Fahrerkabine und Arbeitsfahrzeug

Eine Fahrerkabine umfasst einen Fahrersitz (31), der auf einer Bodenfläche (30) vorgesehen ist, einen Steuerhebel (41), der seitlich des Fahrersitzes (31) vorgesehen ist und zumindest in einer Vorwärts/Rückwärtsrichtung betätigt wird, und eine Armlehne (51), die eine obere Fläche (52) umfasst und seitlich zum Fahrersitz (31) hinter dem Steuerhebel (41) vorgesehen ist. Die obere Fläche (52) umfasst einen nach vorne geneigten Abschnitt (66) und einen nach hinten geneigten Abschnitt (67) hinter dem nach vorne geneigten Abschnitt (66). Wenn die Bodenfläche (30) als Referenz definiert ist, nimmt die Höhe des nach vorne geneigten Abschnitts (66) in Richtung eines vorderen Endes (71) der oberen Fläche (52) in der Vorwärts-/Rückwärtsrichtung ab. Wenn die Bodenfläche (30) als Referenz definiert ist, nimmt der nach hinten geneigte Abschnitt (67) in Richtung eines hinteren Endes (72) der oberen Fläche (52) in der Vorwärts-/Rückwärtsrichtung in der Höhe ab.

Schiebetür mit Trägermechanismus

Cyano-substituierte Verbindungen, die Ätherbindungen enthalten.

Navigationsgerät

Ein Navigationsgerät mißt die Position eines Fahrzeugs auf der Basis einer Positionsinformation und führt eine Streckenleitung auf der Basis der Karteninformation durch. Das Navigationsgerät umfaßt eine Eingabeeinheit (14), um eine spezielle Information über ein Produkt oder dgl. und Auswahlbedingungen für das Produkt oder dgl. einzugeben, eine Übertragungseinheit (12), um die spezielle Information an eine externe Speichereinheit zu liefern, in welcher die spezielle Information über das Produkt oder dgl. gespeichert wird, eine Empfangseinheit (13), um die spezielle Information zu empfangen, welche von der externen Speichereinheit übertragen wird, eine Leseeinheit, um eine optimale spezielle Information zu lesen, die zu den Auswahlbedingungen von der empfangenen speziellen Information paßt, eine Anzeigeeinheit, um die gelesene spezielle Information anzuzeigen, und eine Leiteinheit, um automatisch die Position eines Anbieters für das Produkt oder dgl. auf der Basis der gelesenen speziellen ...

III-V Halbleiter und Verfahren zur seiner Herstellung

III-V Halbleiter, umfassend mindestens ein Substrat, eine Pufferschicht der allgemeinen Formel InuGavAlwN (wobei 0 ≤ u ≤ 1,0 ≤ v ≤ 1,0 ≤ w ≤ 1, u + v + w = 1) und eine III-V Halbleiterkristallschicht der allgemeinen Formel InxGayAlzN (wobei 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, x + y + z = 1) in dieser Reihenfolge, wobei die Pufferschicht eine Dicke von 5 Å oder mehr und 90 Å oder weniger aufweist.

Nitride compound semiconductor and process for producing the same

3-5 group compound semiconductor and method for preparation thereof

... (1) A 3-5 group compound semiconductor which has a substrate, a buffer layer represented by a general formula: InuGavAlwN, wherein 0 & u, v and w & 1, and u + v + w = 1, formed on the substrate and a crystalline layer of a 3-5 group compound semiconductor represented by a general formula: InxGayAlzN, wherein 0 & x, y and z & 1, and x + y + z = 1, formed on the buffer layer, characterized in that said buffer layer has a film thickness of 5 to 90 Ñ; and (2) a method for preparing the 3-5 group compound semiconductor, characterized in that it comprises an initial step of growing the buffer layer represented by the general formula: InuGavAlwN so as for the layer to have a film thickness of 5 to 90 Ñ at a temperature lower than that for the growth of the crystalline layer of the 3-5 group compound semiconductor and a subsequent step of growing said crystalline layer of the 3-5 group compound semiconductor represented by the general formula: InxGayAlzN.

Compound semiconductor and method for producing same

PHOTO SENSOR AND PHOTO SENSOR SYSTEM

PHOTO SENSOR SYSTEM AND OPERATING PROCEDURE FOR IT

Magnesium alloy

Provided is a magnesium alloy which contains, in terms of mass%, 1.0-2.0% of Zn, 0.05-0.80% of Zr, and 0.05-0.40% of Mn, with the remainder comprising Mg and unavoidable impurities. The magnesium alloy may further contain, in terms of mass%, not less than 0.005% but less than 0.20% of Ca.

Photosensor and photosensor system

DRY TRANSFER ARTICLE

Photosensor system and drive control method thereof

METHOD FOR MANUFACTURING SILICAN CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate.

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A silicon carbide substrate (1) with which manufacturing cost of a semiconductor device using the silicon carbide substrate can be reduced is provided with: a base substrate (10) composed of a silicon carbide; and a SiC layer (20), which is composed of single crystal silicon carbide other than the silicon carbide of the base substrate (10) and is disposed on the base substrate (10) in contact with the base substrate. Thus, in the silicon carbide substrate (1), the silicon carbide single crystal can be effectively used.

SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE

An SiC ingot (10a) includes a bottom face (12a) having 4 sides; four side faces (12b, 12c, 12d, 12e) extending from the bottom face (12a) in a direction intersecting the direction of the bottom face (12a); and a growth face (12f) connected with the side faces (12b, 12c, 12d, 12e), located at a side opposite to the bottom face (12a). At least one of the bottom face (12a), the side faces (12b, 12c, 12d, 12e), and the growth face (12f) is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

SUBSTRATE, SUBSTRATE WITH THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Provided are a substrate which suppresses deterioration of processing accuracy of a semiconductor device due to the warping of the substrate, a substrate provided with a thin film, a semiconductor device formed using the abovementioned substrate, and a method for manufacturing said semiconductor device. In the substrate (1), the diameter of the main surface (1a) is 2 inches or more, the bow value of the main surface (1a) is -40 µm to -5 µm, and the warp value of the main surface (1a) is 5 µm to 40 µm. The value of the surface roughness (Ra) of the main surface (1a) of the substrate (1) is preferably 1 nm or less and the value of the surface roughness (Ra) of the main surface (1b) is preferably 100 nm or less.

AIR-COOLED TURBINE BLADE.

4-N-ALKYLBENZOYLOXY-3' FLUOR-4' CYANOBENZOL CONNECTIONS.

3-FLUOR-4-CYANOPHENOL-DERIVATE.

Color adjusting apparatus, image forming apparatus, color adjusting method and computer readable medium

The present invention discloses a color adjusting apparatus which is provided with: a color signal receiving part that receives input of color signals; a distribution density calculating part that calculates a distribution density in a certain color space concerning the color signals received by the color signal receiving part; an adjustment range setting part that sets an adjustment range where the color signals are adjusted in the color space on the basis of the distribution density calculated by the distribution density calculating part; and a color adjusting part that adjusts the color signals included in the adjustment range set by the adjustment range setting part.

Diversity reception device

It is possible to provide a diversity reception device capable of reducing power consumption and increasing a battery service life by detecting a difference of reception qualities between reception branches and controlling start/stop of diversity operation according to the difference of the reception qualities. According to a difference between reception levels (A, B) as reception qualities of reception branches (13a, 13b), it is judged whether a desired diversity effect can be obtained. If it is judged that the desired diversity effect cannot be obtained, the diversity operation is stropped and power supply to the reception branch not to be used is stopped and the synthesis process operation is stopped.

Method and system for providing a multimedia presentation to a mobile device user

SEMICONDUCTOR DEVICE TO RELATE TO SEMICONDUCTOR DEVICE HAVING HOLLOW STRUCTURE

PURPOSE: A semiconductor device is provided to embody stable operation even if a package is deformed by preventing deformation of the package caused by external stress or thermal expansion from being directly transferred to a semiconductor device. CONSTITUTION: A cavity(101a,101b) is formed in a package. A support member protrudes from one surface of the cavity. A semiconductor device is fixed to the support member in a manner that doesn't come in contact with any surface of the cavity. The support member can be a terminal with conductivity. The semiconductor device has a first electrode pad electrically and physically connected to the support member, fixed to the support member by the support member and the first electrode pad. © KIPO 2007 ...

Capacitive sensor and device

A capacitive sensor includes first transparent electrodes arranged in a first direction; second transparent electrodes arranged in a second direction intersecting the first direction and containing conductive nanowires; coupling parts provided integrally with the first transparent electrodes; and bridge wiring parts provided independently of the second transparent electrodes so as to intersect the coupling parts and electrically connecting two adjacent second transparent electrodes to each other. Each of the bridge wiring parts is composed of contact portions in contact with the second transparent electrodes and a bridge portion provided continuously with the contact portions and separated from the second transparent electrodes. Each of the contact portions has a multilayer structure, and a layer including a portion in contact with the second transparent electrode is formed of a zinc-oxide-based material. A surface of the bridge portion located farther from the substrate is formed of an ...

Transparent electrically conductive oxide film for an electronic apparatus and related method

A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive ...

Multifunctional mobile electronic device

The main body section and the cover section, those of which are combined with the coupling section so that the electronic device can pivot, constitute the present invention. There is an input key section is provided in the opposed surface of the main body section meeting the cover section when the device is folded. There is the main display section provided in the opposing surface of the cover section meeting the main body section when the device is folded. Because of this, the electronic device can be used easier as a mobile phone. Furthermore, the electronic device also can be used easier as a still camera because the device can be used as a still camera immediately whenever the user wants to, even when the electronic device is in stand-by mode of mobile phone mode.

Surface acoustic wave device

There is provided a surface acoustic wave device which can prevent a breakage of electrodes and electrical breaks, decrease an insertion loss of elements, and enhance a Q-factor of resonators. Interdigital electrode sections and each have a laminated structure of a base layer made of TiN (titanium nitride) or TiO_xN_y and a main electrode layer deposited to come in contact with an upper surface of the base layer. The main electrode layer is deposited such that a {111} plane as a closest-packed plane of the main electrode layer has a constant gradient with respect to a surface of a substrate, and thus electromigration or stress migration can be suppressed in the interdigital electrode sections.

Liquid crystal display device

A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate.

On-vehicle apparatus and content providing method

The present invention is applied to, for example, a multimedia terminal having a function of navigation equipment and a function of playing back video and switches a display from a map display to a source display also with source switching operators 13P, 13R. In addition, menus of upper and lower hierarchies are simultaneously displayed to accept operations through a touch panel and a remote commander. In addition to a press-operable main rotary operator, a press-operable sub rotary operator is provided on a side surface. Among operations accepted through the main rotary operator, only a specific operation relating to content processing is accepted through the sub rotary operator.

COLOR CONTROL METHOD AND COLOR CONTROL APPARATUS

PROBLEM TO BE SOLVED: To control color while reducing influence to a color which is not an object of the color control even when a spatial shape in a color space including color data being the object of the color control is distorted. SOLUTION: An object area extraction part 30 extracts the object area of the color control by the unit of a pixel (color data) from a color image. A color gamut specifying closed space generation part 32 generates a color gamut specifying closed space 5 of an optional shape including the color data being the object of the color control. A closed space deformation part 34 deforms the color gamut specifying closed space 5 in a reproducible manner with movement of at least a part of a plurality of pieces of color data included in the color gamut specifying closed space 5. A closed space movement part 36 moves the color gamut specifying closed space 5 including representative color data within the color space while nearly keeping the mutual array order of a plurality ...

DIVERSITY RECEIVER AND DIVERSITY RECEIVING METHOD

PROBLEM TO BE SOLVED: To provide a diversity receiver and diversity receiving method for enabling a demodulation system of one system to switch antennas by antenna diversity without losing received data in a communication system that adopts a CDMA (code division multiple access) system. SOLUTION: A receiving system 6 receives an intermittent signal for standby transmitted by a base station for each slot cycle by a first antenna 1 or a second antenna 2, information about respective received field strength of the first antenna 1 and the second antenna 2 is obtained from the signal received by the receiving system 6, and one between the first antenna 1 and the second antenna 2 whose receiving environment is more satisfactory is switched and connected to the receiving system 6 on the basis of the information to perform speech communication when the standby shifts to speech communication. COPYRIGHT: (C)2004,JPO&NCIPI ...

MONITORING DEVICE

PROBLEM TO BE SOLVED: To exactly and effectively judge whether or not there is possibility of generating a fault in magnetic tape drive devices 371-37n. SOLUTION: A memory information read processing part 41 of a magnetic tape library device 30 reads information regarding reading of data or writing of data which the magnetic tape drive devices 371-37n perform to magnetic tape cartridges 351-35m from memories of the magnetic tape cartridges 351-35m having a built-in magnetic tape and a maintenance/replacement judgment part 48 performs judgment regarding maintenance or replacement of the magnetic tape drive devices 371-37n based on the read information. COPYRIGHT: (C)2006,JPO&NCIPI ...

IC SOCKET

PROBLEM TO BE SOLVED: To provide an IC socket capable of obtaining a stable electric connection with an IC package, or which a moving plate will not warp. SOLUTION: The IC socket is provided with a socket main body having a housing recess formed with an opening upward, a contact fixed to the socket main body with its tip part formed of a pair of elastic contact pieces, and a moving plate fitted inside the housing recess of the socket main body in free movement toward a given direction. The pair of the elastic contact pieces penetrates through contact-housing holes formed at the moving plate, and at the same time, one elastic contact piece comes in contact with the moving plate to be deviated by the movement of the moving plate and a protruded body is formed above the moving plate contacting position of the one elastic contact piece. COPYRIGHT: (C)2004,JPO ...

PUDDLING WORK MACHINE AND MUDGUARD USED FOR THE SAME

PROBLEM TO BE SOLVED: To make mudguards mounted in front of a puddling work machine to have the function of pulling floated products, such as straws, floated on the muddy water of a field into the inside of a shield cover. SOLUTION: The puddling work machine 10 mounted on the rear portion of a tractor 20 and having a tilling rotor 6 which receives a power from the tractor 20 and is rotated on a horizontal axis and a shield cover 2 for covering the upper side of the tilling rotor 6 is characterized by connecting mudguards 1 to the travel direction front side of the shield cover 2. The lower end portions 1f of the mudguards 1 are inclined from the downward to the upward from both the lateral sides to the central side of the puddling work machine 10 to the central portion side. COPYRIGHT: (C)2010,JPO&INPIT ...

PREPATATION OF CURABLE RESIN FOR COATING

PURPOSE: To prepara a curable resin suitable for production of a light color ink, free from ill odor and having improved color, by esteifying (meth) acrylic acid with a hydroxyl group-containing resin prepared by hydrogenation of a specific resin prepared from a five membered ring compound, etc. COPYRIGHT: (C)1978,JPO&Japio ...

THIN-FILM CAPACITOR FOR COMPENSATING TEMPERATURE

PROBLEM TO BE SOLVED: To provide a thin-film capacitor, capable of facilitating reductions in size, thickness and weight and compensating temperature and to provide a thin film capacitor satisfying the above features and further having a superior Q-value in a high frequency band. SOLUTION: The thin-film capacitor comprises two or more first dielectric thin films 4 and 4 and second dielectric thin films 5, having different permittivities between a pair of electrodes 3 and 7. In this capacitor, the absolute value of a capacity temperature coefficient of the first thin film can be set to 50 ppm/°C or less, and a capacity temperature coefficient of the second thin film is negative, and its absolute value can be set to 500 ppm/°C or more. COPYRIGHT: (C)2002,JPO ...

PASTA SAUCE

PROBLEM TO BE SOLVED: To provide a pasta sauce allowing eating of a cream-based pasta dish only by being dressed with boiled pasta, and a great reduction of the amount of the pasta sauce required for one meal of the cream-based pasta dish. SOLUTION: The cream-based pasta sauce includes: 20-60 mass% of an edible oil and fat; 5-21 mass% of water; 3-20 mass% of milk or a dairy product in terms of the non-fat milk solid; and a polyhydric alcohol. The content of the polyhydric alcohol, based on 100 pts.mass of the edible oil and fat, is 30-150 pts.mass. The total light transmittance (control: fresh water; wavelength: 390 nm; optical pass length: 5 mm) is 13-35%, and the total light transmittance when diluted 3-fold with water is 0.1-12%. COPYRIGHT: (C)2011,JPO&INPIT ...

Integrierte Halbleiterschaltung mit Fehlererkennungsschaltung

Flüssigkeit mit gleichzeitig magnetischen und elektrorheologischen Effekten

Elektrorheologische Flüssigkeit mit karbonhaltigen Teilchen in anisotroper Form

Arbeitsfahrzeug und Rundumkennleuchte

Der Hydraulikbagger (100) vorliegender Erfindung ist ein Arbeitsfahrzeug, das mit einem Arbeitsgerät (4) ausgestattet ist und eine Kabine (5) und eine Rundumkennleuchte (10) hat. Die Rundumkennleuchte (10) ist abnehmbar auf einem Dach (5b) der Kabine (5) angeordnet. Die Rundumkennleuchte (10) hat einen Rundumkennleuchten-Hauptkörper (20), ein Befestigungselement (30) und einen Griff (40). Das Befestigungselement (30) ist an der Unterseite des Rundumkennleuchten-Hauptkörpers (20) angeordnet und wird für die Befestigung des Rundumkennleuchten-Hauptkörpers (20) an dem Dach (5b) verwendet. Der Griff (40) ist portalförmig und an dem Befestigungselement (30) festgelegt und hat einen ersten stangenförmigen Abschnitt (41), einen zweiten stangenförmigen Abschnitt (42) und einen dritten stangenförmigen Abschnitt (43). Der erste stangenförmige Abschnitt (41) und der zweite stangenförmige Abschnitt (42) sind von dem Befestigungselement (30) nach oben weisend ausgebildet. Der dritte stangenförmige Abschnitt ...

Siliziumcarbidpulver und Verfahren für die Herstellung von Siliziumcarbidpulver

Es werden ein Siliziumcarbidpulver für die Siliziumcarbidkristallzüchtung und ein Verfahren für die Herstellung eines Siliziumcarbidpulvers angegeben. Das Siliziumcarbidpulver wird durch Erhitzen eines Gemisches (3) aus einem Siliziumstückchen (1) und einem Kohlenstoffpulver (2) und anschließendem Pulverisieren des Gemisches ausgebildet und besteht im wesentlichen aus Siliziumcarbid.

Phosphor

Producing a nitride compound semiconductor

There is provided a process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x+y+z=1, 01), characterized in that a non-doped nitride compound semiconductor 4 (A) represented by a general formula, InaGabAlcN (where a+b+c=1, 0 Подробнее

PEPTIDE WITH LAMININ EFFECTIVENESS.

PEPTIDES WITH LAMININ ACTIVITY

Peptides which have laminin-like activity are useful in blocking tumor metastases and are active in cell migration and cell adhesion. All of the subject peptides have the amino acid sequence tyrosine-isoleucine-glycine-serine-arginine.

FE-BASED AMORPHOUS ALLOY RIBBON AND METHOD FOR PRODUCING SAME, IRON CORE, AND TRANSFORMER

One aspect of this invention provides an Fe-based amorphous alloy ribbon comprising a free solidification surface and a rolled surface, having a plurality of rows of laser irradiation marks, each comprising a plurality of laser irradiation marks, on the free solidification surface and/or the rolled surface. Of the plurality of rows of laser irradiation marks provided in the casting direction of the Fe-based amorphous alloy ribbon, the line interval, which is the interval between center lines in the central part in the width direction which intersects with the casting direction, between adjoining rows of laser irradiation marks, falls within the range of 10 mm to 60 mm, inclusive, and the spot interval, which is the interval between center points of a plurality of laser irradiation marks in each of the plurality of rows of laser irradiation marks falls within the range of 0.10 mm to 0.50 mm, inclusive. The numerical density D of laser irradiation marks (=(1/d1)×(1/d2), where d1 is the line ...

SEMICONDUCTOR DEVICE

Disclosed is a MOSFET (100) which is a semiconductor device that can be reduced in the on-resistance, while being suppressed in the occurrence of stacking faults due to a heat treatment during the device production process. The MOSFET (100) comprises a silicon carbide substrate (1), an active layer (7) that is formed from single crystal silicon carbide and arranged on one main surface of the silicon carbide substrate (1), a source contact electrode (92) that is arranged on the active layer (7), and a drain electrode (96) that is formed on the other main surface of the silicon carbide substrate (1). The silicon carbide substrate (1) contains a base layer (10) that is formed from silicon carbide and an SiC layer (20) that is formed from single crystal silicon carbide and arranged on the base layer (10). The impurity concentration of the base layer (10) is higher than 2 × 1019 cm-3, and the impurity concentration of the SiC layer (20) is higher than 5 × 1018 cm-3 but lower than 2 × 1019 cm ...

SEMICONDUCTOR DEVICE

Disclosed is a JFET (100) which is a semiconductor device that can be manufactured at a reduced cost. The JFET (100) comprises a silicon carbide substrate (1), an active layer (8) that is formed from single crystal silicon carbide and arranged on one main surface of the silicon carbide substrate (1), a source electrode (92) that is arranged on the active layer (8), and a drain electrode (93) that is arranged on the active material layer (8) at a distance from the source electrode (92). The silicon carbide substrate (1) contains a base layer (10) that is formed from single crystal silicon carbide and an SiC layer (20) that is arranged on the base layer (10). The defect density of the SiC layer (20) is lower than the defect density of the base layer (10).

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

At least one single crystal substrate (11), each having a backside surface (B1) and made of silicon carbide, and a supporting portion (30) having a main surface (FO) and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface (B1) and main surface (FO) is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface (B1) and main surface (FO). The surface layer is removed at least partially. Following this removing step, the backside surface (B1) and main surface (FO) are connected to each other.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

In the provided method for manufacturing a semiconductor substrate, a first silicon carbide substrate (11) has a first top surface (F1) and a first lateral surface. A second silicon carbide substrate (12) has a second top surface (F2) and a second lateral surface. The second lateral surface is disposed such that a gap, which has an opening between the respective first and second top surfaces (F1, F2) of the first and second silicon carbide substrates (11, 12), is formed between the first and second lateral surfaces. A plug part (70) that plugs the gap is provided above the opening. Depositing a sublimate from the first and second lateral surfaces onto the plug part (70) forms a joining part (BDa) that connects the first and second lateral surfaces so as to plug up the opening. After the step in which the joining part (BDa) is formed, the plug part (70) is removed.

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A step for preparing a laminate (TX) is performed in such a manner that each substrate of a first single crystal substrate group (10a) and a first base substrate (30a) face each other, each substrate of a second single crystal substrate group (10b) and a second base substrate (30b) face each other, and the first single crystal substrate group (10a), the first base substrate (30a), an insertion part (60X), the second single crystal substrate group (10b), and the second base substrate (30b) are stacked in this order in one direction. Next, the laminate (TX) is heated in such a manner that the temperature of the laminate (TX) reaches a temperature at which silicon carbide can sublime and a temperature gradient such that the temperature increases in the one direction within the laminate (TX) is formed. Consequently, a silicon carbide substrate (81) can be efficiently manufactured.

Operator protective guard, cabin for work machine with guard, and work machine

Provided is an operator protective guard for which the strength thereof can be ensured and which is readily machined and assembled. A front guard (100) comprises a plurality of first plate members (110) and second plate members (200) each comprising one plate. The first plate members (110) and the second plate members (120) are assembled in a lattice shape such that a first longitudinal direction (DR1) of each of the first plate members (110) and a second longitudinal direction (DR2) of each of the second plate members (120) intersect. The plurality of first plate members (110) are arranged radially, as viewed in the longitudinal direction. The plurality of second plate members (120) are arranged radially, as viewed in the longitudinal direction. Slits are formed in the first plate members (110) and the second plate members (120) are fitted into the slits and fixed by welding.

Muscle hardness meter

A muscle hardness meter which measures the hardness of a muscle tissue of the living organism comprises an auxiliary part (26) which is made to abut to the vicinity of a living organism section to be measured and applies a pressure to the vicinity of the section to be measured, an abutting part (40) which is made to abut to the section to be measured and applies a pressure to the section to be measured, a first pressure sensor (54) which measures pressures which are applied respectively from the section to be measured and the vicinity to the abutting part (40) and the auxiliary part (26) and outputs a first measurement result, a second pressure sensor (53) which measures the pressure applied from the section to be measured to the abutting part (40) and outputs a second measurement result,a notifying part (6) which notifies the second measurement result, and a control part which judges whether the first measurement result has reached a reference pressure value inputted previously and makes ...

SWITCH DEVICE

PURPOSE: To provide a switch device easy to assemble by further miniaturizing, low profiling and simplifying its structure. CONSTITUTION: The switch device has contacts 10a to 11c fixed to the case 10 and exposed on the bottom 10a, a conductor plate 15 making contact with a fixed contact 11b using a fixed contact 11a as the fulcrum, an operation piece 17 disposed movable up and down on the conductor plate 15 and movable around the shaft 17a, and a leaf spring 19 to energize the shaft 17a in the direction to the bottom 10a. A push operation piece 17b is projected from the side of the case 10. When the push operation piece 17b is pushed in by an operation knob 22 and the operation piece 17 turns by a predetermined angle, its slide 17d slides on the conductor plate 15 and turns it. When the operation piece 17 further turns by a predetermined angle, the push operation piece 17b operates the push switch 24 installed near in parallel. © KIPO & JPO 2004 ...

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

ICE MAKING DEVICE

PROBLEM TO BE SOLVED: To prevent an ice making power from being degraded by a rise in the temperature of manufactured ice by halting the operation of a water supply pump when the temperature of an ice making board detected with a temperature detector reaches a setting temperature when the operation is switched over from ice removal mode, which sprays ice removed water to the rear surface of the ice making board, to ice making operation mode. SOLUTION: When ice making operation is carried out, a water supply pump 12 starts its operation. The ice removal water discharged from the water supply pump 12 is supplied to an ice removal sprinkler. The ice removal water flows down on the rear surface of an ice making board 2 while a high temperature refrigerant discharged from a compressor 22 is distributed to a hot gas supply pipe 38 so that it may be supplied to a cooling tube 19, thereby removing the ice produced on the ice making board 2. At that time, a control section 40 takes in a signal output ...

ELECTRONIC PART PACKAGING METHOD

PURPOSE: To realize the high density package having high reliability of electric connection and an excellent cost performance in an electronic part packaging method for manufacturing circuit substrate by fitting the electronic part to a printed wiring board. CONSTITUTION: A conductive bonding part 30 is used as a junction material for electrically connecting the conductor patterns 12 of a printed board to the terminals of an electronic part while as for the conductive material comprising the coated surface of the conductive patterns 12, palladium, palladium alloy, nickel, nickel alloy, copper or copper alloy are used. COPYRIGHT: (C)1995,JPO ...

IMAGE PROCESSING DEVICE AND IMAGE PROCESSING PROGRAM

PROBLEM TO BE SOLVED: To provide an image processing device and an image processing program making gradation correction by grading even a flat area in an image where gradation is crushed. SOLUTION: An image gradation creation part 11 causes a flat image or an image area with little variation in gradation to be varied in gradation by, for example, smoothing processing with respect to an input color image, and creates new gradation to make the color image a gradation-created image. A color distribution analysis part 12 creates a gray level histogram of the gradation-created image whose gradation has been newly created by the image gradation creation part 11, and analyzes the histogram so as to create a color gradation curve for performing gradation correction. A color gradation conversion part 13 performs gradation conversion using the color gradation curve created by the color distribution analysis part 12 with respect to the gradation-created image created by the image gradation part 11 ...

METHOD OF PRODUCING CYCLIC POLYETHER

PROBLEM TO BE SOLVED: To provide a method for synthesizing a convergent cyclic polyether skeleton that is applicable to the synthesis of ciguatoxin and further applicable to cyclic compounds larger than six-membered rings. SOLUTION: An alkyl borane and a cyclic enol phosphate are crosscoupled in a basic aqueous solution by using a palladium (0) compound bearing phosphine ligands as a catalyst. COPYRIGHT: (C)2001,JPO ...

STRUCTURE OF AXLE CASE

PROBLEM TO BE SOLVED: To reduce stresses at a welded part of a cover and an interface part between a cover fixing surface and a cover body and restrict its deformation to improve durability when a forward or rearward bonding moment acts against an axle case. SOLUTION: In the axle case structure of a welded sheet assembly structure, a flange-like fixing surface arranged in an annular form along an outer circumference of a cover body composed of a substantial semi-sphere shape of a cover is provided with wide surfaces wider than other locations of fixing surface at right and left two locations. COPYRIGHT: (C)2010,JPO&INPIT ...

CONNECTOR

PROBLEM TO BE SOLVED: To solve a problem that, in jointing insulation films by applying them at a joint part of a frame formed of a metal material and a site except a contacting part and a terminal part of a contact, it is not only hard to secure a constant film thickness for securing electric insulation performance, but it is also hard to obtain accuracy of a film thickness, especially, it is hard to deform film thickness of the insulation films, in carrying out correction of warp and deformation of individual components by setting them on assembling jigs. SOLUTION: In the connector having insulation films applied on a frame (12), and/or contacts (31, 41) and jointing them both in an electrically insulated state, the insulation films (60) have spacer particles (61) blended. COPYRIGHT: (C)2012,JPO&INPIT ...

APPARATUS AND METHOD OF GENERATING COLOR CONVERSION COEFFICIENTS, STORING MEDIUM AND COLOR CONVERSION SYSTEM

PROBLEM TO BE SOLVED: To provide an apparatus and a method of generating color conversion coefficients, thereby reproducing a color with higher accuracy than in the prior art. SOLUTION: LUT1 and LUT2 formers 1, 2 form an LUT1 and LUT2 with linear outputs from first or second prime data. Using the LUT1 and LUT2, an LUT1 converter 3 and an LUT2 inverse converter 4 convert their outputs to four adjusted color values CMYK of the first prime data and adjusted color values C' M' Y' K' of the second prime data, an L-patched LUT former 5 generates an L-patched LUT so that values of K among the four color values are equal. A K-conserved 4DLUT former 6 forms a K-conserved 4DLUT form the four adjusted color values, the L-patched LUT and values Lab of the first and second prime data. A 4DLUT result unit 7 resets partial data in the formed K-conserved 4DLUT, thereby aiming at a partial colorimetric coincidence. COPYRIGHT: (C)2002,JPO ...

RUBBER COMPOSITION

PURPOSE:To make it possible to improve the roll adhesion and stickiness of the obtained rubber composition, by mixing a specified cyclopentadiene copolymer resin with a rubberlike polymer comprising ethylene and an alpha-olefin and/or a nonconjugated diene. CONSTITUTION:This rubber composition comprises 100pts.wt. rubberlike polymer [I] comprising ethylene and an alpha-olefin and/or a nonconjugated diene and 0.5-30pts.wt. cyclopentadiene copolymer resin [II] obtained by copolymerizing 100pts.wt. conjugated double bond-containing five-membered ring compound of formula I (wherein H is a hydrogen atom., R is a 1-3C alkyl group, m and n are each 0 or an integer >=1 and m+n=6) and/or its Diels-Alder adduct (component A) with 5-200pts.wt. unsaturated aromatic hydrocarbon component (component B) having both of a carbon-carbon double bond and a benzene ring in the molecule.

TRICYCLIC FLUOROCOMPOUND HAVING ETHER BOND

NEW MATERIAL:To ether bond-having tricyclic flower fluorocompound of formula I [R is 1-5C linear chain alkyl; (n) is 4-8; X is H, F, trans (equatorial equatorial) configurational cyclohexane ring]. USE: Useful as an electrooptical display material. Since having a low △n and a large △ε, the compound of formula I gives a mixed liquid crystal having a low △n, a high △ε and a low threshold value when mixed with a nematic mixed liquid crystal now generally employed as a matrix liquid crystal. Employed as a material for preparing TIV type liquid crystal display cells having an excellent visual characteristic and capable of being driven at low voltage. PREPARATION: A compound of formula III is allowed to react with magnesium powder and the prepared compound of formula IV is made to react with a compound of formula V. The compound of formula V is subjected to a dehydration reaction in the presence of an acidic catalyst and subsequently to a catalytic reduction to provide the compound of formula ...

PRECEDING DATA DETECTION ADDER CIRCUIT

PURPOSE: To reduce the quantity of hardware by providing an addition function and a preceding data detection function in one adder circuit. CONSTITUTION: The preceding data detection adder circuit consists of a selection circuit MUX1 selecting any of input signals B3-B0 or input signals C3-C0 by a control signal CNT, a selection circuit MUX2 selecting either a logic 1 or 0 for a carry signal of a most significant bit by the control signal CNT, and an adder circuit FADD whose carry terminal CRA in a most significant bit connects to the selection circuit MUX2 and whose carry terminal CRA in low- order bits and whose carry terminal CRB in high-order bits are connected respectively. Then the adder circuit FADD receives the input signals A3-A0 and an output signal of the selection MUX1 and adds them and outputs the result of addition of bits as SUM3-SUM0 and is provided with a calculation function and a function of switching preceding data detection function and switching the propagation direction ...

Komplementäres MOS-Halbleiterbauelement

Schalteinrichtung

Schalteinrichtung mit folgenden Merkmalen: seitlich verschiebbare Schieber (14, 15, 16); Hebel (61), welche unterhalb der Schieber (14, 15, 16) mittels Kippabstützungen (65) kippbar abgestützt und mit den Schiebern (14, 15, 16) zusammenwirkend kippbar sind; und bewegbare Kontakte (52, 53), welche durch den Kippvorgang der Hebel (61) kippbar sind, so daß sie von festen Kontakten (59a, 59b, 60a, 60b) trennbar bzw. an diese festen Kontakte (59a, 59b, 60a, 60b) anlegbar sind, dadurch gekennzeichnet, daß ein Paar von Angriffsbereichen (E) der Hebel (61), auf welche durch die Schieber (14, 15, 16) Kippkräfte aufgebracht werden, niedriger als die Kippabstützungen (65) angeordnet sind.

Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung

FINGERABDRUCKLESEGERÄT

OPTISCH AKTIVE BENZOESAEUREESTERDERIVATE.

FINGERPRINT READER

GLYCOSYLTRANSFERASE FOR THE TREATMENT OF INFLAMMATORY INTESTINE DISEASES

Print media for water-based color ink jet printing and method for manufacturing same

A print media for water-based ink comprising a base, and an ink reception layer with a surface not facing the base to be used as the printing surface provided on one side of the base, wherein the ink reception layer includes; a hydrophilic first resin and a second resin having a thermal adhesive property a micro-phase separation structure in the printing surface, which is formed by the first resin and the second resin; and the second resin contains an acrylic polymer with a quaternized amino group.

INK COMPOSITIONS FOR WATERLESS PLATES

LOW PROFILE TRANSFER ARTICLE

A Low-Profile Transfer Article A low-profile transfer article having an adhesive layer, a coating of particles on one surface of the adhesive layer, and a graphic image formed of one or more layers of ink adherably bonded to the ink-receptive surface of the particles, the transfer article being free of a permanent self-supporting film support layer.

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate (10) formed of silicon carbide and a SiC substrate (20) formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate (10) and the SiC substrate (20) to have their main surfaces (10A, 20B) in contact with each other; heating the stacked substrate to join the base substrate (10) and the SiC substrate (20) and thereby fabricating a joined substrate (3); and heating the joined substrate (3) such that a temperature difference is formed between the base substrate (10) and the SiC substrate (2), and thereby discharging voids (30) formed at the step of fabricating the joined substrate (3) at an interface (15) between the base substrate (10) and the SiC substrate (20) to the outside.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

A combined substrate is prepared which has a supporting portion (30) and first and second silicon carbide substrates (11, 12) The first silicon carbide substrate (11) has a first front-side surface and a first side surface (S1) The second silicon carbide substrate has a second front-side surface and a second side surface (S2) The second side surface (S2) is disposed such that a gap having an opening between the first and second front-side surfaces (F1, F2) is formed between the first side surface (S1) and the second side surface (S2) By introducing melted silicon from the opening into the gap, a silicon connecting portion (BDp) is formed to connect the first and second side surfaces (S1, S2) so as to close the opening By carbonizing the silicon connecting portion (BDp), a silicon carbide connecting portion (BDa) is formed ...

DECORATIVE FILM FOR A RUBBER ARTICLE

A decorative film which is capable of being fused to an ethylene-propylene diene monomer. The film comprises a substrate formed from an ethylene/acrylic acid copolymer or an ethylene/ethyl acrylate copolymer and a synthetic resin elastomer film decoratable layer which is bonded to the substrate by an adhesive.

CDMA RECEIVER PHASE TRACKING SYSTEM

Despreading means 10 despreads a pilot signal included in a first received signal 1. Of the pilot signal despread by the despreading means 10, strength determination means 15 determines the strength of the received pilot signal. Integration control means 16 determines the integration interval used by integration means 13, from the strength of the received pilot signal determined by the strength determination means 15. The differences in strength detected by strength difference detection means 12 are added together by the integration means 13 over the period of time decided by the integration control means 16. The integration time used by the integration means 13 is made changeable according to the receiving environment. Accordingly, when there is the superior receiving environment, there is reduced the load imposed on the integration means 13 when the integration means 13 performs the processing operations. Therefore, there can be realized a superior CDMA receiver phase tracking system ...

IMAGE READER FOR PERSONAL CERTIFICATION CAPABLE OF DISPLAYING IMAGE WITH EXCELLENT RESOLUTION

PURPOSE: An image reader for personal certification is provided to excellently read an image of an object, and enable a personal certification system using the image reader to excellently perform the personal certification and display the image of an excellent resolution. CONSTITUTION: An image display(210) has an image display section(ARi) and emits a display light according to brightness. A sensing surface(DTC) places the object by covering/layering entire area of the image display section. The first section(ARf) places the object. The second section(ARd) comprises the section corresponding to partial display section except the first section. Photo-sensors(100) arranged in a matrix shape have transparency by installing to the first and the second section, partially pass the display light emitted from the image display section, and read the image of the object on the first section. © KIPO 2005 ...

ELECTROPHORETIC DISPLAY APPARATUS, CAPABLE OF SUPPRESSING LOWERING OF A CONTRAST RATIO

PURPOSE: An electrophoretic display apparatus is provided to prevent a contrast ratio from being lowered due to coexistence of a color and an opposite color between pixels. CONSTITUTION: The first and second substrates face each other. A plurality of pixel electrodes is arranged on the first substrate. A wire is arranged between adjacent pixel electrodes. A channel protection film(32) made from a nitric silicon is installed on a central part on a semiconductor thin film. COPYRIGHT KIPO 2011 ...

OUTSIDE AIR INTRODUCING DEVICE FOR AIR CONDITIONER OF CONSTRUCTION MACHINE

PURPOSE: To provide reasonably provided outside air introducing equipment for an air conditioner for a construction machine by employing the exterior rear of cub having no installation space for equipment in terms of their structure. CONSTITUTION: An outside air inlet 12 part is provided at the exterior rear 3 of a cab extended to surround an engine part side along the outside surface of the cab 1 in a construction machine. A duct 11 formed in the exterior rear 3 of the cab from the outside air inlet 12 part is connected through a chamber 17 provided in the interior of the cab to the outside air introducing part 21 of an air conditioner installed in the cab. © KIPO & JPO 2002 ...

Method for manufacturing a semiconductor substrate

In the provided method for manufacturing a semiconductor substrate, a composite substrate (80P) that has a support section (30) and first and second silicon carbide substrates (11, 12) is prepared. There is a gap (GP) with an opening (CR) between the first and second silicon carbide substrates (11, 12). A plug layer for the gap (GP) is formed above the opening (CR). The plug layer includes at a silicon layer, at least. The silicon layer is carbonized to form a lid (70) comprising silicon carbide that plugs the gap (GP) above the opening (CR). Depositing a sublimate from respective first and second lateral surfaces (S1, S2) of the first and second silicon carbide substrates (11, 12) onto the lid (70) forms a joining part that plugs up the opening (CR). The lid (70) is then removed.

Photosensor system and image reading method

A photosensor system includes a photosensor array which is constituted by two-dimensionally arraying a plurality of photosensors and has a light-receiving surface, and a front light source which is arranged to face the light-receiving surface at an interval, and illuminates a rear surface of an object whose front surface is set on the light-receiving surface. An image reading assembly reads an object image by receiving light that is emitted by the front light source and passes through the object.

Semiconductor substrate

Communication terminal and warning information obtaining method

A communication terminal includes: a first receiving unit configured to receive a communication signal in a first communication system; a second receiving unit configured to receive a communication signal in a second communication system; a position information obtaining unit configured to obtain position information of a user; a mode determination unit configured to activate the second receiving unit if the position information obtaining unit obtains position information of the user in a case where the first receiving unit cannot receive a communication signal; and a user interface unit configured to provide the user with warning information extracted from the communication signal received by the second receiving unit.

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A silicon carbide substrate includes a base layer made of silicon carbide, an SiC layer made of single crystal silicon carbide, arranged on the base layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer, and a cover layer made of silicon carbide, formed on a main surface of the base layer at a side opposite to the SiC layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer.

Ingot, silicon carbide substrate, and method for producing ingot

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 5×1017 atoms/cm4 or less.

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

METHOD FOR PRODUCING POLYCARBONATE RESIN

PROBLEM TO BE SOLVED: To provide a method for continuously producing a polycarbonate resin obtained by a melting method and being excellent in hue in high productivity with a high yield by suppressing occurrence of a highly discolored product after a start of production. SOLUTION: The method for producing the polycarbonate resin comprises continuously producing the polycarbonate resin by carrying out melt polymerization of a carbonic acid diester with a divalent dihydroxy compound in the presence of a transesterification catalyst. In the production method, a reaction liquid of a reacting tank is pulled out after stopping melt polymerization reaction and one or more kinds of compounds selected from the same monohydroxy compound as compound produced as a by-product in the course of the reaction within 24 hr, a carbonic acid diester used as a raw material and a raw material mixed liquid are fed as a washing liquid and the resin remaining in the reacting tank and piping connecting the reacting ...

PRODUCTION OF AROMATIC-ALIPHATIC COPOLYCARBONATE

PROBLEM TO BE SOLVED: To obtain an aromatic-aliphatic copolycarbonate having excellent impact and heat resistances, a high Abbe number and a low photoelastic constant, excellent in color tone and useful as an optical material or the like by adopting a specific transesterification condition. SOLUTION: When performing the transesterification of (A) an aromatic dihydroxy compound (preferably bisphenol A) of formula I [wherein, X a single bond, a group expressed by formula II (wherein, R3 and R4 are each H, a 1-12C alkyl or phenyl) or the like; R1 and R2 are each H, a 1-10C alkyl, a cycloalkyl or the like; (m) and (n) are the number of substituents and are each 0-4] with both (B) a tricyclo(5.2.1.02.6)decanedimethanol of formula II and (C) a carbonic diester (preferably diphenyl carbonate or the like), the aldehyde content in the component B is ≤0.5 mg/(1 g component B) in terms of KOH. COPYRIGHT: (C)2000,JPO ...

ETHER THRESHOLD VALUE VOLTAGE-LOWERING AGENT

NEW MATERIAL:A compound of formula I [R is linear chain 1-5C alkyl; the cyclohexane ring has a trans (equatorial-equatorial) configuration; X is F or H]. EXAMPLE: A compound of formula VIII. USE: A threshold value voltage-lowering agent useful as a material for preparing liquid crystal display cells responding at high speeds and driven at low voltage, capable of lowering the viscosity of mixed liquid crystals and of effectively dropping the threshold value voltage and having excellent solubility in general mixed liquid crystals. PREPARATION: A compound of formula II is reacted with methoxymethyl triphenyl phosphonium chloride and the resultant compound of formula III is treated with hydrochloric acid to prepare a compound of formula IV. The compound of formula IV is reacted with the above-mentioned chloride and the resultant compound of formula V is treated with hydrochloric acid to produce the compound of formula VI. The compound of formula VI is reacted with the avove-mentioned chloride ...

ABSORBENT

PURPOSE: To provide a soft absorbent having a fast ulcer-absorbing performance by molding one part of a resin in grooves formed on the surface of a fiber substrate to form fine fibrous resin moldings when an acrylic acid monomer for highly absorbable resins is coated on the fiber web and subsequently polymerized. CONSTITUTION: An aqueous solution of an acrylic acid monomer for highly absorbable resin, e.g., acrylic acid or a mixture of the acrylic acid and methacrylic acid, especially a treating solution prepared by mixing the solution of a monomer having carboxylic acid groups neutralized with an alkali metal, etc., in a neutralization degree of 20-90% based on the total carboxyl groups with a crosslinkable monomer having two or more double bonds copolymerizable with monomer in the molecule, is coated on a fiber web preferably comprising polyester fibers having modified cross-sections and subsequently polymerized. The treated web is irradiated with electron beams and/or UV light to polymerize ...

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. 1. A method of manufacturing a semiconductor substrate , comprising the steps of:preparing a plurality of silicon carbide substrates having first and second silicon carbide substrates and a support portion, said first silicon carbide substrate having a first back surface facing said support portion and located on one plane, a first front surface opposed to said first back surface, and a first side surface connecting said first back surface and said first front surface to each other, said second silicon carbide substrate having a second back surface facing said support portion and located on said one plane, a second front surface opposed to said second back surface, and a second side surface connecting said second back surface and said second front surface to each other, said second side surface being arranged such that a gap having an opening between said first and second front surfaces is formed between said second side surface and said first side surface; andheating said support portion and said first and second silicon carbide substrates for generating a sublimate from said first ...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. 1. A method for manufacturing a semiconductor substrate , comprising the steps of:preparing a combined substrate having a supporting portion and first and second silicon carbide substrates, said first silicon carbide substrate having a first backside surface connected to said supporting portion, a first front-side surface opposite to said first backside surface, and a first side surface connecting said first backside surface and said first front-side surface, said second silicon carbide substrate having a second backside surface connected to said supporting portion, a second front-side surface opposite to said second backside surface, and a second side surface connecting said second backside surface and said second front-side surface, said second side surface being disposed such that a gap having an opening between said first and second front-side surfaces is formed between said first side surface and said second side surface;forming a silicon connecting portion for connecting said first and second side surfaces so as to close said opening by introducing melted silicon from said opening to said gap; andforming a silicon carbide connecting portion for connecting said first and second side surfaces so as to close said ...

METHOD OF MANUFACTURING SINGLE CRYSTAL

A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film. 1. A method of manufacturing a single crystal , comprising the steps of:preparing a seed crystal having a frontside surface and a backside surface;increasing surface roughness of said backside surface of said seed crystal;forming a coating film including carbon on said backside surface of said seed crystal after said step of increasing the surface roughness of said backside surface;bringing said coating film and a pedestal into contact with each other with an adhesive interposed therebetween;curing said adhesive to fix said seed crystal to said pedestal; andgrowing the single crystal on said seed crystal fixed to said pedestal,wherein a carbon film is formed by carbonizing said coating film, prior to said step of growing.2. The method of manufacturing the single crystal according to claim 1 , wherein said step of increasing the surface roughness of said backside surface is performed by treating said backside surface using abrasive grains.3. The method of manufacturing the single crystal according to claim 2 , wherein grain size distribution of said abrasive grains has a component of not less than 16 μm.4. The method of manufacturing the single crystal according to claim 1 , wherein said coating film is an organic film claim 1 , and said carbon film is formed by carbonizing said organic film.5. The method of manufacturing the single crystal according to claim 4 , wherein said organic film is formed of an organic resin.6. ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing at least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, said preparing step including the step of forming at least one of said backside surface and said main surface by machining, and a surface layer having distortion in a crystal structure being formed on at least one of said backside surface and said main surface by said forming step, said method further comprising the steps of:removing said surface layer at least partially, andconnecting said backside surface and said main surface to each other, after said removing step.2. The method for manufacturing a silicon carbide substrate according to claim 1 , wherein said removing step is carried out by sublimation of said surface layer.3. The method for manufacturing a silicon carbide substrate according to claim 2 , whereinsaid surface layer is formed at said backside surface in said preparing step,said surface layer formed at said backside surface is removed at least partially in said removing step.4. The method for manufacturing a silicon carbide substrate according to claim 3 , wherein said removing step includes the step of arranging said backside surface and said main surface to face each other prior to said sublimation step.5. ...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. 1: A method for manufacturing a semiconductor substrate , comprising the steps of:preparing a combined substrate having a supporting portion, a first silicon carbide substrate having a single-crystal structure, and a second silicon carbide substrate having a single-crystal structure, said first silicon carbide substrate having a first backside surface connected to said supporting portion, a first front-side surface opposite to said first backside surface, and a first side surface connecting said first backside surface and said first front-side surface, said second silicon carbide substrate having a second backside surface connected to said supporting portion, a second front-side surface opposite to said second backside surface, and a second side surface connecting said second backside surface and said second front-side surface, said second side surface being disposed such that a gap having an opening between said first and second front-side surfaces is formed between said first side surface and said second side surface;forming a closing layer for closing said gap over said opening, said closing layer including at least a silicon layer;carbonizing said silicon layer to form a cover made of silicon carbide and closing said gap over said opening;forming a connecting portion for connecting said first and second side surfaces so as to close said ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A supporting portion () made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion () and at least one single crystal substrate () made of silicon carbide are stacked such that the backside surface (B) of each at least one single crystal substrate () and the main surface (FO) of the supporting portion () having irregularities formed contact each other. In order to connect the backside surface (B) of each at least one single crystal substrate () to the supporting portion (), the supporting portion () and at least one single crystal substrate () are heated such that the temperature of the supporting portion () exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate () is below the temperature of the supporting portion (). 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a plurality of single crystal substrates, each having a backside surface and made of silicon carbide;preparing a supporting portion having a main surface and made of silicon carbide, at least a portion of said main surface of said supporting portion having irregularities;stacking said supporting portion and said plurality of single crystal substrates such that said backside surface of each of said plurality of single crystal substrates and said main surface of said supporting portion having said irregularities formed contact each other; andheating said supporting portion and said plurality of single crystal substrates such that a temperature of said supporting portion exceeds a sublimation temperature of silicon carbide, and a temperature of each of said plurality of single crystal substrates is below a temperature of said supporting portion in order to connect said backside surface of each of said plurality of single crystal substrates to said supporting portion.2. The method for manufacturing a silicon carbide substrate according to claim ...

ELECTROPHORETIC DISPLAY DEVICE

An electrophoretic display device includes: a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval; a plurality of pixel electrodes which are aligned on the first substrate; a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes; an opposite electrode which is provided on the second substrate; a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; and a solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed. The partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides. 1. An electrophoretic display device comprising:a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval;a plurality of pixel electrodes which are aligned on the first substrate;a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes;an opposite electrode which is provided on the second substrate;a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; anda solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed;wherein the partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides.2. The electrophoretic display device according to claim 1 , wherein the expanded-width portion is formed in an approximately middle of the at least one of the four sides.3. The electrophoretic display device according to claim 1 , whereinthe expanded-width portion orthogonally crosses the at ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide;forming a Si film made of silicon on and in contact with a main surface of said base substrate;fabricating a stacked substrate by placing said SiC substrate on and in contact with said Si film; andconnecting said base substrate and said SiC substrate to each other by heating said stacked substrate to convert, into silicon carbide, at least a region making contact with said base substrate and a region making contact with said SiC substrate in said Si film.2. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of smoothing at least one of main surfaces of said base substrate and said SiC substrate claim 1 , which are to be disposed face to face with each other with said Si film interposed therebetween in the step of fabricating said stacked substrate claim 1 , the step of smoothing being performed before the step of fabricating said stacked substrate.3. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein said Si film formed in the step of forming said Si film has a thickness of not less than 10 nm and not more than 1 μm.4. The method for manufacturing the silicon carbide ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

A method for manufacturing a silicon carbide substrate () having a large diameter provided readily includes the steps of: preparing a plurality of SiC substrates () each made of single-crystal silicon carbide; and connecting end surfaces (B) of the plurality of SiC substrates () to one another such that the plurality of SiC substrates () are arranged side by side when viewed in a planar view. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a plurality of SiC substrates each made of single-crystal silicon carbide; andconnecting end surfaces of said plurality of SiC substrates to one another such that said plurality of SiC substrates are arranged side by side when viewed in a planar view.2. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of forming a filling portion for filling a gap between said plurality of SiC substrates.3. The method for manufacturing the silicon carbide substrate according to claim 2 , wherein in the step of forming said filling portion claim 2 , said filling portion formed has an impurity concentration greater than 5×10cm.4. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of smoothing main surfaces of said plurality of SiC substrates after the step of connecting said end surfaces of said plurality of SiC substrates to one another.5. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of forming an epitaxial growth layer made of single-crystal silicon carbide on main surfaces of said plurality of SiC substrates having said end surfaces connected to one another.6. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein each of said end surfaces of said plurality of SiC substrates prepared in the step of preparing said plurality of SiC substrates corresponds to a cleavage plane.7. The method ...

SEMICONDUCTOR DEVICE

A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10cm, and the SiC layer has an impurity concentration greater than 5×10cmand smaller than 2×10cm. 1. A semiconductor device comprising:a silicon carbide substrate;an active layer made of single-crystal silicon carbide and disposed on one main surface of said silicon carbide substrate;a first electrode disposed on said active layer; anda second electrode formed on the other main surface of said silicon carbide substrate, a base layer made of silicon carbide, and', 'a SiC layer made of single-crystal silicon carbide and disposed on said base layer,, 'said silicon carbide substrate including'}{'sup': 19', '−3, 'said base layer having an impurity concentration greater than 2×10cm ,'}{'sup': 18', '−3', '19', '−3, 'said SiC layer having an impurity concentration greater than 5×10cmand smaller than 2×10cm,'}between said base layer and said SiC layer, there being a boundary in which a defect density is discontinuous.2. The semiconductor device according to claim 1 , wherein said active layer includes:a drift layer having a first conductivity type, disposed on/over said silicon carbide substrate, and made of single-crystal silicon carbide,a well region having a second conductivity type and disposed to include a first main surface of said drift layer opposite ...

Semiconductor device

A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer.

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a plurality of SiC substrates each made of single-crystal silicon carbide;forming a base layer made of silicon carbide and holding said plurality of SiC substrates, which are arranged side by side when viewed in a planar view; andforming a filling portion filling a gap between said plurality of SiC substrates.2. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of smoothing main surfaces of said plurality of SiC substrates opposite to said base layer after the step of forming said filling portion.3. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of forming an epitaxial growth layer made of single-crystal silicon carbide on main surfaces of said plurality of SiC substrates opposite to said base layer.4. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein each of said plurality of SiC substrates prepared in the step of preparing said plurality of SiC substrates has an end surface corresponding to a cleavage plane thereof.5. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein each of said plurality of SiC substrates prepared in the step of preparing said plurality of SiC substrates has an end surface corresponding to a {0001} plane.6. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein in the step of forming said base layer claim 1 , each of said SiC ...

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

SILICON CARBIDE SUBSTRATE

A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular surface to each other. The first notch portion and the second notch portion are opposite to each other. The side surface has a first depression connecting the first notch portion and the second notch portion to each other. 1. A silicon carbide substrate having a single-crystal structure , comprising:a first circular surface provided with a first notch portion;a second circular surface opposite to said first circular surface and provided with a second notch portion; anda side surface connecting said first and second circular surfaces to each other, said first and second notch portions being opposite to each other, said side surface having a first depression connecting said first and second notch portions to each other.2. The silicon carbide substrate according to claim 1 , wherein the silicon carbide substrate has asymmetry for given turnover of the silicon carbide substrate.3. The silicon carbide substrate according to claim 2 , wherein:said first circular surface includes a third notch portion having a shape different from that of said first notch portion,said second circular surface includes a fourth notch portion having a shape different from that of said second notch portion, said third and fourth notch portions being opposite to each other, andsaid side surface has a second depression connecting said third and fourth notch portions to each other.4. The silicon carbide substrate according to claim 2 , wherein said first depression has asymmetry for said turnover.5. The silicon carbide substrate according to claim 2 , wherein shapes of said first and second notch portions are different from each other.6. The silicon carbide substrate according to claim 2 , wherein shapes ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide;fabricating a stacked substrate by stacking said base substrate and said SiC substrate such that main surfaces of said base substrate and said SiC substrate are in contact with each other;fabricating a connected substrate by heating said stacked substrate to connect said base substrate and said SiC substrate to each other;transferring a void in a thickness direction of said connected substrate by heating said connected substrate to form a temperature difference between said base substrate and said SiC substrate, said void being formed at an interface between said base substrate and said SiC substrate in the step of fabricating said connected substrate; andremoving said void by removing a region including a main surface of one substrate of said base substrate and said SiC substrate, said one substrate being heated to have a higher temperature in the step of transferring said void, said main surface of said one substrate being opposite to the other substrate of said base substrate and said SiC substrate.2. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein:in the step of ...

SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first SiC crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained. 1. A silicon carbide crystal , having concentration of iron not lower than 0.002 ppm and not higher than 0.1 ppm and concentration of aluminum not lower than 0.02 ppm and not higher than 100 ppm , and having micropipe density not higher than 2/cm.2. (canceled)3. The silicon carbide crystal according to claim 1 , having etch pit density not lower than 4100/cmand not higher than 5200/cm.4. A method of manufacturing a silicon carbide crystal claim 1 , comprising the steps of:preparing powders of silicon carbide for polishing as a first source material;growing a first silicon carbide crystal by sublimating said first source material through heating and precipitating a silicon carbide crystal;forming a second source material by crushing said first silicon carbide crystal; andgrowing a second silicon carbide crystal by sublimating said second source material through heating and precipitating a silicon carbide crystal,in said step of forming a second source material, said second source material is formed such that a plurality of peaks of size distribution are present in a range not smaller than 1 μm and not greater than 3 mm and 95% or more particles are present in a range of ±50% from a center of each peak of said size distribution.5. (canceled)6. The method of manufacturing a silicon carbide ...

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently. 1. A method for manufacturing a silicon carbide substrate , comprising the steps of: 'the step of preparing said stack being performed to position each single-crystal substrate in said first single-crystal substrate group and said first base substrate face to face with each other, position each single-crystal substrate in said second single-crystal substrate group and said second base substrate face to face with each other, and stack said first single-crystal substrate group, said first base substrate, said insertion portion, said second single-crystal substrate group, and said second base substrate in one direction in this order; and', 'preparing a stack including first and second single-crystal substrate groups each made of silicon carbide, first and second base substrates each made of silicon carbide, and an insertion portion made of a material having solid state at a sublimation temperature of silicon carbide,'}heating said stack so as to allow a temperature of said stack to reach a temperature at which silicon carbide is able to sublime and so as to form a temperature gradient in said stack with the temperature ...

COLOR PROCESSING APPARATUS, COLOR PROCESSING METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

A color processing apparatus includes a first calculation unit, a determination unit, and a second calculation unit. The first calculation unit calculates a second color signal from a first color signal by using successive approximation. The first color signal is given by repeatedly calculating a first successive solution using an inverse matrix of a sensitivity matrix of an input/output characteristic function of an output device. The determination unit determines whether or not the first successive solution calculated by the first calculation unit is divergent. The second calculation unit calculates a second successive solution using a method different from a method used by the first calculation unit when the determination unit determines that the first successive solution is divergent. 1. A color processing apparatus comprising:a first calculation unit that calculates a second color signal from a first color signal by using successive approximation, the first color signal being given by repeatedly calculating a first successive solution using an inverse matrix of a sensitivity matrix of an input/output characteristic function of an output device;a determination unit that determines whether or not the first successive solution calculated by the first calculation unit is divergent; anda second calculation unit that calculates a second successive solution using a method different from a method used by the first calculation unit when the determination unit determines that the first successive solution is divergent.2. The color processing apparatus according to claim 1 , wherein the second calculation unit includes a linear equation generation unit that generates a plurality of linear equations with changing unknown numbers to be fixed claim 1 , each of the plurality of linear equations being a linear equation in which at least one unknown number in a linear equation using the sensitivity matrix is set to a fixed value claim 1 , a minimization operation unit that ...

SILICON CARBIDE SUBSTRATE

A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane. 1. A silicon carbide substrate comprising:a base substrate having a diameter of 70 mm or greater; anda plurality of SiC substrates each made of single-crystal silicon carbide and arranged side by side on said base substrate when viewed in a planar view,each of said SiC substrates having a main surface that is opposite to said base substrate and that has an off angle of 20° or smaller relative to a {0001} plane.2. The silicon carbide substrate according to claim 1 , wherein said base substrate and each of said SiC substrates are in contact with each other.3. The silicon carbide substrate according to claim 1 , wherein said base substrate is made of silicon carbide.4. The silicon carbide substrate according to claim 3 , wherein crystal is discontinuous between said base substrate and each of said SiC substrates.5. The silicon carbide substrate according to claim 4 , wherein defects are discontinuous between said base substrate and each of said SiC substrates.6. The silicon carbide substrate according to claim 1 , wherein said base substrate has a diameter of 4 inch or greater.7. The silicon carbide substrate according to claim 1 , wherein said main surface of each of said SiC substrates opposite to said base substrate has an off angle of 5° or greater relative to a {0001} plane. 1. Field of the InventionThe present invention relates to a silicon carbide substrate, more particularly, a silicon carbide substrate allowing for reduced cost of ...

COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed. 1. A composite substrate , comprising:a base portion;a first single-crystal silicon carbide substrate provided on said base portion and having a first side extending from a first vertex having a first angle in planar view;a second single-crystal silicon carbide substrate provided on said base portion and having a second side extending from a second vertex having a second angle, a sum of said first angle and said second angle being 180° in planar view; and{'b': 3', '4, 'a third single-crystal silicon carbide substrate provided on said base portion and having a third side connecting third and fourth vertices (P, P) to each other in planar view,'}said first vertex and said second vertex abutting each other such that said first side and said second side are aligned, at least a part of said first side abutting on said third side, and at least a part of said second side abutting on said third side, anda portion of said base portion facing each of said first to third single-crystal silicon carbide substrates being a portion epitaxially grown on said first to third single-crystal silicon carbide substrates.2. The composite substrate according to claim 1 , whereina gap is provided among said first to third single-crystal silicon carbide substrates, andsaid composite substrate further comprises a closing portion closing ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE

Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces. 1. A method for manufacturing a silicon carbide single crystal , comprising the steps of:preparing a seed substrate having a supporting portion and first and second material substrates made of silicon carbide having a single-crystal structure, said first material substrate having a first back surface connected to said supporting portion, a first front surface opposite to said first back surface, and a first side surface connecting said first back surface and said first front surface, said second material substrate having a second back surface connected to said supporting portion, a second front surface opposite to said second back surface, and a second side surface connecting said second back surface and said second front surface, said first and second material substrates being arranged such that said first and second side surfaces face each other with a gap interposed therebetween, said gap having an opening between said first and second front surfaces;forming a closing portion for closing said gap over said opening;providing a connecting portion for closing said opening to said seed substrate by depositing a sublimate of silicon carbide from said first and second side surfaces onto said closing portion;removing said closing ...

METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE

A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed. 1. A method for manufacturing a combined substrate , comprising the steps of:preparing a connected substrate having a supporting portion and first and second silicon carbide substrates, said first silicon carbide substrate having a first backside surface connected to said supporting portion, a first front-side surface opposite to said first backside surface, and a first side surface connecting said first backside surface and said first front-side surface to each other, said second silicon carbide substrate having a second backside surface connected to said supporting portion, a second front-side surface opposite to said second backside surface, and a second side surface connecting said second backside surface and said second front-side surface to each other and forming a gap between said first side surface and said second side surface;forming a filling portion for filling said gap;polishing said first and second front-side surfaces after the step of forming said filling portion;removing said filling portion after the step of polishing; andforming a closing portion for closing said gap after the step of ...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT

A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet is formed on a surface of the grown silicon carbide layer at an end portion on an upstream side, the upstream side being a side where an angle of intersection between a <0001> direction axis of the base substrate and the surface of the base substrate in the off angle direction is an acute angle. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a region having a (0001) facet being formed on a surface of grown said silicon carbide layer at an end portion on an upstream side, the upstream side being a side where an angle of intersection between a <0001> direction axis of said base substrate and said surface of said base substrate in said off angle direction is an acute angle.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereinin said silicon carbide layer after said step of growing a silicon carbide layer, a portion located below said region having said (0001) facet is a high concentration nitrogen region having a nitrogen concentration higher than in a portion other than said portion located below said region having said (0001) facet in said silicon carbide ...

Silicon carbide powder and method for producing silicon carbide powder

There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT

A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm, a metal atom concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×10atoms/(cm·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot. 1. A silicon carbide crystal ingot having a surface greater than or equal to 4 inches in diameter , comprising:an n-type dopant, anda metal atom having an atomic radius larger than the atomic radius of silicon, wherein{'sup': 15', '3', '20', '3, 'said n-type dopant has a concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm,'}{'sup': 14', '3', '18', '3, 'said metal atom has a concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm, and not exceeding the concentration of said n-type dopant, and'}{'sup': 17', '3, 'said metal atom has a concentration gradient less than or equal to 1×10atoms/(cm·mm).'}2. A silicon carbide crystal wafer having a surface greater than or equal to 4 inches in diameter claim 1 , obtained by being cut out from the silicon carbide crystal ingot defined in .3. The silicon carbide crystal wafer according to claim 2 , wherein an off angle of said silicon carbide crystal wafer is greater than or equal to 1° to a surface of seed crystal.4. The silicon carbide crystal wafer according to claim 2 , wherein a difference between a maximum value and minimum value of an angle between said surface of said silicon carbide crystal wafer and a normal line of a low-index plane substantially parallel to said surface of said silicon carbide crystal wafer is less than or equal to 0.5°.5. The silicon carbide crystal wafer according to claim 4 ...

SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10/cm, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed. 1. A single crystal silicon carbide substrate having a 4H-polytype crystal structure , and having a main surface encompassing a circle having a diameter of 5 cm , comprising{'sup': 16', '3, 'nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10/cm,'}said single crystal silicon carbide substrate including only one of a facet region and a non-facet region.2. The single crystal silicon carbide substrate according to claim 1 , whereina ratio of maximum value to minimum value of said atomic concentration in said main surface is set to less than 1.5.3. The single crystal silicon carbide substrate according to claim 1 , whereina ratio of maximum value to minimum value of dislocation density per unit area in said main surface is set to less than 5.4. The single crystal silicon carbide substrate according to claim 1 , including only the facet region.5. The single crystal silicon carbide substrate according to claim 1 , whereinsaid main surface has a circular shape.6. A method of manufacturing a single crystal silicon carbide substrate claim 1 , comprising the steps of:{'sup': 16', '3, 'preparing a silicon carbide single crystal having a 4H-polytype single crystal structure, and doped with nitrogen atoms as a conduction impurity with an atomic concentration of more than 1×10/cm;'}grinding said silicon carbide single crystal to remove at least a part of said silicon carbide single crystal; andafter said step of grinding said silicon carbide single crystal, cutting a ...

WHITE ADJUSTING DEVICE, WHITE ADJUSTING METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

Provided is a white adjusting device including an estimation unit that estimates a color temperature from an image to be processed, an acquisition unit that acquires a representative color value from a region close to white which is a region in which a color in a color range predetermined from a preset white color value of the image exists, a calculation unit that calculates a correction representative color value from a color value corresponding to the color temperature estimated in the estimation unit and the representative color value acquired in the acquisition unit, and a conversion unit that converts a color of the image so that the correction representative color value is set to the white color value. 1. A white adjusting device comprising:an estimation unit that estimates a color temperature from an image to be processed;an acquisition unit that acquires a representative color value from a region close to white which is a region in which a color in a color range predetermined from a preset white color value of the image exists;a calculation unit that calculates a correction representative color value from a color value corresponding to the color temperature estimated in the estimation unit and the representative color value acquired in the acquisition unit; anda conversion unit that converts a color of the image so that the correction representative color value is set to the white color value.2. The white adjusting device according to claim 1 , wherein the calculation unit calculates the correction representative color value by weighting based on the color temperature estimated in the estimation unit.3. The white adjusting device according to claim 1 , wherein the acquisition unit acquires the representative color value by performing weighting based on a color difference from the white color value.4. The white adjusting device according to claim 2 , wherein the acquisition unit acquires the representative color value by performing weighting based on a color ...

METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL

A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide crystal by oxidizing carbon. According to the manufacturing method, by gasifying the base integrated with the silicon carbide crystal by oxidizing carbon forming the base, the base is removed from the silicon carbide crystal. Therefore, since it is not necessary to apply physical force to the silicon carbide crystal or the base for separating them from each other, occurrence of a defect involved with removal of the base can be suppressed. Therefore, high-quality silicon carbide crystal having fewer defects can be manufactured. 1. A method of manufacturing silicon carbide crystal , comprising the steps of:forming silicon carbide crystal on a main surface of a base composed of carbon; andremoving said base from said silicon carbide crystal by oxidizing said carbon.2. The method of manufacturing silicon carbide crystal according to claim 1 , comprising the step of arranging a seed substrate composed of silicon carbide single crystal on the main surface of said base before said step of forming silicon carbide crystal.3. The method of manufacturing silicon carbide crystal according to claim 2 , whereinin said step of arranging a seed crystal, said seed substrate is fixed to the main surface of said base by using a fixing portion composed of carbon.4. The method of manufacturing silicon carbide crystal according to claim 1 , whereinin said step of removing said base, said base is heated to a temperature not lower than 500° C. and lower than 1800° C.5. The method of manufacturing silicon carbide crystal according to claim 1 , whereinin said step of removing said base, said base is arranged in an atmosphere containing oxygen by not less than 1 volume %.6. The method of manufacturing silicon carbide crystal according to claim 1 , further comprising the step of partially removing said ...

IMAGE PROCESSING APPARATUS, NON-TRANSITORY COMPUTER READABLE MEDIUM AND IMAGE PROCESSING METHOD

Provided is an image processing apparatus including a generation unit that generates an image with a resolution output to a first output device, a first correction unit that performs a spatial frequency correction for an output from the first output device on the image generated by the generation unit, a resolution conversion unit that converts a resolution of the image generated by the generation unit into a resolution of a second output device, and a second correction unit that performs a spatial frequency correction on an image converted by the resolution conversion unit so that a result of the spatial frequency correction performed in the first correction unit is visually obtained when an output from the second output device is performed. 1. An image processing apparatus comprising:a generation unit that generates an image with a resolution output to a first output device;a first correction unit that performs a spatial frequency correction for an output from the first output device on the image generated by the generation unit;a resolution conversion unit that converts a resolution of the image generated by the generation unit into a resolution of a second output device; anda second correction unit that performs a spatial frequency correction on an image converted by the resolution conversion unit so that a result of the spatial frequency correction performed in the first correction unit is visually obtained when an output from the second output device is performed.2. The image processing apparatus according to claim 1 , further comprising:a retention unit that retains a plurality of spatial frequency correction coefficients,wherein the second correction unit acquires a spatial frequency correction coefficient based on the resolution of the second output device from the retention unit to perform a spatial frequency correction.3. The image processing apparatus according to claim 1 , wherein the second correction unit determines a correction characteristic based ...

NETWORK SELECTION SUPPORTING METHOD AND NETWORK SELECTION SUPPORTING APPARATUS

To support selection of a communication system of a network applied to an FA system of a user, a network selection supporting method according to an embodiment of the present invention includes a condition displaying step of displaying, on a condition input screen, one or a plurality of selection conditions set in advance related to the communication system of the network applied to the FA system, a condition receiving step of receiving an input of a selection condition desired by the user among the selection conditions displayed on the condition input screen, a communication system searching step of searching through a communication system database and finding a communication system matching the input selection condition, and a communication system list displaying step of displaying a search result of the communication system on the communication system list display screen as a list. 1. A network selection supporting method comprising:a condition displaying step of displaying, on a selection condition display screen, one or a plurality of selection conditions set in advance related to a communication system of a network applied to an FA system;a condition receiving step of receiving an input of a selection condition desired by a user among the selection conditions displayed on the selection condition display screen;a communication system searching step of searching through network information in which a correspondence relation between the one or plurality of selection conditions set in advance and the communication system of the network applied to the FA system is recorded and extracting a communication system matching the input selection condition; anda communication system list displaying step of displaying the extracted communication system on the communication system list display screen as a list.2. The network selection supporting method according to claim 1 , further comprising:a communication system receiving step of receiving an input for selecting one from ...

COLOR PROCESSING APPARATUS, COLOR PROCESSING METHOD, AND COMPUTER-READABLE NON-TRANSITORY TANGIBLE MEDIUM

A color processing apparatus for decomposing a color signal into an output color signal including a basic-color component, a black component, and an extra-color component is provided. The color processing apparatus includes an extra-color-component upper-limit-value determination unit that determines an extra-color-component upper limit value, a black-component upper-limit-value determination unit that determines a black-component upper limit value, a black-component-value determination unit that determines a value of the black component corresponding to the color signal, an extra-color-component-value determination unit that determines a value of the extra-color component corresponding to the color signal, and a basic-color-component-value determination unit that determines a value of the basic-color component corresponding to the color signal on the basis of the value of the black component and the value of the extra-color component. 1. A color processing apparatus for performing color decomposition of a color signal into an output color signal , the color signal being input , the output color signal including a basic-color component , a black component , and an extra-color component , the color processing apparatus comprising:an extra-color-component upper-limit-value determination unit that determines an extra-color-component upper limit value, the extra-color-component upper limit value being a value of the extra-color component corresponding to a maximum value of the black component which is obtainable using the color decomposition of the color signal;a black-component upper-limit-value determination unit that determines a black-component upper limit value, the black-component upper limit value being a maximum value of the black component corresponding to a minimum value of the extra-color component which is obtainable using the color decomposition of the color signal;a black-component-value determination unit that determines a value of the black component ...

IMAGE PROCESSING APPARATUS, NON-TRANSITORY COMPUTER READABLE MEDIUM, AND IMAGE PROCESSING METHOD

An image processing apparatus includes a determination unit that determines a type of a provided object, a resolution conversion unit that converts a resolution of the object determined by the determination unit as an image into a resolution of an output image, an object processing unit that performs a spatial frequency processing for the object after the resolution conversion by the resolution conversion unit depending on a ratio between a resolution of the object before the resolution conversion and a resolution of the output image, and a generating unit that generates the output image based on the object subjected to the spatial frequency processing in the object processing unit. 1. An image processing apparatus comprising:a determination unit that determines a type of a provided object;a resolution conversion unit that converts a resolution of the object determined by the determination unit as an image into a resolution of an output image;an object processing unit that performs a spatial frequency processing for the object after the resolution conversion by the resolution conversion unit depending on a ratio between a resolution of the object before the resolution conversion and a resolution of the output image; anda generating unit that generates the output image based on the object subjected to the spatial frequency processing in the object processing unit.2. The image processing apparatus according to claim 1 , wherein the object processing unit changes a frequency range of the spatial frequency processing depending on a ratio between the resolution before the resolution conversion of the object after the resolution conversion and the resolution of the output image.31. The image processing apparatus according to claim claim 1 , wherein the object processing unit changes an intensity of the spatial frequency processing depending on a ratio between the resolution before the resolution conversion of the object after the resolution conversion and the resolution ...

IN-VEHICLE APPARATUS AND COTNROL METHOD OF IN-VEHICLE APPARATUS

An in-vehicle apparatus and a control method of an in-vehicle apparatus, which is applied to a multimedia terminal having, for example, a function of navigation equipment and a function of video playback so as to improve usability to a user in a case of accepting an operation through a touch panel and a remote commander. A touch panel menu screen suitable for an operation through a touch panel and a remote commander menu screen suitable for an operation through a remote commander are switched to be displayed so as to accept an operation by a user. 1switching and displaying a touch panel menu screen suitable for operation through the touch panel and a remote commander menu screen suitable for operation through the remote commander in response to an operation by a user; andaccepting the operation by the user through the switched and displayed menu screen.. A control method of an in-vehicle apparatus which displays a plurality of menus and, in response to a selection of a menu from said plurality of menus by operations through a touch panel and a remote commander, performs processing corresponding to the selected menu, comprising the steps of: This application is a continuation of, and claims the benefit of priority under 35 U.S.C. §120 from, U.S. application Ser. No. 11/959,093 filed Dec. 18, 2007, which is a division of, and claims the benefit of priority under 35 U.S.C. §120 from, U.S. application Ser. No. 10/946,238 filed Sep. 22, 2004 (now U.S. Pat. No. 7,546,188 issued Jun. 9, 2009), which claims the benefit of priority under 35 U.S.C. §119 from Japanese Priority Document JP 2003-332768 filed in the Japanese Patent Office on Sep. 25, 2003. The entire contents of each of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to an in-vehicle apparatus and a control method of an in-vehicle apparatus, and is applicable to, for example, a multimedia terminal having a function of navigation equipment and a function of video ...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME

A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 20° C./cm or more.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further comprising the step of removing a portion ...

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot composed of single crystal silicon carbide, obtaining a silicon carbide substrate by slicing the ingot, and polishing a surface of the silicon carbide substrate. In the step of obtaining a silicon carbide substrate, the ingot is sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {0001} plane. In the step of polishing a surface of the silicon carbide substrate, at least one of main surfaces of the silicon carbide substrate is polished while the entire surface of at least one of the main surfaces of the silicon carbide substrate is in contact with a polishing surface. 1. A method of manufacturing a silicon carbide substrate , comprising the steps of:preparing an ingot composed of single crystal silicon carbide and having a diameter not smaller than 2 inches;obtaining a substrate by slicing said ingot; andpolishing a surface of said substrate,{'b': '0001', 'in said step of obtaining a substrate, said ingot being sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {} plane, and'}in said step of polishing a surface of said substrate, at least one main surface of said substrate being polished while entire surface of said at least one main surface of said substrate is in contact with a polishing surface.2. The method of manufacturing a silicon carbide substrate according to claim 1 , whereinin said step of obtaining a substrate, said ingot is sliced such that an off angle with respect to the {0001} plane of said at least one main surface is not smaller than 50° and not greater than 80°.3. The method of manufacturing a silicon carbide substrate according to claim 1 , whereinin said step of polishing a surface of said substrate, opposing ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof. 16-. (canceled)7. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing an ingot made of silicon carbide;obtaining a substrate from said ingot; andchecking whether or not a normal line of at least one main surface of said substrate obtained and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction.8. The method for manufacturing the silicon carbide substrate according to claim 7 , further comprising the step of checking whether or not the normal line of said one main surface of said substrate obtained and the normal line of the {03-38} plane form an angle of 10° or smaller in an orthogonal projection to a plane including a <−2110> direction and the <0001> direction.9. The method for manufacturing the silicon carbide substrate according to claim 7 , wherein said substrate has a diameter of 50.8 mm or greater.10. The method for manufacturing the silicon carbide substrate according to claim 7 , further comprising the steps of:arranging said substrate obtained, on a base substrate separately prepared; andconnecting said base substrate and said substrate to each other.11. The method for manufacturing the silicon carbide substrate according to claim 7 , further comprising the step of forming an epitaxial growth layer on said one main surface.12. A method for manufacturing a semiconductor device claim 7 , comprising the steps of:{'claim-ref': {'@ ...

COLOR PROCESSING APPARATUS AND METHOD, AND COMPUTER READABLE MEDIUM

A color processing apparatus includes the following elements. A point group generator generates a point group existing in a color gamut of an output apparatus. A design point group extracting unit extracts, from the point group, a design point group that satisfies predetermined design conditions. A corresponding point group setting unit sets, on the basis of the design point group, a corresponding point group indicating a boundary of a color gamut represented by the design point group, such that points of the corresponding point group are associated with individual points of a boundary point group existing on a boundary of the color gamut of the output apparatus. A design color gamut boundary generator generates a boundary of a design color gamut that satisfies the predetermined design conditions, by using a set of the boundary point group and the corresponding point group. 1. A color processing apparatus comprising:a point group generator that generates a point group existing in a color gamut of an output apparatus;a design point group extracting unit that extracts, from the point group, a design point group, which is a point group that satisfies predetermined design conditions;a corresponding point group setting unit that sets, on the basis of the design point group, a corresponding point group, which is a point group indicating a boundary of a color gamut represented by the design point group, such that points of the corresponding point group are associated with individual points of a boundary point group existing on a boundary of the color gamut of the output apparatus; anda design color gamut boundary generator that generates a boundary of a design color gamut, which is a color gamut that satisfies the predetermined design conditions, by using a set of the boundary point group and the corresponding point group.2. The color processing apparatus according to claim 1 , wherein the output apparatus outputs an image by using claim 1 , as wells as basic color ...

Liquid Crystal Display Device

A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate. 1. A liquid crystal device , comprising:a first substrate and a second substrate which are arranged to face each other with a liquid crystal layer there between;a plurality of gate signal lines and a plurality of drain signal lines formed on the first substrate;a plurality of pixel regions defined by the drain signal lines and the gate signal liens;at least a thin film transistor formed on the first substrate in each pixel region, each thin film transistor having a first semiconductor layer;a plurality of column spaces formed on the second substrate including first columnar spacers and second columnar spaces, the columnar spacers being formed on all of the gate singal lines in plain view; anda second semiconductor layer formed on the gate signal lines, andwherein the first columnar spacers contact to the first substrate side of the second substrate and the second columnar spacers do not contact to the first substrate side of the second substrate, the first columnar spacers and the second columnar spacers are arrangted on the gate signal lines, the first colunar spacers are arranged in a formation region of the second semiconductor layers, and the second colunmnar spacers are aranged in a non-formation region of the second semiconductor layers.2. A liquid crystal display device , comprising:a first substrate and a second substrate which are arranged to face each other with a liquid crystal layer there between;a plurality of gate signal lines and a plurality of drain signal lines formed on the first ...

Communication terminal and warning information retrieval method

A communication terminal includes a receiver that receives a one-segment signal from a broadcasting station among plural broadcasting stations that provide terrestrial digital broadcasting, an output unit that outputs the one-segment signal received by the receiver to a user; a channel search unit that searches for a specific broadcasting station that transmits the one-segment signal including an auxiliary information signal which is likely to include warning information, among the one-segment signals which are transmitted from the corresponding broadcasting stations, and a determination unit that determines, subsequent to termination of viewing with respect to the broadcasting station which is selected by the user, whether the auxiliary information signal included in the one-segment signal received from the specific broadcasting station by the receiver includes the warning information. When the auxiliary information signal includes the warning information, the output unit outputs the warning information to the user.

COMMUNICATION TERMINAL AND INFORMATION PROVIDING METHOD

A communication terminal includes a receiver for receiving a communication signal including urgent warning information, a current location information retrieving unit that retrieves location information regarding a current location of a user, a storage unit that stores information regarding a registered point specified by the user or a communication system, a processing unit that calculates a distance between the current location and the registered point, in response to receiving by the receiving unit of the communication signal, and an information providing unit that provides to-be-provided information including, at least, the distance to the user. 1. A communication terminal comprising:a receiver for receiving a communication signal including urgent warning information;a current location information retrieving unit that retrieves location information regarding a current location of a user;a storage unit that stores information regarding a registered point specified by the user or a communication system;a processing unit that calculates a distance between the current location and the registered point, in response to receiving by the receiving unit of the communication signal; andan information providing unit that provides to-be-provided information including, at least, the distance to the user.2. The communication terminal according to claim 1 ,wherein the storage unit stores, for each of types of disasters, the information regarding the registered point specified by the user or the communication system.3. The communication terminal according to claim 2 ,wherein the information providing unit provides, for each of the types of the disasters, the to-be-provided information including, at least, the distance to the user.4. The communication terminal according to claim 3 ,wherein the information providing unit provides, for each of the types of the disasters, the to-be-provided information including, at least, the distance to the user, in accordance with a priority ...

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL

A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method includes the following steps. That is, there are prepared a seed substrate made of silicon carbide and a silicon carbide source material. By sublimating the silicon carbide source material, the silicon carbide single-crystal is grown on a growth surface of the seed substrate. In the step of growing the silicon carbide single-crystal, a first carbon member provided at a position facing a side wall of the seed substrate is etched at a rate of 0.1 mm/hour or less. By suppressing a change in growth condition for the silicon carbide single-crystal in the crucible, there can be provided a method for manufacturing a silicon carbide single-crystal so as to stably grow the silicon carbide single-crystal. 1. A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method , comprising the steps of:preparing a seed substrate made of silicon carbide, and a silicon carbide source material; andgrowing said silicon carbide single-crystal on a growth surface of said seed substrate by sublimating said silicon carbide source material, a first carbon member provided at a position facing a side wall of said seed substrate being etched at a rate of 0.1 mm/hour or less in the step of growing said silicon carbide single-crystal.2. The method for manufacturing the silicon carbide single-crystal according to claim 1 , wherein in the step of growing said silicon carbide single-crystal claim 1 , said first carbon member is etched at a rate of 0.05 mm/hour or less.3. The method for manufacturing the silicon carbide single-crystal according to claim 1 , wherein said silicon carbide single-crystal has a maximum height of 50 mm or more.4. The method for manufacturing the silicon carbide single-crystal according to claim 1 , further ...

Bio-Hybrid Material, Production Method Therefor, and Stent

Provided is a bio-hybrid material that does not cause elution of nickel ions and has an excellent endothelialization ability, a production method therefor, and a stent. The bio-hybrid material () used includes an alloy part () free of Ni, an organic acid () having two or more active esters, and a cytokine (). The alloy part () free of Ni forms an ester bond with the organic acid (), and the organic acid () and the cytokine () are immobilized via an amide bond. 2. The bio-hybrid material according to claim 1 , wherein the cytokine is one selected from a group consisting of VEGF claim 1 , EGF claim 1 , FGF claim 1 , HGF claim 1 , PDGF claim 1 , and BMP.3. The bio-hybrid material according to claim 1 , wherein the organic acid having two or more active ester groups is one selected from a group consisting of citric acid claim 1 , tartaric acid claim 1 , malic acid claim 1 , succinic acid claim 1 , oxalacetic acid claim 1 , cis-aconitic acid claim 1 , 2-ketoglutaric acid claim 1 , maleic acid claim 1 , fumaric acid claim 1 , and any derivative thereof.4. The bio-hybrid material according to claim 1 , wherein the alloy part free of Ni is an alloy containing two or more elements selected from a group consisting of Fe claim 1 , Mo claim 1 , Co claim 1 , and Cr.5. The bio-hybrid material according to claim 4 , wherein the alloy contains nitrogen in an amount ranging from 0.5 wt % to 1 wt %.6. A production method of a bio-hybrid material comprising the steps of:surface-treating, in which hydrophilic surface treatment is performed on an alloy part free of Ni;organic acid-immobilizing, in which an organic acid having two or more active ester groups is immobilized on the alloy part free of Ni; andcytokine-immobilizing, in which a cytokine is immobilized on the organic acid.7. The production method of a bio-hybrid material according to claim 6 , wherein the hydrophilic surface treatment is UV irradiation treatment.8. The production method of a bio-hybrid material according to ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. 1. A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation , said method comprising the steps of:preparing a seed substrate made of silicon carbide and silicon carbide raw material, andgrowing said silicon carbide single crystal on a growth face of said seed substrate by sublimating said silicon carbide raw material,in said step of growing said silicon carbide single crystal, a maximum growing rate of said silicon carbide single crystal growing on said growth face of said seed substrate being greater than a maximum growing rate of silicon carbide crystal growing on a surface of said silicon carbide raw material.2. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed substrate exceeds 20 mm in said step of growing said silicon carbide single crystal.3. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed ...

MACROLIDE COMPOUND HAVING ANTICANCER EFFECT

The present invention relates to a macrolide compound expected to have a cell growth-inhibiting activity and a novel anticancer drug utilizing the compound. Specifically, the invention relates to a compound represented by Formula (I) or (II) or a pharmaceutically acceptable salt thereof and relates to a cell growth inhibitor and an anticancer drug each containing the compound or the salt as an active ingredient. 2. A cell growth inhibitor comprising the compound or a pharmaceutically acceptable salt thereof according to .3. The cell growth inhibitor according to claim 2 , wherein the inhibitor inhibits the growth of cancer cells.4. The cell growth inhibitor according to claim 3 , wherein the cancer is selected from the group consisting of pancreatic cancer claim 3 , colon cancer claim 3 , liver cancer claim 3 , brain cancer claim 3 , lung cancer claim 3 , squamous cell carcinoma claim 3 , bladder cancer claim 3 , gastric cancer claim 3 , pancreatic cancer claim 3 , prostatic cancer claim 3 , kidney cancer claim 3 , colorectal cancer claim 3 , breast cancer claim 3 , head cancer claim 3 , neck cancer claim 3 , esophageal cancer claim 3 , gynecological cancer claim 3 , thyroid cancer claim 3 , lymphoma claim 3 , chronic leukemia claim 3 , and acute leukemia.5. The cell growth inhibitor according to claim 3 , wherein the cancer is lung cancer.6. An anticancer drug comprising the compound or a pharmaceutically acceptable salt thereof according to .7. The anticancer drug according to claim 6 , wherein the cancer is selected from the group consisting of pancreatic cancer claim 6 , colon cancer claim 6 , liver cancer claim 6 , brain cancer claim 6 , lung cancer claim 6 , squamous cell carcinoma claim 6 , bladder cancer claim 6 , gastric cancer claim 6 , pancreatic cancer claim 6 , prostatic cancer claim 6 , kidney cancer claim 6 , colorectal cancer claim 6 , breast cancer claim 6 , head cancer claim 6 , neck cancer claim 6 , esophageal cancer claim 6 , gynecological cancer ...

COMMUNICATION TERMINAL AND WARNING INFORMATION OBTAINING METHOD

A communication terminal includes: a first receiving unit configured to receive a communication signal in a first communication system; a second receiving unit configured to receive a communication signal in a second communication system; a position information obtaining unit configured to obtain position information of a user; a mode determination unit configured to activate the second receiving unit if the position information obtaining unit obtains position information of the user in a case where the first receiving unit cannot receive a communication signal; and a user interface unit configured to provide the user with warning information extracted from the communication signal received by the second receiving unit. 1. A communication terminal comprising:a first receiving unit configured to receive a communication signal in a first communication system;a second receiving unit configured to receive a communication signal in a second communication system;a position information obtaining unit configured to obtain position information of a user;a mode determination unit configured to activate the second receiving unit if the position information obtaining unit obtains position information of the user in a case where the first receiving unit cannot receive a communication signal; anda user interface unit configured to provide the user with warning information extracted from a communication signal received by the second receiving unit.2. The communication terminal as claimed in claim 1 , wherein the first communication system is a cellular mobile communication system claim 1 , and the second communication system is a communication system for performing digital terrestrial television broadcasting.3. The communication terminal as claimed in claim 2 , wherein the communication signal received by the second receiving unit includes an AC signal.4. The communication terminal as claimed in claim 3 , wherein claim 3 , if the AC signal does not include the warning information ...

Method for producing silicon carbide crystal

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

Silicon carbide crystal and method of manufacturing silicon carbide crystal

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An image processing apparatus includes: an adjusting unit that adjusts a color characteristic in relation to a color image; a conversion unit that converts the color image of which color characteristic is adjusted with the adjusting unit into a luminance-chromaticity image; a band image generating unit that generates a band image that represents a predetermined band from a luminance image of the luminance-chromaticity image; an emphasizing unit that obtains a band emphasized image that emphasizes a band using the luminance image and the band image; and a setting unit that sets an emphasized degree of the band performed by using the emphasizing unit and an adjusted degree of the color characteristic performed by using the adjusting unit. 1. An image processing apparatus comprising:an adjusting unit that adjusts a color characteristic in relation to a color image;a conversion unit that converts the color image of which color characteristic is adjusted with the adjusting unit into a luminance-chromaticity image;a band image generating unit that generates a band image that represents a given band from a luminance image of the luminance-chromaticity image;an emphasizing unit that obtains a band emphasized image that emphasizes a band using the luminance image and the band image; anda setting unit that sets an emphasized degree of the band performed by using the emphasizing unit and an adjusted degree of the color characteristic performed by using the adjusting unit.2. An image processing apparatus comprising:a luminance image generating unit that generates a luminance image from a color image;a band image generating unit that generates a band image that represents a given band from the luminance image;an emphasizing unit that obtains a band emphasized image that emphasizes a band using the luminance image and the band image;an adjusting unit that adjusts the color characteristic in relation to the color image;a conversion unit that converts the color image of which the ...

BIOABSORBABLE STENT

Provided is a biodegradable stent comprising a magnesium alloy free of a rare earth element and aluminum. The stent comprises: a core structure comprising a magnesium alloy containing 90 wt % or more of magnesium as a main component, and zinc, zirconium, and manganese as accessary components, the magnesium alloy being free of a rare earth element and aluminum; a first corrosion resistant layer formed on the core structure and containing magnesium fluoride as a main component; and a second corrosion resistant layer formed on the first corrosion resistant layer and comprising a parylene. A method for producing such a bioabsorbable stent is also provided. 1. A bioabsorbable stent comprising:a core structure comprising a magnesium alloy containing 90 wt % or more of magnesium as a main component, and zinc, zirconium, and manganese as accessary components, the magnesium alloy being free of a rare earth element and aluminum;a first corrosion resistant layer formed on the core structure of the magnesium alloy and containing magnesium fluoride as a main component; anda second corrosion resistant layer formed on the first corrosion resistant layer and comprising a parylene.2. The bioabsorbable stent according to claim 1 , wherein the rare earth element is at least one selected from the group consisting of Sc claim 1 , Y claim 1 , Dy claim 1 , Sm claim 1 , Ce claim 1 , Gd claim 1 , La claim 1 , and Nd.3. The bioabsorbable stent according to claim 1 , wherein in the magnesium alloy claim 1 , unavoidable impurities selected from the group consisting of Fe claim 1 , Ni claim 1 , Co claim 1 , and Cu are contained in a total content of 30 ppm or less.4. The bioabsorbable stent according to claim 3 , wherein the magnesium alloy comprises 0.95 to 2.00 wt % of zinc claim 3 , 0.05 to 0.80 wt % of zirconium claim 3 , 0.05 to 0.40 wt % of manganese claim 3 , and the balance consisting of magnesium and unavoidable impurities.5. The bioabsorbable stent according to claim 1 , wherein the ...

Implant for non-luminal area

A bioabsorbable implant for non-luminal region comprising: a core structure including a magnesium alloy having a predetermined shape; a first corrosion-resistant layer containing a magnesium fluoride layer as a main component formed on the core structure via fluorination of a surface of the magnesium alloy; and a second corrosion-resistant layer containing a parylene formed on the magnesium fluoride layer.

IN-VEHICLE APPARATUS AND CONTROL METHOD OF IN-VEHICLE APPARATUS

An in-vehicle apparatus and a control method of an in-vehicle apparatus, which is applied to a multimedia terminal having, for example, a function of navigation equipment and a function of video playback so as to improve usability to a user in a case of accepting an operation through a touch panel and a remote commander. A touch panel menu screen suitable for an operation through a touch panel and a remote commander menu screen suitable for an operation through a remote commander are switched to be displayed so as to accept an operation by a user. 1. An apparatus capable of performing user selected operations comprising: [ the touch panel screen image for an operation through a touch panel, containing a first selectable image located at a first position and a second selectable image located at a second position, wherein the first position and the second position do not overlap each other on the screen,', 'the first remote control screen image for an operation through a remote control containing a third selectable image located at a third position on the screen, the third position being a different position than the first position,', 'the second remote control screen image for an operation through the remote control, containing a fourth selectable image located at a fourth position on the screen, the fourth position being a different position than the second position,', 'both the first selectable image within the touch panel screen image and the third selectable image within the first remote control screen image indicating the same first function,', 'both the second selectable image within the touch panel screen image and the fourth selectable image within the second remote control screen image indicating the same second function, the second function being different from the first function,, 'generate display control signals for each of a touch panel screen image, a first remote control screen image, and a second remote control screen image, so as to display each at ...

STRETCHABLE TAPE FLAG

A stretchable tape flag, wherein a backing layer has a stretchable portion capable of being stretched by hand and has elastic and plastic deformation characteristics on at least one portion; an adhesive layer capable of reapplication and placed on at least part of one side of the backing layer; and stuck on the object with the stretchable portion of the backing layer extended. 16-. (canceled)7. A stretchable tape flag comprising a backing layer having repositionable adhesive on at least a portion of side of the backing layer , wherein a portion of the backing layer is capable of being stretched by hand so as to increase the distance of one portion of the repositionable adhesive from another portion of the repositionable adhesive and wherein the repositionable adhesive maintains adhesive strength after the backing is stretched.81. The stretchable tape flag according to claim wherein the stretchable portion is capable of being stretched at least 100% in one direction91. The stretchable tape flag according to claim wherein the stress of the stretchable portion when being stretched 100% is less than about 15 MPa.101. The stretchable tape flag according to claim wherein the adhesive is in discontinuous portions wherein the portion of the backing layer between adhesive portions is capable of being stretched by hand. The present invention relates to a stretchable tape flag which can be used as an index marker.A film-shaped polymer base material or backing, wherein an tape flag coated with an adhesive capable of reapplication without reapplying the adhesive to the area, sometimes referred to as index markers or book marks, which are used to mark pages of books, documents or the like, by being applied thereon, and may be used as an index marker. Illustrative examples are disclosed in Japanese Patent Laid-Open Application No. 4-504004 and U.S. Pat. No. 5,283,091.There are many instances where since the back material is colored, the tape flags are designed so that the area to ...

SURFACE-MODIFIED MAGNESIUM ALLOY

To provide a magnesium alloy with improved corrosion resistance by surface modification, and a production method thereof. (1) The surface-modified magnesium alloy comprising: a magnesium alloy having an arbitrary shape; a magnesium fluoride layer formed by fluorination of the surface of the magnesium alloy; and a diamond-like carbon layer formed on the magnesium fluoride layer. (2) The method comprising: subjecting a surface of a magnesium alloy having an arbitrary shape to fluorination treatment to form a magnesium fluoride layer on the surface of the magnesium alloy, and then subjecting the magnesium alloy with the magnesium fluoride layer to be placed in a high-frequency plasma CVD device such that a source gas containing carbon is introduced to form a diamond-like carbon layer on the magnesium fluoride layer. 1. A surface-modified magnesium alloy comprising:a magnesium alloy having an arbitrary shape;a magnesium fluoride layer formed on the magnesium alloy via fluorination of a surface of the magnesium alloy; anda diamond-like carbon layer formed on the magnesium fluoride layer.2. The surface-modified magnesium alloy according to claim 1 , wherein the magnesium alloy contains claim 1 , in % by mass claim 1 , 0.95 to 2.00% Zn claim 1 , 0.05% or more and less than 0.30% Zr claim 1 , 0.05 to 0.20% Mn claim 1 , and the balance consisting of Mg and unavoidable impurities claim 1 , with an average crystal grain size of 1.0 to 3.0 μm and a standard deviation of grain size distribution of 0.7 or less.3. The surface-modified magnesium alloy according to claim 1 , wherein the magnesium alloy has a wheel shape claim 1 , a plate shape claim 1 , a rod shape claim 1 , a pipe shape claim 1 , a band shape claim 1 , a wire shape claim 1 , a ring shape claim 1 , or a combination of at least one shape as described above.4. The surface-modified magnesium alloy according to claim 1 , wherein the surface-modified magnesium alloy is an alloy for orthopedic implants claim 1 , an alloy ...

CHARGING PROCESSING SYSTEM, CHARGING PROCESSING METHOD, AND RECORDING MEDIUM

A charging processing system includes: a receiving unit configured to receive a request to execute a first function which a first device has, from a second device that does not have the first function; a function executing unit configured to execute the first function; and a charging processing unit configured to perform charging processing such that an amount of charge for execution of the first function is larger as there is a larger difference between a performance with regard to the first function and a performance of the second device or a performance with regard to a second function which has a lower performance than the first function and which the second device does not have. 1. A charging processing system comprising:a receiving unit configured to receive a request to execute a first function which a first device has, from a second device that does not have the first function;a function executing unit configured to execute the first function; anda charging processing unit configured to perform charging processing such that an amount of charge for execution of the first function is larger as there is a larger difference between a performance with regard to the first function and a performance of the second device or a performance with regard to a second function which has a lower performance than the first function and which the second device does not have.2. The charging processing system according to claim 1 , wherein the charging processing unit is configured to perform the charging processing such that the amount of charge is larger as a time period which elapsed after the second device becomes able to use the first function claim 1 , is longer.3. The charging processing system according to claim 1 , wherein the charging processing unit performs the charging processing such that the amount of charge is smaller as a time period which elapsed after the second device becomes able to use the first function claim 1 , is longer.4. The charging processing ...

Information processing apparatus, image processing system, and information processing method

An information processing apparatus includes circuitry that receives multiple output commands from one or more inputting image processing apparatuses, each command instructing to output image data through an outputting information processing apparatus, acquires a status of the outputting image processing apparatus, determines priorities of the multiple output commands to be transferred to the outputting image processing apparatus based on the acquired status of the outputting image processing apparatus, and modifies an order of processing the output commands in accordance with the determined priorities of the output commands.

CERAMIC ASSEMBLED BOARD, METHOD OF MANUFACTURING THE SAME, CERAMIC SUBSTRATE AND CERAMIC CIRCUIT SUBSTRATE

A ceramic assembled board is formed by cutting continuous dividing grooves on one or both of the surfaces of a sintered ceramic board by way of laser machining to produce a large number of circuit substrates and at least one of the continuous grooves has a largest depth section and a smallest depth section with a depth difference Δd of 10 μm≦Δd≦50 μm. A ceramic substrate is produced by dividing the ceramic assembled board and at least one of its lateral surfaces is a surface formed by dividing the ceramic assembled board along the continuous grooves, the arithmetic mean roughness Ra2 of the machined surfaces of the continuous grooves being smaller than the arithmetic mean roughness Ra1 of the surfaces of broken sections with regard to the arithmetic mean roughness Ra of the lateral surfaces. 112.-. (canceled)14. The ceramic assembled board according to claim 13 ,wherein, 0.053<ρ/B≦0.3.15. The ceramic assembled board according to claim 13 ,wherein, dm is not greater than B/2, a groove width c is not greater than 0.2 mm and a width c1 of the heat-affected zones formed at the opposite sides of the continuous dividing grooves is not greater than 1.5 times of the groove width c.16. The ceramic assembled board according to claim 13 ,wherein, a displacement e of the center line of the groove width c and the deepest part is not greater than c/4 at any arbitrarily taken cross section of the continuous dividing grooves.17. The ceramic assembled board according to claim 13 ,wherein, the ceramic is silicon nitride and the continuous dividing grooves are formed by irradiating a laser beam from a fiber laser. The present invention is a divisional application of U.S. patent application Ser. No. 13/000,248, filed Apr. 5, 2011, which is a 35 USC 371 national stage entry of PCT/JP2009/061342, filed Jun. 22, 2009, which claims priority from Japanese Patent Application No. 2008-161792, filed on Jun. 20, 2008, and from Japanese Patent Application No. 2009-042071, filed on Feb. 25, 2009, ...

Host providing system and communication control method

A host providing system includes a physical host network switch which determines permission and non-permission of communication on the basis of whether or not information pieces indicating users correlated with information indicating a transmission source and information indicating a transmission destination included in communication data from a physical instance match each other, and controls the communication data on the basis of a determination result. Accordingly, since only communication between instances of the same user is permitted, and thus communication from a physical instance is appropriately controlled, it is possible to ensure security in the system.

WOUND MAGNETIC CORE AND METHOD OF PRODUCING THE SAME

The invention provides a wound magnetic core which is configured by winding an Fe-based amorphous alloy ribbon, the wound magnetic core containing a recess row including plural recesses formed by laser irradiation in a central part of the Fe-based amorphous alloy ribbon in a width direction, in which a ratio of a length of the central part to a total width is from 0.2 to 0.8. 1. A wound magnetic core which is configured by winding an Fe-based amorphous alloy ribbon , the wound magnetic core comprising a recess row including a plurality of recesses formed by laser irradiation in a central part of the Fe-based amorphous alloy ribbon in a width direction , wherein a ratio of a length of the central part to a total width is from 0.2 to 0.8.2. The wound magnetic core according to claim 1 , wherein an interval between the recess rows in a longitudinal direction of the alloy ribbon is from 2 mm to 20 mm.3. The wound magnetic core according to or claim 1 , wherein a thickness of the Fe-based amorphous alloy ribbon is from 15 μm to 40 μm.4. The wound magnetic core according to or claim 1 , wherein a total width of the Fe-based amorphous alloy ribbon is from 15 mm to 250 mm.5. The wound magnetic core according to or claim 1 , wherein center-to-center distances between adjacent recesses in the recess rows are equal claim 1 , and a formation interval of the recesses is in a range of from 4 pieces/mm to 8 pieces/mm in the width direction.6. The wound magnetic core according to claim 5 , wherein a planar view shape of the recesses is a circular or elliptical shape.7. A method of producing a wound magnetic core claim 5 , the method comprising:forming recesses by irradiating a central part of an Fe-based amorphous alloy ribbon in a width direction with pulsed laser light to form recesses, wherein a ratio of a length of the central part to a total width is from 0.2 to 0.8, andwinding the Fe-based amorphous alloy ribbon with the formed recesses to form a magnetic core.8. The method ...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, IMAGE PROCESSING SYSTEM, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An image processing apparatus includes a representative position generation unit, a region extraction unit, and a selection information acceptance unit. The representative position generation unit generates a representative position included in a region that is part of an image in accordance with a feature value indicating a feature of the image. The region extraction unit extracts, based on the representative position, plural regions as candidate regions each having a feature value similar to the feature value of the representative position. The selection information acceptance unit accepts, from a user, selection of at least one region from among the extracted plural regions. 1. An image processing apparatus comprising:a representative position generation unit that generates a representative position included in a region that is part of an image in accordance with a feature value indicating a feature of the image;a region extraction unit that extracts, based on the representative position, a plurality of regions as candidate regions each having a feature value similar to the feature value of the representative position; anda selection information acceptance unit that accepts, from a user, selection of at least one region from among the extracted plurality of regions.2. The image processing apparatus according to claim 1 , further comprising an image smoothing unit that smooths the image claim 1 ,wherein the representative position generation unit generates the representative position from the image smoothed by the image smoothing unit.3. The image processing apparatus according to claim 1 , further comprising a band division unit that divides the image into bands claim 1 ,wherein the representative position generation unit generates the representative position from the image processed by the band division unit.4. The image processing apparatus according to claim 1 , wherein the feature value is at least one of a magnitude of a pixel value of each pixel ...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD AND COMPUTER READABLE MEDIUM

An image processing apparatus includes a reflectivity image generation unit that generates a reflectivity image in which a reflectivity component of an original image is used as a pixel value, from the original image, a determining unit that determines a degree of maintenance of at least one of a dark part and a bright part of the original image using the original image and a degree of enhancement of the reflectivity component of the original image and an enhancement image generation unit that generates an enhancement image in which the reflectivity component of the original image is enhanced using the reflectivity image, the degree of enhancement, and the degree of maintenance. 1. An image processing apparatus comprising:a reflectivity image generation unit that generates a reflectivity image in which a reflectivity component of an original image is used as a pixel value, from the original image;a determining unit that determines a degree of maintenance of at least one of a dark part and a bright part of the original image using the original image and a degree of enhancement of the reflectivity component of the original image; andan enhancement image generation unit that generates an enhancement image in which the reflectivity component of the original image is enhanced using the reflectivity image, the degree of enhancement, and the degree of maintenance.2. The image processing apparatus according to claim 1 , wherein the determining unit determines a bright-dark part maintenance degree which is the degrees of maintenance of the dark part and the bright part of the original image as the degree of maintenance.3. The image processing apparatus according to claim 2 , wherein the determining unit determines the bright-dark part maintenance degree so that the darker the pixel of the original image claim 2 , the higher becomes the bright-dark part maintenance degree claim 2 , and that the brighter the pixel of the original image claim 2 , the higher becomes the bright- ...

Fe-BASED AMORPHOUS ALLOY RIBBON AND METHOD FOR PRODUCING SAME, IRON CORE, AND TRANSFORMER

One aspect of the invention provides an Fe-based amorphous alloy ribbon having a free solidified surface and a roll contact surface, in which the Fe-based amorphous alloy ribbon has plural laser irradiation mark rows each formed from plural laser irradiation marks on at least one surface of the free solidified surface or the roll contact surface, a line interval is from 10 mm to 60 mm, which is a centerline interval in a middle section in a width direction, between mutually adjacent laser irradiation mark rows, a spot interval is from 0.10 mm to 0.50 mm, which is an interval between center points of the plural laser irradiation marks in each of the plural laser irradiation mark rows, and the number density D (=(1/d1)×(1/d2), d1: line interval, d2: spot interval) of the laser irradiation marks is from 0.05 marks/mmto 0.50 marks/mm. 1. An Fe-based amorphous alloy ribbon having a free solidified surface and a roll contact surface ,wherein the Fe-based amorphous alloy ribbon has a plurality of laser irradiation mark rows each configured from a plurality of laser irradiation marks on at least one surface of the free solidified surface or the roll contact surface; andwherein the Fe-based amorphous alloy ribbon has:a line interval of from 10 mm to 60 mm, the line interval being defined as a centerline interval in a middle section in a width direction, between mutually adjacent laser irradiation mark rows of a plurality of such laser irradiation mark rows arranged in a casting direction of the Fe-based amorphous alloy ribbon, the width direction being orthogonal to the casting direction,a spot interval of from 0.10 mm to 0.50 mm, the spot interval being defined as an interval between center points of the plurality of laser irradiation marks in each of the plurality of laser irradiation mark rows, and{'sup': 2', '2, 'a number density D of the laser irradiation marks of from 0.05 marks/mmto 0.50 marks/mm, provided that the line interval is d1 (mm), the spot interval is d2 (mm ...

IMAGE PROCESSING APPARATUS, IMAGE ADJUSTING APPARATUS, IMAGE PROCESSING METHOD AND COMPUTER READABLE MEDIUM

An image processing apparatus includes: a decomposing section that decomposes a luminance component of a given original image into a plurality of band images in respective bands; a band intensity calculating section that calculates band intensities of the respective band images; and a determining section that determines band selection information indicating an emphasis band and band emphasis information to be used for controlling a degree of image emphasis based on the band intensities of the respective bands. 1. An image processing apparatus comprising:a decomposing section that decomposes a luminance component of a given original image into a plurality of band images in respective bands;a band intensity calculating section that calculates band intensities of the respective band images; anda determining section that determines band selection information indicating an emphasis band and band emphasis information to be used for controlling a degree of image emphasis based on the band intensities of the respective bands.2. The image processing apparatus according to claim 1 , wherein the decomposing section sets a plurality of bands that range from a low-frequency band to a high-frequency band and include at least one low-frequency-side band not including zero frequency.3. The image processing apparatus according to claim 1 , wherein the band intensity calculating section calculates a band intensity of each of the band images based on an integration value of pixel values thereof.4. The image processing apparatus according to claim 1 , wherein the determining section determines band selection information and band emphasis information based on differences between the band intensities of the respective bands and set band reference values.5. The image processing apparatus according to claim 1 , wherein the determining section determines band selection information based on differences between the band intensities of the respective bands and set band reference values and ...

BRAKE HYDRAULIC PRESSURE CONTROLLER AND MOTORCYCLE

A brake hydraulic pressure controller includes a base body that is formed with a channel for a hydraulic fluid therein. A first banjo with a first end, to which a brake pipe is connected, is fixed to a first port of the channel by a banjo bolt. A second end of the first banjo, to which the brake pipe is not connected, is inserted in a bottomed hole that is perforated in specified depth on an outer surface of the base body and into which the hydraulic fluid does not flow in an entire region of the specified depth, or extends to the outside of a side of the base body and is locked to an edge on the side of the base body. 1. A brake hydraulic pressure controller comprising:a base body that is formed with a channel for a hydraulic fluid therein, whereina first banjo with a first end, to which a brake pipe is connected, is fixed to a first port of the channel by a banjo bolt, anda second end of the first banjo, to which the brake pipe is not connected, is inserted in a bottomed hole that is perforated in specified depth on an outer surface of the base body and into which the hydraulic fluid does not flow in an entire region of the specified depth, or extends to the outside of a side of the base body and is locked to an edge on the side of the base body.2. The brake hydraulic pressure controller according to claim 1 , whereinthe second end of the first banjo is inserted in the bottomed hole, andthe bottomed hole is formed on a first surface of the base body that is formed with the first port.3. The brake hydraulic pressure controller according to claim 1 , whereina second banjo with a first end, to which the brake pipe is connected, is fixed to a second port of the channel by a banjo bolt, andthe second banjo is locked to the first banjo.4. The brake hydraulic pressure controller according to claim 3 , whereinthe first end of the second banjo is locked to the first banjo.5. The brake hydraulic pressure controller according to claim 3 , whereina second end of the second ...

TRANSACTION TERMINAL DEVICE

When settlement terminal device performs a settlement process with a settlement destination device (for example, an acquirer or a settlement processor), settlement terminal device displays a screen regarding the settlement process on display unit of touch panel and detects an input operation of important key input reception icon displayed on display unit. CPU determines whether an input operation with respect to this important key input reception icon, that is, an operation for selecting important key input reception icon and dragging and dropping important key input reception icon to YES icon has been performed. When a drag and drop operation of important key input reception icon is detected, CPU executes content of the input operation with respect to important key input reception icon, and transmits a settlement processing request to the settlement destination device. Settlement terminal device facilitates the operator being conscious of an operation with respect to a specific target. 1. A transaction terminal device , comprising:a settlement processing unit that performs a settlement process with a settlement destination device;a touch panel that displays various screens regarding the settlement process; andan input operation detection unit that detects an input operation with respect to a specific target in the screen displayed on the touch panel,wherein when the input operation with respect to the specific target is a predetermined input operation, the settlement processing unit executes a process according to the predetermined input operation.2. The transaction terminal device of claim 1 ,wherein the settlement processing unit causes the touch panel to display a predetermined input reception icon on the screen regarding the settlement process, andthe predetermined input operation includes an operation for selecting the specific target, and an input operation with respect to the input reception icon after the selecting operation.3. The transaction terminal ...

SILICON CARBIDE SUBSTRATE

A first circular surface () is provided with a first notch portion (N) having a first shape. A second circular surface () is opposite to the first circular surface and is provided with a second notch portion (N) having a second shape. A side surface () connects the first circular surface () and the second circular surface () to each other. The first notch portion (N) and the second notch portion (N) are opposite to each other. The side surface () has a first depression (Da) connecting the first notch portion (N) and the second notch portion (N) to each other. 118-. (canceled)19: A silicon carbide substrate having a single-crystal structure , comprising:a first circular surface provided with a first notch portion;a second circular surface opposite to said first circular surface and provided with a second notch portion; anda side surface connecting said first and second circular surfaces to each other, said first and second notch portions being opposite to each other, said side surface having a first depression connecting said first and second notch portions to each other, wherein shapes of said first and second notch portions are different from each other such that the silicon carbide substrate has asymmetry for given turnover of the silicon carbide substrate.20: The silicon carbide substrate according to claim 19 , wherein said first circular surface has a surface roughness different from that of said second circular surface.21: The silicon carbide substrate according to claim 20 , wherein one of said first and second circular surfaces has a surface roughness Ra less than 10 nm and the other thereof has a surface roughness Ra equal to or greater than 10 nm.22: The silicon carbide substrate according to claim 19 , wherein each of said first and second circular surfaces has a diameter equal to or greater than 15 cm.23: The silicon carbide substrate according to claim 19 , wherein:said single-crystal structure has hexagonal crystal, andsaid first notch portion is ...

TRANSACTION TERMINAL DEVICE

When settlement terminal device performs a settlement process with a settlement destination device (for example, an acquirer or a settlement processor), settlement terminal device displays a screen regarding the settlement process on display unit of touch panel and detects an input operation of important key input reception icon displayed on display unit. CPU determines whether an input operation with respect to this important key input reception icon, that is, an operation for selecting important key input reception icon and dragging and dropping important key input reception icon to YES icon has been performed. When a drag and drop operation of important key input reception icon is detected, CPU executes content of the input operation with respect to important key input reception icon, and transmits a settlement processing request to the settlement destination device. Settlement terminal device facilitates the operator being conscious of an operation with respect to a specific target. 1. A transaction terminal device , comprising:a touch panel that displays various screens;an input operation detection unit that detects an input operation with respect to the screen displayed on the touch panel;a mode control unit that causes display of the touch panel to transition to a dark display when the input operation is not detected for a predetermined time or more; anda settlement processing unit that performs a settlement process with a settlement destination device,wherein the mode control unit causes display of content displayed on the touch panel to be continued instead of causing the display of the touch panel to transition to the dark display even when the input operation is not detected for the predetermined time or more while at least the settlement processing unit is operating.2. The transaction terminal device of claim 1 ,wherein the mode control unit causes the display of the content displayed on the touch panel to be continued instead of causing the display of ...

WIRE FOR I-SHAPE OIL RINGS AND PRODUCING METHOD OF THE SAME

Provided is a wire rod for an I-type oil ring, which includes right and left rail portions and a web portion connecting the rail portions, which has an oil hole or a molten through hole formed in the web portion, and which has a circumscribing circle diameter of 10 mm or less in its transverse contour. The molten through hole has such a remolten portion formed on its exit side as encloses the exit of the molten through hole. The remolten portion exceeds such a molten portion in the transverse section along the center of the molten through hole as is formed in the molten through hole, and is formed to have 200 μm or less from the outer circumference of the molten through hole and 100 μm or less in the depth direction of the molten through hole. 1. A method of producing a wire for I-shape oil rings , which wire comprises a left and a right rail sections , and a web section connecting the rail sections with each other , has oil holes as through holes formed by melting , and has a diameter of not more than 10 mm which is defined by a circle circumscribing a contour of a cross section of the wire ,wherein the method comprises the steps of:piercing the through holes by means of laser; andforming a remelted and solidified portion surrounding an outlet of each of the through holes by means of laser,wherein the remelted and solidified portion is formed so as to exceed a melted and solidified region around the through hole but not to exceed 200 μm from the periphery of the through hole, when viewing a cross section of the wire taken along the axis of the through hole, andwherein the remelted and solidified portion is formed so as not to exceed 100 μm in a depth direction from the outlet of the through hole.2. The method of manufacturing a wire for I-shape oil rings claim 1 , according to claim 1 , wherein the through holes are formed in a direction from a smaller opening angle side toward a larger opening angle side of the wire when viewing a cross section of the wire.3. The ...

IMAGE FORMING SYSTEM, INFORMATION PROCESSING APPARATUS, AND INFORMATION PROCESSING METHOD

An image forming system includes one or more image forming apparatuses and an information processing apparatus connected to the one or more image forming apparatuses through a network. The information processing apparatus includes circuitry that registers an image forming job that is received from one of the image forming apparatuses in association with information on a user who has authority to execute the image forming job, acquires information on a location of the user, determines whether or not the user is located at a first area based on the information on the location of the first user to generate a first determination result, and determines an operation to be performed on the image forming job based on the first determination result. 1. An image forming system , comprising:one or more image forming apparatuses; and register an image forming job that is received from one of the image forming apparatuses in association with information on a user who has authority to execute the image forming job;', 'acquire information on a location of the user;', 'determine whether or not the user is located at a first area based on the information on the location of the first user to generate a first determination result; and', 'determine an operation to be performed on the image forming job based on the first determination result., 'an information processing apparatus connected to the one or more image forming apparatuses through a network, the information processing apparatus including circuitry to2. The image forming system according to claim 1 , wherein the circuitry in the information processing apparatus is further configured to:acquire information on a location of each one of the one or more image forming apparatuses, andwherein the first determination result indicates that the user is located at the first area,select at least one of the one or more image forming apparatuses corresponding to the location of the user, as a first selected image forming apparatus, using ...

SYSTEM, APPARATUS, AND METHOD OF REGISTERING APPARATUS, AND RECORDING MEDIUM

A system includes a first apparatus capable of registering a plurality of apparatuses, and a second apparatus connected to the first apparatus via a network. The second apparatus transmits an inquiry request for inquiring presence of a first apparatus capable of registering on the network to all apparatuses on the network by broadcast, and when information indicating an access destination of the first apparatus is received, transmits a registration request for registering the second apparatus to the first apparatus to the received access destination. 1. A system , comprising:a first apparatus capable of registering a plurality of apparatuses on a memory; anda second apparatus connected to the first apparatus via a network, the first apparatus and the second apparatus each of which being an information processing apparatus, wherein in response to an inquiry request for inquiring presence of a first apparatus capable of registering on the network from the second apparatus, send information indicating that the first apparatus is capable of registering and information indicating an access destination of the first apparatus, and', 'in response to a registration request for registering the second apparatus from the second apparatus, register the second apparatus on the memory, and the second apparatus is configured to,', 'transmit the inquiry request to all apparatuses on the network by broadcast,', 'receive the information indicating the access destination of the first apparatus capable of registering, and', 'transmit the registration request for registering the second apparatus to the first apparatus, to the received access destination of the first apparatus., 'the first apparatus is configured to,'}2. The system of claim 1 , wherein claim 1 , when the first apparatus includes a plurality of first apparatuses claim 1 ,each one of the plurality of first apparatuses further transmits attribute information of the first apparatus to the second apparatus in response to the ...

INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM STORING AN INFORMATION PROCESSING PROGRAM

An information processing system includes an execution request unit that requests one or more multiple preregistered apparatuses to execute an operation, an authority information acquisition unit that acquires authority information that indicates user authority on the preregistered apparatus from at least one of the preregistered apparatuses, an authority management information generator that generates authority management information that indicates the user authority applied to the preregistered apparatuses based on the authority information that the authority information acquisition unit acquires, and a controller that controls whether or not to allow the execution request unit to request to execute the operation based on the authority management information. 1. An information processing system , comprising:an execution request unit to request one or more multiple preregistered apparatuses to execute an operation in accordance with user instruction;an authority information acquisition unit to acquire authority information that indicates user authority on the preregistered apparatus from at least one of the preregistered apparatuses;an authority management information generator to generate authority management information that indicates the user authority applied to the preregistered apparatuses based on the authority information that the authority information acquisition unit acquires; anda controller to control whether or not to allow the execution request unit to request to execute the operation based on the authority management information.2. The information processing system according to claim 1 , further comprising an acquisition unit to acquire claim 1 , for each one of the preregistered apparatuses claim 1 , information on a full powers user authorized to execute all operations that the execution request unit can request to execute from a predetermined storage unit claim 1 ,wherein the controller instructs the execution request unit to request a destination ...

SOUND ABSORBING (ACOUSTIC) BOARD

A sound absorbing board () that is a sound absorbing board where a decorative layer () and a rigid substrate material () are laminated, and where the substrate material contains parallel grooves () spaced at a pre-determined distance, and also, where the cross sectional surface of the grooves in a direction perpendicular to the longitudinal direction of the substrate has a shape that contains mutually adjacent neck parts () and trunk parts () is described. The sound absorbing board has decorative properties and at the same time has sound absorbing, sound isolation properties, and can be easily processed. 1. A sound absorbing board comprising a decorative layer and a rigid substrate material laminated to the decorative layer ,wherein the substrate material contains parallel grooves spaced at a pre-determined distance, and also,wherein the cross sectional surface of the grooves in a direction perpendicular to the longitudinal direction of the substrate has a shape that contains mutually adjacent neck parts and trunk parts.2. The sound absorbing board according to claim 1 , wherein the decorative layer comprises a decorative film layer formed from a plastic film claim 1 , and an adhesive layer laminated to the decorative film layer claim 1 , and further wherein the decorative layer comprises microscopic holes with a diameter in the range of 20 to 500 microns and at a density in the range of 2 to 700 units/cm.3. The sound absorbing board according to claim 1 , wherein the decorative layer is an air permeable nonwoven fabric or woven fabric material.4. The sound absorbing board according to claim 1 , wherein the substrate is formed from resin or ceramic material.5. The sound absorbing board according to wherein the substrate is formed from resin or ceramic material.6. The sound absorbing board according to wherein the substrate is formed from resin or ceramic material. The present invention is an invention about a sound absorbing board.In the past, sound absorbing ...

IMAGE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE MEDIUM STORING IMAGE PROCESSING PROGRAM

An image processing apparatus includes a processor configured to display boundaries each of which encloses a respective one of multiple candidate regions that correspond to foreground objects in an image, detect a single selecting operation, and extract a target region corresponding to one of the foreground objects from one or more candidate regions of the multiple candidate regions. The one or more candidate regions are selected by the single selecting operation. 1. An image processing apparatus comprising: display boundaries each of which encloses a respective one of a plurality of candidate regions that correspond to foreground objects in an image,', 'detect a single selecting operation, and', 'extract a target region corresponding to one of the foreground objects from one or more candidate regions of the plurality of candidate regions, the one or more candidate regions being selected by the single selecting operation., 'a processor configured to'}2. The image processing apparatus according to claim 1 , set one or more seed points for a method of region growing at one or more points determined by using a trace produced by the selecting operation and the boundaries, and', 'clip an image corresponding to a foreground object out of the target region., 'wherein the processor is further configured to'}3. The image processing apparatus according to claim 2 , set the one or more seed points at one or more points corresponding to a background by using the trace and the boundaries, and', 'clip an image corresponding to a foreground object out of the target region by excluding the background from the target region., 'wherein the processor is configured to'}4. The image processing apparatus according to claim 3 , display rectangular boxes as the boundaries,', 'extract the one or more candidate regions enclosed by one or more of the rectangular boxes overlapping the trace, and', 'set the one or more seed points at one or more points included in each side of the rectangular ...

OPERATOR'S CAB AND WORK VEHICLE

An operator's cab includes an operator's seat provided on a floor surface, a control lever that is provided laterally to the operator's seat and is operated at least in a fore/aft direction, and an armrest that includes an upper surface and is provided laterally to the operator's seat in the rear of the control lever. The upper surface includes a forward inclined portion and a rearward inclined portion in the rear of the forward inclined portion. With the floor surface being defined as the reference, the forward inclined portion decreases in height toward a front end of the upper surface in the fore/aft direction. With the floor surface being defined as the reference, the rearward inclined portion decreases in height toward a rear end of the upper surface in the fore/aft direction.

Operator's cab and work vehicle

An operator's cab includes an operator's seat provided on a floor surface, a control lever that is provided laterally to the operator's seat and is operated at least toward the operator's seat, and an armrest that includes an upper surface and is provided laterally to the operator's seat in the rear of the control lever. A front portion of the upper surface is larger in width than a rear portion of the upper surface. The front portion of the upper surface includes an inclined portion. With the floor surface being defined as the reference, the inclined portion decreases in height toward the operator's seat.

IMAGE PROCESSOR AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An image processor including: a color converting unit converting an original image to a brightness image and a chromaticity image; an illumination image generating unit generating, from the brightness image, an illumination image; an image generation processing unit executing a processing for generating a brightness reproduction image which is reproduced so that visibility of the original image is enhanced, based on the brightness image, the illumination image, and an enhancing degree information which represents an enhancing degree of a reflection rate component of the original image, a chromaticity adjustment image generating unit generating a chromaticity adjustment image by adjusting chromaticity of the chromaticity image, and a color reverse converting unit performing a conversion reverse to a color conversion performed by the color converting unit, with respect to the brightness reproduction image and the chromaticity adjustment image. 1. An image processor comprising:a color converting unit that converts an original image to a brightness image in which a brightness component of the original image is set to be a pixel value and a chromaticity image in which a chromaticity component of the original image is set to be a pixel value;an illumination image generating unit that generates, from the brightness image, an illumination image in which an illumination component of the original image is set to be a pixel value;an image generation processing unit that executes a processing for generating a brightness reproduction image which is reproduced so that visibility of the original image is enhanced, based on the brightness image, the illumination image, and an enhancing degree information which represents an enhancing degree of a reflection rate component of the original image,a chromaticity adjustment image generating unit that generates a chromaticity adjustment image by adjusting chromaticity of the chromaticity image, anda color reverse converting unit that ...

IMAGE PROCESSOR AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An image processor includes: an image group generating unit that generates, from an original image, a group of images including at least one smoothed image; an illumination image generating unit that generates an illumination image by use of at least one of the images included in the group of images; a smoothed image acquiring unit that acquires a particular smoothed image based on the at least one smoothed image; a reflection rate image generating unit that generates a reflection rate image based on the original image, the particular smoothed image, a synthesizing degree information which represents a synthesizing degree of the original image and the particular smoothed image, and the illumination image, and a reproduction image generating unit that generates a reproduction image which is reproduced so that visibility of the original image is enhanced, based on at least the reflection rate image and an enhancing degree information. 1. An image processor comprising:an image group generating unit that generates, from an original image, a group of images including at least one smoothed image which is the original image smoothed with at least one smoothing degree;an illumination image generating unit that generates an illumination image in which an illumination component of the original image is set to be a pixel value by use of at least one of the images included in the group of images;a smoothed image acquiring unit that acquires a particular smoothed image which is the original image smoothed with a smoothing degree for suppressing an occurrence of image distortion, based on the at least one smoothed image;a reflection rate image generating unit that generates a reflection rate image in which a reflection rate component of the original image is set to be a pixel value, based on the original image, the particular smoothed image, a synthesizing degree information which represents a synthesizing degree of the original image and the particular smoothed image, and the ...

IMAGE FORMING SYSTEM

An image forming system includes mobile terminals and image forming apparatuses, in which one image forming apparatus receives setting information to be used in order to use the image forming apparatus, the setting information being stored in one mobile terminal and able to be transmitted to another mobile terminal that will use another image forming apparatus based on the setting information. The one image forming apparatus determines whether the setting information is to be changed based on a comparison between the ability of the image forming apparatuses and, when determining that the setting information is to be changed, changes the setting information and send the changed setting information to the other mobile terminal. 1. An image forming system comprising:first and second mobile terminals; andfirst and second image forming apparatuses, a storing unit configured to store setting information to be used to cause the first image forming apparatus to perform a process,', 'a receiving unit configured to receive identification information identifying the second image forming apparatus and a request to acquire the setting information stored in the storing unit from the second mobile terminal, and', 'a first transmission unit configured to transmit the identification information identifying the second image forming apparatus received by the receiving unit and the setting information stored in the storing unit to the first image forming apparatus,, 'wherein the first mobile terminal includes'} an acquisition unit configured to acquire ability information indicating ability of the second image forming apparatus identified based on the identification information transmitted from the first mobile terminal,', 'a first determination unit configured to determine whether the setting information, which is to be transmitted from the first mobile terminal, is to be changed based on a comparison between the ability information indicating the ability of the second image forming ...

METHOD OF PRODUCING AMORPHOUS ALLOY RIBBON

A method of producing an amorphous alloy ribbon. The method includes radiating a laser to an amorphous alloy ribbon, while the amorphous alloy ribbon travels or is travelling, to thereby form laser irradiation marks on the amorphous alloy ribbon. Further, when the amorphous alloy ribbon has a traveling speed of S1 m/sec and the laser has a scanning speed of S2 m/sec, the S1 is 0.1 m/sec or more and 30 m/sec or less, the S2 is 1 m/sec or more and 800 m/sec or less, and S2/S1 is 3.0 or more. 1. A method of producing an amorphous alloy ribbon comprising: radiating a laser to an amorphous alloy ribbon while the amorphous alloy ribbon travels or is travelling , to thereby form laser irradiation marks on the amorphous alloy ribbon , wherein the laser irradiation marks are linear marks formed in a width direction of the amorphous alloy ribbon , and the linear marks are formed in a longitudinal direction of the amorphous alloy ribbon with an interval left , and wherein , when the amorphous alloy ribbon has a traveling speed of 51 m/sec and the laser has a scanning speed of S2 m/sec , the 51 is 0.1 m/sec or more and 30 m/sec or less , the S2 is 1 m/sec or more and 800 m/sec or less , and S2/S1 is 3.0 or more.2. The method of producing an amorphous alloy ribbon according to claim 1 , wherein an angle difference between a scanning direction of the laser and a direction orthogonal to a traveling direction of the amorphous alloy ribbon is 30 degrees or less.3. The method of producing an amorphous alloy ribbon according to claim 1 , wherein a distance from a lens through which the laser is output to a surface of the amorphous alloy ribbon is 200 mm to 1200 mm.4. The method of producing an amorphous alloy ribbon according to claim 1 , wherein the laser uses a CW (continuous wave) oscillation method.5. The method of producing an amorphous alloy ribbon according to claim 4 , wherein the laser using a CW (continuous wave) oscillation method has a laser output energy density of 5 J/m ...

METHOD OF PRODUCING LAMINATED AMORPHOUS ALLOY RIBBON HOLDING SPOOL AND METHOD OF PRODUCING IRON CORE

A method of producing a laminated amorphous alloy ribbon holding spool. The method includes providing amorphous alloy ribbon holding spools, each of which is wound with a single layer amorphous alloy ribbon, unwinding the single layer amorphous alloy ribbon from each of the amorphous alloy ribbon holding spools, making the single layer amorphous alloy ribbon travel with a laser being radiated thereto, to thereby simultaneously prepare single layer amorphous alloy ribbons having laser irradiation mark formed thereon, laminating the single layer amorphous alloy ribbons having the laser irradiation mark formed thereon to, thereby prepare a laminated amorphous alloy ribbon, and winding up the laminated amorphous alloy ribbon on a spool. 1. A method of producing a laminated amorphous alloy ribbon holding spool comprising:providing single layer amorphous alloy ribbon holding spools, each of which is wound with a single layer amorphous alloy ribbon;unwinding the single layer amorphous alloy ribbon from each of the single layer amorphous alloy ribbon holding spools;making the single layer amorphous alloy ribbon travel with a laser being radiated thereto, to thereby simultaneously prepare single layer amorphous alloy ribbons having laser irradiation marks formed thereon;laminating the single layer amorphous alloy ribbons having the laser irradiation marks formed thereon, to thereby prepare a laminated amorphous alloy ribbon; andwinding up the laminated amorphous alloy ribbon on a spool.2. The method of producing a laminated amorphous alloy ribbon holding spool according to claim 1 , wherein when the single layer amorphous alloy ribbon has a traveling speed of 51 m/sec and the laser has a scanning speed of S2 m/sec claim 1 , the S1 is 0.1 m/sec or more and 30 m/sec or less claim 1 , the S2 is 1 m/sec or more and 800 m/sec or less claim 1 , and S2/S1 is 3.0 or more.3. The method of producing a laminated amorphous alloy ribbon holding spool according to claim 1 , wherein an ...

LIQUID CRYSTAL DISPLAY DEVICE

A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate. 1. A liquid crystal display device comprising:a first substrate and a second substrate with a liquid crystal layer therebetween;a plurality of spacers disposed on the first substrate; anda plurality of gate signal lines and a plurality of drain signal lines, the gate signal lines and the drain signal lines being disposed on the second substrate, wherein the plurality of spacers include a first spacer and a second spacer,wherein a projection portion is disposed on the second substrate and counters the first spacer,wherein the first spacer and the second spacer counter the plurality of gate signal lines,wherein the projection portion includes a semiconductor layer disposed on a corresponding one of the gate signal lines, and a metal layer stacked on the semiconductor layer.2. The liquid crystal display device according to claim 1 , wherein the first spacer and the second spacer are substantially equal in height.3. A liquid crystal display device comprising:a first substrate and a second substrate with a liquid crystal layer therebetween;a plurality of gate signal lines and a plurality of drain signal lines, the gate signal lines and the drain signal lines being disposed on the second substrate,a plurality of pixel regions defined by the gate signal lines and the drain signal lines,a plurality of spacers disposed on the first substrate, each of the plurality of spacers countering each of the gate signal lines,a projection portion disposed on the second substrate, the projection portion being arranged on ...

WORK VEHICLE AND ROTATING LIGHT

A hydraulic excavator is a work vehicle equipped with a work implement, including a cab and a rotating light. The rotating light is removably disposed on a roof of the cab. The rotating light has a rotating light main body, an attachment component, and a handle. The attachment component is provided on the lower side of the rotating light main body and is used to attach the rotating light main body to the roof. The handle is portal-shaped and fixed to the attachment component, and has a first rod-shaped part, a second rod-shaped part, and a third rod-shaped part. The first rod-shaped part and the second rod-shaped part are formed facing upward from the attachment component. The third rod-shaped part connects the first rod-shaped part and the second rod-shaped part together. The third rod-shaped part is disposed above the rotating light main body when viewed from the side and perpendicular to the lengthwise direction. 1. A work vehicle equipped with a work implement ,comprising:a cab having a roof provided to the upper part, the cab having a first lateral side face and a second lateral side face;a rotating light removably disposed on the roof of the cab,wherein the rotating light has a rotating light main body;an attachment component provided on the lower side of the rotating light main body to attach the rotating light main body to the roof; anda portal-shaped handle fixed to the attachment component,the handle has a first rod-shaped part and a second rod-shaped part formed facing upward from the attachment component, and a third rod-shaped part that connects the first rod-shaped part and the second rod-shaped part together,the first rod-shaped part is disposed forward of the second rod-shaped part in a lengthwise direction of the work vehicle,the second rod-shaped part is disposed to the rear of the rotating light main body, and is disposed more to the first lateral side face side than the first rod-shaped part, andthe third rod-shaped part is disposed above the ...

Manufacturing Method of Welded Pipe and Manufacturing Device of Welded Pipe

Disclosed is a manufacturing method of a welded pipe, which includes: bending a stainless steel strip while conveying the stainless steel strip in one direction to thereby form a pipe; and welding a butting part of the formed pipe. 1. A manufacturing method of a welded pipe , which comprises: bending a stainless steel strip having a thickness of 0.15 mm or more and 0.45 mm or less while conveying the stainless steel strip in one direction to thereby form a pipe; and welding a butting part of the formed pipe by irradiating the butting part with a laser beam while applying compressive stress to the butting part by using a set of squeeze rolls ,wherein an irradiation position of the laser beam is located on an upstream side in a pipe conveyance direction with respect to a position of a rotation axis of the squeeze roll,a size of a spot diameter of the laser beam at the irradiation position of the laser beam is 0.60 mm or more and 1.2 mm or less, andinert gas is blown from a gas nozzle at the butting part irradiated with the laser beam.2. The manufacturing method of a welded pipe according to claim 1 ,wherein the gas nozzle includes a first gas nozzle and a second gas nozzle having a diameter larger than that of the first gas nozzle, andthe inert gas includes inert gas blown from the first gas nozzle and inert gas blown from the second gas nozzle.3. The manufacturing method of a welded pipe according to claim 2 ,wherein the irradiation position of the laser beam, a position at which the inert gas is blown from the first gas nozzle, and a position at which the inert gas is blown from the second gas nozzle are arranged at the butting part in this order as viewed from the upstream side in the pipe conveyance direction.4. The manufacturing method of a welded pipe according to claim 1 ,wherein a position at which the inert gas is blown on the butting part from the gas nozzle is located within an area from the irradiation position of the laser beam to the position of the ...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER-READABLE MEDIUM

An image processing apparatus includes an accepting unit, a calculation unit, a coefficient setting unit, and a processor. The accepting unit accepts a set of feeling expressions representing texture factors. The calculation unit calculates posterior probabilities which are event probabilities for events by using likelihoods and prior probabilities. The event probabilities correspond to the set of feeling expressions. The likelihoods indicate probabilities that each of the feeling expressions is selected for an event selected from the events. The prior probabilities indicate probabilities that each of the events is selected. The coefficient setting unit sets coefficients for image processing from the posterior probabilities. The processor performs processing on a given image in accordance with the coefficients which have been set. 1. An image processing apparatus comprising:an accepting unit that accepts a set of feeling expressions representing texture factors;a calculation unit that calculates posterior probabilities which are event probabilities for events by using likelihoods and prior probabilities, the event probabilities corresponding to the set of feeling expressions, the likelihoods indicating probabilities that each of the feeling expressions is selected for an event selected from the events, the prior probabilities indicating probabilities that each of the events is selected;a coefficient setting unit that sets coefficients for image processing from the posterior probabilities; anda processor that performs processing on a given image in accordance with the coefficients which have been set.2. The image processing apparatus according to claim 1 ,wherein the events are processing modes for an image, andwherein the coefficient setting unit specifies any one of the processing modes from the posterior probabilities for the processing modes, and sets coefficients for image processing corresponding to the specified processing mode.3. The image processing ...

CHARGING AND DISCHARGING CIRCUIT, CAPACITOR UNIT, AND ELECTROSCOPE

A charging and discharging circuit charges an input electric current to a plurality of capacitors and discharges output electric current from the plurality of capacitors. The charging and discharging circuit comprises change-over switches which are switchable to a series electric current state, which electric current flows to the plurality of the capacitors in series, and a parallel electric current state, which electric current flows to the plurality of the capacitors in parallel, and a discharge switch which starts discharging of the output electric current from the plurality of capacitors. A capacitor unit comprises a pair of electrodes. The electrodes of the pair of the capacitor units comprise a body part being almost parallel mutually, at least the one of the pair of electrodes comprise a non-parallel part which stands toward the other electrode side on the end of the body part, and is not almost parallel to the other electrode. 1. A charging and discharging circuit characterized by the following;the charging and discharging circuit charges input electric current to a plurality of capacitors, the charging and discharging circuit discharges output electric current from the plurality of the capacitors;the charging and discharging circuit comprises change-over switches which are switchable to a series electric current state, which electric current can be made to flow to the plurality of the capacitors in series, and a parallel electric current state, which electric current can be made to flow to the plurality of the capacitors in parallel;the charging and discharging circuit comprises, apart from the change-over switches, a discharge switch which starts a discharging of the output electric current from the plurality of the capacitors too.2. The charging and discharging circuit as claimed in claim 1 , characterized by the following;the charging and discharging circuit comprises a series wiring which connects to the plurality of the capacitors in series;the ...

Controller assembly and work vehicle

A controller assembly is mounted on a side wall surface extending in an upward/downward direction of a hydraulic excavator. The controller assembly includes a controller main body, a first bracket, a second bracket, and a vibration suppressing member. The first bracket is mounted on the side wall surface described above. The second bracket is fixed to the controller main body. The vibration suppressing member supports the first bracket at one end in the upward/downward direction, and supports the second bracket at the other end in the upward/downward direction so as to be movable with respect to the first bracket.

Liquid Crystal Display Device

A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate. 1. A liquid crystal display device comprising:a first substrate and a second substrate with a liquid crystal layer therebetween;a plurality of gate signal lines and a plurality of drain signal lines, the gate signal lines and the drain signal lines being formed on the second substrate,a plurality of pixel regions defined by the gate signal lines and the drain signal lines,a plurality of counter voltage signal lines are arranged in parallel with the gate signal lines,a plurality of spacers formed on the first substrate, the respective spacers being arranged in a position which counters the respective gate signal lines defining a corresponding pixel region,a plurality of projection portions formed on the second substrate, the respective projection portions being arranged on the gate signal line defining a corresponding pixel region, each projection portion formed by at least a semiconductor layer and a conductive layer, the conductive layer being formed over the semiconductor layer,wherein the plurality of spacers include at least one of first spacer and at least one of second spacer, a region of the at least one of the first spacer formed corresponds to a region of the respective projection portions formed in a plane view, and a region of the at least one of the second spacer formed does not correspond the region of the respective projection portions formed in a plane view.2. A liquid crystal display device according to claim 1 , wherein the plurality of spacers are columnar spacers.3. A liquid crystal ...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM

An image processing apparatus includes a separating unit, an analyzing unit, a determining unit, and an image correcting unit. The separating unit separates a color image into a foreground image and a background image. The analyzing unit analyzes the foreground image and the background image to acquire a foreground attribute value and a background attribute value. The determining unit determines an image processing coefficient, based on the foreground attribute value and the background attribute value. The image correcting unit corrects the color image, in accordance with the image processing coefficient. 1. An image processing apparatus comprising:a separating unit that separates a color image into a foreground image and a background image;an analyzing unit that analyzes the foreground image and the background image to acquire a foreground attribute value and a background attribute value;a determining unit that determines an image processing coefficient, based on the foreground attribute value and the background attribute value; andan image correcting unit that corrects the color image, in accordance with the image processing coefficient.2. An image processing apparatus comprising:a separating unit that separates a color image into one or more foreground images and a background image;an analyzing unit that analyzes the one or more foreground images and the background image to acquire one or more foreground attribute values and a background attribute value;a determining unit that determines, in accordance with the one or more foreground attribute values and the background attribute value, foreground coefficients, which are image processing coefficients corresponding to the one or more foreground images, and a background coefficient, which is an image processing coefficient corresponding to the background image; andan image correcting unit that corrects the one or more foreground images in accordance with the one or more corresponding foreground coefficients, ...

FILM CAPACITOR

A film capacitor includes: two adjacent capacitor elements, each of which has end-face electrodes at two end faces, respectively, and an insulating film at a lateral surface, each of the adjacent capacitor elements having dielectric films and metal layers that are alternately disposed; and a bus bar for connecting the end-face electrodes of the adjacent capacitor elements on one side. The lateral surfaces of the adjacent capacitor elements are disposed to be opposite to each other. The bus bar includes a tongue piece. The tongue piece is disposed between the lateral surfaces of the adjacent capacitor elements. With this arrangement, the film capacitor can dissipate heat generated during charging and discharging and thus have improved heat-dissipating performance. 1. A film capacitor comprising:two adjacent capacitor elements, each of the adjacent capacitor elements having end-face electrodes at two end faces, respectively, and an insulating film at a lateral surface, each of the adjacent capacitor elements having dielectric films and metal layers that are alternately disposed; anda bus bar for connecting the end-face electrodes of the adjacent capacitor elements on one side, whereinthe lateral surfaces of the adjacent capacitor elements are disposed to be opposite to each other,the bus bar includes a tongue piece, andthe tongue piece is disposed between the lateral surfaces of the adjacent capacitor elements.2. The film capacitor according to claim 1 , wherein the tongue piece is a bent part where the bus bar is partially bent.3. The film capacitor according to claim 1 , whereinone of the two end faces is formed with a positive metallikon electrode, while another of the two end faces is formed with a negative metallikon electrode,the positive metallikon electrode is connected to a positive-electrode bus bar, while the negative metallikon electrode is connected to a negative-electrode bus bar, andthe tongue piece of the positive-electrode bus bar and the tongue piece ...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a silicon carbide single-crystal substrate includes the following steps. A seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material are prepared. A silicon carbide single crystal is grown on the main surface by sublimating the silicon carbide source material while maintaining a temperature gradient between any two points in the silicon carbide source material at 30° C./cm or less. The main surface of the seed crystal is a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, and the main surface has a screw dislocation density of 20/cmor more. Thus, a silicon carbide single-crystal substrate capable of achieving improved crystal quality and a method of manufacturing the same are provided. 1. A method of manufacturing a silicon carbide single-crystal substrate , comprising the steps of:preparing a seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material; andgrowing a silicon carbide single crystal on said main surface by sublimating said silicon carbide source material while maintaining a temperature gradient between any two points in said silicon carbide source material at 30° C./cm or less,{'sup': '2', 'said main surface of said seed crystal being a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, said main surface having a screw dislocation density of 20/cmor more.'}2. The method of manufacturing a silicon carbide single-crystal substrate according to claim 1 , wherein{'sup': '2', 'said main surface has a screw dislocation density of 100000/cmor less.'}3. The method of manufacturing a silicon carbide single-crystal substrate according to claim 1 , whereinin said step of growing a silicon carbide single crystal, a temperature gradient between a surface of said silicon carbide source material and a growth surface of said silicon carbide single crystal facing said ...

COMMUNICATION TERMINAL AND WARNING INFORMATION OBTAINING METHOD

A communication terminal includes a first receiving unit configured to receive communication signals in a first communication system, a second receiving unit configured to receive communication signals in a second communication system, a monitoring mode selection unit configured to select a monitoring mode from a plurality of the monitoring modes with different cycles for activating the second receiving unit, an activation control unit configured to activate the second receiving unit according to the monitoring mode selected by the monitoring mode selection unit in the case where the first receiving unit receives communication signals including first warning information, and an interface unit configured to provide second warning information extracted from communication signals received by the second receiving unit. 1. A communication terminal comprising:a first receiving unit configured to receive communication signals in a first communication system,a second receiving unit configured to receive communication signals in a second communication system,a monitoring mode selection unit configured to select a monitoring mode from a plurality of the monitoring modes with different cycles for activating the second receiving unit,an activation control unit configured to activate the second receiving unit according to the monitoring mode selected by the monitoring mode selection unit in the case where the first receiving unit receives communication signals including first warning information, andan interface unit configured to provide a user with second warning information extracted from communication signals received by the second receiving unit.2. The communication terminal as claimed in claim 1 , wherein the monitoring mode selection unit claim 1 , as the quality of communication signals received by the first receiving unit becomes better claim 1 , selects a monitoring mode with a longer cycle for activating the second receiving unit.3. The communication terminal as ...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING SYSTEM, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An image processing apparatus includes a region detection unit, an image processing unit, and an image composing unit. The region detection unit detects a specified region from an original image. The image processing unit deforms a shape of a sample image that is an image serving as a sample in accordance with a shape of the specified region and deforms a texture of the sample image so as to express a depth corresponding to the specified region. The image composing unit overlays the deformed sample image on the specified region of the original image. 1. An image processing apparatus comprising:a region detection unit that detects a specified region from an original image;an image processing unit that deforms a shape of a sample image that is an image serving as a sample in accordance with a shape of the specified region and deforms a texture of the sample image so as to express a depth corresponding to the specified region; andan image composing unit that overlays the deformed sample image on the specified region of the original image.2. The image processing apparatus according to claim 1 , wherein the image processing unit deforms the shape and texture of the sample image by performing an affine transformation or a projective transformation on coordinates of pixels of the sample image.3. The image processing apparatus according to claim 1 , wherein the image processing unit generates a larger sample image by performing quilting on sample images each of which is equivalent to the sample image.4. The image processing apparatus according to claim 2 , wherein the image processing unit generates a larger sample image by performing quilting on sample images each of which is equivalent to the sample image.5. The image processing apparatus according to claim 1 , wherein the image processing unit sets a reference rectangle serving as a reference for deformation of the sample image claim 1 , and determines claim 1 , in accordance with a degree to which a user deforms the ...

MOBILE COMMUNICATION TERMINAL, MOBILE COMMUNICATION METHOD, MOBILE COMMUNICATION PROGRAM, AND RECORDING MEDIUM

A mobile communication terminal for receiving broadcasting waves of television broadcasting, the mobile communication terminal including a graph displaying unit configured to display a graph that has at least an axis of an azimuth direction in which the mobile communication terminal is facing and an axis of a reception level of the broadcasting waves at the azimuth direction and that shows the reception level currently being detected and the reception level detected in the past such that the reception level currently being detected is plotted in the central part of a screen of the mobile communication terminal, and a graph updating unit configured to update the graph according to a change of the azimuth direction in which the mobile communication terminal is facing or according to a change of the reception level. 1. A mobile communication terminal for receiving broadcasting waves of television broadcasting , the mobile communication terminal comprising:an azimuth direction obtaining unit configured to obtain an azimuth direction in which the mobile communication terminal is facing,a reception level detecting unit configured to detect a reception level of the broadcasting waves at the azimuth direction,a log retaining unit configured to retain as log information the reception level associated with the azimuth direction,a graph displaying unit configured to display a graph that has at least an axis of the azimuth direction and an axis of the reception level and that shows the reception level currently being detected and the reception level detected in the past in such a way that the reception level currently being detected is plotted in the central part of a screen of the mobile communication terminal, anda graph updating unit configured to update the graph according to a change of the azimuth direction in which the mobile communication terminal is facing or according to a change of the reception level.2. The mobile communication terminal as claimed in claim 1 , ...

WORK MACHINE AND CAB

The cab includes a front pillar on the first side face and a front pillar disposed on the second side face and located behind the front pillar. The cab includes a front transparent member located between the first side face and the second side face and a lateral transparent member provided the second side face and connected to the front pillar. The cab includes a roller disposed on the front transparent member and a bracket disposed on the lateral transparent member and provided with a rail member to guide the roller. 1. A work machine comprising:a cab which has a first side face and a second side face facing the first side face and located closer to a work implement than the first side face; a first side-face front pillar disposed on the first side face;', 'a second side-face front pillar disposed on the second side face and located behind the first side-face front pillar;', 'a front transparent member located between the first side face and the second side face;', 'a lateral transparent member disposed on the second side face and connected to the second side-face front pillar;', 'a roller disposed on the front transparent member; and', 'a bracket disposed on the lateral transparent member and provided with a rail member to guide the roller., 'the cab including2. The work machine according to claim 1 , whereinthe length of the bracket in a front-rear direction is smaller than the length of the first side-face front pillar in the front-rear direction.3. The work machine according to claim 1 , whereinthe width of the bracket in a left-right direction is smaller than the width of the first side-face front pillar in the left-right direction.4. The work machine according to claim 1 , whereinthe bracket is detachably attached to a cab frame including the first side-face front pillar and the second side-face front pillar.5. The work machine according to claim 1 , whereinthe roller slides in a groove of the rail member, andeach of the roller and the groove has a tapered ...

INFORMATION PROCESSING APPARATUS AND RECORDING MEDIUM

There is provided an information processing apparatus including a function search section which searches for a function capable of being executed for specified content, from a function group including a function capable of being executed in the case where content has a specific attribute or detail, a display control section which causes content icons showing the content to be displayed on a display section, and in the case where one of the content icons is selected by a user, the display control section causes a function icon group corresponding to the function group to be displayed in a first region on the display section, and causes a function icon to be enabled and displayed, from among the function icon group, which corresponds to a function capable of being executed for content corresponding to the selected content icon, and a function execution control section which causes a function to be executed which corresponds to the function icon for content corresponding to the selected content icon in accordance with a position relation between the selected content icon and the enabled and displayed function icon on the display section. 1. An information processing apparatus comprising:a function search section which searches for a function capable of being executed for specified content, from a function group including a function capable of being executed in the case where content has a specific attribute or detail;a display control section which causes content icons showing the content to be displayed on a display section, and in the case where one of the content icons is selected by a user, the display control section causes a function icon group corresponding to the function group to be displayed in a first region on the display section, and causes a function icon to be enabled and displayed, from among the function icon group, which corresponds to a function capable of being executed for content corresponding to the selected content icon; anda function execution ...

ELECTROCONDUCTIVE RUBBER SHEET AND METHOD FOR PRODUCING ELECTROCONDUCTIVE RUBBER SHEET

An electroconductive rubber sheet includes a sheet-shaped rubber base material having electrical conductivity and an electroconductive sheet embedded in the rubber base material. This electroconductive rubber sheet can be obtained according to a method for producing an electroconductive rubber sheet that includes, for example, a step of placing an electroconductive sheet and a sheet-shaped rubber material, which has electrical conductivity and an opening in a central portion of the sheet-shaped rubber material, on a mold and a step of pressing the electroconductive sheet and the rubber material at a temperature at which the rubber material is softened. 1. An electroconductive rubber sheet comprising:a sheet-shaped rubber base material having electrical conductivity; andan electroconductive sheet embedded in the rubber base material.2. The electroconductive rubber sheet according to claim 1 , wherein the electroconductive sheet includes an electroconductive mesh.3. The electroconductive rubber sheet according to claim 1 , wherein the rubber base material includes a terminal that is formed at a peripheral edge portion of the rubber base material and that is used for an electrical connection between the rubber base material and an outside claim 1 , andthe electroconductive sheet is embedded in the rubber base material such that the electroconductive sheet overlaps the terminal.4. A method for producing an electroconductive rubber sheet claim 1 , the method comprising:a step of placing an electroconductive sheet and a sheet-shaped rubber material on a mold, the sheet-shaped rubber material having electrical conductivity and an opening in a central portion of the sheet-shaped rubber material; anda step of pressing the electroconductive sheet and the rubber material at a temperature at which the rubber material is softened.5. The method for producing an electroconductive rubber sheet according to claim 4 , wherein the electroconductive sheet has an opening.6. The method ...

ANTI-SLIP SHEET TO BE USED AROUND WATER

An anti-slip sheet to be used around water can be easily fixed onto the floor or bathtubs, etc., by simply adhering. The sheet resists curling (coiling) or separation, has low surface irritation on skin, and even under humid environment has excellent anti-slip properties. The anti-slip sheet includes a resin film having a Shore A hardness of 60 or higher and 82 or lower, a protrusion and indentation surface where the maximum value of the adjacent protrusions peaks are within the range of 10 microns or higher and 150 microns or lower, has a maximum height Rmax of the surface roughness within the range of 15 microns or higher and 90 microns or lower, and includes a top part reinforcing film positioned on the resin film on the side opposite to the protrusions and indentations containing surface which is harder than the resin film, and includes a bottom part adhesive layer positioned on the side of the top part reinforcing film that is opposite to the resin film 1. Anti-slip sheet to be used around water , which hasa resin film that has a Shore A hardness that is 60 or higher and 82 or lower,and that has a protrusion and indentation surface where the maximum value of the adjacent protrusions peaks within the range of 10 microns or higher and 150 microns or lower,and also, which has a maximum height Rmax of the surface roughness is within the range of 15 microns or higher and 90 microns or lower,a positioned on the resin film on the side opposite to the protrusions and indentations containing surface, first reinforcing film, which is harder than the resin film, anda positioned on the side of the first reinforcing film that is opposite to the resin film, adhesive agent layer.2. Anti-slip sheet to be used around water reported according to the claim 1 , where the above described first reinforcing film is an elastomer that has a Shore hardness A of at least 90 or higher.3. Anti-slip sheet to be used around water reported according to claim 1 , where in the space between the ...

Guard-equipped cab for work vehicle and hydraulic excavator

Provided is a guard-equipped cab for a work vehicle in which contact between a work implement and a member for coupling an operator protective guard to a cab can be avoided. A front guard is coupled by hinges to be openable/closable with respect to a cab for a work vehicle. A hinge has a shaft portion, a first plate member, and a second plate member. The first plate member is fixed with respect to a right front pillar. The second plate member is fixed with respect to the front guard. The first plate member has a support portion supporting the shaft portion, and extends from the support portion toward a left surface of the cab for the work vehicle.

WORK VEHICLE AND OPERATOR PROTECTIVE GUARD

Provided is a work vehicle capable of expanding a field of vision from inside a cab equipped with an operator protective guard. A front guard provided on a front side of a cab has a frame constituting an outer edge of the front guard. The frame is formed by framing an upper frame, a lower frame, a right vertical frame, and a left vertical frame. The right vertical frame has a vertical frame bent portion, and extends rearward toward the cab as it comes close to the lower frame from the vertical frame bent portion. 2. The work vehicle according to claim 1 , wherein said upper frame is formed of a plate material.3. The work vehicle according to claim 2 , wherein said upper frame includes widened portions at both ends claim 2 , and includes a narrowed portion narrower than said widened portions at a central portion.4. The work vehicle according to claim 2 , wherein said lower frame claim 2 , said right vertical frame claim 2 , and said left vertical frame are formed of a pipe.5. (canceled)6. The work vehicle according to claim 1 , whereinsaid mounting portions each include a hinge structure, andsaid operator protective guard relatively rotates with respect to said cab, about said hinge structures.7. The work vehicle according to claim 1 , wherein said lower frame includes a lower frame bent portion claim 1 , and extends rearward toward said cab as said lower frame comes close to said one vertical frame from said lower frame bent portion.8. An operator protective guard provided on a front side of a cab of a work machine claim 1 , comprising:a frame body constituting an outer edge of said operator protective guard, an upper frame formed of a plate material,', 'a lower frame formed of a pipe, and', 'a right vertical frame and a left vertical frame which are formed of a pipe and at least one of which includes a vertical frame bent portion,, 'said frame body including'}one of said right vertical frame and said left vertical frame including said vertical frame bent portion is ...

WORK VEHICLE

A work vehicle includes a cab, a body frame and a restrictor. The body flame includes a base component, and a support frame provided on an upper side of the base component. The support frame supports the cab. The restrictor is provided to a floor frame of the cab. The restrictor is disposed between the base component and the floor frame. The restrictor includes a retaining member disposed on a lower side of the support frame, and an impact absorber disposed on a cab side of the retaining member. 1. A work vehicle , comprising:a cab;a body frame including a base component, and a support frame provided on an upper side of the base component, the support frame supporting the cab; and a retaining member disposed on a lower side of the support frame, and', 'an impact absorber disposed on a cab side of the retaining member., 'a restrictor provided to a floor frame of the cab, the restrictor being disposed between the base component and the floor frame, the restrictor including'}2. The work vehicle according to claim 1 , further comprisinga damper provided to the body frame, the damper supporting the cab, and the damper being configured to damp vibrations occurring in the cab.3. The work vehicle according to claim 1 , further comprisinga work implement disposed on the body frame, the restrictor being provided on an opposite side from the work implement.4. The work vehicle according to claim 3 , wherein a first cab frame formed in an up and down direction on a side face of an opposite side of the cab from a side on which the work implement is disposed, and', 'a second cab frame formed in the up and down direction on the side face of the opposite side of the cab from the side on which the work implement is disposed, the second cab frame being lower in stiffness than the first cab frame,, 'the cab includes'}the restrictor is provided in a vicinity below the first cab frame and in a vicinity below the second cab frame, anda coefficient of elasticity of the impact absorber of ...