Applications of 20(R)-ginsenoside Rg3 in preparation of drugs for releasing or/and treating insomnia, and drugs for releasing or/and treating insomnia

The present invention discloses new applications of 20 (R)-ginsenoside Rg3 in preparation of drugs for releasing or/and treating insomnia. According to the present invention, experimental results prove that the insomnia treatment effect of the 20 (R)-ginsenoside Rg3 is significant, the effect is rapid, the toxic-side effect is low, the drug is the insomnia treatment drug with characteristics of safety, efficiency, stability and simple preparation process, and the method is suitable for industrial production and is easy to spread; and the new drug source is provided for prevention and treatment of the insomnia and complications thereof.

Centrifugal pipe making machine with tubular core mold

The centrifugal pipe making machine with tubular core mold has one frame, one motor, and several mold rotating carriages, each of which consists of two end plates with connected axle head, one regulating blocking board, one lower connecting rack and one upper connecting rack. It features the motor connected through a transmission mechanism to one of the mold rotating carriages, the connection between adjacent mold rotating carriages via connector or coupling, the protecting hood on the frame and outside mold rotating carriages, a horizontal inversion mechanism connected to the regulating blocking board, and a locating mechanism in the position corresponding to the horizontal inversion mechanism. The present invention has the advantages of high safety, fast regulating speed of the regulating blocking board, high production efficiency and high product quality.

Trench gate IGBT chip

The invention provides a trench gate IGBT chip. The trench gate IGBT chip comprises a plurality of cells connected in parallel, each cell comprises a first trench gate and a second trench gate, each first trench gate and the corresponding second trench gate are isolated through a first conduction type region, each second trench gate is located on one side of the corresponding first trench gate, and an emitter and a second conduction type source electrode region are arranged on the other side of the corresponding first trench gate. The trench gate IGBT chip further comprises third trench gates formed in the first conduction type region, and the straight line where the gate lengths of the third trench gates are located is intersected with the straight line where the gate lengths of the second trench gates are located. Compared with the prior art, the trench gate IGBT chip has the advantages that technology difficulty and technology cost for manufacturing cannot be increased. In addition, ...

IGBT CHIP HAVING COMPOSITE GATE STRUCTURE

An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region () and a gate region. The gate region includes a planar gate region () and a trench gate region (), which are respectively disposed at both sides of the source region (). A planar gate and a trench gate are compositely disposed on the same cell (), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area. 1. An IGBT chip having a mixed gate , comprising a wafer substrate and a plurality of cells sequentially arranged on an upper surface of the wafer substrate , wherein each of the cells comprises two mixed gate units in mirror symmetry ,wherein each of the mixed gate units comprises a source region and a gate region which are disposed on the wafer substrate, wherein the gate region comprises a planar gate region and a trench gate region which are disposed at two sides of the source region respectively,wherein the trench gate region comprises a trench gate sub-region located in the wafer substrate and an auxiliary sub-region located above the trench gate sub-region, wherein the trench gate sub-region comprises a trench disposed in the wafer substrate, a first oxidation layer disposed on an internal surface of the trench, and polycrystalline silicon filled in the trench to form a trench gate, and the auxiliary sub-region comprises a second oxidation layer formed on the upper surface of the wafer substrate, polycrystalline silicon formed on the second oxidation layer, and an insulation layer which encloses an external surface of the polycrystalline silicon on the second oxidation layer, wherein the polycrystalline silicon in the trench and the polycrystalline silicon in the auxiliary sub-region are connected with each other.2. The IGBT chip having a mixed gate according to claim 1 , wherein the planar ...

Application of 20(R)-ginsenoside Rg3 in preparation of medicines for improving or/and treating liver cirrhosis diseases

The invention discloses a novel application of 20(R)-ginsenoside Rg3 in preparation of medicines for improving or/and treating liver cirrhosis diseases. The test proves that the 20(R)-ginsenoside Rg3 is obvious in curative effect of treating liver cirrhosis, is fast in effectiveness, small in toxic and side effects, is a safe, high-efficiency and stable medicine for treating liver cirrhosis with simple preparation process and is suitable for industrial production and easy to popularize. The invention provides a novel drug source for preventing and treating liver cirrhosis and complications thereof.

A chip table top etching device

The invention discloses a chip mesa etching device, which mainly includes a spacer and a chip frame; the spacer takes a shape of round slice; the chip frame includes baffles, a locking device, a rotation device and a fixed frame; the baffles are positioned at the both sides of the chip frame, the outsides of the baffles are connected with the locking device, the locking device can inwardly extrude the baffles, then the spacer and a chip which are arranged between the baffles can be clamped tightly by the baffles, the rotating device is sheathed at the outside of the locking device, the locking device is embedded and sheathed in the side surface of the fixed frame and is connected with the side surface, the locking device and the rotation device extend to the outside from both sides of the side surface of the fixed frame. The invention eliminates the coating of a chip protective coating layer and solves the problems of complicated process procedure and the long time of the traditional method ...

Method for preparing SiC MOSFET gate oxide layer

The invention relates to a method for preparing a SiC MOSFET gate oxide layer, and belongs to the field of SiC MOSFET devices. The method comprises the following steps: thermally growing a SiO2 gate oxide layer on a SiC epitaxial layer, then annealing the gate oxide layer at the temperature of 500-1000 DEG C, preferably 700-800 DEG C, and in the environment containing SiH2Cl2, preferably feeding SiH2Cl2 according to a speed rate of 0.5-2 slm, enabling the annealing pressure to be 100-1000 mbar, and retaining annealing for 30-180 min. According to the method disclosed by the invention, the gate medium SiO2 layer is annealed by SiH2Cl2 only, so that the method can combine the effects of separately using H2 and Cl2 for annealing, meanwhile eliminates the oxygen vacancy trapped charge in the SiO2 gate medium and the dangling bond in a SiO2/SiC interface.

Trench gate IGBT chip

The invention provides a trench gate IGBT chip which comprises a second polycrystalline silicon layer located above the surface of a substrate and a gate region. The substrate and the second polycrystalline silicon layer are isolated through an insulation layer. The second polycrystalline silicon layer comprises a first polycrystalline silicon sub layer and a second polycrystalline silicon sub layer. The first polycrystalline silicon sub layer is used for leading a first polycrystalline silicon layer in a corresponding trench of a conventional gate to the surface of the substrate, and the first polycrystalline silicon sub layer is further used for connecting the second polycrystalline silicon sub layer and the gate region. The second polycrystalline silicon sub layer is used for leading a first polycrystalline silicon layer in a corresponding trench of a virtual gate to the surface of the substrate selectively according to preset conditions. Thus, the manufacturing method of the IGBT chip ...

Failure testing circuit and method of power device

The invention discloses a failure testing circuit and method of a power device. The failure testing circuit comprises a first switch, a second switch and a controller. The first switch is connected with the tested device in series, and the first switch and the tested device form a first conducting branch circuit; the second switch is connected with the first conducting branch circuit in parallel; the controller is connected with the first switch and the second switch and used for turning on the first switch and turning off the second switch or turning off the first switch and turning on the second switch according to a detected status signal of the tested device. By means of the failure testing circuit and method, when the tested device fails, a bypass can be switched on in time to dredge current, and therefore it is avoided that the tested device is attacked by large current after failing.

Application of 20(R)-ginsenoside Rg3 in preparation of medicament for relieving or/and treating fatty liver

The invention discloses new application of 20(R)-ginsenoside Rg3 in preparation of a medicament for relieving or/and treating fatty liver. Experiments prove that 20(R)-ginsenoside Rg3 has a significant effect of treating fatty liver, can take effect rapidly, has low toxic or side effect, is a fatty liver treating medicament which is safe, efficient, stable and simple to prepare, and is suitable for industrialized production and easy to popularize. According to the invention, a new medicament source for preventing and treating fatty liver and complications thereof is provided.

Trench gate IGBT

A trench gate IGBT comprises a dummy gate and a real gate. The dummy gate is positioned between two real gates. An emitter metal contact area is in contact with the dummy gate such that the emitter metal contact area is not limited to an area between trenches. The emitter metal contact area includes an area where the emitter metal contact area is in contact with the dummy gate, thereby enlarging the emitter metal contact area, and accordingly reducing a distance between the real gate and the dummy gate. Consequently, the distance between the real gate and the dummy gate is no longer affected by a minimum emitter contact area, and turn-on voltage drop of the trench gate IGBT can be significantly reduced.

Health tea for preventing and/or treating influenza and preparation method thereof

The invention discloses a health tea for preventing and/or treating influenza and a preparation method thereof. The health tea is prepared from honeysuckle flowers and weeping forsythia leaves, wherein the honeysuckle flowers and the weeping forsythia leaves are soaked by a ginseng extract solution. The cold nature of the honeysuckle flowers and the weeping forsythia leaves is balanced or counteracted by the hot nature of ginseng, thus the health tea is rich in aroma, is warm in nature and is not cold and hot, can be drunk to treat influenza and enhance immunity in the influenza season, is suitable for people to drink in daily life and has the function of preventing and/or treating influenza. The health tea has a significant effect, is convenient to drink, is good in taste and has no side and toxic effects.

Novel silicon carbide MOSFET and manufacturing method thereof

The invention provides a novel silicon carbide MOSFET and a manufacturing method of the MOSFET. According to the manufacturing method, after all ions are implanted into a silicon carbide MOSFET device, a P-epitaxial layer with the low surface roughness is formed on a P trap surface in an epitaxy mode, and carriers are transported in an inversion channel in the P-epitaxial layer. As the roughness of the P-epitaxial layer is lower than that of the P trap surface, the probability of colliding or scattering of the carriers in the inversion channel is reduced, the carrier mobility of the inversion channel of the silicon carbide MOSFET device is increased, and on resistance of the device is reduced.

Transition and diffusion method for aluminum impurity source

The invention discloses an aluminum impurity source diffusion method providing a vacuum diffusion furnace and a half-sealed diffusion pipe with a plug; firstly, processing saturated diffusion doping for silicon co-chip and inner wall of the diffusion pipeline, then processing diffusion doping for test chip for t1 time by the silicon co-chip and inner wall of the diffusion pipeline, measuring thinlayer resistance of the test chip, calculating time t2 that needed by normal chip diffusion according to experience formula, finally processing diffusion doping that is accurately controlled for the normal chip for t2 time by the silicon co-chip and inner wall of the diffusion pipeline after saturated diffusion doping. Therefore, manufacturing cost is reduced and potential safety hazard that useshydrogen is eliminated, providing even, stable, controllable chip surface doping concentration.

Application of 20(R)-ginsenoside Rg3 in preparation of medicament for relieving or/and treating asthma and medicament

The invention discloses new application of 20(R)-ginsenoside Rg3 in preparation of a medicament for relieving or/and treating asthma. Experiments prove that 20(R)-ginsenoside Rg3 has a significant effect of treating asthma, can take effect rapidly, has low toxic or side effect, is an asthma treating medicament which is safe, efficient, stable and simple to prepare, and is suitable for industrialized production and easy to popularize. According to the invention, a new medicament source for preventing and treating asthma and complications thereof is provided.

Application of 20(R)-ginsenoside Rg3 in preparation of medicines for treating dysmenorrhea

The invention discloses a novel application of 20(R)-ginsenoside Rg3 in preparation of medicines for preventing and treating dysmenorrhea. Tests show that the 20(R)-ginsenoside Rg3 is significant in treating effects for the dysmenorrhea, quick in effectiveness, low in toxic and side effects, safe, efficient, stable, simple in preparation process, suitable for industrial production and prone to popularization. The application provides a novel medicine source for preventing and treating the dysmenorrhea and complications thereof.

Device for coating diffuse source in diffusion technology

A device for coating spread source is disclosed, comprising at least a container. The container has a liquid spread source. The device further comprises at least a first pipeline and at least a second pipeline. One end of the first pipeline extends below liquid level of the liquid spread source. Another end is a thin mouth sprout; one end of the second pipeline leads to condensed gas that flows at high speed. Another end is a thin mouth spout; the spout is adhered compactly with the nozzle to form negative pressure at the spout by the condensed gas flowing at high speed from the nozzle, absorbing the liquid spread source 110 in the container to spray on surface of the silicon sheet. The invention is capable of forming an even spread source coat on the surface of the wafer.

Reverse conducting IGBT device and manufacturing method therefor

A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

IGBT chip and preparation method thereof

The invention provides an IGBT chip and a preparation method thereof. The IGBT chip comprises a chip front face and a chip back face. The chip front face comprises a cell area, a gate area, an equipotential ring area and a terminal structure area. The cell area comprises a plurality of mutually parallel cells. Each of the cells comprises an emitter electrode. The chip back face comprises a collector region, and a local minority injection efficiency control area is arranged in at least one corresponding collector area under the emitter electrode, a corresponding collector area under the gate area, a corresponding collector area under the equipotential ring area and/or a corresponding collector area under the terminal structure area. The local minority injection efficiency control area can control the minority injection efficiency in the area. Through the IGBT chip provided by the invention, the contradictory relationship between conduction loss and turn-off loss can be alleviated, and the ...

BIPOLARTRANSISTOR MIT ISOLIERTEM GATE UND HERSTELLUNGSVERFAHREN DAFÜR

Offenbart werden ein Bipolartransistor mit isoliertem Gate und ein Herstellungsverfahren dafür. Ein Hilfsnut-Gate, nämlich eine Struktur aus einer Hilfsnut (303), einer Hilfs-Gate-Schicht (303a) und der entsprechenden Gate-Oxidschicht (304), ist unter einer Emitter-Metallelektrode (401) zwischen einer ersten gemeinsamen Nut (301) und einer zweiten gemeinsamen Nut (302) so angeordnet, dass ein Trägerpfad bereitgestellt wird, wenn der Bipolartransistor mit isoliertem Gate abgeschaltet ist, so dass nicht nur die Abschaltgeschwindigkeit des Bipolartransistors mit isoliertem Gate erhöht wird, sondern auch die in Sperrrichtung gepolte Sicherheitsbetriebsbereich-Charakteristik des Bipolartransistors mit isoliertem Gate verbessert wird, wodurch die Leistungsfähigkeit des Bipolartransistors mit isoliertem Gate verbessert wird.

MOS capacitor and manufacturing method thereof

The invention relates to an MOS capacitor and a manufacturing method thereof. The method comprises the following steps: step 1, an SiC epitaxial layer is arranged on a substrate; step 2, an oxygen isolation layer is arranged on the SiC epitaxial layer; step 3, a silicon layer is arranged on the oxygen isolation layer; step 4, the silicon layer is oxidized into an SiO2 layer. The MOS capacitor manufactured by the method is higher in carrier mobility of inversion channels and better in performance.

Cement thin-wall pipe and manufacturing method thereof

The invention relates to a kind of thin concrete inner tube. It is made from in proportion 1 concrete, sand 1~3, water 0.3~0.7, short fiberglass shred or intermediary alkali shred 0.02~0.05, length of which is about 6~16mm.The method to make the thin concrete inner tube is as following: mix the material equably and then put them in the module. Put the module in rotating container that is fixed on the driving device and fix two boards at the position opposite to the two sides of the module. Rotate the rotating container for a certain time. Take out the module and get the finished product. The tube made by the above step is light and high intensity. Because it is simple using the invention can finish shaping with only one step so it can save the production time and the cost.

Potentilla anserina L. rice flour food and production method thereof

A potentilla anserina rice powder food and production method thereof, belongs to the processing field of foods. The invention adopts potentilla anserina as raw material to prepare single potentilla anserina rice powder food aa1 by cleaning, cooking, drying or direct dying, smashing into fine powder and passing through sieve of 20-300 meshes, or prepare potentilla anserina rice powder food aa2 by adding in cooked sticky rice powder of sticky rice, glutinous broomcorn millet, sticky corn, sticky broomcorn, wheat, root of lotus, poi, sweet potato, yam, konjak, potato and the like according to the weight ratio of 1/1-9, passing fine powder through sieve of 20-300 meshes, and mixing well. The food is rich in nutrient components, such as amino acid, vitamins, trace elements, and the like and has such health care functions as oxygen deficiency resistance, fatigue resistance, blood supplement, immunologic function enhancement and the like.

Intelligent power device

The invention relates to an intelligent power device. The intelligent power device comprises a power semiconductor chip, a driving circuit, a control circuit and a current sensor which are integrated through packaging, wherein the power semiconductor chip has a structure of four bridge arms made of antiparallel connection of a quantity of IGBT chip and FRD chip in proportion; the driving circuit is connected with a grid, a collector and an emitter of the power semiconductor chip; the control circuit is connected with the driving circuit to control the turn-on and turn-off of the power semiconductor chip; and the current sensor acquires output current for detecting the power semiconductor chip and sends the output current to the control circuit, and the control circuit controls the power output of the power semiconductor chip according to an output current value. In the intelligent power device, a plurality of functional elements are integrated, so the integration level is high, and equipment ...

Insulated gate bipolar transistor and preparation method therefor

Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Copper metallization structure of power semiconductor chip and preparation method of copper metallization structure

The invention provides a copper metallization structure of a power semiconductor chip and a preparation method of the copper metallization structure. The copper metallization structure comprises a barrier layer, a seed copper layer and a copper metallization layer which are sequentially located on a substrate, and further comprises a reinforcing layer, wherein the reinforcing layer is located between the seed copper layer and the copper metallization layer or located between the barrier layer and the seed copper layer or located on the copper metallization layer. Due to the structure, the thickness of the copper metallization layer can be easily decreased, technological difficulty and cost can be easily reduced, and the service life and reliability of bonding points of copper leads can be ensured.

Silicon carbide MOSFET device and method for manufacturing the same

A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed.

Centrifugal pipe making machine with tubular core mold

The centrifugal pipe making machine with tubular core mold has one frame, one motor, and several mold rotating carriages, each of which consists of two end plates with connected axle head, one regulating blocking board, one lower connecting rack and one upper connecting rack. It features the motor connected through a transmission mechanism to one of the mold rotating carriages, the connection between adjacent mold rotating carriages via connector or coupling, the protecting hood on the frame and outside mold rotating carriages, a horizontal inversion mechanism connected to the regulating blocking board, and a locating mechanism in the position corresponding to the horizontal inversion mechanism. The present invention has the advantages of high safety, fast regulating speed of the regulating blocking board, high production efficiency and high product quality.

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N- drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer. By optimizing the P+ region, the present disclosure forms a good source ohmic contact, reduces the on-resistance, and also shorts the source electrode and the P well to prevent the parasitic transistor effect of the parasitic NPN and PiN, which may take both conduction characteristics and the breakdown characteristics of the device into consideration, and may be applied to a high voltage, high frequency silicon carbide MOSFET device. The self-aligned manufacturing method used in the present disclosure simplifies the process, controls a size of a channel accurately, and may produce a lateral and vertical power MOSFET.

Method for packaging silicon carbide power device

The invention relates to a method for packaging a silicon carbide power device. In the method, copper-clad aluminum nitride is selected as a material of a lining plate; a layer of molybdenum sheet serving as a welding surface is arranged on the lining plate; and nickel-plated aluminum-based silicon carbide is selected as a material of a substrate. The method comprises the following steps of: welding an aluminum-based silicon carbide chip on the welding surface of the lining plate and welding the lining plate on the substrate; welding one end of a lead with an electrode of the silicon carbide chip and welding the other end of the lead with an electrode of the lining plate; and welding a power wiring terminal on the electrode of the lining plate; and mounting a tube shell, filling a heat expansion buffer layer and a sealant and mounting a tube cap. According to the method, the service temperature of the silicon carbide power device can be effectively improved.

Sludge direct doping system and control method

The invention discloses a sludge direct doping system and a control method. The sludge direct mixing system has the defects of many control linkage conditions, complex control algorithm, poor logicality, many fault points, high maintenance cost, tedious man-machine interface and insufficient humanization. And the self-absorption performance of equipment is poor. Comprising a square stock bin (100), a sliding frame (200), a gate valve (300), a comprehensive hydraulic station (201) and a spiral conveyor (400), a level gage (600) is installed on the square stock bin and used for detecting the amount of materials in the square stock bin, and the sliding frame is installed at the lower end of the square stock bin; the spiral conveyor is fixed at the lower end of the square stock bin, a hydraulic gate valve is connected between the spiral conveyor and the square stock bin, a cone valve pump is installed at the lower end of the spiral conveyor, and an outlet of the cone valve pump is connected ...

Application of 20(R)-ginsenoside Rg3 in preparation of medicine for relieving and/or treating alcoholic liver disease and medicine

The invention discloses a novel application of 20(R)-ginsenoside Rg3 in preparation of a medicine for relieving and/or treating an alcoholic liver disease. An experiment proves that the 20(R)-ginsenoside Rg3 is significant in curative effect on alcoholic liver, fast in acting, and small in toxic and side effect, is a simple, efficient and stable medicine with a simple preparation technology for treating the alcoholic liver, and is suitable for industrialized production and easy to popularize. A new medicine source is provided for prevention and treatment of the alcoholic liver and complications thereof.

Torpedo ladle lining repair gunning mix

The invention relates to a torpedo ladle lining repair gunning mix, belonging to the technical field of torpedo ladles for transporting molten iron. The torpedo ladle lining repair gunning mix comprises the following components in percentage by weight: 45-60% of brown fused alumina particle, 10-20% of silicon carbide particle, 1-5% of kyanite powder, 1-5% of Gangxi earth, 1-10% of active alpha-Al2O3 powder, 1-7% of silicon micropowder, 1-5% of metallic silicon powder, 0-5% of ball pitch, 0-5% of amorphous graphite and 2-10% of pure calcium aluminate cement. The raw materials are weighed according to the particle sizes and proportions and uniformly mixed in a mixer. The torpedo ladle lining repair gunning mix has favorable refractoriness, oxidation resistance and slag iron permeation and corrosion resistance at the torpedo ladle service temperature of 1400-1530 DEG C.

Adopt air purifier of outer air inlet of wall body

The utility model relates to an adopt air purifier of outer air inlet of wall body, including the water tank body, intake stack, air -out pipeline, the water tank body wherein one side provides the intake stack, the intake stack pass the wall body be provided outdoor, the intake stack inside by the air intake to indoor orientation the filter screen has set gradually, the fan of blowing, wire spiral, solos filter screen, be provided with ultraviolet lamp I in the solos filter screen wherein, provide the air -out pipeline on water tank body upper portion, alkaline solution, the internal box that drenches with rain of having put of water tank are equipped with to the internal chamber of water tank bottom. The utility model discloses beneficial effect does: air intake through this structure directly is provided outdoorly, makes to enter the indoor air for having purified promptly, and reducible contaminated air enters indoor harm to the human body, the spreading value that utilizes that simple ...

Tubular shape core mould centrifugation tube machine equipped with shield cap

The invention relates to a tubular core mould eccentric tube machine provided with a protecting shield, comprising a chassis and an engine; two sides of the chassis are respectively fixed with a mould rotating frame, and the engine and the mould rotating frame are connected by a transmission mechanism. The invention is characterized in that: the chassis is provided with a protecting shield covered on the mould rotating frame. The invention has the advantages of convenient operation, reliable working, good safety performance, and can effectively avoid the stuff filled in a rotating cylinder from being thrown out and injuring the operator, and improve the environmental sanitary condition of the working place.

Transition and diffusion method for aluminum impurity source

The invention discloses an aluminum impurity source diffusion method providing a vacuum diffusion furnace and a half-sealed diffusion pipe with a plug; firstly, processing saturated diffusion doping for silicon co-chip and inner wall of the diffusion pipeline, then processing diffusion doping for test chip for t1 time by the silicon co-chip and inner wall of the diffusion pipeline, measuring thin layer resistance of the test chip, calculating time t2 that needed by normal chip diffusion according to experience formula, finally processing diffusion doping that is accurately controlled for the normal chip for t2 time by the silicon co-chip and inner wall of the diffusion pipeline after saturated diffusion doping. Therefore, manufacturing cost is reduced and potential safety hazard that uses hydrogen is eliminated, providing even, stable, controllable chip surface doping concentration.

Power semiconductor device

The invention relates to a power semiconductor device which comprises a first electrode, a second electrode, a chip arranged between the first electrode and the second electrode and a bypass conduction unit arranged between the first electrode and the second electrode, the bypass conduction unit comprises a conductive element and a fixed element, the fixed element is configured to prevent the conductive element from being conducted with the first electrode and the second electrode during normal working of the chip and remove the prevention on the conductive element after the chip is out of work due to heating expansion, so that the first electrode is conducted with the second electrode via the conductive element. After the chip is out of work, the first electrode and the second electrode can be conducted via the bypass conduction unit, therefore, the power semiconductor device can still normally work even if the chip is out of work.

Physical motion tests adjusting device

Physical motion tests adjusting device. The inclined plane of present physics application experiment usefulness all is that the swash plate is formed with dull and stereotyped simply setting up together, and it is just passable to set up the support behind when adjusting the angle of swash plate, the extravagant time of testing. The utility model discloses the constitution includes: compoboard (14), the compoboard comprises swash plate (1) and dull and stereotyped (2), the left end of swash plate has bar hole (13), the swash plate is connected through connecting axle (5) with dull and stereotyped, it is downthehole that the connecting axle is located the bar, adjusting nut (16) are installed at the both ends of connecting axle, conveyor (3) are all installed to the left end and the dull and stereotyped right -hand member of swash plate, the tip and the conveyor fixed connection of cloth (4), the cloth is laid on swash plate and dull and stereotyped upper portion, flattening device (6)are ...

REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR

A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

Copper metallization structure of power semiconductor chip and manufacturing method thereof

The invention provides a copper metallization structure of a power semiconductor chip and a manufacturing method thereof. The copper metallization structure comprises a first blocking layer, a first red copper layer, a first copper metallization layer, a second blocking layer, a second red copper layer and a second copper metallization layer, wherein the first blocking layer, a first red copper layer and a first copper metallization layer are sequentially located above a first region of a substrate, and the second blocking layer, the second red copper layer and the second copper metallization layer are sequentially located above a second region of the substrate. The copper metallization structure further comprises a first reinforcing layer and a second reinforcing layer, wherein the first reinforcing layer is located between the first blocking layer and the first red copper layer, or the first reinforcing layer is located above the first copper metallization layer. The second reinforcing ...

Silicon carbide power module and packaging method thereof

The invention relates to a packaging method of a silicon carbide power module, comprising the following steps of: welding an aluminium nitride isolated layer on a molybdenum plate, placing silicon carbide chips into empty spaces of the aluminium nitride isolated layer to be welded with the molybdenum plate; welding molybdenum blocks on the silicon carbide chips, reserving gate lead slots on the molybdenum blocks; placing leads into the gate lead slots, welding and fixing, collecting the leads and leading the leads out; casting and moulding the molybdenum blocks, the silicon nitride isolated layer and the silicon carbon chips in an integrating way, mounting a base, a tube shell and a tube cap, and packaging. The invention also provides a silicon carbide power module. By adopting the method provided by the invention, the silicon carbon power module has higher reliability and stronger thermal cycle capability under the working conditions of high power and high temperature.

Silicon carbide MOSFET device and method for manufacturing the same

The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N− drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer. By optimizing the P+ region, the present disclosure forms a good source ohmic contact, reduces the on-resistance, and also shorts the source electrode and the P well to prevent the parasitic transistor effect of the parasitic NPN and PiN, which may take both conduction characteristics and the breakdown characteristics of the device into consideration, and may be applied ...

Heat-radiating insulating lining board, packaging module comprising lining board and manufacturing method thereof

The invention discloses a heat-radiating insulating lining board applied to a power electronic module, a packaging module comprising the lining board and a manufacturing method thereof. The heat-radiating insulating lining board comprises an upper metallized layer, a ceramic layer, a lower metallized layer and a metal post array, wherein the upper metallized layer is located on the upper surface of the ceramic layer, the lower metallized layer is located on the lower surface of the ceramic layer, the ceramic layer is located between the upper metallized layer and the lower metallized layer, and the metal post array is connected with the lower metallized layer. The packaging module comprises the heat-radiating insulating lining board, a packaging housing and a liquid-cooled radiator, wherein the heat-radiating insulating lining board is installed on the surface of the liquid-cooled radiator through the packaging housing, and the metal post array is in direct contact with cooling liquid in ...

Front structure of power semiconductor chip and manufacturing method of front structure of power semiconductor chip

The invention provides a front structure of a power semiconductor chip and a manufacturing method of the front structure of the power semiconductor chip. The manufacturing method includes the steps of providing a substrate in the first conduction type, wherein the substrate comprises a substrate front face, and the substrate front face comprises a first son surface, a second son surface and a third son surface; forming an electrode area in a first son surface area of the substrate, and forming a channel cut-off ring in the first conduction type in the third son surface area, wherein the electrode area at least comprises an electrode, each electrode comprises a source area in the first conduction type, and the channel cut-off ring and the source areas are formed at the same time. By means of the manufacturing method, the manufacturing technological processes of the front structure of the power semiconductor chip are simplified, and technological cost is reduced. In addition, the voltage-resistant ...

Prevent exhaust apparatus of falling gas

The utility model provides a simple structure, low in manufacturing cost's prevent exhaust apparatus of falling gas, including the body, lie in tuber pipe of body one side and the air -supply line that lies in the body opposite side, the outer end of air -supply line is equipped with the air discharge fan, the air -supply line is the hose, this internal water tank that is equipped with liquid in, be equipped with in the air -supply line and stir the lever, when setting up, support the air -supply line level when stirring the lever level for the air -supply line lies in the water tank top, and the air -supply line communicates with each other with the play tuber pipe, when stirring the lever downward sloping when setting up, the incasement that entries is dropped into downwards to the air -supply line, the air -supply line with the tuber pipe separation goes out. The utility model discloses a prevent exhaust apparatus of falling gas, simple structure, with low costs, convenient operation ...

Telescopic rotary frame for tubular core mould

The invention discloses a telescopic rotary frame for a tubular core mould, which comprises a left end plate, a right end plate, and an adjusting block plate. A lower connecting frame and an upper connecting frame are arranged between the left end plate and the right end plate. The telescopic rotary frame is characterized in that the right side of the left end plate is provided with a horizontal transposition mechanism and a positioning mechanism, the horizontal transposition mechanism is connected with the adjusting block plate, and the position of the positioning mechanism corresponds to the position of the horizontal transposition mechanism. The telescopic rotary frame has the advantages of reasonable structure, convenient adjustment, high adjusting speed, high production efficiency, and good product quality.

Quantification blow-in method for blast furnace

A quantification blow-in method for a blast furnace belongs to the technical field of blast furnace iron making. The blow-in process is divided into three phases, namely, a phase of forming a cohesivezone, a phase of taping adaptation, and a phase of mine batch and heavier load. Control standards for the phases and parameters of the blow-in process of the blast furnace are quantified, therefore,important jobs and quantification principles of the respective phase in the blow-in process can be defined. With a wind-adding curve as a core and in combination with actual conditions of blast furnace blow-in, the quantification blow-in technology details the parameters of the blow-in process; in addition, the practice of the technology in the blast furnace also shows that main parameters in theactual blow-in process conforms to the plan, and the blow-in process is smooth and high efficient, which lays the foundation for the quick improvement of economic technological indexes after the blow-in.

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed. 1. A silicon carbide MOSFET device , comprising a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer , wherein a thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer.2. The device according to claim 1 , wherein the thickness of the second gate oxide layer is 1.5 to 4 times the thickness of the first gate oxide layer claim 1 , preferably 2 to 4 times claim 1 , and more preferably 2 to 3 times.3. The device according to claim 1 , wherein the thickness of the first gate oxide layer is in a range from 40 nm to 80 nm claim 1 , preferably in a range from 40 nm to 60 nm; and/orwherein the thickness of the second gate oxide layer is in a range from 60 nm to 320 nm, preferably in a range from 80 nm to 240 nm.4. The device according to claim 1 , wherein the first gate oxide layer corresponds to a channel claim 1 , one part of an N source region claim 1 , and optionally one part of a JFET region of the device claim 1 , and the second gate oxide layer corresponds to at least one part of the JFET region of the device; and{'sup': '+', 'wherein the first gate oxide layer preferably covers 20% to 60% a width of the N source region.'}5. ...

Wire pressing device

The utility model relates to the technical field of communication equipment, and discloses a wire pressing device. The wire pressing device comprises two supporting columns which are oppositely arranged in a spaced mode; the plurality of supporting plates are respectively connected between the two supporting columns; and each supporting plate is provided with a part of the multiple wire pressing assemblies, and each wire pressing assembly is used for clamping a wire rod. The supporting plates are arranged in a layered mode in the extending direction of the supporting column, and projections of the supporting plates in the extending direction of the supporting column are not overlapped. Through the arrangement, each wire rod can be clamped by adopting the wire pressing device, and a gap is reserved between every two adjacent layers of supporting plates through the supporting plates which are arranged in a layered manner, so that the wire rod passing condition and operation can be checked ...

Distribution box and electrical equipment

The embodiment of the utility model relates to the technical field of distribution boxes, in particular to a distribution box and electrical equipment, and the distribution box comprises a distribution system, a box body, a cover plate and a conductive sealing element. Wherein the box body is provided with a containing cavity, an opening communicated with the containing cavity and a wire passing hole, the power distribution system is arranged in the containing cavity, and the wire passing hole is used for a cable connected with the power distribution system to penetrate through. The cover plate is detachably connected with the box body, and the cover plate is used for closing or opening the opening. And the conductive sealing piece is arranged between the box body and the cover plate and is used for conducting and sealing the box body and the cover plate. By arranging the conductive sealing piece between the box body and the cover plate of the distribution box, the box body and the cover ...

Anti-aging composition and preparation method thereof

The invention relates to an anti-aging youth-retaining pharmaceutical composition and a preparation method thereof. The anti-aging pharmaceutical composition provided by the invention is prepared from the following raw materials: ginseng, rhizoma polygonati, radix rehmanniae, radix asparagi, poria cocos and honey. The anti-aging youth-retaining pharmaceutical composition provided by the invention can be made into any common dosage form for oral administration, has the functions of nourishing the kidneys and moistening the spleen, tonifying the spleen and replenishing qi, nourishing blood and promoting fluid production and clearing lung heat and reducing fire, and can enhance the immunological functions of human bodies, maintain the beauty and keep youth and resist fatigue and aging. The pharmaceutical composition has the advantages of obvious effect, convenience in taking, good mouthfeel and no toxic or side effect.

Tuyere bushing and mounting method thereof

The invention discloses a tuyere bushing and a mounting method thereof, belongs to the technical field of blast furnace smelting equipment, and solves the technical problems that an existing blast furnace tuyere is easy to damage and not easy to replace. The tuyere lining is arranged at the tuyere and comprises a top lining, a second lining and a door closing lining, and the top lining comprises an outer lining and a first lining which are coaxially arranged; the two second linings are oppositely arranged on the two sides of the first lining; the door closing lining is arranged between the bottom ends of the two second linings, the first lining, the two second linings and the door closing lining define a circular ring shape and abut against the inner wall of the air opening, and the upper portion of the air opening is arranged between the first outer lining and the first lining. The mounting method is used for mounting the tuyere bushing at the tuyere of the blast furnace. The tuyere can ...

Power conductor module

The invention discloses a power conductor module which comprises an outer shell upper cover, an outer shell base and a whole locating device. The outer shell upper cover and the outer shell base are arranged oppositely. The outer shell base is provided with a plurality of locating bosses. The whole locating device is arranged between the outer shell upper cover and the outer shell base. The whole locating device is provided with locating squares with the same number and positions with the locating bosses. The whole locating device and the locating bosses of the power conductor module are located in a matched mode, the fact that each chip is placed in a proper position can be guaranteed, accordingly, a machine can be used for placing the chips into the locating squares automatically, and therefore production efficiency is greatly improved.

Application of 20(R)-ginsenoside Rg3 in preparation of medicament for relieving or/and treating hepatitis B and medicament

The invention discloses new application of 20(R)-ginsenoside Rg3 in preparation of a medicament for relieving or/and treating hepatitis B. Experiments prove that 20(R)-ginsenoside Rg3 has a significant effect of treating hepatitis B, can take effect rapidly, has low toxic or side effect, is a hepatitis B treating medicament which is safe, efficient, stable and simple to prepare, and is suitable for industrialized production and easy to popularize. According to the invention, a new medicament source for preventing and treating hepatitis B and complications thereof is provided.

Structure and method for increasing power electronic packaging weld layer uniformity

The invention discloses a structure and method for increasing power electronic packaging weld layer uniformity. The structure comprises a lining plate, a substrate, a weld layer and a fulcrum array. The lining plate and the substrate are connected through the weld layer. The fulcrum array is disposed in the weld layer. The structure has the advantages that due to the fact that the fulcrum array is disposed in the weld layer, flowability of the weld layer during reflow welding can be increased effectively, the technical problem that the weld layer of existing power electronic module packaging is uneven in a large-area reflow welding process is solved, internal voidage and non-continuous welding points of the weld layer can be improved at the same time, thermal resistance of a power electronic module can be lowered, and the structure is simple in process, low in cost and high in operability.

Outdoor wiring cabinet

The utility model relates to the technical field of communication equipment, and discloses an outdoor wiring cabinet. The outdoor wiring cabinet comprises a shell, a wiring device and a wire pressing device. The shell defines a containing space and is provided with a bottom plate, a plurality of waterproof parts are installed on the bottom plate, and one end of each waterproof part is used for being inserted into the corresponding waterproof part and enters the containing space. The wiring device is installed on the shell and located in the containing space, and the wiring device is provided with a plurality of wiring ends. The wire pressing device is installed on the shell and located in the containing space, the wire pressing device is arranged between the bottom plate and the wiring device, the wire pressing device is provided with a plurality of wire pressing assemblies, and the wire pressing assemblies are used for clamping wires. Through the arrangement, each wire can be clamped by ...

Method, device and system for controlling nitrogen regulating valve of blast furnace top gearbox

The invention discloses a control method, device and system for a nitrogen regulating valve of a blast furnace top gearbox, and relates to the technical field of blast furnace ironmaking. If it is detected that the target parameter is higher than the first preset threshold value, it is represented that the air pressure in the gearbox far exceeds the requirement for preventing dust and gas in the blast furnace from entering the gearbox, the opening degree of the adjusting valve is reduced till the target parameter is lower than the first preset threshold value, waste caused by excessive nitrogen can be avoided, and pressure over-protection is avoided; if the target parameter is lower than the second preset threshold value, the air pressure in the gear box cannot meet the requirement for preventing dust and gas in the blast furnace from entering the gear box, the opening degree of the adjusting valve is increased till the target parameter is higher than the second preset threshold value, ...

Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module

The invention discloses a lead bonding-free IGBT (Insulated Gate Bipolar Translator) module, which comprises a substrate, a liner plate, a power semiconductor chip, a collector terminal and a lead-free electrode run-off plate, wherein the liner plate is welded on the substrate; the power semiconductor chip and the collector terminal are welded on the liner plate; the lead-free electrode run-off plate is a composite bus bar or a multi-layer printed circuit board, is arranged on the power semiconductor chip, and is used for realizing electrode interconnection and run-off of the power semiconductor chip and supplying current and a radiating channel for the module; electrodes of the power semiconductor chip are interconnected through a connecting terminal on the lead-free electrode run-off plate; and silver is taken as a connecting medium. According to the lead bonding-free IGBT module, lead bonding is eliminated, parasitic inductance is reduced, the reliability is enhanced, encapsulating materials ...

Application of 20 (R)-ginsenoside Rg3 to preparation of medicine for treating pharyngitis

The invention discloses new application of 20 (R)-ginsenoside Rg3 to preparation of a medicine for relieving and/or treating pharyngitis. Tests show that 20 (R)-ginsenoside Rg3 has a significant effect of treating pharyngitis, can take effect rapidly, has less side and toxic effects, is safe, efficient and stable, is simple in preparation process, can be used for preparing the medicine for treating pharyngitis, is suitable for industrial production and is easy to popularize. 20 (R)-ginsenoside Rg3 is a new source of the medicine for preventing and treating pharyngitis and complications thereof.

Method for quantitative stock level-lowering and blowing out of blast furnace

The invention discloses a method for quantitative stock level-lowering and blowing out of a blast furnace and belongs to the technical field of blast furnace iron making. The process of blowing out comprises a normal material stage and a coke stage; the normal material stage further comprises an early period and a later period during which normal materials are in the furnace; the coke stage further comprises an early period during which there is only coke in the furnace and the stock level is at the lower part of the furnace stack, a middle period during which there is only coke in the furnace and the stock level is at the furnace belly, a later period during which there is only coke in the furnace and the stock level is at the upper part of the furnace bosh or the furnace crucible, so that key tasks and quantitative principles at stages of the process of stock level-lowering and blowing out can be made clear. The method is to focus on initiative control over air quantities at different ...

A chip table top etching device

The invention discloses a chip mesa etching device, which mainly includes a spacer and a chip frame; the spacer takes a shape of round slice; the chip frame includes baffles, a locking device, a rotation device and a fixed frame; the baffles are positioned at the both sides of the chip frame, the outsides of the baffles are connected with the locking device, the locking device can inwardly extrudethe baffles, then the spacer and a chip which are arranged between the baffles can be clamped tightly by the baffles, the rotating device is sheathed at the outside of the locking device, the lockingdevice is embedded and sheathed in the side surface of the fixed frame and is connected with the side surface, the locking device and the rotation device extend to the outside from both sides of theside surface of the fixed frame. The invention eliminates the coating of a chip protective coating layer and solves the problems of complicated process procedure and the long time of the traditional method ...

Silicon carbide power module and packaging method thereof

Copper metallization structure of power semiconductor chip and manufacturing method thereof

The invention provides a copper metallization structure of a power semiconductor chip and a manufacturing method thereof. The power semiconductor chip comprises an emitting electrode/source electrode region, a grid electrode region and a collector electrode/drain electrode region, the copper metallization structure corresponding to each electrode region sequentially comprises a blocking layer, a red copper layer and a copper metallization layer. The copper metallization structure further comprises a reinforcing layer, wherein the reinforcing layer is located between the red copper layer and the copper metallization layer, or located between the red copper layer and the red copper layer or located above the copper metallization layer. The copper metallization structure can decrease the thickness of the copper metallization layer, so that reduction of the copper metallization process difficulty and cost is facilitated, and the service life and reliability of a copper lead wire bonding point ...

Shell for packaging power electronic module and power electronic module with shell

The invention discloses a shell for packaging a power electronic module and the power electronic module with the shell. The shell comprises a main frame, one or more clamping grooves formed in the main frame, and one or more insertion strips corresponding to the clamping grooves in number. Locking mechanisms are arranged on the insertion strips. Power terminals of pre-bent structures are arranged in the clamping grooves, the insertion strips are inserted into the clamping grooves or inserted into the portions, located in notches of the clamping grooves, of the main frame, and the power terminals of the pre-bent structures are fixed into the clamping grooves through the locking mechanisms of the insertion strips. By the adoption of the shell, the welding reliability of the power terminals can be effectively improved, the cost of the shell for packaging the power electronic module is reduced, the process and the implementation procedure are simple, packaging operation is convenient and quick ...

Power semiconductor device

The invention provides a power semiconductor device (1) comprising: a semiconductor substrate (2) comprising: a base layer (5) selectively disposed on a first side of the semiconductor substrate, and wherein the base layer has a first conductivity type; a collector layer (3) disposed on a second side of the semiconductor substrate, where the second side is opposite the first side, and where the collector layer has the first conductivity type; and a drift layer (4) having a second conductivity type opposite the first conductivity type wherein the drift layer (2) is arranged between the collector layer (3) and the base layer (5); an active cell (15) provided in the semiconductor substrate (2), in which the active cell (5) comprises an emitter region (7) having the second conductivity type and an active base region (5-i) as part of the base layer (5); and an insulating trench (17) arranged in the semiconductor substrate (2) and adjacent to the active cell (15), in which: the insulating trench ...

IGBT CHIP HAVING FOLDED COMPOSITE GATE STRUCTURE

An IGBT chip having a Γ-shape mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a gate region and two active regions located at two sides of the gate region. The gate region includes a trench gate and a planar gate that is located on a surface of the gate region, and the planar gate is connected with the trench gate and formed a Γ-shape mixed structure. In this way, the IGBT chip can have a significantly improved chip density, while retaining features of low power consumption and high current density of the trench gate and a feature of a wide safe operating area of the planar gate. 1. An IGBT chip having a Γ-shape mixed gate structure , comprising a wafer substrate and a plurality of mixed gate units arranged sequentially which are formed on a front surface of the wafer substrate , wherein each of the mixed gate units comprises a gate region and two active regions located at two sides of the gate region , a trench gate disposed in a trench which is formed by etching downward at a designated position of the gate region;', 'a planar gate located on a surface of the gate region, wherein the planar gate is connected with the trench gate;', 'a gate oxidation layer which separates the trench gate and the planar gate from the wafer substrate; and', 'a passivation layer which covers an external surface of the planar gate; and, 'wherein the gate region comprises{'sup': +', '+, 'wherein the active regions comprise a trench gate active region and a planar gate active region which are located at two sides of the gate region respectively, wherein each of the trench gate active region and the planar gate active region comprises an N well region, a P well region, a P doped region and an N doped diffusion region, which are distributed from bottom to top.'}2. The IGBT chip according to claim 1 , wherein the planar gate and the trench gate are both made of polycrystalline silicon claim 1 , and the polycrystalline silicon of the ...

Power semiconductor module

The invention provides a power semiconductor module. The power semiconductor module comprises a metal plate, power semiconductor chips and an electrode outgoing chip in sequence from top to bottom, wherein the metal plate is used to bear the power semiconductor chips and provide a current path for the power semiconductor chips; the electrode outgoing chip is a composite busbar or a multilayer PCB (printed circuit board), a connecting terminal is arranged on the electrode outgoing chip and is used for being connected with the power semiconductor chips so as to realize the interconnection among the power semiconductor chips. The power semiconductor module provided by the invention is a pressure-welding type packaging structure, a chip is directly arranged on the metal plate and then directly presses the surfaces of the power semiconductor chips through the electrode outgoing chip, thus the interconnection among the chips can be realized, the packaging process can be simplified and the reliability ...

Potentilla anserina extract food as well as processing technique and uses thereof

The invention relates to petentilla anserina extract food, a processing technique and application thereof, and belongs to the field of food processing. The processing technique comprises the following steps: using petentilla anserina as a raw material, extracting the petentilla anserina by organic solvent and water respectively, and then drying the residue to obtain petentilla anserina extract food. The extract food has functions of reducing blood fat and losing weight, can be used as a raw material for preparing food and health-care food, and can be further added or not added with food additive to prepare the food such as tablet, capsule, granule, tea, pill, candy, and the like.

Quantification blow-in method for blast furnace

A quantification blow-in method for a blast furnace belongs to the technical field of blast furnace iron making. The blow-in process is divided into three phases, namely, a phase of forming a cohesive zone, a phase of taping adaptation, and a phase of mine batch and heavier load. Control standards for the phases and parameters of the blow-in process of the blast furnace are quantified, therefore,important jobs and quantification principles of the respective phase in the blow-in process can be defined. With a wind-adding curve as a core and in combination with actual conditions of blast furnace blow-in, the quantification blow-in technology details the parameters of the blow-in process; in addition, the practice of the technology in the blast furnace also shows that main parameters in theactual blow-in process conforms to the plan, and the blow-in process is smooth and high efficient, which lays the foundation for the quick improvement of economic technological indexes after the blow-in.

Integrative energy-saving and decorative corner protector

The invention provides an integrative energy-saving and decorative corner protector, which comprises a main body with a right angle. The cross section of the main body comprises an insulating layer, a reinforcement layer and a decorative layer which are connected in sequence. The cross section of the main body with the right angle comprises the insulating layer, the reinforcement layer and the decorative layer which are connected in sequence. The corner protector can be directly fixed at the yin and yang corners of doors, windows and the like of a building, with heat preservation and decorative effect. Furthermore, the corner protector can protect the yin and yang corners of the building. Integrated with heat preservation, decoration and corner protection, the corner protector is convenient for transportation and has simple installation and wide application range.

Control method for quickly starting coal pulverizing system

The invention discloses a control method for quickly starting a coal pulverizing system. Manual participation is still needed in the actual work starting process, the whole starting process lasts too long, and the requirement for peak regulation of a unit cannot be met. The method comprises the following steps: judging an automatic starting condition of the coal mill; when the automatic starting condition of the coal mill is met, activating a sequence control function block in a DCS (Distributed Control System), and triggering a starting instruction; after the coal mill automatic starting instruction is executed and fed back, a cold air control valve is opened, the fourth step is executed after starting succeeds, and the third step is stopped after starting fails; a hot air control valve is opened, a coal mill separator motor is started, the fifth step is executed after feedback conditions are met, and the fourth step is stopped if feedback conditions are not met; starting the coal mill ...

Whirl etching system and method for large area silicon chips

The invention discloses a whirl etching system for large-area silicon chip and a method thereof, comprising an autorotation etch fixture, a revolution arm, an etch bath, a de-ionized water rinse bath, a bubbling agitating device, a condensing and temperature control device; the etch fixture is installed on the arm for uniform autorotation driven by a rotating motor; the etch bath contains chemical corrosive liquid; the bubbling agitating device is located at bottom of the bath; the condenser pipe and the temperature control thermoelectric couple are installed at side wall of the etch bath; the de-ionized water rinse bath is located adjacent to the etch bath; when etching the silicon chip, the arm drives autorotation fixture into dip into the chemical corrosive liquid in the etch bath, while the arm undergoes uniform revolution; after that, the autorotation fixture driven by the arm is dipped into the de-ionized water rinse bath for cleaning; controlling the temperature of the corrosive ...

IGBT (insulated gate bipolar transistor) module encapsulating and welding structure

The invention discloses an IGBT (insulated gate bipolar transistor) module encapsulating and welding structure which comprises a substrate, a lining plate, a chip and a busbar, wherein the upper surfaces of the substrate and the lining plate are coated with welding fluxes or provided with welding lugs; the substrate and the lining plate, the lining plate and the chip and the busbar and the lining plate are respectively connected through multiple metal supporting columns. The metal supporting columns which are 0-5mm thick are manufactured on a metal layer on the front surface of the lining plate and a welding region on the front surface of the substrate and are used for supporting the chip and the lining plate, so that the welding fluxes can uniformly flow after being melted to fill clearances, and the thickness and the uniformity of a welding layer are controlled; the metal supporting columns can be used for fixing the welding lugs with through holes, and sliding and drifting of the welding ...

Power device

The invention provides a power device. The power device comprises chips, two electrodes, molybdenum plate sets, a ceramic package and short circuit structures. Each short circuit structure comprises a compressed metal spring, a sleeve arranged on the outer side of the metal spring in a sleeving mode and low-melting-point alloy packaging the metal spring inside the sleeve. The short circuit structures are arranged between the two electrodes. One end of each short circuit structure is connected with the inner side, close to the other electrode, of one electrode, and the other end of each short circuit structure is close to the inner side of the other electrode. When the metal springs are in a relaxed state, the two ends of the metal springs make contact with the inner sides of the two electrodes respectively. By the adoption of the short circuit structures, when the power device has a short circuit and emits heat, the low-melting-point alloy is melt, the metal springs restore the relaxed ...

Synchronous forming device for tubular core mould

The invention relates to a synchronous forming device for a tubular core mould, which comprises a motor and at least two parallel rotating cylinder supports. Rotating cylinders are arranged on the rotating cylinder supports respectively, and two ends of each rotating cylinder are provided with transmission shafts. The synchronous forming device is characterized in that the motor is connected with a transmission shaft of one rotating cylinder by a drive mechanism, and the rotating cylinder is connected with the adjacent rotating cylinder through a connecting piece or a coupling. The synchronous forming device has advantages of simple structure, convenient operation, and stable running; and one motor drives one rotating cylinder to work, every two adjacent rotating cylinders are connected with each other by the connecting piece or the coupling, then a plurality of rotating cylinders can rotate synchronously, so a plurality of cement thin wall pipes can be processed and formed simultaneously ...

Supercritical once-through boiler main steam temperature control method based on double-loop fuzzy PID

The invention discloses a supercritical once-through boiler main steam temperature control method based on double-loop fuzzy PID. According to a traditional double-loop cascade PID control method, due to factors such as various boiler models, combustor arrangement, difference between designed coal types and actual coal types and the like, main steam temperature adjustment is not timely, the fluctuation range is large, the boiler combustion heat efficiency and power generation coal consumption are reduced, and meanwhile the risk of pipe wall overtemperature exists. According to the method, for a supercritical once-through boiler of a first-stage regenerative system, desuperheating water is arranged at an inlet of a last-stage superheater to control the main steam temperature of an outlet of a platen superheater, the desuperheating water uses an electric adjusting device, a double-loop cascade PID controller is introduced, a fuzzy system is established, precise main and auxiliary loop fuzzy ...

Test system

The invention discloses a testing system, and belongs to the technical field of testing. The testing system comprises a temperature control unit, a pressure regulating unit and a rectifying air duct, the temperature control unit and the pressure regulating unit are connected to the two opposite ends of the rectifying air duct respectively, the rectifying air duct is used for containing a to-be-tested product, the temperature control unit can control the temperature of air flowing through the to-be-tested product, and the pressure regulating unit is used for regulating the back pressure of the to-be-tested product; the temperature control unit comprises a temperature control cavity, an air inlet is formed in the temperature control cavity, and the temperature control cavity communicates with the rectification air duct; the pressure regulating unit comprises a pressure regulating cavity, the pressure regulating cavity communicates with the rectifying air channel, and an air outlet is formed ...

Potentilla anserina extract food as well as processing technique and uses thereof

The invention relates to petentilla anserina extract food, a processing technique and application thereof, and belongs to the field of food processing. The processing technique comprises the following steps: using petentilla anserina as a raw material, extracting the petentilla anserina by organic solvent and water respectively, and then drying the residue to obtain petentilla anserina extract food. The extract food has functions of reducing blood fat and losing weight, can be used as a raw material for preparing food and health-care food, and can be further added or not added with food additive to prepare the food such as tablet, capsule, granule, tea, pill, candy, and the like.

Crimp type insulated gate bipolar transistor

The invention relates to a crimp type insulated gate bipolar transistor. The crimp type insulated gate bipolar transistor comprises a shell, and an emitter, a circuit board, a module locating piece, a molybdenum plate and a collector which are arranged in the shell along a first direction in sequence, wherein a plurality of locating holes are formed in the module locating piece, a molybdenum block, a chip and a locating bulge which is fixedly arranged on the surface of the molybdenum plate and is made of a molybdenum material are arranged in each locating hole along the first direction in sequence, and electric connection components used for connecting the corresponding chips and the circuit board are arranged in the molybdenum blocks in some locating holes. According to the crimp type insulated gate bipolar transistor, a chip mounter is adopted to assemble successfully, so that stop finishing is avoided, and thus the production efficiency of enterprises is improved.

Silicon carbide power module and packaging method thereof

The invention relates to a packaging method of a silicon carbide power module. The packaging method comprises the following steps of: welding an aluminum nitride isolation layer on a molybdenum plate, placing a silicon carbide chip in a blank of the aluminum nitride isolation layer, and welding the silicon carbide chip with the molybdenum plate; welding a molybdenum block on the silicon carbide chip, and reserving a gate electrode lead slot on the molybdenum block; placing a lead in the gate electrode lead slot, arranging a compression ring on the lead, placing a spring used for crimping in the compression ring, and collecting and leading out the lead; and carrying out integral casting forming on the molybdenum plate, the silicon carbide isolation layer and the silicon carbide chip through using epoxy resin, installing a base, a tube shell and a tube cap, and packaging. The invention also discloses a silicon carbide power module. The invention ensures that the silicon carbide power module ...

Machining tool for machining end part center hole and milling end face of shaft

The invention provides a machining tool for machining an end part center hole and milling an end face of a shaft. The machining tool comprises a stand, wherein a slide rail is arranged on a working face of the stand. The machining tool is characterized in that shaft fixing devices are arranged in the middle of the slide rail, and a shaft end part drilling and face milling device is arranged at the two ends of the slide rail. The shaft end drilling and end face milling device comprises driving motors arranged at the two ends of the slide rail respectively, wherein cross slides are arranged at the lower parts of the driving motors and connected with the slide rail; and a shaft end part drilling and face milling cutter is arranged at an output end of each driving motor. The tool has the benefits that the machining tool has the advantages of simple structure, convenience in use, high machining precision and low manufacturing cost in machining shaft workpieces.

Semiconductor device capable of integrating IGBT (Insulated Gate Bipolar Transistor) and FRD (Fast Recovery Diode) by single chip

The invention relates to a semiconductor device which integrates all IGBT (Insulated Gate Bipolar Transistor) and FRD (Fast Recovery Diode) chips required by packaging the IGBT modules on one wafer, and the IGBT and the FRD are connected in parallel; the edge part of the wafer is a multi-stage field limiting ring region, and the middle is provided with an IGBT region and an FRD region; the IGBT and the FRD are positioned on the same N-type substrate and have the terminal structure of the multi-stage field limiting ring; the IGBT is formed by successively injecting an emitting electrode P trap, an emitting electrode ohmic contact P+ region, a horizontal MOSFEF (Metal-Oxide-Semiconductor Field-Effect Transistor) N+ source electrode region and a back collector P+ region on the substrate; theFRD is formed by injecting an anode P trap and a cathode N+ on a silicon substrate; and the terminal structure of the multi-stage field limiting ring is formed by injecting a plurality of P traps andone ...

Integrative energy-saving and decorative corner protector

The invention provides an integrative energy-saving and decorative corner protector, which comprises a main body with a right angle. The cross section of the main body comprises an insulating layer, areinforcement layer and a decorative layer which are connected in sequence. The cross section of the main body with the right angle comprises the insulating layer, the reinforcement layer and the decorative layer which are connected in sequence. The corner protector can be directly fixed at the yin and yang corners of doors, windows and the like of a building, with heat preservation and decorative effect. Furthermore, the corner protector can protect the yin and yang corners of the building. Integrated with heat preservation, decoration and corner protection, the corner protector is convenient for transportation and has simple installation and wide application range.

Angle lapping device for silicon chip edge

The present invention relates to a bevelling device of the edge of a silicon chip. The present invention comprises a wheelhead and an abrading disk; the lower surface of the wheelhead is of a circular plane, and a vacuum pipeline arranged in the wheelhead can absorb the silicon chip on the outer layer of the lower circular surface of the wheelhead; the wheelhead also comprises a magnet layer and a cushioning layer, and the magnet layer and the abrading disk generate magnetic attraction which ensures that the silicon chip is uniformly stressed; the cushioning layer ensures that the silicon chip and the wheelhead are tightly combined together and not injured by collision. The upper surface of the abrading disk is provided with a concave surface, in the process of bevelling, the silicon ship is absorbed by the wheelhead to be contacted with the concave surface of the abrading disk, the wheelhead and the abrading disk relatively rotate, and meanwhile, the edge of the silicon chip is bevelled ...

Ceramic lining plate

The invention discloses a ceramic lining plate. The ceramic lining plate comprises a ceramic layer and metal layers arranged on the upper surface and the lower surface of the ceramic layer; at least one of the upper surface and the lower surface of the ceramic layer is provided with scattered electric field structures used for concentrating scattered electric fields. The scattered electric field structures are arranged on the two outer sides of the part, not covered with the metal layers, of the ceramic layer, and the scattered electric field structures on the two sides are distributed in an axial symmetry mode. By means of the ceramic lining plate, the scattered electric fields can be better concentrated, and therefore the insulation performance can be better.

Trench gate igbt

Disclosed is a trench gate IGBT. A dummy gate is arranged between two real gates. An emitter metal is in contact with the dummy gate, so that an emitter metal contact area is not limited to an area between trenches. The emitter metal contact area includes an area where the emitter metal is in contact with the dummy gate, thereby enlarging the emitter metal contact area, and accordingly reducing a distance between each of the real gates and the dummy gate. Consequently, the distance between each of the real gates and the dummy gate is no longer affected by a minimum emitter contact area, and a turn-on voltage drop of the trench gate IGBT can be greatly reduced.

Insulated gate bipolar transistor and preparation method therefor

Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Power semiconductor device

There is provided a power semiconductor device 1, comprising: a semiconductor substrate 2 comprising: a base layer 5 selectively provided at a first side of the semiconductor substrate, and wherein the base layer has a first conductivity type; a collector layer 3 provided at a second side of the semiconductor substrate, wherein the second side is opposite to the first side, and wherein the collector layer has the first conductivity type; and a drift layer 4 having a second conductivity type opposite to the first conductivity type, wherein the drift layer is arranged between the collector layer 3 and the base layer 5; an active cell 15 provided in the semiconductor substrate 2, wherein the active cell 15 comprises an emitter region 7 which has the second conductivity type, an active base region 5-i which is a part of the base layer 5, an active gate trench 9 comprising a gate insulator 11 and an active gate electrode 10 disposed therein, and wherein the active gate trench 9 is configured to extend from a surface 16 of the semiconductor substrate 2 at the first side into the drift layer 4 along a first direction Y; and an insulation trench 17 provided in the substrate 2 and neighbouring the active cell 15, wherein the insulation trench 17 is filled with a dielectric material, wherein the active cell 15 has a first length L1 along a second direction X perpendicular to the first direction Y, and the insulation trench 17 has a second length L2 along the second direction X, and the first and second lengths L1 and L2 satisfy the relationship of 0.5 ≤ L2/L 1 ≤ 2.

IGBT chip having folded composite gate structure

An IGBT chip having a Γ-shape mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a gate region and two active regions located at two sides of the gate region. The gate region includes a trench gate and a planar gate that is located on a surface of the gate region, and the planar gate is connected with the trench gate and formed a Γ-shape mixed structure. In this way, the IGBT chip can have a significantly improved chip density, while retaining features of low power consumption and high current density of the trench gate and a feature of a wide safe operating area of the planar gate.

3clpro-targeting phillyrin, derivative thereof, and use thereof against novel coronavirus

Disclosed are phillyrin that targets the 3CLpro protein, which inhibits the COVID-19 virus, a derivative thereof, and the use of a composition of phillyrin and phylligenin in the preparation of a drug for resisting a coronavirus or treating a disease caused by a coronavirus, wherein the coronavirus is the COVID-19 virus and the disease caused by a coronavirus is COVID-19.

Power semiconductor device

There is provided a power semiconductor device ( 1 ), comprising: a semiconductor substrate ( 2 ) comprising: a base layer ( 5 ) selectively provided at a first side of the semiconductor substrate, and wherein the base layer has a first conductivity type; a collector layer ( 3 ) provided at a second side of the semiconductor substrate, wherein the second side is opposite to the first side, and wherein the collector layer has the first conductivity type; and a drift layer ( 4 ) having a second conductivity type opposite to the first conductivity type, wherein the drift layer ( 4 ) is arranged between the collector layer ( 3 ) and the base layer ( 5 ); an active cell ( 15 ) provided in the semiconductor substrate ( 2 ), wherein the active cell ( 15 ) comprises an emitter region ( 7 ) which has the second conductivity type and an active base region ( 5 - i ) which is a part of the base layer ( 5 ); and an insulation trench ( 17 ) provided in the semiconductor substrate ( 2 ) and neighbouring the active cell ( 15 ), wherein: the insulation trench ( 17 ) extends from a surface ( 16 ) of the semiconductor substrate ( 2 ) at the first side into the drift layer ( 4 ) along a first direction; the insulation trench ( 17 ) comprises a gate electrode ( 9 ) and a dielectric material ( 11, 10 ) disposed therein; and the gate electrode ( 9 ) is configured to control an on/off status of a current channel within the active cell ( 15 ); wherein the active cell ( 15 ) has a first length L 1 along a second direction X perpendicular to the first direction Y, and the insulation trench ( 17 ) has a second length L 2 along the second direction X, and the first and second lengths L 1 and L 2 satisfy the relationship of 0.5≤L 2 /L 1≤2.

Uso de forsitina e/ou seus derivados, método para a inibição da proteína 3clpro do vírus covid-19, uso de composição de forsitina/forsitosídeo, métodos para uso contra o vírus covid-19 ou para o tratamento de doenças causadas pelo vírus covid-19, composição de forsitina/forsitosídeo e medicamento compreendendo uma composição de forsitina/forsitosídeo

USO DE FORSITINA E/OU SEUS DERIVADOS, MÉTODO PARA A INIBIÇÃO DA PROTEÍNA 3CLpro DO VÍRUS COVID-19, USO DE COMPOSIÇÃO DE FORSITINA/FORSITOSÍDEO, MÉTODOS PARA USO CONTRA O VÍRUS COVID-19 OU PARA O TRATAMENTO DE DOENÇAS CAUSADAS PELO VÍRUS COVID-19, COMPOSIÇÃO DE FORSITINA/ FORSITOSÍDEO E MEDICAMENTO COMPREENDENDO UMA COMPOSIÇÃO DE FORSITINA/FORSITOSÍDEO. A presente invenção prevê o uso de uma composição de forsitina/forsitosídeo, que tem como alvo e inibe a proteína 3CLpro do vírus COVID-19, na fabricação de um medicamento anticoronavírus ou para o tratamento de doenças causadas por coronavírus. Em que o coronavírus é o vírus COVID-19 e a doença causada pelo coronavírus é a COVID-19.

3clpro-targeting phillyrin, derivative thereof, and use thereof against novel coronavirus

The present invention provides a use of a phillyrin/phillygenin composition which targets and inhibits 3CLpro protein of COVID-19 virus, in preparation of an anti-coronavirus drug or a drug for treating a disease caused by the coronavirus, wherein the coronavirus is COVID-19 virus, and the disease caused by the coronavirus is COVID-19.

3clpro-targeting phillyrin, derivative thereof, and use thereof against novel coronavirus

3clpro-targeting phillyrin, derivative thereof, and use thereof against novel coronavirus

The present invention provides a use of a phillyrin/phillygenin composition which targets and inhibits 3CLpro protein of COVID-19 virus, in preparation of an anti-coronavirus drug or a drug for treating a disease caused by the coronavirus, wherein the coronavirus is COVID-19 virus, and the disease caused by the coronavirus is COVID-19.

3clpro-targeting phillyrin, derivative thereof, and use thereof against novel coronavirus

Disclosed are phillyrin that targets the 3CLpro protein, which inhibits the COVID-19 virus, a derivative thereof, and the use of a composition of phillyrin and phylligenin in the preparation of a drug for resisting a coronavirus or treating a disease caused by a coronavirus, wherein the coronavirus is the COVID-19 virus and the disease caused by a coronavirus is COVID-19.

In-situ monitoring method and apparatus for power electronic device explosion

The present invention discloses an in-situ monitoring method and apparatus for a power electronic device explosion. A power electronic device is excited to produce an explosion failure by using a fault excitation module. An electrical signal of the power electronic device is monitored in real time by using an electrical signal monitoring module. Gas information of a test cavity is monitored in real time by using a gas monitoring module. External pictures of the power electronic device are captured by using a high-speed image capturing module. Internal pictures of the power electronic device are captured by using a high-speed X-ray imaging module. Each module in the apparatus is triggered to work according to a predetermined time sequence and time interval by using a time sequence control module. The entire apparatus is controlled and data is acquired, stored, and displayed by using a main control module.

High power density 3D semiconductor module packaging

We herein describe a semiconductor device sub-assembly comprising at least two power semiconductor devices and a contact of a first type. A first power semiconductor device is located on a first side of the contact of a first type, and a second power semiconductor device is located on a second side of the contact of a first type, where the second side is opposite to the first side.

In-situ monitoring method and apparatus for power electronic device explosion

The present invention discloses an in-situ monitoring method and apparatus for a power electronic device explosion. A power electronic device is excited to produce an explosion failure by using a fault excitation module. An electrical signal of the power electronic device is monitored in real time by using an electrical signal monitoring module. Gas information of a test cavity is monitored in real time by using a gas monitoring module. External pictures of the power electronic device are captured by using a high-speed image capturing module. Internal pictures of the power electronic device are captured by using a high-speed X-ray imaging module. Each module in the apparatus is triggered to work according to a predetermined time sequence and time interval by using a time sequence control module. The entire apparatus is controlled and data is acquired, stored, and displayed by using a main control module.