Culture method for complete sterile line of dominant genic male sterility in brassica napus

The invention discloses a culture method for a complete sterile line of dominant genic male sterility in brassica napus, which comprises the steps of: carrying out pollination by taking a homozygous sterile plant with the genotype of MsMsrfrf as a female parent and a temporary maintainer line with the genotype of msmsrfrf as a male parent, and harvesting complete sterile line of seeds from the maternal plant after ripening. Compared with the traditional method, because the female parent is a homozygous sterile plant only with dominant genic male sterility, the density of sterile plants is kept at a normal level, and the step of pulling out fertile plants is dispensed with, therefore, the purity of complete sterile seeds reaches 100%, and meanwhile, the output of the complete sterile line of seeds is improved.

Multi-layer composite film suitable for MWT (Metal Wrap Through) solar cell and manufacturing method of multi-layer composite film

The invention discloses a multi-layer composite film suitable for an MWT solar cell and a manufacturing method thereof, the multi-layer composite film is located on an aluminum oxide layer on the surface of a silicon wafer, and the multi-layer composite film sequentially comprises a second silicon nitride layer, a silicon carbonitride layer, a third silicon nitride layer, a silicon oxynitride layer and a silicon oxide layer from inside to outside; wherein the third silicon nitride layer is formed by stacking a fourth silicon nitride layer of 19-21 nm, a fifth silicon nitride layer of 20-30 nm and a sixth silicon nitride layer of 30-40 nm. According to the invention, the silicon nitride film is firstly plated between the aluminum oxide film and the silicon nitride film, the aluminum oxide is reconstructed, then the silicon carbonitride film is plated, and the refractive index of the silicon carbonitride is higher than that of the silicon nitride, so that the film layer with high refractive ...

Orange yellow flower homozygous two-type line of dominant genic male sterility in brassica napus L. and application thereof

Based on the inheritance principles that the sterility of the cabbage type rape dominant genic male is restrained and controlled by the Ms sterility gene and the Rf gene epigyny and the characters of the fresh wreath goldenrod and orange yellow flower are controlled by two pairs of lapped genes, the method adopts orange yellow flower homozygosis amphitypy line and fresh yellow flower temporary maintainer line to produce the full male sterile line and then using the full male sterile line together with the recovery line to produce coenospecies. Compared with the original methods, the method of the invention, for the reason that the normal plant in the homozygosis amphitypy line is pullout in delay or in leakage while the normal plant appeared in the full male sterile line is still presented as orange yellow flower, thus when cross-fertilizing with the recovery line for producing seeds, these normal plants of the orange yellow flowers is easy for recognizing in the male sterile line of the ...

Orange yellow flower homozygous two-type line of dominant genic male sterility in brassica napus L. and application thereof

Based on the inheritance principles that the sterility of the cabbage type rape dominant genic male is restrained and controlled by the Ms sterility gene and the Rf gene epigyny and the characters of the fresh wreath goldenrod and orange yellow flower are controlled by two pairs of lapped genes, the method adopts orange yellow flower homozygosis amphitypy line and fresh yellow flower temporary maintainer line to produce the full male sterile line and then using the full male sterile line together with the recovery line to produce coenospecies. Compared with the original methods, the method ofthe invention, for the reason that the normal plant in the homozygosis amphitypy line is pullout in delay or in leakage while the normal plant appeared in the full male sterile line is still presented as orange yellow flower, thus when cross-fertilizing with the recovery line for producing seeds, these normal plants of the orange yellow flowers is easy for recognizing in the male sterile line of the ...

Solar energy silicon chip case

The utility model relates to a container is deposited with the silicon chip to solar cell production, especially relates to a solar energy silicon chip case, comprises a box bod, box body one end is equipped with the opening, and the opening part is equipped with the baffle, baffle and box body rotate to be connected, and the inner wall is equipped with a plurality of mouths that blow afloat to the side of the relative box body of opening, be equipped with the counter on the box body side. The utility model provides a pair of solar energy silicon chip case, simple structure, convenient operation, the gas that blows off have reduced the speed of silicon chip whereabouts, and the silicon chip of placing can not damage, and can place according to the specification.

Novel diffusion process capable of increasing polysilicon open-circuit voltage

The invention discloses a novel diffusion process capable of increasing polysilicon open-circuit voltage. The novel diffusion process includes: 1), placing a silicon wafer in a diffusion furnace, and heating to 800 DEG C; 2), feeding a source, namely feeding diffusion nitrogen, oxygen and purging nitrogen into the diffusion furnace at the temperature according to a feeding flow ratio of 3:1:17 for 10-25 minutes; 3), heating for knot pushing, namely, using 10-25 minutes to increase temperature in a diffusion furnace pipe to be 850-860 DEG C, and continuously feeding purging nitrogen and oxygen with a feeding flow ratio of 10:3 into the diffusion furnace pipe in the whole process of heating; 4), using 10-25 minutes to lower temperature in the diffusion furnace pipe to be 750-800 DEG C, and continuously feeding purging nitrogen into the diffusion furnace pipe in the whole process of cooling; 5), taking the silicon wafer out. By the novel diffusion process, surface compositing speed of the ...

Diffusion process for making solar cells

The invention discloses a diffusion process for making solar cells, comprising the following steps: controlling the temperature inside a furnace at 840 DEG C; feeding oxygen at 200-500ml/min and small nitrogen at 700-1000ml/min under the temperature, and feeding big nitrogen at 10000-15000mL/min, wherein the duration is 8-12min; continuing feeding oxygen at 200-500ml/min and small nitrogen at 700-900ml/min, and feeding big nitrogen at 10000-15000mL/min, wherein processing lasts 11-16min; stopping feeding phosphorus source, reducing the temperature to 700-780 DEG C in 25-40min, continuously feeding oxygen at 2000-2500ml/min and feeding big nitrogen at 10000-15000ml/min in the whole cooling process, and then taking a silicon wafer out. The problem that ohmic contact difference is caused by too much reduction of the phosphorus concentration in the diffusion process and the problem that the uniformity is poor due to the difference between crystal boundary and crystal lattice positions on polycrystalline ...

Positive electrode of solar cell

Mushroom stick punching and inoculating device based on double-crank-slider principle and puncher

The invention relates to a mushroom stick punching and inoculating device based on the double-crank-slider principle, which comprises a workbench, two punching and inoculating mechanisms are arranged on the upper surface of the workbench, a supporting assembly for placing mushroom sticks is further arranged on the upper surface of the workbench, and the supporting assembly is located between the two punching and inoculating mechanisms. A pressing mechanism is connected between the two movable strips, the pressing mechanism is used for inoculating fungus materials in the punching barrel to fungus sticks, a first double-crank sliding block mechanism is installed on the side wall of the side plate, and the first double-crank sliding block mechanism is used for driving the movable plate to slide in the sliding rail and driving the movable strips to slide on the movable plate. The automatic punching and inoculating process is achieved, the production efficiency is improved, meanwhile, due to ...

Deposition reflecting film production process

The invention discloses deposition reflecting film production process. The steps of the process include: (1) inserting a silicon wafer into a graphite boat, and feeding the graphite boat into a heating furnace; (2) heating up the heating furnace, and introducing ammonia gas and radio frequency in a heating-up process to perform a pre-deposition process; (3) introducing ammonia gas and silane to perform a deposition process; and (4) taking out the deposited silicon wafer, thereby completing the whole production process. By performing the pre-deposition process while heating up the heating furnace, the purposes of optimizing the production process and improving production efficiency are achieved.

Method for restoring outer blade of graphite boat

The invention discloses a method for restoring an outer blade of a graphite boat. The method includes the following steps that firstly, the replaced and damaged blade of the graphite boat is taken and cut into multiple repair blades, wherein each repair blade at least comprises two ceramic rod holes; secondly, the graphite boat with the damaged outer blade of the graphite boat is selected, the proper cut repair blades in the first step are selected according to the breakage situation of the outer blade of the graphite boat, the repair blades are fixed to the damaged outer blade of the graphite boat, and then restoration is finished. The broken blade of the graphite boat can be cut and then reused, the broken outer blade, with slight cracks or seams, of the graphite boat is reinforced, the conducting performance of the outer blade is not affected, the utilization rate of the graphite boat is increased, and production cost is greatly saved.

Positive electrode of solar cell

The embodiment of the invention discloses a positive electrode of a solar cell. The positive electrode comprises two main gate lines and a plurality of secondary gate lines vertical to the main gate lines, and each main gate line consists of a first gate line section and a second gate line section with the width smaller than that of the first gate line section. In the positive electrode of the solar cell, the width of parts of the gate line sections of the main gate lines is smaller than a normal width, so a shading area is reduced, and the power loss caused by gate line shading is reduced, and contact resistance between the gate lines and a silicon wafer is reduced; therefore, the conversion efficiency of the solar cell is improved. Furthermore, the width of the gate lines is shortened, so that the using amount of a sizing agent is reduced; therefore, the manufacturing cost of the solar cell is lowered.

Method for improving printing quality of battery pieces

The invention discloses a method for improving printing quality of battery pieces. The method comprises screening a poor-printing battery piece in solar battery pieces after silk-screen printing, repairing a poor-printing place of the battery piece using a silver slurry by means of a slurry pen, and performing drying sintering and subsequent technology steps on the repaired battery piece. Through slurry repairing, the battery piece having a printing defect is repaired, an eligibility criteria can be reached normally without remanufacturing, the printing quality of the battery pieces and the qualified rate of products are improved, and cost is greatly saved.

On -line measuring silicon chip device

The utility model belongs to the technical field of the product detection technique and specifically relates to an on -line measuring silicon chip device, including shell, first inductor, second inductor, track conversion door, measuring head, a transfer orbit and the 2nd transfer orbit, the shell sets up on a transfer orbit, be equipped with the observation door on the shell, detect the head and set up in the inboard top center of shell, detect and be equipped with first inductor on the just right transfer orbit of head, the 2nd transfer orbit sets up in transfer orbit below, and is equipped with track conversion door with a transfer orbit junction, is equipped with the second inductor on the track conversion door. The utility model discloses can carry out contactless, not damaged ground detection to the integrity of silicon chip, the bad piece autosegregation that will have the crackle comes out.

Asexual propagation and total-sterile-line production technology of recessive genic sterile homozygous sterile plants of brassica napus

The invention relates to an asexual propagation and total-sterile-line production technology of recessive genic sterile homozygous sterile plants of brassica napus, comprising the following steps of: selecting sterile plants in a recessive genic sterile homozygous two-type line by observing the flowering fertility according to a heredity principle that the recessive genic sterility of the brassica napus is interactively controlled by a, b sterile genes and rf epistatic suppression genes, taking lateral branches of the sterile plants and carrying out isolated culture, then carrying out asexual propagation after axenic seedlings are formed, transplanting test tube seedlings which have identical genetype with donor sterile plant parents into a female parent row of an isolated greenhouse, pollinating by using a temporary maintainer line in a male parent row to produce a sterile line. Compared with the prior art, as the female parent row only contains sterile plants of the homozygous two-type ...

Method for increasing percent of pass of saw mark cells

The invention discloses a method for increasing the percent of pass of saw mark cells. Saw marks of the cells are always kept in a specific direction in all steps of a preparation technology process, the saw mark direction is kept parallel with the auxiliary grid line direction, and thick points and other detects are avoided. With the adoption of the method, the yield and efficiency of silicon wafers cut with the existing silicon material cutting technology can be greatly increased, and the extra production cost is avoided.