METHOD FOR INCREASING MAXIMUM MODULATION SPEED OF A LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE WITH INCREASED MAXIMUM MODULATION SPEED AND QUANTUM WELL STRUCTURE THEREOF

The method comprises forming barrier layers (610 and 650) of AlxGal-xAs, forming a quantum well layer (630) of InGaAs between the barrier layers, and forming an interfacial layer (620) between the quantum well layer and each of the barrier layers.