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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 6. Отображено 6.
09-07-2008 дата публикации

A chip table top etching device

Номер: CN0101217108A
Автор: HUANG JIANWEI, LIU GUOYOU, ZOU BINGYAN, LI SHIPING, PAN ZHAOHAI, JIANWEI HUANG, GUOYOU LIU, BINGYAN ZOU, SHIPING LI, ZHAOHAI PAN
Принадлежит:

The invention discloses a chip mesa etching device, which mainly includes a spacer and a chip frame; the spacer takes a shape of round slice; the chip frame includes baffles, a locking device, a rotation device and a fixed frame; the baffles are positioned at the both sides of the chip frame, the outsides of the baffles are connected with the locking device, the locking device can inwardly extrude the baffles, then the spacer and a chip which are arranged between the baffles can be clamped tightly by the baffles, the rotating device is sheathed at the outside of the locking device, the locking device is embedded and sheathed in the side surface of the fixed frame and is connected with the side surface, the locking device and the rotation device extend to the outside from both sides of the side surface of the fixed frame. The invention eliminates the coating of a chip protective coating layer and solves the problems of complicated process procedure and the long time of the traditional method ...

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Номер записи: 1
01-10-2008 дата публикации

Device for coating diffuse source in diffusion technology

Номер: CN0101275283A
Автор: HUANG JIANWEI, LIU GUOYOU, ZOU BINGYAN, WANG DAJIANG, PAN ZHAOHAI, JIANWEI HUANG, GUOYOU LIU, BINGYAN ZOU, DAJIANG WANG, ZHAOHAI PAN
Принадлежит:

A device for coating spread source is disclosed, comprising at least a container. The container has a liquid spread source. The device further comprises at least a first pipeline and at least a second pipeline. One end of the first pipeline extends below liquid level of the liquid spread source. Another end is a thin mouth sprout; one end of the second pipeline leads to condensed gas that flows at high speed. Another end is a thin mouth spout; the spout is adhered compactly with the nozzle to form negative pressure at the spout by the condensed gas flowing at high speed from the nozzle, absorbing the liquid spread source 110 in the container to spray on surface of the silicon sheet. The invention is capable of forming an even spread source coat on the surface of the wafer.

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Номер записи: 2
09-06-2010 дата публикации

A chip table top etching device

Номер: CN0101217108B
Автор: LI SHIPING, HUANG JIANWEI, PAN ZHAOHAI, ZOU BINGYAN, LIU GUOYOU, SHIPING LI, JIANWEI HUANG, ZHAOHAI PAN, BINGYAN ZOU, GUOYOU LIU
Принадлежит:

The invention discloses a chip mesa etching device, which mainly includes a spacer and a chip frame; the spacer takes a shape of round slice; the chip frame includes baffles, a locking device, a rotation device and a fixed frame; the baffles are positioned at the both sides of the chip frame, the outsides of the baffles are connected with the locking device, the locking device can inwardly extrudethe baffles, then the spacer and a chip which are arranged between the baffles can be clamped tightly by the baffles, the rotating device is sheathed at the outside of the locking device, the lockingdevice is embedded and sheathed in the side surface of the fixed frame and is connected with the side surface, the locking device and the rotation device extend to the outside from both sides of theside surface of the fixed frame. The invention eliminates the coating of a chip protective coating layer and solves the problems of complicated process procedure and the long time of the traditional method ...

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Номер записи: 3
23-06-2023 дата публикации

Method for depositing carbon film on groove type device and groove type device

Номер: CN116313752A
Автор: ZHANG DONGHUA, ZHU QIWEI, LIU QIN, WANG ZHICHENG, CHENG YINHUA, ZHAO YANLI, PAN ZHAOHAI
Принадлежит:

The invention relates to the field of semiconductor manufacturing, and discloses a method for depositing a carbon film on a groove type device and the groove type device.The method comprises the steps that the surface of a wafer of the groove type device is coated with a photoresist layer in a spinning mode, and a first wafer is formed; performing primary carbon film deposition with the thickness of T1 on the first wafer to form a second wafer; removing the photoresist layer and the carbon film layer deposited on the surface of the second wafer to form a third wafer; the third wafer is subjected to second-time carbon film deposition with the thickness of T2, a target wafer is formed, and c is the step coverage rate of the groove type device. Through the two times of carbon film deposition, the thicknesses of the carbon films on the wafer surface, the side wall of the groove and the bottom of the groove of the groove type device are the same, the same carbon protection capability is achieved ...

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Номер записи: 4
23-06-2023 дата публикации

Alignment method for back photoetching of SiC power device and SiC power device

Номер: CN116300349A
Автор: ZENG LIANG, CHENG YINHUA, WANG HUIZHEN, ZHANG LE, GONG ZHIYU, ZHAO YANLI, PAN ZHAOHAI
Принадлежит:

The invention relates to the field of semiconductor manufacturing, and discloses an alignment method for back photoetching of a SiC power device and the SiC power device, which utilizes the transparent characteristic of a SiC wafer and uses a front mark for alignment in back photoetching. A specific lightproof film layer or a film layer with obvious color difference is deposited on the surface of a wafer in front photoetching, due to the characteristics of the film layer, a mark required by alignment can be obtained after etching, probe light with a proper wave band can be selected in back photoetching, a stronger alignment signal can be obtained when the mark is scanned, a signal difference is formed between the mark and other areas, and the alignment accuracy is improved. The position of the front mark can be obtained through the signal difference, the aim of aligning with the front mark is achieved, and the alignment precision is improved after alignment of multiple positions.

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Номер записи: 5
23-06-2010 дата публикации

Electron beam evaporation plant

Номер: CN0101748369A
Автор: CAO WEICHEN, HUANG JIANWEI, PAN ZHAOHAI, WANG ZHENGYING, ZOU BINGYAN, WEICHEN CAO, JIANWEI HUANG, ZHAOHAI PAN, ZHENGYING WANG, BINGYAN ZOU
Принадлежит:

The invention discloses an electron beam evaporation plant, comprising a copper crucible with crucible lining made from heat resisting materials inside. Clearance is left between the crucible lining and the copper crucible, which greatly reduces the thermal coefficient between the crucible lining and the copper crucible so as to effectively avoid the negative influences on the emission of electron beams when heat of the crucible lining is conducted to the magnet and coil through the copper crucible. Meanwhile, due to small heat conduction loss, a relatively smaller beam power can be employed to maintain a relatively high evaporation rate. As the aluminum source melting in the crucible lining is even, aluminum splashing can be effectively avoided.

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Номер записи: 6