Single Junction CIGS/CIS Solar Module

A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

InP-basierte Hochtemperaturlaser mit InAsP-Quantenschachtschichten und Sperrschichten aus Ga<SUB>x</SUB>(AIIn)<SUB>1-x</SUB>P

Quarzbootverfahren und Einrichtung für Dünnschicht-Wärmebehandlung

Es wird ein Verfahren zum Lagern von mehreren ebenen Substraten in einem rohrförmigen Ofen zum Durchführen eines Wärmebehandlungsprozesses offenbart. Das Verfahren verwendet eine Bootvorrichtung mit einem unteren Rahmen, der zwei Längenabschnitte und einen ersten Breitenabschnitt, einen zweiten Breitenabschnitt und ein oder mehrere mittlere Elemente, die zwischen den zwei Längenabschnitten verbunden sind, umfasst. Ferner umfasst das Verfahren das Montieren eines abnehmbaren ersten gerillten Stabs jeweils an dem ersten Breitenabschnitt, dem zweiten Breitenabschnitt und jedem von dem einem oder den mehreren mittleren Elementen, wobei jeder erste gerillte Stab erste mehrere Rillen aufweist, die durch eine erste räumliche Konfiguration gekennzeichnet sind. Das Verfahren umfasst weiterhin das Einsetzen von einem oder zwei Substraten von mehreren ebenen Substraten in jede Rille in der Bootvorrichtung bei einem Abstand getrennt.

Single Junction CIGS/CIC Solar Module

Ein Dünnfilm-Photovoltaikmodul mit hoher Effizienz wird auf einem Substrat gebildet. Das Photovoltaikmodul weist eine Mehrzahl streifenförmigen Photovoltaikzellen auf, die elektrisch miteinander gekoppelt sind physisch parallel zu der Längsseite angeordnet sind, nebeneinander über die Breite hinweg. Jede Zelle weist ein Barrierematerial auf, das über der Oberfläche liegt, und eine erste Elektrode, die über dem Barrierematerial liegt. Jede Zelle weist ferner einen Absorber auf, der über der ersten Elektrode liegend gebildet ist. Das Absorbermaterial weist ein Kupfer-Gallium-Indium-Diselenid-Verbundmaterial auf, das durch eine Energie-Bandlücke von ungefähr 1 eV bis 1,1 eV charakterisiert ist. Jede Zelle weist zusätzlich ein Puffermaterial auf, das über dem Absorber liegt und ein Doppelschicht-Zinkoxid-Material, das eine transparente Schicht mit hohem spezifischen Widerstand umfasst, die über dem Puffermaterial liegt und eine transparente Schicht mit einem niedrigen spezifischen Widerstand ...

Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht

Single junction CIGS/CIS solar module

A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

Strain compensating structure to reduce oxide-induced defects in semiconductor devices

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

Material systems for semiconductor tunnel-junction structures

The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

DEEP QUANTUM WELL ELECTRO-ABSORPTION MODULATOR AND ELECTRO-ABSORPTION MODULATION METHOD, CAPABLE OF INCREASING EXTINCTION RATIO

PURPOSE: A deep quantum well electro-absorption modulator and an electro-absorption modulation method are provided to increase quantum well absorption by forming a double well structure. CONSTITUTION: A GaAs barrier layer(210) provides a reference level of zero indium content at a top of an InGaAs quantum well(220). The InGaAs quantum well is a high-strained quantum well. An embedded, deep, and ultra-thin quantum well(225) is embedded into the InGaAs quantum well in order to form a sub-well. The perturbation introduced by the embedded, deep, and ultra-thin quantum well lowers a first confined energy state(230) of a wave function(240) in the InGaAs quantum well to a second confined energy state(235). © KIPO 2007 ...

Monolithic segmented LED array architecture with transparent common N-contact

A light emitting diode (LED) array may include an epitaxial layer comprising a first pixel and a second pixel separated by an isolation region. A reflective layer may be formed on the epitaxial layer. A p-type contact layer may be formed on the reflective layer. The isolation region may have a width that is at least a width of a trench formed in a p-type contact layer.

Quartz boat method and apparatus for thin film thermal treatment

Verfahren und Vorrichtung, die eine verspannte Azo-Schicht und ein Grenzflächen-Fermi-Niveau-Pinning bei doppelseitigen Dünnfilm-PV-Zellen verwenden

Ein Verfahren zum Bilden einer doppelseitigen Dünnfilm-Photovoltaikzelle umfasst ein Bereitstellen eines Glassubstrats, das eine durch eine Zwischenschicht bedeckte Oberflächenregion aufweist, und ein Bilden einer Dünnfilm-Photovoltaikzelle auf der Oberflächenregion. Außerdem umfasst die Dünnfilm-Photovoltaikzelle eine über der Zwischenschicht liegende Anode, einen Absorber über der Anode und eine Fensterschicht und Kathode über dem durch eine Pufferschicht abgepufferten Absorber. Die Anode weist eine mit Aluminium dotierte Zinkoxidschicht (AZO-Schicht) auf, die eine erste Grenzfläche mit der Zwischenschicht und eine zweite Grenzfläche mit dem Absorber bildet. Die AZO-Schicht ist dazu konfiguriert, ein Fermi-Niveau-Pinning an der ersten Grenzfläche und ein Spannungsfeld von der ersten Grenzfläche zu der zweiten Grenzfläche zu bewirken.

Long-wavelength photonic device with GaAsSb quantum-well layer

The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y>=0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.

Light emitting device

DEEP QUANTUM WELL ELECTRO-ABSORPTION MODULATOR

PROBLEM TO BE SOLVED: To provide an electro-absorption modulator having an increased extinction ratio. SOLUTION: The electro-absorption modulator comprises a substrate and a plurality of semiconductor layers formed on the substrate, wherein one of the semiconductor layers comprises a first quantum well region having a first composition and a second quantum well region having a second composition, and the second quantum well region is embedded in the first quantum well region. COPYRIGHT: (C)2007,JPO&INPIT ...

Device, useful for performing reactive heat treatment of thin film photovoltaic devices, comprises furnace having a housing, first door unit, second door unit, support frame disposed within furnace and first group of many guide elements

Device comprises: a furnace having a housing (110) and associated heating- and cooling devices; a first door unit adapted to cover the first end having a first plate cover, which is oriented towards the inner volume; a second door unit adapted to cover the second end with a second plate cover, which is oriented to the inner volume; a support frame disposed within the furnace; and a first group of many guide elements (240) which are arranged in the vicinity of the first plate and a second group of many guide elements. Device comprises: a furnace having a housing (110) and associated heating- and cooling devices, where the housing includes an inner volume of a first end to a second end; a first door unit adapted to cover the first end having a first plate cover, which is oriented towards the inner volume, where the first plate is coupled to a first coiled tubing within the first door unit; a second door unit adapted to cover the second end with a second plate cover, which is oriented to the ...

InP-BASED HIGH-TEMPERATURE LASER HAVING InAsP QUANTUM WELL LAYER AND Gax(AlIn) l-xP BARRIER LAYER

PROBLEM TO BE SOLVED: To provide a laser oscillator having small threshold current, which operates properly at high temperatures. SOLUTION: A laser structure (100), that operates at a wavelength of 1.3μm in a high temperature, and its manufacturing method are provided. This laser structure has an InAsP quantum well layer. The quantum well layer (32) is sandwiched in between a first barrier layer (33) and a second barrier layer (34). The barrier layers (33) and (34) have a band gap energy higher than that of the quantum well layer (32). Further, each of the barrier layers (33) and (34) includes Gax(AlIn)1-xP(x=0). This substance has a band gap energy larger than those of conventional barrier layer substances, such as InGaP. Therefore, discontinuity of the conduction band becomes large, and high-temperature performance is improved, without increasing the threshold current of the laser structure (100). COPYRIGHT: (C)2004,JPO&NCIPI ...

Deep quantum well electro-absorption modulator

Method and apparatus for performing reactive thermal treatment of thin film pv material

Method of fabricating active layers in a laser utilizing InP-based active regions

A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P-P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.

Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region

Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

Auf InP basierter Hochtemperatur Laser mit InAsP Quantumtöpfen und Gax(AIIN) 1-xP Barriereschichten

Light emitting diode array

A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts.

Method and structure for deep well structures for long wavelength active regions

Method and structure for deep well structures for long wavelength active regions

Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht

SEGMENTED LED WITH EMBEDDED TRANSISTORS

A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate. 1. A device comprising:an epitaxial layer on a substrate;a first embedded transistor in a first region of the substrate; andand a second embedded transistor in a second region of the substrate, the first region and the second region separated by trench extending through at least a portion of the epitaxial layer.2. The device of claim 1 , wherein the first embedded transistor is coupled to a first light emitting diode (LED) and the second embedded transistor is coupled to a second LED.3. The device of claim 1 , further comprising:a first optical isolation layer between the epitaxial layer and the first region of the substrate; anda second optical isolation layer between the epitaxial layer and the second region of the substrate.4. The device of claim 1 , wherein the epitaxial layer comprises:a first semiconductor layer;an active region on the first semiconductor layer; anda second semiconductor layer on the active region.5. The device of claim 4 , wherein the trench extends through a portion of the first semiconductor layer.6. The device of claim 4 , wherein the trench extends through an entire thickness of the first semiconductor layer claim 4 , an entire thickness of the active region claim 4 , and a portion of the second semiconductor layer.7. The device of claim 1 , further comprising:a common contact layer on the ...

Verfahren zum Erhöhen einer maximalen Modulationsgeschwindigkeit einer Licht emittierenden Vorrichtung und Quantenmuldenstruktur für eine solche Lichtemittierende Vorrichtung

Eine Quantenmuldenstruktur für eine Licht emittierende Vorrichtung (100), die Quantenmuldenstruktur aufweisend: Barriereschichten (610 und 650) aus AlxGa1-xAs mit einem Aluminiumbruchteil x; eine Quantenmuldenschicht (630) aus InGaAs zwischen den Barrierenschichten (610 und 650); und eine Grenzflächenschicht (620 und 640) aus AlyGa1-yAs mit einem geringeren Aluminiumbruchteil y als der Aluminiumbruchteil x des AlxGa1-xAs der Barriereschichten (610 und 650) zwischen der Quantenmuldenschicht (630) und jeder der Barrierenschichten (610 und 650), wobei die Grenzflächenschicht (620 und 640) eine Dicke in dem Bereich von 0,1 nm bis 2 nm aufweist.

Verfahren zum Erhöhen einer maximalen Modulationsgeschwindigkeit einer Licht emittierenden Vorrichtung und Licht emittierende Vorrichtung mit erhöhter maximaler Modulationsgeschwindigkeit und Quantenmuldenstruktur derselben

Ein Verfahren zum Erhöhen der maximalen Modulationsgeschwindigkeit einer Licht emittierenden Vorrichtung (100), wobei das Verfahren folgende Schritte aufweist: Bilden von Barriereschichten (610 und 650) aus AlGaAs (Schritt 210); Bilden einer Quantenmuldenschicht (630) aus InGaAs zwischen den Barriereschichten (610 und 650) (Schritt 220); und Bilden einer Grenzflächenschicht (620 und 640) zwischen der Quantenmuldenschicht (630) und jeder der Barriereschichten (610 und 650) (Schritt 230).

Segmented LED with embedded transistors

A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.

Monolithic, segmented light emitting diode array

A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts.

Deep quantum well electro-absorption modulator

A method for forming a bifacial thin film photovoltaic cell and a thin film solar device

A method for forming a bifacial thin film photovoltaic cell includes providing a glass substrate having a surface region covered by an intermediate layer and forming a thin film photovoltaic cell on the surface region. Additionally, the thin film photovoltaic cell includes an anode overlying the intermediate layer, an absorber over the anode, and a window layer and cathode over the absorber mediated by a buffer layer. The anode comprises an aluminum doped zinc oxide (AZO) layer forming a first interface with the intermediate layer and a second interface with the absorber. The AZO layer is configured to induce Fermi level pinning at the first interface and a strain field from the first interface to the second interface.

Method and apparatus for performing reactive thermal treatment of thin film PV material

Monolithic segmented LED array architecture with islanded epitaxial growth

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

Quartz boat method and apparatus for thin film thermal treatment

A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.

Method and structure for deep well structures for long wavelength active regions

Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.

Lighting device, light emitting diode array and method of forming a lighting device

QUARTZ BOAT METHOD AND APPARATUS FOR THIN FILM THERMAL TREATMENT

A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance. 1. An apparatus for holding substrates for thermal treatment comprising:a frame fixture having a substantially rectangular prism shape, the frame fixture including a base frame, a top frame, side connection bars coupling the base frame and the top frame, the base frame having two width members and middle joint members connected between the two length members;a first grooved rod removably mounted on each of the two width members and each of the middle joint members, each first grooved rod including a first plurality of grooves for supporting planar substrates;a first grooved bar removably mounted on each of two width members of the top frame, each first grooved bar including a second plurality of grooves aligned with the first plurality of grooves for guiding the plurality of planar substrates into the apparatus; anda rack structure configured to be a mechanical support of the frame fixture in a loading position inside a furnace for subjecting the plurality of planar substrates in the first configuration to one or more reactive thermal treatment processes.2. The apparatus of wherein the frame fixture and the first grooved rod and the first grooved bar comprise quartz.3. The apparatus of ...

Method and structure for deep well structures for long wavelength active regions

Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.

InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP

The invention provides a laser structure that operates at a wavelength of 1.3 mum and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1-xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The method comprises forming barrier layers of Al_xGa_1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

METHOD FOR FORMING LONG WAVELENGTH INDIUM/GALLIUM/ ARSENIC NITRIDE (InGaAsN) ACTIVE REGION

PROBLEM TO BE SOLVED: To provide a method for mass producing a high optical quality light emitting element having an InGaAsN active layer economically by OMVPE. SOLUTION: A method for manufacturing a long wavelength light emitting element (100) comprises steps for arranging a substrate (220) supporting an InGaAsN film in an OMVPE reaction furnace (210), supplying a group III-V precursor substance mixture (214) containing arsine, dimethylhydrazine, alkyl gallium, alkyl indium and carrier gas where arsine and dimethylhydrazine are group V precursor substance materials and the percentage of dimethylhydrazine is substantially higher than the percentage of arsine to the reaction furnace, and applying such a pressure as a nitrogen concentration causing the emission of light having a wavelength longer than 1.2 μm is extracted from dimethylhydrazine and formed on a substrate to the reaction furnace (210). COPYRIGHT: (C)2004,JPO ...

Electroabsorption modulator

The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

Method and structure for processing thin film PV cells with improved temperature uniformity

An apparatus for reactive thermal treatment of thin film photovoltaic devices includes a furnace tube including an inner wall extended from a first end to a second end. The apparatus further includes a gas supply device coupled to the second end and configured to fill one or more working gases into the furnace tube. Additionally, the apparatus includes a cover configured to seal the furnace tube at the first end and serve as a heat sink for the one or more working gases. Furthermore, the apparatus includes a fixture mechanically attached to the cover. The fixture is configured to load an array of substrates into the furnace tube as the cover seals the furnace tube. Moreover, the apparatus includes a crescent shaped baffle member disposed seamlessly at a lower portion of the inner wall for blocking a convection current of the one or more working gases cooled by the cover.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The method comprises forming barrier layers of Al_xGa_1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

METHOD AND APPARATUS FOR PERFORMING REACTIVE THERMAL TREATMENT OF THIN FILM PV MATERIAL

An apparatus for performing reactive thermal treatment of thin film photovoltaic devices includes a furnace having a tubular body surrounded by heaters and cooling devices. The apparatus includes cooled doors at ends of the furnace separated from a central portion of the furnace by baffles. The cooled doors facilitate increased convection within the furnace and improve temperature uniformity. 1. An apparatus for performing reactive thermal treatment of thin film photovoltaic devices , the apparatus comprising:a furnace having a body and associated heating and cooling devices, the body enclosing an interior volume from a first end to a second end;a first door structure configured to cover the first end with a first plate facing the interior volume, the first plate being coupled to a first coil pipe within the first door structure;a second door structure configured to cover the second end with a second plate facing the interior volume, the second plate being coupled to a second coil pipe within the second door structure;a rack fixture disposed within the furnace, the rack fixture capable of supporting an array of substrates in the interior volume; anda first plurality of baffle members disposed in vicinity of the first plate and a second plurality of baffle members disposed in vicinity of the second plate, the first plurality of baffle members and second plurality of baffle members controlling interior convection within the interior volume.2. The apparatus of wherein the body comprises a tubular body.3. The apparatus of wherein the first plurality of baffle members and the second plurality of baffle members comprise disk shaped baffle members coupled to the rack fixture.4. The apparatus of further including crescent shaped baffle members having a width and an arc length greater than a half perimeter of the tubular body claim 3 , and being disposed on a lower half of the tubular body near the first end and the second end.5. The apparatus of wherein the disk shaped ...

Quartz boat method and apparatus for thin film thermal treatment

LIGHT EMITTING DIODE ARRAY

A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts. 1. A device comprising:a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer;a continuous wavelength converting layer disposed on the continuous conductivity layer;a plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer; andone or more second contacts that are electrically connected to the continuous conductivity layer, the number of second contacts being less than the number of first contacts.2. The device of claim 1 , wherein each of the pixels has a width between 100 and 500 microns.3. The device of claim 1 , further comprising an optical isolation material formed in one of a plurality of trenches separating adjacent segments of the segmented conductivity layer from each another.4. The device of claim 3 , wherein the optically isolating material ...

GaAs-BASE LONG WAVELENGTH LASER INCORPORATING TUNNEL JUNCTION STRUCTURE

PROBLEM TO BE SOLVED: To provide a light emitting device usable for a GaAs base laser having a tunnel junction structure of a small voltage drop. SOLUTION: The light emitting device of the present invention is characterized by: a substrate (120) made of GaAs; an active region (112) made up of an n-type gap layer (114) and a p-type gap layer (116); and a tunnel junction structure (102) made up of a p-type tunnel junction layer (106) adjoining the p-type gap layer, an n-type tunnel junction layer (104), and a tunnel junction between the p-type and n-type tunnel junction layers; the p-type tunnel junction layer (106) having a layer made of a p-type first semiconductor material including gallium and arsenic and the n-type tunnel junction layer (104) having a layer made of a n-type second semiconductor material including indium, gallium and phosphor. COPYRIGHT: (C)2005,JPO&NCIPI ...

MONOLITHIC SEGMENTED LED ARRAY ARCHITECTURE WITH ISLANDED EPITAXIAL GROWTH

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall. 1. A device comprising:a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer;a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region; anda wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.2. The device of claim 1 , wherein the first sidewall and the second sidewall comprise portions of the epitaxial layer formed in trenches etched into a sapphire substrate.3. The device of claim 1 , wherein the epitaxial layer comprises:a first semiconductor layer;an active region on the first semiconductor layer; anda second semiconductor layer on the active region.4. The device of claim 3 , wherein the first semiconductor layer comprises an n-type doped Type III-nitride and the second semiconductor layer a p-type doped III-nitride.5. The device of claim 3 , wherein the active region comprises a partially doped or undoped Type III-nitride.6. The device of claim 3 , wherein the active region extends beyond an outer edge of at least one of the first isolation region and the second isolation region.7. The device of claim 1 , wherein the first isolation region and the second isolation region comprise a dielectric material.8. The device of claim 1 , wherein the epitaxial layer comprises a Type III-nitride.9. The device of claim 1 , wherein the first sidewall is aligned with the first isolation region and the second sidewall is aligned with ...

Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region

The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III-V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 mum is deposited over the substrate wafer.

Material systems for semiconductor tunnel-junction structures

The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

Active region of a light emitting device optimized for increased modulation speed operation

In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensating structure comprises a strain compensating layer adjacent an oxide-forming layer. The strain compensating layer compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer.

Deep quantum well electro-absorption modulator

Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

Quartz Boat Method and Apparatus for Thin Film Thermal Treatment

A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance. 1. A method of holding a plurality of planar substrates for thermal treatment comprising:providing a tube shaped furnace having a first end and a second end, the tube shaped furnace being surrounded by a plurality of heaters for conducting a thermal treatment process, the first end having a door;providing a boat fixture having a base frame coupled to a top frame, the base frame including two length portions and a first width portion, a second width portion, and at least one middle member connected between the two length portions;mounting a grooved member on the first width portion, the second width portion, and the at least one middle member, each grooved member having a plurality of grooves;inserting a plurality of planar substrates into the boat fixture so that the grooved member on the first width portion, the second width portion, and the at least one middle member, supports each of the planar substrates in a manner such that each substrate is separated from adjoining substrates by a desired distance;loading the boat fixture into the tube shaped furnace from the first end; andsubjecting the plurality of planar substrates to the thermal treatment process.2. The method of wherein the ...

MONOLITHIC SEGMENTED LED ARRAY ARCHITECTURE WITH TRANSPARENT COMMON N-CONTACT

A light emitting diode (LED) array may include an epitaxial layer comprising a first pixel and a second pixel separated by an isolation region. A reflective layer may be formed on the epitaxial layer. A p-type contact layer may be formed on the reflective layer. The isolation region may have a width that is at least a width of a trench formed in a p-type contact layer. 1. A device comprising:a trench in a p-type contact layer and a reflective layer, the trench exposing a first surface of an epitaxial layer;an isolation region in the epitaxial layer aligned with the trench; anda common n-type contact layer on a second surface of the epitaxial layer distal to the first surface.2. The device of claim 1 , wherein the epitaxial layer comprises a first pixel and a second pixel separated by the isolation region.3. The device of claim 2 , wherein the first pixel and the second pixel have a width of approximately 25 μm to approximately 300 μm.4. The device of claim 2 , wherein the isolation region electrically and optically isolates the first pixel from the second pixel.5. The device of claim 1 , wherein the isolation region extends through an active region in the epitaxial layer.6. The device of claim 1 , further comprising:a wavelength converting layer on the common n-type contact layer.7. The device of claim 1 , wherein the isolation region comprises one or more protons of helium claim 1 , argon claim 1 , and hydrogen.8. The device of claim 1 , wherein the isolation region has a width of approximately 1 μm to approximately 100 μm.9. A light emitting diode (LED) array comprising:a trench in a p-type contact layer and a reflective layer, the trench exposing a first surface of an epitaxial layer;a first pixel and a second pixel in the epitaxial layer separated by an isolation region aligned with the trench; anda common n-type contact layer on a second surface of the epitaxial layer distal to the first surface.10. The LED array of claim 9 , wherein the isolation region ...

Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells

A method for forming a bifacial thin film photovoltaic cell includes providing a glass substrate having a surface region covered by an intermediate layer and forming a thin film photovoltaic cell on the surface region. Additionally, the thin film photovoltaic cell includes an anode overlying the intermediate layer, an absorber over the anode, and a window layer and cathode over the absorber mediated by a buffer layer. The anode comprises an aluminum doped zinc oxide (AZO) layer forming a first interface with the intermediate layer and a second interface with the absorber. The AZO layer is configured to induce Fermi level pinning at the first interface and a strain field from the first interface to the second interface.

GaAs-based long-wavelength laser incorporating tunnel junction structure

The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.

LONG-WAVELENGTH PHOTONICS DEVICE INCLUDING GaAsSb QUANTUM WELL LAYER

PROBLEM TO BE SOLVED: To provide a long-wavelength photonics device having a low threshold current, a stabilized operation wavelength, and a high quantum efficiency. SOLUTION: The long-wavelength photonics device (100) includes an active layer (106) which comprises at least one quantum well layer (116) formed of an InyGa1-yAsSb quantum well layer material (y≥0), and barrier layers (114 and 118) in the number corresponding to that of the quantum well layers, each of which is formed of a barrier layer material including gallium and phosphorus. The barrier layer material has a conduction band energy level higher than that of the quantum well layer material and has a valence band energy level lower than that of the quantum well layer material. COPYRIGHT: (C)2003,JPO ...

Nanowire enhanced transparent conductive oxide for thin film photovoltaic devices

A thin-film photovoltaic devices includes transparent conductive oxide which has embedded within it nanowires at less than 2% nominal shadowing area. The nanowires enhance the electrical conductivity of the conductive oxide.

METHOD AND APPARATUS FOR SENSOR ORIENTATION DETERMINATION

Some embodiments include a method and apparatus which obtains sensor data associated with a vehicle. The sensor data includes three-dimensional acceleration data and three-dimensional rotation data, with respect to a sensor coordinate system. A gravity vector is obtained, and it is determined when the vehicle starts moving. Acceleration direction is used as a forward direction of the vehicle. It is determined from the rotation data when the vehicle changes direction, the rotation data indicating two different directions. The gravity vector is used to distinguish which is an upward direction by selecting directions the direction which has larger angle with respect to the gravity vector as the upward direction. The forward direction and upward direction are used to determine a rightward direction. The forward direction, upward direction and rightward direction represent the vehicle coordinate system. The orientation of the apparatus with respect to the orientation of the vehicle is determined. 129-. (canceled)30. An apparatus , comprising:at least one processor; andat least one memory including computer program code, the at least one memory and computer program code configured to, with the at least one processor, cause the apparatus at least to:obtain sensor data from at least one motion sensor located on-board a vehicle, said at least one motion sensor comprising an accelerometer and a gyroscope, said motion sensor having a sensor coordinate system and said vehicle having a vehicle coordinate system, said sensor data comprising three-dimensional acceleration data from the accelerometer and three-dimensional rotation data from the gyroscope with respect to the sensor coordinate system;sample a series of acceleration data from the accelerometer and rotation data from the gyroscope;obtain a gravity vector on the basis of the series of acceleration data;remove the gravity vector from the acceleration data to obtain linear acceleration data;determine by analyzing the ...

Method and apparatus for sensor orientation determination

There are disclosed various methods and apparatuses for sensor orientation determination in a vehicle. In some embodiments the method comprises obtaining sensor data from at least one motion sensor associated with a vehicle, said sensor data comprising three-dimensional acceleration data from an accelerometer and three-dimensional rotation data from a gyroscope with respect to a sensor coordinate system. A gravity vector is obtained and it is determined from the acceleration data and rotation data when the vehicle starts moving in straight line. Acceleration direction indicated by acceleration data obtained after the determining indicated that the vehicle has started moving in straight line is used as a forward direction of the vehicle. It is determined from the rotation data when the vehicle changes direction, the rotation data indicating two different directions. The gravity vector is used to distinguish from the two different directions which is an upward direction of the vehicle by selecting from the two different directions that direction which has larger angle with respect to the gravity vector as the upward direction. The forward direction and upward direction are used to determine a rightward direction, said forward direction, upward direction and rightward direction representing the vehicle coordinate system. The orientation of the apparatus with respect to the orientation of the vehicle is determined from the vehicle coordinate system and the sensor coordinate system.

Material systems for semiconductor tunnel-junction structures in light emitting devices

A light-emitting device comprising a tunnel junction structure (302) having a p-type tunnel junction layer (306) of a first semiconductor material, an n-type tunnel junction layer (304) of a second semiconductor material and a tunnel junction (310) between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

Segmented led with embedded transistors

A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.

Active region of a light emitting device optimized for increased modulation speed operation

In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers (302,306,310,314) of a quantum well structure (300) for a light emitting device are formed (402) with varying barrier energy heights. Quantum well layers (304,308,312) of the quantum well structure are formed (404) between the barrier layers.

Long-wavelength photonic device with GaAsSb quantum-well layer

The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises In y Ga 1-y AsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.

Monolithic segmented LED array architecture with islanded epitaxial growth

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).

Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).

Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The method comprises forming barrier layers of Al x Ga 1-x As, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

Monolithic Segmented LED Array Architecture With Islanded Epitaxial Growth

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(AIIN) 1-xP

The present invention provides a laser structure (100) that operates at a wavelength of 1.3µm and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (33) and a second barrier layer (34). Each barrier layer (33) (34) exhibits a higher bandgap energy than the quantum well layer (32). Also, each barrier layer (33) (34) comprises Ga x (AlIn) 1-x P in which x ≥ 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure (100).

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The method comprises forming barrier layers (610 and 650) of AlxGal-xAs, forming a quantum well layer (630) of InGaAs between the barrier layers, and forming an interfacial layer (620) between the quantum well layer and each of the barrier layers.

Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region

Several methods for producing an active region (130) for a long wavelength light emitting device (100) are disclosed. In one embodiment, the method comprises placing a substrate (220) in an organometallic vapor phase epitaxy (OMVPE) reactor (210), the substrate (220) for supporting growth of an indium gallium arsenide nitride (InGaAsN) film (132), supplying to the reactor a group-III-V precursor mixture (214) comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor (210) to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2µm is extracted from the dimethylhydrazine and deposited on the substrate (220).

Method of fabricating active layers in a laser utilizing InP-based active regions

A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P-P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.