Light-emitting devices and methods of manufacturing the same

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer. 1. A light-emitting device (LED) comprising:a first semiconductor layer of a first impurity type;a second semiconductor layer of a second impurity type;an active layer between the first and second semiconductor layers; andan emission pattern layer on the first semiconductor layer, the emission pattern layer including a plurality of layers and having an emission pattern that externally emits light generated from the active layer.2. The LED of claim 1 , wherein the emission pattern layer comprises an aluminum nitride (MN) layer and an aluminum gallium nitride (AlGaN) layer.3. The LED of claim 1 , wherein the emission pattern layer comprises an MN layer claim 1 , and AlGaN layers and gallium nitride (GaN) layers alternately formed on the MN layer.4. The LED of claim 1 , further comprising a metal layer under the second semiconductor layer and configured to reflect light generated from the active layer toward the emission pattern layer.5. The LED of claim 4 , further comprising an insulating layer between the metal layer and the second semiconductor layer.6. The LED of claim 5 , further comprising a first contact layer that penetrates the insulating layer claim 5 , the second semiconductor layer claim 5 , and the active layer claim 5 , and contacts the first semiconductor layer and the metal layer.7. The LED of claim 5 , further comprising a second contact layer on a portion between the insulating layer and the second semiconductor layer claim 5 , the second contact layer penetrating the second semiconductor layer ...

Wafer, Fabricating Method Of The Same, And Semiconductor Substrate

A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface. 1. A wafer comprising:a first substrate layer formed at a first surface;a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer; andan oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.2. The wafer of claim 1 , wherein the oxygen diffusion protecting layer is a high-concentration boron layer.3. The wafer of claim 2 , wherein a first boron concentration of the high-concentration boron layer is higher than a second boron concentration of the first substrate layer and a third boron concentration of the second substrate layer.4. The wafer of claim 1 , wherein a first copper concentration of the oxygen diffusion protecting layer is higher than a second copper concentration of the first substrate layer and a third copper concentration of the second substrate layer.5. The wafer of claim 1 , wherein a thickness of the first substrate layer is smaller than that of the second substrate layer.6. The wafer of claim 1 , wherein the oxygen diffusion protecting layer is formed to a depth of about 3 to 10 μm from the first surface.7. The wafer of claim 1 , wherein the first surface includes a surface on which an active region of an integrated circuit ...

Semiconductor Devices And Methods of Manufacturing The Same

A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer. 1. A semiconductor device comprising:at least two stack structures, each of the at least two stack structures including a first nitride semiconductor layer, a first masking layer on the first nitride semiconductor layer, a second nitride semiconductor layer on the first masking layer, and a first inter layer on the second nitride semiconductor layer.2. The semiconductor device of claim 1 , further comprising: 'a first of the at least two stack structures is on the at least one buffer layer; and', 'at least one buffer layer; wherein'}a third nitride semiconductor layer on a second of the at least two stack structures.3. A semiconductor device comprising:a first nitride semiconductor layer;a first inter layer on the first nitride semiconductor layer; andat least one stack structure on the first inter layer, the at least one stack structure including a second nitride semiconductor layer, a first masking layer on the second nitride semiconductor layer, a third nitride semiconductor layer on the first masking layer, a second inter layer on the third nitride semiconductor layer, and a fourth nitride semiconductor layer on the second inter layer.4. The semiconductor device of claim 3 , further comprising:a fifth nitride semiconductor layer; and 'the first nitride semiconductor layer is on the third inter layer.', 'a third inter layer on the fifth nitride semiconductor layer; wherein'}5. The semiconductor device of claim 3 , further comprising: 'the first nitride semiconductor layer is on the at least one buffer layer.', 'at least one buffer layer; wherein'}6. A semiconductor device comprising:at least one first ...

RECEIVING APPARATUS AND METHOD FOR PROVIDING INPUT BITS OF FAST FOURIER TRANSFORMER ACCORDING TO MODULATION

A technology is provided capable of improving the efficiency of an OFDM system by obtaining the performance in Bit Error Rate (BER) in a wireless communication using OFDM and determining the minimum FFT input bit that produces a SNR difference of 0.1 dB or below with respect to a theoretical BER graph at a desired performance. 1. A receiving apparatus for providing input bits for a Fast Fourier Transformer (FFT) according to a modulation scheme on an Orthogonal Frequency Division Multiplexing (OFDM) system using Fourier Transform (FT) , the receiving apparatus comprising:a modulation scheme determiner configured to determine a modulation scheme, which is performed on an OFDM signal received on the OFDM system; and{'b': '7', 'an input bit determiner configured to provide upper bits of the OFDM signal as input bits for a Fast Fourier Transformer, if the modulation scheme determiner determines that the OFDM signal is a Quadrature Phase Shift Keying (QPSK) signal.'}2. The receiving apparatus of claim 1 , wherein the input bit determiner provides upper 8 bits of the OFDM signal as input bits for the Fast Fourier Transformer if the modulation scheme determiner determines that the OFDM signal is a 16 Quadrature Amplitude Modulation is (16 QAM) signal.3. The receiving apparatus of claim 1 , wherein the modulation scheme determiner determines a modulation scheme which is performed on a signal obtained by converting the received OFDM signal to a digital signal and removing a Cyclic Prifix (CP) from the converted digital signal.4. An Orthogonal Frequency Division Multiplexing (OFDM) signal receiving method for providing input bits for a Fast Fourier Transformer (FFT) according to a modulation scheme claim 1 , the method comprising:receiving an OFDM signal that is modulated by a predetermined modulation scheme in an OFDM system;determining a modulation scheme that is performed on the received OFDM signal; andproviding upper 7 bits of the OFDM signal as input bits for the FFT, ...

METHOD OF SETTING UP DYNAMIC MULTICAST AND BROADCAST SERVICE ZONE FOR PROVIDING MOBILE INTERNET PROTOCOL TELEVISION SERVICE

A technology of setting up a MBS zone for providing a mobile IPTV service is provided in which the MBS zone is effectively managed, so that QoS is prevented from being degraded due to the handover delay that is caused by a MBS handover occurring when a user moves between MBS zones. 1. A method of setting up a dynamic Multicast and Broadcast Service (MBS) zone for providing a mobile Internet Protocol Television (IPTV) service , the method comprising:setting up a MBS zone based on a base station (BS) forming a cell having a mobile terminal; andsetting up a MBS zone by allocating MBS channels to base stations adjacent to the base station (BS) according to a movement tendency that the mobile terminal moves from the base station (BS) to the base stations adjacent to the base station (BS).21. The method of clam , wherein in the setting of the MBS zone by allocating MBS channels , the MBS channel is allocated to six adjacent base stations , into which the mobile terminal is movable from the base station (BS) forming the cell , thereby setting up a first MBS zone for the mobile terminal based on seven base stations including the base station (BS) forming the cell and the six adjacent base stations.3. The method of claim 2 , wherein in the setting of the MBS zone by allocating MBS channels claim 2 , the MBS channel is allocated to twelve adjacent base stations claim 2 , which are adjacent to the seven base stations forming the first MBS zone claim 2 , thereby setting up a second MBS zone for the mobile terminal based on nineteen base stations including the seven base stations forming the first MBS zone and the twelve adjacent base stations.4. The method of claim 3 , wherein in the setting of the MBS zone by allocating MBS channels claim 3 , the number of base stations used to form a MBS zone is determined between seven and nineteen based on the movement tendency including a direction or speed of movement of the mobile terminal.5. The method of claim 1 , wherein in the ...

MUTUAL AUTHENTICATION SYSTEM AND METHOD FOR MOBILE TERMINALS

Provided is a technique for mutual authentication between different kinds of objects (devices, apparatuses, users, etc.) by expanding the kinds of objects that are subject to authentication, such as authentication between users, authentication between users and an apparatuses (devices, equipment, terminals, etc.), and authentication between apparatuses (devices, equipment, terminals, etc.). 1. A method for mutual authentication through an authentication agent between a mobile terminal and an authentication server , comprising:generating a first challenge signal using first arbitrary information and transmitting the first challenge signal to the mobile terminal;receiving a first response signal generated based on information about the mobile terminal, from the mobile terminal;generating a query signal for requesting authentication of the mobile terminal and the authentication agent, and transmitting the query signal to the authentication server;receiving a second challenge signal generated based on second arbitrary information, from the authentication server;generating a second response signal based on information about the authentication agent, and transmitting the second response signal to the authentication server;receiving a first reply signal generated based on the information about the authentication agent, from the authentication server; andtransmitting a second reply signal generated based on the information about the mobile terminal, to the mobile terminal.2. The method of claim 1 , further comprising allocating a seed values SEED_M claim 1 , a key value KEY_M claim 1 , and identification information ID_M to the mobile terminal claim 1 , allocating a seed value SEED_AG claim 1 , a key value KEY_AG claim 1 , and identification information ID_AG to the authentication agent claim 1 , and then storing the seed values SEED_M and SEED_AG claim 1 , the key values KEY_M and KEY_ID claim 1 , and the identification information ID_M and ID_AG in the authentication ...

VERTICAL LIGHT EMITTING DEVICE

According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern. 1. A vertical light emitting device (LED) , comprising:a semiconductor layer including an active layer configured to emitting light;a first electrode on a first side of the semiconductor layer; anda second electrode on a second side of the semiconductor layer opposite to the first electrode, at least one of the first and second electrodes including a metal electrode pattern and a transparent electrode pattern, the transparent electrode pattern being in a region between segment electrodes of the metal electrode pattern, and being electrically connected to the metal electrode pattern.2. The LED of claim 1 , wherein the metal electrode pattern includes at least one of titanium (Ti) claim 1 , aluminum (Al) claim 1 , chromium (Cr) claim 1 , gold (Au) claim 1 , and an alloy containing at least one of Ti claim 1 , Al claim 1 , Cr and Au.3. The LED of claim 2 , wherein the metal electrode pattern has at least one gap from about 100 μm to about 500 μm.4. The LED of claim 2 , wherein the transparent electrode pattern includes at least one of a transparent conducting oxide claim 2 , carbon nanotube (CNT) claim 2 , and graphene.5. The LED of claim 4 , wherein the transparent electrode pattern includes at least one of indium-tin oxide (ITO) and zinc oxide (ZnO).6. The LED of claim 1 , wherein the transparent electrode pattern includes at least one ...

OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. 1. A method of manufacturing an oxide TFT comprising:forming a gate on a substrate, and forming a gate insulating layer on the substrate by covering the gate;forming a channel, and a capping layer having a higher work function than the channel on the gate insulating layer such that the channel corresponds to the capping layer; andforming a source and a drain on either side of the capping layer and the channel and partially on a top surface of the capping layer.2. The method of claim 1 , wherein the channel is formed of a material of In—Zn oxide doped with Ni.3. The method of claim 1 , wherein the channel is formed of a material of Ni—In—Zn oxide doped with a first claim 1 , a second claim 1 , or a third group transition element.4. The method of claim 1 , wherein the capping layer is Ga—In—Zn oxide.5. The method of claim 4 , wherein the capping layer is Ga—In—Zn oxide doped with the first or the second group element.6. A method of manufacturing an oxide TFT comprising:forming a channel, and a capping layer having a higher work function than the channel on a surface portion of a substrate;forming a source and a drain on either side of the capping layer and the channel so as to expose the capping layer; andforming a gate insulating layer on the capping layer, the source, and the drain, and forming a gate, corresponding to the capping layer, on the gate insulating layer.7. The method of claim 6 , wherein the channel is formed of a material of In—Zn oxide doped with Ni.8. The method of claim 6 , wherein the channel ...

OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME

Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession. 1. A method of fabricating a thin film transistor , the method comprising:forming a gate;forming a gate insulating layer on the gate;forming a channel including zinc oxide on a portion of the gate insulating layer;forming a source and drain by coating a conductive material on the gate insulating layer and the channel and etching the conductive material on the channel; andforming a recession by etching a surface of the channel exposed between the source and the drain.2. The method of claim 1 , wherein forming the recession includes providing a step with respect to portions of the channel contacting the source and drain.3. The method of claim 1 , wherein the zinc oxide is ZnO claim 1 , InZnO claim 1 , or GaInZnO.4. The method of claim 3 , wherein forming the recession by etching includes a wet etching process using a zinc oxide-based etchant including an aqueous mixture solution of CHCOOH and at least one of HCl claim 3 , HF claim 3 , and PO.5. The method of claim 4 , wherein the amount of the at least one of HCl claim 4 , HF claim 4 , and POis in the range from about 0.1 to about 1 vol %.6. The method of claim 4 , wherein the amount of CHCOOH is in the range from about 5 to about 50 vol %.7. A method of forming a zinc oxide-based etchant comprising:{'sub': 2', '5, 'mixing at least one of HCl, HF, and POwith deionized water; and'}{'sub': 3', '2', '5, 'mixing CHCOOH with the mixture of at least one of HCl, HF, and POand deionized water.'}8. The method of claim 7 , wherein the amount of the at least one of HCl ...

SUCTION APPARATUS FOR FABRIC FILTER AND FILTERING DEVICE FOR LIQUID FILTRATION USING THE SAME

Provided are a suction apparatus for a fabric filter and a filtering device for liquid filtration using the same. A main suction slit and a sub-suction slit are provided in parallel by a partition. Thereby, pile threads undergo delayed straightening and fluctuation while going through the sub-suction slit and then are rapidly straightened in the main suction slit. Thus, a back-washing effect can be further improved. 1. A suction apparatus for a fabric filter , comprising:{'b': 100', '110', '130', '110', '120', '130', '110, 'i': 'a', 'a suction plate () having a main suction slit () having a length greater than a width and at least one sub-suction slit () separated from the main suction slit () by a partition (), a width of the sub-suction slit () being smaller than that of the main suction slit (); and'}{'b': 200', '100, 'a suction body () on which the suction plate () is mounted.'}2. A suction apparatus for a fabric filter , comprising:{'b': 100', '110', '130', '160', '130', '110, 'a suction plate (″) having a main suction slit () and at least one sub-suction slit () partitioned with a partition () made of a metal material, a width of the sub-suction slit () being smaller than that of the main suction slit (); and'}{'b': 200', '100, 'a suction body () on which the suction plate (″) is mounted.'}3. A suction apparatus for a fabric filter , comprising:{'b': 100', '140', '150, 'a suction plate (′) having a main suction guide () and at least one sub-suction guide (), which are spaced apart from each other by a predetermined distance and protrude in one direction; and'}{'b': 200', '100, 'a suction body () on which the suction plate (′) is mounted.'}4100100100. The suction apparatus according to claim 1 , wherein the suction plate ( claim 1 , ′ claim 1 , ″) is formed by injection molding.5130. The suction apparatus according to claim 1 , wherein the two to five sub-suction slits () are formed so as to be parallel to each other.6150. The suction apparatus according to ...

MULTI-PORT LIGHT SOURCES OF PHOTONIC INTEGRATED CIRCUITS

A multi-port light source of a photonic integrated circuit (PIC) may include a light emission portion for generating light; and a plurality of waveguides on opposite sides of the light emission portion to guide the light. A multi-port light source of a photonic integrated circuit (PIC) may include a first layer including a first pattern and a second pattern that are different from each other; an insulating layer on at least a region of the first layer; an active layer on at least a region of the insulating layer; and a reflective layer on the active layer. 1. A multi-port light source of a photonic integrated circuit (PIC) , the multi-port light source comprising:a light emission portion for generating light; anda plurality of waveguides on opposite sides of the light emission portion to guide the light.2. The multi-port light source of claim 1 , further comprising:a substrate; anda first insulating layer formed on the substrate;wherein the light emission portion and the plurality of waveguides are on the first insulating layer.3. The multi-port light source of claim 1 , wherein the light emission portion comprises:a first reflective layer;an active layer on the first reflective layer; anda second reflective layer on the active layer.4. The multi-port light source of claim 3 , further comprising;a second insulating layer between the first reflective layer and the active layer.5. The multi-port light source of claim 3 , wherein the plurality of waveguides are connected to the first reflective layer while overlapping the first reflective layer.6. The multi-port light source of claim 3 , wherein the first reflective layer comprises a plurality of bars that are separated from each other with intervals between the bars.7. The multi-port light source of claim 3 , wherein the first reflective layer and the plurality of waveguides comprise silicon.8. The multi-port light source of claim 4 , wherein the second insulating layer comprises silicon oxide material.9. The multi- ...

METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER

A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature. 1. A method of growing a nitride semiconductor layer , the method comprising:preparing a substrate in a reactor;growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate; andremoving the substrate at a second temperature.2. The method of claim 1 , wherein the growing a first nitride semiconductor includes growing the first nitride semiconductor on the substrate at the first temperature equal to or higher than 950° C. claim 1 , and the removing the substrate includes removing the substrate at the second temperature equal to or higher than 400° C.3. The method of claim 1 , wherein the growing a first nitride semiconductor includes growing gallium nitride.4. The method of claim 1 , wherein the reactor is a hydride vapor phase epitaxy (HVPE) reactor claim 1 , the preparing a substrate includes preparing the substrate in the HVPE claim 1 , and the growing a first nitride semiconductor includes growing the first nitride semiconductor using HVPE.5. The method of claim 4 , wherein the growing a first nitride semiconductor includes growing the first nitride semiconductor on the substrate at the first temperature ranging from about 950° C. to about 1100° C.6. The method of claim 1 , further comprising:stacking a second nitride semiconductor on the first nitride semiconductor after the removing the substrate.7. The method of claim 6 , wherein the stacking a second nitride semiconductor includes stacking the second nitride semiconductor having a thickness equal to or ...

MICROPROCESSOR CHIP, DATA CENTER, AND COMPUTING SYSTEM

A microprocessor chip includes a plurality of processors; at least one first optical input/output unit configured to receive optical signals from an external device and transmit optical signals to the external device; and an optical system bus that is connected between the plurality of processors and the at least one first optical input/output unit. 1. A microprocessor chip for performing optical communication with at least one external device , the microprocessor chip comprising:a plurality of processors;at least one first optical input/output unit that is formed in the microprocessor chip and is configured to receive optical signals from the at least one external device and transmit optical signals to the at least one external device; andan optical system bus that is connected between the plurality of processors and the at least one first optical input/output unit.2. The microprocessor chip of claim 1 , wherein the optical system bus includes an internal bus configured to provide at least one of i) a connection between the plurality of processors claim 1 , and ii) a connection between the plurality of processors and a register.3. The microprocessor chip of claim 1 , wherein the optical system bus includes multi-channel optical wave guides.4. The microprocessor chip of claim 1 , wherein the at least one first optical input/output unit is configured such that the optical signals received from the at least one external device by the at least one first optical input/output unit are directly transmitted to the plurality of processors.5. The microprocessor chip of claim 1 , wherein each of the plurality of processors is configured to output optical signals such that the optical signals are directly transmitted to the at least one external device through the optical system bus and the at least one first optical input/output unit.6. The microprocessor chip of claim 1 , wherein each of the plurality of processors comprises:an optical detector that is connected with the ...

MICRO LENS, DEVICE EMPLOYING THE SAME, AND METHOD OF MANUFACTURING THE SAME

Example embodiments relate to a micro lens and a method of manufacturing the micro lens. The micro lens may include a substrate and an internal lens region existing in the substrate. The internal lens region may have a refractive index that is different from a refractive index of the substrate. The internal lens region may include at least one boundary contacting the substrate and formed as a curve. As a result, light incident in the substrate through a surface of the substrate is converged or diverged by the curve. 1. A micro lens comprising:a substrate; andan internal lens region within the substrate, the internal lens region having a first refractive index that is different from a second refractive index of the substrate, the internal lens region including at least one boundary contacting the substrate, the at least one boundary having a form of a curve,wherein the micro lens is configured such that incident light entering the substrate through a surface of the substrate is converged or diverged by the curve.2. The micro lens of claim 1 , wherein the substrate has at least one flat surface.3. The micro lens of claim 1 , wherein the first refractive index of the internal lens region is less than the second refractive index of the substrate.4. The micro lens of claim 3 , wherein the substrate includes silicon claim 3 , and the internal lens region includes silicon oxide.5. The micro lens of claim 4 , wherein the internal lens region is formed in the substrate by an ion implantation.6. The micro lens of claim 3 , wherein the internal lens region is formed in the substrate by an ion implantation.7. The micro lens of claim 1 , wherein the second refractive index of the substrate is less than the first refractive index of the internal lens region.8. The micro lens of claim 7 , wherein the substrate includes silicon oxide claim 7 , and the internal lens region includes silicon.9. The micro lens of claim 8 , wherein the substrate is obtained by performing an ion ...

APPARATUS AND METHOD FOR PROVIDING SECURITY FOR VIRTUALIZATION

Provided is a security providing method based on a security breach in a security providing apparatus in which a physical device is virtualized so that a virtual machine monitor operates and is capable of working in a main domain and one or more sub domains. The method includes repairing sub domains experiencing security breaches; and updating security modules of the sub domains. 1. A security providing apparatus that virtualizes a physical device that is a hardware resource , the apparatus comprising:one or more domains, each of which comprises a guest operating system, operates through the physical device, and comprises security modules for detecting and repairing a security breach; anda virtual machine monitor configured to be shared by the domains by virtualizing the physical device.2. The apparatus of claim 1 , wherein the domains comprise:a main domain in which only verified software operates; andone or more sub domains in which software integrity-verified by the main domain is installed.3. The apparatus of claim 2 , wherein the main domain comprises:the guest operating system; anda security module managing module configured to be controlled to safely install verified programs in the sub domains.4. The apparatus of claim 2 , wherein the sub domains comprise:the guest operating system;a security module configured to conduct security inspection on its own or other sub domains; andan application configured to be operated by the guest operating system.5. The apparatus of claim 4 , wherein the virtual machine monitor comprises:a virtual access control module;a backup module configured to store normal state information during normal operation of the sub domain and generate backup information;a storage module configured to store data including security module state information and an integrity verification value for the application, the security module, and the guest operating system in the sub domain; andan integrity verifying module which when booting the sub domain ...

RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path. 1. A method of manufacturing a resistive random access memory , comprising:forming a lower electrode;forming a resistive layer on the lower electrode;doping the resistive layer with a transition metal using an implantation process; andforming an upper electrode on the resistive layer.2. The method of claim 1 , wherein the lower electrode is formed of a metal or a metal oxide.3. The method of claim 2 , wherein the metal includes at least one element selected from the group consisting of Al claim 2 , Hf claim 2 , Zr claim 2 , Zn claim 2 , W claim 2 , Co claim 2 , Au claim 2 , Pt claim 2 , Ru claim 2 , Ir claim 2 , and Ti.4. The method of claim 1 , wherein the resistive layer is formed of a transition metal oxide.5. The method of claim 4 , wherein the transition metal oxide includes at least one compound selected from the group consisting of NiO claim 4 , TiO claim 4 , HfO claim 4 , ZrO claim 4 , ZnO claim 4 , WO claim 4 , CoO claim 4 , CuO claim 4 , and NbO.6. The method of claim 1 , wherein the transition metal dopant includes at least one element selected from the group consisting of Ni claim 1 , Ti claim 1 , Hf claim 1 , Zr claim 1 , Zn claim 1 , Cu claim 1 , W claim 1 , Co claim 1 , and Nb.7. The method of claim 1 , wherein the transition metal dopant is concentrated in a grain boundary in the resistive layer to form a filament as a current path.8. The method of claim 1 , wherein the resistive layer is formed of NiO at an oxygen partial ...

LIQUID-CRYSTALLINE MEDIUM

The present invention relates to a liquid-crystalline medium, characterised in that it contains 6. A liquid-crystalline medium according to claim 1 , wherein the proportion of the compounds of formula I in the mixture as a whole is from 2 to 30% by weight based on the total mixture.7. A liquid-crystalline medium according to claim 1 , which contains <5% by weight of a polymerizable compound based on the liquid crystalline mixture.8. A method of achieving an electro-optical effect comprising applying an electric signal to a liquid crystalline medium of .9. An electro-optical liquid-crystal display containing a liquid-crystalline medium according to .10. An electro-optical liquid-crystal display according to claim 9 , which is a TN claim 9 , TN-TFT claim 9 , FFS or IPS display.11. A liquid-crystalline medium according to claim 3 , wherein Pand Pdenote acrylate or methacrylate.13. A liquid-crystalline medium according to claim 3 , wherein P denotes vinyloxy claim 3 , acrylate claim 3 , methacrylate claim 3 , fluoroacrylate claim 3 , chloroacrylate claim 3 , oxetane or epoxide.14. A liquid-crystalline medium according to claim 3 , wherein Zis —CFO—.15. A liquid-crystalline medium according to claim 3 , wherein Zis a single bond.16. A liquid-crystalline medium according to claim 3 , wherein L is F.17. A liquid-crystalline medium according to claim 3 , wherein Ris n-alkyl claim 3 , n-alkoxy claim 3 , n-oxaalkyl claim 3 , n-fluoroalkyl claim 3 , n-fluoroalkoxy or n-alkenyl claim 3 , each having up to 6 carbon atoms. The present invention relates to a liquid-crystalline medium containing at least one polymerisable compound, to the use thereof for electro-optical purposes, and to display devices containing this medium.Liquid crystals are used principally as dielectrics in display devices, since the optical properties of such substances can be modified by an applied voltage. Electro-optical devices based on liquid crystals are extremely well known to the person skilled in the ...

LIQUID-CRYSTALLINE MEDIUM

The present invention relates to a liquid-crystalline medium, characterised in that it contains 6. A liquid-crystalline medium according to claim 1 , wherein the proportion of the compounds of formula I in the mixture as a whole is from 2 to 30% by weight based on the total mixture.7. A liquid-crystalline medium according to claim 1 , which contains <5% by weight of a polymerizable compound based on the liquid crystalline mixture.8. A method of achieving an electro-optical effect comprising applying an electric signal to a liquid crystalline medium of .9. An electro-optical liquid-crystal display containing a liquid-crystalline medium according to .10. An electro-optical liquid-crystal display according to claim 9 , which is a TN claim 9 , TN-TFT claim 9 , FFS or IPS display.11. A liquid-crystalline medium according to claim 3 , wherein Pand Pdenote acrylate or methacrylate.13. A liquid-crystalline medium according to claim 3 , wherein P denotes vinyloxy claim 3 , acrylate claim 3 , methacrylate claim 3 , fluoroacrylate claim 3 , chloroacrylate claim 3 , oxetane or epoxide.14. A liquid-crystalline medium according to claim 3 , wherein Zis —CFO—.15. A liquid-crystalline medium according to claim 3 , wherein Zis a single bond.16. A liquid-crystalline medium according to claim 3 , wherein L is F.17. A liquid-crystalline medium according to claim 1 , wherein Ris n-alkyl claim 1 , n-alkoxy claim 1 , n-oxaalkyl claim 1 , n-fluoroalkyl claim 1 , n-fluoroalkoxy or n-alkenyl claim 1 , each having up to 6 carbon atoms and Xis F claim 1 , Cl claim 1 , CF claim 1 , OCFor OCHF.18. A liquid-crystalline medium according to claim 1 , which contains a compound of formula IX to XV.19. A liquid-crystalline medium according to claim 1 , which contains a compound of formula XVI to XX.20. A liquid-crystalline medium according to claim 1 , which contains a compound of formula XXIII. The present invention relates to a liquid-crystalline medium containing at least one polymerisable compound ...

LIQUID-CRYSTALLINE MEDIUM

The present invention relates to a liquid-crystalline medium, characterised in that it contains 6. A liquid-crystalline medium according to claim 1 , wherein the proportion of the compounds of formula I in the mixture as a whole is from 2 to 30% by weight based on the total mixture.7. A liquid-crystalline medium according to claim 1 , which contains <5% by weight of a polymerizable compound based on the liquid crystalline mixture.8. A method of achieving an electro-optical effect comprising applying an electric signal to a liquid crystalline medium of .9. An electro-optical liquid-crystal display containing a liquid-crystalline medium according to .10. An electro-optical liquid-crystal display according to claim 9 , which is a TN claim 9 , TN-TFT claim 9 , FFS or IPS display.11. A liquid-crystalline medium according to claim 3 , wherein Pand Pdenote acrylate or methacrylate.13. A liquid-crystalline medium according to claim 3 , wherein P denotes vinyloxy claim 3 , acrylate claim 3 , methacrylate claim 3 , fluoroacrylate claim 3 , chloroacrylate claim 3 , oxetane or epoxide.14. A liquid-crystalline medium according to claim 3 , wherein Zis —CFO—.15. A liquid-crystalline medium according to claim 3 , wherein Zis a single bond.16. A liquid-crystalline medium according to claim 3 , wherein L is F.17. A liquid-crystalline medium according to claim 1 , wherein Ris n-alkyl claim 1 , n-alkoxy claim 1 , n-oxaalkyl claim 1 , n-fluoroalkyl claim 1 , n-fluoroalkoxy or n-alkenyl claim 1 , each having up to 6 carbon atoms.18. A liquid-crystalline medium according to claim 1 , which contains a compound of formula XXIV-1.19. A liquid-crystalline medium according to claim 1 , which contains a compound of formula XXIV-2.20. A liquid-crystalline medium according to claim 1 , which contains a compound of formula XXIV-3 or XXIV-4. The present invention relates to a liquid-crystalline medium containing at least one polymerisable compound, to the use thereof for electro-optical purposes, ...

APPARATUS AND METHOD FOR MANAGING VARIABLE MULTICAST AND BROADCAST SERVICE ZONES IN MBS SERVER

An apparatus and method for managing variable MBS zones in an MBS server are provided. The method variably sets an MBS zone based on a characteristic where user movement between MBS zones and content preference are changed depending on time and environment, and thereby enables a safer and faster shift of an MBS zone, thus effectively providing high-quality multimedia service in a mobile environment. 1. An apparatus for managing variable MBS zones in an MBS server , comprising:an information collector configured to collect content use rates of neighboring base stations adjacent to a specific base station; andan MBS zone manager configured to manage the variable MBS zones based on the content use rates of neighboring base stations adjacent to the specific base station.2. The apparatus of claim 1 , wherein when a mobile terminal performs handover from the specific base station to a neighboring base station claim 1 ,the MBS zone manager compares an average value of content use rates of the neighboring base stations adjacent to the specific base station and a service threshold value, and, when the average value of content use rates of neighboring base stations adjacent to the specific base station is equal to or greater than the service threshold value, the MBS zone manager maintains an MBS zone without releasing an MBS channel allocated to the specific base station.3. The apparatus of claim 2 , wherein when the mobile terminal performs handover from the specific base station to the neighboring base station claim 2 ,the MBS zone manager compares the average value of content use rates of the neighboring base stations adjacent to the specific base station and the service threshold value, and, when the average value of content use rates of neighboring base stations adjacent to the specific base station is less than the service threshold value, the MBS zone manager releases the MBS channel allocated to the specific base station to vary the MBS zone.4. The apparatus of claim ...

BACKWASHING SUCTION DEVICE AND FABRIC FILTERING APPARATUS USING THE SAME

A backwashing suction device, a fabric filtering apparatus using the same, and a process of removing foreign materials attached to filter cloths of the disc-shaped filter pieces are disclosed. The backwashing suction device is separated from the disc-shaped filter pieces, thereby preventing the filter cloths of the disc-shaped filter pieces from being pressed down for a long time by the backwashing suction device. This is to improve the filtering efficiency of the filter cloths and to prolong a service life of the filter cloths. Further, a backwashing suction device is configured to be separated from disc-shaped filter pieces using a buoyant force, thereby providing a simple structure and a smooth operation. This is to enable close contact with or separation from the disc-shaped filter pieces, and a fabric filtering apparatus using the same. 16.-. (canceled)7. A backwashing suction device for a fabric filtering apparatus , which is installed in a filter tank and removes at least one foreign material attached to a surface of at least one disc-shaped filter piece rotated along with a rotary shaft in a backwashing mode , the backwashing suction device comprisinga floating means that receives external air to generate a buoyant force therein when the foreign material attached to the at least one disc-shaped filter piece are not removed, and separates the backwashing suction device from the at least one disc-shaped filter piece,wherein the floating means includes a floating container in which a floating chamber, one wall of which is open, is formed and which is mounted on the backwashing suction device, and a feed pipe which is connected with the floating container and feeds/discharges the external air to/from the floating chamber.8. The backwashing suction device according to claim 7 , wherein the backwashing suction device is installed so as to be in close contact with the at least one disc-shaped filter piece while being elastically supported.9. The backwashing suction ...

VERTICAL LIGHT-EMITTING DEVICES HAVING PATTERNED EMITTING UNIT AND METHODS OF MANUFACTURING THE SAME

Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. 1. A method of manufacturing a light-emitting device , the method comprising:stacking a buffer layer and a semiconductor layer on a plurality of protrusions formed in an array pattern, wherein the plurality of protrusions are formed on a first substrate;filling a trench between the plurality of protrusions with an insulating layer up to a height of the semiconductor layer;stacking a first electrode layer to cover the semiconductor layer and the insulating layer on the semiconductor layer, and a bonding metal layer;bonding a second substrate on the bonding metal layer;removing the first substrate and the buffer layer; andforming a second electrode on the insulating layer to contact the semiconductor layer.2. The method of claim 1 , further comprising:forming a transparent electrode layer between the semiconductor layer and the second electrode.3. The method of claim 1 , wherein stacking of the buffer layer and the semiconductor layer comprises:forming the plurality of protrusions in the pattern array by patterning the first substrate; andsequentially stacking the buffer layer and the semiconductor layer on the plurality of protrusions.4. The method of claim 1 , wherein stacking of the buffer layer and the semiconductor layer comprises:sequentially stacking the buffer layer and the semiconductor layer on the first substrate; andsequentially patterning the semiconductor layer, the buffer layer, and a surface of the first substrate.5. A method of manufacturing a ...

ORGANIC LIGHT-EMITTING DEVICE

An organic light-emitting device including: a substrate; a transparent cathode on the substrate; an anode disposed opposite to the cathode; an emission layer between the cathode and the anode; and a first electron transport layer between the cathode and the emission layer and including an imidazole derivative. 1. An organic light-emitting device comprising:a substrate;a transparent cathode on the substrate;an anode disposed opposite to the cathode;an emission layer between the cathode and the anode; anda first electron transport layer between the cathode and the emission layer and comprising an imidazole derivative.2. The organic light-emitting device of claim 1 , wherein the cathode comprises indium tin oxide(ITO) claim 1 , indium zinc oxide (IZO) claim 1 , zinc oxide (ZnO) claim 1 , aluminum-doped zinc oxide (AZO) claim 1 , indium oxide (InO) claim 1 , or tin oxide (SnO).3. The organic light-emitting device of claim 1 , wherein the first electron transport layer comprises Alq(tris(8-hydroxyquinolinato)aluminum) claim 1 , BCP (2 claim 1 ,9-dimethyl-4 claim 1 ,7-diphenyl-1 claim 1 ,10-phenanthroline) claim 1 , Bphen (4 claim 1 ,7-diphenyl-1 claim 1 ,10-phenanthroline) claim 1 , TAZ (3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1 claim 1 ,2 claim 1 ,4-triazole) claim 1 , NTAZ (4-(naphthalen-1-yl)-3 claim 1 ,5-diphenyl-4H-1 claim 1 ,2 claim 1 ,4-triazole) claim 1 , tBu-PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1 claim 1 ,3 claim 1 ,4-oxadiazole) claim 1 , BAlq (bis(2-methyl-8-quinolinolato-N1 claim 1 ,O8)-(1 claim 1 ,1′-biphenyl-4-olato)aluminum) claim 1 , Bebq2 (beryllium bis(benzoquinolin-10-olate) claim 1 , or ADN (9 claim 1 ,10-di(naphthalene-2-yl)anthracene).4. The organic light-emitting device of claim 1 , wherein the imidazole derivative is a DMBI (2 claim 1 ,3-dihydro-1 claim 1 ,3-dimethyl-2-phenyl-1H-benzo[d]imidazole) derivative.5. The organic light-emitting device of claim 4 , wherein the DMBI derivative comprises DMBI claim 4 , CI-DMBI (2-(2 claim 4 ,4- ...

METHOD OF MANUFACTURING LARGE AREA GALLIUM NITRIDE SUBSTRATE

A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate. 1. A method of manufacturing a large area gallium nitride (GaN) substrate , the method comprising:forming a buffer layer on a silicon substrate;forming an insulation layer pattern on a rim of a top surface of the buffer layer;growing a GaN layer on the buffer layer; andremoving the insulation layer pattern and corresponding portions of the GaN layer and the silicon substrate.2. The method of claim 1 , wherein the forming of the buffer layer includes using a metal organic chemical vapor deposition (MOCVD) method.3. The method of claim 1 , wherein the forming of the buffer layer includes forming at least one of a single layer of any one of aluminum nitride (AlN) claim 1 , tantalum nitride (TaN) claim 1 , titanium nitride (TiN) claim 1 , hafnium nitride (HfN) claim 1 , GaN claim 1 , and aluminum gallium nitride (AlGaN) claim 1 , and a triple layer of AlN claim 1 , AlGaN claim 1 , and GaN.4. The method of claim 1 , wherein the forming of the insulation layer pattern comprises:forming a silicon oxide layer on the buffer layer; andpatterning the silicon oxide layer.5. The method of claim 1 , wherein the forming of the insulation layer pattern includes forming one of silicon oxide claim 1 , silicon nitride claim 1 , alumina claim 1 , and hafnium oxide.6. The method of claim 1 , wherein the forming of the insulation layer pattern includes forming the insulation layer pattern to a thickness from about 5 μm to about 2 mm.7. The method of claim 1 , wherein the forming of the insulation layer pattern includes forming the insulation layer pattern to a width of from about 0.5 mm to about 5 mm.8. The method of claim 1 , wherein the ...

Polymer battery cell and electronic device comprising same

Disclosed are a polymer battery cell capable of increasing cell capacity due to efficient use of space by efficiently placing a protection circuit device, and thus of effectively protecting the protection circuit device from an external environment, and an electronic device including the polymer battery cell. The polymer battery cell includes an electrode body including a positive plate, a negative plate, and a separator provided between the positive and negative plates, cell taps including a positive tap connected to and protruding from the positive plate, and a negative tap connected to and protruding from the negative plate, and a battery protection circuit module electrically connected to the cell taps. The polymer battery cell further includes a pouch receiving the electrode body, the cell taps, and the battery protection circuit module therein, and being made of a flexible material.

NONVOLATILE MEMORY TRANSISTOR AND DEVICE INCLUDING THE SAME

Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic. 1. A nonvolatile memory transistor comprising:a channel element;a gate electrode corresponding to the channel element;a gate insulation layer between the channel element and the gate electrode;an ionic species moving layer between the gate insulation layer and the gate electrode; anda source and a drain separated from each other with respect to the channel element, wherein a motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode, wherein a threshold voltage changes according to the motion of the ionic species, and wherein the nonvolatile memory transistor has a multi-level characteristic.2. The nonvolatile memory transistor of claim 1 , wherein the ionic species moving layer comprises a variable resistance material.3. The nonvolatile memory transistor of claim 1 , wherein the ionic species moving layer comprises a bipolar memory layer.4. The nonvolatile memory transistor of claim 1 , wherein the ionic species moving layer comprises at least one of PrCaMnO (PCMO) claim 1 , Ti oxide claim 1 , Ta oxide claim 1 , Ni oxide claim 1 , Zn oxide claim 1 , W oxide claim 1 , Co oxide claim 1 , Nb oxide claim 1 , TiNi oxide claim 1 , LiNi oxide claim 1 , InZn oxide claim 1 , V oxide claim ...

APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole. 1. An apparatus for manufacturing a substrate , the apparatus comprising:a deposition chamber housing that accommodates a growth substrate;a first supply to supply a deposition gas for forming a target substrate on the growth substrate into the deposition chamber housing;a susceptor to support the growth substrate and exposing a rear surface of the growth substrate;an inner liner connected to the susceptor; anda second supply to supply an etch gas to the rear surface of the growth substrate,wherein the inner liner is to isolate the etch gas from the deposition gas and guide the etch gas towards the rear surface of the growth substrate, a center hole to expose the rear surface of the growth substrate, and', 'a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole., 'wherein the susceptor includes'}2. The apparatus as claimed in claim 1 , wherein the support protrusion protrudes from the inner sidewall and extends along a circumference of the inner sidewall.3. The apparatus as claimed in claim 1 , wherein the support protrusion ...

INTRAOSSEOUS DEVICE HAVING RETRACTABLE MOTOR/STYLET ASSEMBLY AND AUTOMATIC STYLET POINT COVER UPON RETRACTION OPERATION

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising a handle and a barrel having a closed end and an open end , said barrel further comprising an internally disposed integrated drill motor and stylet assembly , an external manual implement to initially move said integrated drill motor and stylet assembly towards said barrel opening , an internal implement to retract said integrated drill motor and stylet assembly towards the closed end of said barrel subsequent to movement thereof towards said barrel opening , and a cover for said stylet , wherein said cover for said stylet automatically covers said stylet upon retraction subsequent to manual movement of said integrated drill motor and stylet towards said barrel opening , wherein said retraction is operated through automatic action of said internal retraction implement.2. The intraosseous drill device further comprising a cannula implement temporarily connected with said stylet or said integrated drill motor and stylet assembly , wherein said cannula is ...

CIRCUIT FOR COMPENSATING A RIPPLE, METHOD OF DRIVING DISPLAY PANEL USING THE CIRCUIT AND DISPLAY APPARATUS HAVING THE CIRCUIT

A circuit includes a reference signal generating part configured to generate a plurality of reference signals having levels different from each other, a comparing part configured to compare a ripple signal with the reference signals to determine a level of the ripple signal, a compensating signal generating part configured to generate a compensation ripple signal corresponding to the level of the ripple signal, where the compensation ripple signal has a phase opposite to the ripple signal, and a push-pull circuit configured to stabilize the compensation ripple signal. 1. A circuit for compensating ripple , the circuit comprising:a reference signal generating part configured to generate a plurality of reference signals having levels different from each other;a comparing part configured to compare a ripple signal with the reference signals to determine a level of the ripple signal;a compensating signal generating part configured to generate a compensation ripple signal corresponding to the level of the ripple signal, wherein the compensation ripple signal has a phase opposite to the ripple signal; anda push-pull circuit configured to stabilize the compensation ripple signal.2. The circuit of claim 1 , whereinthe comparing part comprises a plurality of comparators,wherein each of the comparators compares two reference signals among the reference signals with the ripple signal, and determines whether the level of the ripple signal is between levels of the two reference signals.3. The circuit of claim 2 , whereinthe compensating signal generating part comprises a plurality of amplifiers,wherein the amplifiers receive output signals of the comparators, respectively, andthe amplifiers have gain values different from each other.4. The circuit of claim 3 , whereinthe compensating signal generating part generates the compensation ripple signal through an amplifier having a gain value corresponding to the level of the ripple signal among the amplifiers.5. A method of driving a ...

HAIR MEASUREMENT TOOL

To provide an index for objectively measuring length of hair or hair bundle, and enable accurate hair cut at a desired length. A hair measurement tool includes a plate-shaped elongated member. A curved concave part is formed at one end part of the member and scale lines are indicated on one surface of the member with intervals at 10 mm unit from the one end part. In the hair measurement tool, V-shaped notches are formed in both side surfaces corresponding to each position of the scale lines. The hair measurement tool is used for, by placing the one end part on a head, performing hair cut with hairdressing scissors positioned at the notch (position controlled) after measuring with the scale lines the hair (or hair bundle) picked from the head. 1. A hair measurement tool , comprising:an elongated member where scale lines are indicated with intervals at a predetermined length unit from one end in a length direction thereof, and the elongated member is configured, by placing a one end part on a scalp, to be used for performing hair length measurements based on the scale lines, characterized in thata concave part is formed in the one end part, anda gap between the concave part and the scalp occurs by placing the one end part on the scalp so that both end parts in a width direction of the concave part contact with the scalp.2. A hair measurement tool , comprising:the concave part and the both end parts in the width direction of the concave part are formed so that a first imaginary straight line connecting the both end parts is inclined against the length direction of the elongated member.3. The hair measurement tool of claim 2 , characterized in thata second concave part is formed in another end part in the length direction of the elongated member, andthe second concave part at the other end part and both end parts in the width direction of the second concave part at the other end part are formed so that a second imaginary straight line connecting the both end parts in a ...

SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING HOLE INJECTION LAYER

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type. 1. A semiconductor light emitting device comprising:a first semiconductor layer, the first semiconductor layer being doped a first conductive type and including dislocations therein;a pit enlarging layer on the first semiconductor layer;an active layer on the pit enlarging layer, an upper surface of the pit enlarging layer and side surfaces of the active layer defining pits having sloped surfaces on the dislocations, the pits being reverse pyramidal spaces;a hole injection layer on a top surface of the active layer and the sloped surfaces of the pits; anda second semiconductor layer on the hole injection layer, the second semiconductor layer being is doped a second conductive type that is different than the first conductive type.2. The semiconductor light emitting device of claim 1 , whereinthe active layer has a multiple quantum well (MQW) structure including a plurality of barrier layers and a plurality of quantum well layer that are alternately stacked on each other.3. The semiconductor light emitting device of claim 2 , wherein the hole injection layer contacts all of the plurality of quantum well layers of the active layer along the sloped surfaces of the pits.4. The semiconductor light emitting device of claim 1 , wherein a ...

INTRAOSSEOUS DEVICE HAVING INTEGRATED MOTOR AND STYLET

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An integrated motor/stylet assembly for an intraosseous drill wherein said motor is a direct drive motor and is permanently connected with said stylet having a base attached to said motor and a pointed end for drilling within a target bone , wherein said assembly is further configured to move together within said intraosseous drill to position for drilling operations.2. The device of further including a gearbox permanently connected to said assembly. This application is a continuation-in-part of pending U.S. patent application Ser. No. 16/125,767, filed on Sep. 10, 2018, which claims the benefit of expired U.S. Provisional Patent Application Nos. 62/556,397, filed on Sep. 9, 2017, and 62/566,498, filed on Oct. 1, 2017. The entirety of the parent application and both provisional applications are herein incorporated by reference.The disclosure relates to a portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject ...

GLASS PRODUCT MANUFACTURING APPARATUS

A glass product manufacturing apparatus includes a stirring vessel disposed in a chamber, a conduit arranged in the chamber and having an inner space through which molten glass from the stirring vessels flows, and a nozzle disposed in the chamber adjacent to the conduit and configured to jet a fluid around the conduit. Accordingly, cooling efficiency and manufacturing efficiency of the glass manufacturing apparatus may be improved. 1. A glass manufacturing apparatus comprising:a stirring vessel disposed in a chamber and configured to stir molten glass;a conduit arranged in the chamber and having an inner space through which molten glass from the stirring vessel flows; anda nozzle disposed in the chamber adjacent to the conduit and configured to jet a fluid around the conduit.2. The glass manufacturing apparatus of claim 1 , further comprising:an environment control unit configured to adjust environment parameters inside the chamber.3. The glass manufacturing apparatus of claim 2 , wherein the nozzle is connected to a nitrogen source.4. The glass manufacturing apparatus of claim 3 , wherein the nitrogen source is configured to provide nitrogen claim 3 , which has not passed through the environmental control unit claim 3 , to the nozzle.5. The glass manufacturing apparatus of claim 2 , wherein the environment control unit is connected to the chamber and further configured to supply the chamber with a fluid having a predetermined humidity claim 2 , temperature claim 2 , and atmospheric composition ratio.6. The glass manufacturing apparatus of claim 2 , wherein the environment control unit is further configured to provide a fluid to the chamber claim 2 , wherein the fluid jetted by the nozzle and the fluid provided by the environment control unit are different from each other.7. The glass manufacturing apparatus of claim 6 , wherein the fluid jetted by the nozzle and the fluid provided by the environmental control unit differ in at least one of a temperature claim 6 , a ...

ELECTRONIC DEVICE AND METHOD FOR SENDING RESPONSE MESSAGE ACCORDING TO CURRENT STATUS

An electronic device and a method for sending a response message according to a current status are provided. An operating method of the electronic device includes determining whether a received message is confirmed within a preset time, when the received message is not confirmed within the preset time, determining whether a contact number of a sender electronic device is a preset contact number, and when the contact number of the sender electronic device is the preset contact number, sending an automatic response message to the sender electronic device corresponding to a preset automatic response message status. 1. An operating method of an electronic device , the method comprising:determining whether a received message is confirmed within a preset time;when the received message is not confirmed within the preset time, determining whether a contact number of a sender electronic device is a preset contact number; andwhen the contact number of the sender electronic device is the preset contact number, sending an automatic response message to the sender electronic device corresponding to a preset automatic response message status.2. The method of claim 1 , further comprising:determining whether the electronic device is turned on; andwhen the electronic device is turned off, receiving at least one message after the electronic device is turned on.3. The method of claim 2 , further comprising:when the electronic device is turned on, determining whether a current operation mode is set to a power-save mode; andwhen the current operation mode is set to the power-save mode, receiving at least one message after the power-save mode is switched to a normal mode.4. The method of claim 2 , further comprising:when the electronic device is turned on, determining whether a current operation mode is set to a power-save mode; andwhen the current operation mode is not set to the power-save mode, receiving a message.5. The method of claim 1 , further comprising:when the received message ...

LIGHT-EMITTING DIODE (LED) DEVICE

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the plurality of light-emitting structures from each other;a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structure; anda partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.2. The LED device of claim 1 , wherein the quantum dots include a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell.3. The LED device of claim 2 , whereinthe core includes CdSe or InP, and the shell includes ZnS or ZnSe.4. ...

LIGHT-EMITTING DIODE (LED) DEVICE

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the plurality of light-emitting structures from each other;a plurality of wavelength transformers on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures; anda partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.3. The LED device of claim 1 , further comprising:an uneven structure on a surface of a light-emitting structure, of ...

DISPOSABLE SINGLE-USE INTRAOSSEOUS DEVICE WITH BATTERY REMOVAL DOORS HAVING LIVING HINGE ON HANDLE

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising separable components , wherein said components include a barrel housing a drill motor and stylet for drilling operation into a target bone and a plastic handle including a top portion , a bottom portion , and four side portions with one front side , one rear side , and two opposing lateral sides , said handle further containing therein at least one battery as a power source for said drill motor; wherein said separable plastic handle is disposable subsequent to drill utilization and comprises a battery removal portal having an integrated hinge therein to retain said portal with said handle subsequent to battery removal therefrom.2. The device of wherein said integrated hinge of said battery removal portal is present on the rear side thereof allowing for at least some of said rear side and said bottom portion of said handle to open for battery removal purposes.3. The device of wherein said integrated hinge of said battery removal portal is present on the bottom ...

SEMICONDUCTOR LIGHT EMITTING DEVICES HAVING AN UNEVEN EMISSION PATTERN LAYER AND METHODS OF MANUFACTURING THE SAME

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer. 1. A method of manufacturing a light-emitting device (LED) , the method comprising:forming a buffer layer on a first substrate;sequentially forming a first semiconductor layer of a first impurity type, an active layer, and a second semiconductor layer of the second impurity type on the buffer layer;forming a first contact layer contacting the first semiconductor layer, and a second contact layer contacting the second semiconductor layer; andforming an emission pattern layer by removing the first substrate and patterning the buffer layer.2. The method of claim 1 , wherein the forming of the first and second contact layers comprises:forming a first through hole penetrating through the second semiconductor layer and the active layer to expose a portion of the first semiconductor layer;forming an insulating layer on a surface of the second semiconductor layer and a sidewall of the first through hole;forming the first contact layer by filling the first through hole with metal; andforming the second contact layer by using metal on a portion of the second semiconductor layer, the second semiconductor layer being exposed by etching a portion of the insulating layer on the second semiconductor layer, and covering the second contact layer with an insulator.3. The method of claim 2 , further comprising forming a metal layer on the insulating layer and the first contact layer.4. The method of claim 3 , further comprising bonding a second substrate on the metal layer and removing the first substrate.5. The method of claim ...

METAL FILTER FOR PURIFYING EXHAUST GAS FROM SHIP, AND PREPARATION METHOD THEREOF

The present invention relates to a metal filter for purifying the exhaust gas from a ship, and a preparation method thereof. The purpose of the present invention is to provide: a metal filter for purifying the exhaust gas from a ship, capable of reducing nitrogen oxide by 85% or more at 250-300° C.; and a preparation method thereof. The metal filter for removing nitrogen oxide contained in the exhaust gas from a ship of the present invention comprises an integrated catalyst, wherein a metal substrate comprising irregularities is coated with a low temperature active catalyst in which vanadium (V), tungsten (W) and alumina sol are supported in a Ti-pillared clay (Ti-PILC) powdered support. 1. A metal filter for purifying an exhaust gas from a ship , suitable for use in removing nitrogen oxide from the exhaust gas , the metal filter comprising a metal substrate having irregularities and a low-temperature active catalyst applied onto the metal substrate and comprising Ti-PILC (Pillared Clay) as a powder support and vanadium (V) , tungsten (W) and alumina sol supported thereon.2. The metal filter of claim 1 , wherein the low-temperature active catalyst comprises claim 1 , based on 100 parts by weight of Ti-PILC (Pillared Clay) claim 1 , 1˜10 parts by weight of V claim 1 , 1˜5 parts by weight of W claim 1 , and 5˜20 parts by weight of alumina sol.3. The metal filter of claim 1 , wherein the low-temperature active catalyst further comprises claim 1 , based on 100 parts by weight of Ti-PILC claim 1 , 1˜5 parts by weight of cerium (Ce) claim 1 , 5˜20 parts by weight of titanium dioxide (TiO) claim 1 , 1˜6 parts by weight of iron (Fe) claim 1 , and 1˜5 parts by weight of sulfur dioxide (SO).4. A method of manufacturing a metal filter for purifying an exhaust gas from a ship claim 1 , suitable for use in removing nitrogen oxide from the exhaust gas claim 1 , comprising:forming irregularities on a metal substrate; andimmersing the metal substrate having irregularities in a ...

SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR BUFFER STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer. 1. A semiconductor buffer structure comprising:a silicon substrate;a nucleation layer on the silicon substrate; and a first layer including a nitride semiconductor material having a uniform composition ratio;', 'a second layer, including a same material as the nucleation layer, on the first layer; and', 'a third layer, including a same material and a same composition ratio as the first layer, on the second layer., 'a buffer layer on the nucleation layer, the buffer layer including2. The semiconductor buffer structure of claim 1 , wherein the nucleation layer comprises AIN.3. The semiconductor buffer structure of claim 1 , wherein the buffer layer further comprises:a fourth layer, including the same material as the nucleation layer, on the third layer; anda fifth layer, including the same material and the same ratio as the first layer, on the fourth layer.4. The semiconductor buffer structure of claim 1 , wherein a thickness of the first layer is in a range of 10 nm-1000 nm.5. The semiconductor buffer structure of claim 1 , wherein the first layer comprises BAlInGaN (0≦x<1 claim 1 , 0 Подробнее

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer. 160-. (canceled)61. A method of manufacturing a semiconductor device , the method comprising:{'sup': 17', '−3', '20', '−3, 'forming a silicon-based substrate having a doping concentration in a range of between about 5×10cmand about 10cmby doping the silicon-based substrate with an impurity;'}forming a first buffer layer formed of AlN as a nucleation layer on the silicon-based substrate;forming a second buffer layer formed of AlGaN on the first buffer layer;forming a nitride stack on the second buffer layer;forming a device layer on the nitride stack; andremoving the silicon-based substrate.62. A method of claim 61 , wherein the silicon-based substrate is a silicon substrate claim 61 , or a silicon carbide substrate.63. The method of wherein the silicon-based substrate is doped with a p-type impurity.64. The method of claim 61 , wherein the silicon-based substrate is a silicon substrate and formed by doping a silicon ingot with a p-type impurity during a growth of the silicon ingot.65. The method of claim 61 , wherein the impurity doping the silicon-based substrate are mainly distributed near an upper surface of the silicon-based substrate.6665. The method of claim 61 , wherein a lower portion of the silicon-based substrate is undoped.6761. The method of claim 61 , wherein the silicon-based substrate is a silicon substrate claim 61 , and is obtained by doping a silicon wafer with the impurity through ion implantation.68. The method of claim 61 , wherein the device layer is a light-emitting device.69. The method of claim 61 , wherein the nitride stack is undoped.70. The method of claim 61 , wherein forming ...

METHOD OF MANUFACTURING A GALLIUM NITRIDE SUBSTRATE

In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed. 1. A method of manufacturing a gallium nitride (GaN) substrate , the method comprising:forming a capping layer on a first surface of a silicon substrate;forming a buffer layer on a second surface of the silicon substrate, the second surface being opposite the first surface;forming a GaN substrate on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process; andremoving the capping layer and the silicon substrate.2. The method of claim 1 , wherein the removing the capping layer removes the capping layer by a chlorine-based etching gas.3. The method of claim 1 , wherein the forming a capping layer forms the capping layer of at least one of titanium (Ti) claim 1 , zirconium (Zr) claim 1 , hafnium (Hf) claim 1 , molybdenum (Mo) claim 1 , manganese (Mn) claim 1 , nickel (Ni) claim 1 , copper (Cu) claim 1 , zinc (Zn) claim 1 , chromium (Cr) claim 1 , Gallium (Ga) claim 1 , aluminum (Al) claim 1 , indium (In) claim 1 , and a nitride thereof.4. The method of claim 1 , wherein the forming a capping layer forms the capping layer by an atomic layer deposition (ALD) process claim 1 , a sputtering process or a chemical vapor deposition (CVD) process.5. The method of claim 1 , wherein the forming a GaN substrate forms the GaN substrate at a temperature of about 950° C. to 1200° C. by performing the HVPE process.6. The method of claim 1 , wherein the removing the capping layer and the silicon substrate removes the capping layer and the silicon substrate by the same dry etching process using a chlorine-based etching gas.7. The method of claim 6 , wherein ...

PHARMACEUTICAL COMPOSITION FOR PREVENTING OR TREATING CANCER

The present invention relates to a pharmaceutical composition for preventing or treating cancer, comprising, as an active ingredient, miRNA comprising a seed sequence represented by the nucleotide sequence of any one of SEQ ID NOs: 1 to 3; an expression vector comprising the miRNA; or a transformant transformed with the expression vector. The miRNA provided by the present invention can effectively inhibit growth of cancer cells as well as cancer stem cells so that cancer is prevented and/or treated; and, furthermore, the miRNA can also prevent drug resistance, metastasis, and recurrence of cancer. 127.-. (canceled)28. A method for preventing or treating cancer , the method comprising administeringmiRNA as an active compound to a patient in need thereof, wherein the miRNA comprises a seed sequence represented by the nucleotide sequence of any one of SEQ ID NOs: 1 to 3;an expression vector comprising the miRNA; ora transformant transformed with the expression vector.29. The method according to claim 28 , wherein the miRNA comprises the nucleotide sequence represented by any one of SEQ ID NOs: 1 to 3 and consists of a consecutive nucleotide sequence having a total of 14 to 29 nucleotides.30. The method according to claim 28 , wherein the miRNA includes at least one of the following:(1) at least one miRNA selected from the group consisting of hsa-miR-328-3p miRNA, hsa-miR-6514-5p miRNA, and hsa-miR-503-3p miRNA; and(2) miRNA comprising the nucleotide sequence represented by any one of SEQ ID NOs: 1 to 3, the miRNA consisting of a nucleotide sequence that has at least 90% homology with the nucleotide sequence of (1).31. The method according to claim 30 , wherein the hsa-miR-328-3p miRNA consists of the nucleotide sequence of SEQ ID NO: 4.32. The method according to claim 30 , wherein the hsa-miR-6514-5p miRNA consists of the nucleotide sequence of SEQ ID NO: 5.33. The method according to claim 30 , wherein the hsa-miR-503-3p miRNA consists of the nucleotide sequence of ...

BATTERY PROTECTION CIRCUIT MODULE PACKAGE, BATTERY PACK AND ELECTRONIC DEVICE INCLUDING SAME

Provided are a battery protection circuit module package capable of achieving high integration and size reduction, and a battery pack and an electronic device including the same. The battery protection circuit module package includes a lead frame including a plurality of leads space apart from each other, and capable of being coupled and electrically connected to electrode tabs of a battery cell, battery protection circuit devices mounted on the lead frame and including a positive temperature coefficient (PTC) structure, and an encapsulant for encapsulating the battery protection circuit devices to expose a part of the lead frame. 1. A battery protection circuit module package comprising:a lead frame comprising a plurality of leads space apart from each other, and capable of being coupled and electrically connected to electrode tabs of a battery cell;battery protection circuit devices mounted on the lead frame and comprising a positive temperature coefficient (PTC) structure; andan encapsulant for encapsulating the battery protection circuit devices to expose part of the lead frame.2. The battery protection circuit module package of claim 1 , wherein the PTC structure comprisesa PTC device; anda first metal layer and a second metal layer respectively coupled to two sides of the PTC device,wherein the first and second metal layers are respectively mounted on the leads spaced apart from each other.3. The battery protection circuit module package of claim 1 , wherein the lead frame comprises:a first internal connection terminal lead and a second internal connection terminal lead respectively provided at two edges, exposed by the encapsulant, and capable of being coupled and electrically connected to the electrode tabs of the battery cell;external connection terminal leads provided between the first and second internal connection terminal leads and serving as a plurality of external connection terminals; anddevice mounting leads provided between the first and second ...

PORTABLE ELECTRONIC DEVICE AND SCREEN CONTROL METHOD THEREFOR

A screen control method for a portable electronic device is provided. The screen control method includes receiving a touch event; moving a foreground screen according to the received touch event; and outputting a virtual or soft button corresponding to a hardware button of the portable electronic device at a position close to the moved foreground screen in a display area. 1. A screen control method for a portable electronic device , the screen control method comprising:receiving a touch event;moving a foreground screen according to the received touch event; andoutputting a virtual button corresponding to a hardware button of the portable electronic device at a position close to the moved foreground screen in a display area.2. The screen control method of claim 1 , wherein outputting a virtual button comprises outputting a virtual button so that the position of the virtual button relative to the moved foreground screen corresponds to the position of the hardware button relative to a touchscreen.3. The screen control method of claim 1 , wherein a function mapped with the virtual button is the same as a function mapped with the hardware button.4. The screen control method of claim 1 , wherein receiving the touch event comprises receiving user input for activating a screen movement function.5. The screen control method of claim 4 , wherein receiving the user input for activating a screen movement function comprises receiving at least one of a touch event corresponding to a touch gesture and a motion event corresponding to a motion of the portable electronic device.6. The screen control method of claim 1 , wherein moving the foreground screen comprises translating a coordinate system of the foreground screen.7. The screen control method of claim 1 , wherein moving the foreground screen comprises:dividing the display area into multiple subregions;moving the foreground screen upon reception of the touch event; andadjusting a position of the foreground screen so that the ...

SPIN COATING APPARATUS AND SPIN COATING METHOD

A spin coating method includes rotating a wafer, moving a nozzle from a first position at a center region of the wafer to a second position at an edge region of the wafer while discharging a coating material from the nozzle toward the wafer, and stopping the nozzle at the second position and discharging the coating material from the nozzle at the second position. 1. A spin coating method , the method comprising:rotating a wafer;moving a nozzle from a first position at a center region of the wafer to a second position at an edge region of the wafer while discharging a coating material from the nozzle toward the wafer; andstopping the nozzle at the second position and discharging the coating material from the nozzle at the second position.2. The spin coating method as claimed in claim 1 , further comprising moving the nozzle from the second position to a third position at the center region of the wafer and discharging the coating material at the third position.3. The spin coating method as claimed in claim 1 , wherein moving the nozzle from the first position to the second position includes moving the nozzle in a first direction parallel to an upper surface of the wafer or in a second direction perpendicular to the first direction.4. The spin coating method as claimed in claim 1 , wherein stopping the nozzle at the second position and discharging the coating material are performed during a time period of about 0.5 sec to about 2.0 sec.5. The spin coating method as claimed in claim 1 , wherein moving the nozzle and discharging the coating material include moving the nozzle at a speed of about 100 mm/sec to about 200 mm/sec.6. The spin coating method as claimed in claim 1 , wherein discharging the coating material is performed at a rate of about 0.4 cc/sec to about 1.0 cc/sec.7. The spin coating method as claimed in claim 1 , wherein discharging the coating material includes using a coating material having a molecular weight of about 3000 to about 20000.8. The spin ...

DISPLAY APPARATUS AND METHOD OF DRIVING THE SAME

A display apparatus includes a display panel which displays an image, a compensation area determiner which divides a display area of the display panel into a compensation area and a normal area, a compensation coefficient determiner which determines a compensation coefficient corresponding to input data of the compensation area, a compensation look up table which stores a noise compensation data which compensates a luminance difference of the compensation area by an interference noise of a light-source driving signal, and a correction data calculator which calculates a correction data corresponding to the input data of the compensation area using the compensation coefficient and the noise compensation data. 1. A display apparatus comprising:a display panel which displays an image;a compensation area determiner which divides a display area of the display panel into a compensation area and a normal area;a compensation coefficient determiner which determines a compensation coefficient corresponding to input data of the compensation area;a compensation look up table which stores a noise compensation data which compensates a luminance difference of the compensation area by an interference noise of a light-source driving signal; anda correction data calculator which calculates a correction data corresponding to the input data of the compensation area using the compensation coefficient and the noise compensation data.2. The display apparatus of claim 1 , wherein the compensation area is divided into a boundary area adjacent to a boundary between the compensation area and the normal area and a remaining area except for the boundary area claim 1 , andthe compensation coefficient determiner determines a compensation coefficient of the boundary area to gradually increase by a horizontal line.3. The display apparatus of claim 1 , further comprising:a normal look up table which stores a normal compensation data which compensates input data of the normal area.4. The display ...

INTRAOSSEOUS DEVICE HAVING RETRACTABLE MOTOR/STYLET ASSEMBLY AND AUTOMATIC STYLET POINT COVER UPON RETRACTION OPERATION

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising a handle and a barrel having a closed end and an open end , said barrel further comprising an internally disposed integrated drill motor and stylet assembly , an external manual implement to initially move said integrated drill motor and stylet assembly towards said barrel opening , an internal implement to retract said integrated drill motor and stylet assembly towards the closed end of said barrel subsequent to movement thereof towards said barrel opening , and a cover for said stylet , wherein said cover for said stylet automatically covers said stylet upon retraction subsequent to manual movement of said integrated drill motor and stylet towards said barrel opening , wherein said retraction is operated through automatic action of said internal retraction implement.2. The intraosseous drill device further comprising a cannula implement temporarily connected with said stylet or said integrated drill motor and stylet assembly , wherein said cannula is ...

LIGHT-EMITTING DIODE (LED) DEVICE

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the light-emitting structures from each other;a plurality of phosphor layers on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structure; anda partition layer between the phosphor layers, such that the partition layer separates the phosphor layers from each other.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.3. The LED device of claim 1 , further comprising:an uneven structure on a surface of a light-emitting structure, of the plurality of light-emitting ...

PASSIVE SAFETY INTRAOSSEOUS DEVICE

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. A single-use , disposable intraosseous drill device , said device comprising a foldable combination of a separable barrel and handle with a connector allowing rotation thereof in relation to one another , said barrel having an open end and a closed end and comprising a single-structure motor and stylet assembly therein that is movable through utilization of a manual external implement within said housing from a location at or near said closed end towards said open end , wherein said motor/stylet assembly further including a detachable cannula attached thereto having a bore through which said stylet extends into and externally from , wherein said motor/stylet assembly includes a retracting component to automatically return said motor/stylet assembly back towards said closed end of said barrel upon detachment from said cannula , and wherein said handle comprises a power source to generate sufficient power for operation of said drill through said motor.2. The device of wherein said handle exhibits a flat ...

INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well. 1. An integrated circuit (IC) comprising at least one unit cell , wherein the at least one unit cell comprises:a first bit circuit configured to process a first bit signal;a second bit circuit configured to process a second bit signal;a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage; anda second well biased to a second voltage that is different from the first voltage, wherein each of the first and second bit circuits comprises at least one transistor from among a plurality of transistors disposed in the first well.2. The IC of claim 1 , wherein the first and second bit circuits have a same configuration.3. The IC of claim 1 , wherein a layout of the first bit circuit and a layout of the second bit circuit are symmetrical to each other about an axis that crosses the at least one unit cell.4. The IC of claim 1 , wherein a layout of the first bit circuit corresponds to a layout of the second bit circuit rotated about a point in the at least one unit cell.5. The IC of claim 1 , wherein each of the first and second bit circuits comprises a level shifter.6. The IC of claim 1 , wherein the at least one unit cell further comprises:a third well biased to the second voltage, wherein the second and third wells each contact one side from a pair of sides of the at least one unit cell that face each other, and the pair of sides corresponds to the boundaries of the at least one unit ...

METHOD OF OPERATING AND ELECTRONIC DEVICE THEREOF

A method of operating a haptic-enabled electronic device includes detecting an input interaction between the haptic-enabled electronic device and a touchscreen-enabled electronic device selecting a vibration command in associated with the input, and vibrating the haptic-enabled electronic device in response to the vibration command. 1. A method of providing haptic feedback to an external electronic device comprising:detecting, via a touchscreen, an input from the external electronic device having a vibration motor; andIdentifying, via a processor, a vibration command associated with an executable function triggered by the input; andtransmitting the vibration command to the external electronic device to activate the vibration motor.2. The method of claim 1 , wherein the executable function is a gestural input performed on a touch screen including at least one of a flick claim 1 , a touch-and-drag claim 1 , a tab-and-hold claim 1 , and a multi-tab.3. The method of claim 1 , wherein the vibration command causes the vibration motor of the external electronic device to vibrate at a specific time and a specific strength.4. The method of claim 1 , wherein the vibration command is transmitted to the external electronic device using a near field communication scheme.5. The method of claim 2 , wherein the vibration command is transmitted only when a pre-specified program is being executed by the processor.6. A method of providing haptic feedback to an electronic device claim 2 , comprising:generating an input to a touchscreen of a touchscreen-equipped device via an interaction between the electronic device and the touchscreen;receiving from the touchscreen-equipped device a vibration command associated with the input; andin response to the vibration command, actuating vibration motors housed within the electronic device via a processor.7. The method of claim 6 , wherein the input is generated by a gesture operation on the touchscreen claim 6 , the gesture operation comprising ...

LIGHT-EMITTING DIODE (LED) DEVICE

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to electrically insulate the light-emitting structures from each other;a plurality of phosphor layers on second surfaces separate, respective light-emitting structures of the plurality of light-emitting structure, each phosphor layer configured to filter a different color of light from light emitted by the light-emitting structures; anda partition layer between the phosphor layers, such that the partition layer separates the phosphor layers from each other, the partition layer including at least one of a substrate structure, an insulation structure, and a light reflecting structure.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the ...

NONVOLATILE MEMORY TRANSISTOR AND DEVICE INCLUDING THE SAME

Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic. 1. A neuromorphic device , comprising: a channel element;', 'a gate electrode corresponding to the channel element;', 'a gate insulation layer between the channel element and the gate electrode;', 'an ionic species moving layer between the gate insulation layer and the gate electrode; and', 'a source and a drain separated from each other with respect to the channel element, wherein a motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode, wherein a threshold voltage changes according to the motion of the ionic species, and wherein the nonvolatile memory transistor has a multi-level characteristic., 'a nonvolatile memory transistor, the nonvolatile memory transistor comprising, 'a synapse device, the synapse device comprising2. The neuromorphic device of claim 1 , further comprising a complementary metal-oxide-semiconductor (CMOS) neuron circuit connected to the synapse device.3. The neuromorphic device of claim 1 , wherein the ionic species moving layer comprises a bipolar memory layer.4. The neuromorphic device of claim 1 , wherein the ionic species moving layer comprises negative ionic species and the threshold voltage increases as a concentration of the negative ionic ...

LOW-DEFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition. 1. A method of manufacturing a semiconductor device , comprising:forming a buffer layer on a silicon substrate;forming an interface control layer on the buffer layer under a first growth condition; andforming a nitride stack on the interface control layer under a second growth condition different from the first growth condition,wherein the first growth condition and the second growth condition are controlled such that a ratio of a minimum value of a center value of reflectivity oscillation of the interface control layer to a maximum value of a center value of reflectivity oscillation of the nitride stack has a range of about 0.8 or more.2. The method of claim 1 , wherein the ratio of the minimum value of the center value of reflectivity oscillation of the interface control layer to the maximum value of the center value of reflectivity oscillation of the nitride stack has a range of about 0.9 or more.3. The method of claim 1 , wherein the interface control layer is formed under at least one different condition of temperature claim 1 , pressure and thickness from the nitride stack.4. The method of claim 1 , wherein the interface control layer is formed at a first temperature of about 900° C. to about 1050° C. claim 1 , and the nitride stack is formed at a second temperature higher than the first temperature.5. The method of claim 4 , wherein the interface control layer is formed at a first pressure of about 20 torr to about 500 torr claim 4 , and the nitride stack is formed at a second pressure equal to or higher than the first pressure.6. The method of claim 1 , wherein the interface control layer ...

Substrate cutting device

A substrate cutting device includes: a base portion; a stage on the base portion; a partition member spaced from the stage; and an exhausting structure below the cell substrate and configured to exhaust a gaseous substance. The stage has a top surface configured to support a cell substrate and a connection surface perpendicular to the top surface, and the partition member faces the connection surface and is configured to support the cell substrate.

ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM BY USING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR BY USING THE SAME

Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate. 1. A fluorine-containing sputtering zinc target comprising:a body including a mixture of zinc fluoride powder and zinc powder.2. The fluorine-containing sputtering zinc target of claim 1 , wherein the fluorine-containing zinc target includes fluorine in a range from about 0.1 atom % to about 10 atom %.3. The fluorine-containing sputtering zinc target of claim 1 , further comprising:zinc nitride powder in the body.4. The fluorine-containing sputtering zinc target of claim 3 , further comprising:zinc oxide powder in the body.5. A method of fabricating a zinc nitride thin film by using a single target sputtering claim 3 , the method comprising:preparing a fluorine-containing zinc target;mounting the fluorine-containing zinc target and a substrate in a sputtering chamber;supplying nitrogen gas and inert gas into the sputtering chamber; andforming a fluorine-containing zinc nitride thin film on the substrate.6. The method of claim 5 , wherein the preparing of the fluorine-containing zinc target includes sintering a body including a mixture of zinc powder and zinc fluoride powder.7. The method of claim 6 , wherein the fluorine-containing zinc target includes fluorine in a range from about 0.1 atom % to about 10 atom %.8. The method of claim 6 , wherein the mixture further includes at least one of zinc nitride powder and zinc oxide powder.9. The method of claim 6 , wherein the fluorine-containing zinc nitride film includes zinc in a range from about 40 atom % to about 60 atom % claim 6 , oxygen in a range from about 0 ...

INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well. 1. An integrated circuit (IC) comprising at least one unit cell , wherein the at least one unit cell comprises:a first bit circuit configured to process a first bit signal;a second bit circuit configured to process a second bit signal; anda common circuit configured to receive a control signal and control the first and second bit circuits according to the control signal.2. The IC of claim 1 , wherein the first bit circuit comprises a first logic gate configured to receive the first bit signal and a signal output from the common circuit claim 1 , the second bit circuit comprises a second logic gate configured to receive the second bit signal and the signal output from the common circuit claim 1 , and the first and second logic gates are of a same type.3. The IC of claim 1 , wherein the first bit circuit comprises a first latch configured to receive the first bit signal and latch the first bit signal according to a signal output from the common circuit claim 1 , and the second bit circuit comprises a second latch configured to receive the second bit signal and latch the second bit signal according to the signal output from the common circuit.4. The IC of claim 1 , wherein the first bit circuit comprises a first flip-flop configured to receive the first bit signal and a clock signal claim 1 , and retain a first output signal output from the first flip-flop according to a signal output from the common circuit and the clock ...

COMB

A comb with a dent formed in an outer edge surface of an edge part. A tip of the edge part is pressed against a scalp where the parting line in hair is to be formed, and a hair bundle divided outside the edge part is pinched between the edge part and a finger. Since a part of the pinched hair bundle spreads naturally inside the dent, a stuck feeling is eliminated, and the edge part moves smoothly along the parting line without the pinched hair resisting formation of the parting line. Further, in the comb, a plurality of through-holes are formed in a main body at predetermined intervals. When measuring hair, the outer surface is pressed against the scalp, and measurements of the length of hair lengths are made based on the through-holes, while a two-point contact state in which edge portions on both sides of the dent contact the scalp. 1. A comb comprising a comb main body , one end edge comb part formed on one end side in a longitudinal direction of the comb main body , and a plurality of comb teeth formed on the comb main body ,wherein the one end edge comb part has a sharpened tip end to be used for formation of a parting line in head hair; anda dented portion is formed in an outer edge surface between a tip end side and a base end side of the one end edge comb part so as to make a space in which a hair bundle of the parting line is spread, the hair bundle being pinched by a finger applied to the outer edge surface.2. The comb as recited in claim 1 , wherein the comb main body has indexes indicative of distances parallel to the longitudinal direction as the outer edge surface of the one end edge comb part is pressed against a scalp to contact outer edge portions that remain on both sides of the dented portion with the scalp claim 1 ,wherein a measurement of a length of head hair is carried out based on the indexes by applying the outer edge surface of the one end against the scalp.3. The comb as recited in claim 2 , wherein a grip part is formed on the other end ...

FOLDABLE, STOWABLE INTRAOSSEOUS DEVICE THAT STANDS ALONE ON FLAT SURFACE WHEN UNFOLDED

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising a barrel, a handle, and a connection between said barrel and said handle to permit rotation of said barrel and said handle in relation to one another, wherein said barrel and said handle are rotatable from a fully folded state to a fully extended state, wherein said fully folded state is indicated as said handle provides at least some cover to said open end of said barrel and said fully extended state is indicated as said handle is rotated as far from said fully folded state as permitted and said open end of said barrel is uncovered as well; wherein said handle comprises a top portion, a completely flat bottom portion, and four side portions with one front side, one rear side, and two opposing lateral sides, wherein said flat bottom portion of said handle provides sufficient stability upon unfolding thereof to allow for said drill device to stand alone on a flat surface, wherein said stand alone capability is provided at differing degrees of rotation of said ...

FULLY DISPOSABLE SINGLE-USE PASSIVE SAFETY INTRAOSSEOUS DEVICE

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising separable components , wherein said components include a barrel housing a drill motor and stylet for drilling operation into a target bone and a handle including a power source for said drill motor , wherein said separable barrel retains said stylet subsequent to bone drill utilization and is disposable within a medical sharps container , wherein said separable handle is disposable within a biohazard container , and wherein said power source is removable from said handle and disposable separately.2. The device of wherein said power source is at least one battery.3. The device of wherein said barrel and said handle are connected through a hub structure that permits rotation of said barrel and said handle in relation to one another. This application is a continuation-in-part of pending U.S. patent application Ser. No. 16/125,767, filed on Sep. 10, 2018, which claims the benefit of expired U.S. Provisional Patent Application Nos. 62/556,397, filed on Sep. 9, 2017, ...

COMBINATION INTRAOSSEOUS DRILL AND FLASHLIGHT

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device including a stylet and cannula combination for introduction within a target bone , a motor to provide drilling operation of said stylet and cannula combination , at least one light positioned on the surface of said device and exhibiting at least 10 candelas light power , and a power source for said motor and said at least one light.2. The device wherein more than one light is present on said device surface.3. The device of wherein said at least one light is disposed in the same general direction as said stylet and cannula combination as they are drilling within said target bone.4. The device of wherein said at least one light remains activated subsequent to a drilling operation.5. A method of introducing substances into and/or removing substances from a target intramedullary space of a bone utilizing the device of claim 1 , said method comprising the steps of:a) providing said device with said at least one light activated;b) determining the properly located bone portion ...

COMB

A comb includes three rows of outer and inner comb teeth, and a pitch dimension of the inner comb teeth is narrower than pitch dimensions of the outer comb teeth. Each inner comb tooth is formed with a stepped part at an intermediate position in a protruding direction thereof, and a height of a tip end of each comb tooth are different from each other and a depth of a tooth bottom are also different from each other. By providing the three rows and the stepped part, hair is easily caught with each comb tooth entirely. As a result, resistance can be increased, suitable tension can be obtained, and backcombed hair can easily be formed. Moreover, the height and depth of each tooth of the inner comb teeth are differentiated to distribute the resistance, fewer sweater-pill-like portions are generated, and backcombed hair can be formed uniformly. 1. A comb , where a plurality of comb teeth protruding from a comb main body having a longitudinal direction thereof are arrayed ,wherein the comb tooth has a stepped part that is formed at an intermediate position of the comb tooth in a protruding direction thereof,wherein a first section of the comb tooth that extends from a tip end side to the stepped part has a smaller dimension in a direction perpendicular to the protruding direction of the comb tooth, compared with a second section that extends from the stepped part to a root side, andwherein the stepped part is formed slantly with respect to the protruding direction so that the stepped part spreads toward the root side of the comb tooth.2. The comb in accordance with claim 1 ,wherein three or more tooth bottoms between adjacent comb teeth among the plurality of comb teeth are different from each other in a tooth bottom depth.3. The comb in accordance with claim 1 ,wherein a plurality of comb teeth where the stepped part is not formed are arrayed parallel to the row of the plurality of comb teeth where the stepped part is formed, andwherein an interval of the comb teeth where ...

VOICE SIGNAL PROCESSING METHOD ACCORDING TO STATE OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE THEREFOR

The present invention relates to a voice signal processing method according to a state of an electronic device, and an electronic device therefor. An electronic device according to various embodiments comprises: a microphone; and a processor, wherein the processor can be configured to: obtain a voice signal using the microphone, check a state of the electronic device, and generate a first voice signal by filtering the voice signal using a first method, at least based on a determination of the electronic device being in a first state; generate a second voice signal by filtering the voice signal using a second method, at least based on a determination of the electronic device being in a second state; and transmit to an external electronic device a corresponding voice signal of the first voice signal or the second voice signal. In addition, other embodiments are possible. 1. An electronic device , comprising:a microphone; anda processor, wherein the processor is configured to perform:obtaining a voice signal via the microphone;identifying a state of the electronic device;filtering the voice signal according to a first method based at least on a determination indicating that the electronic device is in a first state, and generate a first voice signal;filtering the voice signal according to a second method based at least on a determination indicating that the electronic device is in a second state, and generate a second voice signal; andtransmitting a corresponding voice signal from among the first voice signal and the second voice signal to an external electronic device.2. The electronic device of claim 1 , wherein the state includes battery capacity information associated with the electronic device claim 1 , and the processor is configured to perform:generating the first voice signal when the battery capacity information falls within a first range; andgenerating the second voice signal when the battery capacity information falls within a second range.3. The electronic ...

INTRAOSSEOUS DEVICE HAVING RETRACTABLE MOTOR/STYLET ASSEMBLY AND AUTOMATIC STYLET POINT COVER UPON RETRACTION OPERATION

A portable and passive safety intraosseous device to allow for direct introduction of medications, etc., within the intermedullary space of a subject patient's bone or, if needed, the removal of certain substances from such a subject patient's bone. Such a device permits direct drilling and placement of a cannula within the subject bone with access external to the subject patient's skin, permitting, as well, connection of a tube for such introduction/removal purposes. The ability to provide a passive safety unit allows for facilitated utilization in, for instance, emergency situations with the entire device provided for utilization thereof. The device includes a drilling component with a permanently attached stylet and a removable cannula, a power supply for a single drilling operation, a mechanism to draw the stylet back into the drill component after use and disengagement from the cannula, and an automatic closure that activates with the separation of the cannula. 1. An intraosseous drill device comprising a handle and a barrel having a closed end and an open end , said barrel further comprising an internally disposed integrated drill motor and stylet assembly , an external manual implement to initially move said integrated drill motor and stylet assembly towards said barrel opening , an internal implement to retract said integrated drill motor and stylet assembly towards the closed end of said barrel subsequent to movement thereof towards said barrel opening , and a cover for said stylet , wherein said cover for said stylet automatically covers said stylet upon retraction subsequent to manual movement of said integrated drill motor and stylet towards said barrel opening , wherein said retraction is operated through automatic action of said internal retraction implement.2. The intraosseous drill device further comprising a cannula implement temporarily connected with said stylet or said integrated drill motor and stylet assembly , wherein said cannula is ...

COMB

The purpose is to reduce a load on fingers which grip a comb and to increase a gripping power to the fingers which grip the comb. In a comb, first and second recessed parts of a curved shape are formed in both perimeter edges of edge comb parts in width directions, respectively, and also first and second comb tooth recessed parts of a curved shape are formed in both perimeter edges of a plurality of comb teeth in width directions. When one of the edge comb parts is mainly gripped by the fingers, the fingers are fitted into the first or second recessed part of the edge comb parts and also into the first or second comb tooth recessed parts of the comb teeth located nearby. Since each of the recessed parts has the curved shape, it achieves surface contact with the fingers. 111-. (canceled)12. A comb comprising a comb main body having a plurality of comb teeth , and an edge comb part projecting from one end of the comb main body characterized in that:the edge comb part is divided into a range on a tip-end side having a tapered tip end, a range on the root side connected with the comb main body and a range of a middle part which is between the tip-end side and the root side,an outer edge surface forming an edge of a perimeter of the edge comb part in a front view is concave at the middle part and convex at the tip-end side by forming a depressed part at the middle part in the outer edge surface,a tip end through-hole penetrating in the width directions of the edge comb part is formed within the range on the tip-end side, anda counter bore is formed around the tip end through-hole.13. The comb of claim 12 , wherein the tip end through-hole and the counter bore are elliptical shape claim 12 , andthe tip end through-hole and the counter bore are arranged so that long-axis direction of the elliptical shape is oblique with respect to a projecting direction of the edge comb part.14. The comb of claim 12 , wherein the range of the middle part is wider than the range on the tip- ...

Peer-to-peer grouping interfaces and methods

Application programming interfaces and methods that provide group management in a peer-to-peer (P2P) network are provided. More specifically, new and improved P2P application programming interfaces (APIs) and methods for the creation and access of groups, the retrieval of member and group information, the addition, modification, deletion and management of records (data), the importation and exportation of group data, the direct communication between members, the addition of a security provider to a group, the setting and retrieval of presence information, the registering for event notifications, and other utility and support functions are presented. Each of these interfaces utilize various parameters that are passed in from an application program that uses these interfaces to manage and utilize groups. The interfaces return a value that indicates the success or failure of the function. For failures, the interfaces provide an indication as to the problem resulting in the failure.

Error control method for multiparty multimedia communications

The present invention relates to the error control method in inter-multi-user multimedia communication. There are error detection, error reporting and error recovery functions in the conventional error control method which finds out and solve the error occurring at the time of data transmission between transmitter and receiver, however, these functions are an error control method occurring in end-to-end communication consisting of one transmitter and one receiver and are not appropriate to solving errors occurring concurrently and in a bundle between one or some transmitters and many receivers in many-to-many multiple points inter-multi-user communication such as multimedia communication. Therefore, the present invention uses the damping technique to minimize the number of error control packets of which all the receiver having sensed the error concurrently request the resend based on the NACK.

Verfahren und vorrichtung zum gasinduzierten mengen und mischen von fluiden

Patent DE2454816C2

Aramid papers containing aramid paper pulp

An aramid paper which has high porosity while exhibiting the usual tensile properties is disclosed. The paper has good saturability and a smooth surface while retaining high break strength.

Multimodal polyolefin resin, and molded body manufactured therefrom

Disclosed are a multimodal polyolefin resin having high melt strength and excellent formability, mechanical strength, processability and appearance, and a molded body manufactured therefrom. As one embodiment, the multimodal polyolefin resin meets the following requirements (1) to (7): (1) density (d) is 0.930-0.960 g/cm 3 ; (2) melt flow index (MIP, the condition of 190°C and 5.0 kg load) is 0.01-10.0 g/10 minutes; (3) the ratio (Mw/Mn, molecular weight distribution (MWD)) of the weight average molecular weight (Mw) to the number average molecular weight (Mn) measured by gel permeation chromatography (GPC) is 10-60; (4) two or more peaks appear when a molecular weight is measured by GPC; (5) in a molded pipe, the weight average molecular weight (Mw) of a polymer collected at position B of definition 1 of the description is 0.1% greater than the weight average molecular weight (Mw) of a polymer collected at position A; (6) in a molded pipe, the amount of a polymer having a weight average molecular weight (Mw) of 10,000 or less among polymers collected at position A of definition 1 is 0.1% greater than the amount of a polymer having a weight average molecular weight (Mw) of 10,000 or less among polymers collected at position B; and (7) in a molded pipe, the amount of a polymer having a weight average molecular weight (Mw) of 1,000,000 or more among polymers collected at position B of definition 1 is 0.1% greater than the amount of a polymer having a weight average molecular weight (Mw) of 1,000,000 or more among polymers collected at position A.

Treatment for vesicovaginal fistula

The present invention relates to methods and compositions for the treatment of vesicovaginal fistula. It is based, at least in part, on the discovery that a menstrual cup may be used to collect urine and decrease or prevent urine leakage in certain women having vesicovaginal fistula and, in some cases, the menstrual cup was observed to at least partially occlude the fistula and permit normal micturition.

Processes of regenerating Ni catalysts and of preparing Ni catalysts

The present invention relates to processes of regenerating Ni catalysts which had been used in a hydrogenation of unsaturated fatty oil or petroleum resin, which comprise separating the Ni-extracted solution and support by extracting the pretreated Ni catalysts with an acid, preparing support-containing solution by burning the separated support in the flow of air or oxygen diluted with nitrogen at the temperature of 300° to 800° C. for 5 to 15 hours and adding deionized water to the support, preparing a catalyst precursor by dropping the Ni-extracted solution and the mixed solution of a basic compound and a compound with free oxygen in the support-containing solution during agitation so as to keep PH of the solution at 9 to 13, whereby nickel oxide precipitates on the support, carrying out a step consisting of aging, washing, filtering and drying the catalyst precursor, and stabilizing the dried catalyst precursor by reducing with hydrogen and passing in nitrogen diluted with oxygen or an organic material.

System and method for forming a membrane electrode assembly for fuel cells

A system for manufacturing a membrane electrode assembly for a fuel cell according to an embodiment of the present invention includes a catalyst solution preheating device, a carrying gas preheater, a cathode catalyst solution spray nozzle, and an anode catalyst solution spray nozzle. The catalyst solution preheating device preheats a cathode catalyst solution and an anode catalyst solution. The carrying gas preheater preheats a carrying gas. The cathode catalyst solution spray nozzle is supplied with the cathode catalyst solution preheated by the catalyst solution preheating device and the carrying gas preheated by the carrying gas preheater, and is configured to spray the supplied cathode catalyst solution. The anode catalyst solution spray nozzle is supplied with the anode catalyst solution preheated by the catalyst solution preheating device and the carrying gas preheated by the carrying gas preheater, and is configured to spray the supplied anode catalyst solution.

PROCESS FOR SEPARATING A POLYMERIZATE OF A 1-OLEFIN WITH 4-10 CARBON ATOMS FROM A SOLUTION

イソチアゾロン無水物の製造方法

(57)【要約】 【課題】 廃棄物をほとんど発生させないとともに工程 条件が良好で安定性が卓越し、作業性の向上によって生 産性及び経済性を向上させることができるイソチアゾロ ン無水溶液を提供する。 【解決手段】 イソチアゾロンを含有する水溶液をハロ ゲン化炭化水素またはニトロ化炭化水素を使用して抽出 した後、有機層を分離してからハロゲン化炭化水素また はニトロ化炭化水素を除去してイソチアゾロン無水物を 製造し、この無水物にグリコール、アルコール、グリコ ールエーテル類等の有機溶媒を混合して、安定性が向上 したイソチアゾロン無水溶液を製造する。

Method of preparing polycarbonate resin

液晶表示装置用薄膜トランジスタ基板及びその製造方法

(57)【要約】 【課題】 液晶表示装置の製造工程中に残留する導電膜 によって画素電極及びデータ配線が互いに短絡されるこ とを防止して画素欠陥を減少させ、製造工程中に発生す る整列誤差を最少化する。 【解決手段】 透明な絶縁基板と、基板に縦方向に形成 されているデータ線と、データ線を覆っている保護膜 と、データ線と電気的に連結されており、保護膜の上に 形成されている画素電極とを含み、画素電極とデータ線 との間の保護膜が除去された開口部が形成されていてデ ータ線と画素電極とが導電残留物質によって導通されな いようにする。

Method of producing fluorization catalyst for preparing 1,1,1,2-tetrafluoroethane

A mixture of chrom oxide hydride and magnesium or calcium chloride in the ratio of 1 : 0.3 and 1 : 10 is mixed in a metal salt solution, and reacted with hydrogen fluoride solution, followed by, curing the obtained paste mixture. The ratio of chrom and magnesium or calcium is between 1 : 1 and 1 : 4, and the metal salt is selected from cerium chloride, zinc chloride, nickel chloride and aluminium chloride.

新穎腰果酚系有機硬化劑，其製備方法，及由其所製造之輪胎用橡膠複合組成物

本發明公開腰果酚系有機硬化劑之製備方法(包括使腰果仁萃取物與粉狀硫反應的步驟)、由本方法所得到的腰果酚系有機硬化劑及由其所製造之橡膠複合物和輪胎組成物。和使用傳統的的硬化劑之橡膠組成物相比，使用腰果酚系有機硬化劑之橡膠組成物表現出顯著改善的預期行駛里程(FPS)、拉伸強度(T/S)、未硬化性和抗濕滑性，並有助於改進作為最終產品-實際汽車輪胎之耐磨損性。因此，腰果酚系有機硬化劑可以有利地在橡膠硬化製程中使用於輪胎胎面的橡膠複合組成物中。

End-modified diene copolymer and rubber composition for tire tread including the same

Process for preparing polyethylene having improved film forming properties

A THREE-STAGE PROCESS FOR PREPARING POLYETHYLENE EMPLOYING AT LEAST ONE PEROXIDE CATALYST IN EACH STAGE. THE PROCESS PRODUCES A NOVEL POLYETHYLENE HAVING A DENSITY OF ABOUT 0.922 TO ABOUT 0.932 WHICH FINDS PARTICULAR UTILITY IN FORMING POLYETHYLENE FILMS HAVING IMPROVED OPTICAL PROPERTIES.

Process for producing substantially ash-free polyolefin polymers

TO PRODUCE A HIGHLY CRYSTALLINE POLYMER SUBSTANTIALLY FREE OF IMPURITIES. PROCESSES FOR POLYMERIZING ALPHA OLEFINIC HYDROCARBONS COMPRISING POLYMERIZING AN ALPHA OLEFIN WITH A SOLID STEREOSPECIFIC CATALYST IN THE PRESENCE OF A DILUENT WHICH IS A SOLVENT FOR THE POLY-ALPHA-OLEFIN AT THE REACTION TEMPERATURE TO PRODUCE A POLYMER SOLUTION CONTAINING CATALYST RESIDUES. THE POLYMER SOLUTION IS FILTERED TO REMOVE CATALYST REDISDUES. THE FILTERED SOLUTION IS CONTACTED WITH ALUMINA AND CONCENTRATED TO FORM A SOLID POLYMER CONCENTRATE CONTAINING RESIDUAL SOLVENT. PELLETS ARE FORMED OF THE POLYMER CONCENTRATE AND THE PELLETS EXTRACTED WITH A SOLVENT FOR AMORPHOUS LOW MOLECULAR WEIGHT POLYMER

Super water-repellent organic/inorganic composite membrane

The present invention relates to a super water-repellent organic/inorganic composite material, more particularly to a new-concept super water-repellent organic/inorganic composite material with superior separation property having skin layer chemically immobilized with functional polymer on the porous inorganic support surface with fractal surface structure and pores of nanometers to micrometers, using grafting-from surface polymerization method.

Super water-repellent organic/inorganic composite membrane

The present invention relates to a super water-repellent organic/inorganic composite material, more particularly to a new-concept super water-repellent organic/inorganic composite material with superior separation property having skin layer chemically immobilized with functional polymer on the porous inorganic support surface with fractal surface structure and pores of nanometers to micrometers, using grafting-from surface polymerization method.

Metal filter for purifying exhaust gas from ship, and preparation method thereof

Ansa-metallocene compound, process of preparing the same, and process of preparing polyolefin using the same

Provided are a bridged metallocene compound particularly suitable for copolymerization of ethylene and alpha-olefin or cyclic olefin, a process of preparing the metallocene compound, and a process of preparing polyolefin using the metallocene compound. The bridged metallocene compound has low steric hindrance and good (co)polymerization activity, and thus, exhibits good activity in copolymerization of ethylene and alpha-olefin such as 1-hexene or 1-octene. Furthermore, the process of preparing the bridged metallocene compound is simplified, and thus, suitable for mass production.

Ansa-metallocene compound and process of preparing polyolefin using the same

Multi-component composite film method for preparing the same

The present invention provides a multi-component composite film comprising a) polymer support layer; and b) porous gellable polymer layer which is formed on one side or both sides of the support layer of a), wherein the support film of a) and the gellable polymer layer of b) are unified without the interface, a method for preparing the same, and a polymer electrolyte system applied the same.

Plasticity induced bonding

Methods and apparatuses for bonding polymeric parts are disclosed. Specifically, in one embodiment, the polymeric parts are bonded by plastically deforming them against each other while they are below the glass transition temperatures. A method includes: placing a first polymeric part in contact with a second polymeric part; and plastically deforming the first polymeric part and the second polymeric part against each other to bond the first polymeric part to the second polymeric part. Additionally, during the plastic deformation, a temperature of the first polymeric part is less than a glass transition temperature of the first polymeric part and a temperature of the second polymeric part is less than a glass transition temperature of the second polymeric part.

System and a method for inkjet image supporting medium

An image supporting medium includes a raw base paper, and a film forming resin disposed on at least one side of the raw base paper, wherein the raw base paper is formed of fibers from between 0.5 and 3.0 mm in weighted average length. Additionally, the image supporting medium includes from between 1 and 40% filler by weight.

Polypropylene resin composition for automotive door panels with impact and scratch resistance

Polypropylenharz-Zusammensetzung für Automobil-Türverkleidungen mit hervorragender Schlagfestigkeit, Steifigkeit und Kratzfestigkeit, und insbesondere eine teil-vernetzte Polypropylenharz-Zusammensetzung, hergestellt durch Zugabe von hochkristallinem Polypropylen, teil-vernetztem Polypropylen, Polyethylen, wahlweise einem Ethylen-Copolymer-Kautschuk und einem anorganischen Füllstoff. Polypropylene resin composition for automobile door panels with excellent impact resistance, rigidity and scratch resistance, and in particular a partially cross-linked polypropylene resin composition, produced by adding highly crystalline polypropylene, partially cross-linked polypropylene, polyethylene, optionally an ethylene-copolymer rubber and an inorganic filler ,

Outstandingly heat resistant polylactide resin and a production method for the same

The present invention relates to a polylactide resin having excellent heat resistance, a preparation method thereof, and a polylactide resin composition including the same. The polylactide resin is characterized by high polymerization activity owing to an organic coordinated metal catalyst even though it has a low catalyst content, and a molecular weight reduction due to thermal decomposition at high temperature and a rate of thermal decomposition including depolymerization are greatly suppressed by a low catalyst content and a low resin acidity, and thus provided is the polylactide resin having superior heat resistance.

傾斜試料ステージを備える走査型プローブ顕微鏡

【課題】オーバーハング構造を有する試料を測定する走査型プローブ顕微鏡を提供する。 【解決手段】本走査型プローブ顕微鏡は、試料３４０が上に載置される傾斜ステージ４００を有する。試料は、順方向走査の間は時計回りに、逆方向走査の間は反時計回りにステージを傾斜させながら前後に走査される。試料の第１の表面輪郭が、順方向走査の間のプローブ３０１の応答及びステージの傾斜角度から決定される。試料の第２の表面輪郭が、逆方向走査の間のプローブの応答及びステージの傾斜角度から決定される。試料の最終的な表面輪郭が、第１の表面輪郭と第２の表面輪郭とを組み合わせることによって得られる。 【選択図】図３

Multimodal polyolefin resin, and molded body manufactured therefrom

Liquid-crystalline medium

The present invention relates to a liquid-crystalline medium, characterised in that it contains - a polymerisable component (A) containing one more polymerisable compounds and - a liquid-crystalline component (B) containing one more compounds of the general formula I and additionally comprises one or more compounds of the formula XXIII in which R 0 , rings A 1 and A 2 , Z 1 , Z 2 , Y 1 , Y 2 , X 0 , r, R 0 ' and R 0 " are as defined in Claim 1.

Liquid-crystalline medium

The present invention relates to a liquid-crystalline medium, characterised in that it contains - a polymerisable component (A) containing one more polymerisable compounds and - a liquid-crystalline component (B) containing one more compounds of the general formula I and additionally comprises one or more compounds selected from the group consisting of the general formulae IX to XV, in which R 0 , rings A 1 and A 2 , Z 1 , Z 2 , Y 1-4 , X 0 and r are as defined in Claim 1.

Multiple touch detection

An apparatus for and method of detecting multiple presences on a touch sensor device are described.

Portable terminal