18-02-2016 дата публикации
Номер: US20160049564A1
Принадлежит:
A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound. 1. A semiconductor device comprising:a base substrate; and a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and', 'a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound., 'a semiconductor chip on the base substrate, the semiconductor chip including,'}2. The semiconductor device of claim 1 , wherein the bonding structure further includes pure Ni.3. The semiconductor device of claim 1 , wherein{'sub': '3', 'the Ag—Sn compound includes AgSn, and'}{'sub': 3', '4, 'the Ni—Sn compound includes NiSn.'}4. The semiconductor device of claim 3 , wherein the bonding structure includes{'sub': 3', '3', '4, 'an intermediate layer including the AgSn and the NiSn,'}a first Ni layer between the intermediate layer and the first layer structure, anda second Ni layer between the intermediate layer and the second layer structure.5. The semiconductor device of claim 3 , wherein the Ni—Sn compound further includes NiSn.6. The semiconductor device of claim 1 , wherein the Ag content in the bonding structure is about 0.5 wt % to about 23.1 wt %.7. The semiconductor device of claim 1 , wherein the semiconductor device portion includes a light-emitting device portion.8. The semiconductor device of claim 7 , whereinthe first layer ...
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