Rotary chain conveyor

The invention relates to the technical field of logistic storage conveying equipment, in particular to a rotary chain conveyor. The rotary chain conveyor comprises the chain conveyor, a rotary frame and an annular railway. The chain conveyor is horizontally arranged on the rotary frame. The rotary frame is rotatably arranged on the annular railway. During rotating of the rotary frame, the chain conveyor is driven to rotate around the annular railway which serves as the center. According to the rotary chain conveyor, the rotary chain conveyor is usually arranged on the corner portion of a conveying line, changing of the conveying direction of a pallet load leftwards and rightwards at an angle of 90 degrees without the altitude difference is achieved. Meanwhile, the direction of a pallet is changed, the process of the conveying line is achieved, the occupied space is reduced, the automation degree of the storage conveying equipment is improved, and the logistic efficiency is guaranteed.

Novel silicon carbide MOSFET and manufacturing method thereof

The invention provides a novel silicon carbide MOSFET and a manufacturing method thereof. According to the manufacturing method provided by the invention, after P trap ions are injected in a silicon carbide MOSFET device, a P-epitaxial layer with relatively low surface roughness extends on the surface of a P trap, and carriers are transported in an inversion channel of the P-epitaxial layer; as the roughness of the P-epitaxial layer is smaller than that of the surface of the P trap, the probability that the carriers impact with one another or are subjected to scattering in the inversion channel is lowered, the mobility of the carriers in the inversion channel of the silicon carbide MOSFET device is improved, and the on-resistance of the silicon carbide MOSFET device is lowered.

Sound source three-dimensional positioning method and device

The invention belongs to the technical field of sound source positioning, and discloses a sound source three-dimensional positioning method and device, and the method comprises the steps: placing a microphone on each of positive and negative half axes of an x axis, a y axis and a z axis of a three-dimensional space rectangular coordinate system, and enabling the distances between the microphones and the original point of the coordinate system to be equal; the sound source three-dimensional positioning method comprises the steps that when a sound source enters a microphone array and is received by the microphone array, the time difference of signals received by microphones is obtained; obtaining a pitch angle and an azimuth angle from the sound source to the single microphone array positioning equipment according to the signal time difference; obtaining a linear equation according to the pitch angle and the azimuth angle from the sound source to each microphone array; and obtaining the position ...

Capacitor high-temperature welding reliability test method

The invention discloses a high-temperature welding reliability test method for a capacitor. The test device comprises a base, a mounting seat for mounting a capacitor to be tested, a heating mechanism arranged in the mounting seat and used for heating the capacitor to be tested, and a linear reciprocating mechanism arranged on the base and connected with the mounting seat to drive the mounting seat to move back and forth, the angle adjusting mechanism is arranged on the base, connected with the linear reciprocating mechanism and used for driving the mounting seat to slide left and right back and forth in the direction perpendicular to the moving direction of the mounting seat so as to adjust the inclination angle of the mounting seat; the fan set is arranged on the base and is positioned above the mounting seat; the visual feedback mechanism is arranged on the mounting seat and is opposite to the capacitor to be tested; according to the application, the structure of the test device is limited ...

Hazardous waste collecting and transferring system for waste production enterprises

The invention relates to the field of dangerous solid waste treatment, in particular to a waste production enterprise dangerous waste collecting and transferring system which comprises a small-amount dangerous waste intelligent device, a cloud App and a block chain, the small-amount dangerous waste intelligent device comprises a weighing system, a controller and a mobile phone App, the weighing system comprises a bearing device and a weight sensor, and the weight sensor is connected with the cloud App. The weight sensor is electrically connected with the controller, and the controller is in network communication with the mobile phone terminal App and the cloud terminal App; the small-amount hazardous waste intelligent equipment has an information configuration function; the cloud App communicates with a waste production enterprise, a collection enterprise, a transportation enterprise and a supervision department through a network, performs unified scheduling, and stores data in a block ...

Production device and method of non-encapsulation lead ceramic capacitor

The invention provides a production device and method of a non-encapsulation lead ceramic capacitor. The production device comprises a welding jig set, turnover jigs, a cleaning mechanism, a rib cutting mechanism and a tin coating mechanism. The welding jig set comprises a plurality of welding jigs. Each welding jig is provided with a limiting groove, two clamping mechanisms and two pressing mechanisms, wherein the two clamping mechanisms can enable the free ends of an initial lead placed in first lead grooves to be clamped and fixed to the two sides of a chip, and the pressing mechanisms are pressed on the welding jigs to prevent the initial lead from being disengaged upwards. The turnover jigs are used for clamping the non-free ends of the initial leads so as to facilitate welding. The cleaning mechanism comprises a cleaning support which can be used for hanging the plurality of turnover jigs so as to enable the chips to be suspended and cleaned, the turnover jigs contain part of the ...

Self-washing type non-ferro metals debris reclaimer and its using method

The invention discloses a self-piercing type nonferrous metal tailing recovery device. The invention is characterized in that the recovery device comprises an impact bin, a separation bin, and a surge bin; the impact bin, the separation bin, and the surge bin are connected into an integral structure in sequence; a water inlet opening used for tailing slurry to flow into is arranged on the impact bin; an impact gate plate is arranged between the impact bin and the separation bin, and an adjustment gate plate is arranged between the separation bin and the surge bin; a water outlet opening is arranged on a panel at one side of the surge bin opposite to the adjustment gate plate; an overflow opening used for mineralized froth to flow out is arranged on the panel at one side of the separation bin and is adjacent to the impact gate plate. The self-piercing type nonferrous metal tailing recovery device provided by the invention has the advantages of high recovery ratio, no energy consumption, ...

Junction barrier schottky diode and manufacturing method thereof

The invention discloses a junction barrier schottky diode and a manufacturing method of the junction barrier schottky diode. The junction barrier schottky diode comprises an active area formed by an N-type semiconductor, and a P-type doped area of a break point annular structure is arranged in the active area. According to the junction barrier schottky diode and the manufacturing method of the junction barrier schottky diode, the P-type doped area of the break point annular structure is adopted, and the current effective conduction area of a device can be increased on the premise of making full use of the extending capacity of a depletion layer (in a reverse blocking mode) in the three-dimensional direction. Under the condition of the same area of the active area, the novel structure and distribution can improve the performance of the device, and under the same current level, the area of a chip of the novel structure device is smaller, so that the area of the chip is effectively reduced ...

Power device junction terminal structure and manufacturing method thereof

The invention relates to a power device junction terminal structure and a manufacturing method thereof. The power device junction terminal structure includes: field limiting rings, which are arranged at the outer side of an outermost main junction at intervals; and charge compensation zones, which are formed at an epitaxial layer at intervals by a doping way and penetrate a metallurgical junction plane, approaching the outer side, of the outermost main junction and metallurgical junction planes, approaching the outer side, of the field limiting rings. The conduction types of the charge compensation zones are identical with those of the field limiting rings. The provided power device junction terminal structure has advantages of good voltage endurance capability and high reliability.

Film capacitor metal spraying device

The invention discloses a film capacitor metal spraying device, and relates to the technical field of capacitor processing, the film capacitor metal spraying device comprises a processing box, a material storage assembly and an exhaust pipe assembly, the outer wall of the processing box is movably connected with a box door through a hinge, an air inlet window is embedded in the left side wall of the processing box, and a driving box is fixedly installed in the processing box; the top of the driving box is movably connected with a shaft seat, and meanwhile the outer wall of the shaft seat is fixedly connected with a machining table. According to the metal spraying device for the thin-film capacitor, the air extraction effect on the air in the processing box is good, the air extraction position is not fixed and can move uniformly, so that the air in the processing box can be extracted uniformly, floating gold powder near the processing position can be extracted well along with the air by ...

Gas-liquid mixing device for preparing composite antistatic agent

The gas-liquid mixing device comprises a mixing tank, a liquid inlet pipe is arranged on the outer wall of the mixing tank, a driving motor is arranged at the bottom of the mixing tank, a stirring rod is arranged on the inner wall of the mixing tank, and an exhaust pipe is arranged on the outer wall of an exhaust pipe. A circulating assembly is arranged on the outer wall of the mixing tank, the circulating assembly comprises a filter box, filter plates and a sucking pump, the filter box is arranged on the inner wall of the circulating assembly, and the filter plates are symmetrically arranged on the inner wall of the filter box. According to the gas-liquid mixing device for preparing the composite antistatic agent, by installing the circulating assembly, unmixed gas in the gas-liquid mixing device for preparing the composite antistatic agent can flow circularly and be mixed conveniently, waste of the mixed gas is avoided, an air extracting pump works to extract the gas which is not mixed ...

Instant noodle oil level separator

The utility model provides an instant noodle oil level separator, includes the frame, frame top be equipped with the charging tray, charging tray one side be equipped with the discharge gate, and oneside of discharge gate is equipped with and scrapes the flitch, the charging tray lower extreme be provided with the chain, and the charging tray connects through the chain and is equipped with powerunit, the discharge gate under be equipped with the feed inlet, and the feed inlet has a screw extrusion device through the pipe connection, screw extrusion device outside be equipped with the flitch,and the flitch has a plurality ofly, a plurality of flitchs pass through bolted connection parcel in the outside of screw extrusion device, the junction of flitch and flitch is equipped with oil outlet groove, oil outlet groove be equipped with the oil -out through the pipe connection, the oil -out be located the front side of frame, the outside parcel of flitch be equipped with heating device. This ...

Silicon carbide MOSFET device and method for manufacturing the same

A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed.

C-shaped guide vehicle device for stack material carrying and operation method of C-shaped guide vehicle device

A C-shaped guide vehicle device for stack material carrying belongs to the technical field of stack material carrying and comprises a machine body, a lifting assembly is arranged on the machine body, a forking device is arranged at the bottom of the front side of the machine body, and the lifting assembly is connected with the forking device so as to drive the forking device to move up and down; a C-shaped part is arranged at the bottom of the front side of the machine body and forms a space capable of enveloping the material containing workbench; a moving assembly capable of rotating universally is arranged at the bottom of the machine body, and the machine body can be steered in situ through the moving assembly. An operation method of the device comprises the following steps that a, the material frame is placed on the material containing workbench, and then a stack of stamping plate materials is placed on the material frame; b) starting the guide vehicle, and after the C-shaped part of ...

Morphology registration analysis-based method for detecting precision of precise main shaft rotation

The invention provides a morphology registration analysis-based method for detecting precision of precise main shaft rotation. A surface sample is installed on a to-be-detected precise main shaft; a control system controls the to-be-detected precise main shaft to be at a position at an angle theta; surface morphology graphs of the surface sample are collected in order, wherein the surface morphology graphs are obtained when the to-be-detected precise main shaft at complete circumference positions. A morphology data registration analysis processing system analyzes the plurality of surface morphology graphs and error evaluation is simultaneously carried out. According to the invention, a morphology of a surface sample that makes rotation with a precise main shaft is measured and subsequent morphology registration is analyzed and processed; there is no high precision requirement on the surface sample; and an expensive standard external circle profile or a complex testing system and a testing ...

Method for packaging silicon carbide power device

The invention relates to a method for packaging a silicon carbide power device. In the method, copper-clad aluminum nitride is selected as a material of a lining plate; a layer of molybdenum sheet serving as a welding surface is arranged on the lining plate; and nickel-plated aluminum-based silicon carbide is selected as a material of a substrate. The method comprises the following steps of: welding an aluminum-based silicon carbide chip on the welding surface of the lining plate and welding the lining plate on the substrate; welding one end of a lead with an electrode of the silicon carbide chip and welding the other end of the lead with an electrode of the lining plate; and welding a power wiring terminal on the electrode of the lining plate; and mounting a tube shell, filling a heat expansion buffer layer and a sealant and mounting a tube cap. According to the method, the service temperature of the silicon carbide power device can be effectively improved.

Large current silicone carbide SBD / JBS power chip structure and manufacturing method thereof

The invention discloses a large current silicone carbide SBD / JBS power chip structure and a manufacturing method thereof. The structure comprises good elements and bad elements, and the good elements and the bad elements are sealed in a pressure welding mode between a copper cover and a copper bottom. The copper cover is buckled with an anode of a metal contact layer of the good element through a first molybdenum piece and the copper bottom is buckled with the cathode of the good element through a second molybdenum piece, so that all the good elements are in parallel connecting state. The manufacturing method is used for manufacturing the power chip structure. The large current silicone carbide SBD / JBS power chip structure and the manufacturing method thereof have the advantages that manufacturing is convenient, no deposition insulation layers exist, and appliance performance can be improved.

Method for welding silicon wafer and molybdenum piece in semiconductor device and application of silicon wafer and molybdenum piece

The invention discloses a method for welding a silicon wafer and a molybdenum piece in a semiconductor device. The method comprises the following steps that firstly, a first silver layer is arranged on the molybdenum piece; secondly, a second silver layer is arranged on the anode electrode of the silicon wafer; thirdly, a third silver layer is arranged between the first silver layer and the second silver layer; fourthly, the silicon wafer and the molybdenum piece are welded together by welding the first silver layer, the second silver layer and the third silver layer. According to the method, the technology is simple, the yield and the welding strength are high, the voidage of welding layers is low, the deformation is small, and the performance of the product can be greatly improved. The invention further relates to an application of the silicon wafer/molybdenum piece manufactured through the method.

Device and method for judging camber of power semiconductor module base plate

The invention discloses a device and a method for judging the camber of a power semiconductor module base plate. The device comprises a measuring module, a processing module and a display module, wherein the measuring module carries out point taking operation on the surface of the power semiconductor module base plate, more than three measuring points are measured and taken on the surface of the power semiconductor module base plate, and in addition, space position data of the measuring points is transmitted to the processing module; the processing module carries out calculation and processing according to the space position data of the measuring points to obtain the space position data of a reference surface, further obtains and outputs difference value data of the space position data of the surface and the reference surface of the power semiconductor module base plate to the display module, outputs the planeness data, calculates the highest point position data of the base plate, and judges ...

Automobile navigation apparatus and navigation system using the same

The invention provides a vehicle-mounted navigation device, which comprises an input module, a current position detecting module, a memory, a micro controller and an output module, wherein the output module comprises a driver, projection equipment and a universal bracket; the input module is used for inputting commands and requests of a user to the vehicle-mounted navigation device; the current position detecting module is used for detecting the current position and the time of a vehicle; the memory is used for storing a digital map; the micro processor is used for calling the digital map in the memory to generate the road guiding according to the commands and requests inputted by the user and the current position of the vehicle, and outputting the generated result; and the output module is used for receiving road guiding information generated by the micro processor. The vehicle-mounted navigation device directly projects the road guiding information of the navigation system on front wind ...

Manufacturing method of silicon carbide power device junction terminal

The invention relates to a manufacturing method of a silicon carbide power device junction terminal. The manufacturing method comprises the following steps: step 1, forming a sacrificial layer at an epitaxial layer; step 2, manufacturing a mask at the sacrificial layer to form an injection window of a field limiting ring; step 3, carrying out etching on the portion, not being covered by the mask, of the sacrificial layer; step 4, removing the mask; and step 5, carrying out ion implantation to form the field limiting ring and a charger compensation layer simultaneously. According to the manufacturing method provided by the invention, on the basis of the sacrificial layer formed at the epitaxial layer, the field limiting ring and the charger compensation layer can be realized simultaneously by one-time ion implantation; the process is simple; and the manufacturing cost is low.

Process for producing ammonium sulfate by adopting negative pressure double-countercurrent evaporation and crystallization mode

The invention relates to a process for producing ammonium sulfate by adopting a negative pressure double-countercurrent evaporation and crystallization mode. One-effect evaporation and crystallization equipment comprises an evaporator, a crystallizer circulating pump and a crystallization heater; two-effect condensation and evaporation equipment comprises a condensation evaporator, a condenser heater and a condenser circulating pump; and the evaporation of the one-effect evaporation and crystallization equipment and the two-effect condensation and evaporation equipment is carried out under negative pressure by using a vacuum pump and a communicating pipe between the one-effect evaporation and crystallization equipment and the two-effect condensation and evaporation equipment. The one-effect evaporation and crystallization equipment is heated by using medium pressure steam for crystallization and evaporation, then secondary steam evaporated by the one-effect evaporation and crystallization ...

Preparation method for preparing hydrophilic quantum dots based on novel amphiphilic polymer ultrasonic emulsion process

The invention relates to a preparation method for preparing hydrophilic quantum dots based on a novel amphiphilic polymer ultrasonic emulsion process. The preparation method comprises the following steps: adding polymaleic anhydride-alt-1-octadecene and quantum dots into a reactor, and then adding dichloromethane into the reactor to form an oil phase of the polymaleic anhydride-alt-1-octadecene; adding a ring opening agent 2,2'-(ethylene dioxy)bis(ethylamine) into the reactor, and then adding deionized water into the reactor to form an aqueous phase of the 2,2'-(ethylene dioxy)bis(ethylamine); dropwise adding the oil phase into the aqueous phase to form an emulsion disperse system with uniform oil and water, and performing ultrasonic dispersion on the obtained emulsion disperse system with an ultrasonic disperser; performing rotary evaporation on the emulsion on a rotary evaporator at room temperature; after an organic solvent volatilizes, performing further rotary evaporation until the ...

Shell inserting and glue filling all-in-one machine for thin film capacitor

The invention relates to a shell inserting and glue pouring all-in-one machine for a film capacitor. The machine comprises a machine body; the transmission mechanism is arranged on the machine body and used for conveying the capacitor shells and the capacitor cores, and a plurality of sets of clamps used for containing the capacitor shells and the capacitor cores are sequentially and evenly arranged on the transmission mechanism at intervals in the transmission direction; the insertion shell assembly is arranged on the machine body and is used for inserting the capacitor core body into the capacitor shell; the pressing assembly is arranged on the machine body and is used for rotating the capacitor after shell insertion to a vertical state in which an opening of a capacitor shell faces upwards; and the glue filling mechanism is arranged on the machine body and is used for filling glue into the capacitor shell. The shell inserting procedure and the glue filling procedure are integrated on ...

Power semiconductor chip welding device

The invention discloses a power semiconductor chip welding device, which is used for welding a high-power high-voltage semiconductor module. The power semiconductor chip welding device comprises a substrate, an insulating element fixing frame, an insulating element and a semiconductor chip fixing frame, wherein the insulating element fixing frame is fixed above the substrate and has an insulating element fixing station; the insulating element is placed on the insulating element fixing frame; the semiconductor chip fixing frame is fixed on the insulating element fixing frame; and element welding positions are distributed on the semiconductor chip fixing frame. In the invention, the problem of inaccurate welding positions of the semiconductor chip caused by the relative position change of a semiconductor chip, a sheet welding material and the insulating element and the technical problem of open circuit caused by the relative position change of an SMD resistor, the sheet welding material and ...

Silicon carbide power module and packaging method thereof

The invention relates to a packaging method of a silicon carbide power module, comprising the following steps of: welding an aluminium nitride isolated layer on a molybdenum plate, placing silicon carbide chips into empty spaces of the aluminium nitride isolated layer to be welded with the molybdenum plate; welding molybdenum blocks on the silicon carbide chips, reserving gate lead slots on the molybdenum blocks; placing leads into the gate lead slots, welding and fixing, collecting the leads and leading the leads out; casting and moulding the molybdenum blocks, the silicon nitride isolated layer and the silicon carbon chips in an integrating way, mounting a base, a tube shell and a tube cap, and packaging. The invention also provides a silicon carbide power module. By adopting the method provided by the invention, the silicon carbon power module has higher reliability and stronger thermal cycle capability under the working conditions of high power and high temperature.

Constant-temperature reaction device for preparing high-temperature-resistant nonionic active agent

The constant-temperature reaction device comprises a box body, a fixing plate, a controller and a warning indicator, the fixing plate is installed on the inner wall of the box body, a cooling box is installed at the bottom of the fixing plate, a vertical plate is installed at the top of a transverse plate, two sets of first electric telescopic rods are installed on the outer wall of the vertical plate, and two sets of second electric telescopic rods are installed on the outer wall of the vertical plate. And an extrusion rod is mounted at one end of the first electric telescopic rod. An automatic adjusting function can be achieved by installing a temperature sensor, the temperature sensor controls a first electric telescopic rod to extend, the first electric telescopic rod extends to drive an extrusion rod to move, the extrusion rod moves to extrude a lifting plate, the bottom of the lifting plate descends to drive a first spring to contract, and a trigger rod at the bottom of the lifting ...

IGBT device and method for packaging whole-wafer IGBT chip

An IGBT device and a method for packaging a whole-wafer IGBT chip. The IGBT device comprises: an entire wafer IGBT chip, the upper surface thereof comprising a central gate connection zone and a plurality of emitter connection zones surrounding the central gate connection zone, and the lower surface thereof comprising a collecting zone, wherein the emitter connection zones located on the surface of a failure cellular zone of the chip are thinned; a collector washer which is fixed on the lower surface of the chip, and an emitter washer which is fixed on the upper surface of the chip; a collector electrode which is electrically contacted with the collector washer, and an emitter electrode which is electrically contacted with the emitter washer; and a gate leading wire which is connected to the central gate connection zone.

Automatic welding device based on capacitor core

The invention discloses an automatic welding device based on a capacitor core, and relates to the technical field of capacitor processing, the automatic welding device comprises a welding device body and a sound insulation cover, the outer wall of the welding device body is movably connected with a protection cabinet door through a hinge, and a cobalt glass visual window is embedded in the outer surface of the protection cabinet door. According to the automatic welding device based on the capacitor core, a rotating handle controls a bidirectional lead screw to rotate along the inner wall of a threaded sleeve, a movable frame is driven to move oppositely along with rotation of the bidirectional lead screw, so that a clamping plate is driven to horizontally move to clamp the capacitor core, the clamping plate abuts against a pressure sensing piece, and the extrusion force on the pressure sensing piece is continuously increased; when the pressure sensing piece senses that the pressure reaches ...

A aluminium track for three -dimensional storehouse automatically move equipment

The utility model discloses an aluminium track for three -dimensional storehouse automatically move equipment belongs to the automatic technical field of logistics storage. Be provided with three one at least T type grooves on the face of the orbital both sides of aluminium respectively, be provided with two at least T type grooves on the orbital bottom surface of aluminium, and the width in the 2nd T type groove is greater than the width in a T type groove, the corner of aluminium track upper surface is arc. The utility model provides a multiple accessory installation requirement for automizing found the aluminium track of storehouse mobile device, have characteristics such as compact structure, precision are high, workable, equipment operating noise is little, construction and accessory installation conveniently, the appearance is pleasing to the eye, can satisfy automatically move equipment .

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed. 1. A silicon carbide MOSFET device , comprising a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer , wherein a thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer.2. The device according to claim 1 , wherein the thickness of the second gate oxide layer is 1.5 to 4 times the thickness of the first gate oxide layer claim 1 , preferably 2 to 4 times claim 1 , and more preferably 2 to 3 times.3. The device according to claim 1 , wherein the thickness of the first gate oxide layer is in a range from 40 nm to 80 nm claim 1 , preferably in a range from 40 nm to 60 nm; and/orwherein the thickness of the second gate oxide layer is in a range from 60 nm to 320 nm, preferably in a range from 80 nm to 240 nm.4. The device according to claim 1 , wherein the first gate oxide layer corresponds to a channel claim 1 , one part of an N source region claim 1 , and optionally one part of a JFET region of the device claim 1 , and the second gate oxide layer corresponds to at least one part of the JFET region of the device; and{'sup': '+', 'wherein the first gate oxide layer preferably covers 20% to 60% a width of the N source region.'}5. ...

Two goods yards are returned transferred and are sent machine

The utility model relates to a material storage transportation equipment technical field, concretely relates to a two goods yards are returned transferred and are sent machine, including chain convey unit, revolving platform and arc track, the chain convey unit includes two, chain convey machine and the quick -witted parallel arrangement of the 2nd chain convey in on the revolving platform, the revolving platform rotatably set up in on the arc track, the revolving platform drives chain convey machine and the 2nd chain convey wind the arc core of arc track is rotatory. The utility model provides a two goods yards are returned transferred and are sent machine installs in a warehouse entry position usually, realizes two trays warehouse entry of leaving warehouse to realize the gyration of the no discrepancy in elevation, make chain convey machine and the 2nd chain convey machine respectively in the transfer chain butt joint of two angularities, realize that the goods turns to, shunts and integrates ...

Cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers

The invention discloses a cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers, relating to the production technology field of the water-soluble cutting fluid for photovoltaic material monocrystalline silicon or polycrystalline silicon. The cutting fluid mainly comprises polyethylene alkanediol segmented copolymers (molecular weight: 200 to 800), fluorocarbon surfactants or fluosilicic surfactants, wetting-dispersing agents, polar solvents and antibacterial agents. The cutting fluid provided by the invention has the advantages of greatly reducing the surface tension of the cutting fluid under an extremely low concentration, greatly improving the wettability of the cutting fluid on abrasive materials, and avoiding the surface damage or rupture ofthe silicon wafers caused by the reunited abrasive materials, thereby facilitating the improvement of the cutting precision and cutting yield, and meanwhile, the cutting fluid also reduces the cleaning ...

A support for presplit blasting powder charge

The utility model relates to a support for presplit blasting powder charge belongs to blasting technical field. The utility model discloses a support, support upper portion is equipped with the pulley. The utility model discloses during implementation, the big gun hole department of powder charge is located to the support for the pulley is located big gun hole top, passes pulley and flagging with the explosive fuse, bindes the powder stick to the explosive fuse that passes the pulley, then slowly transfer to the big gun downthehole, then one section distance back at the interval, the repeated operation of binding the powder stick, the powder stick setting downthehole until the big gun finishes. The utility model discloses can realize quick powder charge, and construction quality is good.

High-inclination small-flange conical roller bearing

A high-inclination small-flange conical roller bearing comprises a bearing inner ring, a rolling element and a small flange, wherein an end part of the bearing inner ring extends outwards, so that the small flange is formed; an oil groove is formed between the root part of the small flange and the outer surface of the bearing inner ring; the rolling element is arranged on the outer surface of the bearing inner ring; an end part of the rolling element is just located above the oil groove; an end surface of the rolling element is not contacted with the inner side surface of the small flange, and an acute included angle exists; and the distance between the end surface of the rolling element and the top of the small flange is larger than that between the end surface of the rolling element and the root part of the small flange, so that the top of the small flange doesn't bear impact force of the rolling element. According to the high-inclination small-flange conical roller bearing, the thickness ...

Rotatory chain convey machine

The utility model relates to a logistics storage transportation equipment technical field, concretely relates to a rotatory chain convey machine, including chain convey machine, swivel mount and circular orbit, chain convey machine level set up in on the swivel mount, the swivel mount is rotatable set up in circular orbit is last, the swivel mount drives when rotatory the chain convey machine uses circular orbit rotatory as the center. The utility model provides a pair of rotatory chain convey machine installs in the transfer chain corner usually, realize the pallet cargo do not have the discrepancy in elevation 90 left or transport direction right change, change the tray direction simultaneously. Not only realize the transfer chain flow, reduce and take up an area of the space, also improve storage conveyor automation degree, guarantee commodity circulation efficiency.

Soft foundation treatment construction method for sleeving and driving sludge layer sand replacement pile with cement mixing pile

The invention relates to the technical field of cement mixing piles, and discloses a soft foundation treatment construction method for sleeving a sludge layer replacement sand pile with a cement mixing pile, which comprises the following steps: leveling a construction site on a sludge layer, and marking the pile position of the sand pile on the construction site; a sand pile machine is used for constructing a sand pile, and the sand material forms the sand pile in the pile hole; secondary leveling is conducted on the construction site, and the cement pile position of the sand placing pile sleeving and driving cement mixing pile is measured; sand materials are used for replacing sludge rich in humus organic matter in a sludge layer to form a sand pile, then a drill bit of a cement mixing pile machine is used for drilling in and out of a cement pile position, slurry is continuously subjected to rotary jet grouting in the drilling and out process, after drilling is conducted by a set depth ...

Thin film capacitor terminal welding machine

The invention discloses a thin film capacitor terminal welding machine which comprises a base and a bearing seat, feeding seats are symmetrically arranged on the top of the base, and a first conveying assembly and a second conveying assembly are arranged in the two feeding seats respectively. According to the thin film capacitor terminal welding machine, under the extraction action of the liquid pump, absorption liquid enters the spraying pipe network and is sprayed to smoke through the nozzles at the bottom to adsorb harmful gas carried by the smoke, the smoke after adsorption floats upwards to make contact with the activated carbon filter screen, the activated carbon filter screen conducts secondary adsorption and purification on the smoke, and then the smoke is discharged out of the spraying pipe network. After adsorption, the gas enters the circulation box and is discharged through a discharge port in the top of the circulation box, meanwhile, the gas detector can detect the gas which ...

Method for passivating mesa of semiconductor chip

The invention provides a method for passivating a mesa of a semiconductor chip. The method comprises the steps that the semiconductor chip with a preset mesa model is placed into a reaction chamber for etching a reactive plasma, and the non-mesa area of the semiconductor chip is covered so that only the mesa area of the semiconductor chip can be exposed; reactant gas CH4 is fed into the reaction chamber, and carries out glow discharge under the action of the power of a radio frequency source to generate the plasma; the plasma deposits a diamond-like film on the mesa of the semiconductor chip so that a passivating layer can be formed. The method for passivating the mesa of the semiconductor chip has the advantages of being high in efficiency, good in uniformity, high in repeatability, high in flexibility and low in labor cost.

Automobile navigation apparatus and navigation system using the same

The invention provides a vehicle-mounted navigation device, which comprises an input module, a current position detecting module, a memory, a micro controller and an output module, wherein the output module comprises a driver, projection equipment and a universal bracket; the input module is used for inputting commands and requests of a user to the vehicle-mounted navigation device; the current position detecting module is used for detecting the current position and the time of a vehicle; the memory is used for storing a digital map; the micro processor is used for calling the digital map in the memory to generate the road guiding according to the commands and requests inputted by the user and the current position of the vehicle, and outputting the generated result; and the output module is used for receiving road guiding information generated by the micro processor. The vehicle-mounted navigation device directly projects the road guiding information of the navigation system on front wind ...

Bracket ceramic capacitor semi-automatic production jig and welding method

The invention relates to the technical field of capacitor devices, in particular to a bracket ceramic capacitor semi-automatic production jig and a welding method. The bracket ceramic capacitor semi-automatic production jig comprises a bottom plate, clamping plates and limiting blocks; the bottom plate is provided with a long table, and the long table is provided with positioning grooves for storing chips; each clamping plate set comprises a positioning plate and an auxiliary plate, the inner side of the positioning plate is provided with an installation position, the auxiliary plate is provided with a limiting part, the limiting part is located above the installation position, and one end of a metal bracket is installed on the installation position in the mode of being attached to the limiting part; the two clamping plate sets are arranged and located on the two sides of the long table correspondingly, and the installation positions of the positioning plates correspond to the positioning ...

Detection platform of windshield wiper

The invention provides a detection platform of a windshield wiper. The detection platform of the windshield wiper comprises a platform body, a mounting frame arranged on the platform body, an assembly frame hinged to the mounting frame, a front windshield sleeved with the mounting frame in a sealed mode and a windshield wiper assembly attached to the front windshield to conduct reciprocating wiping. The top of the protective cover is connected with a functional plate which inclines towards the outer surface of the front windshield, and a first interference assembly and a second interference assembly are arranged on the functional plate; the laser emitting assembly is arranged opposite to the front windshield, a laser power detection assembly is arranged on the platform, laser rays of the laser emitting assembly penetrate through the front windshield and then are gathered and collected by the light source collecting cover, and then the laser power is obtained by the laser power detection ...

Silicon carbide power module and packaging method thereof

Automatic top chain covering mechanism for trench

The invention discloses an automatic top chain covering mechanism for a trench. The automatic top chain covering mechanism comprises two upper supports, two lower supports and a top chain. The lower supports are mounted on a movable working platform through fixing bolts and springs. The upper supports are mounted on the lower supports through adjusting bolts. Grooved rollers are mounted between the upper supports through shafts. Two flat rollers are mounted at each of two ends of each lower support. The top chain covers the trench, and two ends of the top chain are fixed. The top chain penetrates the flat rollers and the grooved rollers to form an arch. The lower surface of the top plate is pressed on the grooved rollers, and the upper surface of the top chain is pressed on the lower side of the flat rollers. A cable and a hose in a drag chain in the trench enter the movable working platform from the lower side of the arch formed by the top chain. The automatic top chain covering mechanism ...

Boosting type feeding device for medical emulsifier production

The invention discloses a medical emulsifier production boosting type feeding device which comprises a supporting plate, a feeding cylinder is installed on the inner side of the top of the supporting plate through bolts, a clamping groove is formed in the bottom of the feeding cylinder, a bottom dismounting shell is installed at the bottom of the feeding cylinder through the clamping groove, and a clamping plate is installed at the top of the bottom dismounting shell. The clamping plate is clamped with the clamping groove, a sealing gasket is arranged on the top of the bottom detachable shell and located on the outer side of the clamping plate, and a pull-down handle is arranged at the bottom of the bottom detachable shell. Due to the fact that the bottom dismounting shell is fixedly connected through the fixing bolts, the fixing bolts are rotationally dismounted, the bottom dismounting shell is pulled downwards through a pull-down handle, the bottom dismounting shell is made to leave from ...

Metallized film gripper for film capacitor production

The invention relates to a metalized film gripper for film capacitor production, which comprises a mounting piece, a suction cup connected to the mounting piece and a plurality of branch arms connected to the suction cup, the branch arms are uniformly distributed around the circumference of the suction cup at intervals, and auxiliary suction assemblies are arranged on the branch arms. An opening is formed in the bottom of the suction cup, a first elastic supporting piece is arranged at the bottom of the suction cup, a mounting opening is formed in the middle of the first elastic supporting piece, a second elastic supporting piece is arranged in the mounting opening, and a plurality of vacuum suction holes are formed in the second elastic supporting piece. According to the application, the contact with the metallized film can be buffered when the metallized film is sucked, so that the possibility of excessive deformation of the metallized film is reduced, and the flatness of the metallized ...

Windscreen wiper assembly

The invention provides a windscreen wiper assembly. The windscreen wiper assembly comprises a wiping assembly and a spraying assembly. The wiping assembly comprises a driving mechanism, a three-connecting-rod assembly and a windscreen wiper assembly. The driving mechanism comprises two motors arranged side by side; the two motors correspondingly and independently operate in a time-sharing manner; the spraying assembly comprises a glass water tank, a foaming cleaning liquid tank and a mixing tank; a nozzle assembly is arranged in the mixing box and enables windshield washer fluid and foaming cleaning liquid to form cleaning foam through the secondary venturi air suction effect, and the mixing box is connected with a spray head matched with the windscreen wiper assembly. According to the windscreen wiper assembly, the two motors can drive the windscreen wiper assembly to operate, only one set of motors are in the working state in the traveling process, the other set of motors achieve the ...

Perfusion method and device of protection glue for chip insulation

The invention discloses a perfusion method of protection glue for chip insulation, comprising the following steps: 1) after the protection glue is poured in a closed container, the closed container vacuumizes the protection glue and maintains vacuum for some time; 2) a chip is arranged in a glue perfusion mold; 3) the protection glue is pressurized and poured in the glue perfusion mold; 4) and the chip is taken out after the protection glue is cured. As the closed container is adopted to vacuumize the protection glue, air bubbles in the protection glue are extruded by the protection glue to be discharged due to negative pressure, the cured protection glue forms a compact structure, a protection glue layer has good insulation effect, and therefore the surface breakdown voltage of the chip is enhanced. The invention discloses a device adopting the method to pour the protection glue at the same time.

Method for shaping table surface of semiconductor chip

The invention discloses a method for shaping the table surface of a semiconductor chip. The method comprises the following steps: using a grinding wheel rotating at a high speed, forming a groove corresponding to the needed groove shape in the grinding wheel, plating a grinding layer in the groove, and after the cylindrical surface of a chip ending terminal on the chip to be machined stretches in the groove, shaping the table surface by means of contacting with the groove and grinding. The method disclosed by the invention has the advantages of being convenient and efficient, simple in process, high in yield, low in manufacturing cost, and the like.

IGBT (insulated gate bipolar transistor) module encapsulating and welding structure

The invention discloses an IGBT (insulated gate bipolar transistor) module encapsulating and welding structure which comprises a substrate, a lining plate, a chip and a busbar, wherein the upper surfaces of the substrate and the lining plate are coated with welding fluxes or provided with welding lugs; the substrate and the lining plate, the lining plate and the chip and the busbar and the lining plate are respectively connected through multiple metal supporting columns. The metal supporting columns which are 0-5mm thick are manufactured on a metal layer on the front surface of the lining plate and a welding region on the front surface of the substrate and are used for supporting the chip and the lining plate, so that the welding fluxes can uniformly flow after being melted to fill clearances, and the thickness and the uniformity of a welding layer are controlled; the metal supporting columns can be used for fixing the welding lugs with through holes, and sliding and drifting of the welding ...

Silicon carbide ion implantation doped mask structure and preparation method thereof

The invention discloses a silicon carbide ion implantation doped mask structure and a preparation method thereof. One mask structure is characterized in that a first silicon dioxide (SiO2) barrier layer is formed on the surface of a silicon carbide epitaxial wafer; and a second polysilicon (Poly-Si) barrier layer is formed on the first barrier layer in a non-implantation-area. The other mask structure is characterized in that a first silicon dioxide barrier layer is formed on the surface of the silicon carbide epitaxial wafer; a second polysilicon barrier layer is formed on the first barrier layer in the non-implantation-area; and a third silicon diode barrier layer is formed on the second barrier layer. The mask structure and the preparation method thereof can settle a problem of non-uniform concentration distribution of box-type impurities after ions are implanted into the SiC epitaxial wafer, and furthermore can reduce surface damage caused by implantation of high-energy ions into the ...

IGBT DEVICE AND METHOD FOR PACKAGING WHOLE-WAFER IGBT CHIP

An IGBT device and a method for packaging a whole-wafer IGBT chip. The IGBT device comprises: an entire wafer IGBT chip, the upper surface thereof comprising a central gate connection zone and a plurality of emitter connection zones surrounding the central gate connection zone, and the lower surface thereof comprising a collecting zone, wherein the emitter connection zones located on the surface of a failure cellular zone of the chip are thinned; a collector washer which is fixed on the lower surface of the chip, and an emitter washer which is fixed on the upper surface of the chip; a collector electrode which is electrically contacted with the collector washer, and an emitter electrode which is electrically contacted with the emitter washer; and a gate leading wire which is connected to the central gate connection zone. 1. An IGBT device , comprising:a whole-wafer IGBT chip, wherein an top surface of the whole-wafer IGBT chip comprises a central gate connection zone and a plurality of emitter connection zones surrounding the central gate connection zone, and a bottom surface of the whole-wafer IGBT chip comprises a collecting zone, wherein an emitter connection zone located on a surface of a failure cellular zone of the chip is thinned;a collector gasket fixed on the bottom surface of the chip and an emitter gasket fixed on the top surface of the chip, wherein a radius of the collector gasket is less than a radius of the chip, the collector gasket covers the collecting zone, a radius of the emitter gasket is less than the radius or the chip, and the emitter gasket covers the emitter connection zones but does not cover a terminal zone of the chip;a collector electrode in electrical contact with the collector gasket and an emitter electrode in electrical contact with the emitter gasket; anda gate leading wire connected to the central gate connection zone, wherein the gate leading wire is insulated from the emitter gasket and the emitter electrode.2. The IGBT device ...

High-power IGBT module soldering device

The invention provides a high-power IGBT module soldering device. The soldering device comprises a soldering lug fixing tool, a liner plate fixing tool and a positioning pin, wherein the soldering lug is consistent with a soldering lug in thickness and provided with a through groove for fixing the soldering lug; a through groove for fixing the liner plate to be welded is formed in the liner plate fixing tool; a through groove used for fixing a liner plate to be welded is formed in the liner plate fixing tool; the soldering lug fixing tool and the liner plate fixing tool are respectively provided with a positioning hole corresponding to the positioning pin. Formed sheet soldering flux (soldering lug) without scaling powder is adopted and put in the specific tool, so that positions of an area to be soldered, the sheet material and a liner plate element to be soldered are fixed to solder an IGBT module through the soldering lug; after soldering, it is unnecessary to clean a soldered product ...

Semiconductor device voltage-resistant terminal structure and manufacturing method for SiC device

The invention discloses a semiconductor device voltage-resistant terminal structure and a manufacturing method for a SiC device. The voltage-resistant terminal structure comprises a first doped region and a second doped region with a doping concentration which is smaller than that of the first doped region. The etching section of the semiconductor device voltage-resistant terminal structure has a tabletop structure with a continuous smooth curve surface. The etching section penetrates through the boundary between the first doped region and the second doped region from the first doped region, thereby forming a barrier layer. Furthermore the etching section smoothly transits to a non-tabletop area in the second doped region. The manufacturing method comprises the steps of mask layer depositing, photoetching, wet etching on the mask layer, dry etching a semiconductor device substrate material, etc. The semiconductor device voltage-resistant terminal structure can alleviate electric field concentration ...

Silicon carbide power device junction terminal structure and manufacturing method thereof

The invention relates to a silicon carbide power device junction terminal structure and a manufacturing method thereof. The silicon carbide power device junction terminal structure comprises: a plurality of filed limiting rings, which are arranged at an epitaxial layer at intervals by doping; and a doping region, which is arranged above the epitaxial layer. The doping region is obtained by re-epitaxy processing on the epitaxial layer. With the silicon carbide power device junction terminal structure, the power device can have good voltage endurance capability and high reliability.

Dike construction guniting device with fender mechanism

The invention provides an embankment construction guniting device provided with a fender mechanism, and relates to the technical field of guniting devices.The embankment construction guniting device comprises a mounting mechanism, when an uneven concrete layer is encountered in re-spraying, a movable plate passes through the concrete layer on the lower side, the movable plate makes stable contact with the concrete layer, the relative height of the movable plate on a fixing piece is not changed, and the movable plate is fixed to the concrete layer; when the movable plate passes through concrete on the higher side, the concrete layer pushes the movable plate upwards, so that the movable plate moves towards the upper portion of the fixing piece, the upper end of the movable plate covers a part of the leaking hole A, and therefore less concrete flows out of the leaking hole A on the side not moving relative to the movable plate. Therefore, the situation that the concrete layer is uneven due ...

Silicon carbide power module and packaging method thereof

The invention relates to a packaging method of a silicon carbide power module. The packaging method comprises the following steps of: welding an aluminum nitride isolation layer on a molybdenum plate, placing a silicon carbide chip in a blank of the aluminum nitride isolation layer, and welding the silicon carbide chip with the molybdenum plate; welding a molybdenum block on the silicon carbide chip, and reserving a gate electrode lead slot on the molybdenum block; placing a lead in the gate electrode lead slot, arranging a compression ring on the lead, placing a spring used for crimping in the compression ring, and collecting and leading out the lead; and carrying out integral casting forming on the molybdenum plate, the silicon carbide isolation layer and the silicon carbide chip through using epoxy resin, installing a base, a tube shell and a tube cap, and packaging. The invention also discloses a silicon carbide power module. The invention ensures that the silicon carbide power module ...

Silicon wafer bearing device

The invention provides a routing unit which comprises a body and a plurality of silicon wafer bearing grooves used for bearing silicon wafers. The silicon wafer bearing grooves are formed in the body at equal interval in the horizontal direction; the silicon wafer bearing grooves slant in the same direction in the horizontal direction, and same first preset included angles are formed between the planes of any lateral walls of the silicon wafer bearing grooves and the vertical planes perpendicular to the horizontal direction; the multiple silicon wafer bearing grooves slanting in the same direction are formed in the body, the same first preset included angles are formed between the planes of the lateral walls of the silicon wafer bearing grooves and the vertical planes perpendicular to the horizontal direction, when the silicon wafers same in thickness are placed in the multiple silicon wafer bearing grooves respectively, the silicon wafers slant in the same direction, the slant angles are ...

Process for producing ammonium sulfate by adopting negative pressure double-countercurrent evaporation and crystallization mode

The invention relates to a process for producing ammonium sulfate by adopting a negative pressure double-countercurrent evaporation and crystallization mode. One-effect evaporation and crystallization equipment comprises an evaporator, a crystallizer circulating pump and a crystallization heater; two-effect condensation and evaporation equipment comprises a condensation evaporator, a condenser heater and a condenser circulating pump; and the evaporation of the one-effect evaporation and crystallization equipment and the two-effect condensation and evaporation equipment is carried out under negative pressure by using a vacuum pump and a communicating pipe between the one-effect evaporation and crystallization equipment and the two-effect condensation and evaporation equipment. The one-effect evaporation and crystallization equipment is heated by using medium pressure steam for crystallization and evaporation, then secondary steam evaporated by the one-effect evaporation and crystallization ...

IGBT module busbar polishing method and polishing tool

The invention discloses an IGBT module busbar polishing method and a polishing tool. The method comprises the steps that 1, the polishing areas of busbars and the distribution of the busbars on the module are obtained through calculation, and meanwhile the distance between a module pipe cover and the polishing face of each busbar after being bent is used; 2, the polishing tool is obtained according to the data of the first step; 3, the polishing tool obtained in the second step is fixed onto the busbars directly, the module is fixed onto a support, and a polishing machine is used for conducting polishing operation on the busbars. The tool is used for implementing the method. The IGBT module busbar polishing method and the polishing tool have the advantages that the theory is simple, the operation is simple and convenient, the IGBT module busbar polishing operation is greatly simplified, and the labor intensity is relieved.

Ceramic lining plate

The invention discloses a ceramic lining plate. The ceramic lining plate comprises a ceramic layer and metal layers arranged on the upper surface and the lower surface of the ceramic layer; at least one of the upper surface and the lower surface of the ceramic layer is provided with scattered electric field structures used for concentrating scattered electric fields. The scattered electric field structures are arranged on the two outer sides of the part, not covered with the metal layers, of the ceramic layer, and the scattered electric field structures on the two sides are distributed in an axial symmetry mode. By means of the ceramic lining plate, the scattered electric fields can be better concentrated, and therefore the insulation performance can be better.

Igbt device and method for packaging whole-wafer igbt chip

An IGBT device and a method for packaging a whole-wafer IGBT chip. The IGBT device comprises: an entire wafer IGBT chip (33), the upper surface thereof comprising a central gate connection zone (13) and a plurality of emitter connection zones (15, 25) surrounding the central gate connection zone (13), and the lower surface thereof comprising a collecting zone, wherein the emitter connection zones (15, 25) located on the surface of a failure cellular zone of the chip are thinned; a collector washer (32) which is fixed on the lower surface of the chip (33), and an emitter washer (34) which is fixed on the upper surface of the chip (33); a collector electrode (31) which is electrically contacted with the collector washer (32), and an emitter electrode (36) which is electrically contacted with the emitter washer (34); and a gate leading wire (37) which is connected to the central gate connection zone (13), wherein the gate leading wire (37) is insulated from the emitter washer (34) and the emitter electrode (36). The IGBT device avoids the harmful effect of the failure cellular zone in the whole-wafer chip on the performance of the IGBT device.