SPECIALITY JUNCTION THERMOCOUPLE FOR USE IN HIGH TEMPERATURE AND CORROSIVE ENVIRONMENT

A thermocouple includes a first thermocouple wire defining a distal end portion, and a second thermocouple wire defining a distal end portion. A hot junction is formed between the distal end portions of the first and second thermocouple wires. The hot junction defines a splice such that the first thermocouple wire and the second thermocouple wire are in direct contact at their distal end portions. A refractory coating is applied over the hot junction. 1. A thermocouple comprising:a first thermocouple wire defining a distal end portion;a second thermocouple wire defining a distal end portion;a hot junction formed between the distal end portions of the first and second thermocouple wires, the hot junction defining a splice such that the first thermocouple wire and the second thermocouple wire are in direct contact at their distal end portions; anda refractory coating applied over the hot junction.2. The thermocouple according to claim 1 , wherein the hot junction splice is a butt splice.3. The thermocouple according to claim 1 , wherein the hot junction splice is a lap splice.4. The thermocouple according to claim 1 , wherein the hot junction is formed by laser welding.5. The thermocouple according to claim 1 , wherein the refractory coating is a material selected from the group consisting of AlOand SiO.6. The thermocouple according to claim 1 , wherein the refractory coating is applied over the entire hot junction and over at least a section of the distal end portions of the first and second thermocouple wires.7. The thermocouple according to claim 1 , wherein the refractory coating is applied by a process selected from the group consisting of physical vapor deposition claim 1 , chemical vapor deposition claim 1 , plasma enhanced chemical vapor deposition claim 1 , plasma spray claim 1 , and thick film.8. The thermocouple according to claim 1 , wherein the refractory coating defines a continuous thickness in a range between 50 microns and 150 microns.9. The ...

POROUS CERAMIC COMPOSITE STRUCTURE AND METHOD OF MAKING THE SAME

The present invention is related to a porous ceramic composite structure with high mechanical strength and a wide range of porosity which makes flow rate of fluid highly tunable. The porous ceramic composite structure comprises a dense ceramic sheath and one or more inner porous ceramic bodies. The ceramic sheath provides good mechanical properties, protects the one or more inner porous ceramic bodies, and allows the one or more inner porous ceramic bodies to undergo a wide range of porosity changes while still maintaining excellent mechanical properties. 1. A porous ceramic composite structure , comprising:a ceramic sheath, comprising a pillar and one or more through-holes, the pillar comprising a top surface, a bottom surface and a sidewall, the one or more through-holes extending between the top surface and the bottom surface; andone or more porous ceramic bodies, located in the one or more through-holes of the ceramic sheath, the one or more porous ceramic bodies having pores, the pores interconnected with one another to enable fluid to pass therethrough,wherein the ceramic sheath comprises a ceramic material having a theoretical density, and the ceramic material has a high density of between about 70% and about 99.99% of the theoretical density.2. The porous ceramic composite structure of claim 1 , wherein in a cross section of the pillar claim 1 , the cross-sectional area of the ceramic sheath occupies about 10% to about 90% of the cross-sectional area of the porous ceramic composite structure.3. The porous ceramic composite structure of claim 1 , wherein the one or more porous ceramic bodies have a porosity of between about 30% and about 90%.4. The porous ceramic composite structure of claim 1 , wherein the one or more porous ceramic bodies have a pore diameter of between about 0.1 and about 500 μm.5. The porous ceramic composite structure of claim 1 , wherein the one or more porous ceramic bodies comprise the ceramic material.6. The porous ceramic composite ...

Methods Of Making A Specialty Junction Thermocouple For Use In High Temperature And Corrosive Environments

A method of manufacturing a thermocouple includes forming a hot junction between the distal end portions of first and second thermocouple wires. The hot junction defines a splice such that the first thermocouple wire and the second thermocouple wire are in direct contact at their distal end portions. A refractory coating is applied over the hot junction. 1. A method of manufacturing a thermocouple comprising:placing a distal end portion of a first thermocouple wire into physical contact with a distal end portion of a second thermocouple wire to form a splice;laser welding the splice to form a hot junction; andcoating the hot junction with a refractory material.2. The method according to further comprising:coating the entire hot junction and at least a portion of the distal end portions of the first thermocouple wire and the second thermocouple wire; andplacing the joined thermocouple wires and the hot junction within a ceramic insulator body.3. The method according to claim 1 , wherein the distal end portion of the first thermocouple wire and the distal end portion of the second thermocouple wire are placed into physical contact by a butt splice.4. The method according to claim 1 , wherein the distal end portion of the first thermocouple wire and the distal end portion of the second thermocouple wire are placed into physical contact by a lap splice.5. The method according to claim 1 , wherein the coating of refractory material is applied by a process selected from the group consisting of physical vapor deposition claim 1 , chemical vapor deposition claim 1 , plasma enhanced chemical vapor deposition claim 1 , plasma spray claim 1 , and thick film.6. The method according to claim 1 , wherein the coating of refractory material defines a continuous thickness between 50 microns and 150 microns.7. The method according to claim 1 , wherein the coating of refractory material is selected from the group consisting of AlOand SiO.8. The method according to claim 1 , wherein ...

Heater for wafer processing and methods of operating and manufacturing the same

A heater for wafer processing, such as thin film deposition, includes a first heating unit and a second heating unit. The first heating unit includes a substrate with a top surface for supporting a wafer thereon and a back surface. The second heating unit is disposed proximate the back surface of the substrate and is preferably disposed inside an inner space of a shaft supporting the first heating unit in a processing chamber. The first heating unit and the second heating unit are independently controlled. The second heating unit is designed based on the actual temperature profile and heat loss on the top surface. Therefore, the second heating unit can more effectively compensate the heat loss to achieve a more uniform temperature profile on the top surface.

Ceramic heater and method of securing a thermocouple thereto

A ceramic heater is provided that includes a thermocouple having a hot or measuring junction in a form of a bead directly bonded to a ceramic substrate by an active brazing material. Alternatively, a metallized layer is provided on the ceramic substrate and the bead of the thermocouple is directly bonded to the metallized layer by an ordinary brazing material. Due to the direct bonding of the bead to a ceramic substrate, the temperature of the bead reflects the temperature of the ceramic heater almost instantaneously so that the thermocouple can more accurately measure the temperature of the ceramic heater.

Aluminum substrate thick film heater

Thick film resistive element heater with an aluminum substrate is shown having a ceramic oxide dielectric insulator therebetween.

Power terminals for ceramic heater and method of making the same

A ceramic heater (10) is provided that includes a power terminal (16) for connecting a resistive heating element (14) to a power source. An intermediate layer (30) is disposed on an AIN ceramic substrate (12) proximate the resistive heating element (14). The power terminal is bonded to the intermediate layer by an active brazing material. The intermediate layer is formed of Mo/AIN or W/AIN and has a coefficient of thermal expansion between that of the active brazing material and that of the AIN ceramic substrate so that thermal stress generated in the ceramic substrate can be reduced.

Thick film heater integrated with low temperature components and method of making the same

Power connections for ceramic heating element and method for its production

Keramikheizelement, das umfasst: ein Keramiksubstrat; ein Widerstandsheizelement, das an dem Keramiksubstrat angebracht ist; einen Anschluss, der dazu ausgelegt ist, das Widerstandsheizelement mit einer Leistungsquelle zu verbinden; und eine Zwischenschicht, die zwischen dem Anschluss und dem Keramiksubstrat angeordnet ist, wobei die Zwischenschicht aus einer Gruppe ausgewählt ist, die Molybdän/Aluminiumnitrid (Mo/AlN) und Wolfram/Aluminiumnitrid (W/AlN) umfasst. Ceramic heating element comprising: a ceramic substrate; a resistance heating element attached to the ceramic substrate; a terminal configured to connect the resistance heating element to a power source; and an intermediate layer disposed between the terminal and the ceramic substrate, wherein the intermediate layer is selected from a group comprising molybdenum / aluminum nitride (Mo / AlN) and tungsten / aluminum nitride (W / AlN).

Multi-zone ceramic heating system and method of manufacture thereof

An improved heating system for heating a semiconductor wafer during fabrication in a corrosive manufacturing environment is disclosed. The system includes a novel ceramic heater made of a layered ceramic substrate that has a plurality of heating elements and temperature sensor arrangement completely and directly embedded within the ceramic substrate of the ceramic heater. The heating elements and the temperature sensor arrangement are constructed of a molybdenum and aluminum nitride composite that provides a low temperature coefficient of resistance which improves the operating efficiency of the ceramic heater. In operation, the temperature sensor arrangement transmits temperature readings to a microprocessor capable of controlling the heating elements in such a manner as to provide a constant and uniform temperature distribution along the entire surface of the semiconductor wafer.

Method for manufacturing an electrostatic chuck

A method for manufacturing an electrostatic chuck is disclosed wherein a sintered ceramic body having a dielectric layer made from Alumina (Al2O2) and Titanium Nitride (TiN) having a specific range of particle size is heat treated in an oxygen-rich environment in order to produce a uniform dielectric layer having no pores or micro-cracks.

A Senecio scandens injection and its preparation method and application

The invention relates to the technical field of veterinary injection, in particular to a Senecio scandens (S. scandens) injection and its preparation method and application. The injection contains S. scandens extract, which is 60% ethanol extract of S. scandens. In the present invention, the 60% ethanol extract is used as an effective part to prepare the S. scandens injection, and the operation is simple, the cost is low, and can be applied to industrial production on large scale. The prepared S. scandens injection has good bactericidal effect and reasonable effect on preventing and treating respiratory system and digestive system mixed bacterial infection with an effective treatment rate of 93%.

Mehrzonen-keramikheizsystem und verfahren zu seiner herstellung

Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür

Dickschicht-heizelement mit aluminiumsubstrat

Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür

In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same

An in-line heater for use in semiconductor wet chemical processing comprises a single crystal alumina substrate, a resistive heating element disposed on the single crystal alumina substrate, and a protective layer disposed over the resistive heating element. The single crystal alumina substrate has a moderate coefficient of thermal expansion (CTE) that is substantially equivalent to the CTEs of the resistive heating element and the protective layer. Therefore, cracking between the substrate and the protective layer can be minimized. The in-line heater in accordance with this invention exhibits an excellent corrosion-resistance capability even at high temperature and can carry a wide variety of corrosive chemicals including hydrofluoride solution.