CIRCUIT BREAKER OF MULTIPOLAR POWER HIGH VOLTAGE

SOLUTION AND PROCEEDED Of ACTIVATION OF the SURFACE Of a SEMICONDUCTOR SUBSTRATE

La présente invention a pour objet une solution et un procédé d'activation de la surface d'un substrat comportant au moins une zone constituée d'un polymère, en vue de son recouvrement ultérieur par une couche métallique déposée par voie electroless. Selon l'invention, cette composition contient : A) un activateur constitué d'un ou plusieurs complexes de palladium ; B) un liant constitué d'un ou plusieurs composés organiques choisis parmi les composés comportant au moins deux fonctions glycidyle et au moins deux fonctions isocyanate ; C) un système solvant constitué d'un ou plusieurs solvants aptes à solubiliser ledit activateur et ledit liant. Application : Fabrication de dispositifs électroniques tels, qu'en particulier, des circuits intégrés notamment en trois dimensions. The subject of the present invention is a solution and a method of activating the surface of a substrate comprising at least one zone made of a polymer, with a view to its subsequent recovery by an electroless deposited metal layer. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes; B) a binder consisting of one or more organic compounds selected from compounds having at least two glycidyl functions and at least two isocyanate functions; C) a solvent system consisting of one or more solvents capable of solubilizing said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits including three-dimensional.

METHOD OF FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUORINE IONS

L'invention a pour objet un procédé formation de siliciure de nickel ou de siliciure de cobalt comprenant les étapes consistant à : - exposer la surface d'un substrat comprenant du silicium avec une solution aqueuse contenant 0.1 mM à 10 mM d'ions or et 0.6 M à 3.0 M d'ions fluor pendant une durée comprise entre 5 secondes et 5 minutes, - déposer par voie electroless sur le substrat activé une couche constituée essentiellement de nickel ou de cobalt, - appliquer un traitement thermique rapide à une température comprise entre 300°C et 750°C, de manière à former le siliciure de nickel ou le siliciure de cobalt. Ce procédé trouve essentiellement application dans la fabrication de mémoires NAND et de cellules photovoltaïques. The invention relates to a process for forming nickel silicide or cobalt silicide comprising the steps of: exposing the surface of a substrate comprising silicon with an aqueous solution containing 0.1 mM to 10 mM of gold ions and 0.6 M to 3.0 M fluorine ions for a period of between 5 seconds and 5 minutes, - deposit electroless on the activated substrate a layer consisting essentially of nickel or cobalt, - apply a rapid heat treatment at a temperature between 300 ° C and 750 ° C, so as to form nickel silicide or cobalt silicide. This process is mainly used in the manufacture of NAND memories and photovoltaic cells.

ELECTROLYTE AND COPPER ELECTROPLATING METHOD ON A BARRIER LAYER

La présente invention a pour objet une composition d'électrolyte pour le dépôt de cuivre sur des substrats semi-conducteurs recouverts d'une couche barrière. Cet électrolyte contient la combinaison d'imidazole et de 2,2'-bipyridine, utilisée comme suppresseur, et de l'acide thiodiglycolique, utilisé comme accélérateur. La combinaison de ces additifs permet d'obtenir un remplissage bottom-up sur des tranchées de très faible largeur, typiquement inférieure à 100 nm. The present invention relates to an electrolyte composition for the deposition of copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2'-bipyridine, used as a suppressor, and thiodiglycolic acid, used as an accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically less than 100 nm.

PLANT AND METHOD FOR USE OF A CRYOGEN GAS

A METHOD FOR CONTACTING A SEMICONDUCTOR SUBSTRATE WITH COPPER USING A COBALT SILICIDE OR NICKEL

L'invention a pour objet un procédé de métallisation au cuivre qui utilise un siliciure particulier pour augmenter l'adhésion du dépôt de cuivre sur un substrat semi-conducteur . Dans une application microélectronique, ce procédé présente l'avantage de pouvoir être mis en œuvre pour la fabrication de circuits intégrés en trois dimensions par la technique dite via-last. En effet, cette technologie est limitée en température. Dans une application photovoltaïque, le procédé de l'invention permet de réaliser un empilement siliciure/nickel en une étape avec un budget thermique inférieur. Le procédé de l'invention comprend une étape consistant à appliquer un traitement thermique rapide à un substrat recouvert de nickel ; de manière à former entre la couche de nickel et la couche de silicium, une couche intercalaire qui constitue un promoteur d'adhésion entre le substrat et le cuivre et qui comprend un siliciure de stœchiométrie SiM2, M représentant le nickel, ledit siliciure étant formé par diffusion d'une partie du nickel dans le silicium de manière à laisser une couche de nickel résiduel en surface, le traitement thermique étant réalisé à une température inférieure à 350°C et pendant une durée inférieure à 30 minutes. The subject of the invention is a copper metallization process which uses a particular silicide to increase the adhesion of the copper deposit on a semiconductor substrate. In a microelectronic application, this method has the advantage of being implemented for the manufacture of integrated circuits in three dimensions by the so-called via-last technique. Indeed, this technology is limited in temperature. In a photovoltaic application, the method of the invention makes it possible to produce a silicide / nickel stack in one step with a lower thermal budget. The method of the invention comprises a step of applying a rapid heat treatment to a nickel coated substrate; so as to form between the nickel layer and the silicon layer, a ...

ELECTROLYTE AND METHOD FOR ELECTRODEPOSITION OF COPPER ON A BARRIER LAYER

SOLUTION AND PROCEEDED Of ACTIVATION OF SURFACE OXYDEE Of a SEMICONDUCTOR SUBSTRATE.

MODULATE CRUCIFORM SHIELDING FOR AN INSTALLATION OF COMMUTATION HAS BLINDAGETRIPHASEE

PROCESS OF DEPOSIT OF METAL LAYERS CONTAINING NICKEL OR COBALT ON A SEMICONDUCTOR SOLID SUBSTRATE; KIT FOR THE IMPLEMENTATION OF THIS PROCESS

La présente invention a pour objet un kit destiné au dépôt de nickel ou de cobalt dans les cavités d'un substrat semi-conducteur tels que des vias traversants (TSV) pour la réalisation d'interconnections dans des circuits intégrés en trois dimensions. L'invention a également pour objet un procédé de métallisation de la surface isolante d'un tel substrat qui comprend la mise en contact de la surface avec une solution aqueuse liquide contenant : - au moins un sel métallique du nickel ou du cobalt ; - au moins un agent réducteur ; - au moins un polymère doté de fonctions amines, et - au moins un agent stabilisant des ions métalliques; L'indice de conformalité de la couche de nickel ou de cobalt obtenue peut être supérieur à 75%, ce qui facilite le remplissage ultérieur des vias avec du cuivre par électrodéposition.

SWITCHBOARD FOR an INSTALLATION ISOLEE WITH GAS COMPRISING HORIZONTAL DESDISJONCTEURS AND a DOUBLE GAME OF BARS HAS THREE-PHASE SHIELDING DISPOSESUR a DIMENSION Of a WAY OF VERTICAL CURRENT

CONNECTION FOR FLUID LINES.

L'invention concerne un raccord par emboîtement (1) pour des conduites de fluides, constitué d'une partie d'accouplement (2) emboîtable avec une partie d'accouplement complémentaire (4) dans la direction d'un axe d'emboîtement (X) et dotée d'un système de verrouillage (12) servant à bloquer de manière amovible la partie d'accouplement (2) dans sa position d'accouplement. Un élément de maintien (14) de type pince déformable radialement élastiquement est maintenu à l'extérieur sur la partie d'accouplement (2) de manière à entourer au moins en partie cette dernière dans le sens de la périphérie. L'élément de maintien (14) coopère, lorsqu'il se trouve sur la partie d'accouplement (2), avec cette dernière par l'intermédiaire de moyens de fixation de telle manière qu'il peut être orienté au choix dans diverses positions de rotation relatives et qu'il est fixé de manière à empêcher tout pivotement libre autour de l'axe d'emboîtement (X) par rapport à la partie d'accouplement (2).

SOLUTION AND PROCEEDED Of ACTIVATION OF the SURFACE Of a SEMICONDUCTOR SUBSTRATE

La présente invention a pour objet une solution et un procédé d'activation de la surface d'un substrat comportant au moins une zone constituée d'un polymère, en vue de son recouvrement ultérieur par une couche métallique déposée par voie electroless. Selon l'invention, cette composition contient : A) un activateur constitué d'un ou plusieurs complexes de palladium ; B) un liant constitué d'un ou plusieurs composés organiques choisis parmi les composés comportant au moins deux fonctions glycidyle et au moins deux fonctions isocyanate ; C) un système solvant constitué d'un ou plusieurs solvants aptes à solubiliser ledit activateur et ledit liant. Application : Fabrication de dispositifs électroniques tels, qu'en particulier, des circuits intégrés notamment en trois dimensions. The subject of the present invention is a solution and a method of activating the surface of a substrate comprising at least one zone made of a polymer, with a view to its subsequent recovery by an electroless deposited metal layer. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes; B) a binder consisting of one or more organic compounds selected from compounds having at least two glycidyl functions and at least two isocyanate functions; C) a solvent system consisting of one or more solvents capable of solubilizing said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits including three-dimensional.

SECTION OF SHIELDING, PROVIDED With a SHIM ELEMENT, an INSTALLATION HAUTETENSION AND an INSTALLATION OF CUT HIGH VOLTAGE ISOLEE BY GAS AND HAVING UNESECTION OF SHIELDING OF THIS KIND

SOLUTION AND PROCEEDED Of ACTIVATION OF the SURFACE Of a SEMICONDUCTOR SUBSTRATE

CONNECTION BY ASSEMBLING FOR WIRE OF PHASE Of an INSTALLATION OF DISTRIBUTIONHAUTE TENSION BLINDEE

SOLUTION AND METHOD OF ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE

SOLUTION AND PROCEEDED Of ACTIVATION OF SURFACE OXYDEE Of a SEMICONDUCTOR SUBSTRATE

INSTALLATION AND PROCEEDED Of USE Of a CRYOGENIC GAS

Installation de compression d'un gaz cryogénique (4) notamment d'un gaz d'hydrocarbures comprenant un compresseur (7) pour comprimer le gaz (4) et une conduite (5) fournissant le gaz (4) au côté aspiration (6) du compresseur (7) et le gaz (4) comprimé a une installation en aval pour être utilisé. La conduite (5) comporte une dérivation (9) par laquelle on renvoie le gaz comprimé (4) au côté aspiration (6) du compresseur (7). La dérivation (9) est équipée d'un expanseur (12) pour refroidir le gaz (4) qui passe par la dérivation (9). L'objet de l'invention concerne également un procédé de régulation d'une installation de compression d'un gaz cryogénique (4) notamment du gaz d'hydrocarbures produit par le stockage d'un liquide cryogénique.

SOLUTION AND PROCEEDED Of ACTIVATION OF SURFACE OXYDEE Of a SEMICONDUCTOR SUBSTRATE.

La présente invention a pour objet une solution et un procédé d'activation de la surface oxydée d'un substrat, en particulier d'un substrat semi-conducteur, en vue de son recouvrement ultérieur par une couche métallique déposée par voie electroless. Selon l'invention, cette composition contient : A) un activateur constitué d'un ou plusieurs complexe(s) de palladium ; B) un liant organique bifonctionnel constitué d'un ou plusieurs composé(s) organosilane ; C) un système solvant constitué d'un ou plusieurs solvant(s) apte(s) à solubiliser ledit activateur et ledit liant. Application : Fabrication de dispositif électronique tel qu'en particulier des circuits intégrés notamment en trois dimensions.

METHOD OF FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUORINE IONS

METHOD OF ETCHING THE SILICON DIOXIDE

La présente invention concerne un procédé de gravure chimique d'un matériau de dioxyde de silicium, tel que le quartz, qui met en œuvre des ions fluorure et un polymère fluoré. Ce procédé de gravure peut être utilisé notamment dans la fabrication d'oscillateurs à quartz destinés à être intégrés dans toutes sortes d'appareils électroniques tels que des appareils d'horlogerie, des gyroscopes ou des pacemakers. The present invention relates to a process for the chemical etching of a silicon dioxide material, such as quartz, which uses fluoride ions and a fluorinated polymer. This etching process can be used in particular in the manufacture of quartz oscillators intended to be integrated in all kinds of electronic devices such as timepieces, gyroscopes or pacemakers.

SOLUTION AND PROCEEDED Of ACTIVATION OF SURFACE OXYDEE Of a SEMICONDUCTOR SUBSTRATE

La présente invention a pour objet une solution et un procédé d'activation de la surface oxydée d'un substrat, en particulier d'un substrat semi-conducteur, en vue de son recouvrement ultérieur par une couche métallique déposée par voie electroless. Selon l'invention, cette composition contient : A) un activateur constitué d'un ou plusieurs complexe(s) de palladium ; B) un liant organique bifonctionnel constitué d'un ou plusieurs composé(s) organosilane ; C) un système solvant constitué d'un ou plusieurs solvant(s) apte(s) à solubiliser ledit activateur et ledit liant. Application : Fabrication de dispositif électronique tel qu'en particulier des circuits intégrés notamment en trois dimensions. The subject of the present invention is a solution and a method for activating the oxidized surface of a substrate, in particular a semiconductor substrate, with a view to subsequently covering it with an electroless deposited metal layer. According to the invention, this composition contains: A) an activator consisting of one or more complex (s) of palladium; B) a bifunctional organic binder consisting of one or more organosilane compound (s); C) a solvent system consisting of one or more solvent (s) capable (s) to solubilize said activator and said binder. Application: Manufacture of electronic devices such as in particular integrated circuits including three-dimensional.

PROCESS OF DEPOSIT OF METAL LAYERS CONTAINING NICKEL OR COBALT ON A SEMICONDUCTOR SOLID SUBSTRATE; KIT FOR THE IMPLEMENTATION OF THIS PROCESS

METHOD OF GRAFTING POLYMER THIN FILM ON SUBSTRATE AND METHOD FOR METALLIZING THE THIN FILM

La présente invention a pour objet un procédé non électrochimique de greffage, par voie radicalaire, d'un polymère sur un substrat solide, organique ou inorganique et isolant, conducteur de l'électricité, ou semi-conducteur de l'électricité, lequel procédé comprend - la mise en contact dudit substrat avec le polymère en solution par une immersion - émersion, une enduction par contact, ou une enduction par projection, et - un traitement thermique du substrat recouvert de polymère obtenu à l'étape précédente à une température comprise entre 70 et 450 °C; ledit polymère n'étant pas un polymère à base d'acide acrylique. L'invention concerne également un procédé de métallisation du substrat solide organique ou inorganique revêtu par le film de polymère, laquelle métallisation peut être réalisée par voie sèche ou humide. Ce procédé trouve particulièrement application dans la métallisation de vias traversants pour la fabrication de dispositifs semi-conducteurs. The subject of the present invention is a non-electrochemical process for grafting, by a radical route, a polymer onto a solid, organic or inorganic and insulating, electrically conductive or electrically semi-conductive substrate, which process comprises - bringing said substrate into contact with the polymer in solution by immersion - emersion, coating by contact, or coating by spraying, and - heat treatment of the substrate covered with polymer obtained in the previous step at a temperature between 70 and 450°C; said polymer not being a polymer based on acrylic acid. The invention also relates to a process for metallization of the organic or inorganic solid substrate coated with the polymer film, which metallization can be carried out by dry or wet process. This method finds particular application in the metallization of through-vias for the manufacture of semiconductor devices.

CIRCUIT BREAKER ARMOURS THREE-PHASE HAVING ELEMENTS OF SHIELDING

Solution and process for activating the surface of a semiconductor substrate

The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. According to the invention, this composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits, especially in three dimensions.

Encapsulation of reactive components for 1-k systems using coaxial dies

The invention relates to the production of core-shell particles for encapsulating reactive components for single-component resin systems. In particular, the invention relates to the encapsulation of radical initiators such as peroxides. The invention further relates to a method for the 100% encapsulation of reactive components, whereby novel, storage-stable resin systems can be provided. At the same time, the core-shell particles are designed such that they can be opened nearly completely, easily and quickly during application, but have sufficient storage and shear stability before application.

Anti-viral Formulations Nanomaterials and Nanoparticles

The present invention provides the use of nanoparticles of a compound of general formula MX, where M is (i) a metal selected from the group consisting of Calcium (Ca), Aluminium (Al), Zinc (Zn), Nickel (Ni), Tungsten (W) or Copper (Cu); or (ii) a non-metal selected from the group consisting of Silicon (Si), Boron (B) or Carbon (C); in which n is equal to 1, 2, or 3, and X is (iii) a non-metal selected from the group consisting of Oxygen (O), Nitrogen (N), or Carbon (C); or (iv) an anion selected from the group consisting of phosphate (PO), hydrogen phosphate (HPO), dihydrogen phosphate (HPO), carbonate (CO), silicate (SiO), sulphate (SO), nitrate (NO), nitrite (NO); in which y is equal to 0, 1, 2, 3 or 4; for use in reducing and/or preventing virus transmission. Articles of protective clothing or filters are provided in which the fibres are coated with said nanoparticles for use in reducing and/or preventing virus transmission. 2. A use as claimed in claim 1 , in which the nanoparticles have an average particle size up to 100 nm.3. A use as claimed in claim 2 , in which the nanoparticles have an average particle size in a range of from about 1 nm to about 90 nm4. The use as claimed in claim 1 , in which the compounds of the general formula MXare oxides claim 1 , carbonates claim 1 , silicates claim 1 , carbides claim 1 , nitrides and/or phosphates.5. The use as claimed in claim 4 , in which the compounds of the general formula MXare selected from the group consisting of aluminium oxide (AlO) claim 4 , silicon dioxide claim 4 , (SiO) claim 4 , zinc oxide (ZnO) claim 4 , aluminium phosphate (AlPO) claim 4 , aluminium hydrogen phosphate (Al(HPO)) claim 4 , aluminium dihydrogen phosphate (Al(HPO)) claim 4 , calcium oxide (CaO) claim 4 , calcium carbonate (CaCO) claim 4 , calcium silicate (CaSiO) claim 4 , calcium phosphate (Ca(PO)) claim 4 , calcium hydrogen phosphate (CaHPO) claim 4 , or calcium dihydrogen phosphate (Ca(HPO) claim 4 , silicon nitride (SiN) claim 4 , ...

Convertible two compartment container

The present invention relates to a two compartment container, and more particularly, to a two compartment container for holding two fluids separate until such time as mixing is desired. A first compartment holds a first fluid. A second compartment holds a second fluid. A door separates the first compartment and the second compartment. A shaft holds the door in a closed position when the shaft is in a first position. A release component, coupled to the shaft, moves the shaft to a second position causing or allowing the door to move to an open position. The first fluid and the second fluid mix in response to the door moving to the open position.

METHOD FOR FORMING A VERTICAL ELECTRICAL CONNECTION IN A LAYERED SEMICONDUCTOR STRUCTURE

The invention proposes a method for forming a vertical electrical connection () in a layered semiconductor structure (), comprising the following steps: —providing () a layered semiconductor structure (), said layered semiconductor structure () comprising: —a support substrate () including an first surface () and a second surface (), —an insulating layer () overlying the first surface () of the support substrate (), and —at least one device structure () formed in the insulating layer (); and —drilling () a via () from the second surface of the support substrate () up to the device structure (), in order to expose the device structure (); characterized in that drilling () of the insulating layer is at least performed by wet etching (). 23203030. The method of claim 1 , wherein wet etching () is performed during a predetermined time claim 1 , said predetermined time depending on the material of the insulating layer () claim 1 , the etchant and the thickness of the insulating layer () to be drilled.3320. The method of or claim 1 , wherein wet etching () is performed with a solution containing fluorhydric acid claim 1 , and optionally glycerol.4. The method of claim 3 , wherein the etchant comprises between 0.5% and 50% in volume of Fluorhydric acid claim 3 , preferably 1.35%.5. The method of or claim 3 , wherein the etchant further comprises between 0.5 and 50% in volume of glycerol claim 3 , preferably 1.35%.63223201. The method of anyone of to further comprising a pre-wetting step () prior to the wet etching step () claim 3 , wherein the layered semiconductor structure () is plunged in water.73243201. The method of anyone of to further comprising a rinsing step () following the wet etching step () claim 3 , wherein the layered semiconductor structure () is rinsed with water.83263283201328. The method of anyone of to further comprising a vacuum step ( claim 3 , ) following the wet etching step () claim 3 , wherein the layered semiconductor structure () is submitted () ...

Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method

The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

Electrodeposition of a cobalt or copper alloy, and use in microelectronics

Electrodeposition of a cobalt or copper alloy, and use in microelectronics The present invention relates to a process for fabricating cobalt or copper interconnects, and to an electrolyte enabling implementation of said process. The electrolyte, with a pH of less than 4.0, comprises cobalt or copper ions, chloride ions, manganese or zinc ions, and at most two organic additives of low molecular mass. One of these additives may be an alpha-hydroxy carboxylic acid.

PROCESS FOR ELECTRODEPOSITION OF COBALT

The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5. 1. Electrolyte for the electrodeposition of cobalt , characterized in that the electrolyte is an aqueous solution comprising from 1 to 5 g/l of cobalt II ions , from 1 to 10 g/l of chloride ions , an acid in an amount sufficient to obtain a pH of between 1.8 and 4.0 , and at most two organic additives , said organic additives not being polymers.2. Electrolyte according to claim 1 , characterized in that the organic additive(s) have a molecular weight of less than 250 g/mol and greater than 50 g/mol.3. Electrolyte according to claim 1 , characterized in that it comprises at most one organic additive.4. Electrolyte according to claim 1 , characterized in that the organic additive(s) are chosen from alpha-hydroxy carboxylic acids.5. Electrolyte according to claim 1 , characterized in that the acid is hydrochloric acid and that at least one of the organic additives is chosen from organic compounds which have at least 1 pKa ranging from 1.8 to 3.5.6. Electrolyte according to claim 5 , characterized in that at least one of the organic additives is chosen from citric acid claim 5 , tartaric acid claim 5 , malic acid claim 5 , mandelic acid claim 5 , maleic acid claim 5 , fumaric acid claim 5 , glyceric acid claim 5 , orotic acid claim 5 , malonic acid claim 5 , L-alanine claim 5 , acetylsalicylic acid and salicylic acid.7. Electrolyte according to claim 1 , characterized in that the cobalt II ions are in free form claim 1 , that is to say not complexed with the organic additive(s).8. Electrolyte according to claim 1 , characterized in that its pH is between 2.0 and 3.5 ...

Implant for determining intraocular pressure

An implant for determining intraocular pressure includes at least one electrical pressure sensor for measuring the intraocular pressure, at least one microchip that is connected to the pressure sensor, and at least one antenna that is connected to the microchip, the microchip generating digitally encoded data from the electrical signals of the pressure sensor, which data can be transmitted by an antenna, using electromagnetic waves, to a receiver located outside the eye, and components being accommodated in a small housing, the outer dimensions of which are limited such that the implant can be positioned between the sclera and the choroid of the eye, is improved in that the pressure sensor is accommodated on an outer housing side of the implant, which outer housing side is brought into contact with the choroid in the eye.

CATALYTICALLY ACTIVE MATERIAL, METHOD FOR PRODUCING SAME, AND USE THEREOF

A catalytically active material is provided. The material includes a mixed oxide having a first metal selected from group 4 of the periodic table of elements and/or a second metal, and at least one further metal selected from group 11 of the periodic table of elements, wherein the macroscopic composition of the material given by the chemical formula corresponds to the composition of the material at a molecular level. A coating made of such a material is also provide, as is an article having such a coating, and a method for producing such a material. 2. The catalytically active material of claim 1 , wherein the ratio Vis between 1 and 1:3.31. The catalytically active material of claim 1 , wherein the first metal (M) comprises titanium and/or zirconium.42. The catalytically active material of claim 1 , wherein the second metal (M) comprises a lanthanide.52. The catalytically active material of claim 1 , wherein the second metal (M) comprises cerium.63. The catalytically active material of claim 1 , wherein the third metal (M) is copper.712. The catalytically active material of claim 1 , further comprising an atomic ratio of the first metal (M) to the second metal (M) of 1:4.8. The catalytically active material of claim 1 , comprising claim 1 , at least in part claim 1 , a nanocrystalline fraction claim 1 , wherein the nanocrystalline fraction is greater than 25 vol %.9. The catalytically active material of claim 8 , wherein the nanocrystalline fraction comprises nanocrystals having a crystallite size from 4 to 50 nm claim 8 , wherein the crystallite size is specified as a mean diameter of the crystallites.10. The catalytically active material of claim 8 , further comprising a granular structure in which nanocrystals of the nanocrystalline fraction do not have a preferred orientation so that the nanocrystals are randomly distributed.11. The catalytically active material of claim 1 , further comprising a temperature resistance of at least 600° C.12. The catalytically ...

PHOTON-TO-PLASMON COUPLER

An embodiment of the present invention relates to a photon-to-plasmon coupler for converting photons to plasmons or vice versa, said photon-to-plasmon coupler comprising 1. Photon-to-plasmon coupler for converting photons to plasmons or vice versa , said photon-to-plasmon coupler comprisinga photonic waveguide for guiding photons,a plasmonic waveguide for guiding plasmons, andtwo plasmonic strip waveguides,each of said two plasmonic strip waveguides being connected to said plasmonic waveguide and embracing an end section of the photonic waveguide such that each of said plasmonic strip waveguides is optically coupled to the end section of the photonic waveguide.2. Photon-to-plasmon coupler according to wherein the two plasmonic strip waveguides form a Y-shaped plasmonic strip waveguide structure that converges towards the plasmonic waveguide and embraces the end section of the photonic waveguide.3. Photon-to-plasmon coupler according to wherein two stripe-like gaps are formed between the Y-shaped plasmonic strip waveguide structure and the end section of the photonic waveguide.4. Photon-to-plasmon coupler according to wherein the plasmonic strip waveguides are plasmonically decoupled from one another by the end section of the photonic waveguide.5. Photon-to-plasmon coupler according to wherein each of the plasmonic strip waveguides is separated from the end section of the photonic waveguide by a stripe-like gap.6. Photon-to-plasmon coupler according to wherein the width of the gap between one of said plasmonic strip waveguides and the end section of the photonic waveguide equals the width of the gap between the other one of said plasmonic strip waveguides and the end section of the photonic waveguide.7. Photon-to-plasmon coupler according to wherein the ratio between the width of the gap and the width of said plasmonic strip waveguides is between 0.01 and 2.8. Photon-to-plasmon coupler according to wherein the waveguide width of the plasmonic strip waveguides is at ...

Copper electrodeposition bath containing an electrochemically inert cation

The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.

Kickback control methods for power tools

Kickback control methods for power tools. One power tool includes a movement sensor configured to measure an angular velocity of the housing of the power tool about the rotational axis. The power tool includes an electronic processor coupled to the switching network and the movement sensor and configured to implement kickback control of the power tool. To implement the kickback control, the electronic processor is configured to control the switching network to drive the brushless DC motor, receive measurements of the angular velocity of the housing of the power tool from the movement sensor, determine that a plurality of the measurements of the angular velocity of the housing of the power tool exceed a rotation speed threshold, and control the switching network to cease driving of the brushless DC motor in response to determining that the plurality of the measurements of the angular velocity exceed the rotation speed threshold.

ELECTROLYTE AND PROCESS FOR ELECTROPLATING COPPER ONTO A BARRIER LAYER

The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. 1. Electrolyte for electroplating copper onto a copper-diffusion barrier layer , the electrolyte comprising a source of copper ions , a solvent , and the combination of a suppressor and an accelerator , characterized in that the suppressor comprises the combination of bipyridine and imidazole , and the accelerator is thiodiglycolic acid.2. Electrolyte according to claim 1 , wherein its pH is greater than 6.7 claim 1 , preferably between 7.5 and 8.5 claim 1 , and more preferably of the order of 8.3. Electrolyte according to claim 1 , wherein the copper ions are derived from a compound chosen from copper sulphate claim 1 , copper chloride claim 1 , copper nitrate and copper acetate.4. Electrolyte according to claim 1 , which comprises less than 50 ppm of chlorine ions claim 1 , and that it is preferably free of chlorine ions.5. Electrolyte according to claim 1 , wherein the bipyridine is in the form of 2 claim 1 ,2′-bipyridine.6. Electrolyte according to claim 1 , additionally comprising a leveller and/or a brightener claim 1 , such as for example a polypyridine.7. Electrolyte according to claim 1 , wherein the concentration of copper ions is between 0.4 and 40 mM claim 1 , the concentration of bipyridine is between 0.4 and 40 mM claim 1 , the concentration of imidazole is between 1.2 and 120 mM claim 1 , and the concentration of thiodiglycolic acid is between 1 and 500 mg/l.8. Electrolyte according to claim 1 , wherein the solvent predominantly comprises water.9. Process for electroplating copper onto a copper-diffusion barrier layer claim 1 , and which is optionally covered with a copper seed layer claim 1 , said barrier layer covering one surface of a semiconductor substrate claim 1 , the surface of the substrate having a flat part and a set of at least one trench having a width of less than 200 nm claim 1 , the process ...

Method for detecting a screening of a sensor device of a motor vehicle by an object, computing device, driver-assistance system and motor vehicle

The invention relates to a method for detecting a screening of a sensor device ( 4 ) of a motor vehicle ( 1 ) by an object ( 8 ), in which at least one echo signal, captured by the sensor device ( 4 ), that characterizes a spacing between the sensor device ( 4 ) and the object ( 8 ) is received (S 1 ) by means of a computing device ( 3 ), a capture region (E) for the sensor device ( 4 ) is determined, and on the basis of the at least one received echo signal it is checked whether the capture region (E) of the sensor device ( 4 ) is being screened by the object ( 8 ), at least in some regions, wherein the at least one echo signal is assigned by means of the computing device ( 3 ) to a discrete spacing value (B 1, B 2, B 3 ) from a plurality of discrete spacing values (B 1, B 2, B 3 ), for each of the discrete spacing values (B 1, B 2, B 3 ) a power value (P) is determined (S 2 ) on the basis of the echo signal, and on the basis of the power values (P) a decision is made by means of a classifier as to whether at least a predetermined proportion of the capture region (E) of the sensor device ( 4 ) is being screened (S 6 ) by the object ( 8 ).

METHOD FOR FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUORINE IONS

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: 1. A process for forming nickel silicide or cobalt silicide on a silicon-comprising substrate , said process comprising the steps of:bringing a surface of the silicon-comprising substrate into contact with an aqueous solution comprising gold ions and fluoride ions in order to form particles of metallic gold on said surface, wherein the aqueous solution comprises a surface-active agent selected in the group consisting of compounds comprising at least one anionic or one nonionic polar group, and one alkyl chain comprising from 10 to 16 carbon atomsdepositing—by an electroless route—a layer essentially composed of nickel or of cobalt, on the obtained surface covered with particles of metallic gold and,applying a rapid thermal annealing at a temperature of between 300° C. and 750° C., so as to form nickel silicide or cobalt silicide.2. The process as claimed in claim 1 , wherein the surface of the silicon-comprising substrate is brought into contact with the aqueous solution for a duration of between 5 seconds and 5 minutes.3. The process as claimed in claim 1 , wherein the aqueous solution comprising fluoride ions is obtained by a step of incorporating hydrofluoric acid (HF) claim 1 , NHF claim 1 , or one of their mixtures claim 1 , into water.4. The process as claimed in claim 1 , wherein the aqueous solution comprising gold ions is obtained by a step of incorporating chloroauric acid (HAuCl) into water.5. The process as claimed in claim 1 , wherein the aqueous solution comprises:from 0.1 mM to 10 mM of gold ions, andfrom 0.6 M to 3.0 M of fluoride ions.6. The process as claimed in claim 1 , wherein the alkyl chain comprises from 10 to 14 carbon atoms.7. The process as claimed in claim 1 , wherein the layer essentially composed of nickel or of cobalt has a uniform or conformal thickness of between 10 and 150 nm.8. The process ...

Aromatic polycarboxylic acids - esp terephthalic acid prepd by aromatic cpd oxidn

Aromatic polycarboxylic acids, esp. terephthalic acid, are prepd. by liquid-phase reaction of an aromatic cpd., having >=2 oxidisable aliphatic side-chains, esp. p-xylene, with an O2-contg. gas, esp. air, in presence of an oxidn. catalyst, esp. CoBr2, and an inert diluent, esp. a lower monocarboxylic acid, partic. AcOH, in a primary oxidn. zone to >=90% conversion; leading escaping reaction gases to a distn. zone situated in front of a condensation zone for the escaping gases; and supplying at least pt. of distn. zone bottoms, contg. =10 (3-7)wt.% water, to the oxidn. zone. Non-condensable gas from condensation zone may be charged to liquid phase of oxidn. zone in amount such as to lower temp. by approx. 5 degrees C. Reaction prod. may be led to a subsequent oxidn. zone operated at higher temp. and/or O2 partial press.

Method for outputting a driving instruction relating to a lane change of a motor vehicle, control device, driver assistance system and motor vehicle

Die Erfindung betrifft ein Verfahren zum Ausgeben eines Fahrhinweises, bei welchem während ein Kraftfahrzeug (1) auf einer ersten Fahrspur (13) einer Fahrbahn (12) mit zumindest zwei Fahrspuren (13, 14, 20) bewegt wird, mittels einer Steuereinrichtung (8) Sensordaten von einem Umfeldsensor (3) empfangen werden, anhand der Sensordaten Nahverkehrsflussdaten, welchen einen jeweiligen Verkehrsfluss auf den zumindest zwei Fahrspuren (13, 14, 20) in einem vorbestimmten Erfassungsbereich (19) des Umfeldsensors (3) beschreiben, bestimmt werden, und der Fahrhinweis in Abhängigkeit von den Nahverkehrsflussdaten ausgegeben wird, wobei der Fahrhinweis einen Spurwechsel des Kraftfahrzeugs (1) von der ersten Fahrspur (13) auf eine zweite der zumindest zwei Fahrspuren (13, 14, 20) betrifft, wobei mittels der Steuereinrichtung (8) Verkehrsdaten empfangen werden, anhand der Verkehrsdaten Fernverkehrsflussdaten bestimmt werden, welche den jeweiligen Verkehrsfluss auf den zumindest zwei Fahrspuren (13, 14, 20) außerhalb des Erfassungsbereichs (19) des Umfeldsensors (3) beschreiben und der Fahrhinweis zusätzlich in Abhängigkeit von den Fernverkehrsflussdaten ausgegeben wird. The invention relates to a method for outputting a driving instruction, in which a motor vehicle (1) is moved on a first lane (13) of a roadway (12) with at least two lanes (13, 14, 20) by means of a control device (8). Sensor data from an environmental sensor (3) are received, based on the sensor data local traffic flow data, which describe a respective traffic flow on the at least two lanes (13, 14, 20) in a predetermined detection range (19) of the environmental sensor (3), and the Driving advice is issued in response to the Nahverkehrsflussdaten, the driving advice a lane change of the motor vehicle (1) from the first lane (13) to a second of the at least two lanes (13, 14, 20), wherein by means of the control device (8) traffic data be determined on the basis of the traffic data Fernverkehrsflussdaten which ...

Corrector for axial and extra-axial beam path and TEM with it

Korrektor (1) für den axialen und außeraxialen Strahlengang eines teilchenoptischen Systems mit einem ersten (10) und einem zweiten (20) Korrekturstück, die im Strahlengang (2) auf einer optischen Achse (3) nacheinander angeordnet sind, wobei jedes Korrekturstück (10, 20) vier nacheinander angeordnete Multipolelemente (11, 12, 13, 14; 24, 23, 22, 21) mit den folgenden Feldern in einer Symmetrie zu einer Mittelebene (5) aufweist, wobei von den Multipolelementen (11, 12, 13, 14; 24, 23, 22, 21) das erste (11; 24) und das vierte (14; 21) zur Erzeugung von Quadrupolfeldern (11', 14'; 24', 21') und das zweite (12; 23) und dritte (13; 22) zur Erzeugung von Oktupolfeldern (12''', 13'''; 23''', 22''') und von Quadrupolfeldern (12', 13'; 23', 22') dienen, wobei letztere übereinandergelagerte magnetische (12', 13'; 23', 22') und elektrische Felder (12'', 13''; 23'', 22'') sind und wobei die Quadrupolfelder (11', 12', 13', 14'; 24', 23', 22', 21') aller vier Multipolelemente (11, 12, 13,... Corrector (1) for the axial and extra-axial beam path of a particle-optical system with a first (10) and a second (20) correction piece, which are arranged in the beam path (2) on an optical axis (3) successively, each correction piece (10, 20) has four successively arranged multipole elements (11, 12, 13, 14, 24, 23, 22, 21) with the following fields in a symmetry to a center plane (5), wherein of the multipole elements (11, 12, 13, 14 24, 23, 22, 21) comprise the first (11, 24) and the fourth (14, 21) for generating quadrupole fields (11 ', 14', 24 ', 21') and the second (12, 23) and third (13; 22) for generating octupole fields (12 '' ', 13' '', 23 '' ', 22' '') and of quadrupole fields (12 ', 13', 23 ', 22'), wherein the latter are superimposed ...

Particle optical corrector for axial and off-axis beam path

Imaging system with mirror corrector for charged particle radiation

Imaging corrector of the Wien type for electron microscopes

Phase shifting element and particle beam device with phase shifting element

The phase shifting element (1) has a unit (2) for generating an inhomogeneous or anisotropic potential. An opening is formed in the perpendicular direction in rotationally non-symmetric manner to a plane of the phase shifting element. The unit is formed for the production of an inhomogeneous potential for the production of an electric or magnetic potential. The phase shifting element has multiple openings. An independent claim is also included for the particle beam unit with an object lens.

Phase-shifting element and particle beam device with phase-shifting element

Die Erfindung betrifft ein phasenschiebendes Element (1) zum Schieben einer Phase zumindest eines Teils eines Teilchenstrahls sowie ein Teilchenstrahlgerät mit einem derartigen phasenschiebenden Element (1). Der Erfindung liegt die Aufgabe zugrunde, ein phasenschiebendes Element und ein Teilchenstrahlgerät mit einem phasenschiebenden Element anzugeben, bei denen einen Teilchenstrahl abschattende Bauelemente vermieden werden, so daß ein guter Informationsgehalt erzielt wird, und bei denen der Phasenkontrast im wesentlichen raumfrequenzunabhängig ist. Diese Aufgabe wird dadurch gelöst, daß das phasenschiebende Element (1) mindestens ein Mittel (2) zur Erzeugung eines inhomogenen bzw. anisotropen Potentials aufweist. Das erfindungsgemäße Teilchenstrahlgerät ist mit dem phasenschiebenden Element (1) versehen.

Monochromator for electron optics, in particular electron microscopy

Monochromator für die Elektronenoptik; insbesondere Elektronenmikroskopie zur stigmatischen Abbildung unter Verwendung von Ablenkfeldern und einer Schlitzblende, wobei die Ablenkfelder (1–4) und der optische Strahlengang spiegelsymmetrisch zu einer Ebene (5), der dispersiven Ebene, verlaufen, dadurch gekennzeichnet, dass in der dispersiven Ebene (5) ein astigmatisches Zwischenbild (= Linienfokus) erzeugt wird und die Schlitzblende (7) dem astigmatischen Zwischenbild derart zugeordnet ist, daß der Schlitz in Richtung des Linienfokus ausgerichtet ist.

Method and device for creating image contrast with the use of phase shifting

Production of high-purity suspensions containing precipitated silicas by electrodialysis

Die vorliegende Erfindung betrifft Suspensionen mit einem sehr niedrigen Salzgehalt, welche zumindest eine Fällungskieselsäure enthalten, ein Verfahren zu deren Herstellung sowie deren Verwendung. The present invention relates to suspensions with a very low salt content, which contain at least one precipitated silica, a process for their preparation and their use.

Method for detecting variables acting in a printing process

Verfahren zur Erfassung von bei einem Druckvorgang wirkenden Variablen, bei welchem – von einem Druckgerät oder einer Druckmaschine auf einem Druckbogen eine Messfeldanordnung ausgedruckt wird, wobei die Messfelder in Form eines Messfeldblockes mit mehreren Zeilen und mehreren Spalten angeordnet sind, und wobei eine Gruppe von Messfeldern zur Erfassung eines Grauachsenverhaltens vorgesehen ist, deren Messfelder mit Tonwerten der Farben Cyan, Magenta, Gelb und Schwarz versehen sind, wobei Flächendeckungsgrade mindestens dreier dieser Farben sich von Messfeld zu Messfeld unterscheiden, – die Messfelder der ausgedruckten Messfeldanordnung mittels eines Spektralphotometers, dem ein Polarisationsfilter vorgeschaltet ist, abgetastet werden und – die durch die Abtastung erhaltenen Messwerte in Form einer das Grauachsenverhalten beschreibenden Tabelle und/oder einer Grafik ausgegeben werden. Method for detecting variables acting in a printing process, in which A measuring field arrangement is printed by a printing device or a printing press on a printed sheet, the measuring fields being arranged in the form of a measuring field block having a plurality of rows and a plurality of columns, and a group of measuring fields being provided for detecting gray-axis behavior whose measuring fields are provided with tonal values of the colors Cyan, magenta, yellow, and black, with areal grades of at least three of these colors differing from patch to patch, - The measuring fields of the printed measuring field array by means of a spectrophotometer, which is preceded by a polarizing filter, are scanned and The measured values obtained by the scanning are output in the form of a table describing the gray-axis behavior and / or a graph.

Measurement field arrangement

Messfeldanordnung zur Erfassung von bei einem Druckvorgang wirkenden Variablen, wobei Messfelder in Form eines Messfeldblockes mit mehreren Zeilen und mehreren Spalten angeordnet sind, und wobei – eine erste Gruppe der Messfelder zur Erfassung des Tonwertverhaltens, – eine zweite Gruppe der Messfelder zur Erfassung des Grauachsenverhaltens, – eine dritte Gruppe der Messfelder zur Erfassung des Druckverhaltens beim Übereinanderdruck und – eine weitere Gruppe der Messfelder vorgesehen ist, deren Cyan-, Magenta-, Gelb- und Schwarzwert jeweils einen Flächendeckungsgrad von 0% aufweist und deren Helligkeitswert bei 100% liegt. Measuring field arrangement for detecting variables acting in a printing operation, wherein measuring fields are arranged in the form of a measuring field block having a plurality of rows and a plurality of columns, and wherein A first group of the measuring fields for recording the tonal behavior, A second group of the measuring fields for detecting the gray-axis behavior, A third group of measuring fields for recording the printing behavior in the case of overprinting and A further group of the measuring fields is provided whose cyan, magenta, yellow and black values each have a surface coverage of 0% and whose brightness value is 100%.

Omega-type electron energy filter

Es wird ein abbildendes Omega-Filter mit geraden Kanten der Polschuhe angegeben, das eine gute Ortsauflösung und eine sehr gute Energieauflösung hat. Es besteht aus vier Umlenkbereichen mit Umlenkwinkeln, die größer als 90° sind. An imaging omega filter with straight edges of the pole shoes is specified, which has a good spatial resolution and a very good energy resolution. It consists of four deflection areas with deflection angles that are greater than 90 °.

Electron energy filter with magnetic deflection unit

Omega-type electron energy filter

Alpha-type electron energy filter

VETERINATED PREPARATION

COBALT ELECTRODEPOSITION PROCESS

La présente invention se rapporte à un procédé de fabrication d'interconnexions en cobalt et à un électrolyte permettant sa mise en œuvre. L'électrolyte de pH inférieur à 4,0 comprend des ions cobalt, des ions chlorure et au plus deux additifs organiques de faible masse moléculaire. Un de ces additifs peut être un acide carboxylique alpha-hydroxylé. The present invention relates to a process for manufacturing cobalt interconnections and to an electrolyte allowing its implementation. The electrolyte with a pH below 4.0 includes cobalt ions, chloride ions and at most two low molecular weight organic additives. One of these additives can be an alpha-hydroxy carboxylic acid.

Electrolyte and Cobalt Electrodeposition Process

Electrolyte et Procédé d’électrodéposition de cobalt La présente invention se rapporte à un procédé de fabrication d’interconnections en cobalt et à un électrolyte permettant sa mise en œuvre. L’électrolyte de pH inférieur à 4,0 comprend des ions cobalt, des ions chlorure et des additifs organiques dont un acide carboxylique alpha-hydroxylé et une amine telle que la polyéthylèneimine ou le benzotriazole. Figure pour l’abrégé : Figure 2 Electrolyte and Cobalt Electrodeposition Process The present invention relates to a process for manufacturing cobalt interconnects and to an electrolyte allowing its implementation. The electrolyte with a pH below 4.0 includes cobalt ions, chloride ions and organic additives including an alpha-hydroxy carboxylic acid and an amine such as polyethyleneimine or benzotriazole. Figure for abstract: Figure 2

DEVICE FOR RECOVERING FLOATANTS IN DECANTATION BASINS

Electroplating of a cobalt alloy and use in microelectronics

Electrodéposition d’un alliage de cobalt et utilisation en microélectronique La présente invention se rapporte à un procédé de fabrication d’interconnexions en cobalt et à un électrolyte permettant sa mise en œuvre. L’électrolyte de pH inférieur à 4,0 comprend des ions cobalt, des ions chlorure, des ions manganèse ou zinc, et au plus deux additifs organiques de faible masse moléculaire. Un de ces additifs peut être un acide carboxylique alpha-hydroxylé. Electroplating of a cobalt alloy and use in microelectronics The present invention relates to a process for manufacturing cobalt interconnects and to an electrolyte allowing its implementation. Electrolyte with a pH of less than 4.0 includes cobalt ions, chloride ions, manganese or zinc ions, and at most two low molecular weight organic additives. One of these additives can be an alpha-hydroxy carboxylic acid.

Removal of fat from the surface of waste water treatment settling vessels

Fat and grease is scooped up by a trough (6) attached to a cylindrical tube (1). The tube has a slot (2) along its length, within the region enclosed by the trough. Collected material enters the tube by this slot and leaves by an opening (3) at one end. The tube may rotate continuously, or periodically at preset intervals. The scoop may be positioned adjacent to a deflector to help collect the fats.

PROCESS FOR PREPARING AN ELECTRIC INSULATING FILM AND APPLICATION FOR METALLIZING VIAS THROUGH

QUATERNARY SALTS OF 1-ALKYL-3-PHENYLPYRIDINIUM HERBICIDES

L'invention concerne des sels quaternaires de formule : The invention relates to quaternary salts of the formula:

Reactive 1-component roadway marking

The invention relates to a one-component, storage-stable formulation for marking road surfaces. The invention in particular relates to a formulation for roadway marking comprising encapsulated radical initiators which do not influence the storage stability of the roadway marking and are simple to break open upon application in order to release the initiator.

Method for forming a metal silicide using a solution containing gold ions and fluorine ions

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: - exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes, - depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt, - applying a rapid thermal annealing at a temperature of between 300°C and 750°C, so as to form the nickel silicide or the cobalt silicide. The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

Method of preparing an electrical insulation film and application for the metallization of through-vias

The present invention relates essentially to a method of preparing an electrical insulating film on the surface of an electrically conducting or semi­conducting substrate, such as a silicon substrate. According to the invention, this method comprises the following: a) said surface is brought into contact with a liquid solution comprising: a protic solvent, at least one diazonium salt, at least one in-chain polymerizable monomer soluble in said protic solvent, and at least one acid in an amount sufficient to stabilize said diazonium salt by adjusting the pH of said solution to a value below 7, preferably below 2.5; and b) said surface is polarized in pulse potentiostatic or galvanostatic mode for a time sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: metallization of through-vias, especially for 3‑D integrated circuits.

APPARATUS FOR RECOVERING THE FLOOD IN PLASMA

Method for forming a metal silicide using a solution containing gold ions and fluorine ions

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: - exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes, - depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt, - applying a rapid thermal annealing at a temperature of between 300°C and 750°C, so as to form the nickel silicide or the cobalt silicide. The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

Basically substituted benzyl phthalazone derivatives, acid salts thereof and process forthe production thereof

Method and apparatus for setting the sharpness of an optical imaging system

A method and apparatus for setting sharpness of an optical image system by step-by-step adjustment of the distance between a subject and an objective until a maximum is achieved for respectively identified sharpness values of the objective.

Aqueous coolant

Direct curing of reactive resins by means of plasma induction

Patent GR71911B

Power tool including electromagnetic clutch

A clutch mechanism for use in a rotary power tool having a motor comprises an input member to which torque from the motor is transferred and an output member movable between a first position in which the output member is engaged with the input member for co-rotation therewith, and a second position in which the output member is disengaged from the input member. The clutch mechanism further comprises a biasing member biasing the output member into the first position and an electromagnet which, when energized, moves the output member from the first position to the second position.

Process of preparing an electrical isolation film and application for the metallisation of through vias

Glycopeptide composition with improved antibiotic activity

A glycopeptide composition with improved antibiotic activity is disclosed, along with a method of preparing such a composition and a pharmaceutical composition made therefrom.

LOCKING DEVICE.

Solution and method for activating the oxidized surface of a semiconductor substrate

The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes: B) a bifunctional organic binder consisting one or more organosilane complexes; C) a solvent system consisting one or more solvents for solubilizing the said activator and the said binder. Application: Fabrication of electronic devices such as in particular integrated circuits in particular three-dimensional.

Substituted quinolines and cinnolines

Method for white balance

In a method for white balance of an optoelectronic scan unit of a scan apparatus for the image-point-by-image-point and line-by-line scanning of an image original, in a light/voltage converter unit of the scan light, modulated with the densities of the scanned image points, is converted into image values. A white level is predetermined and a white balance is carried out by a reference white of a balance strip. The amplification of the light/voltage converter unit is modified in such a way that the image value produced in scanning the brightest point of the image original, the white point, corresponds to the white level.

Method of preparing an electrical insulation film and application for the metallization of through-vias

La présente invention concerne essentiellement un procédé de préparation d'un film isolant électrique à la surface d'un substrat conducteur ou semiconducteur de l'électricité, tel qu'un substrat de silicium. Selon l'invention, ce procédé comprend : a) la mise en contact de ladite surface avec une solution liquide comprenant : un solvant protique; au moins un sel de diazonium; au moins un monomère polymérisable en chaîne et soluble dans ledit solvant protique; au moins un acide en une quantité suffisante pour stabiliser ledit sel de diazonium par ajustement du pH de ladite solution à une valeur inférieure à 7, de préférence inférieure à 2,5; b) la polarisation de ladite surface selon un mode potentio- ou galvano-pulsé pendant une durée suffisante pour former un film présentant une épaisseur d'au moins 60 nanomètres, et de préférence comprise entre 80 et 500 nanomètres. Application : Métallisation de vias traversants, notamment de circuits intégrés 3D. The present invention essentially relates to a method of preparing an electrical insulating film on the surface of a conductive or semiconductor substrate of electricity, such as a silicon substrate. According to the invention, this process comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one polymerizable monomer in a chain and soluble in said protic solvent; at least one acid in an amount sufficient to stabilize said diazonium salt by adjusting the pH of said solution to less than 7, preferably less than 2.5; b) polarizing said surface in a potentio- or galvano-pulsed mode for a time sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through vias, including 3D integrated circuits.

Corn-harvesting machine.

Copper electrodeposition bath containing an electrochemically inert cation

The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.

Process for grafting a polymeric thin film onto a substrate and process for metallizing this thin film

One subject of the present invention is a non-electrochemical process for radical grafting of a polymer to a solid, organic or inorganic and insulating, electrically conductive or electrically semiconductive substrate, which process comprises - bringing said substrate into contact with the polymer in solution via an immersion-emersion, a contact coating, or a spray coating, and - heat treating the polymer-covered substrate obtained in the preceding step at a temperature between 70°C and 450°C; said polymer not being a polymer based on acrylic acid. The invention also relates to a process for metallizing the solid, organic or inorganic substrate coated by the polymer film, which metallizing may be carried out via a dry or wet route. This process particularly finds an application in the metallization of through vias for the manufacture of semiconductor devices.

Method of preparing an electrical insulation film and application for the metallization of through-vias

La présente invention concerne essentiellement un procédé de préparation d'un film isolant électrique à la surface d'un substrat conducteur ou semiconducteur de l'électricité, tel qu'un substrat de silicium. Selon l'invention, ce procédé comprend : a) la mise en contact de ladite surface avec une solution liquide comprenant : un solvant protique; au moins un sel de diazonium; au moins un monomère polymérisable en chaîne et soluble dans ledit solvant protique; au moins un acide en une quantité suffisante pour stabiliser ledit sel de diazonium par ajustement du pH de ladite solution à une valeur inférieure à 7, de préférence inférieure à 2,5; b) la polarisation de ladite surface selon un mode potentio-ou galvano-pulsé pendant une durée suffisante pour former un film présentant une épaisseur d'au moins 60 nanomètres, et de préférence comprise entre 80 et 500 nanomètres. Application : Métallisation de vias traversants, notamment de circuits intégrés 3D.

METHOD OF CLEANING WASTE WATER USING ACTIVATED CARBON

Kickback control methods for power tools

Kickback control methods for power tools. One power tool includes a movement sensor configured to measure an angular velocity of the housing of the power tool about the rotational axis. The power tool includes an electronic processor coupled to the switching network and the movement sensor and configured to implement kickback control of the power tool. To implement the kickback control, the electronic processor is configured to control the switching network to drive the brushless DC motor, receive measurements of the angular velocity of the housing of the power tool from the movement sensor, determine that a plurality of the measurements of the angular velocity of the housing of the power tool exceed a rotation speed threshold, and control the switching network to cease driving of the brushless DC motor in response to determining that the plurality of the measurements of the angular velocity exceed the rotation speed threshold.

Worm press

Electron beam source

Der Elektronenstrahlerzeuger besteht aus einer linienförmigen Kathode (K), insbesondere einem LaB6-Schneidenemitter mit abgeflachter Spitze, einer in der Ebene der Kathodenspitze angeordneten Schlitzblende (W) und einer Doppelanode, deren Elektroden (A1, A2) ebenfalls als Schlitzblenden ausgebildet sind. Die Potentiale (VW, VA1, VA2) der Schlitzblenden (W, A1, A2) und deren Abstände (z) zur Kathode (K) werden jeweils so vorgegeben, daß eine stigmatische virtuelle Elektronenquelle im Unendlichen liegt. The electron beam generator consists of a linear cathode (K), in particular a LaB6 cutting edge emitter with a flattened tip, a slit diaphragm (W) arranged in the plane of the cathode tip and a double anode, the electrodes (A1, A2) of which are also designed as slit diaphragms. The potentials (VW, VA1, VA2) of the slit diaphragms (W, A1, A2) and their distances (z) from the cathode (K) are each predetermined so that a stigmatic virtual electron source is infinite.

Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method

The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through- silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: - at least one metal salt of nickel or cobalt; - at least one reducing agent; - at least one polymer bearing amine functions, and - at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

Substituted quinolines and cinnolines

Method for temporary or permanent wafer bonding

The present invention relates to a method for temporary or permanent bonding of two solid substrates, one of the two substrates having a conducting or semiconducting surface. This method comprises electrografting of a very thin polymer layer on said conducting or semiconducting surface, and assembling the two substrates through the electrografted polymer layer at a processing temperature higher than 150°C. For the first time the present invention makes it possible to provide a temporary bonding process and a permanent bonding process using the same and single adhesive polymer.

Process of preparing an electrical isolation film and application for the metallisation of through vias

The present invention relates essentially to a method of preparing an electrical insulating film on the surface of an electrically conducting or semi­conducting substrate, such as a silicon substrate. According to the invention, this method comprises the following: a) said surface is brought into contact with a liquid solution comprising: a protic solvent, at least one diazonium salt, at least one in-chain polymerizable monomer soluble in said protic solvent, and at least one acid in an amount sufficient to stabilize said diazonium salt by adjusting the pH of said solution to a value below 7, preferably below 2.5; and b) said surface is polarized in pulse potentiostatic or galvanostatic mode for a time sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: metallization of through-vias, especially for 3‑D integrated circuits.

Solid electrolyte materials, process for production and uses thereof

A process for producing a lithium titanium phosphate based solid electrolyte material is disclosed, the process comprising the steps of: (i) providing a solution comprising a Li source material, a Ti source material, a P source material and optionally a Si source material and/or a source material of a metal M, wherein M is selected from the group of Al, Ga, Ge, In, Sc, V, Cr, Mn, Co, Fe, Y, the lanthanides or a combination thereof; (ii) generating an aerosol from the solution; (iii) subjecting the generated aerosol to flame pyrolysis to form a particulate precursor material therefrom; and (iv) subjecting the particulate precursor material to field-assisted sintering to form the lithium titanium phosphate based solid electrolyte material. Furthermore, disclosed are a solid electrolyte material obtainable through said production process and articles comprising the same.

Reactive 1-component roadway marking

The invention relates to a one-component, storage-stable formulation for marking road surfaces. The invention in particular relates to a formulation for roadway marking comprising encapsulated radical initiators which do not influence the storage stability of the roadway marking and are simple to break open upon application in order to release the initiator.

SUBSTITUTED QUINOLINES AND CINNOLINES, PROCEDURES FOR THEIR PREPARATION AND THEIR USE

Process for grafting a polymeric thin film onto a substrate and process for metallizing this thin film

One subject of the present invention is a non-electrochemical process for radical grafting of a polymer to a solid, organic or inorganic and insulating, electrically conductive or electrically semiconductive substrate, which process comprises - bringing said substrate into contact with the polymer in solution via an immersion-emersion, a contact coating, or a spray coating, and - heat treating the polymer-covered substrate obtained in the preceding step at a temperature between 70°C and 450°C; said polymer not being a polymer based on acrylic acid. The invention also relates to a process for metallizing the solid, organic or inorganic substrate coated by the polymer film, which metallizing may be carried out via a dry or wet route. This process particularly finds an application in the metallization of through vias for the manufacture of semiconductor devices.

2, 4, 6-triiodobenzoic acid, compositions for use asx-ray contrast agent and process for their production thereof

Device for recuperating floating materials in a sedimentation tank

Dispositif en vue de la récupération des flottants qui se forment sur les bassins de décantation des installations de traitement d'eaux résiduaires, caractérisé en ce qu'il se présente sous la forme d'une écope rotative implantée au-dessus du bassin à l'extrémité de ce dernier et qui comprend : un tube d'écoulement émergé (1), comportant une lumière longitudinale (2) et qui est fermé à une extrémité et ouverte (3) à l'autre ; un godet immergé (6) soudé sur ledit tube d'écoulement (1), sur toute la longueur de celui-ci et, un moto-réducteur (8) entraînant en rotation périodique sur 360.degree. l'ensemble tube d'écoulement (1) + godet (6) de manière que les flottants soient récupérés à chaque rotation par ledit godet dont la position par rapport au tube d'écoulement émergé (1) est déterminée de façon que lesdits flottants soient déversés dans ledit tube par l'intermédiaire de sa lumière longitudinale (2) puis évacués par gravité au travers de l'extrémité ouverte (3) dudit tube émergé.

Corrector for axial and off-axis beam path

Die Erfindung betrifft einen Korrektor (1) für den axialen und außeraxialen Strahlengang eines teilchenoptischen Systems mit einem ersten (10) und einem zweiten (20) Korrekturstück, die im Strahlengang (2) auf einer optischen Achse (3) nacheinander angeordnet sind, wobei jedes Korrekturstück (10, 20) vier nacheinander angeordnete Multipolelemente (11, 12, 13, 14; 24, 23, 22, 21) mit den folgenden Feldern in einer Symmetrie zu einer Mittelebene (5) aufweist, wobei von den Multipolelementen (11, 12, 13, 14; 24, 23, 22, 21) das erste (11; 24) und das vierte (14; 21) zur Erzeugung von Quadrupolfeldern (11', 14'; 24', 21') und das zweite (12; 23) und dritte (13; 22) zur Erzeugung von Oktupolfeldern (12''', 13'''; 23''', 22''') und von Quadrupolfeldern (12', 13'; 23', 22') dienen, wobei letztere übereinandergelagerte magnetische (12', 13'; 23', 22') und elektrische Felder (12'', 13''; 23'', 22'') sind und wobei die Quadrupolfelder (11', 12', 13', 14'; 24', 23', 22', 21') aller vier Multipolelemente (11, 12, 13, 14; 24, 23, 22, 21) von einem zum nächsten um 90° gedreht sind. Erfindungsgemäß kann ein Astigmatismus 3. Ordnung dadurch korrigiert werden, daß ein in der Mittelebene (5) liegendes zentrales Multipolelement (4) ein Oktupolfeld (4') erzeugt. The invention relates to a corrector (1) for the axial and off-axis beam path of a particle-optical system with a first (10) and a second (20) correction piece, which are arranged in the beam path (2) on an optical axis (3), each one Correction piece (10, 20) has four successively arranged multipole elements (11, 12, 13, 14, 24, 23, 22, 21) with the following fields in a symmetry to a center plane (5), wherein of the multipole elements (11, 12 , 13, 14; 24, 23, 22, 21) the first (11; 24) and the fourth (14; 21) for generating quadrupole fields (11 ', 14'; 24 ...

Electrolyte and method for electrodepositing copper onto a barrier layer

La présente invention a pour objet une composition d'électrolyte pour le dépôt de cuivre sur des substrats semi-conducteurs recouverts d'une couche barrière. Cet électrolyte contient la combinaison d'imidazole et de 2,2'-bipyridine, utilisée comme suppresseur, et de l'acide thiodiglycolique, utilisé comme accélérateur. La combinaison de ces additifs permet d'obtenir un remplissage bottom- up sur des tranchées de très faible largeur, typiquement inférieure à 100 nm. The present invention relates to an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2'-bipyridine, used as a suppressor, and thiodiglycolic acid, used as an accelerator. The combination of these additives makes it possible to obtain bottom-up filling on very narrow trenches, typically less than 100 nm.

ELECTROSTATIC FREE-FALL SEPARATOR

PROCESS FOR METALLIZING A SEMICONDUCTOR SUBSTRATE WITH COPPER USING COBALT OR NICKEL SILICIDE

L'invention a pour objet un procédé de métallisation au cuivre qui utilise un siliciure particulier pour augmenter l'adhésion du dépôt de cuivre sur un substrat semi-conducteur . Dans une application microélectronique, ce procédé présente l'avantage de pouvoir être mis en œuvre pour la fabrication de circuits intégrés en trois dimensions par la technique dite via-last. En effet, cette technologie est limitée en température. Dans une application photovoltaïque, le procédé de l'invention permet de réaliser un empilement siliciure/nickel en une étape avec un budget thermique inférieur. Le procédé de l'invention comprend une étape consistant à appliquer un traitement thermique rapide à un substrat recouvert de nickel ; de manière à former entre la couche de nickel et la couche de silicium, une couche intercalaire qui constitue un promoteur d'adhésion entre le substrat et le cuivre et qui comprend un siliciure de stœchiométrie SiM2, M représentant le nickel, ledit siliciure étant formé par diffusion d'une partie du nickel dans le silicium de manière à laisser une couche de nickel résiduel en surface, le traitement thermique étant réalisé à une température inférieure à 350°C et pendant une durée inférieure à 30 minutes. The subject of the invention is a copper metallization process which uses a particular silicide to increase the adhesion of the copper deposit to a semiconductor substrate. In a microelectronic application, this method has the advantage of being able to be implemented for the manufacture of integrated circuits in three dimensions by the technique known as via-last. Indeed, this technology is limited in temperature. In a photovoltaic application, the method of the invention makes it possible to produce a silicide / nickel stack in one step with a lower thermal budget. The method of the invention comprises a step consisting in applying a rapid heat treatment to a substrate coated with nickel; so as to form between the layer of ...

Locking device for the leaves of doors and windows

IMPROVEMENTS INTRODUCED IN THE ESTANTS DEPOSITS FOR METHANIZATION OR STORAGE IN CORROSIVE ENVIRONMENT.

Depósito estanco destinado para realizar un tratamiento de fermentación metánica de efluentes tales como particularmente lodos, líquidos de estiércol, efluentes urbanos o industriales, o para almacenar un medio de ambiente corrosivo, que comprende una solera de hormigón (10), un anillo (12) de acero o de hormigón y una cúpula (14) estanca y resistente a la corrosión, constituida por una doble membrana; una membrana interior (15) que delimita, con la superficie del e uente líquido contenido en el indicado anillo, un recinto estanco (13) destinado para recibir el biogas resultante de la fermentación metánica, o el indicado ambiente corrosivo y, una membrana exterior (16) que envuelve la membrana interior y que, puesta en sobrepresión, aplica una presión dada al volumen de biogas o del ambiente corrosivo, contenido en el indicado recinto (13), caracterizándose el indicado depósito estanco porque la mencionada membrana interior (15) se prolonga hacia abajo por un faldón (18), cuya parte inferior está sumergida bajo el nivel del e uente líquido contenido en el depósito con el fin de asegurar la estanqueidad del recinto (13) delimitado por encima de dicho nivel, fijándose el indicado faldón, por toda su periferia, bajo el nivel del e uente líquido (17), sobre la pared interna del indicado anillo (12), por mediación de una junta (19) aplicada contra la indicada pared, con la ayuda de herrajes planos (20) de acero inoxidable que van fijados a la pared. Watertight tank intended to carry out a methane fermentation treatment of effluents such as sludge, manure liquids, urban or industrial effluents, or to store a corrosive environment, comprising a concrete screed (10), a ring (12) made of steel or concrete and a dome (14) waterproof and resistant to corrosion, consisting of a double membrane; an inner membrane (15) that delimits, with the surface of the liquid source contained in the indicated ring, a sealed enclosure (13) intended to receive the biogas resulting from the ...

Fungicidal quinoline, quinazoline and cinnoline derivatives and compositions containing them

Work chair

A glycopeptide composition with improved antibiotic activity

A glycopeptide composition with improved antibiotic activity is disclosed, along with a method of preparing such a composition and a pharmaceutical composition made therefrom.

Method of preparing an electrically insulating film and application for the metallization of vias

Solution and method for activating the oxidized surface of a semiconductor substrate

The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes: B) a bifunctional organic binder consisting one or more organosilane complexes; C) a solvent system consisting one or more solvents for solubilizing the said activator and the said binder. Application: Fabrication of electronic devices such as in particular integrated circuits in particular three-dimensional.

DEVICE FOR RECOVERY OF FLOATING SUBSTANCES IN CLEARING TANK

The invention concerns a device for recuperating floating materials in sedimentation tanks in installations treating effluent water. The invention is characterized in that it is in the form of a rotary syphon implanted above the tank at the end thereof and comprising an immersed discharge pipe, including a longitudinal slot and closed at one end and open at the other, an immersed bucket welded on said discharge pipe, over the whole length thereof, and a gear motor periodically driving in rotation over 360° the discharge pipe bucket assembly such that the floating materials are recuperated at each rotation by said bucket whereof the position relative to the immersed pipe is determined so that the floating materials are discharged into said pipe through its longitudinal slot then evacuated by gravity through said immersed pipe open end.