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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 38703. Отображено 100.
05-01-2012 дата публикации

Semiconductor optical amplifier

Номер: US20120002271A1
Автор: Hideki Watanabe, Hiroyuki Yokoyama, Masao Ikeda, Masaru Kuramoto, Rintaro Koda, Takao Miyajima, Tomoyuki Oki
Принадлежит: Sony Corp, Tohoku University NUC

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W out , and W in , W out >W in is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

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Номер записи: 1
05-01-2012 дата публикации

Non-focal optical power limiting polymeric materials

Номер: US20120002312A1
Автор: Abhijit Sarkar, George Rayfield, Salma Rahman, Shamim Mirza
Принадлежит: Oxazogen Inc

This invention concerns a solid polymer matrix for use as non-focal optical power limiting polymeric materials. This matrix contains: (1) a hyperbranched polymer family, especially HB-PCS OR HB-PU, HB-PUSOX or PC; (2) one or more of RSA dye, MPA dye, azo dye or DMNPAA; 3) CNT and 4) a self-focusing component. This solid polymer matrix provides efficient protection from laser beam damage along with its self-focusing mechanism.

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Номер записи: 2
05-01-2012 дата публикации

Nano-imprint mold

Номер: US20120003348A1
Автор: Masaki Yanagisawa, Yukihiro Tsuji
Принадлежит: Sumitomo Electric Industries Ltd

A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body.

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Номер записи: 3
20-11-2016 дата публикации

Устройство для регистрации субволновых частиц

Номер: RU0000166253U1
Автор: Игорь Владиленович Минин, Олег Владиленович Минин
Принадлежит: Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" (СГУГиТ)

Устройство для регистрации субволновых частиц, состоящее из последовательно расположенных источника излучения преимущественно плоской волны, устройства субволновой фокусировки излучения, регистрируемой субволновой частицы, расположенной в области фокуса устройства субволновой фокусировки излучения и устройства регистрации рассеянного поля регистрируемой частицы, отличающееся тем, что устройство субволновой фокусировки излучения выполнено в виде фотонного кристалла, имеющего прямоугольную входную и выходную апертуры, при этом вдоль оптической оси фотонного кристалла выполнено субволновое отверстие с длиной не более длины фотонного кристалла и доходящей до его фокусной плоскости, а градиент эффективного показателя преломления фотонного кристалла в поперечном направлении выполнен спадающим к его краям. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 166 253 U1 (51) МПК G01N 21/49 (2006.01) G01N 15/10 (2006.01) B82Y 20/00 (2011.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ТИТУЛЬНЫЙ (21)(22) Заявка: ЛИСТ ОПИСАНИЯ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ 2016122837/28, 08.06.2016 (24) Дата начала отсчета срока действия патента: 08.06.2016 (45) Опубликовано: 20.11.2016 Бюл. № 32 1 6 6 2 5 3 R U (57) Формула полезной модели Устройство для регистрации субволновых частиц, состоящее из последовательно расположенных источника излучения преимущественно плоской волны, устройства субволновой фокусировки излучения, регистрируемой субволновой частицы, расположенной в области фокуса устройства субволновой фокусировки излучения и устройства регистрации рассеянного поля регистрируемой частицы, отличающееся тем, что устройство субволновой фокусировки излучения выполнено в виде фотонного кристалла, имеющего прямоугольную входную и выходную апертуры, при этом вдоль оптической оси фотонного кристалла выполнено субволновое отверстие с длиной не более длины фотонного кристалла и доходящей до его фокусной плоскости, а градиент эффективного показателя преломления фотонного кристалла в поперечном ...

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Номер записи: 4
28-09-2018 дата публикации

Инжекционный лазер с переключаемым спектром генерации

Номер: RU0000183644U1
Автор: Дмитрий Александрович Веселов, Никита Александрович Пихтин, Сергей Олегович Слипченко
Принадлежит: Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук

Полезная модель относится к квантовой электронике. Инжекционный лазер с переключаемым спектром генерации включает подложку, на одной стороне которой сформирован сплошной омический контакт, а на другой стороне подложки выращена полупроводниковая гетероструктура, ограниченная сколотыми гранями, содержащая оптический резонатор, при этом гетероструктура содержит последовательно нанесенные на подложку слой эмиттера n-типа проводимости, первый волноводный слой, активную область, содержащую по меньшей мере один квантово-размерный активный слой в виде квантовой ямы, второй волноводный слой, слой эмиттера p-типа проводимости, на внешний поверхности которого нанесены первый и второй омические контакты, разделенные диэлектрической областью шириной не менее 2 мкм и образующие секцию управления и секцию накачки лазера. Длина L резонатора, длина L p секции накачки и толщина d слоя квантовой ямы, обеспечивающая наличие как минимум двух уровней размерного квантования в активной области, удовлетворяют определенным соотношениям. Технический результат полезной модели заключается в расширении спектра лазерной генерации до 100 нм. 5 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 183 644 U1 (51) МПК H01S 5/34 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01S 5/0607 (2018.05); H01S 5/3412 (2018.05); H01S 5/125 (2018.05) (21)(22) Заявка: 2018107623, 01.03.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 01.03.2018 (45) Опубликовано: 28.09.2018 Бюл. № 28 2548034 C2, 10.04.2015. WO 2009019507 A1, 12.02.2009. RU 2230410 C1, 10.06.2004. (54) ИНЖЕКЦИОННЫЙ ЛАЗЕР С ПЕРЕКЛЮЧАЕМЫМ СПЕКТРОМ ГЕНЕРАЦИИ (57) Реферат: Полезная модель относится к квантовой второй волноводный слой, слой эмиттера p-типа электронике. Инжекционный лазер с проводимости, на внешний поверхности которого переключаемым спектром генерации включает нанесены первый и второй омические контакты, ...

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Номер записи: 5
01-10-2019 дата публикации

Одночастотный квантово-каскадный лазер среднего инфракрасного диапазона

Номер: RU0000192784U1
Автор: Владимир Ильич Кучинский, Владислав Викторович Дюделев, Григорий Семенович Соколовский, Сергей Николаевич Лосев
Принадлежит: Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук

Квантовый каскадный лазер на основе соединений А3В5 содержит подложку (2) из InP n-типа проводимости, на которой последовательно сформированы буферный слой (3) InP n-типа проводимости, слой (4) нижней волноводной обкладки, на котором выполнен полосок (5). Полосок (5) включает последовательно сформированные квантово-каскадную активную область (6), дифракционную решетку (7) распределенной обратной связи, слой (8) верхней волноводной обкладки и верхний контактный слой (9) n-типа проводимости. На тыльной стороне подложки (2) и на верхнем контактном слое нанесены соответственно металлические контакты (1) и (10). Штрихи (11) решетки (7) распределенной обратной связи выполнены в форме эквидистантных дуг концентрических окружностей, при этом радиус Rпервой от центра окружности равен не менее 20⋅λ, а полосок (5) выполнен в форме прямоугольной трапеции, основания которой являются передней и задней выходными гранями (12) и (13) лазера, а боковые стороны представляют собой отрезки прямых, проведенных из центра концентрических окружностей, дугами которых являются штрихи (11) дифракционной решетки (7) распределенной обратной связи. В квантово-каскадном лазере исключен срыв одночастотной генерации из-за отражения от плоских выходных граней лазера. 1 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 192 784 U1 (51) МПК H01S 5/12 (2006.01) H01S 5/343 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01S 5/12 (2019.05); H01S 5/3438 (2019.05) (21)(22) Заявка: 2019122072, 10.07.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 01.10.2019 Адрес для переписки: 194021, Санкт-Петербург, ул. Политехническая, 26, ФТИ им. А.Ф. Иоффе, пат.-лицензионная служба, Белову В.И. (56) Список документов, цитированных в отчете о поиске: JP 2018046128 A, 22.03.2018. US 20150311665 A1, 29.10.2015. US 20170033536 A1, 02.02.2017. RU 181198 U1, 05.07.2018. U 1 1 9 2 7 8 4 R U (3) InP n-типа проводимости, слой (4) ...

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Номер записи: 6
12-01-2012 дата публикации

Single Mode Photonic Circuit Architecture and a New Optical Splitter Design Based on Parallel Waveguide Mode Conversion

Номер: US20120008897A1
Автор: Bing Li
Принадлежит: Individual

The new single mode circuit (SMC) architecture is invented for photonic integrated circuits (PIC). This architecture allows using multimode waveguides or structures to construct a single mode operated PIC. The multimode sections used in such SMC based PIC possess strong lateral confinement so that the PIC can have high circuit density and high optical performance at the same time. A parallel mode converter structure is also invented here. Based on this parallel mode converter, a low loss optical splitter can be constructed for high index contrast waveguide system.

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Номер записи: 7
19-01-2012 дата публикации

Holographic mirror for optical interconnect signal routing

Номер: US20120014643A1
Автор: Alexandre M. Bratkovski, Michael Renne Ty Tan
Принадлежит: Hewlett Packard Development Co LP

A holographic mirror 10 for re-directing an optical signal that includes a base 14 having an outer surface 16, and a plurality of discrete nano-structures 12 formed into the outer surface of the base. Each nano-structure has an out-of-plane dimension 20 that is within an order of magnitude of one or both in-plane dimensions 22. The plurality of nano-structures are configured in a repeating pattern with a predetermined spacing 18 between nano-structures for re-directing an optical signal.

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Номер записи: 8
26-01-2012 дата публикации

Surface emitting laser, light source, and optical module

Номер: US20120020383A1
Автор: Hitoshi Shimizu, Yasumasa Kawakita
Принадлежит: Furukawa Electric Co Ltd

A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

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Номер записи: 9
26-01-2012 дата публикации

Optics collection and detection system and method

Номер: US20120021525A1
Автор: Adrian Fehr, Nathaniel Joseph McCaffrey, Stephen Turner
Принадлежит: Pacific Biosciences of California Inc

Optics collection and detection systems are provided for measuring optical signals from an array of optical sources over time. Methods of using the optics collection and detection systems are also described.

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Номер записи: 10
02-02-2012 дата публикации

Optical Apparatus for Forming a Tunable Cavity

Номер: US20120027348A1
Автор: David A. Fattal, Jingjing Li, Marco Florentino, Raymond G. Beausoleil
Принадлежит: Hewlett Packard Development Co LP

An optical apparatus includes an optical fiber formed of a core surrounded by cladding, in which the optical fiber includes an end portion. In addition, an optical layer composed of a material having a relatively high refractive index is positioned on the end portion, in which the optical layer includes a non-periodic sub-wavelength grating positioned in optical communication with the core.

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Номер записи: 11
09-02-2012 дата публикации

Compositions Comprising QD Sol-Gel Composites and Methods for Producing and Using the Same

Номер: US20120032141A1
Автор: Arrelaine Dameron, Ethan Tsai
Принадлежит: HCF Partners LLP

The present invention provides OLEDs comprising cross-linked quantum dots and methods for producing and using the same.

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Номер записи: 12
09-02-2012 дата публикации

Optical force based biomolecular analysis in slot waveguides

Номер: US20120033915A1
Автор: Allen Yang, Brad Schmidt, David Erickson, Michal Lipson, Sean Moore
Принадлежит: CORNELL UNIVERSITY

An architecture for the handling and transport of nanoscopic matter in lab on a chip devices using optical forces. A slot waveguide is used to focus and harness optical energy to trap and transport nanoscale objects. The slot waveguide is a unique structure that has several advantageous features, such as high optical confinement, and enables nanoparticles to interact fully with a propagating optical mode.

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Номер записи: 13
16-02-2012 дата публикации

Illumination system comprising beam shaping element

Номер: US20120037943A1
Автор: Coen Adrianus Verschuren, Ferry Zijp
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

The invention relates to an illumination system ( 10 ) comprising a light emitting device ( 20 ) and a beam shaping element ( 30 ) for generating an angular distribution (φ) of the light emitted from the illumination system. The beam shaping element is configured for recycling at least a part of the light emitted from a light emitting surface ( 26 ) of the light emitting device via reflection back towards the light emitting surface. The illumination system further comprises a diffuser ( 40, 42 ) arranged substantially parallel to the light emitting surface for diffusing at least part of the recycled light. The diffuser is constituted of a translucent diffuser ( 40 ) and/or a diffusely reflective electrode layer ( 42 ) of the light emitting device. Limiting the angular distribution by recycling light, using the beam shaping element for recycling light via reflection, reduces glare when the illumination system is used in general lighting applications. The diffuser avoids that the recycled light is confined between the beam shaping element and the light emitting surface of the light emitting element. The recycling is preferably done via total internal reflection at the beam shaping element. The presence of the diffuser improves the efficiency of the illumination system.

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Номер записи: 14
16-02-2012 дата публикации

Dynamic nano-inscribing for continuous and seamless metal and polymer nanogratings

Номер: US20120038085A1
Автор: Lingjie Jay Guo, Se Hyun Ahn
Принадлежит: University of Michigan

Nanoscale grating structure can be utilized in many practical applications in optics, flat-panel displays and bio-sensors. A Dynamic Nano-Inscribing (Dynamic Nano-Inscribing) technique is disclosed for directly creating large-area, truly continuous nano-grating patterns in a variety of metal or polymer materials with feature size down to sub-50 nm and at very high speed (10 cm/sec). Dynamic Nano-Inscribing is carried out under either ambient temperature or with a brief heating time on the order of ten microseconds, which minimizes damage on UV or thermo-sensitive functional materials.

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Номер записи: 15
23-02-2012 дата публикации

Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device

Номер: US20120044481A1
Автор: Hiroshi Mori, Shintaro MORIMOTO, Yasuaki Nagashima
Принадлежит: Anritsu Corp

[Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device. [Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13 a with a gain wavelength λ 1 of about 1.55 μm and an active layer 13 b with a gain wavelength λ 2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ 1 and λ 2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ 2 is formed near the active layer 13 b with the short gain wavelength λ 2 and near a butt-joint coupling portion 19 between the active layers 13 a and 13 b, an upper electrode provided above the active layer 13 b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13 b when a driving current is applied to the active layer 13 a.

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Номер записи: 16
01-03-2012 дата публикации

Edge-emitting semiconductor laser

Номер: US20120051380A1
Автор: Marc Schillgalies, Stephan Lutgen, Uwe Strauss
Принадлежит: OSRAM Opto Semiconductors GmbH

The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body ( 10 ), which comprises a waveguide region ( 4 ), wherein the waveguide region ( 4 ) comprises a first waveguide layer ( 2 A), a second waveguide layer ( 2 B) and an active layer ( 3 ) arranged between the first waveguide layer ( 2 A) and the second waveguide layer ( 2 B) and serving for generating laser radiation ( 5 ), and the waveguide region ( 4 ) is arranged between a first cladding layer ( 1 A) and a second cladding layer ( 1 B) disposed downstream of the waveguide region ( 4 ) in the growth direction of the semiconductor body ( 10 ). The waveguide region ( 4 ) has a thickness d of 400 nm or less, and an emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction parallel to the layer plane of the active layer ( 3 ) and the emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction perpendicular to the layer plane of the active layer ( 3 ) differ from one another by less than a factor of 3.

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Номер записи: 17
08-03-2012 дата публикации

Semiconductor device

Номер: US20120056153A1
Автор: Eiji Muramoto, Maki Sugai, Shinji Saito, Shinya Nunoue
Принадлежит: Toshiba Corp

A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

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Номер записи: 18
08-03-2012 дата публикации

Semiconductor light emitting device and method for manufacturing same

Номер: US20120056232A1
Автор: Akira Fujimoto, Eishi TSUTSUMI, Koji Asakawa, Masaaki Ogawa, Ryota Kitagawa, Shinji Nunotani, Takanobu Kamakura
Принадлежит: Toshiba Corp

A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

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Номер записи: 19
08-03-2012 дата публикации

Semiconductor optical element

Номер: US20120056293A1
Автор: Kazuhisa Takagi
Принадлежит: Mitsubishi Electric Corp

A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

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Номер записи: 20
15-03-2012 дата публикации

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

Номер: US20120061645A1
Автор: James S. Speck, Roy B. Chung, Shuji Nakamura, Steven P. DenBaars, Zhen Chen
Принадлежит: UNIVERSITY OF CALIFORNIA

A high-power and high-efficiency light emitting device with emission wavelength (λ peak ) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

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Номер записи: 21
22-03-2012 дата публикации

Metamaterial Integrated Solar Concentrator

Номер: US20120067419A1
Автор: Sanjeet Das
Принадлежит: US Department of Navy

An optical device including a metamaterial layer having a negative index of refraction for at least one wavelength in the visible range of 400-700 nm, a photovoltaic cell, and an optical waveguide arranged between the metamaterial layer and the photovoltaic cell. The optical waveguide has a first face and second face arranged opposite the first face, the first face having a larger area than the second face, the metamaterial layer positioned at the first face of the optical waveguide and the photovoltaic cell positioned at the second face of the optical waveguide. The optical device can be a solar collector. The optical waveguide can have a trapezoidal cross section, with the side faces of the waveguide having an angle of tilt sufficient to ensure total internal reflection for all incidence angles within the metamaterial's acceptance cone.

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Номер записи: 22
22-03-2012 дата публикации

Multi-wavelength high output laser source assembly with precision output beam

Номер: US20120068001A1
Автор: David F. Arnone, Michael Pushkarsky
Принадлежит: Individual

A laser source assembly ( 210 ) for generating an assembly output beam ( 212 ) includes a first laser source ( 218 A), a second laser source ( 218 B), and a dispersive beam combiner ( 222 ). The first laser source ( 218 A) emits a first beam ( 220 A) having a first center wavelength, and the second laser source ( 218 B) emits a second beam ( 220 B) having a second center wavelength that is different than the first center wavelength. The dispersive beam combiner ( 222 ) includes a common area 224 that combines the first beam ( 220 A) and the second beam ( 220 B) to provide the assembly output beam ( 212 ). The first beam ( 220 A) impinges on the common area ( 224 ) at a first beam angle ( 226 A), and the second beam ( 220 B) impinges on the common area ( 224 ) at a second beam angle ( 226 B) that is different than the first beam angle ( 226 A). Further, the beams ( 220 A) ( 220 B) that exit from the dispersive beam combiner ( 222 ) are substantially coaxial, are fully overlapping, and are co-propagating.

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Номер записи: 23
29-03-2012 дата публикации

Alternating Bias Hot Carrier Solar Cells

Номер: US20120073657A1
Автор: Dale A. McNeill, Hussein S. El-Ghoroury, Selim E. Guncer
Принадлежит: Ostendo Technologies Inc

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

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Номер записи: 24
29-03-2012 дата публикации

Low loss broadband fiber coupler to optical waveguide

Номер: US20120076465A1
Автор: Christopher R. Doerr, Long Chen, Young Kai CHEN
Принадлежит: Alcatel Lucent USA Inc

An apparatus that comprises an optical-mode-converter. The optical-mode-converter includes a optical waveguide including a segment directly located on a substrate and a cantilevered segment located over said substrate and separated from said substrate by a cavity, and, said cantilevered segment includes a core surrounded by a cladding. The optical-mode-converter also includes a dielectric material filling said cavity and contacting said cantilevered segment over said cavity, wherein said dielectric material has a refractive index that is less than a refractive index of said cladding and that is no more than about 20 percent less than said refractive index of said cladding.

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Номер записи: 25
29-03-2012 дата публикации

Hierarchical chromonic structures

Номер: US20120077022A1
Автор: Cristin E. Moran, Hassan Sahouani, Sanat Mohanty
Принадлежит: 3M Innovative Properties Co

A method of making a chromonic structure comprises (a) preparing a first aqueous mixture comprising (i) a continuous water-soluble polymer phase and (ii) a discontinuous chromonic phase comprising a chromonic material, to form chromonic nanoparticles; (b) non-covalently crosslinking the resulting chromonic nanoparticles with a multivalent cation salt; (c) dispersing the resulting crosslinked chromonic nanoparticles in a water-soluble polymer phase to form a chromonic nanoparticle dispersion; and (d) preparing a second aqueous mixture comprising (i) the chromonic nanoparticle dispersion and (ii) a continuous chromonic phase comprising a chromonic material.

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Номер записи: 26
12-04-2012 дата публикации

Polymer layer on x-ray window

Номер: US20120087476A1
Автор: Brian Taylor, Jason Maynard, Keith Decker, Steven Liddiard
Принадлежит: Moxtek Inc

An x-ray window comprising a plurality of thin film layers stacked together, including a thin film layer and a polymer layer. The thin film layer can be diamond, graphene, diamond-like carbon, beryllium, and combinations thereof. The polymer layer can be a polyimide. A boron hydride layer may also be included.

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Номер записи: 27
19-04-2012 дата публикации

Methods and systems for optical focusing using negative index metamaterial

Номер: US20120091345A1
Автор: Abram G. Young, Delmar L. Barker, William R. Owens
Принадлежит: Raytheon Co

In an embodiment of methods and systems for optical focusing For laser guided seekers using negative index metamaterial, the methods and systems comprise a light focusing system comprising: a lens comprising a negative index metamaterial to focus at least one selected wavelength while defocusing other wavelengths, and a sensor upon which the lens focuses the selected wavelength.

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Номер записи: 28
19-04-2012 дата публикации

Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array

Номер: US20120093188A1
Автор: Mitsuhiro Ikuta
Принадлежит: Canon Inc

There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

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Номер записи: 29
19-04-2012 дата публикации

Multimode vertical-cavity surface-emitting laser arrays

Номер: US20120093189A1
Автор: David A. Fattal, Marco Fiorentino, Raymond G. Beausoleil
Принадлежит: Hewlett Packard Development Co LP

Various embodiments of the present invention are directed to monolithic VCSEL arrays where each VCSEL can be configured to lase at a different wavelength. In one embodiment, a monolithic surface-emitting laser array includes a reflective layer, a light-emitting layer ( 102 ), and a grating layer ( 112 ) configured with two or more non-periodic, sub-wavelength gratings. Each grating is configured to form a resonant cavity with the reflector, and each grating is configured with a grating pattern that shapes one or more internal cavity modes and shapes one or more external transverse modes emitted through the grating.

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Номер записи: 30
19-04-2012 дата публикации

Method and system for near-field optical imaging

Номер: US20120096601A1
Автор: Alexander A. Govyadinov, George Y. Panasyuk, John C. Schotland
Принадлежит: University of Pennsylvania Penn

A system and method for optically imaging a sample. The method and system uses a controlled scatterer of light positioned in the near field of a sample. The extinguished power from an incident field, which illuminates both the sample and the controlled scatterer, is then measured as a function of the controlled scatterer position and is used to mathematically reconstruct an image of the sample.

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Номер записи: 31
26-04-2012 дата публикации

Solar cell

Номер: US20120097228A1
Автор: Hirofumi Yoshikawa, Makoto Izumi, Tomohiro Nozawa, Yasutaka Kuzumoto
Принадлежит: Sharp Corp

A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

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Номер записи: 32
26-04-2012 дата публикации

Limiting strain relaxation in iii-nitride hetero-structures by substrate and epitaxial layer patterning

Номер: US20120097919A1
Автор: Anurag Tyagi, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Принадлежит: UNIVERSITY OF CALIFORNIA

A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension/along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.

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Номер записи: 33
26-04-2012 дата публикации

Long semiconductor laser cavity in a compact chip

Номер: US20120099613A1
Автор: Alex A. Behfar, Christian Stagarescu
Принадлежит: Individual

Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

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Номер записи: 34
03-05-2012 дата публикации

Group iii nitride semiconductor element and epitaxial wafer

Номер: US20120104433A1
Автор: Fumitake Nakanishi, Masaki Ueno, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

A primary surface 23 a of a supporting base 23 of a light-emitting diode 21 a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25 a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane S R3 shown in FIG. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33 a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in FIG. 5 ) and the (0001) plane of a well layer 37 a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

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Номер записи: 35
03-05-2012 дата публикации

High sensitivity localized surface plasmon resonance sensor and sensor system using same

Номер: US20120105857A1
Автор: Kyeong Seok Lee, Taek Sung Lee, Won Mok Kim
Принадлежит: Korea Advanced Institute of Science and Technology KAIST

The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.

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Номер записи: 36
10-05-2012 дата публикации

Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate

Номер: US20120112203A1
Автор: Koji Nishizuka, Takamichi Sumitomo, Takashi Kyono, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 17 cm −3 , and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

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Номер записи: 37
17-05-2012 дата публикации

Quantum Cascade Lasers with Electrically Tunable Emission Wavelengths

Номер: US20120120972A1
Автор: Gregory Belenky, John D. Bruno, Leon Shterengas, Mikhail Belkin, Mikhail V. Kisin, Richard L. Tober, Serge Luryi, Sergey Suchalkin
Принадлежит: Individual

The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

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Номер записи: 38
31-05-2012 дата публикации

Organic Optoelectronic Component and Method for Producing an Organic Optoelectronic Component

Номер: US20120132894A1
Автор: Andrew Ingle
Принадлежит: OSRAM Opto Semiconductors GmbH

In at least one embodiment of the organic optoelectronic component ( 1 ), the latter comprises a carrier ( 2 ) and a first electrode ( 11 ), which is mounted on the carrier ( 2 ). Furthermore, the component ( 1 ) contains at least one organic layer sequence ( 3 ) with at least one organic active layer ( 33 ). Furthermore, the component ( 1 ) comprises a second electrode ( 22 ), such that the organic layer sequence ( 3 ) is located between the first electrode ( 11 ) and the second electrode ( 22 ). At least one dark region ( 4 ) and at least one bright region ( 5 ) are formed in a lateral direction. In both the dark region ( 4 ) and the bright region ( 5 ), both the first electrode ( 11 ) and the second electrode ( 22 ) and also the organic layer sequence ( 3 ) are applied to the carrier ( 2 ) in places or over the entire surface. A first reflectivity of the dark region ( 4 ) differs from a second reflectivity of the bright region ( 5 ) by at most 15 percentage points.

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Номер записи: 39
07-06-2012 дата публикации

Reflection type display device

Номер: US20120140305A1
Автор: Hiroaki Shigeta, Yuhji Yashiro
Принадлежит: Sharp Corp

A reflection type display device ( 10 ) includes: a plasmon resonance layer ( 32 ) in which metal nanoparticles ( 80 ) are dispersed; a band-pass filter ( 40 ); a light shutter ( 20 ); and a silicon solar cell layer ( 50 a ) being provided close to the plasmon resonance layer ( 32 ). The band-pass filter ( 40 ) and the light shutter ( 20 ) are provided so as to overlap the plasmon resonance layer ( 32 ) in planar view. The reflection type display device ( 10 ) performs display in such a manner that: the metal nanoparticles ( 80 ) allow light having a specific wavelength to pass through; the light is then reflected by the band-pass filter ( 40 ); and the light shutter ( 20 ) adjusts an intensity of the light thus reflected.

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Номер записи: 40
21-06-2012 дата публикации

Brownian Microbarcodes for Bioassays

Номер: US20120157350A1
Автор: Jared C. Pache, Randall J. True
Принадлежит: Affymetrix Inc

Presented are encoded microparticles, methods of use in biological assays, and flexible, modular instrument systems for conducting a variety of biological assays using the encoded microparticles. The systems include various instrumentation components which are exchangeable and offer a single flexible platform on which a large number of different types of experiments and assays may be conducted including, for example, microarray analysis, encoded microparticle single and multiplex detection, tissue dissection and isolation, and other genetic analysis techniques.

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Номер записи: 41
28-06-2012 дата публикации

Lens, optoelectronic component comprising a lens and method for producing a lens

Номер: US20120162783A1
Автор: Bert Braune, Thomas Bemmerl, Ulrich Streppel
Принадлежит: OSRAM Opto Semiconductors GmbH

A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

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Номер записи: 42
28-06-2012 дата публикации

Transparent display backlight assembly

Номер: US20120163021A1
Автор: David D. Bohn, Derek Leslie Knee, Rod G. Fleck
Принадлежит: Microsoft Corp

In embodiments of a transparent display backlight assembly, a backlight panel is operable as a transparent panel, and a light source generates light that the backlight panel directs from the light source to illuminate a display panel of a display device. Light refraction features refract and scatter the light, where the light refraction features are spaced for approximate transparency of the backlight panel and to illuminate the display panel. An active diffuser can be implemented as an additional transparent panel and operable for activation to diffuse the light from the backlight panel that illuminates the display panel.

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Номер записи: 43
26-07-2012 дата публикации

Optical materials, optical components, and methods

Номер: US20120187367A1
Автор: John R. Linton, Patrick Landreman, Rohit Modi
Принадлежит: QD Vision Inc

An optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state. Further disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state, and wherein the optical material is at least partially encapsulated. Methods, optical materials, and devices are also disclosed.

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Номер записи: 44
02-08-2012 дата публикации

Thermally excited near-field source

Номер: US20120193536A1
Автор: Hendrik F. Hamann, James A. Lacey, Snorri Ingvarsson
Принадлежит: International Business Machines Corp

A high resolution material observation system includes an object having at least one spatial dimension sufficient to support production of near-field infrared emissions, a holder adapted to receive a sample to be observed, the holder further adapted to position the sample in the near-field infrared emissions, and a thermal excitation unit, adapted to be thermally coupled to at least one of the object and the sample. The thermal excitation unit is further adapted to causing black body radiation in either the object or the sample within the infrared spectrum.

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Номер записи: 45
02-08-2012 дата публикации

Frequency selective imaging system

Номер: US20120194713A1
Автор: Jeffrey H. Hunt
Принадлежит: Boeing Co

An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

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Номер записи: 46
02-08-2012 дата публикации

Polymeric dye for optical power limiting

Номер: US20120194932A1
Автор: Abhijit Sarkar, James P. Godschalx, Petar R. Dvornic
Принадлежит: Oxazogen Inc

This invention concerns a polymer coating composition for use as non-focal optical power limiting dye containing polymeric materials. This composition contains: (1) one or more Modified Polymers comprising a Polymer, such as a hyperbranched polymer family, especially HB—PCS, HB—PU, HB—PUSOX or PC with one or more of: a) reverse saturable dye (RSA), b) multi-photon absorption dye (MPA), c) an azo dye, or d) absorption dye, which dye is chemically bonded to the pendant groups of the Polymer (along its chain and/or termini) or which forms a part of the backbone of the Polymer; (2) carbon nanotubes (CNT) as optical power limiters (OPL); and (3) a self-focusing component. This Modified Polymer composition contains the dye incorporated into the polymer chain backbone or chemically bonded to the terminal groups at the ends or along the chain of the polymer, which provides efficient protection from laser beam damage along with its self-focusing mechanism.

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Номер записи: 47
09-08-2012 дата публикации

Display device using quantum-dot and fabrication method thereof

Номер: US20120200219A1
Автор: Jin Won Song
Принадлежит: QD SOLUTION

Provided are a display device in which a shape is not limited, the mounting and wiring of elements are not required, visibility, luminance, and the representation of a color are excellent, brightness is adjustable, production cost is low, and fabrication is easy, and a fabrication method thereof. Specifically, the display device includes: a substrate; a light emitting layer formed on the top of the substrate in a predetermined pattern and containing quantum-dots that receives external light to emit light; and a light emitting element providing the external light to the light emitting layer.

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Номер записи: 48
09-08-2012 дата публикации

Iii-nitride semiconductor laser device, and method of fabricating the iii- nitride semiconductor laser device

Номер: US20120202304A1
Автор: Koji Katayama, Masahiro Adachi, Masaki Ueno, Shinji Tokuyama, Takamichi Sumitomo, Takao Nakamura, Takashi Kyono, Takatoshi Ikegami, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

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Номер записи: 49
16-08-2012 дата публикации

Light emitting diode comprising semiconductor nanocrystal complexes

Номер: US20120205621A1
Автор: Kwang-Ohk Cheon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.

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Номер записи: 50
16-08-2012 дата публикации

Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus

Номер: US20120205680A1
Автор: Abe Hiroaki, FUJIMOTO Tsuyoshi, Kentaro Aoshima, Kudou Hisashi, Yuji Furushima
Принадлежит: Sony Corp

A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

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Номер записи: 51
30-08-2012 дата публикации

Nitride based light emitting device with excellent crystallinity and brightness and method of manufacturing the same

Номер: US20120217470A1
Автор: JOO Jin, Kun Park
Принадлежит: Semimaterials Co Ltd

Disclosed is a nitride-based light emitting device having an inverse p-n structure in which a p-type nitride layer is first formed on a growth substrate. The light emitting device includes a growth substrate, a powder type seed layer for nitride growth formed on the growth substrate, a p-type nitride layer formed on the seed layer for nitride growth, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The p-type nitride layer is first formed on the growth layer and the n-type ZnO layer having a relatively low growth temperature is then formed thereon instead of an n-type nitride layer, thereby providing excellent crystallinity and high brightness. A method of manufacturing the same is also disclosed.

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Номер записи: 52
30-08-2012 дата публикации

Nitride based light emitting device with excellent crystallinity and brightness and method of manufacturing the same

Номер: US20120217536A1
Автор: JOO Jin, Kun Park
Принадлежит: Semimaterials Co Ltd

Disclosed is a nitride-based light emitting device capable of improving crystallinity and brightness. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, a p-type nitride layer formed on the lattice buffer layer, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing generation of dislocations during nitride growth. A method of manufacturing the same is also disclosed.

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Номер записи: 53
06-09-2012 дата публикации

Optical coupler between planar multimode waveguides

Номер: US20120224813A1
Автор: Christopher Doerr, Long Chen
Принадлежит: Alcatel Lucent USA Inc

Various exemplary embodiments relate to an optical waveguide coupler including: a first optical waveguide including a first area and a tapered area having a tapered width; a second optical waveguide including a first area and a tapered area having a tapered width; wherein the first area of the of the second optical waveguide overlaps the tapered area of the first optical wave guide, and wherein the tapered area of the second optical waveguide overlaps the first area of the first optical waveguide.

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Номер записи: 54
06-09-2012 дата публикации

Sol-gel based antireflective (ar) coatings with controllable pore size using organic nanocrystals and dendrimers

Номер: US20120225215A1
Автор: Nikhil D. Kalyankar
Принадлежит: Intermolecular Inc

Embodiments of the invention relate generally to methods and compositions for forming porous low refractive index coatings on substrates. In one embodiment, a method for forming a porous coating on a substrate is provided. The method comprises coating a substrate with a sol-gel composition, comprising at least one porosity forming agent, wherein the porosity forming agent is selected from at least one of dendrimers and organic nanocrystals and removing the at least one porosity forming agent to form the porous coating. Use of at least one of the dendrimers and organic nanocrystals leads to the formation of stable pores with larger volume fraction in the film. Further, the size and interconnectivity of the pores may be controlled via selection of the organic nanocrystal or dendrimer structure, the total organic nanocrystal or dendrimer molecule fraction, polarity of the organic nanocrystal or dendrimer molecule and solvent, and other physiochemical properties of the gel phase.

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Номер записи: 55
13-09-2012 дата публикации

Anti-Reflection Optical Element and Method for Manufacturing Anti-Reflection Optical Element

Номер: US20120229906A1
Автор: Masaaki Miyahara, Minoru Shibuya, Terufusa Kunisada
Принадлежит: Tamron Co Ltd

An object of the present invention is to provide an anti-reflection optical element excellent in durability in the environment high-temperature and high-humidity and scratch resistance while maintaining the anti-reflection performance of a concave-convex nanostructure. To achieve the object, an anti-reflection optical element 1 comprising a concave-convex nanostructure 20 that reduces reflection of incident light on an optical surface 11 of a base optical element 1 comprising a cover layer 30 made of a light-transmitting material that covers an outer surface of the concave-convex nanostructure 20 , wherein a peak of convex portion 21 of the concave-convex nanostructure 20 is covered with the cover layer 30 in the state where a space 40 is provided between the cover layer 30 and concave portions 22 of the concave-convex nanostructure 20 is employed.

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Номер записи: 56
20-09-2012 дата публикации

Light emitting element and method for manufacturing same

Номер: US20120235117A1
Автор: Katsuhiro Tomioka, Takashi Fukui
Принадлежит: Hokkaido University NUC

Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

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Номер записи: 57
20-09-2012 дата публикации

Light emitting device including semiconductor nanocrystals

Номер: US20120238047A1
Автор: Alexi Arango, Jean-Michel Caruge, Jonathan E. Halpert, Jonathan Steckel, Moungi G. Bawendi, Seth Coe-Sullivan, Vladimir Bulovic
Принадлежит: Massachusetts Institute of Technology

A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

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Номер записи: 58
27-09-2012 дата публикации

Gain-clamped semiconductor optical amplifiers

Номер: US20120243075A1
Автор: M. Saif Islam, Nobuhiko Kobayashi, Philip J. Kuekes, Shih-Yuan Wang
Принадлежит: Individual

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

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Номер записи: 59
04-10-2012 дата публикации

Group iii nitride semiconductor multilayer structure and production method thereof

Номер: US20120248457A1
Автор: Kenzo Hanawa, Yasumasa Sasaki
Принадлежит: Showa Denko KK

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

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Номер записи: 60
11-10-2012 дата публикации

Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES

Номер: US20120256158A1
Автор: Daniel A. Cohen, Daniel F. Feezell, James S. Speck, Kwang Choong Kim, Mathew C. Schmidt, Robert M. Farrell, Shuji Nakamura, Steven P. DenBaars
Принадлежит: UNIVERSITY OF CALIFORNIA

A method for fabricating Al x Ga 1-x N-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

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Номер записи: 61
11-10-2012 дата публикации

Method of manufacturing a semiconductor laser

Номер: US20120258558A1
Автор: Kazuo Fukagai, Kenji Endo, Kentaro Tada, Masahide Kobayashi, Tetsuro Okuda
Принадлежит: Renesas Electronics Corp

Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ≦( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.

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Номер записи: 62
18-10-2012 дата публикации

Liquid crystal display device and manufacturing method thereof

Номер: US20120261846A1
Автор: Hidefumi Yoshida, Kazutaka Hanaoka, Kunihiro Tashiro, Yasutoshi Tasaka, Yohei Nakanishi, Yuichi Inoue
Принадлежит: Sharp Corp

A polymerizable compound in a liquid crystal composition is polymerized in a state that liquid crystal molecules present in a gap between a pixel electrode and at least either one of signal electrodes and scanning electrodes are tilted in a direction from the at least either one of the signal electrodes and the scanning electrodes toward the pixel electrode. Preferably, the amount of the polymerizable compound remaining in the liquid crystal phase after the polymerization is not more than 0.05 parts by weight per 100 parts by weight of the liquid crystal. In a seal section surrounding the liquid crystal layer, a second seal wall is preferably provided at a position opposite to the liquid crystal injection inlet in the non-display section.

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Номер записи: 63
25-10-2012 дата публикации

Laser characterization system and process

Номер: US20120268743A1
Автор: Chung-En Zah, Feng Xie, Gerard P. Wysocki, Yin Wang
Принадлежит: Corning Inc, PRINCETON UNIVERSITY

A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.

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Номер записи: 64
25-10-2012 дата публикации

Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

Номер: US20120270346A1
Автор: James Guenter, Ralph H. Johnson
Принадлежит: Finisar Corp

Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

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Номер записи: 65
01-11-2012 дата публикации

Lighting apparatus and display device including the same

Номер: US20120274882A1
Автор: Muntae Jung
Принадлежит: LG ELECTRONICS INC

A lighting apparatus and a display device including the same are disclosed. The present invention relates to a lighting apparatus, which can enhance resistance against gas or humidity and which can present a stable optical property and which can enhance light-emitting efficiency, and a display device including the lighting apparatus.

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Номер записи: 66
01-11-2012 дата публикации

Light projection unit and light projection apparatus

Номер: US20120275134A1
Автор: David Montgomery, James Suckling, Koji Takahashi, Yoshiyuki Takahira
Принадлежит: Sharp Corp

A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.

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Номер записи: 67
01-11-2012 дата публикации

Light projection unit and light projection device

Номер: US20120275174A1
Автор: Koji Takahashi, Yoshiyuki Takahira, Yosuke MAEMURA
Принадлежит: Sharp Corp

A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.

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Номер записи: 68
08-11-2012 дата публикации

Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same

Номер: US20120281726A1
Автор: Hideki Watanabe, Hiroyuki Yokoyama, Masao Ikeda, Masaru Kuramoto, Takao Miyajima, Tomoyuki Oki
Принадлежит: Sony Corp, Tohoku University NUC

A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

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Номер записи: 69
06-12-2012 дата публикации

Semiconductor laser manufacturing method and semiconductor laser

Номер: US20120307854A1
Автор: Shunsuke NOZU
Принадлежит: Renesas Electronics Corp

Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.

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Номер записи: 70
06-12-2012 дата публикации

Planar Lightwave Circuit, Design Method for Wave Propagation Circuit, and Computer Program

Номер: US20120311516A1
Автор: Hiroshi Takahashi, Masahiro Yanagisawa, Motohaya Ishii, Munehisa Tamura, Senichi Suzuki, Takashi Saida, Toshikazu Hashimoto, Tsutomu Kitoh, Yasuhiro Hida, Yohei Sakamaki
Принадлежит: Nippon Telegraph and Telephone Corp

A planar lightwave circuit is provided which can be easily fabricated by an existing planar-lightwave-circuit fabrication process, which can lower the propagation loss of signal light and which can convert inputted signal light so as to derive desired signal light. A planar lightwave circuit having a core and a clad which are formed on a substrate, has input optical waveguide(s) ( 111 ) which inputs signal light, mode coupling part ( 112 ) for coupling a fundamental mode of the inputted signal light to a higher-order mode and/or a radiation mode, or mode re-coupling part ( 113 ) for re-coupling the higher-order mode and/or the radiation mode to the fundamental mode, and output optical waveguide(s) ( 114 ) which outputs signal light. The mode coupling part or the mode re-coupling part is an optical waveguide which has core width and/or height varied continuously.

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Номер записи: 71
13-12-2012 дата публикации

Process and apparatus for producing a substrate

Номер: US20120315709A1
Автор: Jarmo Skarp, Tommi Vainio
Принадлежит: BENEQ OY

Process for producing a solar cell substrate, where metal particles are deposited on the surface of substrate. Metal particles are produced by liquid flame spraying method in such a way that the mean diameter of the particles to be between 30 nm and 150 nm and the deposition process is controlled in such a way that the average distance between particles is not more than four times the mean diameter of particles. Apparatus for carrying out such process.

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Номер записи: 72
27-12-2012 дата публикации

Metamaterial-based optical lenses

Номер: US20120328240A1
Автор: Changbao Ma, Zhaowei Liu
Принадлежит: UNIVERSITY OF CALIFORNIA

Devices based on metamaterial structures to guide and manipulate light, other electromagnetic radiation and acoustic waves. For example, a lens can include a metamaterial structure comprising nano structures of metallic and dielectric materials; and a plasmonic waveguide coupler formed over the metamaterial structure for coupling electromagnetic radiation to or from metamaterial structure. The metamaterial structure has an anisotropic structure and the plasmonic waveguide coupler is structured to include metal and non-metal parts to support surface plasmon polaritons and to cause different phase delays at different locations of an interface with the metamaterial structure in a way that the metamaterial structure and the plasmonic waveguide coupler effect a lens for performing a Fourier transform of the electromagnetic radiation coupled between the metamaterial structure and the plasmonic waveguide coupler.

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Номер записи: 73
27-12-2012 дата публикации

Composite with nano-structured layer

Номер: US20120328829A1
Автор: Brant U. Kolb, John D. Le, Kalc C. Vang, Moses M. David, Robert C. Fitzer, Ta-Hua Yu
Принадлежит: 3M Innovative Properties Co

Nano-structured layers having a random nano-structured anisotropic major surface.

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Номер записи: 74
03-01-2013 дата публикации

Elevated LED

Номер: US20130001511A1
Автор: Bo Pedersen, Jonas Ohlsson, Lars Samuelson, Patrik Svensson
Принадлежит: QUNANO AB

The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.

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Номер записи: 75
03-01-2013 дата публикации

Wavelength tunable laser diode

Номер: US20130003762A1
Автор: Toshimitsu Kaneko
Принадлежит: Sumitomo Electric Industries Ltd

A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light with a wavelength at which the one of the gain peaks and one of the reflection peaks coincides. In the present LD, both the gain spectrum and the reflection spectrum are modified by adjusting the temperature of the SG-DFB region and that of the CSG-DBR region independently.

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Номер записи: 76
03-01-2013 дата публикации

Photonic Crystal MicroArray Layouts for Enhanced Sensitivity and Specificity of Label-Free Multiple Analyte Sensing, Biosensing and Diagnostic Assay

Номер: US20130005605A1
Автор: Ray T. Chen, Swapnajit Chakravarty
Принадлежит: Omega Optical Inc

Methods and systems for label-free multiple analyte sensing, biosensing and diagnostic assay chips consisting of an array of photonic crystal microcavities along a single photonic crystal waveguide are disclosed. The invention comprises an on-chip integrated microarray device that enables detection and identification of multiple species to be performed simultaneously using optical techniques leading to a high throughput device for chemical sensing, biosensing and medical diagnostics. Other embodiments are described and claimed.

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Номер записи: 77
10-01-2013 дата публикации

Method for producing semiconductor optical integrated device

Номер: US20130012002A1
Автор: Hirohiko Kobayashi, Kenji Hiratsuka, Kenji Koyama, Masaki Yanagisawa, Yoshihiro Yoneda
Принадлежит: Sumitomo Electric Industries Ltd

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

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Номер записи: 78
10-01-2013 дата публикации

Method for fabricating silicon nanowire arrays

Номер: US20130012022A1
Автор: Kai-Chung Wu, San-Liang Lee, Yung-jr Hung
Принадлежит: National Taiwan University of Science and Technology NTUST

A method for larger-area fabrication of uniform silicon nanowire arrays is disclosed. The method includes forming a metal layer with a predetermined thickness on a substrate whose surface has a silicon material by a coating process, the metal layer selected from the group consisting of Ag, Au and Pt; and performing a metal-induced chemical etching for the silicon material by using an etching solution. Accordingly, a drawback that Ag nanoparticles are utilized to perform the metal-induced chemical etching in prior art is solved.

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Номер записи: 79
17-01-2013 дата публикации

Nitride-based semiconductor device and method for fabricating the same

Номер: US20130015427A1
Автор: Akihiro Isozaki, Atsushi Yamada, Mitsuaki Oya, Toshiya Yokogawa
Принадлежит: Panasonic Corp

A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12 ; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10 ; and an electrode 30 provided on the semiconductor multilayer structure 20 . The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32 . The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

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Номер записи: 80
24-01-2013 дата публикации

Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby

Номер: US20130019930A1
Автор: Hsiang-Yu Chen, Joseph M. Luther, Matthew C. Beard, Octavi Escala Semonin
Принадлежит: Alliance for Sustainable Energy LLC

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

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Номер записи: 81
24-01-2013 дата публикации

Hybrid silicon evanescent photodetectors

Номер: US20130020556A1
Автор: John E. Bowers
Принадлежит: UNIVERSITY OF CALIFORNIA

Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

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Номер записи: 82
31-01-2013 дата публикации

Lighting devices with prescribed colour emission

Номер: US20130026506A1
Автор: Hagai Arbell
Принадлежит: Yissum Research Development Co of Hebrew University of Jerusalem

Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In some embodiments, the SNPs or RSNPs form conversion layers without a host matrix. In some embodiments, the SNPs or RSNPs are embedded in a host matrix such as polymers or silicone. The conversion layers can be made extremely thin, while exhibiting the superior combinations of optical properties. Lighting devices including SNP or RSNP-based conversion layers exhibit energetically efficient superior prescribed colour emission

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Номер записи: 83
31-01-2013 дата публикации

Liquid crystal display apparatuses

Номер: US20130027653A1
Автор: Byoung Dae Ye, Hyeeun PARK, JoongHyun Kim, SungKu BAEK, Yong-Hoon Kwon, Young-Jun Seo
Принадлежит: Samsung Display Co Ltd

A liquid crystal display apparatus includes a liquid crystal display panel which displays an image, a light guide plate, a backlight unit including a light source part which generates and supplies light, and a panel temperature adjusting member on a surface of the liquid crystal display panel. The panel temperature adjusting member includes a transparent resistor, and a power supply which supplies power to the transparent resistor. The transparent resistor emits a larger amount of heat to a region of the liquid crystal display panel, which is distant from the light source part, than to a region close to the light source part, such that the liquid crystal display panel has uniform temperature distribution.

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Номер записи: 84
31-01-2013 дата публикации

Free form printing of silicon micro- and nanostructures

Номер: US20130029480A1
Автор: Andreas Fischer, Frank Niklaus
Принадлежит: Individual

A method of making a three-dimensional structure in semiconductor material includes providing a substrate ( 20 ) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure ( 30 ) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate ( 20 ).

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Номер записи: 85
07-02-2013 дата публикации

Optical element, light source device, and projection display device

Номер: US20130033678A1
Автор: Goroh Saitoh, Masanao Natsumeda, Masao Imai, Shin Tominaga
Принадлежит: NEC Corp

Disclosed is an optical element that includes: carrier generation layer ( 16 ) in which carriers are generated by light from light guide body ( 12 ) into which light from a light-emitting element enters; plasmon excitation layer ( 17 ) that has a plasma frequency higher than the frequency of light generated when carrier generation layer ( 16 ) is excited by light from the light-emitting element; and wave vector conversion layer ( 18 ) that converts surface plasmon generated by plasmon excitation layer ( 17 ) light having a predetermined exit angle to output the light. Plasmon excitation layer ( 17 ) is sandwiched between two layers having dielectric properties. The effective dielectric constant of the incident side portion of plasmon excitation layer ( 17 ) including an entire structure stacked above light guide body ( 12 ) side is higher than that of the exit side portion of plasmon excitation layer ( 17 ) including the entire structure stacked above wave vector conversion layer ( 18 ) side and the medium in contact with wave vector conversion layer ( 18 ).

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Номер записи: 86
14-02-2013 дата публикации

Device including quantum dots

Номер: US20130037778A1
Автор: John Spencer Morris, Jonathan S. Steckel, Matthew Stevenson, Peter T. Kazlas, Robert J. Nick, Zoran Popovic
Принадлежит: Individual

A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.

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Номер записи: 87
14-02-2013 дата публикации

Method of making a nanostructure

Номер: US20130038949A1
Автор: Andrew K. Hartzell, Moses M. David, Ta-Hua Yu
Принадлежит: 3M Innovative Properties Co

A method of making a nanostructure is provided that includes applying a thin, random discontinuous masking layer ( 105 ) to a major surface ( 103 ) of a substrate ( 101 ) by plasma chemical vapor deposition. The substrate ( 101 ) can be a polymer, an inorganic material, an alloy, or a solid solution. The masking layer ( 105 ) can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyls, metal isopropoxides, metal acetylacetonates, and metal halides. Portions ( 107 ) of the substrate ( 101 ) not protected by the masking layer ( 105 ) are then etched away by reactive ion etching to make the nanostructures.

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Номер записи: 88
14-02-2013 дата публикации

Adhesive composition, adhesive film including the same, method of preparing adhesive film, and display member using the same

Номер: US20130040123A1
Автор: Ik Hwan Cho, In Cheon Han
Принадлежит: Cheil Industries Inc

A UV curable adhesive composition includes a morpholine group-containing (meth)acrylic copolymer.

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Номер записи: 89
21-02-2013 дата публикации

Hole blocking layers in non-polar and semi-polar green light emitting devices

Номер: US20130044783A1
Автор: Chung-En Zah, Dmitry S. Sizov, Rajaram Bhat
Принадлежит: Corning Inc

Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.

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Номер записи: 90
28-02-2013 дата публикации

Polarization-entangled photon pair source and method for the manufacture thereof

Номер: US20130048845A1
Автор: Adrien Dousse, Pascale Senellart
Принадлежит: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

An entangled photon pair source including: a quantum emitter having a ground state, two degenerate states that have one elementary excitation and different spins, and a state having two elementary excitations; a first optical cavity, wherein the quantum emitter is inserted; and a second optical cavity coupled with the first cavity. The geometry of the first and second cavities, and force of coupling thereof, are selected such that the whole formed by both coupled cavities has a first pair of polarization-degenerate modes, that are resonant with transitions between the state having two elementary excitations and the two degenerate states having one elementary excitation from the quantum emitter, and a second pair of polarization-degenerate modes that are resonant with transitions between the degenerate states, having one elementary excitation, and the ground state.

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Номер записи: 91
28-02-2013 дата публикации

Plasmonic waveguides, circuits, and systems

Номер: US20130051748A1
Автор: Edoardo Charbon, Mohammad Azim Karami
Принадлежит: Technische Universiteit Delft

Waveguide structure for propagating a surface plasmon polariton, including an inter-metal plasmonic waveguide ( 1 ). The waveguide structure has two metal strip like structures ( 2, 3 ) positioned parallel to each other and an isolating material structure ( 4 ) positioned between the two metal strip like structures ( 2, 3 ). The two metal strip like structures ( 2, 3 ) are positioned at a fixed distance (d) from each other. The inter-metal plasmonic waveguide ( 1 ) is provided in a single layer of a CMOS processed substrate ( 5 ). Several waveguide structures ( 1 ) may be combined with a crystal like structure ( 6 ) to build logic gates, such as a switch having a gate, source and drain terminal ( 1 G, 1 S, 1 D). Using three dimensional designs spanning several layers in a CMOS processed substrate ( 5 ) very complex yet compact logic circuits may be designed.

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Номер записи: 92
07-03-2013 дата публикации

Semiconductor optical integrated device

Номер: US20130058371A1
Автор: Hirohiko Kobayashi, Kenji Hiratsuka, Kenji Koyama, Masaki Yanagisawa, Yoshihiro Yoneda
Принадлежит: Sumitomo Electric Industries Ltd

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

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Номер записи: 93
21-03-2013 дата публикации

Led light bulb with controlled color distribution using quantum dots

Номер: US20130070450A1
Автор: David Horn
Принадлежит: Switch Bulb Co Inc

A liquid-cooled LED bulb including a base and a shell connected to the base forming an enclosed volume. The liquid-cooled LED bulb also includes a plurality of LEDs attached to the base and disposed within the shell. The LED bulb also includes a thermally-conductive liquid held within the enclosed volume and a quantum dot material for adjusting the wavelength of light emitted from LED bulb.

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Номер записи: 94
28-03-2013 дата публикации

Photo-Switchable Fullerene-Based Materials as Interfacial Layers in Organic Photovoltaics

Номер: US20130074920A1
Автор: Danisha M. Rivera-Nazario, Luis Echegoyen, Michael D. Irwin
Принадлежит: University of Texas System

Design and use of photo-switching, fullerene-based dyads of the design x-D-y-A or D-y-A-x as interfacial layers (IFL) for organic photovoltaic (OPV) devices are described herein. The fullerene-based dyads and triads of the present invention contain electron-donating substituents such as porphyrins or phthalocyanines that exhibit charge separation states with long lifetimes upon irradiation, resulting in rejection of electrons reaching the electrode and concurrently promoting the conduction of holes. This phenomenon has a strong rectifying effect on the whole device, not just the interfaces, resulting in improved charge extraction from the interior of the photo-active layer. The invention further describes anchoring an IFL to the ITO surface as a monolayer, bilayer, or greater multilayers. One OPV design embodiment of the present invention embodiment involves the formation of covalent bonds via silane groups (—SiR 3 ) as the anchor (x), to form siloxane bonds.

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Номер записи: 95
28-03-2013 дата публикации

Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof

Номер: US20130075694A1
Автор: Asaf ALBO, Dan Fekete, Gad Bahir
Принадлежит: Technion Research and Development Foundation Ltd

Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

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Номер записи: 96
11-04-2013 дата публикации

Light emitting diode

Номер: US20130087818A1
Автор: Qun-Qing Li, Shou-Shan Fan, zhen-dong Zhu
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

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Номер записи: 97
11-04-2013 дата публикации

Light position controlling apparatus and method of manufacturing the same

Номер: US20130088764A1
Автор: Min-Baek Lee, Seung-Nam Cha, Young-Jun Park, Zhong Lin Wang
Принадлежит: Georgia Tech Research Corp, SAMSUNG ELECTRONICS CO LTD

A light position controlling apparatus and a method of manufacturing the same. The light position controlling apparatus includes a substrate; first and second electrodes that are arranged on the substrate and configured to generate an electric field; and a piezoelectric nano wire configured to operate as optical waveguide. The piezoelectric nano wire includes a first portion disposed on the substrate, and a second portion that extends from the first portion and bends according to the electric field generated by the first and second electrodes to change a travel direction of light transmitted by the piezoelectric nano wire.

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Номер записи: 98
18-04-2013 дата публикации

Method of manufacturing a thermally-assisted magnetic recording head that suppresses protrusion of a plasmon generator

Номер: US20130091695A1
Автор: Koji Shimazawa, Tatsuya Shimizu, Yasutoshi Fujita
Принадлежит: SAE Magnetics HK Ltd, TDK Corp

A method of manufacturing a thermally-assisted magnetic recording head includes the steps of: forming a preliminary head section that has a surface to be polished and includes a magnetic pole, a waveguide, and a preliminary plasmon generator; causing a volumetric expansion of the preliminary plasmon generator with heat by introducing light into the core of the waveguide of the preliminary head section; and polishing the surface to be polished of the preliminary head section into a medium facing surface. The preliminary plasmon generator has an end face located in the surface to be polished. In the step of polishing the surface to be polished, the surface to be polished is subjected to polishing with the preliminary plasmon generator expanded in volume, whereby the end face of the preliminary plasmon generator is polished into the front end face, and the preliminary plasmon generator thereby becomes the plasmon generator.

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Номер записи: 99
18-04-2013 дата публикации

Methods of Fabricating Optoelectronic Devices Using Semiconductor-Particle Monolayers and Devices Made Thereby

Номер: US20130092975A1
Автор: Ajaykumar R. Jain
Принадлежит: VERSATILIS LLC

Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

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Номер записи: 100