This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate. 1. A shield gate trench (SGT) MOSFET having a wide trench comprising:a shield electrode at the bottom of the trench;a dielectric protuberance in the center of the wide trench above the shield electrode;an inter-electrode-dielectric (IED) over the shield electrode on both sides of the dielectric protuberance; andan inner and an outer top electrode located over the IED on opposite sides of the dielectric protuberance.2. The SGT MOSFET of further comprising a shield contact formed through the dielectric protuberance to contact the shield electrode.3. The SGT MOSFET of further comprising a protrusion in the wide trench so that the shield contact can contact a source metal.4. The SGT MOSFET of wherein the top electrode closest to the active area is at gate potential.5. The SGT MOSFET of wherein the top electrode closest to the die edge is at drain potential.6. A method of forming a shield gate trench (SGT) MOSFET with source body shorting silicide comprising:forming trenches with semiconductor protuberances in between;forming bottom dielectric layer in bottom of trench;forming shield electrode at bottom of trench, shield electrode being surrounded at sides and bottom by bottom dielectric layer;forming inter-electrode-dielectric over the shield electrode;forming gate dielectric ...

SPECIFIC CONJUGATION LINKERS, SPECIFIC IMMUNOCONJUGATES THEREOF, METHODS OF MAKING AND USES SUCH CONJUGATES THEREOF

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders. 2. The compound of claim 1 , wherein the leaving group is a halide claim 1 , methanesulfonyl claim 1 , toluenesulfonyl claim 1 , trifluoromethyl-sulfonyl claim 1 , trifluoromethylsulfonate claim 1 , nitrophenoxyl claim 1 , N-succinimidyloxyl claim 1 , phenoxyl; dinitrophenoxyl; pentafluorophenoxyl claim 1 , tetrafluorophenoxyl claim 1 , trifluorophenoxyl claim 1 , difluorophenoxyl claim 1 , monofluorophenoxyl claim 1 , pentachlorophenoxyl claim 1 , 1H-imidazole-1-yl claim 1 , chlorophenoxyl claim 1 , dichlorophenoxyl claim 1 , trichlorophenoxyl claim 1 , tetrachlorophenoxyl claim 1 , N-(benzotriazolyl)oxyl claim 1 , 2-ethyl-5-phenylisoxazolium-yl claim 1 , 2-ethyl-5-phenylisoxazolium-3′-sulfonyl claim 1 , phenyloxadiazolyl claim 1 , phenyloxadiazole-sulfonyl claim 1 , oxadiazolyl claim 1 , or an intermediate molecule generated of any of above with a condensation reagent for Mitsunobu reactions.3. The compound of claim 1 , wherein the leaving group is a halide claim 1 , methanesulfonyl claim 1 , p-toluenesulfonyl claim 1 , trifluoromethyl sulfonyl claim 1 , and trifluoromethylsulfonate.4. The compound of claim 1 , wherein the leaving group is bromide or iodide.5. The compound of claim 1 , wherein: (i) represents a single bond claim 1 , both U and U′ are bromide or iodide; (ii) represents a double bond claim 1 , both U and ...

BACKLIGHT UNIT AND DISPLAY DEVICE

A backlight unit includes a backplane and a light guide plate. The backplane includes a body section and a bending section connected with the body section; the body section includes a first surface and a second surface opposite to each other; the bending section includes at least a connecting portion and a mounting portion extended from the connecting portion and opposite to the first surface; the connecting portion is a bending structure along a first side of the body section; a bending direction of the connecting portion is a direction from the second surface of the body section to the first surface; the light guide plate is disposed on the first surface of the body section; one side of the mounting portion away from the connecting portion is opposite to a first end face of the light guide plate; and light sources are disposed on the mounting portion. A display device is further disclosed. 1. A backlight unit , comprising a backplane and a light guide plate (LGP) , whereinthe backplane includes a body section and a bending section connected with the body section;the body section includes a first surface and a second surface opposite to each other; the bending section includes at least a connecting portion and a mounting portion extended from the connecting portion and opposite to the first surface;the connecting portion is a bending structure along a first side of the body section; a bending direction of the connecting portion is a direction from the second surface of the body section to the first surface;the LGP is disposed on the first surface of the body section;one side of the mounting portion away from the connecting portion is opposite to a first end face of the LGP; and light sources are disposed on the mounting portion.2. The backlight unit according to claim 1 , wherein a first zigzag structure is provided on one side of the mounting portion provided with the light sources; and a size of notches of the first zigzag structure matches with a size of the ...

BACKLIGHT SOURCE MODULE AND DISPLAY DEVICE

A backlight source module and a display device are provided. The backlight source module includes a back plate structure and a rubber member. The back plate structure includes a bottom plate, and a first side plate and a second side plate respectively connected with the bottom plate, and the first side plate and the second side plate oppose each other. A light-emitting portion, a light-guiding component and the rubber member are sequentially disposed on the bottom plate along a first direction pointing from the first side plate to the second side plate. The rubber member is only disposed at the second side plate. 1. A backlight source module , comprising: a back plate structure and a rubber member , whereinthe back plate structure comprises: a bottom plate, and a first side plate and a second side plate respectively connected with the bottom plate, and the first side plate and the second side plate oppose each other; anda light-emitting portion, a light-guiding component and the rubber member are sequentially disposed on the bottom plate along a first direction pointing from the first side plate to the second side plate, and the rubber member is only disposed at the second side plate.2. The backlight source module according to claim 1 , whereinthe back plate structure further comprises a top plate, one end of the top plate is fixedly connected with a top edge of the first side plate, and the other end of the top plate extends along the first direction;an upper surface of the top plate is flush with an upper surface of the rubber member, and the top plate has an opening disposed above the light-emitting portion and the light-guiding component.3. The backlight source module according to claim 2 , further comprising:a heat-conducting component, disposed between the light-emitting portion and the bottom plate.4. The backlight source module according to claim 3 , whereina sunken trench is disposed at a portion, close to the first side plate, of the bottom plate;the light ...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device. 1. A semiconductor device , comprising:a heavily doped semiconductor layer;an epitaxial layer of a first conductivity type formed on the semiconductor layer, the epitaxial layer including a first portion of the first conductivity type adjacent the semiconductor layer forming a field stop zone, and the epitaxial layer further including a second portion of the first conductivity type forming a base region, the field stop zone having a first side adjacent the semiconductor layer and a second side adjacent the base region, the base region having a first side adjacent the field stop zone and a second side opposite the first side; anda device region formed in the second side of the base region, the device region comprising at least one PN junction,wherein the epitaxial layer is formed to have a doping profile of the first conductivity type having a first doping level as a background doping level and having multiple doped regions having doping levels greater than the first doping level, the multiple doped regions being spaced apart within the field stop zone, each of the doped regions having a thickness where the thickness ...

A CONJUGATE OF A TUBULYSIN ANALOG WITH BRANCHED LINKERS

The present invention relates to the conjugation of a tubulysin analog compound to a cell-binding molecule with branched/side-chain linkers for having better delivery of the conjugate compound and targeted treatment of abnormal cells. It also relates to a branched-linkage method of conjugation of a tubulysin analog molecule to a cell-binding ligand, as well as methods of using the conjugate in targeted treatment of cancer, infection and autoimmune disease. 15Bacillus anthracisE. coliE. coliEscherichia coliPseudomonas aeruginosa. The side chain-linkaged conjugate compound according to claim 1 , wherein the cell binding agent/molecule is capable of targeting against a tumor cell claim 1 , a virus infected cell claim 1 , a microorganism infected cell claim 1 , a parasite infected cell claim 1 , an autoimmune disease cell claim 1 , an activated tumor cells claim 1 , a myeloid cell claim 1 , an activated T-cell claim 1 , an affecting B cell claim 1 , or a melanocyte claim 1 , or any cells expressing any one of the following antigens or receptors: CD 1 claim 1 , CD1a claim 1 , CD1b claim 1 , CD1c claim 1 , CD1d claim 1 , CD1e claim 1 , CD2 claim 1 , CD3 claim 1 , CD3d claim 1 , CD3e claim 1 , CD3g claim 1 , CD4 claim 1 , CD5 claim 1 , CD6 claim 1 , CD7 claim 1 , CD8 claim 1 , CD8a claim 1 , CD8b claim 1 , CD9 claim 1 , CD10 claim 1 , CD11a claim 1 , CD11b claim 1 , CD11c claim 1 , CD11d claim 1 , CD12w claim 1 , CD14 claim 1 , CD15 claim 1 , CD16 claim 1 , CD16a claim 1 , CD16b claim 1 , CDw17 claim 1 , CD18 claim 1 , CD19 claim 1 , CD20 claim 1 , CD21 claim 1 , CD22 claim 1 , CD23 claim 1 , CD24 claim 1 , CD25 claim 1 , CD26 claim 1 , CD27 claim 1 , CD28 claim 1 , CD29 claim 1 , CD30 claim 1 , CD31 claim 1 , CD32 claim 1 , CD32a claim 1 , CD32b claim 1 , CD33 claim 1 , CD34 claim 1 , CD35 claim 1 , CD36 claim 1 , CD37 claim 1 , CD38 claim 1 , CD39 claim 1 , CD40 claim 1 , CD41 claim 1 , CD42 claim 1 , CD42a claim 1 , CD42b claim 1 , CD42c claim 1 , CD42d claim 1 , CD43 ...

Saddle System and Bicycle

Provided is a saddle system and a bicycle, wherein the saddle system comprises a follower device, and the follower device is arranged on the seat rod of the bicycle for mounting the saddle. The follower device comprises a left and right rotating assembly and a left and right turnover assembly which are interconnected, wherein the left and right rotating assembly is rotated leftward or rightward with respect to the left and right turnover assembly, so that the saddle rotates leftward or rightward with respect to the seat rod. The left and right turnover assembly is turned over leftward or rightward with respect to the left and right rotating assembly to make the saddle is turned over leftward or rightward with respect to the seat rod. 1. A saddle system , comprising a follower device , wherein the follower device is arranged on a seat rod of a bicycle for mounting a saddle , and the follower device comprises a left and right rotating assembly and a left and right turnover assembly which are interconnected , wherein the left and right rotating assembly is rotated leftward or rightward with respect to the left and right turnover assembly , so that the saddle rotates leftward or rightward with respect to the seat rod , the left and right turnover assembly is turned over leftward or rightward with respect to the left and right rotating assembly , so that the saddle is turned over leftward or rightward with respect to the seat rod.2. The saddle system according to claim 1 , wherein the saddle system further comprises the saddle claim 1 , the saddle being mounted on the follower device claim 1 , and left and right sides of the saddle being respectively provided with a thigh avoidance part claim 1 , a front side of the saddle being provided with an avoidance part for avoiding a private part.3. (canceled)4. The saddle system according to claim 1 , wherein the left and right rotating assembly is mounted on the seat rod of the bicycle claim 1 , the left and right turnover ...

SOLID STATE DISK PACKAGING LINE

A solid state disk packaging line, for packaging solid state disks, includes a stacking tray conveying system, a packaging system, a packaging box conveying system, and a packaging box packaging system. The packaging system includes a packaging box loading device, a sealing bag loading device, and a packaging machine. Two sides of the packaging system provided with the packaging machine are connected with the stacking tray conveying system and the packaging box conveying system respectively. The packaging machine receives stacking trays, and loads the stacking trays into a packaging box, and then transfers the packaging box to the packaging box packaging system via the packaging box conveying system. The packaging box with the stacking trays loaded therein is sealed by the packaging box packaging system. The packaging line packages and seals the packaging box without manual work which protects solid state disks, avoids doing damage, and improves production efficiency. 1. A solid state disk packaging line , for packaging solid state disks , comprising a stacking tray conveying system , a packaging system , a packaging box conveying system , and a packaging box packaging system; the packaging system comprising a packaging box loading device , a sealing bag loading device , and a packaging machine which are arranged linearly; two sides of the packaging system where is provided with the packaging machine being connected with the stacking tray conveying system and the packaging box conveying system respectively , the packaging machine being adapted for receiving a stacking tray loaded with solid state disks and conveyed by the stacking tray conveying system , and loading the stacking tray into a packaging box , and then transferring the packaging box to the packaging box packaging system via the packaging box conveying system; and the packaging box with the stacking tray loaded therein being sealed by the packaging box packaging system.2. The solid state disk packaging ...

Power device with high aspect ratio trench contacts and submicron pitches between trenches

This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS

This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate. 1. A method of forming a semiconductor device comprising:forming trenches in semiconductor substrate, leaving semiconductor protuberances between trenches, putting a recessed gate electrode in the trenches;putting first conductivity type dopants into the upper sidewalls of the semiconductor protuberance, using the recessed gate electrode as a mask;forming second conductivity type regions in semiconductor protuberance deeper than the first conductivity type dopants; andforming silicide at top of semiconductor protuberance such that it contacts both the first conductivity type region and the second semiconductor type region without forming silicide on the gate electrode.2. The method of wherein the silicide is formed across substantially the entire top surface of the semiconductor protuberance3. The method of wherein the silicide and the top of the semiconductor protuberance are formed substantially flat.4. The method of further comprising before said putting a recessed gate electrode claim 1 , putting a shield electrode at the bottom of the trenches.5. The method of wherein putting first conductivity type dopants into the upper sidewalls of the semiconductor protuberance also includes putting those dopants in the top surface of the semiconductor protuberance and wherein the ...

ENHANCED OPPORTUNISTIC MOBILE RECEIVE DIVERSITY FOR DUAL-SIM DUAL-ACTIVE MOBILE DEVICE

A method for performing mobile receive diversity may include: enabling a first receive chain associated with a first radio access technology (RAT) to receive one or more signals from a second RAT; receiving second RAT signals on a second receive chain; enabling receive diversity on a modem associated with a second receive chain; generating, by a diversity receiver, a receive diversity signal based on the one or more second RAT signals received by the first receive chain during periods of time the first receive chain does not receive a signal from the first RAT; and outputting the generated receive diversity signal to a decoder for the second RAT. 1. A method for performing mobile receive diversity , the method comprising:enabling a first receive chain associated with a first radio access technology (RAT) to receive one or more signals from a second RAT;receiving second RAT signals on a second receive chain;enabling receive diversity on a modem associated with the second receive chain;generating, by a diversity receiver, a receive diversity signal based on the one or more second RAT signals received by the first receive chain during periods of time the first receive chain does not receive a signal from the first RAT; andoutputting the generated receive diversity signal to a decoder for the second RAT.2. The method of claim 1 , further comprising blanking the receive diversity signal during periods of time the first receive chain receives a signal from the first RAT.3. The method of claim 2 , further comprising:receiving timing information about the first receive chain; anddetermining the periods of time the first receive chain does not receive a signal from the first RAT based on the received timing information.4. The method of claim 4 , wherein the timing information comprises information about periods of time the first receive chain receives a signal from the first RAT.5. The method of claim 3 , wherein the timing information comprises information about periods of ...

SOLAR ACTIVATED LOW VOLTAGE FLOATING AND LAND BASED WATER AERATION SYSTEM

The aerator system incorporates a land-based or water-based floating solar activated water aeration system with integrated linear diaphragm air compressor and controller to provide improved oxygen addition into water. The system uses low voltage and an advanced controller with max power point tracking (MPPT) technique, which converts the solar panel photovoltaic low voltage DC to low voltage AC and allows power generated from each solar panel to be fully utilized. 1. A landed-based water aeration system , comprising:a pole secured to a portion of land;a frame coupled to the pole;a solar panel coupled to the frame;an encasement coupled to the pole;a controller housed within the encasement;an air compressor housed within the encasement and electrically coupled to the controller;one or more diffusers submerged under water; andan air hose pneumatically coupling the air compressor and the one or more diffusers.2. The landed-based water aeration system of further comprising:one or more horizontal frame rails;one or more slotted vertical frame rails coupled to the one or more horizontal frame rails;a mounting bracket coupled to the one or more horizontal frame rails; andan adjustable edge lock slidably engaged to the one or more slotted vertical frame rails for fitment to differently sized solar panels.3. The landed-based water aeration system of wherein the encasement further comprises a layer of rubber under an upper clamp to secure the solar panels coupled to the one or more slotted vertical frame rails.4. The landed-based water aeration system of claim 1 , the encasement further comprising:an air inlet filter, the encasement having an air compressor outlet and having a power cord inlet, wherein air flows through the air inlet filter past the controller and into the air compressor, the air compressor outlet is ported through the encasement, and the power cord inlet is ported through the encasement.5. The landed-based water aeration system of further comprising:a base ...

LIGHT GUIDE PLATE, BACKLIGHT AND DISPLAY DEVICE

A light guide plate, a backlight and a display device are provided. The light guide plate includes a light incident surface, and a light emergent surface intersecting with the light incident surface, the light emergent surface being provided with a blank region close to the light incident surface; the blank region is provided with a plurality of convex point structures thereon. The light guide plate can reduce a disadvantageous effect of an adhesive preparation structure on the backlight and improve a light utilization rate of the backlight. 1. A light guide plate , comprising a light incident surface , and a light emergent surface intersecting with the light incident surface , the light emergent surface being provided with a blank region close to the light incident surface , wherein , the blank region is provided with a plurality of convex point structures thereon.2. The light guide plate according to claim 1 , wherein the plurality of convex point structures are arranged uniformly.3. The light guide plate according to claim 2 , wherein a ratio of a total area of the plurality of convex point structures in the blank region to an area of the blank region is 0.2 to 0.5.4. The light guide plate according to claim 1 , wherein a cross-sectional shape of each of the convex point structures in a direction perpendicular to the light emergent surface is a semicircle claim 1 , a rectangle or a trapezoid.5. The light guide plate according to claim 1 , wherein a bottom surface of each of the plurality of convex point structures is a circle.6. The light guide plate according to claim 5 , wherein a diameter of the bottom surface of each of the convex point structures is 60 μm to 70 μm.7. The light guide plate according to claim 1 , wherein heights of the plurality of convex point structures are all less than or equal to 0.05 mm.8. The light guide plate according to claim 1 , further comprising a mesh point region claim 1 , the mesh point region being located on a bottom surface ...

MOSFET DEVICE AND FABRICATION

A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; and a body region in the substrate. 1. A semiconductor device , comprising:a substrate;an active gate trench in the substrate;a source polysilicon pickup trench in the substrate;a polysilicon electrode disposed in the source polysilicon pickup trench;a gate pickup trench in the substrate;a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; anda body region in the substrate.2. The semiconductor device of claim 1 , further comprising a contact hole filled with a metal conductor extending from the polysilicon electrode to a source metal layer deposited on a top side of the semiconductor device.3. The semiconductor device of claim 2 , wherein the contact hole is narrower in width than the polysilicon electrode.4. The semiconductor device of claim 1 , wherein the source polysilicon pickup trench is deeper than the active gate trench.5. The semiconductor device of claim 1 , wherein the source polysilicon pickup trench is narrower than the active gate trench.6. The semiconductor device of claim 1 , wherein the first conductive region includes a gate ...

CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device is provided, which includes providing a plurality of fins over a substrate and forming a plurality of first gate structures having a first gate pitch and a plurality of second gate structures having a second gate pitch traversing across a first and a second set of fins, respectively. The second gate pitch is wider than the first gate pitch. Epitaxial regions are formed between adjacent second gate structures in the second set of fins. A dielectric layer is deposited over the second gate structures and the epitaxial regions. Contact openings are formed in the dielectric layer. At least one of the contact openings is formed over the second gate structure where the second gate structure traverses across the second set of fins. The contact openings are filled with a conductive material to form contact structures electrically coupled to the second gate structures. 1. A method of fabricating a semiconductor device comprising:providing a plurality of fins over a substrate;forming a plurality of first gate structures having a first gate pitch traversing across a first set of fins;forming a plurality of second gate structures having a second gate pitch traversing across a second set of fins, wherein the second gate pitch is wider than the first gate pitch;forming a plurality of epitaxial regions in spaces between adjacent second gate structures in each of the traversed second set of fins;forming a dielectric layer having a first dielectric portion and a second dielectric portion over the plurality of second gate structures and the plurality of epitaxial regions, wherein an etch stop layer is interposed between the first and second dielectric portions;forming a plurality of contact openings in the dielectric layer, wherein at least one of the contact openings is formed over the second gate structure at a location where the second gate structure traverses across the second set of fins; andfilling the plurality of contact openings ...

Gas phase rust-resisting material for various metals and preparation method thereof

A gas phase rust-resisting material for various metals includes, calculated in parts by weight, following components of: 78.5 to 95.5 parts of benzotriazole, 78.5 to 95.5 parts of dicycloethylamine nitrite, 500 to 800 parts of octadecylamine, 9000 to 11000 parts of ethanol, 33.5 to 38.5 parts of a reinforcing agent and 23.5 to 25.5 parts of a rust-resistant microcapsule. Further disclosed is a method for preparing the gas phase rust-resisting material which is suitable for various metals. 1. A gas-phase rust-resisting material for various metals , comprising: calculated by weight , 78.5 to 95.5 parts of benzotriazole , 78.5 to 95.5 parts of dicycloethylamine nitrite , 500 to 800 parts of octadecylamine , 9000 to 11000 parts of ethanol , 33.5 to 38.5 parts of a reinforcing agent and 23.5 to 25.5 parts of a rust-resisting microcapsule.2. The gas-phase rust-resisting material for various metals according to claim 1 , wherein the reinforcing agent is a mixed solution of nan-graphene oxide dispersion and nano-silica dispersion; wherein a volume ratio of nano-graphene oxide dispersion to the nano-silica dispersion is at a range of 1:5-7.3. The gas-phase rust-resisting material for various metals according to claim 2 , wherein the nano-graphene oxide dispersion has a pH at a range of 5-7 claim 2 , a concentration of 5-8 mg/ml claim 2 , a specific surface area of 1217 m/g claim 2 , and a sheet diameter at a range of 2-4 μm; the nano-silica dispersion is an aqueous slurry; wherein the nano-silica dispersion has a silica content at a range of 18-20 wt % by weight claim 2 , and a particle diameter D50 at a range of 50-80 nm claim 2 , a pH at a range of 6-7 claim 2 , a viscosity at a range of 40-60 mpa·s claim 2 , and a density at a range of 1.2-1.21 gml.4. A method for preparing the gas-phase rust-resisting material for the various metals according to claim 1 , comprising a step of preparing rust-resisting microcapsules and a step of mixing; wherein the step of mixing ...

Conjugation linkers, cell binding molecule-drug conjugates containing the linkers, methods of making and uses of such conjugates with the linkers

The present invention relates to linkers having a group of propiolyl, substituted acryl (acryloyl), or disubstituted propanoyl, and using such linkers for the conjugation of compounds, in particular, cytotoxic agents to a cell-binding molecule.

Cell-binding molecule-tubulysin derivative conjugate and preparation method therefor

The present invention relates to the conjugates of Tubulysin derivatives (anologs) and cell-binding molecules using branched (side-chain) linkers, and the resulting conjugates have better pharmacokinetic properties, and thus can more accurately target and kill abnormal cells. The invention also relates to the conjugation methods of the Tubulysin derivatives (anologs) to cell-binding molecules, and methods for synthesizing the small molecules, and methods of using the conjugates for targeted therapy for cancers, infections and autoimmune diseases. The conjugates of Tubulysin derivatives with long branched linkers demonstrated increased half-life, minimal exposure to non-targeted cells, tissues or organs in system circulation, leading to reduced off-target toxicity.

Auristatin analogues and their conjugates with cell-binding molecules

This invention relates to analogues of auristatins, in particular monomethyl auristatin F (MMAF), as cytotoxic agents, conjugates of such cytotoxic agents with a cell-binding agent, the preparation and the therapeutic uses of these cytotoxic agents and conjugates thereof to arrest or retard abnormal cell growth and /or proliferation.

A CONJUGATION LINKER CONTAINING 2,3-DIAMINOSUCCINYL GROUP

The present invention relates to a conjugate of a cytotoxic drug/molecule to a cell-binding molecule with a bis-linker (a dual-linker) containing a 2,3-diaminosuccinyl group. It also relates to preparation of the conjugate of a cytotoxic drug/molecule to a cell-binding molecule with the bis-linker, particularly when the drug having functional groups of amino, hydroxyl, diamino, amino-hydroxyl, dihydroxyl, carboxyl, hydrazine, aldehyde and thiol for conjugation with the bis-linker in a specific manner, as well as the therapeutic use of the conjugates.

Auristatin analogues and their conjugates with cell-binding molecules

Provided are analogues of auristatins, in particular monomethyl auristatin F (MMAF), as cytotoxic agents, conjugates of such agents with a cell-binding agent, the preparation and the therapeutic uses of these cytotoxic agents and conjugates thereof to arrest or retard abnormal cell growth and /or proliferation.

Cross-linked pyrrolobenzodiazepine dimer (pbd) derivative and its conjugates

A novel cross-linked cytotoxic agents, pyrrolobenzo-diazepine dimer (PBD) derivatives, and their conjugates to a cell-binding molecule, a method for preparation of the conjugates and the therapeutic use of the conjugates.

Highly available server system based on cloud computing

A highly available server system based on cloud computing comprises a central control management server, a cloud host server, a storage server and at least one application server; the central control management server is connected with at least one application server, and configured to respectively monitor at least one application server, if detecting that there exists an application server in the fault state among the at least one applications server, then the central control management server sends a first instruction message; the cloud host server is connected with the central control management server, and configured to receive the first instruction message, and call the target virtual machine image file from the storage server according to instructions of the first instruction message, and run the target virtual machine image file; the storage server is configured to store the corresponding virtual machine image file of at least one application server.

A conjugate of a cytotoxic agent to a cell binding molecule with branched linkers

Handheld shower head

Novel hydrophilic linkers and ligand-drug conjugates thereof

The present invention provides hydrophilic linkers that are useful for linking drugs to cell-binding ligands in ligand-drug conjugates, such as antibody-drug conjugates. The ligand- drug conjugate comprises a cell -binding ligand capable of binding to a particular cell population, and a drug connected to the ligand by a hydrophilic linker. The hydrophilic linker comprises one or more hydrophilic groups that render the linker hydrophilic. The hydrophilic linker may also comprise functional groups at the two termini for coupling to the drug and the cell-binding ligand respectively.

Specific conjugation linkers, specific immunoconjugates thereof, methods of making and uses such conjugates thereof

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z) butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Luminous water outlet device

The present disclosure provides a luminous water outlet device, which includes a hydroelectric power generation module, a waterway separation body, a waterway switching module, a water outlet panel, and a light board. The hydroelectric power generation module is arranged at a water inlet, the waterway separation body has two waterways, the waterway switching module is used to switch a flow of water in the two waterways, and the water outlet panel is correspondingly arranged below the two waterways, the light board is electrically connected with the hydroelectric power generation module. Compared with the prior art, the hydroelectric power generation module is arranged in the water inlet to ensure that the light board works no matter which waterway is opened and allows water to flow through. Further, the present disclosure has simpler installation, smaller volume, and simpler waterway structure.

Conjugation linkers, cell binding molecule-drug conjugates containing the linkers, methods of making and uses such conjugates with the linkers

The present invention relates to linkers having a group of propiolyl, substituted acryl (acryloyl), or disubstituted propanoyl, and using such linkers for the conjugation of compounds, in particular, cytotoxic agents to a cell-binding molecule.

A derivative of the cross-linked pyrrolobenzodiazepine dimer (pbd) and its conjugates

Agentes citotóxicos reticulados novedosos, derivados de pirrolobenzodiazepina (PBD) y sus conjugados a una molécula de unión celular, un método para elaborar los conjugados y el uso terapéutico de los conjugados. Novel cross-linked cytotoxic agents, pyrrolobenzodiazepine derivatives (PBD) and their conjugates to a cell binding molecule, a method of making conjugates and the therapeutic use of conjugates.

Wine rack

Methods for obtaining adsorption isotherms of complex mixtures

The present disclosure provides methods for determining adsorption isotherms for complex mixtures. In at least one embodiment, a method for obtaining adsorption isotherms for liquid mixtures includes providing a column comprising an adsorbent. The method includes delivering a composition to the column, the composition comprising a multi-component feed and a solvent. The method includes collecting a sample from the column and introducing the sample to a two dimensional gas chromatograph to determine a time-series concentration of one or more components of the sample. The method includes integrating the time-series concentration of at least one of the one or more components to determine an isotherm of the at least one component. The method includes obtaining quantitative information of the at least one component, based on the isotherm of the at least one component.

Conjugation of a cytotoxic drug with bis-linkage

A conjugation of a cytotoxic drug to a cell-binding molecule with a bis-linker (dual-linker) as shown in Formula (I). Bis-linkage methods of making a conjugate of a cytotoxic drug/molecule to a cell-binding agent in a specific manner are also described, as well as application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease. wherein “ ” is an optional bond; X, Y, Z 1 , and Z 2 are a functional group; m 1 and n are a integer; L 1 and L 2 are a linker.

Conjugation of a cytotoxic drug with bis-linkage

What provided is the conjugation of cytotoxic to a cell-binding molecule with a bis-linker(dual-linker) as shown in Formula (I). It provides bis-linkage methods of making a conjugate of a cytotoxic drug molecule to a cell-binding agent in a specific manner. It also relates to application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease.

Specific conjugation linkers, specific immunoconjugates thereof, methods of making and uses such conjugates thereof

The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)- butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

A conjugate of a tubulysin analog with branched linkers

The present invention relates to the conjugation of a tubulysin analog compound to a cell-binding molecule with branched/side-chain linkers for having better delivery of the conjugate compound and targeted treatment of abnormal cells. It also relates to a branched-linkage method of conjugation of a tubulysin analog molecule to a cell-binding ligand, as well as methods of using the conjugate in targeted treatment of cancer, infection and autoimmune disease.