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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 45. Отображено 37.
27-02-2018 дата публикации

Light-emitting diode (LED) device

Номер: US0009905543B2
Автор: Ji-hye Yeon, Wan-tae Lim, Young-soo Park, Jung-sub Kim, Jin-sub Lee, Ha-nul Yoo, Hye-seok Noh, YEON JI HYE, LIM WAN TAE, PARK YOUNG SOO, KIM JUNG SUB, LEE JIN SUB, YOO HA NUL, NOH HYE SEOK, Yeon Ji-hye, Lim Wan-tae, Park Young-soo, Kim Jung-sub, Lee Jin-sub, Yoo Ha-nul, Noh Hye-seok
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.

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Номер записи: 1
14-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160013365A1
Автор: Choi Young Jin, CHUN Dae Myung, HEO Jae Hyeok, KUM Hyun Seong, Seong Han Kyu, YEON Ji Hye
Принадлежит:

A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape. 1. A method for manufacturing a semiconductor light emitting device , the method comprising steps of:forming a base layer with a first conductivity-type semiconductor on a substrate;forming a mask layer and a mold layer having a plurality of openings exposing portions of the base layer on the base layer;forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape; andsequentially forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores,wherein the step of forming the plurality of first conductivity-type semiconductor cores comprises steps of:forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion;removing the mold layer; andforming an additional growth region on the first region such that the body portion has a hexagonal prism shape.2. ...

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Номер записи: 2
15-02-2018 дата публикации

LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME

Номер: US20180047780A1
Автор: Kim Yong Il, LIM Wan Tae, Sim Sung Hyun, YEON Ji Hye, YOO Hanul
Принадлежит:

A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer. 1. A light emitting device package , comprising:a substrate for growth having a plurality of light-emitting windows;a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other;a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light- ...

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Номер записи: 3
15-02-2018 дата публикации

Method of fabricating light emitting device package

Номер: US20180047880A1
Автор: Hanul YOO, Hye Seok NOH, Ji Hye YEON, Sung Hyun SIM, Wan Tae Lim, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

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Номер записи: 4
28-02-2019 дата публикации

LIGHT-EMITTING DIODE (LED) DEVICE

Номер: US20190067257A1
Автор: KIM Jung-Sub, LEE Jin-Sub, Lim Wan-tae, Noh Hye-seok, PARK Young-Soo, Yeon Ji-hye, Yoo Ha-nul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the plurality of light-emitting structures from each other;a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structure; anda partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.2. The LED device of claim 1 , wherein the quantum dots include a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell.3. The LED device of claim 2 , whereinthe core includes CdSe or InP, and the shell includes ZnS or ZnSe.4. ...

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Номер записи: 5
27-02-2020 дата публикации

LIGHT-EMITTING DIODE (LED) DEVICE

Номер: US20200066689A1
Автор: KIM Jung-Sub, LEE Jin-Sub, Lim Wan-tae, Noh Hye-seok, PARK Young-Soo, Yeon Ji-hye, Yoo Ha-nul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the plurality of light-emitting structures from each other;a plurality of wavelength transformers on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures; anda partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.3. The LED device of claim 1 , further comprising:an uneven structure on a surface of a light-emitting structure, of ...

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Номер записи: 6
07-04-2016 дата публикации

METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE

Номер: US20160099376A1
Автор: Choi Young Jin, CHUN Dae Myung, HEO Jae Hyeok, KIM Jung Sub, KUM Hyun Seong, LEE Jin Sub, Seong Han Kyu, YEON Ji Hye
Принадлежит:

According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity. 1. A method of manufacturing a nanostructure semiconductor light-emitting device , comprising:providing a base layer formed of a first-conductivity type nitride semiconductor material;forming nanocores of a first-conductivity type nitride semiconductor material on the base layer spaced apart from each other; andforming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layer on surfaces of each of the nanocores,{'sub': a', 'b', 'a', 'b, 'wherein at least a portion of the multilayer shell is formed by controlling at least one process parameter of a flux of a source gas, a flow rate of the source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a film thickness uniformity of 80% or more, wherein when a minimum thickness and a maximum thickness of a film grown on side surfaces of each of the nanocores are respectively represented as t(nm) and t(nm), the film thickness uniformity (%) is defined as (t/t)×100.'}2. The method of claim 1 , wherein when a height of each of the nanocores and a pitch between the nanocores are represented by H (μm) and P (μm) claim 1 , respectively claim 1 , H/P≧2.35 is satisfied and the film thickness uniformity is 90% or more.3. The method of claim 1 , wherein when a height of each of the nanocores and a pitch ...

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Номер записи: 7
02-04-2020 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20200105980A1
Автор: JO Su Hyun, Kim Yong Il, Sim Sung Hyun, YEON Ji Hye, YOO Ha Nul, YOUN Jun Bu, Yun Ji Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer. 1. A semiconductor light emitting device , comprising:a plurality of light emitting structures;an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another;a partition layer formed on the isolation layer;a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer;a reflective layer covering the first protective layer and disposed on the side walls of the partition layer; anda second protective layer covering the reflective layer.2. The semiconductor light emitting device of claim 1 , wherein the first protective layer covers a top surface of the partition layer.3. The semiconductor light emitting device of claim 2 , wherein the reflective layer covers the first protective layer on the top surface of the partition layer.4. The semiconductor light emitting device of claim 3 , wherein the second protective layer covers the reflective layer on the top surface of the partition layer.5. The semiconductor light emitting device of claim 1 , further comprising a plurality of wavelength converting layers isolated from one another by the partition layer claim 1 , respectively disposed on the top surfaces of the plurality of light emitting structures claim 1 , and emitting lights having different colors.6. The ...

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Номер записи: 8
03-05-2018 дата публикации

SINGLE BUTTON ACTIVATION OF ALL VEHICLE SECURITY FUNCTIONS

Номер: US20180118160A1
Автор: BRUECKNER JERROD WESLEY, FOSTER KURT E., Kimura Kenta, PAXTON JODI, ROHRER MARIA, Tucker Todd, TURNER DONALD ALLEN, YEON Ji Hye
Принадлежит:

A motor vehicle includes a plurality of security devices and an electronic processor communicatively coupled to each of the security devices. The electronic processor determines that a user of the motor vehicle has depressed a predetermined pushbutton. In response to determining that the predetermined pushbutton has been depressed, the electronic processor causes each if the security devices to be turned ON. 1. A motor vehicle , comprising:a plurality of security devices; and determine that a user of the motor vehicle has depressed a predetermined pushbutton; and', 'in response to determining that the predetermined pushbutton has been depressed, cause each of the security devices to be turned ON., 'an electronic processor communicatively coupled to each of the security devices, the electronic processor being configured to2. The motor vehicle of claim 1 , wherein the predetermined pushbutton is on an electronic device that is not attached to the motor vehicle claim 1 , the motor vehicle further comprising a Bluetooth module communicatively coupled to the electronic processor and configured to:receive a wireless signal from the electronic device, the wireless signal being indicative of the pushbutton being depressed; andtransmit a notification signal to the electronic processor, the notification signal being indicative of the pushbutton being depressed.3. The motor vehicle of claim 1 , wherein the predetermined pushbutton is on an electronic device that is not attached to the motor vehicle claim 1 , the motor vehicle further comprising a WiFi module communicatively coupled to the electronic processor and configured to:receive a wireless signal from the electronic device, the wireless signal being indicative of the pushbutton being depressed; andtransmit a notification signal to the electronic processor, the notification signal being indicative of the pushbutton being depressed.4. The motor vehicle of claim 1 , wherein the plurality of security devices include a camera ...

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Номер записи: 9
05-05-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20160126419A1
Автор: Choi Young Jin, CHUN Dae Myung, HEO Jae Hyeok, KUM Hyun Seong, LEE Jin Sub, Seong Han Kyu, YEON Ji Hye
Принадлежит:

There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures. 1. A semiconductor light-emitting device , comprising:a base layer formed of a first conductivity-type semiconductor material; anda plurality of light-emitting nanostructures on the base layer spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers,wherein the first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers on the rod layers, andheights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.2. The semiconductor light-emitting device of claim 1 , wherein heights from an upper surface of the base layer to tops of the capping layers in the plurality of light-emitting nanostructures are substantially the same.3. The semiconductor light-emitting device of claim 1 , wherein claim 1 , as distances between adjacent light-emitting nanostructures increase claim 1 , the heights of the capping layers of the light-emitting nanostructures decrease.4. The semiconductor light-emitting device of ...

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Номер записи: 10
04-05-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20170125631A1
Автор: KIM Jung Sub, KWON Soon Jo, LEE Dong Gun, LEE Jin Sub, Seong Han Kyu, YEON Ji Hye
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of the first and the second quantum well layers comprises at least one graded layer having a varying amount of In composition, and the at least one graded layer of the second quantum well layer has a greater thickness than the at least one graded layer of the first quantum well layer. 1. A semiconductor light emitting device comprising:a first conductivity-type semiconductor layer; a plurality of quantum barrier layers; and', 'a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and, 'an active layer disposed on the first conductivity-type semiconductor layer, and comprisinga second conductivity-type semiconductor layer disposed on the active layer,wherein the first quantum well layer is disposed closer to the first conductivity-type ...

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Номер записи: 11
11-05-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING SAME

Номер: US20170130909A1
Автор: KIM Jung Sub, Kim Yong Il, Seong Han Kyu, YEON Ji Hye
Принадлежит:

A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source. 1. A light emitting apparatus comprising: at least one light emitting diode (LED) chip configured to emit light having a peak wavelength in a wavelength region of about 440 nm to about 460 nm, and', 'at least one phosphor configured to be excited by light emitted by the at least one LED chip, such that the at least one phosphor emits light having a peak wavelength in a wavelength region of about 490 nm to about 580 nm or a wavelength region of about 580 nm to about 630 nm; and, 'at least one first light source configured to emit white light, the at least one first light source including,'}at least one second light source configured to emit cyan light having a peak wavelength in a wavelength region of about 460 nm to about 490 nm,wherein the light emitting apparatus is configured to apply a common magnitude of electrical power to each of the at least one first light source and the at least one second light source such that a ratio of luminous flux of the white light emitted by the at least one first light source to luminous flux of the cyan light emitted by the at least one second light source ranges from about 19:1 to about 370:1.2. The light emitting apparatus of claim 1 , wherein a quantity of the at least one second light source is from about 1% to about 16% of a total quantity of the at least one first light source and the at least one second light source.3. The light emitting apparatus of claim 2 , further comprising:an array of at least one first light ...

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Номер записи: 12
14-06-2018 дата публикации

LIGHT-EMITTING DIODE (LED) DEVICE FOR REALIZING MULTI-COLORS

Номер: US20180166424A1
Автор: KIM Yong-Il, Lim Wan-tae, SIM Sung-hyun, Yeon Ji-hye, Yoo Ha-nul
Принадлежит:

A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure. 1. A light-emitting diode (LED) device , comprising:a plurality of light-emitting structures spaced apart from each other;a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively;a protection layer on second surfaces of the plurality of light-emitting structures, respectively;a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other;a plurality of phosphor layers on the second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of phosphor layers to output a different color of light; anda partitioning layer between the plurality of phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.2. The LED device as claimed in claim 1 , wherein the separation layer and the partitioning layer are included in a common layer.3. ...

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Номер записи: 13
14-06-2018 дата публикации

LIGHT-EMITTING DIODE (LED) DEVICE

Номер: US20180166425A1
Автор: KIM Jung-Sub, LEE Jin-Sub, Lim Wan-tae, Noh Hye-seok, PARK Young-Soo, Yeon Ji-hye, Yoo Ha-nul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to isolate the light-emitting structures from each other;a plurality of phosphor layers on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structure; anda partition layer between the phosphor layers, such that the partition layer separates the phosphor layers from each other.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.3. The LED device of claim 1 , further comprising:an uneven structure on a surface of a light-emitting structure, of the plurality of light-emitting ...

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Номер записи: 14
21-06-2018 дата публикации

Semiconductor light emitting device

Номер: US20180175261A1
Автор: Hanul YOO, Hye Seok NOH, Ji Hye YEON, Sung Hyun SIM, Wan Tae Lim, Yong ll Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

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Номер записи: 15
13-06-2019 дата публикации

METHOD OF FABRICATING LIGHT EMITTING DEVICE PACKAGE

Номер: US20190181181A1
Автор: LEE Dong Gun, Sim Sung Hyun, YEON Ji Hye, YOO Ha Nul
Принадлежит:

A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material. 1. A method of fabricating a light emitting device package , the method comprising: a plurality of semiconductor light-emitters, each of the plurality of semiconductor light-emitters including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on a substrate for growth, and', 'a separation region, the cell array having a first surface contacting the substrate for growth, and a second surface opposite to the first surface;, 'forming a cell array that includesexposing the first surface of the separation region by removing the substrate for growth;forming a seed layer on the first surface such that the seed layer is in the separation region;forming a photoresist pattern on the plurality of semiconductor light-emitters such that the photoresist pattern exposes the seed layer;forming a partition structure that separates the plurality of semiconductor light-emitters by plating a region exposed by the photoresist pattern;forming a ...

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Номер записи: 16
20-06-2019 дата публикации

LIGHT EMITTING DEVICE PACKAGE

Номер: US20190189853A1
Автор: Kim Yong Il, LEE Dong Gun, Sim Sung Hyun, YEON Ji Hye, YOO Hanul
Принадлежит:

A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion. 1. A light emitting device package , comprising:a light emitting cell array having a first surface and a second surface that is opposite to the first surface, the light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, wherein each of the first light emitting cell, the second light emitting cell, and the third light emitting cell has a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; anda molding portion encapsulating the light emitting cell array and the plurality of metal pillars,wherein each of the plurality of metal pillars includes a conductive layer and a bonding layer, the conductive layer being disposed between the light emitting cell array and the bonding layer, andwherein an interface between the bonding layer and the conductive layer is at a higher vertical level than a lower surface of the ...

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Номер записи: 17
20-06-2019 дата публикации

Light emitting device package and display device using the same

Номер: US20190189876A1
Автор: Dong Gun Lee, Han Kyu Seong, Ji Hye YEON, Jin Sub Lee, Yong Ii Kim, Young Jin Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

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Номер записи: 18
23-07-2015 дата публикации

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Номер: US20150207038A1
Автор: HWANG Kyung-wook, Lee Dong-Hoon, Seo Ju-Bin, Yeon Ji-hye, YOO Geon-wook
Принадлежит:

A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures. 1. A semiconductor light-emitting device comprising:a first conductive type semiconductor layer having a main surface;a plurality of vertical type light-emitting structures protruding beyond the main surface of the first conductive type semiconductor layer;a transparent electrode layer covering at least a portion of each of the plurality of vertical type light-emitting structures; and a selected one of the first conductive type semiconductor layer and the insulation-filling layer has an uneven outer surface opposite to an inner surface of the selected one, the inner surface facing the plurality of vertical type light-emitting structures, and', 'at least a portion of the insulation-filling layer directly contacts the transparent electrode layer., 'an insulation-filling layer on the transparent electrode layer, the insulation-filling layer extending parallel to the main surface of the first conductive type semiconductor layer to cover an upper portion ...

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Номер записи: 19
18-06-2020 дата публикации

Method of manufacturing display module using led

Номер: US20200194417A1
Автор: Ha Nul YOO, Han Kyu Seong, Ji Hye YEON, Su Hyun JO, Sung Hyun SIM, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

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Номер записи: 20
26-07-2018 дата публикации

LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME

Номер: US20180211993A1
Автор: Kim Yong Il, LIM Wan Tae, Sim Sung Hyun, YEON Ji Hye, YOO Hanul
Принадлежит:

A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer. 120-. (canceled)21. A light emitting device package , comprising:a substrate having at least one light-emitting window defined by a partition structure;a semiconductor light-emitting unit corresponding to the at least one light-emitting window having a first surface and a second surface opposite the first surface, and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked; andat least one wavelength conversion unit disposed inside the at least one light-emitting window, configured to provide light having a wavelength different from light emitted by the semiconductor light-emitting unit,wherein in a region of the partition structure, a trench is formed.22. The light emitting device package of claim 21 , further comprising a metal ...

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Номер записи: 21
31-08-2017 дата публикации

LIGHT-EMITTING DIODE (LED) DEVICE

Номер: US20170250316A1
Автор: KIM Jung-Sub, LEE Jin-Sub, Lim Wan-tae, Noh Hye-seok, PARK Young-Soo, Yeon Ji-hye, Yoo Ha-nul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer. 1. A light-emitting diode (LED) device comprising:a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;a separation layer configured to electrically insulate the light-emitting structures from each other;a plurality of phosphor layers on second surfaces separate, respective light-emitting structures of the plurality of light-emitting structure, each phosphor layer configured to filter a different color of light from light emitted by the light-emitting structures; anda partition layer between the phosphor layers, such that the partition layer separates the phosphor layers from each other, the partition layer including at least one of a substrate structure, an insulation structure, and a light reflecting structure.2. The LED device of claim 1 , further comprising:a reflective layer between an electrode layer, of the ...

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Номер записи: 22
20-09-2018 дата публикации

Semiconductor light emitting apparatus and method of manufacturing same

Номер: US20180269360A1
Автор: Han Kyu Seong, Ji Hye YEON, Jung Sub Kim, Yong Ii Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

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Номер записи: 23
11-11-2021 дата публикации

Semiconductor light emitting device

Номер: US20210351330A1
Автор: Ha Nul YOO, Ji Hoon Yun, Ji Hye YEON, Jun Bu YOUN, Su Hyun JO, Sung Hyun SIM, Yong Ii Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

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Номер записи: 24
04-10-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20180286915A1
Автор: LIM Wan Tae, Seong Han Kyu, Sim Sung Hyun, YEON Ji Hye, YOO Hanul
Принадлежит:

A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate. 1. A semiconductor light emitting device , comprising:a plurality of light emitting cells, each light emitting cell of the plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers;an insulating layer on the plurality of light emitting cells, the insulating layer having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells;a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other;a transparent support substrate on the insulating layer and the connection electrode; anda transparent ...

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Номер записи: 25
03-10-2019 дата публикации

Light emitting diode display device

Номер: US20190305202A1
Автор: Chung Sun Lee, Han Kyu Seong, Ji Hwan HWANG, Ji Hye YEON, Tan Sakong, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

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Номер записи: 26
10-10-2019 дата публикации

Light emitting diode display device

Номер: US20190312083A1
Автор: Ji Hye YEON, Jong Uk Seo, Tan Sakong, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

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Номер записи: 27
10-10-2019 дата публикации

Method of fabricating light emitting device package

Номер: US20190312182A1
Автор: Hanul YOO, Hye Seok NOH, Ji Hye YEON, Sung Hyun SIM, Wan Tae Lim, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

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Номер записи: 28
15-10-2020 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20200328329A1
Автор: JO Su Hyun, Kim Yong II, Sim Sung Hyun, YEON Ji Hye, YOO Ha Nul, YOUN Jun Bu, Yun Ji Hoon
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer. 1. A semiconductor light emitting device , comprising:a plurality of light emitting structures;an isolation layer insulating the plurality of light emitting structures from one another;a partition layer formed on the isolation layer and providing a plurality of light emitting windows respectively corresponding to the plurality of light emitting structures; anda three-layer reflective structure covering side walls of the partition layer,wherein the reflective structure comprises:a first protective layer covering the side walls of the partition layer;a reflective layer covering the first protective layer and disposed on the side walls of the partition layer; anda second protective layer covering the reflective layer,wherein the first protective layer covers a top surface of the partition layer.2. The semiconductor light emitting device of claim 1 , further comprising a plurality of wavelength converting layers respectively disposed in the plurality of light emitting windows claim 1 , and emitting lights having different colors claim 1 ,wherein the partition layer is integrally formed such that portions of the partition layer, respectively isolating the wavelength converting layers from one another, are connected to one another, andwherein the isolation layer is integrally formed such that portions of the isolation layer, respectively insulating the plurality of light ...

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Номер записи: 29
05-12-2019 дата публикации

Method of manufacturing display module using led

Номер: US20190371779A1
Автор: Ha Nul YOO, Han Kyu Seong, Ji Hye YEON, Su Hyun JO, Sung Hyun SIM, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

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Номер записи: 30
30-06-2020 дата публикации

Semiconductor light emitting device

Номер: US10700246B2
Автор: Ha Nul YOO, Ji Hoon Yun, Ji Hye YEON, Jun Bu YOUN, Su Hyun JO, Sung Hyun SIM, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

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Номер записи: 31
24-04-2018 дата публикации

Light emitting device package and display device using the same

Номер: US9954028B2
Автор: Hanul YOO, Ji Hye YEON, Sung Hyun SIM, Wan Tae Lim, Yong Il Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

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Номер записи: 32
13-10-2015 дата публикации

Semiconductor light-emitting device

Номер: US9159882B2
Автор: Dong-Hoon Lee, Geon-Wook YOO, Ji-Hye YEON, Ju-Bin Seo, Kyung-Wook Hwang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

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Номер записи: 33
04-02-2016 дата публикации

半導体発光素子の製造方法

Номер: JP2016021556A
Автор: Dae Myung Chun, Han Kyu Seong, Hyun Seong KUM, Jae Hyeok HEO, Ji Hye YEON, Young Jin Choi, 在 赫 許, 在 赫 許, 大 明 千, 大 明 千, 智 慧 延, 智 慧 延, 榮 進 崔, 榮 進 崔, 漢 珪 成, 漢 珪 成, 現 聖 琴, 現 聖 琴
Принадлежит: SAMSUNG ELECTRONICS CO LTD

【課題】本発明は、半導体発光素子の製造方法に関する。【解決手段】本発明の実施形態による半導体発光素子の製造方法は、基板上に第１の導電型半導体からなるベース層を形成する段階、上記ベース層上に、上記ベース層の一部が露出した複数の開口部を有するマスク層及びモールド層を形成する段階、上記ベース層から上記開口部に延長される本体部及び上記本体部上に配置される錐状の上端部を含む複数の第１の導電型半導体コアを形成する段階、及びそれぞれの上記複数の第１の導電型半導体コア上に活性層及び第２の導電型半導体層を順次形成する段階を含み、上記複数の第１の導電型半導体コアを形成する段階は、上記上端部の頂点が上記本体部の中心縦軸上に位置するように第１の領域を形成する段階、上記モールド層を除去する段階、及び上記本体部が六角柱状の形状を有するように上記第１の領域上に追加成長領域を形成する段階を含む。【選択図】図１

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Номер записи: 34
12-12-2017 дата публикации

Method of manufacturing nanostructure semiconductor light-emitting device

Номер: US09842960B2
Автор: Dae Myung Chun, Han Kyu Seong, Hyun Seong KUM, Jae Hyeok HEO, Ji Hye YEON, Jin Sub Lee, Jung Sub Kim, Young Jin Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

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Номер записи: 35
14-03-2017 дата публикации

Nanostructure semiconductor light emitting device having rod and capping layers of differing heights

Номер: US09595637B2
Автор: Dae Myung Chun, Han Kyu Seong, Hyun Seong KUM, Jae Hyeok HEO, Ji Hye YEON, Jin Sub Lee, Young Jin Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.

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Номер записи: 36
24-01-2017 дата публикации

Semiconductor light emitting device and manufacturing method thereof

Номер: US09553235B2
Автор: Dae Myung Chun, Han Kyu Seong, Hyun Seong KUM, Jae Hyeok HEO, Ji Hye YEON, Young Jin Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

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Номер записи: 37