Screen

A screen with an improved luminance uniformity is provided. A diffusion film that is disposed at the front surface of the screen is attached to a Fresnel lens with an adhesive. The Fresnel lens is attached to a reflective layer that is deposited on a base film with an adhesive that has a refractive index lower than that of the Fresnel lens and as low as possible.

HYDROGEN SUPPLY SYSTEM AND HYDROGEN SUPPLY METHOD

To reduce the emission of carbon dioxide and improve the energy efficiency in a hydrogen supply system. The hydrogen supply system () comprises: a reformer () for performing steam reforming of a hydrocarbon; a shift reaction unit () for producing a gas containing hydrogen and carbon dioxide by causing a water gas shift reaction of a gas obtained from the reformer; a first absorber () for absorbing the carbon dioxide contained in the gas obtained from the shift reaction unit in an absorption liquid; a hydrogenation reaction unit () for producing a hydrogenated aromatic compound by causing a hydrogenation reaction of an aromatic compound with a gas that has passed through the first absorber; and a regenerator () for separating the carbon dioxide from the absorption liquid by re-circulating the absorption liquid from the first absorber and heating the absorption liquid with heat generated from the hydrogenation reaction. 1. A hydrogen supply system , comprising:a reformer for performing steam reforming of a hydrocarbon;a shift reaction unit for producing a gas containing hydrogen and carbon dioxide by causing a water gas shift reaction of a gas obtained from the reformer;a first absorber for absorbing the carbon dioxide contained in the gas obtained from the shift reaction unit in an absorption liquid;a hydrogenation reaction unit for producing a hydrogenated aromatic compound by causing a hydrogenation reaction of an aromatic compound with a gas that has passed through the first absorber; anda regenerator for separating the carbon dioxide from the absorption liquid by re-circulating the absorption liquid from the first absorber and heating the absorption liquid with heat generated from the hydrogenation reaction.2. The hydrogen supply system according to claim 1 , further comprisinga heating furnace for supplying heat to the reformer; anda second absorber for absorbing the carbon dioxide generated from the heating furnace in an absorption liquid;wherein the second ...

METHOD FOR PRODUCING NICKEL POWDER

Provided is a method for producing fine nickel powder used as suitable seed crystals for producing nickel powder from a solution containing a nickel ammine sulfate complex. The method for producing nickel powder sequentially includes: a mixing step of adding, to a solution containing a nickel ammine sulfate complex, a dispersant containing a sulfonate and an insoluble solid which is insoluble in the solution to form a mixed slurry; a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; and a separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder. 1. A method for producing nickel powder , sequentially comprising:a mixing step of adding, to a solution containing a nickel ammine sulfate complex, a dispersant containing a sulfonate and an insoluble solid which is insoluble in the solution to form a mixed slurry;a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry while maintaining a pressure of a gas phase part in the reaction vessel at 1.0 to 4.0 MPa, to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; anda separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder.2. The method for producing nickel powder according to claim 1 , wherein the concentration of ammonium sulfate contained in the solution containing a nickel ammine sulfate complex is in the range of 10 to 500 g/L.3. The method for producing nickel powder according to claim 2 , wherein claim 2 , in the reduction step claim 2 , the mixed ...

Image signal recording/reproduction apparatus, method employed therein, and image signal recording apparatus

A dynamic image recording button and a still image recording button are provided at the main unit of a movie camera. A magneto-optical recording medium is loaded in a slot. If the dynamic image recording button or the still image recording button is operated during a reproduction operation, the reproduction operation is interrupted in a state in which the mechanical drive (rotation) of the magneto-optical recording medium is sustained. At this point, a dynamic image signal or a still image signal obtained through a photographing operation performed at the camera unit is temporarily recorded in a buffer memory, and is written in the magneto-optical recording medium when a write in the magneto-optical recording medium becomes enabled. Instructions to record dynamic images and to record still images can be issued to the movie camera through a touch-panel provided on the screen of a liquid crystal display unit. Even when operation cannot be performed through the touch-panel, the instructions ...

Electronic camera with self-explanation/diagnosis mode

An electronic camera having a plurality of functions including capturing and recording images is provided. The electronic camera includes an operation input unit for inputting external operations that designate corresponding functions of the camera to be performed, an image pickup unit for capturing the image of an object, and a recorder for recording the image captured by the image pickup unit. The electronic camera further includes a playback unit for at least playing back image information that is recorded on the recording medium and a mode selector for selecting one operation mode of the camera from a plurality of available operation modes that include an operation explanation mode. If the operation explanation mode is selected at the mode selector, the playback unit plays back an operation guide that is pre-stored in a memory, the operation guide explaining at least one of the camera operations and functions thereof.

COBALT POWDER PRODUCTION METHOD

Provided is a production method for producing coarse particles of high purity Co powder from a cobalt ammine sulfate complex solution using fine Co powder and using industrially inexpensive Hgas. 1. A method of producing cobalt powder from a cobalt ammine sulfate complex solution derived from a cobalt-containing material , comprising:(1) a seed crystal addition step of adding cobalt powder as seed crystals to the cobalt ammine sulfate complex solution to form a mixed slurry;(2) a reduction step of blowing hydrogen gas into the mixed slurry obtained in the seed crystal addition step to precipitate a cobalt component in the mixed slurry onto the seed crystals by hydrogen reduction reaction to form cobalt powder, and thereby to form a reduced slurry containing the cobalt powder;(3) a growth step of adding the cobalt ammine sulfate complex solution to the cobalt powder obtained by solid-liquid separation of the reduced slurry formed in the reduction step (2) to form a slurry, blowing hydrogen gas into the resulting slurry, and reducing, precipitating, and growing a cobalt component in the slurry on a surface of the cobalt powder by hydrogen reduction reaction to form a grown cobalt powder, and thereby to form a slurry containing the grown cobalt powder; and(4) a recovery step after the reduction step of subjecting the reduced slurry containing the cobalt powder obtained in the reduction step (2) to solid-liquid separation to separate and recover the cobalt powder as a solid phase component, and another recovery step after the growth step of subjecting the slurry containing the cobalt powder obtained in the growth step (3) to solid-liquid separation to separate and recover the cobalt powder as a solid phase component.2. The method of producing cobalt powder according to claim 1 , wherein claim 1 , in the seed crystal addition step (1) claim 1 , a dispersant is further added to the mixed slurry when the seed crystals are added to the cobalt ammine sulfate complex solution ...

Semiconductor device and manufacturing method thereof

In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.

Image digitizing system

A transporting system for an image digitizer can handle both positive and negative transparent film material. The transport features accurate linear motion with high resolution in a single compact unit. For the processing of individually framed slides, an automatic eject mechanism is provided. Both manual and motor driven focus adjustments are provided. Individual images can be oriented by an angular adjustment option. A special carrier allows the system to process negatives in uncut strips. The transport can manage larger number of images using either a slide tray or roll feed attachment.

GAME SYSTEM

One object is to provide a game system that can technically restrain real money trade. In accordance with one aspect, a game system according to an embodiment of the present invention includes: a bid data generating unit configured to generate bid data including game medium information related to a bid game medium and not including player specifying information that specifies a bidder player; and a second display control unit configured to allow a bid screen generated based on bid data to be displayed in the game being played by an exhibitor player.

IMAGE PROCESSING APPARATUS AND METHOD

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Image reproduction apparatus

An image reproduction apparatus sequences and reproduces multiple moving pictures while eliminating linking and editing operations. A list display unit lists on a screen thumbnails corresponding to each of multiple moving pictures recorded on recording media. A selection unit selects and orders, according to selection operations, multiple thumbnails displayed by the list display unit. Based on the multiple thumbnails selected and ordered by the selection unit, a reproduction unit reproduces the moving pictures corresponding to each of the thumbnails by reproducing them in that order. A display displays moving pictures sequenced in order by the reproduction unit on a screen.

METHOD FOR PRODUCING SEED CRYSTALS USED FOR PRODUCING HYDROGEN-REDUCED NICKEL POWDER

Provided are a method for producing nickel seed crystals that maintains and improves the quality of nickel powder at a low cost while suppressing production cost and environmental load in the production of nickel powder, by optimizing the amount of hydrazine added when producing fine nickel powder as seed crystals using hydrazine; and a method for producing nickel powder using the nickel seed crystals. The method for producing seed crystals used for producing hydrogen-reduced nickel powder, including adding, to an acid solution containing nickel ions that is maintained at a temperature of 50 to 60° C., hydrazine of 1 to 1.25 mol per 1 mol of a nickel component contained in the acid solution to produce the seed crystals. 1. A method for producing seed crystals used for producing hydrogen-reduced nickel powder , the method comprising:adding, to an acid solution containing nickel ions that is maintained at a temperature of 50 to 60° C., hydrazine of 1 to 1.25 mol per 1 mol of a nickel component contained in the acid solution to produce the seed crystals.2. The method for producing seed crystals used for producing hydrogen-reduced nickel powder according to claim 1 , wherein the addition of hydrazine to the acid solution containing nickel ions is performed by adding claim 1 , to the acid solution claim 1 , a solution formed by mixing a mixed solution of sodium hydroxide and a complexing agent with a hydrazine solution containing hydrazine of 1 to 1.25 mol per 1 mol of a nickel component contained in the acid solution.3. A method for producing hydrogen-reduced nickel powder in which the nickel powder is produced from an acid solution containing nickel ions through hydrogen reduction claim 1 , the method comprising:a hydrogen reduction step of adding a complexing agent and seed crystals to the acid solution containing nickel ions to form a complex solution containing nickel complex ions and seed crystals and then blowing hydrogen gas to reduce the nickel complex ions to ...

METHOD FOR PRODUCING SEED CRYSTAL OF COBALT POWDER

Provided is a method for producing seed crystals of cobalt powder, sequentially including: a complexing step of adding ammonia, an ammonia compound solution, or both of ammonia and an ammonia compound solution to a cobalt sulfate solution to obtain a solution containing a cobalt ammine sulfate complex; a mixing step of adding a solid to the solution containing the cobalt ammine sulfate complex to form a mixture slurry; a reduction and precipitation step of charging a reaction vessel with the mixture slurry, blowing hydrogen gas into the reaction vessel and reducing cobalt contained in the mixture slurry to obtain a cobalt powder slurry containing cobalt precipitate with a cobalt component precipitated on the surface of the solid as cobalt powder; and a solid-liquid separation step of performing solid-liquid separation on the cobalt powder slurry to obtain cobalt precipitate and a solution after reduction. 1. A method of producing seed crystals of cobalt powder , sequentially comprising:a complexing step of adding ammonia, an ammonia compound solution, or both of ammonia and an ammonia compound solution to a cobalt sulfate solution to obtain a solution containing a cobalt ammine sulfate complex;a mixing step of adding nickel powder as a solid that is insoluble or slightly soluble in the solution containing the cobalt ammine sulfate complex, to the solution containing the cobalt ammine sulfate complex obtained in the complexing step to form a mixture slurry;a reduction and precipitation step of charging a reaction vessel with the mixture slurry obtained in the mixing step, and blowing hydrogen gas into the reaction vessel to reduce cobalt contained in the mixture slurry and obtain a cobalt powder slurry containing cobalt precipitate with a cobalt component precipitated on a surface of the solid as cobalt powder; anda solid-liquid separation step havinga solid-liquid separation treatment for separating the cobalt powder slurry obtained into the cobalt precipitate and a ...

Screen

A screen with an improved luminance uniformity is provided. A diffusion film that is disposed at the front surface of the screen is attached to a Fresnel lens with an adhesive. The Fresnel lens is attached to a reflective layer that is deposited on a base film with an adhesive that has a refractive index lower than that of the Fresnel lens and as low as possible.

Semiconductor device and semiconductor integrated circuit having a conductive film on element region

In a semiconductor device of MOS structure, the element region has a shape such as a square shape which has a plurality of sides and a plurality of corners. On the element region, a conductive film which constitutes one electrode of the MOS structure is formed. The other electrode of the MOS structure is a silicon substrate. The conductive film is provided so as to cover at least sides adjacent to each other and so as not to cover the corners including the corners which are the contact points (intersecting points) of the adjacent sides. Further, in case the element region is in a ring shape, the conductive film is provided so as to cover none of the corners including the inside corners of the ring-shaped element region. By the above-mentioned structure, the occurrence of breakdown in the insulation film in the MOS structure can be prevented, and the reliability thereof can be enhanced.

Method for producing high density nickel powder

Provided is a method for producing high density nickel powder particularly having a median diameter of 100 to 160 μm by controlling a particle size of nickel powder. The method includes: performing an initial operation by charging a pressure vessel equipped with a stirrer with a nickel ammine complex solution containing nickel in the concentration of 5 to 75 g/L together with seed crystals in the amount of 5 to 200 g per liter of the solution, increasing the temperature of the solution, and performing a reduction reaction with hydrogen by blowing hydrogen gas into the pressure vessel, thereby obtaining the nickel contained in the nickel ammine complex solution as nickel powder; and thereafter, performing a specified operation A repeatedly at least once to obtain the nickel powder having the median diameter of 100 to 160 μm and a bulk density of 1 to 4.5 g/cm3.

PARASITIC PLANT CONTROL AGENT AND USE THEREOF

Parasitic plants parasitizing on crops can be controlled effectively, by providing an agent for controlling parasitic plants, which comprises tiadinil or the like as the active ingredient and a method for using an agent for controlling parasitic plants, which comprises treating a parasitized plant or soil with an effective amount of agent for controlling parasitic plants. As a result, the yield of crops can be recovered to the level of parasitism-free crops. Additionally, by inhibiting parasitism of parasitic plants strongly, development of the next generation can be inhibited so that the level of pollution with parasitic plants on agricultural land can be lowered with cultivating sensitive crops.

Semiconductor device and manufacturing method thereof

In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.

SEMICONDUCTOR DEVICE AND AUTOMOTIVE AC GENERATOR

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

METHOD FOR PRODUCING HIGH DENSITY NICKEL POWDER

Provided is a method for producing high density nickel powder particularly having a median diameter of 100 to 160 μm by controlling a particle size of nickel powder. The method includes: performing an initial operation by charging a pressure vessel equipped with a stirrer with a nickel ammine complex solution containing nickel in the concentration of 5 to 75 g/L together with seed crystals in the amount of 5 to 200 g per liter of the solution, increasing the temperature of the solution, and performing a reduction reaction with hydrogen by blowing hydrogen gas into the pressure vessel, thereby obtaining the nickel contained in the nickel ammine complex solution as nickel powder; and thereafter, performing a specified operation A repeatedly at least once to obtain the nickel powder having the median diameter of 100 to 160 μm and a bulk density of 1 to 4.5 g/cm. 2. The method of producing nickel powder according to claim 1 , wherein the operation A is performed repeatedly four times or more and thus the reduction reaction is performed five times or more in total including the initial operation to obtain the nickel powder. The present invention relates to a method for producing high purity and high density nickel powder by hydrogen reduction.As a method for industrially producing nickel powder expected to be used as a conductive paste material or a positive electrode active material for a nickel metal hydride battery or the like, there is a method employing a wet process. There are various methods for industrially producing nickel powder by the wet process, and one of the methods is a method for producing nickel powder by adding a reducing agent to a solution containing nickel for reducing a nickel ion contained in the solution. In particular, a reducing method by blowing hydrogen gas into an acidic solution containing nickel as a complex can be industrially inexpensively carried out, and hence is widely employed.In this method, as described in Japanese Patent Laid-Open ...

Image processing apparatus and method

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Non-volatile semiconductor memory device

A plurality of NAND cells are arranged in a cell array. In each of the NAND cells, a pair of selection gate transistors is connected in series to a plurality of memory cell transistors. An inter-gate connection trench is formed in an insulating film between layers of stacked gates of the selection gate transistors. The stacked gates are electrically connected to each other. At an end part of the cell array in the row direction, an STI area is formed, and dummy NAND cells are formed at an end part in the row direction. A dummy selection gate transistor is connected in series to a plurality of dummy memory cell transistors. No inter-gate connection trench is present in an insulating film between layers of stacked gates of the dummy selection gate transistor, and the stacked gates of the dummy selection gate transistor are not electrically connected to each other.

Semiconductor device and method for manufacturing thereof

In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

Semiconductor device having line-and-space pattern group

A first insulating film is formed on a semiconductor substrate. A first pattern group having a plurality of first conductors respectively having a first width and separated from each other by a first interval is formed on the first insulting film. A second conductor having a second width larger than the first width is formed separately from a first conductor of the plurality of first conductors at an end of the first pattern group by a first distance in parallel with the plurality of first conductors. A third conductor having a width equal to the second width is formed on the same side as the second conductor with respect to the first pattern group and separated from the first conductor by the first distance. A fourth conductor having a width equal to the second width is formed between the second and third conductors and separated from the first conductor by the first distance.

METHOD FOR PRODUCING NICKEL POWDER

Provided is a method for controlling generation of scaling in a reaction vessel to reduce time and cost required for removal of the scaling in the process of producing nickel powder from a solution containing a nickel ammine sulfate complex. This is a method for producing nickel powder, including: adding, to the solution containing the nickel ammine sulfate complex, seed crystals in an amount of 0.3 times or more and 3 times or less the weight of nickel in the solution to form a slurry; and blowing hydrogen gas into the slurry to reduce a nickel complex ion and to thereby form a nickel precipitate. 1. A method of producing nickel powder , comprising:adding, to a solution containing a nickel ammine sulfate complex, seed crystals having a particle size of 1 to 20 μm in an amount of 0.3 to 3 times a weight of nickel in the solution to form a slurry;charging the slurry into a reaction vessel, maintaining a liquid phase portion occupied by the slurry and a gaseous phase portion other than the liquid phase portion within the reaction vessel;blowing hydrogen gas into the slurry to reduce a nickel complex ion and to thereby produce and recover nickel powder in which a nickel precipitate is formed on a surface of the seed crystals; andperforming hydrogen reduction by adding the solution containing the nickel ammine sulfate complex to the recovered nickel powder in which the nickel precipitate is formed on the surface of the seed crystals and blowing hydrogen gas into the nickel powder to precipitate nickel on the nickel precipitate and to thereby produce grown nickel powder.2. The method of producing nickel powder according to claim 1 , wherein a polyacrylate salt dispersant is added to the slurry in an amount of 0.5 to 5% based on the weight of the seed crystals added to the slurry.3. The method of producing nickel powder according to claim 1 , wherein the hydrogen reduction is repeated to precipitate on the nickel precipitate and to thereby obtain further grown nickel ...

METHOD FOR PRODUCING NICKEL POWDER

Provided is an efficient method for producing nickel powder from a solution containing a nickel ammine complex, the method including adding seed crystals to a solution containing a nickel ammine complex and subjecting the resulting mixture to hydrogen reduction under high temperatures and high pressures to produce nickel powder, which makes it possible to maintain the quality of the nickel powder produced and reduce the amount of the seed crystals used. The method for producing nickel powder is characterized by adding seed crystals and a dispersant having an anionic functional group to the solution containing a nickel ammine complex to form a mixture slurry, and subjecting the mixture slurry to pressurized hydrogen reduction treatment by blowing hydrogen into the mixture slurry in a high temperature and high pressure atmosphere to cause a reduction reaction, thereby reducing the nickel ammine complex in the mixture slurry to obtain nickel powder.

Semiconductor device

The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

Semiconductor device, electronic card and pad rearrangement substrate

A semiconductor device comprises a substrate, an external terminal provided on the substrate, an internal wiring pattern electrically connected to the external terminal, a semiconductor chip mounted on the substrate and electrically connected to the internal wiring pattern, and an antenna pattern. The antenna pattern provided at each of adjacent two corner portions of the substrate and is grounded.

Metal strip, connector, and method of manufacturing metal strip

A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu-Sn compound layer or a CuNiSn-compound layer on the Ni plating layer and a Sn layer or a SnCu-ally layer on the CuSn compound layer or the CuNiSn-compound layer. The metal strip is further fabricated into a connector.

Semiconductor device

A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element and the heat dissipation base to each other; and a bonding material which bonds the main surface of the diode element and the Cu lead to each other. The bonding material provided on the back surface side of the diode element is a lead-free solder having a melting point higher than 260° C. and a thermal expansion coefficient lower than that of a Zn—Al solder; and the bonding material provided on the main surface side of the diode element contains a high-melting-point metal having a melting point higher than 260° C. and a compound of Sn and the high-melting-point metal.

Image processing apparatus and method

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Resin granulating apparatus

In a resin granulating apparatus of the present invention, a bracket extending in the outward radial direction over an outer peripheral surface of a sleeve is provided for the sleeve for rotatably supporting a cutter shaft of a cutter for shearing a material extruded from a die. Stopper means cooperating with the bracket to regulate movement of the sleeve toward the die and moving a regulation position in the axial direction is provided on the radially outer side over an outer diameter of the sleeve. With such a configuration, installation space is compactified so as to additionally provide the stopper means in the existing facilities, and a position of the cutter relative to a die surface is precisely adjusted so as to stably produce a pellet of a best shape.

Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using

A polishing apparatus includes a holder for holding a polished body with a polished surface thereof facing upwardly, and a polishing head for holding a polishing pad having a polishing surface having an area smaller than an area of the polished surface while contacting the polishing pad with the polished surface and for rotating the polishing pad around its rotation axis. The polishing head is provided with a driver for revolving the polishing pad around a revolution axis, and the revolution axis and the rotation axis are positioned so that a distance between the revolution axis and the rotation axis becomes smaller than a radius of the polishing pad.

Irradiation control device

In an irradiation control device which extends a longevity of an LED, a feedback control is performed to an irradiating portion by an output signal of a photo device provided in relation to the irradiating portion, thereby making brightness fixed. Alternatively, by performing image processing to an image taken by a camera, brightness on a screen is calculated, so that a feedback control is performed to the irradiating portion to make the brightness fixed. Alternatively, based on a recognition rate upon character recognition within the image taken by the camera, a feedback control is performed to the irradiating portion to make the brightness fixed.

Semiconductor Device and Method for Manufacturing Same

The purpose of the present invention is to increase the reliability of a semiconductor device in which a semiconductor element and a substrate are connected by solder and which is molded by resin. 1. A method of manufacturing a semiconductor device , comprising:a connection step of connecting a semiconductor element to a lead using solder;an alloy formation step of volatizing easily volatized metals in a decompressed atmosphere and forming an alloy of the easily volatized metals and metals contained in the lead on a surface of the lead; anda sealing step of sealing the lead provided with the semiconductor element and the alloy by a resin.2. The method according to claim 1 , wherein the alloy formation step is executed at the same time as the connection step or after the connection step.3. The method according to claim 2 , further comprising:a bonding step of bonding a wire or a ribbon to the semiconductor element solder-connected to the lead,wherein the alloy formation step is executed after the bonding step.4. The method according to claim 1 , wherein the easily volatized metals contained in the solder connecting the semiconductor element are used as the easily volatized metals to be volatized.5. The method according to claim 4 , wherein the easily volatized metals of 5 wt. % or more are contained in the solder used for the connection.6. The method according to claim 1 , wherein the easily volatized metals are supplied separately from the solder connecting the semiconductor element.7. The method according to claim 1 , wherein the easily volatized metals contain at least one of Zn claim 1 , Mg claim 1 , and Sb.8. A semiconductor device that includes a lead claim 1 , a semiconductor element claim 1 , and solder connecting the lead to the semiconductor element claim 1 ,wherein an alloy of easily volatized metals and the lead is provided between the lead and a sealing resin.9. The semiconductor device according to claim 8 , wherein the easily volatized metals forming ...

Die for manufacturing resin pellets

A die for manufacturing resin pellets capable of processing a die plate easily, and achieving simplification of a construction of heat channels and enhancement of heating efficiency. A die 1 for manufacturing resin pellets provided with a number of nozzle orifices 7 in the outer surface of the die, there are provided a plurality of rows of heat channels 8 which extend in a direction crossing the resin channels 5 in the vicinity of the outer surface of the die and are arranged along the resin channels 5. At least one of an introducing course and a discharging course for a heat medium in the plurality of heat channels 8.

Semiconductor device, electronic card and pad rearrangement substrate

A semiconductor device comprises a substrate, an external terminal provided on the substrate, an internal wiring pattern electrically connected to the external terminal, a semiconductor chip mounted on the substrate and electrically connected to the internal wiring pattern, and an antenna pattern. The antenna pattern provided at each of adjacent two corner portions of the substrate and is grounded.

Image processing apparatus and method

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

GAME SYSTEM

One object is to provide a video game system that can technically restrain real money trade. In accordance with one aspect, a server device according to an embodiment of the present invention includes: a determination unit configured to determine whether an exchange of exhibited game contents and bid game contents is concluded based on a game content parameter value characterizing the exhibited game contents and the game content parameter value characterizing the bid game contents; and an updating unit configured to update an owned game content storage unit such that, only when the determination unit determines that the exchange is concluded, the exhibited game contents are stored in association with player identification information of a bidder player and the bid game contents are stored in association with player identification information of an exhibitor player. 1. A video game system for providing video games to terminal devices of one or more players via a network , the video game system comprising:an owned game content storage unit configured to store one or more first game contents owned by a first player among the one or more players in association with first player identification information identifying the first player, and to store one or more second game contents owned by a second player among the one or more players in association with second player identification information identifying the second player;an exhibition request obtaining unit configured to obtain from the first player an exhibition request for exhibiting the first game contents;an exchange request obtaining unit configured to obtain from the second player an exchange request for exchanging the second game contents for the first game contents;a determination unit configured to determine whether or not to conclude an exchange of the first game contents and the second game contents based on comparison of a predetermined threshold value with a difference between a trade quantity of the first ...

System and method for producing hydrogen

Provided is a system and a method which allow hydrogen to be produced both efficiently and in a stable manner when using exhaust gas produced by power generation as a heat source for the dehydrogenation reaction, controlling the temperature of the dehydrogenation reaction within an appropriate range. The system (1) for producing hydrogen comprises a dehydrogenation reaction unit (51) for producing hydrogen from an organic hydride by a dehydrogenation reaction in presence of a dehydrogenation catalyst; a first power generation unit (2) for generating electric power from energy of combustion gas produced by combustion of fuel; a waste heat recovery unit (3) for receiving heat from exhaust gas expelled from the first power generation unit; a heat exchanger (21) provided in the waste heat recovery unit for exchanging heat between the exhaust gas and a heat medium; and a circulation line (L1-L3) for introducing the heat medium heated in the heat exchanger to the dehydrogenation reaction unit ...

Semiconductor Device

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the semiconductor chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the semiconductor chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the semiconductor chip and the base electrode, wherein both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member.

HETEROARYL CARBOXAMIDE COMPOUND

A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ξ (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ξ inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Electronic imaging apparatus

An electronic imaging apparatus is convenient to operate and can be easily configured according to interface, communication, and memory capacity requirements. The electronic imaging apparatus is constructed so that the imaging device, processing circuit, memory circuit, and central processing unit (CPU) are located within a main housing. The main housing includes an opening for receiving a plurality of PC cards of different types including memory cards and I/O cards. Accordingly, PC cards can be chosen and mounted in the opening to provide the electronic imaging apparatus with desired capacities and capabilities. Within the opening are a plurality of connection terminals that electrically connect to the PC cards. Each connection terminal can receive the different types of PC cards. The imaging device, processing circuit, memory circuit, CPU and each of the plurality of connection terminals are connected to a data bus. The CPU controls the activation of the processing circuit as well as ...

Method for producing nickel powder

Provided is a method for producing fine nickel powder used as suitable seed crystals for producing nickel powder from a solution containing a nickel ammine sulfate complex. The method for producing nickel powder sequentially includes: a mixing step of adding, to a solution containing a nickel ammine sulfate complex, a dispersant containing a sulfonate and an insoluble solid which is insoluble in the solution to form a mixed slurry; a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; and a separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder.

Camera module

A camera module for mobile device is reduced in size and production cost. CCDs, which are photoelectronic transducers, are formed in a surface of a semiconductor chip composing an image sensor, and an IR filter is bonded with an adhesive to cover the surface of the semiconductor chip. The IR filter has a filtering function in addition to a function to support the semiconductor chip. The IR filter is obtained by vacuum deposition of metal on a glass material or incorporating copper particles into a glass material, and implements both filtering function and chip-supporting function.

Game system

One object is to provide a video game system that can technically restrain real money trade. In accordance with one aspect, a server device 10 according to an embodiment of the present invention includes: a determination unit 58 configured to determine whether an exchange of exhibited game contents and bid game contents is concluded based on a game content parameter value characterizing the exhibited game contents and the game content parameter value characterizing the bid game contents; and an updating unit 61 configured to update an owned game content storage unit 52 such that, only when the determination unit 58 determines that the exchange is concluded, the exhibited game contents are stored in association with player identification information of a bidder player and the bid game contents are stored in association with player identification information of an exhibitor player.

Vehicle identification method and device

In order to improve an identification accuracy of a backlit number plate in a vehicle identification method and device which recognize a vehicle number from a number plate of a vehicle whose image is taken, an image frame of a vehicle is taken by an interlace method, irradiation is performed in an odd field and an even field composing the image frame with light of light quantities different from each other, images of the odd field and the even field are captured, and character recognition processing, only when character recognition processing of a number plate area extracted from an image of one field has ended in failure, of a number plate area extracted from an image of the other field is performed. Also, character recognition processings of number plate areas extracted from the images of the odd field and the even field respectively are performed in parallel, and a result of character recognition processing, only when character recognition processing of a number plate area extracted ...

Cutter machine

A cutter machine has a knife holder 13 mounted onto a cutter shaft 6 at the center portion, wherein a material to be cut is cut with knives 15 mounted onto the outer circumference of the knife holder 13 by rotating the knife holder 13 around the cutter shaft 6 . The knife holder 13 is separated into a fixing member 17 mounted onto the cutter shaft 6 and a mounting member 18 onto which the knives 15 are mounted. The mounting member 18 is pivotally supported around two axes with respect to the fixing member 17 . In the cutter machine, the knives and a die plate come into contact with each other by a small press force of the knives, thereby enabling a satisfactory cutting to be obtained.

Semiconductor device, electronic card and pad rearrangement substrate

A semiconductor device comprises a substrate, an external terminal provided on the substrate, an internal wiring pattern electrically connected to the external terminal, a semiconductor chip mounted on the substrate and electrically connected to the internal wiring pattern, and an antenna pattern. The antenna pattern provided at each of adjacent two corner portions of the substrate and is grounded.

Metal Strip, Connector, and Method of Manufacturing Metal Strip

A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a CuSn compound layer or a CuNiSn-compound layer on the Ni plating layer and a Sn layer or a SnCu-ally layer on the CuSn compound layer or the CuNiSn-compound layer. The metal strip is further fabricated into a connector. Thus, a metal strip, which has good soldability on a substrate, is free from the occurrence of whiskers at a terminal part during storage or upon fitting into FPC or FFC, and is necessary for a lead-free connector, can be realized.

Image reproduction apparatus for reproducing multiple image files

An image reproduction device reproduces image files, which may include sound information, for example, from recording media. The image reproduction device can reproduce a group of image files following various types of editing formats within the scope of the recording capacity limited by the recording media. The recording media is capable of recording multiple image files and scenario files recorded in a predefined format, which is either the reproduction order or the reproduction style of the image files. A scenario discrimination mechanism takes the scenario files from the recording media and discriminates either the reproduction order or the reproduction style based on the file formats. A reproduction mechanism reproduces the image files read in from the recording media according to either the reproduction order or the reproduction style discriminated by the scenario discrimination mechanism.

Method for producing nickel powder

A method for producing nickel powder sequentially includes: a mixing step of adding, to a nickel ammine sulfate complex solution, an insoluble solid as seed crystals and a polyacrylate or lignosulfonate as a dispersant to form a mixed slurry; and a reduction and precipitation step of charging a reaction vessel with the mixed slurry and blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions in the mixed slurry to form nickel precipitate on the surface of the insoluble solid, wherein the amount of the dispersant added in the mixing step is controlled to control the number of the nickel powder obtained by formation of the nickel precipitate in the reduction and precipitation step.

Image editing apparatus

An image editing apparatus includes a recording medium for recording an image file and a scenario file, wherein the scenario file is formed by recording a replay order or a replay condition of the image file with a predetermined file format, a scenario evaluating circuit for reading the scenario file from the recording medium and evaluating the replay order or the replay condition, an editor for editing the image file in response to an evaluation by the scenario evaluating circuit, and a recorder for recording the image file on the recording medium.

Communication device, address input supporting method, and information storage medium

Input of an address including a network number and a host number can be facilitated. During data communication, part or all of the network number of a destination IP address is acquired and sequentially stored. When an IP address is to be input, part or all of one network number is selected among those which have been stored based on user designation, and user input of any remaining part of the network number and the host number is received. The part or all of the network number and any remaining part of the network number and the host number are combined to form an input IP address.

Plurality of lead frames for cooling a power device

A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately ...

Method for producing nickel powder

Provided is nickel powder obtained by adding seed crystals to a nickel ammine complex solution and performing hydrogen reduction reaction under high temperatures and high pressures, wherein the nickel powder does not produce dust during handling, and a container can be efficiently filled with the nickel powder. The method for producing nickel powder includes: adding seed crystals and a surfactant having a nonionic or anionic functional group to a solution containing a nickel ammine complex to forma mixed slurry; and subjecting the mixed slurry to hydrogen reduction under high temperature and high pressure conditions in a pressure vessel to obtain nickel powder from the mixed slurry.

Polishing/cleaning method as well as method of making a wiring section using a polishing apparatus

A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.

Camera module and manufacturing method thereof

A camera module for a mobile device is reduced in size and manufacturing cost. A filter material made of a multi-layer thin film is bonded to a surface of a lens which is bonded to a surface of an image sensor chip. The filter material is a filter to block radiation within a predetermined range of wave length in an incident radiation to the lens, for example, an IR filter to block infrared radiation. An iris material made of a film such as an acrylic film or a polyolefin film is bonded to the lens covered with the filter material.

SYSTEM, METHOD, AND STORAGE MEDIUM STORING A PROGRAM FOR PROVIDING ONLINE GAME ALLOWING EXCHANGE OF GAME ITEMS BETWEEN USERS

One object is to provide a game system restraining real money trade in a technical aspect. The game system includes one or more computer processors for executing a computer program to provide a game played by a plurality of users. The computer program includes: an exhibition request receiving module for receiving, from a first user among the plurality of users, an exhibition request for exhibiting a first game item owned by the first user; an exchange request receiving module for receiving, from a second user among the plurality of users, an exchange request for exchanging a second game item owned by the second user for the first game item exhibited by the first user; and a re-exhibition information presenting module for presenting, to part or all of the plurality of users, re-exhibition item information indicating that the second game item is exhibited for exchange for the first game item. 1. A system comprising one or more computer processors configured to execute a computer program to provide a game capable of being played by a plurality of users , an exhibition request receiving module configured to receive, from a first user among the plurality of users, an exhibition request for exhibiting a first game item owned by the first user;', 'an exchange request receiving module configured to receive, from a second user among the plurality of users, an exchange request for exchanging a second game item owned by the second user for the first game item exhibited by the first user; and', 'a re-exhibition information presenting module configured to present, to part or all of the plurality of users, re-exhibition item information indicating that the second game item is exhibited for exchange for the first game item., 'wherein the computer program comprises2. The system of wherein the computer program further comprises an exchange module configured to perform claim 1 , upon receiving from a third user among the plurality of users an exchange request for exchanging the first ...

Cutter machine

A cutter machine having a knife holder 13 mounted onto a cutter shaft 6 at the center portion, wherein a material to be cut is cut with knives 15 mounted onto the outer circumference of the knife holder 13 by rotating the knife holder 13 around the cutter shaft 6, characterized in that the knife holder 13 is separated into a fixing member 17 mounted onto the cutter shaft 6 and a mounting member 18 onto which the knives 15 are mounted, wherein the mounting member 18 is pivotally supported around more than two axes with respect to the fixing member 17. In the cutter machine, the knives and a die plate come into contact with each other by a small press force of the knives without any usage of the resilient effect resulting from a gum bush, a metal plate or the like, thereby enabling a satisfactory cutting to be obtained.

Semiconductor device, electronic card and pad rearrangement substrate

A semiconductor device comprises a substrate, an external terminal provided on the substrate, an internal wiring pattern electrically connected to the external terminal, a semiconductor chip mounted on the substrate and electrically connected to the internal wiring pattern, and an antenna pattern. The antenna pattern provided at each of adjacent two corner portions of the substrate and is grounded.

SEMICONDUCTOR DEVICE

To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire. 119-. (canceled)20. A method of manufacturing a semiconductor device , comprising the steps of:(a) providing a lead frame including a chip mounting portion, a source lead, and a gate lead, wherein each of the chip mounting portion, the source lead, and the gate lead are electrically separated;(b) providing a semiconductor chip including a power MOSFET, an obverse surface, and a reverse surface opposite the obverse surface,wherein a source electrode pad and a gate electrode pad are formed on the obverse surface, andwherein a drain electrode is formed on the reverse surface;(c) mounting the semiconductor chip over a top surface of the chip mounting portion and connecting the drain electrode of the semiconductor chip and the chip mounting portion electrically;(d) connecting the metal ribbon to the source electrode pad of the semiconductor chip and to the first lead of the lead frame electrically using a first bonding tool; and(e) after the step (d), connecting the metal wire to the gate electrode pad of the semiconductor chip and to the first lead of the lead frame electrically using a second bonding tool.21. The method of manufacturing a semiconductor device according to claim 20 ,wherein in the step (d), said connection of the metal ribbon and the source electrode pad of the semiconductor chip is made two or more times.22. The method of manufacturing a ...

IMAGE PROCESSING APPARATUS AND METHOD

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Semiconductor device and manufacturing method of the same

This invention miniaturizes a package of a semiconductor device and simplifies a manufacturing procedure to reduce a manufacturing cost. A semiconductor wafer formed of a plurality of semiconductor chips formed with MEMS devices and wiring thereof on front surface thereof and a cap arrayed wafer disposed with a plurality of sealing caps are attached to seal the MEMS devices in cavities between them. Then, a plurality of via-holes is provided penetrating through the semiconductor wafer to form embedded electrodes therein, and bump electrodes are formed thereon. After this procedure, this structure is cut along scribe lines to be divided into each of packages.

METHOD FOR PRODUCING NICKEL POWDER

Provided is a method for producing nickel powder from a nickel ammine sulfate complex solution, comprising treatment steps of: (1) a seed crystal production step of producing nickel powder having an average particle size of 0.1 to 5 μm; (2) a seed crystal addition step of adding the nickel powder obtained in the step (1) as seed crystals to form a mixed slurry; (3) a reduction step of forming a reduced slurry containing nickel powder formed by precipitation of a nickel component in the mixed slurry on the seed crystals; and (4) a growth step of performing solid-liquid separation to separate and recover the nickel powder as a solid phase component and then blowing hydrogen gas into a solution prepared by adding the nickel ammine sulfate complex solution to the recovered nickel powder to grow the nickel powder to form high purity nickel powder. 1. A method for producing nickel powder from a nickel ammine sulfate complex solution , the method comprising treatment steps of:(1) a seed crystal production step of mixing a nickel sulfate solution and hydrazine to produce nickel powder having an average particle size of 0.1 to 5 μm serving as seed crystals;(2) a seed crystal addition step of adding the nickel powder having an average particle size of 0.1 to 5 μm obtained in the step (1) as seed crystals to the nickel ammine sulfate complex solution to form a mixed slurry;(3) a reduction step of blowing hydrogen gas into the mixed slurry obtained in the seed crystal addition step (2) to form a reduced slurry containing nickel powder formed by precipitation of a nickel component in the mixed slurry on the seed crystals; and(4) a growth step of subjecting the reduced slurry obtained in the reduction step (3) to solid-liquid separation to separate and recover the nickel powder as a solid phase component and then blowing hydrogen gas into a solution prepared by adding the nickel ammine sulfate complex solution to the recovered nickel powder to grow the nickel powder to form high ...

Vehicle identification method and device

In order to improve an identification accuracy of a backlit number plate in a vehicle identification method and device which recognize a vehicle number from a number plate of a vehicle whose image is taken, an image frame of a vehicle is taken by an interlace method, irradiation is performed in an odd field and an even field composing the image frame with light of light quantities different from each other, images of the odd field and the even field are captured, and character recognition processing, only when character recognition processing of a number plate area extracted from an image of one field has ended in failure, of a number plate area extracted from an image of the other field is performed. Also, character recognition processings of number plate areas extracted from the images of the odd field and the even field respectively are performed in parallel, and a result of character recognition processing, only when character recognition processing of a number plate area extracted ...

Filter member and screen changer for use in resin extruder

A filter member includes a breaker plate having an increased filtering area without any deterioration in screen back-up capability. This filter member is adapted to filter off impurities of resin melt and is disposed in a resin passage. The filter member includes a screen and a breaker plate for backing up the screen. The breaker plate has resin passageways in the form of elongated slits extending as intersecting the flow direction of resin material.

METHOD FOR PRODUCING NICKEL POWDER

Provided is a method for producing fine nickel powder used as suitable seed crystals for producing nickel powder from a solution containing a nickel ammine sulfate complex. The method for producing nickel powder sequentially comprises: a mixing step of adding, to a solution containing a nickel ammine sulfate complex, an insoluble solid which is insoluble in the solution to form a mixed slurry; a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; and a separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder. 1. A method for producing nickel powder , sequentially comprising:a mixing step of adding, to a solution containing a nickel ammine sulfate complex, an insoluble solid which is insoluble in the solution to form a mixed slurry;a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry while maintaining a pressure of a gas phase part in the reaction vessel at 1.0 to 4.0 MPa, to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; anda separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder.2. The method for producing nickel powder according to claim 1 , wherein ammonium sulfate included in the solution containing a nickel ammine sulfate complex has a concentration of 10 to 500 g/L.3. The method for producing nickel powder according to claim 2 , wherein claim 2 , in the reduction step claim 2 , the mixed slurry when the hydrogen gas is blown has a temperature of 150 to 200° C.4. (canceled)5. The method ...

Camera module and manufacturing method thereof

A camera module for a mobile device is reduced in size and manufacturing cost. A filter material made of a multi-layer thin film is bonded to a surface of a lens which is bonded to a surface of an image sensor chip. The filter material is a filter to block radiation within a predetermined range of wave length in an incident radiation to the lens, for example, an IR filter to block infrared radiation. An iris material made of a film such as an acrylic film or a polyolefin film is bonded to the lens covered with the filter material.

Junction material, manufacturing method thereof, and manufacturing method of junction structure

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer ( 101 ), Al-based metallic layers ( 102 a , 102 b ) on both sides thereof, and X-based metallic layers ( 103 a , 103 b ) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers ( 102 a , 102 b ), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

Method of molding anisotropic composite material and die using anisotropic composite material

Provided is a method of molding a composite material by laser metal deposition in which a powder metal material is irradiated with a laser beam while supplying the powder metal material onto a surface of a base material, in which the powder metal material is a mixed powder of an Fe alloy powder and a Cu powder, and a mixing ratio of the Fe alloy powder and the Cu powder is 15% or more and 30% or less by weight % of the Cu powder, and in which the composite material having anisotropy is molded by setting energy of the laser beam to be 9 KJ/g or more and 10 KJ/g or less in a mixed powder ratio.

Electronic camera

An electronic camera having a plurality of functions including capturing and recording images is provided. The electronic camera includes an operation input unit for inputting external operations that designate corresponding functions of the camera to be performed, an image pickup unit for capturing the image of an object, and a recorder for recording the image captured by the image pickup unit. The electronic camera further includes a playback unit for at least playing back image information that is recorded on the recording medium and a mode selector for selecting one operation mode of the camera from a plurality of available operation modes that include an operation explanation mode. If the operation explanation mode is selected at the mode selector, the playback unit plays back an operation guide that is pre-stored in a memory, the operation guide explaining at least one of the camera operations and functions thereof.

CONNECTING MATERIAL, METHOD FOR MANUFACTURING CONNECTING MATERIAL, AND SEMICONDUCTOR DEVICE

In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, when an Al series alloy layer is left after the connection, since the soft Al functions as a stress buffer material, the high connection reliability can be achieved.

Semiconductor device and automotive ac generator

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

Image signal recording/reproduction apparatus, method employed therein, and image signal recording apparatus

A dynamic image recording button and a still image recording button are provided at the main unit of a movie camera. A magneto-optical recording medium is loaded in a slot. If the dynamic image recording button or the still image recording button is operated during a reproduction operation, the reproduction operation is interrupted in a state in which the mechanical drive (rotation) of the magneto-optical recording medium is sustained. At this point, a dynamic image signal or a still image signal obtained through a photographing operation performed at the camera unit is temporarily recorded in a buffer memory, and is written in the magneto-optical recording medium when a write in the magneto-optical recording medium becomes enabled. Instructions to record dynamic images and to record still images can be issued to the movie camera through a touch-panel provided on the screen of a liquid crystal display unit. Even when operation cannot be performed through the touch-panel, the instructions can be issued through the dynamic image recording button or the still image recording button.

Die for manufacturing resin pellets

A die for manufacturing resin pellets capable of processing a die plate easily, and achieving simplification of a construction of heat channels and enhancement of heating efficiency. A die 1 for manufacturing resin pellets provided with a number of nozzle orifices 7 in the outer surface of the die, there are provided a plurality of rows of heat channels 8 which extend in a direction crossing the resin channels 5 in the vicinity of the outer surface of the die and are arranged along the resin channels 5. At least one of an introducing course and a discharging course for a heat medium in the plurality of heat channels 8.

Non-volatile memory device having a cell transistor and a non-cell transistor

A nonvolatile semiconductor memory device has a cell transistor and a non-cell transistor which are covered with an interlayer insulator film (228). The non-cell transistor has a first insulator film (212) formed on a semiconductor substrate (210); a first gate electrode (214b) formed on the first insulator film; a second insulator film (216b) formed on the first gate electrode in a first area of the gate electrode, the first area being a part of the first gate electrode; a second gate electrode (218b) formed on the second insulator film; and a contact portion (234) embedded in a contact hole (232) of the interlayer insulator film (228) to contact the first gate electrode in a second area of the first gate electrode, wherein the second insulator film is not formed on the second area and the contact portion is out of contact with the second insulator film.

RESIN GRANULATING APPARATUS

In a resin granulating apparatus of the present invention, a bracket extending in the outward radial direction over an outer peripheral surface of a sleeve is provided for the sleeve for rotatably supporting a cutter shaft of a cutter for shearing a material extruded from a die. Stopper means cooperating with the bracket to regulate movement of the sleeve toward the die and moving a regulation position in the axial direction is provided on the radially outer side over an outer diameter of the sleeve. With such a configuration, installation space is compactified so as to additionally provide the stopper means in the existing facilities, and a position of the cutter relative to a die surface is precisely adjusted so as to stably produce a pellet of a best shape.

Semiconductor device

The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

Semiconductor device and manufacturing method of the same

This invention miniaturizes a package of a semiconductor device and simplifies a manufacturing procedure to reduce a manufacturing cost. A semiconductor wafer formed of a plurality of semiconductor chips formed with MEMS devices and wiring thereof on front surface thereof and a cap arrayed wafer disposed with a plurality of sealing caps are attached to seal the MEMS devices in cavities between them. Then, a plurality of via-holes is provided penetrating through the semiconductor wafer to form embedded electrodes therein, and bump electrodes are formed thereon. After this procedure, this structure is cut along scribe lines to be divided into each of packages.

SEMICONDUCTOR DEVICE

To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

Semiconductor device and automotive AC generator

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

Semiconductor Device And Production Method For Semiconductor Device

A power semiconductor device in which a semiconductor element is die-mount-connected onto a lead frame in a Pb-free manner. In a die-mount-connection with a large difference of thermal expansion coefficient between a semiconductor element 1 and a lead frame 2, the connection is made with an intermetallic compound 200 having a melting point of 260° C. or higher or a Pb-free solder having a melting point of 260° C. or higher to 400° C. or lower, at the same time, the thermal stress produced in temperature cycles is buffered by a metal layer 100 having a melting point of 260° C. or higher. A Pb-free die-mount-connection which does not melt at the time of reflowing but have no chip crack to occur according to thermal stress can be achieved.

Polishing apparatus, cleaning apparatus to be used for such a polishing apparatus and polishing/cleaning method as well as method of making a wiring section

A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.

Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer

Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.

JUNCTION MATERIAL, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF JUNCTION STRUCTURE

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (), Al-based metallic layers () on both sides thereof, and X-based metallic layers () (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction. 1. A junction material formed by laminating a first Al-base layer formed of a metal with a main component of Al and a first X-base layer in this order on a first main surface of a Zn-base layer formed of a metal with a main component of Zn , wherein the X-base layer is formed of a metal with a main component selected from Cu , Au , Ag and Sn.2. The junction material according to claim 1 ,wherein a second Al-base layer formed of a metal with a main component of Al and a second X-base layer are laminated in this order on a second main surface opposite the first main surface of the Zn-base layer; andthe second X-base layer is formed of a metal with a main component selected from Cu, Au, Ag and Sn.3. The junction material according to claim 1 , wherein the second main surface opposite the first main surface of the Zn-base layer is connected to a substrate.4. The junction material according to claim 1 , wherein the Zn-base layer is formed of one of a single body layer and an alloy layer with a main component of Zn by 90 to 100 wt. %.5. The junction material according to claim 1 , wherein ...

Content distribution system and content distribution method

A content distribution system which assures reliability of content is provided. Permitted-user information corresponding to a user who is permitted to use content to be distributed is associated with the content. In the case where user specific information which specifies a user and the permitted-user information do not have a predetermined relation, a user terminal transmits the user specific information and the permitted-user information to a server. The server generates user-related information in which the received user specific information is set as a distribution destination and the permitted-user information is set as a distributor, generates new permitted-user information so as to have the predetermined relation with the user specific information, and provides the new permitted-user information to the user terminal. The user terminal which obtains the new permitted-user information changes the permitted-user information to the new permitted-user information.

METHOD FOR PRODUCING NICKEL POWDER

Provided is nickel powder obtained by adding seed crystals to a nickel ammine complex solution and performing hydrogen reduction reaction under high temperatures and high pressures, wherein the nickel powder does not produce dust during handling, and a container can be efficiently filled with the nickel powder. The method for producing nickel powder includes: adding seed crystals and a surfactant having a nonionic or anionic functional group to a solution containing a nickel ammine complex to forma mixed slurry; and subjecting the mixed slurry to hydrogen reduction under high temperature and high pressure conditions in a pressure vessel to obtain nickel powder from the mixed slurry. 1. A method for producing nickel powder , comprising: adding , in order , seed crystals of nickel powder having voids and a surfactant having a nonionic or anionic functional group to a solution containing a nickel ammine complex to form a mixed slurry; and subjecting the mixed slurry to hydrogen reduction under high temperature and high pressure conditions in a pressure vessel to form reduced nickel powder from the mixed slurry and obtain a reduced slurry containing the reduced nickel powder; and subjecting the reduced slurry to solid-liquid separation treatment by washing and filtration to recover the reduced nickel powder; and then using the reduced nickel powder recovered as the seed crystals repeatedly at least twice to grow the nickel powder.2. A method for producing nickel powder , by adding , in order , seed crystals and a surfactant having a nonionic or anionic functional group to a solution containing a nickel ammine complex to form nickel powder , the seed crystals of nickel powder having voids , the method sequentially comprising:{'sub': 4', '4, '(1) a complexing step of adding ammonia gas or aqueous ammonia (NHOH) to a nickel sulfate (NiSO) solution to form an ammine complex of nickel to obtain a nickel ammine sulfate complex solution;'}(2) a seed crystal and surfactant ...

Camera module and manufacturing method thereof

A camera module for a mobile device is reduced in size and manufacturing cost. A first lens is bonded to a surface of an image sensor chip through an IR filter. A second lens is bonded onto the first lens forming a compound lens. In addition, an iris material is bonded onto the second lens. Bump electrodes, which are external connection terminals, are formed on a back surface of the image sensor chip and connected to a printed circuit board.

Semiconductor Device, Electronic Card and Pad Rearrangement Substrate

A semiconductor device comprises a substrate, an external terminal provided on the substrate, an internal wiring pattern electrically connected to the external terminal, a semiconductor chip mounted on the substrate and electrically connected to the internal wiring pattern, and an antenna pattern. The antenna pattern provided at each of adjacent two corner portions of the substrate and is grounded.

Image recording and replay apparatus

An image recording and replay apparatus can record a line drawing in stages and can reproduce the line drawing in stages so that it appears as if the line drawing is being drawn. A position input device externally takes in position coordinates from a screen. A recording device records the position coordinates taken in by the position input device in a recording medium corresponding to the order they were taken-in. An image drawing device reads out the position coordinates recorded by the recording device and draws an image by sequentially re-writing on the screen points corresponding to the position coordinates in the order in which the position coordinates were taken in by the position input device.

Semiconductor device

The invention discloses a semiconductor device. To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

Polishing apparatus with transfer arm for moving polished object without drying it

A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.

Sealing structure and manufacturing method thereof

Provided is a sealing structure including a housing that houses a heat generating member or a heat dissipation member thereinside, and a resin that is filled in the housing. In a sectional view, the housing includes a first recess portion in a position facing the heat generating member or the heat dissipation member.

Irradiation control device

In an irradiation control device which extends a longevity of an LED, a feedback control is performed to an irradiating portion by an output signal of a photo device provided in relation to the irradiating portion, thereby making brightness fixed. Alternatively, by performing image processing to an image taken by a camera, brightness on a screen is calculated, so that a feedback control is performed to the irradiating portion to make the brightness fixed. Alternatively, based on a recognition rate upon character recognition within the image taken by the camera, a feedback control is performed to the irradiating portion to make the brightness fixed.

Semiconductor device and manufacturing method of the same

In a semiconductor device having a package structure in which lead terminals connected to electrodes on both of the upper and lower surfaces of a semiconductor chip are exposed from both of the upper and lower surfaces and side surfaces of a sealing body formed of resin, electrodes of the semiconductor chip and the lead terminals are connected by Pb-free connection parts each having a configuration of connection layer/stress buffer layer/connection layer. In each connection part, the connection layer is formed of an inter-metallic compound layer having a melting point of 260° C. or higher or Pb-free solder having a melting point of 260° C. or higher, and the stress buffer layer is formed of a metal layer having a melting point of 260° C. or higher and having a function to buffer the thermal stress.

METHOD FOR PRODUCING COBALT POWDER

Provided is a method for producing cobalt powder with high reaction efficiency by controlling the amount of added seed crystals when cobalt powder is produced from a solution containing a cobalt ammine sulfate complex. The method sequentially includes: a mixing step of adding, to the solution containing a cobalt ammine sulfate complex, cobalt powder as seed crystals in an amount of 1.5 times or more and 3.0 times or less the amount of cobalt contained in the solution and then adding a dispersant in an amount of 1.5% by weight to 3.0% by weight of the added seed crystals to form a mixture slurry; and a reduction and precipitation step of charging a reaction vessel with the mixture slurry and then blowing hydrogen gas into the mixture slurry to reduce cobalt complex ions contained in the mixture slurry to form cobalt precipitate on the surface of the seed crystals. 1. A method of producing cobalt powder from a cobalt-containing material of an industrial intermediate including one or a mixture of two or more selected from cobalt and cobalt mixed sulfide , crude cobalt sulfate , cobalt oxide , cobalt hydroxide , cobalt carbonate , and cobalt powder , the method sequentially comprising:a mixing step of adding, to a solution containing a cobalt ammine sulfate complex in which a concentration of ammonium sulfate is in a range of 10 to 500 g/L and the cobalt-containing material is a cobalt supply source, cobalt powder having an average particle size of 0.1 to 5 μm as seed crystals in an amount of 1.5 times or more and 3.0 times or less an amount of cobalt contained in the solution and then adding a dispersant in an amount of 1.5% by weight to 3.0% by weight of the seed crystals added to form a mixture slurry; anda reduction and precipitation step of charging a reaction vessel with the mixture slurry, heating to a temperature of 150 to 200° C., blowing hydrogen gas into the mixture slurry while keeping the temperature, and maintaining a pressure of a gas phase part in the ...

Semiconductor device and automotive AC generator

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

CONTENT DISTRIBUTION SYSTEM AND CONTENT DISTRIBUTION METHOD

A content distribution system which assures reliability of content is provided. Permitted-user information corresponding to a user who is permitted to use content to be distributed is associated with the content. In the case where user specific information which specifies a user and the permitted-user information do not have a predetermined relation, a user terminal transmits the user specific information and the permitted-user information to a server. The server generates user-related information in which the received user specific information is set as a distribution destination and the permitted-user information is set as a distributor, generates new permitted-user information so as to have the predetermined relation with the user specific information, and provides the new permitted-user information to the user terminal. The user terminal which obtains the new permitted-user information changes the permitted-user information to the new permitted-user information.

CONNECTING MATERIAL, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 μm) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness of an Al layer needs to make as thick as possible in order to fully exhibit stress relaxation performance of the Al layer. 124.-. (canceled)25. A connecting member , comprising:an Al-based layer, andfirst and second Zn-based layers respectively provided on main surfaces of the Al-based layer,wherein a thickness ratio of the Al-based layer with respect to the first and second Zn-based layers is less than 0.59.26. The connecting member according to claim 25 , wherein the thickness ratio of the Al-based layer with respect to the first and second Zn-based layers is more than 0.52.27. The connecting member according to claim 25 , wherein a thickness of the Al-based layer is more than 10 μm and less than 50 μm.28. A method of manufacturing a connecting material used for clad-rolling claim 25 , comprising providing first and second Zn-based layers respectively on main surfaces of an Al-based layer claim 25 , wherein a thickness ratio of the Al-based layer with respect to the first and second Zn-based layers is less than 0.59.29. The method of manufacturing a connecting material according to claim 28 , wherein the thickness ratio of the Al-based layer with respect to the first and second Zn-based layers is more than 0.52.30. A method of manufacturing a semiconductor device claim 28 , comprising:placing a connecting material between a first member and a second member, andconnecting the first member and the second member to each other by heating and melting the connecting material,wherein the connecting material comprises a Zn layer provided on each of main surfaces of an Al layer, and the connecting is performed by totally melting the Al layer and the Zn layers of the connecting ...

IMAGE EDITING APPARATUS

An image editing apparatus includes a recording medium for recording an image file and a scenario file, wherein the scenario file is formed by recording a replay order or a replay condition of the image file with a predetermined file format, a scenario evaluating circuit for reading the scenario file from the recording medium and evaluating the replay order or the replay condition, an editor for editing the image file in response to an evaluation by the scenario evaluating circuit, and a recorder for recording the image file on the recording medium. 1. An image editing apparatus , comprising:a recording medium for storing an image file and a scenario file, wherein the scenario file is formed by recording a replay order or a replay condition of the image file with a predetermined file format;a scenario evaluating circuit for reading the scenario file from the recording medium and evaluating the replay order or the replay condition; andan editor for editing the image file in response to an evaluation by the scenario evaluating circuit.2. The image editing apparatus of claim 1 , further including a recorder for recording the image file on the recording medium.3. The image editing apparatus of claim 1 , wherein the scenario file comprises at least one of a replaying speed of the image file claim 1 , a number of repetitions for replaying the image file claim 1 , a replay range of the image file claim 1 , a special effect claim 1 , and a replay of sound associated with the image file.4. The image editing apparatus of claim 1 , wherein the scenario file includes identification data indicating if other scenario files are recorded as part of the scenario file; andwherein the scenario evaluating circuit evaluates the replay order of the image files by following the corresponding scenario file in a hierarchical manner based on the identification data.5. The image editing apparatus of claim 1 , further including:a manual replay circuit for replaying the image files recorded in ...

IMAGE SIGNAL RECORDING/REPRODUCTION APPARATUS, METHOD EMPLOYED THEREIN, AND IMAGE SIGNAL RECORDING APPARATUS

An image signal recording/reproduction apparatus having a generating apparatus that generates a dynamic image signal or a still image signal of a subject captured by an imaging apparatus; an operation apparatus that starts recording of the dynamic image signal or the still image signal generated by the generating apparatus; a recording apparatus that records the dynamic image signal or the still image signal into a recording medium through mechanical drive; a reproduction apparatus that reproduces the dynamic image signal or the still image signal recorded at the recording medium through mechanical drive; and a control apparatus that implements control so that the mechanical drive is sustained if the operation apparatus is operated while the dynamic image signal or the still image signal is being reproduced by the reproduction apparatus and so that the recording apparatus records the dynamic image signal or the still image signal in the recording medium. 1. An image signal recording/reproduction apparatus comprising:an imaging apparatus that captures an image of a subject to be taken;a generating apparatus that generates a dynamic image signal or a still image signal of the subject captured by said imaging apparatus;an operation apparatus that is operated to start recording of the dynamic image signal or the still image signal generated by said generating apparatus;a recording apparatus that records the dynamic image signal or the still image signal into a recording medium through mechanical drive;a reproduction apparatus that reproduces the dynamic image signal or the still image signal recorded at said recording medium through mechanical drive; anda control apparatus that implements control so that said mechanical drive is sustained if said operation apparatus is operated while the dynamic image signal or the still image signal is being reproduced by said reproduction apparatus and so that said recording apparatus records the dynamic image signal or the still ...

Image processing apparatus and method

An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Connecting material, method for manufacturing connecting material and semiconductor device

In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt.% or a Zn content of the Zn series alloy layer is 90 to 100 wt.%. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.

Semiconductor Device

To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire. 119-. (canceled)20. A semiconductor chip comprising:a semiconductor chip having an obverse surface over which a first electrode pad is formed and a reverse surface opposite the obverse surface;a die pad over which the semiconductor chip is mounted;a first lead electrically connected to the semiconductor chip; andan Al ribbon electrically connected to the first electrode pad of the semiconductor chip and the first lead;a sealing body sealing the semiconductor chip, a part of the first lead, and the Al ribbon,wherein the semiconductor chip is mounted over the die pad via an Ag paste such that the reverse surface of the semiconductor chip faces to the die pad, andwherein a portion of the die pad which the Ag paste contacts is an Ag plated layer.21. The semiconductor device according to claim 20 ,wherein a second electrode pad is formed over the obverse surface of the semiconductor chip,wherein a second lead is electrically connected to the semiconductor chip,wherein an Au wire is electrically connected to the second electrode pad of the semiconductor chip and the second lead, andwherein a portion of the second lead to which the Au wire is electrically connected is the Ag plated layer.22. The semiconductor device according to claim 20 ,wherein the first lead is formed by Cu, andwherein a portion of the first lead to which the Al ribbon is electrically connected ...

GAME SYSTEM

One object is to provide a video game system that can technically restrain real money trade. In accordance with one aspect, a server device according to an embodiment of the present invention includes: a determination unit configured to determine whether an exchange of exhibited game contents and bid game contents is concluded based on a game content parameter value characterizing the exhibited game contents and the game content parameter value characterizing the bid game contents; and an updating unit configured to update an owned game content storage unit such that, only when the determination unit determines that the exchange is concluded, the exhibited game contents are stored in association with player identification information of a bidder player and the bid game contents are stored in association with player identification information of an exhibitor player. 1. A video game system for providing video games to terminal devices of one or more players via a network , the video game system comprising:an owned game content storage unit configured to store one or more first game contents owned by a first player among the one or more players in association with first player identification information identifying the first player, and to store one or more second game contents owned by a second player among the one or more players in association with second player identification information identifying the second player;an exhibition request obtaining unit configured to obtain from the first player an exhibition request for exhibiting the first game contents;an exchange request obtaining unit configured to obtain from the second player an exchange request for exchanging the second game contents for the first game contents;a determination unit configured to determine whether or not to conclude an exchange of the first game contents and the second game contents based on a first game content parameter value characterizing the first game contents and a second game content ...

METHOD FOR PRODUCING NICKEL POWDER

A method for producing nickel powder sequentially includes: a mixing step of adding, to a nickel ammine sulfate complex solution, an insoluble solid as seed crystals and a polyacrylate or lignosulfonate as a dispersant to form a mixed slurry; and a reduction and precipitation step of charging a reaction vessel with the mixed slurry and blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions in the mixed slurry to form nickel precipitate on the surface of the insoluble solid, wherein the amount of the dispersant added in the mixing step is controlled to control the number of the nickel powder obtained by formation of the nickel precipitate in the reduction and precipitation step. (120 words) 1. A method for producing nickel powder , sequentially comprising:a mixing step of adding a polyacrylate to a solution containing a nickel ammine sulfate complex to form a mixed solution; anda reduction and precipitation step of charging a reaction vessel with the mixed solution and blowing hydrogen gas into the mixed solution in the reaction vessel to bring the hydrogen gas into contact with the mixed solution to reduce nickel complex ions in the mixed solution to precipitate nickel to form nickel powder.2. A method for producing nickel powder , sequentially comprising:a mixing step of adding, to a solution containing a nickel ammine sulfate complex, an insoluble solid as seed crystals and a polyacrylate or lignosulfonate as a dispersant to form a mixed slurry; anda reduction and precipitation step of charging a reaction vessel with the mixed slurry and blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions in the mixed slurry to form precipitate of nickel particles on a surface of the insoluble solid.3. A method for producing nickel powder , sequentially comprising:a mixing step of adding, to a solution containing a nickel ammine sulfate complex, an insoluble solid as seed crystals and a ...

METHOD FOR PRODUCING NICKEL POWDER HAVING LOW CARBON CONCENTRATION AND LOW SULFUR CONCENTRATION

Provided a production method for reducing the content level of sulfur and carbon which are impurities in nickel powder to improve the quality of nickel powder produced by a complexing reduction method. The method of producing nickel powder having low carbon and sulfur concentrations includes: a complexing treatment of adding a complexing agent to a nickel sulfate aqueous solution to form a solution containing nickel complex ions; maintaining the solution containing nickel complex ions at a solution temperature of 150 to 250° C. in a pressure vessel and blowing hydrogen gas into the solution containing nickel complex ions to perform hydrogen reduction to produce nickel powder; washing the nickel powder with water; and then roasting the nickel powder washed with water in a mixed gas atmosphere of nitrogen and hydrogen. 1. A method of producing nickel powder having low carbon and sulfur concentrations , the method sequentially comprising:a complexing treatment of adding a complexing agent to a nickel sulfate aqueous solution to prepare a solution containing nickel complexions;a hydrogen reduction treatment of charging the solution containing nickel complex ions in a pressure vessel, maintaining the solution at a solution temperature of 150 to 250° C., and blowing hydrogen gas into the solution containing nickel complex ions to perform hydrogen reduction to produce nickel powder;a water-washing treatment of washing the nickel powder with water of which amount is at least equal to and at most 5 times larger than a weight of the nickel powder at a solution temperature of 50 to 90° C., or of subjecting a mixture of the nickel powder and water to ultrasonic washing under low pressure, to thereby produce nickel powder having reduced content levels of carbon and sulfur; anda roasting treatment of roasting the nickel powder washed with water in a mixed gas atmosphere of nitrogen and hydrogen having a concentration of 2 to 4% by weight.2. The method of producing nickel powder ...

System and method for producing hydrogen

Provided is a system and a method which allow hydrogen to be produced both efficiently and in a stable manner when using exhaust gas produced by power generation as a heat source for the dehydrogenation reaction, controlling the temperature of the dehydrogenation reaction within an appropriate range. The system ( 1 ) for producing hydrogen comprises a dehydrogenation reaction unit ( 51 ) for producing hydrogen from an organic hydride by a dehydrogenation reaction in presence of a dehydrogenation catalyst; a first power generation unit ( 2 ) for generating electric power from energy of combustion gas produced by combustion of fuel; a waste heat recovery unit ( 3 ) for receiving heat from exhaust gas expelled from the first power generation unit; a heat exchanger ( 21 ) provided in the waste heat recovery unit for exchanging heat between the exhaust gas and a heat medium; and a circulation line (L 1 -L 3 ) for introducing the heat medium heated in the heat exchanger to the dehydrogenation reaction unit in liquid form, and returning the heat medium expelled from the dehydrogenation reaction unit to the heat exchanger; wherein the heat medium is introduced into the dehydrogenation reaction unit at an introduction temperature ranging between 352° C. and 392° C., the heat medium is expelled from the dehydrogenation reaction unit at an expulsion temperature ranging between 337 ° C. and 367 ° C., and a difference between the introduction temperature and the expulsion temperature ranges between 10° C. and 50° C.

SEMICONDUCTOR DEVICE

A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate. 1. A semiconductor device comprising:an insulating substrate that has a first surface and a second surface positioned opposite to the first surface, and is provided with a plurality of wiring parts on the first surface;a semiconductor chip mounted on any of the plurality of wiring parts; anda resin part disposed around each of the plurality of wiring parts,wherein a side face of any of the plurality of wiring parts includes a first region in which a plating film is formed, a second region that is positioned in a direction away from the first surface of the insulating substrate from the first region and in which the plating film is not formed, and a third region having a metal uneven part with unevenness made of metal between the first region and the second region; andthe resin part is bonded to the metal uneven part, the plating film and the first surface of the insulating substrate.2. (canceled)3. The semiconductor device according to claim 1 ,wherein the first region has a larger area than the third region.4. The semiconductor device according to claim 1 ,wherein the metal uneven part is an uneven part formed of metal particles.5. The semiconductor device according to claim 1 ,wherein the metal uneven part ...

GAME SYSTEM

One object is to provide a video game system that can technically restrain real money trade. In accordance with one aspect, a server device according to an embodiment of the present invention includes: a determination unit configured to determine whether an exchange of exhibited game contents and bid game contents is concluded based on a game content parameter value characterizing the exhibited game contents and the game content parameter value characterizing the bid game contents; and an updating unit configured to update an owned game content storage unit such that, only when the determination unit determines that the exchange is concluded, the exhibited game contents are stored in association with player identification information of a bidder player and the bid game contents are stored in association with player identification information of an exhibitor player. 1. A video game system for providing video games to terminal devices of one or more players via a network , the video game system comprising:an owned game content storage unit configured to store one or more first game contents owned by a first player among the one or more players in association with first player identification information identifying the first player, and to store one or more second game contents owned by a second player among the one or more players in association with second player identification information identifying the second player;an exhibition request obtaining unit configured to obtain from the first player an exhibition request for exhibiting the first game contents;an exchange request obtaining unit configured to obtain from the second player an exchange request for exchanging the second game contents for the first game contents;a determination unit configured to determine whether or not to conclude an exchange of the first game contents and the second game contents based on comparison of a predetermined threshold value with a difference between a trade quantity of the first ...

Electronic Control Device

An electronic control device includes: a circuit board; an electronic component; and a bonding portion bonding the circuit board and the electronic component to each other. The bonding portion contains Sn as a main component, Bi and Sb in a total content ratio of 3 wt % or more, and Ag in a content of 3 to 3.9 wt %, with no In. 1. An electronic control device , comprising:a circuit board;an electronic component; anda bonding portion bonding the circuit board and the electronic component to each other,wherein the bonding portion contains Sn as a main component, Bi and Sb in a total content ratio of 3 wt % or more, and Ag in a content of 3 to 3.9 wt %, with no In.2. The electronic control device according to claim 1 , whereina Bi content of the bonding portion is less than 2.5 wt %, andan intermetallic compound formed at an interface between the electronic component and the bonding portion has a particle size of 2 μm or more, and includes at least one of a Cu—Sn compound and a Ni—Sn compound.3. The electronic control device according to claim 1 , wherein the bonding portion does not contain Bi.4. The electronic control device according to claim 1 , whereinan electrode of the circuit board is any one of Cu, an alloy containing Cu as a main component, and a Cu plating, anda terminal electrode of the electronic component is Ni-plated.5. The electronic control device according to claim 1 , whereinthe electronic component is a leadless component, andthe electronic control device has an electromechanically integrated configuration. The present invention relates to an electronic control device.The use of lead included in electronic control devices mounted on automobiles is regulated according to the RoHS directives and the ELV directives. Accordingly, non-use of lead has been promoted by lead-free solder mainly as Sn—3Ag—0.5Cu (wt %). In order to improve bondability in a bonding portion formed by solder, a method of adding an additive element to the solder has been studied. ...

SEMICONDUCTOR DEVICE AND POWER ELECTRONICS APPARATUS

A semiconductor device is provided, the semiconductor device having: a semiconductor chip; a wiring substrate which supports the semiconductor chip and is electrically connected to the semiconductor chip; a first metal plate which supports the wiring substrate; a second metal plate which is arranged between the wiring substrate and the first metal plate; a first bonding part which bonds the wiring substrate and the second metal plate; and a second bonding part which bonds the first metal plate and the second metal plate, and having a thickness of an outer circumferential part of the second metal plate being larger than a thickness of a center part of the second metal plate. 1. A semiconductor device comprising:a semiconductor chip;a wiring substrate which supports the semiconductor chip and is electrically connected to the semiconductor chip;a first metal plate which supports the wiring substrate;a second metal plate which is arranged between the wiring substrate and the first metal plate;a first bonding part which bonds the wiring substrate and the second metal plate; anda second bonding part which bonds the first metal plate and the second metal plate,wherein a thickness of an outer circumferential part of the second metal plate is larger than a thickness of a center part of the second metal plate.2. The semiconductor device according to claim 1 ,wherein a linear expansion coefficient of the second metal plate has a value between a linear expansion coefficient of the wiring substrate and a linear expansion coefficient of the first metal plate.3. The semiconductor device according to claim 1 ,wherein the second bonding part, the second metal plate, the first bonding part, the wiring substrate, and the semiconductor chip are sequentially arranged on the first metal plate, andthe outer circumferential part of the second metal plate is positioned outside the wiring substrate when seen in a plan view.4. The semiconductor device according to claim 3 ,wherein, in a ...

COMPOSITE METAL MATERIAL, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING COMPOSITE METAL MATERIAL

The present invention provides: a composite metal material which is able to be controlled in terms of strength, thermal conductivity and thermal expansion amount; and a method for producing this composite metal material. A composite metal material according to the present invention has a Cu-rich phase and an Fe-rich phase; and this composite metal material has a composite metal phase wherein Fe-rich phases are independently dispersed in a Cu-rich phase. The Cu-rich phase has a Cu content of more than 85 wt %; and each Fe-rich phase has an Fe content of more than 50 wt %. 1. A composite metal material having a Cu-rich phase and an Fe-rich phase , wherein the composite metal material has a composite metal phase in which the Fe-rich phases are independently dispersed in the Cu-rich phase.2. The composite metal material according to claim 1 ,wherein the Cu-rich phase has a Cu content of more than 85 wt %, andwherein the Fe-rich phase has an Fe content of more than 50 wt %.3. The composite metal material according to claim 1 , wherein the Cu-rich phase contains 15 wt % or less of at least one kind of elements consisting of Fe claim 1 , Cr claim 1 , Ni claim 1 , and Co.4. The composite metal material according to claim 2 , having a Cu phase of which the Cu content of Cu metallically bonded to the composite metal phase via a bonding surface is 98 wt % or more.5. The composite metal material according to claim 4 , wherein the composite metal phase has a composite metal phase configured with at least two layers claim 4 , has a first layer made of a composite metal phase including a predetermined proportion of Fe-rich phases and a second layer made of a composite metal phase having more Fe-rich phases than the first layer claim 4 , one side of the first layer is metallically bonded to the Cu phase claim 4 , and the other side of the first layer is metallically bonded to the second layer.6. The composite metal material according to claim 4 , wherein the composite metal phase ...

IMAGE SIGNAL RECORDING/REPRODUCTION APPARATUS, METHOD EMPLOYED THEREIN, AND IMAGE SIGNAL RECORDING APPARATUS

A dynamic image recording button and a still image recording button are provided at the main unit of a movie camera. A magneto-optical recording medium is loaded in a slot. If the dynamic image recording button or the still image recording button is operated during a reproduction operation, the reproduction operation is interrupted in a state in which the mechanical drive (rotation) of the magneto-optical recording medium is sustained. At this point, a dynamic image signal or a still image signal obtained through a photographing operation performed at the camera unit is temporarily recorded in a buffer memory, and is written in the magneto-optical recording medium when a write in the magneto-optical recording medium becomes enabled. Instructions to record dynamic images and to record still images can be issued to the movie camera through a touch-panel provided on the screen of a liquid crystal display unit. Even when operation cannot be performed through the touch-panel, the instructions can be issued through the dynamic image recording button or the still image recording button. 1. An apparatus comprising:an imaging element that captures an image of a subject to be taken and outputs image data based on the image;a displaying unit that displays the image data in a display area, the display area being configured to receive an operation; anda control unit that switches a state where dynamic image data or still image data is not recorded even if the operation executed on the display area has been received, into a state where dynamic image data or still image data is recorded in response to receiving the operation executed on the display area, by receiving an operation on a predetermined image displayed in the displayed area.2. The apparatus according to claim 1 , further comprising:a first instruction member that is arranged at a position different from the display area; anda recording control unit that records dynamic image data or still image data in response to an ...

Lead-Free Solder Alloy and Semiconductor Device

A semiconductor device has: a semiconductor chip a connected member connected to the semiconductor chip via a solder alloy (lead-free solder alloy) and an external terminal electrically connected to the semiconductor chip The above-described solder alloy of the semiconductor device is composed of: Cu of 5 to 10 weight %; any one, two, or more of Bi of 1 weight % or more and 4 weight % or less, Sb of 1 weight % or more and less than 10 weight %, and In of 1 weight % or more and 4 weight % or less; and Sn as a residual. 1. A lead-free solder alloy having a solder composition comprising:Cu of 5 to 10 weight %;any one, two, or more of Bi of 1 weight % or more and 4 weight % or less, Sb of 1 weight % or more and less than 10 weight %, and In of 1 weight % or more and 4 weight % or less; andSn as a residual.2. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the Bi is added by 1 weight % or more and 4 weight % or less.3. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the In is added by 1 weight % or more and 4 weight % or less.4. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the Sb is added by 1 weight % or more and less than 10 weight %.5. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the Bi is added by 1 weight % or more and 4 weight % or less, and the In is added by 1 weight % or more and 4 weight % or less.6. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the Bi is added by 1 weight % or more and 4 weight % or less, and the Sb is added by 1 weight % or more and less than 10 weight %.7. The lead-free solder alloy according to claim 1 ,wherein, among the Bi, the Sb, and the In, the In is added by 1 weight % or more and 4 weight % or less, and the Sb is added by 1 weight % or more and less than 10 weight %.8. A semiconductor device comprising:a ...

Sealing Structure and Manufacturing Method Thereof

Provided is a sealing structure including a housing that houses a heat generating member or a heat dissipation member thereinside, and a resin that is filled in the housing. In a sectional view, the housing includes a first recess portion in a position facing the heat generating member or the heat dissipation member.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

In order to achieve both a reduction in thermal resistance and an improvement in thermal deformation absorbing property of a semiconductor device having a packaging structure in which a semiconductor chip is electrically connected to conductive members and via bonding members and the bonding members and each includes a stacked structure provided with, in the order from the side close to the semiconductor chip a nanospring layer configured from a plurality of springs having a nano-order size, a planar layer supporting the plurality of springs, and a bonding layer The thickness of the nanospring layer is larger than the thickness of the bonding layer and the thickness of the bonding layer is larger than the thickness of the planar layer

Soldering Device

A soldering device capable of shortening operation time of soldering and suppressing solder non-wetting is provided. A soldering device includes: a plurality of tubular solder piece guide tubes which have space therein for a solder piece supplied from a supply port to pass through; a first holding unit which holds the solder piece guide tubes; and a heating unit which heats the first holding unit. Tip end portions of the solder piece guide tubes on a soldering side are arranged on an inner side of the first holding unit. 1. A soldering device , comprising:a plurality of tubular solder piece guide tubes which have space therein for a solder piece supplied from a supply port to pass through;a first holding unit which holds the plurality of solder piece guide tubes; anda heating unit which heats the first holding unit,wherein tip end portions of the plurality of solder piece guide tubes on a soldering side are arranged on an inner side of the first holding unit.2. The soldering device according to claim 1 , wherein the first holding unit is a plate-shaped body made of metal claim 1 , in which a plurality of hole portions are formed claim 1 , and the plurality of solder piece guide tubes are inserted in the plurality of hole portions so as to be held in the first holding unit.3. The soldering device according to further comprising:a second holding unit which is arranged closer to a side of the supply port than the first holding unit and holds the plurality of solder piece guide tubes,wherein the plurality of solder piece guide tubes include a region exposed to external space between a portion thereof held by the first holding unit and a portion thereof held by the second holding unit.4. The soldering device according to claim 1 , wherein an end surface of the first holding unit is capable of abutting on a surface of an object to be soldered claim 1 , and the tip end portions of the solder piece guide tubes are arranged on the same plane as the end surface of the first ...

METHOD OF MOLDING ANISOTROPIC COMPOSITE MATERIAL AND DIE USING ANISOTROPIC COMPOSITE MATERIAL

Provided is a method of molding a composite material by laser metal deposition in which a powder metal material is irradiated with a laser beam while supplying the powder metal material onto a surface of a base material, in which the powder metal material is a mixed powder of an Fe alloy powder and a Cu powder, and a mixing ratio of the Fe alloy powder and the Cu powder is 15% or more and 30% or less by weight % of the Cu powder, and in which the composite material having anisotropy is molded by setting energy of the laser beam to be 9 KJ/g or more and 10 KJ/g or less in a mixed powder ratio. 1. A method of molding a composite material by laser metal deposition in which a powder metal material is irradiated with a laser beam while supplying the powder metal material onto a surface of a base material ,wherein the powder metal material is a mixed powder of an Fe alloy powder and a Cu powder, and a mixing ratio of the Fe alloy powder and the Cu powder is 15% or more and 30% or less by weight % of the Cu powder, andwherein the composite material having anisotropy is molded by setting energy of the laser beam to be 9 KJ/g or more and 10 KJ/g or less in a mixed powder ratio.2. The method according to claim 1 , wherein an output of the laser beam is 1800 W or more and 2000 W or less.3. The method according to claim 2 , wherein the mixed powder is supplied at a rate of 12 g/min or more and 13 g/min or less.4. The method according to claim 3 , wherein a scanning speed of the laser beam with respect to the base material is 1000 mm/min.5. A die having high thermal conductivity in a vertical direction claim 1 , molded by the method according to . The present invention relates to a molding technique for an anisotropic composite material and a molded product such as a die using the anisotropic composite material.As one of lamination-molding techniques, there is exemplified laser lamination-molding (laser metal deposition: sometimes referred to as LMD).JP 2016-211062 A is a cited ...

METHOD FOR PRODUCING PRECURSOR OF LITHIUM ADSORBENT

A method for producing lithium manganese oxide that is a precursor of a lithium adsorbent under atmospheric pressure is provided. The method for producing a precursor of a lithium adsorbent comprises tire following steps (1) to (3): 1. A method for producing a precursor of a lithium adsorbent comprises steps (1) to (3):{'sup': st', 'st, '(1) a 1mixing step the step of mixing a manganese salt and alkali hydroxide to obtain a 1slurry containing manganese hydroxide;'}{'sup': nd', 'st', 'nd, '(2) a 2mixing step the step of adding lithium hydroxide to the 1slurry, and mixing the mixture to obtain a 2slurry;'}{'sup': 'nd', '(3) an oxidation step: the step of adding an oxidizing agent to the 2slurry to obtain an oxide.'}2. The method for producing a precursor of a lithium adsorbent according to claim 1 , further comprising a step of firing the oxide after the oxidation step.3. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the oxidizing agent is sodium hypochlorite.4. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the manganese salt is manganese sulfate.5. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the manganese salt is manganese nitrate claim 1 , the alkali hydroxide is lithium hydroxide claim 1 , the oxidizing agent is ammonium peroxodisulfate and/or sodium peroxodisulfate.6. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the molar amount of the alkali hydroxide in the 1mixing step is 2 or more times and 10 or less times the molar amount of the manganese salt.7. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the molar amount of the lithium hydroxide in the 2mixing step is 4 or more times and 20 or less times the molar amount of the manganese salt.8. The method for producing a precursor of a lithium adsorbent according to claim 1 , wherein the ...

Multi centrifugal separator

画像デ−タメモリのアドレス制御方式

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

パンチング装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Classifier

Data processing method of microcomputer

4-(substituted phenyl)-5-halopyrimidine derivatives and herbicides containing the same as the active ingredient

4-(Substituted phenyl)-5-halopyrimidines of general formula (I) useful as herbicides; and boron compounds of general formula (VI) useful as intermediates for the preparation thereof: wherein j and k are both 0, or alternaltively either of them is 0 and the other is 1; Z, X?1 and Y1¿ are each halogeno; R?1 and R2¿ are each alkyl or the like; R16 is alkyl or the like; and R17 is a substituent on Ar.

New 3-substituted phenyl-4-halopyridazine derivative and agrochemical containing the same as active ingredient and its intermediate

(57)【要約】 （修正有） 【課題】 農薬、特に除草剤として有用な新規３−置換 フェニル−４−ハロピリダジン誘導体を提供する。 【解決手段】 下記一般式 で表される３−置換フェニル−４−ハロピリダジン誘導 体。化合物の具体的一例を示すと下記式になる。

Device for securing stationary vanes of turbine

Image processor

(57)【要約】 【課題】 動画像情報に対して画像処理を行う画像処理 装置に関し、操作者の手を煩わすことなく動画像情報の 区切りを確実に特定することを目的とする。 【解決手段】 動画像情報からなる画像ファイルを外部 から取り込む画像入力手段１０と、予め決められた条件 を満たす前記動画像情報の区切りを特定する区切り特定 手段１２と、前記区切り特定手段１２によって特定され た区切りを示す情報を前記画像ファイルに付加する情報 付加手段１４とを備えて構成される。

Centrifugal separator

Method for producing nickel powder

Provided is nickel powder obtained by adding seed crystals to a nickel ammine complex solution and performing hydrogen reduction reaction under high temperatures and high pressures, wherein the nickel powder does not produce dust during handling, and a container can be efficiently filled with the nickel powder. The method for producing nickel powder includes: adding seed crystals and a surfactant having a nonionic or anionic functional group to a solution containing a nickel ammine complex to forma mixed slurry; and subjecting the mixed slurry to hydrogen reduction under high temperature and high pressure conditions in a pressure vessel to obtain nickel powder from the mixed slurry.

Nickel powder production method

Provided is a method for producing fine nickel powder suitable for use as a seed crystal in the production of nickel powder from a solution containing a nickel sulfate ammine complex. The production method for nickel powder is characterized by producing nickel powder by performing, in order: a mixing step in which a solution containing the nickel sulfate ammine complex has added thereto an insoluble solid that is insoluble in the solution and a dispersant including a sulfonate, and a mixed slurry is formed; a reduction/precipitation step in which after the mixed slurry is introduced into a reaction tank, hydrogen gas is blown into the mixed slurry inside the reaction tank, nickel complex ions contained in the mixed slurry are reduced, and a nickel precipitate is formed on the surface of the insoluble solid; and a separation step in which the nickel precipitate on the surface of the insoluble solid is separated from the surface of the insoluble solid and nickel powder is formed.

Method for producing nickel powder having low carbon concentration and low sulfur concentration

Provided is a production method for reducing the content grades of sulfur and carbon, which are impurities contaminating a nickel powder, for the purpose of improving the quality of a nickel powder produced employing a complexing reduction process. A method for producing a nickel powder having a low carbon concentration and a low sulfur concentration, said method being characterized by comprising: carrying out a complexing treatment, wherein the complexing treatment comprises adding a complexing agent to an aqueous nickel sulfate solution to produce a solution containing nickel complex ions; blowing a hydrogen gas into the solution containing nickel complex ions while maintaining the solution at a liquid temperature of 150 to 250ºC in a pressure container to achieve hydrogen reduction, thereby producing a nickel powder; washing the nickel powder with water; and roasting the washed product under a nitrogen/hydrogen mixed gas atmosphere.

Method for producing nickel powder

Provided is an efficient method for producing nickel powder from a solution containing a nickel ammine complex, the method including adding seed crystals to a solution containing a nickel ammine complex and subjecting the resulting mixture to hydrogen reduction under high temperatures and high pressures to produce nickel powder, which makes it possible to maintain the quality of the nickel powder produced and reduce the amount of the seed crystals used. The method for producing nickel powder is characterized by adding seed crystals and a dispersant having an anionic functional group to the solution containing a nickel ammine complex to form a mixture slurry, and subjecting the mixture slurry to pressurized hydrogen reduction treatment by blowing hydrogen into the mixture slurry in a high temperature and high pressure atmosphere to cause a reduction reaction, thereby reducing the nickel ammine complex in the mixture slurry to obtain nickel powder.

Precision location device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Synthetic fiber manufacturing process

Process for forming deposited film and process for producing semiconductor device

Recording device having multiple circuits

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Cobalt powder production method

Provided is a production method that, using an industrially inexpensive H

Electronic camera with self-explanation/diagnosis mode

An electronic camera having a plurality of functions including capturing and recording images is provided. The electronic camera includes an operation input unit for inputting external operations that designate corresponding functions of the camera to be performed, an image pickup unit for capturing the image of an object, and a recorder for recording the image captured by the image pickup unit. The electronic camera further includes a playback unit for at least playing back image information that is recorded on the recording medium and a mode selector for selecting one operation mode of the camera from a plurality of available operation modes that include an operation explanation mode. If the operation explanation mode is selected at the mode selector, the playback unit plays back an operation guide that is pre-stored in a memory, the operation guide explaining at least one of the camera operations and functions thereof.

Image recording and editing apparatus, and method for capturing and editing an image

An image editing apparatus includes a recording medium for recording an image file and a scenario file, wherein the scenario file is formed by recording a replay order or a replay condition of the image file with a predetermined file format, a scenario evaluating circuit for reading the scenario file from the recording medium and evaluating the replay order or the replay condition, an editor for editing the image file in response to an evaluation by the scenario evaluating circuit, and a recorder for recording the image file on the recording medium.

Artificial reef

【課題】安定して海藻の育成に必要な成分を供給することができる人工礁、水中施肥材、水中施肥材の製造方法、ならびに水中施肥構造体の製造方法を提供することを目的とする。【解決手段】人工礁１は、本体部２と、本体部２の少なくとも一部に付着させて水中に設置する施肥材（水中施肥材３）と、を含む。本体部２は、内部に形成された内部空洞と、上部２ｂに形成され、内部空洞まで貫通する上部開口５と、側部２ｃに形成され、内部空洞まで貫通する側部開口６と、を有している。【選択図】図１

Electronic camera with reproduction and display of images at the same timing

An electronic camera with an image reproducing apparatus which starts concurrently reproducing a plurality of motion images at the same timing includes a display which displays on a screen a plurality of thumbnails (symbols) respectively corresponding to a plurality of motion images recorded on a recording medium, and a selector which selects some of the thumbnails displayed by the display in accordance with an external selecting operation. A reproducing device starts reproducing a plurality of motion images respectively corresponding to the thumbnails selected by the selector at the same timing in accordance with an external reproducing operation. The motion images reproduced by the reproducing device are displayed in the form of an array on the screen.

Command input method and recording medium

This invention relates to a game system. The game system has a window image including an action command frame and a non-action command frame. When it is a player's turn to designate an action parameter, the window image including the action command frame and the non-action command frame is displayed on a display plane of display means of the game player to enable the game player to select a command in the action command frame or the non-action command frame and accept the selected command. Concurrently, a window image solely including the non-action command frame is displayed on a display plane of display means of the game player who is not assigned with the turn to enable the non-assigned game player to designate the command in the non-action command frame on the window image and accept the designated command while allowing the game player to see an overall image in a game space through the window image. Accordingly, while the opponent game player is in turn of using the action command, the non-assigned game player utilizes the non-action command frame, thereby allowing the game players to participate in a game more positively to establish a more pleasant game environment.

Cobalt powder production method

Provided is a production method that, using an industrially inexpensive H2 gas, generates coarse-grained high-purity Co powder from a sulfuric acid cobalt amine complex solution by using minute Co powder. A production process is for generating a Co powder from a Co-containing substance, using a sulfuric acid cobalt amine complex solution, wherein the process is characterized by the following steps being carried out: a seed-crystal adding step for forming a mixed slurry by adding seed-crystal Co powder to the complex solution; a reducing step for blowing H2 gas into the mixed slurry and forming a reduced slurry which contains Co powder that precipitated on the seed crystals as a result of reducing the Co component in the slurry; a growing step for blowing H2 gas into the slurry in which the complex solution was added to the Co powder obtained by carrying out liquid-solid separation of the reduced slurry, and for forming a slurry which contains a grown Co powder in which the Co component in the slurry was precipitated on the surface of the Co powder; a recovery step which follows the reducing step and in which the Co powder is recovered by carrying out liquid-solid separation of the reduced slurry that contains the Co powder; and a recovery step which follows the growing step and in which the Co powder is recovered by carrying out liquid-solid separation of the slurry that contains the grown Co powder.

Process for forming deposited film and process for preparing semiconductor device

A deposited film formation method comprises the steps of: (a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and (b) maintaining the temperature of the electron donative surface within the range of the decomposition temperature of the organometallic compound or lower and 800 °C or lower to form a molybdenum film on the electron donative surface.

Method for producing nickel powder

Provided is a method for producing a nickel powder, whereby it becomes possible to produce a fine nickel powder, which can serve as seed crystals needed for the production of a nickel powder, in an amount needed for the production of the desired nickel powder from a solution containing a nickel sulfate-ammine complex. A method for producing a nickel powder through: a mixing step of adding insoluble solids that serve as seed crystal and a polyacrylic acid salt or a ligninsulfonic acid salt that serves as a dispersing agent to a nickel sulfate-ammine complex solution to form a mixed slurry; and a subsequent reduction/precipitation step of charging the mixed slurry in a reaction vessel, and then blowing a hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions in the slurry, thereby forming nickel precipitates on the surfaces of the insoluble solids. The method is characterized in that the amount of the dispersing agent to be added in the mixing step is controlled to control the number of nickel granules produced by the production of the nickel precipitates in the reduction/precipitation step.

Filter changer for resin extruder

Nickel powder production method

Provided is a method for producing fine nickel powder used as suitable seed crystals for producing nickel powder from a solution containing a nickel ammine sulfate complex. The method for producing nickel powder sequentially comprises: a mixing step of adding, to a solution containing a nickel ammine sulfate complex, an insoluble solid which is insoluble in the solution to form a mixed slurry; a reduction and precipitation step of charging a reaction vessel with the mixed slurry and then blowing hydrogen gas into the mixed slurry in the reaction vessel to reduce nickel complex ions contained in the mixed slurry to form nickel precipitate on a surface of the insoluble solid; and a separation step of separating the nickel precipitate on the surface of the insoluble solid from the surface of the insoluble solid to form nickel powder.

Easy loading device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Gas supplying apparatus

A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

Process for forming deposited film and process for producing semiconductor device

A process for forming a deposited film comprises the steps of; (a) disposing in a space for forming a deposited film a substrate having an electron donative surface; (b) introducing to the space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) forming a tungsten film on the electron donative surface.

Manufacturing method for nickel powder

Indan-1,3-dione derivative and herbicidal composition containing the same as active ingredient

The present invention provides an indan-1,3-dione derivative represented by the following formula (I): wherein R¹ represents a hydrogen atom or a lower alkyl group; R² represents a group represented by wherein E represents a (substituted) phenyl group or a (substituted) pyridyl group; Y represents a hydroxyl group; and Z represents a halogen atom, a (substituted) alkylsulfonyloxy group or a (substituted) phenylsulfonyloxy group, or Y and Z are bonded to represent -O-; and A represents a (substituted) 1,3-butadienylene group or a (substituted) 1,3-­azabutadienylene group, and a herbicidal composition containing the same as an active ingredient. The present invention further provides an indan-1,3-dione derivative represented by the following formula (II): wherein R¹ and A represent the same meanings as above and R³ represents a group represented by wherein E represents the same meanings as above; and W¹ and W² each represents hydroxyl group or form a carbon-carbon bond by combining with each other, which is available as a synthetic intermediate for the compound of the formula (I). The compound of the formula (I) shows high herbicidal activity against gramineous weeds, cyperaceous weeds, etc. but shows markedly low phytotoxicity against crops.

Image signal recording and reproducing device and image signal recording and reproducing method

(57)【要約】 【課題】 緊急に動画像信号または静止画像信号の記録 を開始する。 【解決手段】 ムービカメラの本体１に、動画像記録ボ タン６および静止画像記録ボタン７を設ける。再生動作 中に動画像記録ボタン６または静止画像記録ボタン７が 操作されたとき、ディスクの回転が継続されたまま、再 生動作が中断され、動画像信号または静止画像信号の記 録が緊急的にバッファに記憶される。

Method for producing nickel powder

Provided is an efficient method for producing nickel powder from a solution containing a nickel ammine complex, the method including adding seed crystals to a solution containing a nickel ammine complex and subjecting the resulting mixture to hydrogen reduction under high temperatures and high pressures to produce nickel powder, which makes it possible to maintain the quality of the nickel powder produced and reduce the amount of the seed crystals used. The method for producing nickel powder is characterized by adding seed crystals and a dispersant having an anionic functional group to the solution containing a nickel ammine complex to form a mixture slurry, and subjecting the mixture slurry to pressurized hydrogen reduction treatment by blowing hydrogen into the mixture slurry in a high temperature and high pressure atmosphere to cause a reduction reaction, thereby reducing the nickel ammine complex in the mixture slurry to obtain nickel powder.

Production method for seed crystal used in production of hydrogen-reduced nickel powder

Provided are: a production method for a nickel seed crystal that, by the optimization of the amount of hydrazine added when using to hydrazine to manufacture a seed-crystal fine nickel powder, reduces production costs and the environmental burden of nickel powder production, and maintains and improves the quality of the nickel powder at a low cost; and a production method for nickel powder using the nickel seed crystals. The production method for a seed crystal used in the production of hydrogen-reduced nickel powder is characterized in that the seed crystal is generated by 1-1.25 mol. inclusive of hydrazine being added to an acidic solution, which contains nickel ions and has a temperature maintained at 50-60℃ inclusive, per 1 mol. of a nickel component contained in the acidic solution.

Production method for seed crystal used in production of hydrogen-reduced nickel powder

Pyridazinyl thiazolecarboxamide compound

Se proporciona un compuesto útil como principio activo de una composición farmacéutica para el tratamiento del cáncer relacionado con la activación de células inmunitarias o el cáncer que ofrece resistencia a un tratamiento con anticuerpos anti-PD-1/anticuerpos anti-PD-L1. Los inventores de la presente han realizado estudios sobre un compuesto útil como principio activo de una composición farmacéutica para el tratamiento del cáncer relacionado con la activación de células inmunitarias o del cáncer que ofrece resistencia a un tratamiento con anticuerpos anti-PD-1/anticuerpos anti-PD-L1 y descubrieron que un compuesto de piridazinil-tiazolcarboxamida tiene efecto inhibitorio sobre DGK x (DGKzeta), lo que da lugar a la consecución de la presente invención. El compuesto de piridazinil-tiazolcarboxamida de la presente invención tiene efecto inhibitorio sobre DGK x y puede usarse como agente terapéutico para el tratamiento del cáncer relacionado con la activación de células inmunitarias o del cáncer que ofrece resistencia a un tratamiento con anticuerpos anti-PD-1/anticuerpos anti-PD-L1.

Digital-analog converter

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Code detecting circuit

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for producing cobalt powder

SUMIKO-380 (Original) Abstract Provided is a method for producing cobalt powder with high reaction efficiency by controlling the amount of added seed crystals when cobalt powder is produced from a solution containing a cobalt ammine sulfate complex. The method sequentially includes: a mixing step of adding, to the solution containing a cobalt ammine sulfate complex, cobalt powder as seed crystals in an amount of 1.5 times or more and 3.0 times or less the amount of cobalt contained in the solution and then adding a dispersant in an amount of 1.5% by weight to 3.0% by weight of the added seed crystals to form a mixture slurry; and a reduction and precipitation step of charging a reaction vessel with the mixture slurry and then blowing hydrogen gas into the mixture slurry to reduce cobalt complex ions contained in the mixture slurry to form cobalt precipitate on the surface of the seed crystals. (149 words)

Method of forming the wiring of a semiconductor circuit

Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using

A polishing apparatus includes a holder for holding a polished body with a polished surface thereof facing upwardly, and a polishing head for holding a polishing pad having a polishing surface having an area smaller than an area of the polished surface while contacting the polishing pad with the polished surface and for rotating the polishing pad around its rotation axis. The polishing head is provided with a driver for revolving the polishing pad around a revolution axis, and the revolution axis and the rotation axis are positioned so that a distance between the revolution axis and the rotation axis becomes smaller than a radius of the polishing pad.

Method for producing lithium adsorbent precursor

Provided is a method for producing lithium manganate as a lithium adsorbent precursor at atmospheric pressure. The method for producing a lithium adsorbent precursor comprises the following steps (1) to (3): (1) a first mixing step: a step of obtaining a first slurry containing manganese hydroxide by mixing a manganese salt with an alkali hydroxide; (2) a second mixing step: a step of obtaining a second slurry by adding lithium hydroxide to the first slurry and mixing; and (3) an oxidation step: a step of obtaining a lithium adsorbent precursor by adding an oxidizing agent to the second slurry. The method for producing a lithium adsorbent precursor comprises these steps to enable production of a lithium adsorbent precursor at atmospheric pressure. This enables the production of a lithium adsorbent precursor while restraining costs.

Indan-1,3-dione derivatives and herbicidal compositions containing them as an active ingredient.

Process for continuous recovery of dicyanobenzenes

PRODUCTION PROCESS OF A DEPOSITED MOVIE AND PRODUCTION OF A SEMICONDUCTOR DEVICE

Non-volatile semiconductor memory device

A plurality of NAND cells are arranged in a cell array. In each of the NAND cells, a pair of selection gate transistors is connected in series to a plurality of memory cell transistors. An inter-gate connection trench is formed in an insulating film between layers of stacked gates of the selection gate transistors. The stacked gates are electrically connected to each other. At an end part of the cell array in the row direction, an STI area is formed, and dummy NAND cells are formed at an end part in the row direction. A dummy selection gate transistor is connected in series to a plurality of dummy memory cell transistors. No inter-gate connection trench is present in an insulating film between layers of stacked gates of the dummy selection gate transistor, and the stacked gates of the dummy selection gate transistor are not electrically connected to each other.

Manufacturing method for nickel powder

　Provided is a manufacturing method by which, using industrially inexpensive hydrogen gas, coarse grains of a high-purity nickel powder can be produced from a nickel ammine sulfate complex solution, employing a fine nickel powder. This manufacturing method for forming a nickel powder from a nickel ammine sulfate complex solution is characterized in that the process steps indicated by (1) to (4) are carried out: (1) a seed crystal production step for mixing a nickel sulfate solution and hydrazine, and producing a nickel powder having an average particle diameter of 0.1-5 μm to serve as seed crystals; (2) a seed crystal addition step for adding the nickel powder obtained in (1) to a nickel ammine sulfate complex solution, and forming a mixed slurry; (3) a reduction step for blowing hydrogen gas into the mixed slurry obtained in the seed crystal addition step, and forming a reduced slurry that includes a nickel powder in which the nickel component in the mixed slurry has precipitated onto the seed crystals; and (4) a growth step for subjecting the reduced slurry obtained in the reduction step to solid-liquid separation to separate the nickel powder as the solid phase component, and, after recovery thereof, blowing hydrogen gas into a solution of a nickel ammine sulfate complex solution added to the nickel powder, and growing the nickel powder, to form a high-purity nickel powder.

METHOD, ARRANGEMENT AND RECORDING MEDIUM FOR COMMAND ENTRY

Recording device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for depositing a metal film containing aluminium by use of alkylaluminium halide

This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7 x 10⁻³ Torr to 9 x 10⁻² Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450°C or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

Method for producing seed crystals used for producing hydrogen-reduced nickel powder

Provided are: a production method for a nickel seed crystal that, by the optimization of the amount of hydrazine added when using to hydrazine to manufacture a seed-crystal fine nickel powder, reduces production costs and the environmental burden of nickel powder production, and maintains and improves the quality of the nickel powder at a low cost; and a production method for nickel powder using the nickel seed crystals. The production method for a seed crystal used in the production of hydrogen-reduced nickel powder is characterized in that the seed crystal is generated by 1-1.25 mol. inclusive of hydrazine being added to an acidic solution, which contains nickel ions and has a temperature maintained at 50-60? inclusive, per 1 mol. of a nickel component contained in the acidic solution.

Toilet seat paper sheet and case for easily setting toilet seat cover

(57)【要約】 （修正有） 【課題】便座紙カバーをケースごと、あらかじめ便座ブ タの場所に備え付けたケースに立ててセットしてあるの で、便座へかぶせるのが簡単でずれにくく時間も短縮で きる。 【解決手段】紙の中央部を便座の内側より少し小さめの 楕円形に切り抜いた便座用紙カバーで、その長方形の短 い辺の一辺を２〜３センチメートル幅程度折り曲げると ともに、相対するもう一辺に小さな穴を辺の端にそって 並べてあけた便座用紙カバーで、それを何枚も重ねた状 態にする。上記の紙カバーを収める長方形の紙ケースは 短い方の一辺にそってケースの表面が約３センチメート ル程度の幅で取り除けるようにミシン目がついている。 又、相対する辺の両端から１センチメートル程度内側 に、ちょうど収納した紙カバーの小さな穴あき部分を突 き通すように幅１センチメートル程度、厚さ０．５ミリ メートル程度のボール紙を取り付ける。

Tetrahydrophthalimide compound and herbicide containing said compound as active component

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Slurry processing equipment and slurry discharge method

【課題】、固体粒子の沈降を抑制しながら、そのスラリーを効率的に且つ効果的に容器から排出することができる方法を提供することを目的とする。 【解決手段】本発明に係るスラリーの排出方法は、液体と固体粒子とを含むスラリーを収容し処理するための処理装置１からスラリー１０を抜き出すスラリーの排出方法であって、処理装置１において、スラリー１０を撹拌するための撹拌羽根１１Ａと、撹拌羽根１１Ａにより撹拌されたスラリー１０の流れ方向の下流側に、そのスラリー１０を衝突させる遮蔽部材１２とを設け、スラリー１０を、撹拌羽根１１Ａにより撹拌することによって固体粒子を液体中に分散させるとともに、遮蔽部材１２に衝突させることによって乱流を生じさせ、その遮蔽部材１２の周囲に設けた出口配管１３からスラリー１０を抜き出す。 【選択図】図１