Optical module and method for manufacturing optical module

The present invention provides an optical module and a method for manufacturing the optical module, in which a V-shaped or trapezoidal groove having a first slope and a second slope facing to the first slope is formed at the surface of a silicon substrate by anisotropic etching, an adhesive is applied to a portion of at least the second slope in a region except the first slope of the groove, and lens is fixedly put in the groove.

Optical module and method for manufacturing optical module

The present invention provides an optical module and a method for manufacturing the optical module, in which a V-shaped or trapezoidal groove having a first slope and a second slope facing to the first slope is formed at the surface of a silicon substrate by anisotropic etching, an adhesive is applied to a portion of at least the second slope in a region except the first slope of the groove, and lens is fixedly put in the groove.

Photoelectric conversion module

A photoelectric conversion module includes: a substrate having a light transmitting property and having a mounting surface; a photoelectric conversion element mounted on the mounting surface of the substrate; a cover member fixed to the substrate via a solder layer constituted by solder and forming, cooperatively with the substrate, an airtight chamber housing the photoelectric conversion element; and a solder adsorbing film provided near an area fixed to the substrate by the solder layer, in a surface, of the cover member, facing the mounting surface, the solder having an adhesive property to the solder adsorbing film.

Functional device

The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.

Insulated wire, coil and method for manufacturing the coil

An insulated wire includes a conductor including a copper material, and an insulation layer that is formed on an outer periphery of the conductor. A restoring temperature TB of the conductor is not more than 130° C. The restoring temperature TB is a temperature that is needed to restore a conductivity of the conductor after a coil processing to a conductivity of the conductor before the coil processing.

ALUMINUM ALLOY WIRE ROD AND PRODUCING METHOD THEREOF

An aluminum alloy wire rod has a chemical composition consisting of 0.1 to 1.0 mass % of Co, 0.2 to 0.5 mass % of Zr, 0.02 to 0.09 mass % of Fe, 0.02 to 0.09 mass % of Si, 0 to 0.2 mass % of Mg, 0 to 0.10 mass % of Ti, 0 to 0.03 mass % of B, 0 to 1.00 mass % of Cu, 0 to 0.50 mass % of Ag, 0 to 0.50 mass % of Au, 0 to 1.00 mass % of Mn, 0 to 1.00 mass % of Cr, 0 to 0.50 mass % of Hf, 0 to 0.50 mass % of V, 0 to 0.50 mass % of Sc, 0 to 0.50 mass % of Ni, the balance being Al and inevitable impurities, and a metal structure including Al crystal grains, an Al—Co—Fe compound and an Al-Zr compound. The Al crystal grains having a crystal grain diameter of 10 μm or less have an area ratio of 90% or more. The wire rod has a tensile strength of 150 MPa or more, an electrical conductivity of 55% IACS or more and when heated at 200 deg C. for 10 years, a strength of 90% or more of its initial state strength. 1. A wire rod made of an aluminum alloy , the aluminum alloy having a chemical composition consisting of 0.1 to 1.0 mass % of Co , 0.2 to 0.5 mass % of Zr , 0.02 to 0.09 mass % of Fe , 0.02 to 0.09 mass % of Si , 0 to 0.2 mass % of Mg , 0 to 0.10 mass % of Ti , 0 to 0.03 mass % of B , 0 to 1.00 mass % of Cu , 0 to 0.50 mass % of Ag , 0 to 0.50 mass % of Au , 0 to 1.00 mass % of Mn , 0 to 1.00 mass % of Cr , 0 to 0.50 mass % of Hf , 0 to 0.50 mass % of V , 0 to 0.50 mass % of Sc , 0 to 0.50 mass % of Ni , the balance being Al and inevitable impurities ,wherein the aluminum alloy has a metal structure including Al crystal grains, an Al—Co—Fe compound and an Al—Zr compound, andwherein an area ratio of a region occupied by the Al crystal grains having a crystal grain diameter of 10 μm or less is 90% or more.2. The aluminum alloy wire rod according to claim 1 , wherein in a cross section perpendicular to a longitudinal direction claim 1 , the number of the Al—Zr compounds per unit area is 500/100 μmor more.3. The aluminum alloy wire rod according to claim 1 , wherein in a cross ...

Mechanical quantity measuring device and sensor unit

A mechanical quantity measuring device includes: a sensor chip having a strain detector formed on a surface of a semiconductor substrate and a plurality of electrodes connected to the strain detector; a stem having ascot that protrudes from an adjacent peripheral portion and has an upper surface that is attached to a lower surface of the sensor chip by a bonding material formed from a metallic material or a glass material; a lead-out wiring part including a plurality of wires that are electrically connected to the plurality of electrodes; and a fixing part for fixing the stem, wherein: the stem and the fixing part are integrally molded or fixed through metallic bonding or mechanical bonding.

Submount for optical device and its manufacturing method

Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

Bonding structure and method for manufacturing same

A bonding structure that a bonding region can endure a high temperature environment and the bonding can be maintained with high reliability is provided as a bonding material capable of maintaining reliable bonding in high temperature environment in place of solder including Pb. In the bonding structure for a first member and a second member, solder and glass are used to bond the first member and the second member together and the glass seals the solder. Thereby, electrical conductivity is ensured and the outflow of melting solder in high temperatures can be inhibited to improve the durability.

SUBMOUNT AND ITS MANUFACTURING METHOD

Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

LED light source, its manufacturing method, and LED-based photolithography apparatus and method

This invention provides a structurally-simple LED light source that is capable of preventing temperature variations among its multiple LED elements arranged densely on its LED-mounting substrate and also improving the heat release capabilities of the substrate by comprising an LED light source with: a plurality of LED elements each of which is formed by connecting an LED chip to electrodes formed on a ceramic substrate; an LED-mounting substrate on which to mount the plurality of LED elements, the LED-mounting substrate having through holes therein; and a heat sink plate for releasing heat from the LED-mounting substrate, wherein a thermally conductive resin is present between the LED-mounting substrate and the heat sink plate and wherein part of the thermally conductive resin protrudes from the through holes of the LED-mounting substrate and covers the top surface of the LED-mounting substrate on which the plurality of LED elements are mounted, so that the part of the thermally conductive ...

Anodic bonding method and electronic device having anodic bonding structure

In anodic bonding between a conductor or semiconductor and glass, in order to attain good adhesion at a lower bonding temperature than usual and improve the toughness at its boundary to obtain higher reliability for a bonded portion even in a case where bonded members are warped or dust is present at the bonding boundary, a soft metal film is formed on the surface of a conductor or semiconductor on which an active metal film having high reactivity with oxygen is formed, whereby a warp or dust, if any, can be absorbed by the deformation of the soft metal film, thereby to improve the adhesion at the boundary. Adhesion at the bonding boundary is improved even at a low bonding temperature of, e.g., about 200° C. Further, the toughness at the bonding boundary can be improved to increase reliability by roughening the bonded surface on the side of the glass.

Functional device package with metallization arrangement for improved bondability of two substrates

A packaging structure for hermetically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.

Lead component and method for manufacturing the same, and semiconductor package

To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

Functional Device Package

A packaging structure for hermitically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.

Optical Module

An optical module in a simple configuration is provided which can suppress optical crosstalk due to leakage light without causing characteristics deterioration and reliability decrease of light-emitting elements to thereby obtain appropriate light receiving sensitivity. In an optical module in which a plurality of light-emitting elements 11 and light-receiving elements 12 are mounted on an optical-element mounting substrate 1, a light-absorbing resin 6 to absorb light with a light-emission wavelength of the light-emitting elements 11 is arranged to cover side surfaces of the light-emitting elements 11 and a non-adhesive layer 7 including a material not adhesive to the light-absorbing resin 6 is arranged between the light-absorbing resin 6 and the optical-element mounting substrate 1.

Anodic bonding method and electronic device having anodic bonding structure

In anodic bonding between a conductor or semiconductor and glass, in order to attain good adhesion at a lower bonding temperature than usual and improve the toughness at its boundary to obtain higher reliability for a bonded portion even in a case where bonded members are warped or dust is present at the bonding boundary, a soft metal film is formed on the surface of a conductor or semiconductor on which an active metal film having high reactivity with oxygen is formed, whereby a warp or dust, if any, can be absorbed by the deformation of the soft metal film, thereby to improve the adhesion at the boundary. Adhesion at the bonding boundary is improved even at a low bonding temperature of, e.g., about 200° C. Further, the toughness at the bonding boundary can be improved to increase reliability by roughening the bonded surface on the side of the glass.

PHOTOELECTRIC CONVERSION MODULE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION MODULE

A photoelectric conversion module includes: a substrate having a light transmitting property and having a mounting surface; a photoelectric conversion element mounted on the mounting surface of the substrate; a cover member fixed to the substrate via a solder layer constituted by solder and forming, cooperatively with the substrate, an airtight chamber housing the photoelectric conversion element; and a solder adsorbing film provided near an area fixed to the substrate by the solder layer, in a surface, of the cover member, facing the mounting surface, the solder having an adhesive property to the solder adsorbing film. 1. A photoelectric conversion module comprising:a substrate having a light transmitting property and having a mounting surface;a photoelectric conversion element mounted on the mounting surface of said substrate;a cover member fixed to said substrate via a solder layer constituted by solder and forming, cooperatively with said substrate, an airtight chamber housing said photoelectric conversion element; anda solder adsorbing film provided near an area fixed to said substrate by the solder layer, in a surface, of said cover member, facing the mounting surface, the solder having an adhesive property to said solder adsorbing film.2. The photoelectric conversion module according to claim 1 , wherein:said cover member has a depression forming the airtight chamber in the surface facing the mounting surface;an area near an opening of a wall surface of the depression is inclined relative to the mounting surface; andsaid solder adsorbing film is provided at least on the area near the opening of the wall surface of the depression.3. The photoelectric conversion module according to claim 2 , further comprising:a conductor pattern formed on the mounting surface and having conductivity; andan insulating layer provided between said conductor pattern and the solder layer and having an insulating property.4. The photoelectric conversion module according to claim 3 , ...

Functional Device

The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.

Aluminum alloy wire rod and producing method therefor

A wire rod made of an aluminum alloy. The aluminum alloy includes Al crystal grains, an Al—Zr compound, and an Al—Co—Fe or Al—Ni—Fe compound. The aluminum alloy includes high-angle tilt crystal grain boundaries, each of which has a difference between crystal orientations in both its sides of 15 degrees or more, and low-angle tilt crystal grain boundaries, each of which has a difference between crystal orientations in both its sides of 2 degrees or more and less than 15 degrees. An average grain diameter of ones of the Al crystal grains surrounded by the high-angle boundaries is 12 μm or more. An average grain diameter of the ones of the Al crystal grains surrounded by the high-angle boundaries, ones of the Al crystal grains surrounded by the high-angle boundaries and the low-angle boundaries, and ones of the Al crystal grains surrounded by the low-angle boundaries, is 10 μm or less.

Junction material, manufacturing method thereof, and manufacturing method of junction structure

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer ( 101 ), Al-based metallic layers ( 102 a , 102 b ) on both sides thereof, and X-based metallic layers ( 103 a , 103 b ) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers ( 102 a , 102 b ), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

Equipment and method for manufacturing copper alloy material

A copper alloy material manufacturing equipment for manufacturing a copper alloy material by continuously casting molten copper. The equipment includes an element adding means for adding a metal element to the molten copper, a tundish for holding the molten copper containing the metal element, a pouring nozzle connected to the tundish to feed the molten copper from the tundish, and a trapping member arranged inside the tundish and including a same type of material as at least one of an oxide of the metal element, a nitride of the metal element, a carbide of the metal element and a sulfide of the metal element.

METHOD OF MANUFACTURING WIRE ROD AND APPARATUS OF MANUFACTURING WIRE ROD

A manufacturing efficiency of the wire rod made of the cast alloy including the additive element having the high activity to the oxygen is improved. An apparatus of manufacturing a wire rod includes: a tundish storing a molten metal; a mold for use in continuously casting the molten metal fed from the tundish; and an additive-element feeding unit continuously feeding an additive element (wire) to a feeding port of the mold.

Substrate for mounting electronic part and electronic part

The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

LED LIGHT SOURCE, ITS MANUFACTURING METHOD, AND LED-BASED PHOTOLITHOGRAPHY APPARATUS AND METHOD

This invention provides a structurally-simple LED light source that is capable of preventing temperature variations among its multiple LED elements arranged densely on its LED-mounting substrate and also improving the heat release capabilities of the substrate by comprising an LED light source with: a plurality of LED elements each of which is formed by connecting an LED chip to electrodes formed on a ceramic substrate; an LED-mounting substrate on which to mount the plurality of LED elements, the LED-mounting substrate having through holes therein; and a heat sink plate for releasing heat from the LED-mounting substrate, wherein a thermally conductive resin is present between the LED-mounting substrate and the heat sink plate and wherein part of the thermally conductive resin protrudes from the through holes of the LED-mounting substrate and covers the top surface of the LED-mounting substrate on which the plurality of LED elements are mounted, so that the part of the thermally conductive ...

Optical module

An optical module in a simple configuration is provided which can suppress optical crosstalk due to leakage light without causing characteristics deterioration and reliability decrease of light-emitting elements to thereby obtain appropriate light receiving sensitivity. In an optical module in which a plurality of light-emitting elements 11 and light-receiving elements 12 are mounted on an optical-element mounting substrate 1, a light-absorbing resin 6 to absorb light with a light-emission wavelength of the light-emitting elements 11 is arranged to cover side surfaces of the light-emitting elements 11 and a non-adhesive layer 7 including a material not adhesive to the light-absorbing resin 6 is arranged between the light-absorbing resin 6 and the optical-element mounting substrate 1.

JUNCTION MATERIAL, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF JUNCTION STRUCTURE

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (), Al-based metallic layers () on both sides thereof, and X-based metallic layers () (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction. 1. A junction material formed by laminating a first Al-base layer formed of a metal with a main component of Al and a first X-base layer in this order on a first main surface of a Zn-base layer formed of a metal with a main component of Zn , wherein the X-base layer is formed of a metal with a main component selected from Cu , Au , Ag and Sn.2. The junction material according to claim 1 ,wherein a second Al-base layer formed of a metal with a main component of Al and a second X-base layer are laminated in this order on a second main surface opposite the first main surface of the Zn-base layer; andthe second X-base layer is formed of a metal with a main component selected from Cu, Au, Ag and Sn.3. The junction material according to claim 1 , wherein the second main surface opposite the first main surface of the Zn-base layer is connected to a substrate.4. The junction material according to claim 1 , wherein the Zn-base layer is formed of one of a single body layer and an alloy layer with a main component of Zn by 90 to 100 wt. %.5. The junction material according to claim 1 , wherein ...

Optical module mounted with WDM filter

A filter element includes a first glass substrate having a pair of parallel surfaces and a band pass filter arranged on one of the parallel surfaces, a pair of single-crystal substrates (Si wafers) each including a primary surface formed with a depression having an inclined surface with respect to the primary surface occupying at least one half of the opening of the depression, and a second glass substrate having an optical element. The primary surfaces of the single-crystal substrate pair are bonded to a pair of the surfaces of the glass substrate. The depressions are faced through the glass substrate and surround the band pass filter. By this configuration, the filter element can be mass produced with a high accuracy and a low cost by the wafer-level process.

Aluminum alloy wire rod and producing method thereof

An aluminum alloy wire rod has a chemical composition consisting of 0.1 to 1.0 mass % of Co, 0.2 to 0.5 mass % of Zr, 0.02 to 0.09 mass % of Fe, 0.02 to 0.09 mass % of Si, 0 to 0.2 mass % of Mg, 0 to 0.10 mass % of Ti, 0 to 0.03 mass % of B, 0 to 1.00 mass % of Cu, 0 to 0.50 mass % of Ag, 0 to 0.50 mass % of Au, 0 to 1.00 mass % of Mn, 0 to 1.00 mass % of Cr, 0 to 0.50 mass % of Hf, 0 to 0.50 mass % of V, 0 to 0.50 mass % of Sc, 0 to 0.50 mass % of Ni, the balance being Al and inevitable impurities, and a metal structure including Al crystal grains, an Al—Co—Fe compound and an Al—Zr compound. The Al crystal grains having a crystal grain diameter of 10 μm or less have an area ratio of 90% or more. The wire rod has a tensile strength of 150 MPa or more, an electrical conductivity of 55% IACS or more and when heated at 200 deg C. for 10 years, a strength of 90% or more of its initial state strength.

EQUIPMENT AND METHOD FOR MANUFACTURING COPPER ALLOY MATERIAL

A copper alloy material manufacturing equipment for manufacturing a copper alloy material by continuously casting molten copper. The equipment includes an element adding means for adding a metal element to the molten copper, a tundish for holding the molten copper containing the metal element, a pouring nozzle connected to the tundish to feed the molten copper from the tundish, and a trapping member arranged inside the tundish and including a same type of material as at least one of an oxide of the metal element, a nitride of the metal element, a carbide of the metal element and a sulfide of the metal element.

Method of manufacturing wire rod and apparatus of manufacturing wire rod

A manufacturing efficiency of the wire rod made of the cast alloy including the additive element having the high activity to the oxygen is improved. An apparatus of manufacturing a wire rod includes: a tundish storing a molten metal; a mold for use in continuously casting the molten metal fed from the tundish; and an additive-element feeding unit continuously feeding an additive element (wire) to a feeding port of the mold.

Copper alloy wire, cable, and method of manufacturing copper alloy wire

Bendability of a copper alloy wire is improved without decrease in an electrical conductivity of the copper alloy wire made of copper alloy containing zirconium. A cable includes: a two-core stranded wire formed by intertwining two electrical wires made of a conductor and an insulating layer covering the conductor; a filler formed around the two-core stranded wire; and a sheath formed around the filler and the electrical wire. The conductor is a copper alloy wire in which a precipitate containing the zirconium disperses, and has a crystal gain diameter that is equal to or smaller than 1 μm, an electrical conductivity that is equal to or higher than 87% IACS, and a tensile stress that is equal to or larger than 545 MPa.

Copper alloy material and production method therefor

A copper alloy material production method is provided. A copper raw material including not higher than 30 ppm by mass of oxygen is melted to form a molten copper. Not lower than 4 ppm by mass and not higher than 55 ppm by mass of titanium is added to the molten copper. After the adding of the titanium, not lower than 100 ppm by mass and not higher than 7000 ppm by mass of magnesium is added.

Optical module which permits stable laser output

An optical module for use in detecting a plurality of different wavelengths by making use of the multiple wavelength selectivity of an etalon. The optical module includes a semiconductor laser, a lens for converting a beam emitted from the semiconductor laser into a substantially parallel beam, a beam splitter for splitting the converted beam into a reflected beam and a transmitted beam, and a light-receiving element disposed such that one of the split beams is incident thereupon through an etalon, wherein a center of the reflected beam from the etalon occurring as the beam is incident upon the etalon is arranged to return to a region other than a beam-emitting portion of the semiconductor laser.

Optical transceiver module

There are provided a downsized and low-cost optical module used as a terminal for wavelength multiplexing optical transmission and one-core bidirectional optical transmission which transmits lights of plural wavelengths through one optical fiber, and a method of manufacturing the optical module. A base on which plural optical elements are mounted, and an optical multiplexer and demultiplexer having wavelength selection filters and mirrors formed on both surfaces of a substrate are prepared. Those two parts are packed into a package so that an optical element mounted surface and a filter surface are substantially parallel to each other, and the optical elements are arranged to emit or receive lights obliquely to the base. With this configuration, because the optical multiplexer and demultiplexer can be mounted in parallel to an X-Y plane, a package can be easily machined by using a lathe, thereby enabling a reduction in the costs.

Aluminum alloy conductor, insulated wire including the conductor, and method for manufacturing the insulated wire

It is an objective of the invention to provide an Al alloy conductor exhibiting mechanical properties and heat resistance that are balanced at a higher level than conventional Al alloy conductors while having an electrical conductivity comparable to that of any conventional Al-based material. There is provided an Al alloy conductor formed of an Al alloy. The Al alloy has a chemical composition including Co of 0.1 mass % or more and 1 mass % or less, at least one of Sc of 0.1 mass % or more and 0.5 mass % or less and Zr of 0.2 mass % or more and 0.5 mass % or less, and the balance made up of Al and inevitable impurities. The Al alloy conductor has a matrix containing fine particles of a compound of at least one of the Sc and the Zr with the Al. The fine particles are dispersedly precipitated in the matrix.

Substrate for mounting electronic part and electronic part

The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

BONDING STRUCTURE AND METHOD FOR MANUFACTURING SAME

A bonding structure that a bonding region can endure a high temperature environment and the bonding can be maintained with high reliability is provided as a bonding material capable of maintaining reliable bonding in high temperature environment in place of solder including Pb. In the bonding structure for a first member and a second member, solder and glass are used to bond the first member and the second member together and the glass seals the solder. Thereby, electrical conductivity is ensured and the outflow of melting solder in high temperatures can be inhibited to improve the durability.

ALUMINUM ALLOY WIRE ROD AND PRODUCING METHOD THEREFOR

A wire rod made of an aluminum alloy. The aluminum alloy includes Al crystal grains, an Al—Zr compound, and an Al—Co—Fe or Al—Ni—Fe compound. The aluminum alloy includes high-angle tilt crystal grain boundaries, each of which has a difference between crystal orientations in both its sides of 15 degrees or more, and low-angle tilt crystal grain boundaries, each of which has a difference between crystal orientations in both its sides of 2 degrees or more and less than 15 degrees. An average grain diameter of ones of the Al crystal grains surrounded by the high-angle boundaries is 12 μm or more. An average grain diameter of the ones of the Al crystal grains surrounded by the high-angle boundaries, ones of the Al crystal grains surrounded by the high-angle boundaries and the low-angle boundaries, and ones of the Al crystal grains surrounded by the low-angle boundaries, is 10 μm or less.

Insulated electric wire, coil and producing method for same coil

An insulated electric wire is composed of a conductor composed of a copper material, and an electrical insulating layer provided on an outer periphery of the conductor. For the constituent conductor of the insulated electric wire, in an orientation intensity ratio obtained by X-ray diffraction of a transverse cross section of the conductor, an intensity in a [200] crystal orientation is higher than an intensity in a [111] crystal orientation.

Aluminum alloy wire material

Recrystallization of an aluminium alloy wire material is suppressed while a heat resistance of the same is improved. In a wire material made of an aluminium alloy, an aluminium alloy wire material is provided, the aluminium alloy containing Zr of 0.2 to 1.0 mass %, Co of 0.1 to 1.0 mass % and remainders that are aluminium and unavoidable impurities, and the aluminium alloy wire material having a tensile strength at a room temperature that is equal to or higher than 170 MPa, an elongation that is equal to or higher than 10%, and a stress at time of tensile deformation at a strain speed of 10−5/sec under a temperature condition of 250° C. that is equal to or higher than 40 MPa.

Substrate for mounting electronic part and electronic part

The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

OPTICAL MODULE

There is provided means of achieving the improvement of optical coupling efficiency between a surface receiving/emitting element and an optical transmission path with a simple structure and low cost. An optical element and a substrate having an optical waveguide layer and electric wiring are connected with each other through a lens having a Fresnel lens shape. A through via is provided in the lens, and the optical element and the electric wiring in the substrate are electrically connected with each other through the through via. Instead of the lens, a unit in which a lens is mounted inside an optical-element mounting substrate may be used.

Optical module

An optical module for use in detecting a plurality of different wavelengths by making use of the multiple wavelength selectivity of an etalon. The optical module includes a semiconductor laser, a lens for converting a beam emitted from the semiconductor laser into a substantially parallel beam, a beam splitter for splitting the converted beam into a reflected beam and a transmitted beam, and a light-receiving element disposed such that one of the split beams is incident thereupon through an etalon, wherein a center of the reflected beam from the etalon occurring as the beam is incident upon the etalon is arranged to return to a region other than a beam-emitting portion of the semiconductor laser.

APPARATUS AND METHOD FOR MANUFACTURING COPPER ALLOY MATERIAL

There is provide an apparatus for manufacturing a copper alloy metal material, including: a tundish in which molten copper is stored; a pouring nozzle through which the molten copper passes, the molten copper being flowed out from the tundish; a pressure variation device that varies a pressure applied to the pouring nozzle by the molten copper; and a controller that controls the pressure variation device so as to remove inclusions adhered to the pouring nozzle, by increasing the pressure applied to the pouring nozzle by the molten copper.

SUBSTRATE FOR MOUNTING ELECTRONIC PART AND ELECTRONIC PART

The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

COPPER ALLOY MATERIAL AND PRODUCTION METHOD THEREFOR

A copper alloy material production method is provided. A copper raw material including not higher than 30 ppm by mass of oxygen is melted to form a molten copper. Not lower than 4 ppm by mass and not higher than 55 ppm by mass of titanium is added to the molten copper. After the adding of the titanium, not lower than 100 ppm by mass and not higher than 7000 ppm by mass of magnesium is added. 1. A copper alloy material production method , comprising:melting a copper raw material including not higher than 30 ppm by mass of oxygen to form a molten copper;adding not lower than 4 ppm by mass and not higher than 55 ppm by mass of titanium to the molten copper; andafter the adding of the titanium, adding not lower than 100 ppm by mass and not higher than 7000 ppm by mass of magnesium.2. The copper alloy material production method according to claim 1 , wherein in the adding of the titanium claim 1 , the titanium not less than the content of the oxygen included in the molten copper is added.3. The copper alloy material production method according to claim 1 , wherein in the adding of the titanium claim 1 , the titanium is added in such a manner that a ratio of the titanium to the oxygen included in the molten copper is 1:1 to 8:1.5. The copper alloy material production method according to claim 1 , further comprising:before the adding of the magnesium, removing an oxide of the titanium formed in the adding of the titanium.6. The copper alloy material production method according to claim 5 , wherein in the removing of the oxide claim 5 , an inert gas is bubbled into the molten copper.7. A copper alloy material claim 5 , consisting of:not higher than 30 ppm by mass of oxygen;not lower than 4 ppm by mass and not higher than 55 ppm by mass of titanium;not lower than 100 ppm by mass and not higher than 7000 ppm by mass of magnesium; andthe balance consisting of copper and inevitable impurities,wherein a titanium oxide is dispersed in a copper parent phase, while the magnesium ...

Thermoelectric Device Assembly, Thermoelectric Module and its Manufacturing Method

In a structure for joining thermoelectric devices and electrodes in a thermoelectric module, the thermoelectric module is configured such that multiple P-type thermoelectric devices and multiple N-type thermoelectric devices are alternately disposed so as to be electrically connected in series via electrode members. A connected portion of the electrode member to the P-type thermoelectric device and a connected portion of the electrode member to the N-type thermoelectric device are made of different materials. This can suppress a considerable reduction in connection reliability between the thermoelectric devices and the electrodes even at a high temperature and efficiently transmit a peripheral temperature to the thermoelectric devices. 1. A thermoelectric device assembly comprising a P-type thermoelectric device and an N-type thermoelectric device that are electrically connected in series via an electrode member ,wherein the electrode member has a portion connected to the P-type thermoelectric device according to a coefficient of thermal expansion of the P-type thermoelectric device and a portion connected to the N-type thermoelectric device according to a coefficient of thermal expansion of the N-type thermoelectric device, and the connected portion of the electrode to the P-type thermoelectric device and the connected portion of the electrode to the N-type thermoelectric device are made of different materials.2. The thermoelectric device assembly according to claim 1 , wherein a difference in coefficient of thermal expansion between the connected portion of the electrode member to the P-type thermoelectric device and P-type thermoelectric device and a difference in coefficient of thermal expansion between the connected portion of the electrode member to the N-type thermoelectric device and the N-type thermoelectric device are absolute values not larger than 6×10K.3. The thermoelectric device assembly according to claim 1 , wherein the P-type thermoelectric device ...

Led light source, its manufacturing method, and led-based photolithography apparatus and method

Structurally-simple LED light source preventing temperature variations among multiple LED elements arranged densely on LED-mounting substrate is described. LED light source includes a plurality of LED elements each of which is formed by connecting an LED chip to electrodes formed on a ceramic substrate; LED-mounting substrate on which to mount the plurality of LED elements, the LED-mounting substrate having through holes therein; and heat sink plate for releasing heat from the LED-mounting substrate, wherein a thermally conductive resin is present between the LED-mounting substrate and the heat sink plate and wherein part of the thermally conductive resin protrudes from the through holes of the LED-mounting substrate and covers the top surface of the LED-mounting substrate on which the plurality of LED elements are mounted, so thermally conductive resin is in contact with the plurality of LED elements.

Copper Alloy Wire, Cable, and Method of Manufacturing Copper Alloy Wire

Bendability of a copper alloy wire is improved without decrease in an electrical conductivity of the copper alloy wire made of copper alloy containing zirconium. A cable includes: a two-core stranded wire formed by intertwining two electrical wires made of a conductor and an insulating layer covering the conductor; a filler formed around the two-core stranded wire; and a sheath formed around the filler and the electrical wire. The conductor is a copper alloy wire in which a precipitate containing the zirconium disperses, and has a crystal gain diameter that is equal to or smaller than 1 μm, an electrical conductivity that is equal to or higher than 87% IACS, and a tensile stress that is equal to or larger than 545 MPa.

Mechanical Quantity Measuring Device and Sensor Unit

A mechanical quantity measuring device includes: a sensor chip having a strain detector formed on a surface of a semiconductor substrate and a plurality of electrodes connected to the strain detector; a stem having ascot that protrudes from an adjacent peripheral portion and has an upper surface that is attached to a lower surface of the sensor chip by a bonding material formed from a metallic material or a glass material; a lead-out wiring part including a plurality of wires that are electrically connected to the plurality of electrodes; and a fixing part for fixing the stem, wherein: the stem and the fixing part are integrally molded or fixed through metallic bonding or mechanical bonding. 1. A mechanical quantity measuring device comprising:a sensor chip having a strain detector formed on a surface of a semiconductor substrate and a plurality of electrodes connected to the strain detector;a stem having a seat that protrudes from an adjacent peripheral portion and has an upper surface that is attached to a lower surface of the sensor chip by a bonding material formed from a metallic material or a glass material;a lead-out wiring part including a plurality of wires that are electrically connected to the plurality of electrodes; anda fixing part for fixing the stem, wherein:the stem and the fixing part are integrally molded or fixed through metallic bonding or mechanical bonding.2. The mechanical quantity measuring device according to claim 1 , wherein:the fixing part is an object to be measured that has a larger area than that of the stem and fixes the peripheral portion of the stem.3. The mechanical quantity measuring device according to claim 2 , wherein:a region in the stem where the seat is formed has higher rigidity than rigidity of the peripheral portion.4. The mechanical quantity measuring device according to claim 1 , wherein:a groove that is narrower than the seat and protrudes beyond an outer circumference of the seat is formed in a surface of the stem ...

Insulated wire, coil and method for manufacturing the coil

An insulated wire includes a conductor including a copper material, and an insulation layer that is formed on an outer periphery of the conductor. A restoring temperature T B of the conductor is not more than 130° C. The restoring temperature T B is a temperature that is needed to restore a conductivity of the conductor after a coil processing to a conductivity of the conductor before the coil processing.

Insulated electric wire, coil and producing method for same coil

An insulated electric wire is composed of a conductor composed of a copper material, and an electrical insulating layer provided on an outer periphery of the conductor. For the constituent conductor of the insulated electric wire, in an orientation intensity ratio obtained by X-ray diffraction of a transverse cross section of the conductor, an intensity in a [200] crystal orientation is higher than an intensity in a [111] crystal orientation.

Optical module mounted with wdm filter

A filter element includes a first glass substrate having a pair of parallel surfaces and a band pass filter arranged on one of the parallel surfaces, a pair of single-crystal substrates (Si wafers) each including a primary surface formed with a depression having an inclined surface with respect to the primary surface occupying at least one half of the opening of the depression, and a second glass substrate having an optical element. The primary surfaces of the single-crystal substrate pair are bonded to a pair of the surfaces of the glass substrate. The depressions are faced through the glass substrate and surround the band pass filter. By this configuration, the filter element can be mass produced with a high accuracy and a low cost by the wafer-level process.

Hollow sealed element, and its manufacturing method

【課題】気密封止性の高い中空封止素子およびその製造方法を提供する。 【解決手段】機械的可動部を有する機能部20、機能部20と接続された内部電極30、機能部20と内部電極30を取り囲む封止部40を絶縁性基体10上に形成し、機能部20、内部電極30、封止部40の上にカバー基体50を載置して、機能部20とカバー基体50の間に空隙部70を形成する中空封止素子において、内部電極30とカバー基体50の接合界面ならびに封止部40とカバー基体50の接合界面をともに陽極接合80したことを特徴とする。 【選択図】図６

Aluminum alloy wire material

【課題】アルミニウム合金線材の再結晶を抑制して、耐熱性を向上させる。【解決手段】アルミニウム合金からなる線材であって、アルミニウム合金は、０．２～１．０質量％のＺｒと、０．１～１．０質量％のＣｏとを含有し、残部がアルミニウムおよび不可避不純物からなり、室温における引張強度が１７０ＭＰａ以上であり、伸びが１０％以上であり、２５０℃の温度条件でひずみ速度１０－５／ｓｅｃで引張変形する際の応力が４０ＭＰａ以上である、アルミニウム合金線材を提供する。【選択図】なし

Led light source, its manufacturing method, and led-based photolithography device and method

Junction material, manufacturing method thereof, and manufacturing method of junction structure

Copper alloy material and method for producing the same

【課題】機械的強度および導電率に優れ、かつ圧延加工により割れにくい銅合金材を提供する。 【解決手段】３０ｍａｓｓ ｐｐｍ以下の酸素を含む銅原料を溶融して銅溶湯を形成する溶融工程と、銅溶湯に４ｍａｓｓ ｐｐｍ以上５５ｍａｓｓ ｐｐｍ以下のＴｉを添加するＴｉ添加工程と、Ｔｉ添加工程の後に１００ｍａｓｓ ｐｐｍ以上７０００ｍａｓｓ ｐｐｍ以下のＭｇを添加するＭｇ添加工程と、を有する、銅合金材の製造方法である。 【選択図】図１

半導体素子接続ユニットおよびそれを備えた力学量測定装置

【課題】高温環境下においても検出精度を確保することができる半導体素子接続ユニット及び力学量測定装置を提供する。 【解決手段】Siを含んだ半導体素子のデバイス層と該半導体素子を構造体に接着するAuを含んだはんだ層との間に、該はんだのぬれ上がりを防止する層を有する。これにより所定量だけAuとSiの共晶反応させて硬度を高めつつ、デバイス層へのAuの浸食を防止する。 【選択図】図２

アルミニウム合金線材およびその製造方法

【課題】強度、伸び、導電率および耐熱性を高い水準でバランスよく有するアルミニウム合金線材を提供する。【解決手段】アルミニウム合金からなる線材であって、アルミニウム合金は、Ｃｏ：０．１〜１．０質量％、Ｚｒ：０．２〜０．５質量％、Ｆｅ：０．０２〜０．０９質量％、Ｓｉ：０．０２〜０．０９質量％、Ｍｇ：０〜０．２質量％、Ｔｉ：０〜０．１０質量％、Ｂ：０〜０．０３質量％、Ｃｕ：０〜１．００質量％、Ａｇ：０〜０．５０質量％、Ａｕ：０〜０．５０質量％、Ｍｎ：０〜１．００質量％、Ｃｒ：０〜１．００質量％、Ｈｆ：０〜０．５０質量％、Ｖ：０〜０．５０質量％、Ｓｃ：０〜０．５０質量％、Ｎｉ：０〜０．５０質量％、残部：Ａｌおよび不可避不純物からなる化学組成を有し、かつ、Ａｌ結晶粒とＡｌ−Ｃｏ−Ｆｅ化合物およびＡｌ−Ｚｒ化合物とを含み、結晶粒径が１０μｍ以下のＡｌ結晶粒が占める領域が面積比で９０％以上である金属組織を有する、アルミニウム合金線材である。【選択図】図１

絶縁電線、コイル

【課題】絶縁電線をコイル状に加工したときに低下する導体の導電率を低温度で回復させる技術を提供する。【解決手段】銅材料から形成される導体と導体の外周に設けられる絶縁層と、を備え、導体がコイル状に加工されたときの導電率を加工前の導電率に回復させるための回復温度ＴＢが１３０℃以下である、絶縁電線である。【選択図】図１

銅合金線、シールド材、同軸ケーブル及び銅合金線の製造方法

【課題】電界によるノイズおよび磁界によるノイズの両方を遮蔽しつつ、遮蔽構造を小型化および軽量化することができる銅合金線、シールド材、同軸ケーブル及び銅合金線の製造方法を提供する。【解決手段】銅合金線は、１０質量％以上１６質量％以下の鉄と、２３質量％以上３０質量％以下のチタンと、を含み、残部が銅および不可避不純物からなり、チタンおよび鉄の総質量に対する鉄の質量比率は、３０％以上３５％以下である。【選択図】図２

寿命予測構造

【課題】回路基板に接続されている実装部品のはんだ接続部のクリープ破断寿命が来ることを、部品接続部よりも先に断線して電気的手法により予測する機構を基板に実装し、はんだの寿命を正確に予測する方法を提供する。 【解決手段】筺体内で非水平の回路基板を有し、該基板上に狭少間隙をもって形成した、断線検出回路１２に接続された２つのランド１１に金属子片２がはんだ付けされていることを特徴とした寿命予測構造。 【選択図】図１

アルミニウム合金線材およびその製造方法

【課題】強度、伸び、導電率および耐熱性を高い水準でバランスよく有するアルミニウム合金線材を提供する。【解決手段】アルミニウム合金からなる線材であって、アルミニウム合金は、Ｃｏ：０．１〜１．０質量％、Ｚｒ：０．２〜０．５質量％、Ｆｅ：０．０２〜０．０９質量％、Ｓｉ：０．０２〜０．０９質量％、Ｍｇ：０〜０．２質量％、Ｔｉ：０〜０．１０質量％、Ｂ：０〜０．０３質量％、Ｃｕ：０〜１．００質量％、Ａｇ：０〜０．５０質量％、Ａｕ：０〜０．５０質量％、Ｍｎ：０〜１．００質量％、Ｃｒ：０〜１．００質量％、Ｈｆ：０〜０．５０質量％、Ｖ：０〜０．５０質量％、Ｓｃ：０〜０．５０質量％、Ｎｉ：０〜０．５０質量％、残部：Ａｌおよび不可避不純物からなる化学組成を有し、かつ、Ａｌ結晶粒とＡｌ−Ｃｏ−Ｆｅ化合物およびＡｌ−Ｚｒ化合物とを含む金属組織を有し、引張強度が１５０ＭＰａ以上、導電率が５５％ＩＡＣＳ以上、２００℃で１０年間加熱させたときの強度が初期状態の強度の９０％以上である、アルミニウム合金線材が提供される。【選択図】図１

Isolierter Draht, Spule und Verfahren zur Herstellung der Spule

Ein isolierter Draht enthält einen Leiter, der ein Kupfermaterial enthält, und eine Isolierschicht, die auf einem Außenumfang des Leiters gebildet ist. Eine Wiederherstellungstemperatur T B des Leiters ist höchstens 130 °C. Die Wiederherstellungstemperatur T B ist eine Temperatur, die notwendig ist, um eine Leitfähigkeit des Leiters nach einer Spulenverarbeitung auf eine Leitfähigkeit des Leiters vor der Spulenverarbeitung wiederherzustellen.

合金元素添加材および銅合金材の製造方法

【課題】鋳造に用いられる溶銅中に所望の合金元素を添加するための合金元素添加材は、銅に比べて酸化し易いため、溶銅中において溶融せずに残る場合があり、このような残留を防ぐ必要がある。【解決手段】マグネシウム、アルミニウムまたはセリウムから成る金属線と、銅から成る金属材１１ａと、を備え、金属材１１ａは、金属線の長手方向における一方の先端部に接して固定されている、合金元素添加材８を提供する。【選択図】図３

サブマウントおよびその製造方法

複合材及びその製造方法

【課題】基材が硬くて伸びの小さい材料であっても、ひび・割れや引け巣などを発生させることなく、ヒートシンク材に好適な複合材を製造する。 【解決手段】複合材100を、CuからなるCu層101と、金属Mからなる軟質金属層102と、Cu層103と、Mo又はWからなる硬質金属層104と、Cu層105と、軟質金属層106と、Cu層107とを、この順に積層した構成とする。 【選択図】図１

サブマウントおよびその製造方法

【課題】放熱性に優れ、ウェハ状で一括して形成することのできる光素子搭載用サブマウントを提供する。 【解決手段】絶縁物を主体とした第一の基板の表面に、光素子搭載部と配線部からなる電極メタライズが形成され、第二の基板としてガラス基板に貫通穴が形成され、前記第一の基板の光素子搭載部が、前記第二の基板の貫通穴の内部に位置するように位置合わせされ、第一の基板と第二の基板を陽極接合などの方法を用いて接合する。 【選択図】図５

サブマウントおよびその製造方法

　放熱性に優れ、ウェハ状で一括して形成することのできる光素子搭載用サブマウントを提供する。 　絶縁物を主体とした第一の基板の表面に、光素子搭載部と配線部からなる電極メタライズが形成され、第二の基板としてガラス基板に貫通穴が形成され、前記第一の基板の光素子搭載部が、前記第二の基板の貫通穴の内部に位置するように位置合わせされ、第一の基板と第二の基板を陽極接合などの方法を用いて接合する。

接続材料付き半導体素子およびその製造方法

【課題】はんだ接続時の接続不良を低減し、パワー半導体素子を歩留りよく接続することができる接続材料付き半導体素子およびその製造方法を提供する。 【解決手段】半導体材料１の表面に設けられた電極２となる金属層と、前記金属層の表面であって前記半導体材料の表面に接する面とは異なる面上に設けられた、前記金属層を被接続部材に接続させるための接続金属層５と、を備え、前記接続金属層５は、Ａｌ濃度が０ｍａｓｓ％より大きく１０ｍａｓｓ％以下であるＺｎ−Ａｌ合金、またはＺｎとＡｌとを積層させて形成された積層体からなるものである。 【選択図】図１

銅合金線

【課題】高い引張強度と高い導電率を有する銅合金線を提供する。【解決手段】１０００ｍａｓｓ ｐｐｍ以上３０００ｍａｓｓ ｐｐｍ以下のＳｎと、Ｔｉと、酸素と、を含有し、残部が銅と不可避不純物からなり、前記銅中に前記Ｓｎと前記Ｔｉと前記酸素との化合物が存在している銅合金線。【選択図】なし

銅系材料の製造方法及び銅系材料製造装置

【課題】小さい粒径（例えば粒径１０μｍ以下）の非金属介在物を溶銅中で捕捉する能力を向上させることにより、非金属介在物によるタンディッシュの流出口の閉塞を防止して長時間の連続鋳造を可能とし、かつ製品への非金属介在物の混入を低減して割れ等の不良を防止できる銅系材料の製造方法及び銅系材料製造装置を提供する。【解決手段】本発明の銅系材料の製造方法は、ＢＮと、Ｓｉ３Ｎ４、ＳｉＯ２、ＡｌＮ、Ａｌ２Ｏ３、ＭｇＯ及びＣａＯから選ばれる１種以上とを用いたＢＮ系複合材からなるフィルタ１を使用して溶銅４中の粒径１０μｍ以下の非金属介在物を除去する工程を備える。【選択図】図１

撮像装置、及びその製造方法

【課題】撮像素子デバイスが電極端子群を介して基板に搭載される実装構造を有する撮像装置において、所望の電極端子群の接続信頼性を確保でき、且つ、簡便な製造工程によって実現できる、不要光遮断構造を提供する。 【解決手段】撮像装置は、入射光を集光するレンズが搭載された鏡筒と、レンズから出射される光を電気信号に変換して出力する撮像素子デバイスと、撮像素子デバイスを実装するための撮像素子基板と、基部と基部から延説された縁部とを有し、撮像素子デバイスの周囲を囲み、撮像素子基板とともに遮光空間を形成することにより、撮像素子デバイスの撮像面以外からの光を遮断する遮光部材と、鏡筒と撮像素子基板を固定する筐体と、撮像素子基板を筐体に固定するための固定具と、を有する。遮光部材は、撮像素子基板と鏡筒または筐体とによって挟まれ、固定具によって生じる固定力によって加圧され、縁部が撮像素子及び／又は鏡筒側面に密着している。 【選択図】図１

銅鋳造材の製造方法、並びに銅荒引線の製造方法

【課題】銅荒引線の表面に割れ等の欠陥が生じにくい銅鋳造材の製造方法、並びに銅荒引線の製造方法を提供する。【解決手段】本発明の一態様において、原料銅を溶解炉で溶解して溶銅を得る溶解工程と、前記溶銅を連続鋳造することによって銅鋳造材を得る連続鋳造工程と、を含み、前記連続鋳造工程では、前記溶銅を温度Ｔ（℃）で連続鋳造するときに得られる前記銅鋳造材の厚さ方向に形成される柱状晶の平均の長さＬ1と前記銅鋳造材の幅方向に形成される柱状晶の長さＬ2との比Ｌ1／Ｌ2が下記（１）式を満たすように連続鋳造されることを特徴とする銅鋳造材の製造方法を提供する。Ｌ1／Ｌ2≦（１５８０−Ｔ）／３００ …（１）【選択図】図１

サブマウントおよびその製造方法

【課題】最上層に形成したＳｎ−Ｚｎ系はんだの濡れ広がりを従来の樹脂やＰｔ等のソルダレジストを設けずに制御することができるサブマウントを提供する。 【解決手段】ＳｉＣやＡｌ２Ｏ３やＡｌＮ等の回路基板に対して、Aｕメタライズ層を形成し、そのAｕメタライズ層の上層にＳｎ−Ｚｎ系はんだを蒸着することにより、Ｓｎ−Ｚｎ系はんだの周囲にＳｎ−Ｚｎ系はんだのレジストとして機能するＡｕとＳｎを主成分とする合金を形成するか、蒸着の代わりにスパッタを用いることにより、Ｓｎ−Ｚｎ系はんだの周囲にＳｎ−Ｚｎ系はんだのレジストとして機能するＡｕとＳｎを主成分とする合金を形成する。この際、Ｓｎ−Ｚｎ系はんだ直下のＺｎがＳｎ−Ｚｎ系はんだ直下のＡｕとの和に対して３８重量％以下となるように形成する。 【選択図】 図１

ガス警報器

【課題】計測出力値の一時的な変動による影響を小さくして警報しきい値の正確な補正を行うことが可能なガス警報器を提供する。【解決手段】このガス警報器１００は、半導体式ガス検知素子から構成されるガス検出部１と、ガス検出部１の出力値が警報しきい値に達した際に警報を出力する出力部４とを備える。ガス警報器１００は、さらに、ガス検出部１の計測出力値が基準出力値に対して増加傾向を示している場合に、基準出力値および警報しきい値の両方を増加させるとともに、計測出力値が基準出力値に対して減少傾向を示している場合に、基準出力値および警報しきい値の両方を減少させるように補正を行う制御部２を備える。【選択図】図４

エナメル線の製造方法

【課題】導体を平角状に圧延するときに生じ得る割れによって皮膜に発泡等の外観不良が発生することを抑制することができるエナメル線の製造方法を提供する。【解決手段】所定の断面を有する導体に対して前記導体の加工応力を緩和する加熱処理を行う工程と、前記加熱処理を行った前記所定の断面を有する導体を平角状の導体に圧延する圧延工程と、前記平角状の導体に皮膜を形成してエナメル線にするする皮膜形成工程と、を含む、エナメル線の製造方法。【選択図】図１

半導体装置の接合構造、その製造方法および接合用合金箔

【課題】Ｓｉなどの半導体をＡｕとＳｉの共晶反応を利用して接合する場合、Ｓｉ酸化膜を破壊し、ＳｉとＡｕを接触させるために、大きな加圧力が必要となり、製造装置が大型化しコストが高いため加圧力を少なくして接合が可能な接合方法を提供する。 【解決手段】Ｓｉなど表面に酸化物を形成しやすい基板１２を合金により接合する場合に、Ａｕと、Ａｕの融点を下げる元素Ａｕ−Ｇｅ層１０と、Ｓｉ酸化物ＳｉＯ２層１１を還元する元素Ａｌ層６、密着層としてのＴｉ層９を含む合金層により、Ａｕの合金を比較的低温で溶融させ、溶融した合金中の還元力を有する元素によりＳｉなどの表面の酸化物を還元して破壊し、ＡｕとＳｉなどの半導体基板との反応により接合する。 【選択図】図４

電子部品

【課題】基板あるいは電子部品の接続部に形成されたはんだ膜表面の酸化を防止し、フラックスレスで接続できる基板あるいは電子部品を提供する。 【課題を解決するための手段】基板１上に、メタライズ２を形成し、その上にＳｎはんだ膜３とＡｇ膜４が形成された構成である。Ａｇ膜４は大気中、室温で酸化されない金属である。ウェットプロセスでも、ＡｇとＳｎの電池反応により、露出したＳｎはんだ膜３の側面のみが酸化されるため、接続に影響を及ぼす、はんだ膜上のＡｇ膜４上面は酸化されない。Ｓｎはんだ膜３の溶融と同時に、Ａｇ膜４はＳｎはんだ中へ溶解するので、Ａｇ膜４が接続を阻害することもない。 【選択図】図１

溶銅用酸素センサ、溶銅用酸素センサ装置、溶銅の酸素濃度検出方法、及び銅線の製造方法

【課題】固体電解質の耐久性が高い溶銅用酸素センサ、溶銅用酸素センサ装置、溶銅の酸素濃度検出方法、及び銅線の製造方法を提供する。【解決手段】酸素センサ１０は、酸素イオン伝導性を有するジルコニア質の固体電解質によって形成された酸素セル２を備え、酸素セル２の内部に供給される気体の酸素濃度と酸素セル２の少なくとも一部が浸漬される溶銅の酸素濃度との酸素濃度差によって発生する電位差に応じた検出電圧を出力する。この固体電解質として、ジルコニア結晶が安定化剤によって部分的に安定化された部分安定化ジルコニアを用いる。酸素セルの熱膨張率の絶対値は、８．２×１０－６／Ｋ以下である。【選択図】図１

荒引線製造装置および荒引線製造方法

【課題】ブローホール欠陥の発生を抑制する荒引線製造装置および荒引線製造方法を提供する。【解決手段】荒引線製造方法は、溶湯供給工程と、鋳造工程と、誘導工程と、を備える。溶湯供給工程では、金属溶湯をノズルから鋳型に供給する。鋳造工程では、溶湯供給工程により供給された金属溶湯を固体化して荒引線を生成する。誘導工程では、溶湯供給工程と鋳造工程との間の工程は、ノズルから供給される金属溶湯の一部を、金属溶湯が固体化する固体化領域に向かう方向とは異なる誘導方向に誘導する。【選択図】図２

コネクタおよび電子制御装置

【課題】はんだがランド周縁部から剥離するリフトオフを抑制するコネクタを提供する。【解決手段】コネクタ２０は、プリント配線基板１１の貫通孔２３の周縁部に設けられたランド１４ａにはんだ付けされるコネクタピン２３へのはんだの濡れ上がりを防止して、はんだがランド１４ａの周縁部において、ランドから剥離するリフトオフを抑制するための濡れ上がり防止部３０を備えている。濡れ上がり防止部３０は、コネクタ本体２１に接続される接続部と、コネクタピン２３が挿通されるコネクタピン挿通部３１とを備え、コネクタピン挿通部３１のプリント配線基板１１との対向面側にはんだ４１と接触する下端面３２を有する。【選択図】図３

荒引線製造方法及び荒引線製造装置

【課題】鋳造の際に、引け巣の欠陥の発生を抑制できる荒引線製造方法及び荒引線製造装置の技術を提供する。【解決手段】荒引線を製造する荒引線製造方法は、スート形成工程と、鋳造工程と、を有する。スート形成工程では、１５０μｍ以下の範囲の厚さのスートを、金属溶湯と接触する鋳型の第１の面及び第２の面に形成する。鋳造工程では、スート形成工程によりスートが形成された鋳型を用いて、金属溶湯の鋳造を行う。このような荒引線製造方法によれば、鋳造の際に、引け巣の欠陥の発生を抑制できる。【選択図】図２

Lead component and method for manufacturing the same, and semiconductor package

To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

ガス警報器

【課題】非検知対象ガスを検知することなく、ガスセンサの鋭敏化に対して適切に対応可能なガス警報器を提供する。【解決手段】このガス警報器１００は、検知対象ガスを検知するガスセンサ１ａと、検知対象ガスの検知結果に基づく報知を行う報知部２と、ガスセンサ１ａによる検知対象ガスの検知結果に応じて、第１レベルの注意報と、第１レベルよりも高い第２レベルの警報と、を行うように報知部２を制御する制御部３とを備える。制御部３は、ガスセンサ１ａによる検知対象ガスの検知結果がガスセンサ１ａの鋭敏化判定条件１０を満たした場合、報知部２による注意報の出力を停止する制御を行うように構成されている。【選択図】図１

ろう接用複合材及びその製造方法

【課題】Pbを含まない安価な材料で構成され、Pbを含む接合材料と同等以上の高い融点を有し、パッケージの気密封止等のための接合材料として好適なろう接用複合材を提供する。 【解決手段】金属で形成された基材１の上に接合材２を積層した構成を有するろう接用複合材１００において、接合材２は、基材１側から亜鉛含有層（亜鉛層３Ａ）、アルミニウム層４及び銅層５をこの順に積層した構成とし、銅層５は、接合材２の最外層を構成する。 【選択図】図１Ｂ

めっき銅線、めっき撚線及び絶縁電線並びにめっき銅線の製造方法

【課題】生産性及び可とう性に優れるめっき銅線、めっき撚線及び絶縁電線並びにめっき銅線の製造方法を提供する。 【解決手段】絶縁電線１０は、複数本のめっき銅線３が撚り合わされているめっき撚線４と、めっき撚線４の外周に被覆された絶縁層５と、を備え、めっき銅線３は、４ｍａｓｓ ｐｐｍ以上５５ｍａｓｓ ｐｐｍ以下のチタン、２ｍａｓｓ ｐｐｍ以上１２ｍａｓｓ ｐｐｍ以下の硫黄、２ｍａｓｓ ｐｐｍを超えて３０ｍａｓｓ ｐｐｍ以下の酸素、不可避的不純物を含む銅線１と、銅線１の外周上のめっき層２と、を備え、伸びが１０％以上であり、０．２％耐力が１４０ＭＰａ以上２００ＭＰａ以下である。 【選択図】図２

電子部品

(57)【要約】 【課題】保存期間中のはんだ膜の剥離を防止する。 【解決手段】積層はんだ膜１２は、二層のＡｕ膜１２ ａ,１２ｃの間にＳｎ膜１２ｂが介在する三層構造を有 している。各Ａｕ膜１２ａ,１２ｃの膜厚ｔ 1 ,ｔ 3 は、最 外層のＡｕ膜１２ｃの膜厚ｔ 1 が、アルミニウム電極お よびその周辺の基板領域１０ａに接触するＡｕ膜１１ａ の膜厚ｔ 3 の２倍以下になるように設計されている。

寿命予測機構を備えた基板、およびその製造方法

【課題】実装基板はんだ接続部の寿命が来ることを、電子部品はんだ接続部よりも先に断線して電気的手法により予知する機構を基板に実装する方法を、コストアップや実装の妨げにならない方法で提供する。【解決手段】隣接する複数の電源層（ベタ層）を持つ回路基板に対し、上記電源層が隣接する間隙部分の基板表面にはんだブリッジを形成したり、中央部にソルダレジストを被せ両端をはんだでコーティングした均一幅の橋渡しランドを作りこんで、これらの場所を先に断線させることで寿命予知を行う。【選択図】図１