Nanostructure semiconductor light emitting device having rod and capping layers of differing heights

14-03-2017 дата публикации

Номер:

US09595637B2

Автор: Dae Myung Chun, Han Kyu Seong, Hyun Seong KUM, Jae Hyeok HEO, Ji Hye YEON, Jin Sub Lee, Young Jin Choi

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L22 H01L222 H01L2224 H01L2224/H01L2224/3 H01L2224/32 H01L2224/322 H01L2224/3222 H01L2224/32225 H01L2224/4 H01L2224/48 H01L2224/480 H01L2224/4809 H01L2224/48091 H01L2224/482 H01L2224/4822 H01L2224/48227 H01L2224/4824 H01L2224/48247 H01L2224/4825 H01L2224/48257 H01L2224/7 H01L2224/73 H01L2224/732 H01L2224/7326 H01L2224/73265 H01L29 H01L292 H01L2924 H01L2924/H01L2924/1 H01L2924/18 H01L2924/181 H01L3 H01L33 H01L33/H01L33/0 H01L33/00 H01L33/007 H01L33/08 H01L33/2 H01L33/20 H01L33/24 H01L33/3 H01L33/32 H01L33/4 H01L33/42 H01L33/44

IPC - классификация

H H0 H01 H01L H01L3 H01L33 H01L33/H01L33/2 H01L33/20 H01L33/24 H01L33/3 H01L33/32

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