碳纳米管半加器及其制备工艺

The invention relates to a microelectronic device and the process for making it, in particular a half-adding device based on the carbon nano tube, witch composes mainly a super long single wall carbon nano tube, 15 separate grids and 16 separate electrodes. By applying a constant bias voltage on the specific grids, the carbon nano tube can be intercepted, forming a plurality of separate carbon nano tube field effect tube. Then linking these field effect tubs in accordance with the design, and connecting the necessary resistance and a constant voltage source for realizing the half-adding function. The invention also realizes simple structure and easy manufacturing.

Convenient method for preparing binder-free stannic oxide/carbon fibrofelt for negative pole of high-performance lithium ion battery

The invention discloses a convenient method for preparing binder-free stannic oxide/carbon fibrofelt for a negative pole of a high-performance lithium ion battery. The method disclosed by the invention comprises the following steps: dissolving polyacrylonitrile and stannous chloride which have certain concentrations to a N'N-dimethyl formamide solution, magnetically stirring the solution of polyacrylonitrile, the stannous chloride and the N'N-dimethyl formamide solution until the solution is clarified, electrostatically spinning the solution, and finally annealing the obtained solution which is obtained at a high temperature twice to obtain Sn-SnOx uniformly loaded nanometer composite materials of the carbon fibrofelt. For a compound which is prepared by the method disclosed by the invention, since the electrostatic spinning method is adopted, nanometer particles of metal-metallic oxide are uniformly dispersed into buffer substrate carbon fiber, and the circulation specific capacity and ...

碳纳米管式集成场效应管及其制备工艺

This invention relates to a preparing technology realizing fieldistor integration by carbon nm transistors which is to make interphases grating and electrodes on an insulation layer with a super longcarbon nm transistor on it, a certain value of constant voltage is given to some gratings to stop part of the support long nm transistor which is equivalent to several carbon nm transistor fieldistors realizing the integration. The preparation technology is to put a carbon nm transistor on the grid and electrodes of an insulation layer to finished an integrated fieldistor.

Point contact planar grid type single-electronic transistor and its preparing process

The invention relates to microelectronic device and its manufacturing method, especially to point-contact plane grid type high-temperature single electron transistor and its preparation method. On conductive material layer on substrate, there is source electrode and drain electrode prepared by photo etching method of electron beam and common photo etching method. Narrow channel containing quantumpoint is positioned between source electrode and drain electrode. Point-contact plane grid electrodes are positioned on two sides of the narrow channel. An insulated material layer is deposited on the conductive material layer, and surface grid covers the insulated material layer. In the invention, the size of the quantum point can reach atom scale and can work at room temperature. The invented single electron transistor satisfies two basic conditions of normal operation.

一种纳米孔氧化铝模板的生产工艺

The present invention is the production process of aluminum template with nano holes, and is especially the combined anode oxidation and ion bombardment process of producing aluminum template with nano holes in high density and high order. The technological process includes annealing aluminum foil, cleaning, electrochemical polishing, anode oxidation in water solution of oxidizing acid, such as sulfuric acid, oxalic acid, phosphoric acid, to form alumina film, ion bombardment to form holes in the film physically, water rinsing and stoving. The technological process is simple and low in cost, and the holes are densely distributed in certain order and have controllable shape and size of several nano to 100 nano. The said template may be used widely in direct assembling of nano device except its traditional industrial application.

Composite quantum point device and a process for making it

The invention discloses a composite quantum point device and a process for making it. The device includes a doping buffer layer made on the substrate using the high adulterated conductive GaAs in sequence by a molecular beam epitaxy method, semi-conductive GaAs isolating layer, an InAs quantum point layer and a thin GaAs cover layer covered on the InAs quantum point layer, an electrode prepared on the cover layer of the substrate and depositing AuGeNi on the back of the substrate as the back grid of the device, it also includes an AlGaAs/GaAs layer, a superlattice barrier layer prepared on the buffer layer and a theta -Si doping layer. The device is a composite quantum point device made by arrangement such as quantum points, two-dimensional gas and a thin Schottky barrier layer using the conventional method, it possesses a plurality of functions including luminescence, optical detection, amplification and storage.

Limb tremor assessment method and system based on millimeter wave radar

The invention discloses a limb tremor assessment method and system based on a millimeter wave radar, and is particularly applied to a nervous system disease patient with a tremor symptom. The system has the advantages of high precision, non-contact and the like, and can accurately monitor and quantitatively evaluate the tremor symptom of the patient in an undisturbed manner, so as to assist doctors in diagnosis and formulate individualized treatment schemes.

点接触平面栅型单电子晶体管及其制备方法(二)

... 本发明涉及微电子器件和微加工方法，特别是涉及一种点接触平面栅型高温单电子晶体管及其制备方法。用电子束光刻方法及常规光刻法来制备。在衬底上的导电材料层中有源极和漏极；在源极和漏极之间是一含有量子点的窄通道，在窄通道两边是点接触平面栅，在导电材料层上为一沉积的绝缘材料层，在绝缘材料层上覆盖有表面栅。本发明的单电子晶体管量子点的大小可达原子尺度，能在室温下工作，满足单电子晶体管正常动作的两个基本条件。 ...

Micro-nano porous structure polymer electrolyte membrane used for lithium ion battery and method of producing the same

The present invention discloses a micro-nano porous structure polymer electrolyte membrane used for lithium ion battery and method of producing the same. Utilizing micro-nano to composite two or more than two immiscible and good ionic conductivity polymer with porous basement of good mechanical property, generating larger pore diameter micron pore, generating minor pore diameter micron pore between two or more than two unable integrated polymers inside the membrane, finally generating mesh micro-nano porous structure, obtaining a polymer electrolyte membrane with preferable mechanical intensity, favourable fluid absorption rate and ionic conductivity. The membrane composites with the positive negative pole piece easily to make favourable interface combination between the polymer electrolyte membrane and the pole piece, the lithium ion distributes uniformly inside the polymer electrolyte, concentration balance, the current density is uniform inside the battery when charge-discharge, electrochemical ...

基于库仑阻塞原理设计的单电子三值存储器及其制备方法

The storage device possesses an insulative base plate with a conducting material layer on it. There are two structures of multiple tunneling junctions, one single electron transistor and one storage junction unit. One end of two tunneling junctions through lead wire connected to each other is as input end for writing in voltage, and the other end of each tunneling junction is connected to a storage junction. Middle capacitance in storage junction unit is coupled each other. Single electron transistor possesses source pole, drain pole, quantum point weak coupled to source/drain pole and grid pole for controlling static chemical potential energy of quantum point. Quantum point is connected to storage junction unit through mode of capacitance coupling. The part possesses three stable store statuses. Only controlling movement of minute electron can implement normal operation of the part so as to realize storing information in super high density under low power consumption.

一种单电子晶体管及其制备方法

... 本发明涉及微电子及微加工方法。本发明提供一种由一维波导及线条栅等组成的单电子晶体管。本发明的单电子晶体管是利用一维波导和线条栅组合形成量子点等技术来制备的。本发明通过“挖槽”等技术的应用减小了工艺损伤，提高了成品率。本发明的单电子晶体管工作稳定性好，适于集成。本发明的量子点的尺寸可小达纳米量级，从而大大提高了器件的工作温度。 ...

Preparing of composite polymer modified diaphragm containing shape selectivity molecular sieve filling agent

Polymer modified diaphragm preparation, using polyolefin as principle material to prepare modified matrix membrane, the polyolefin material is added with 20-80% hydroscopicity resin, using the T-shape membrane method single screw rod of the melting express method to expressing shape and getting the polyolefin modified membrane. Then coating the composite polymer material containing shape selectivity molecular sieve filling agent onto the polyolefin modified matrix membrane wo prepare composite polymer modified membrane. The hydroscopicity resin used not only improves pore size distribution in diaphragm and the hydrophilic group improves diaphragm wettability and interface property, the shape selectivity molecular sieve used can not only make acid-base reaction with O via louis acid site on the surface, reducing the force between them and the L1 [+], and make the anion with relative larger radius difficult to transmit via pipes because of regulartwo-dimension cross pore, and improving migration ...

可在室温下工作的单电子存储器及制备方法

The invention relates to a single electron memory having single wall carbon nano tube and MOSFET design and the method for making the same wherein the memory device comprises, a silicon substrate, whose surface is a silicon dioxide insulation layer, and on which field-effect transistors and electrodes with splitting grid arrangement are prepared, it also include the single wall carbon nano tubes possessing quantum dots arrangement. The said splitting grid of the field-effect transistor is composed of a central grid and two outer grids in parallel arrangement at the two sides of the central grid. The electronic memory by the invention realizes the information low-power consumption super-high density storage under the room temperature.

Method for in-situ construction of micro-nano device

The invention discloses an in-situ construction method for a micro-nano device, and in particular relates to a method for in-situ construction of the micro-nano device by a maskless lithography, which is a novel method arranging nanomaterials between electrodes and connecting the nanomaterials with the electrodes. The process comprises the steps of distributing the nanomaterials on a substrate, glue evening, positioning the nanomaterials by a maskless lithography machine, designing an exposure figure in situ and exposing, developing, fixation, depositing and stripping a metal layer, and finally forming a prototype micro-nano device of which the nanomaterials are positioned under the electrodes and connected with the electrodes. The method is particularly suitable for the in-situ construction of devices with complex nano structures, and the device can further construct micro-nano devices with other structures, including nanomaterial field effect transistors, micro-nano sensors, oscillators ...

Composite quantum point device and a process for making it

Single electron memory having carbon nano tube structure and process for making it

The invention discloses a single electron dynamic random access memory (DRAM) device and process for making it. The device uses the Si SOI material on the insulation layer as substrate, a nano line is made by etching processing in the Si layer of SOI, one end of the nano line is data cable pin, and there are two control grids parallel to the two sides of the namo lines at each side of them. the device also includes a carbon nano tube transistor. The memory unit is the part of the namo line which is longer the the control grid and extending into between the two electrode regions of the carbon nano transistor. By controlling several dozens or several electrons, the normal operation of the memory can be realized and without the influence of the random background charges, thus solving the problems such as stability, power consumption, radiation and grid leakage current faced in the development of the traditional memories, the invention also realizes the super-high density information storage ...

一种提高纳米材料电性能的方法

The method for raising electrical performance of nano material includes the following steps: placing the nano material between two electrodes and making its two ends be respectively connected with two electrodes, then placing the device formed from nano material and two electrodes into a vacuum chamber and applying voltage to two ends of the nano material so as to raise its quality and electrical performance.

Protein gel flexible tactile sensor capable of generating microstructure under assistance of bubbles and preparation method of protein gel flexible tactile sensor

The invention discloses a protein gel flexible tactile sensor capable of generating a microstructure under the assistance of bubbles and a preparation method of the protein gel flexible tactile sensor, and relates to template-free preparation and strengthening treatment of protein gel with the microstructure, including bubble-assisted generation of a micro-nano three-dimensional structure and a bubble size regulation and control method. And the flexible touch sensor can be assembled as a pressure-sensitive dielectric layer. The protein gel flexible tactile sensor disclosed by the invention overcomes the defects that a traditional flexible sensor material is non-degradable, a microstructure cannot be rapidly prepared in a large area and the like, and the working procedures of template preparation, mold reversing, stripping and the like of the microstructure are reduced; the invention provides a preparation method of a degradable protein gel flexible sensor which is template-free, energy-saving ...

Preparation method of room-temperature hydrogen sensor

The invention discloses a preparation method of a room-temperature hydrogen sensor, and relates to a hydrogen sensor. The preparation method comprises the steps of annealing a metal oxide; adding chloride which is palladium chloride or platinum chloride, polyvinylpyrrolidone, NaI.2H2O and deionized water in a beaker filled with dimethylformamide to obtain a brownish black solution, transferring the brownish black solution to a reaction kettle; then adding the annealed metal oxide in the reaction kettle and performing ultrasonic dispersion, sealing the reaction kettle after the metal oxide is dispersed completely, and placing at a set growth temperature, cooling the dispersed metal oxide to the room temperature when the reaction is ended, centrifuging and washing; and finally, dispersing a product in a solvent to obtain a room-temperature metal oxide hydrogen sensitive material with palladium or platinum nano particles deposited on the surface, ultrasonically dispersing the room-temperature ...

Method for preparing ITO nanometer line and gas sensor thereof

The invention discloses a method to prepare ITO nanometer lines and a method to prepare ITO gas sensors. The method to prepare ITO nanometer lines is as follows: a layer of gold film deposits on an underlayer; powdered indium oxide, stannous oxide and plumbago are mixed pro rata, and are arranged in a boat; the underlayer is also arranged on the boat to be heated and thermally insulated together with the mixture. The air pressure inside a silica tube in a heater is kept to be about 300 Pa, and gaseous mixture containing little oxygen is admitted in the silica tube; after the heater is cooled to the room temperature, yellowish products are generated on the underlayer. The method to prepare the sensors is that the nanameter lines are dispersed in the solution for about two hours with ultrasonic wave, and are dried; the sizing agent formed is applied on the ceramic tubes of two electrodes, and needs covering on the electrodes; then the sizing agent is dried or sintered, and is connected with ...

Spiral coil shower nozzle for electrostatic spinning

The utility model provides a spiral coil shower nozzle for electrostatic spinning, relates to an electrostatic spinning shower nozzle. Be equipped with solution tank, pivot, spiral quoit, supporting seat, drive arrangement, the solution tank upper surface is open, and the pivot is established in the solution tank top, and the pivot can be electrically conducted and external high voltage static generating device, and the pivot both ends are connected with drive arrangement, and the pivot left and right sides is fixed respectively on the supporting seat, and pivot and spiral quoit both ends link firmly and lie in the axle center position of spiral quoit. Not enough to current electrostatic spinning equipment productivity, it is low to spin out fibre film thickness homogeneity, provides an electrostatic spinning shower nozzle that can be used to the large -scale preparation nanofiber film. Have characteristics such as simple structure, low cost, high efficiency. The more traditional needle ...

对电荷超敏感的库仑计及其制备方法

... 本发明属于微电子器件和微加工方法，特别是涉及一种对电荷超敏感的库仑计及其制备方法。在衬底上的导电材料层中有源极(1)和漏极(2)；在导电材料层的源极和漏极处有第一槽(8)和第二槽(9)，第一槽(8)和第二槽(9)之间的台面形成连接源极和漏极的一维波导，其宽度为3-800纳米；在一维波导上沉积有第一隧穿势垒线条栅(5)、第二隧穿势垒线条栅(6)和探头线条栅，第一隧穿势垒线条栅(5)和第二隧穿势垒线条栅(6)之间的一维波导为量子点(3)，在一维波导的量子点处有边线条栅。可用于探测万分之一的电子电荷。 ...

Single electron memory having carbon nano tube structure and process for making it

The invention relates to a single electron memory having carbon nano tube structure and process for making it. The memory uses the semi-conductive GaAs as substrate, a buffer layer is prepared on thesubstrate, a Si-containing delta doping GaAs thin layer is prepared on the buffer layer, a nano line is made by etching processing in the delta doping GaAs layer, one end of the nano line is data cable pin, and there are two control grids parallel to the two sides of the namo lines at each side of them. The memory unit is the part of the namo line which is longer the control grid and extending into between the two electrodes of the carbon nano transistor. By controlling several dozens or several electrons, the normal operation of the memory can be realized and without the influence of the random background charges, thus solving the problems such as stability, power consumption, radiation and grid leakage current faced in the development of the traditional memories, the invention also realizes ...

具有高集成度的单电子存储器及其制备方法

The invention relates to a single electron memory having high integration level and process for making it, comprising, using silicon as substrate on the surface of which a silicon dioxide insulation layer is formed by oxidation, and grids, electrodes and datawire pins formed by the conductive layer on the silicon dioxide layer are arranged, wherein the two electrodes have a predetermined space, acarbon nano tube is arranged above the two electrodes and in Ohm contacts with the two electrodes, the grid is arranged on one side of the two electrodes, and the datawire pins are arranged on the other side of the substrate, another carbon nano tube is arranged above the grid and the datawire pins, and in Ohm contacts with the two, there are two tunneling junctions on the carbon nano tube between which a quantum dot of the carbon nano tube is formed. The quantum dots prepared by the method can operate under room temperature.

Beta -Ga2O3nano lines and gas sensors preparing method, and gas sensing method for realizing quick-speed response

The preparation method for nanometer lines comprises: coating a metal on the silicon substrate; placing the gallium powder into the boat; the substrate is placed at a location away from the boat in proper distance; heating and keeping the temperature; blowing nitrogen gas into the heating furnace; after cooling the heating furnace to the room temperature; the nanometer lines are formed in the substrate. The method for preparing the sensor comprises: depositing the golden electrode on the silicon substrate with SiO2 layer; the distance between two electrodes is 1 mu m; connecting single nanometer line to the electrode; connecting the lead; making aging process. The fast oxygen response of the sensor: at first, the free carrier concentration in the nanometer is very low; by adjusting the oxygen, its electric conductance is very week; under the illumination of the ultraviolet light, the current passing through the nanometer line is increased into a certain value, it show the oxygen concentration ...

Three-end electrical measuring process for quantum spots

The invention relates to a three-end electrical measuring process for quantum spots, characterized by that, by forming a thin Schottky contacting on the surface of the quantum spots, arranging three electrodes on the quantum spots, wherein one electrode is connected to ground, one electrode is applied by a constant bias voltage, another electrode is applied by a scanning voltage, measuring the current Log curve corresponding to the scanning voltage on another electrode under the constant bias voltage condition using measuring instrument, by which the spark resistance and two-dimension electron gas resistance of the quantum tunnel spots are calculated. The invention can be used to measure each value for quantum spot device, making it possible to judge the degree of density of quantum spots, distribution uniformity and swing of quantum spots size, the invention can also be used to judge the concentration of the two-dimensional electron gas and the value of mobility.

High-precision continuous blood pressure measuring device and method

The invention provides a high-precision continuous blood pressure measurement device and method, and relates to the technical field of blood pressure measurement. A multi-mode pulse sensor is placed at the superficial temporal artery to sense superficial temporal artery volume pulse waves and probe contact pressure respectively. The original signal output of the sensor is amplified and demodulated through the phase-locked amplification unit based on the heterodyne oscillation technology, and a pulse wave signal with low noise and high time resolution is obtained. Waveform features in the pulse wave signal and the probe pressure signal are related to the main artery blood pressure, and the two kinds of data can be used for establishing a blood pressure prediction model and achieving accurate estimation of the blood pressure. According to the scheme, multiple types of pulse wave signals are measured at the superficial temporal artery, and the blood pressure prediction model is established ...

Ultra-fast electrical sensing array synchronous measurement system and measurement method

The invention provides an ultra-fast electrical sensing array synchronous measurement system and a measurement method, which can be used for fast detection of impedance imaging and high-speed data acquisition of a capacitive sensing array. Different orthogonal coding signals are applied to each array electrode, and meanwhile, each electrode is used as a detection electrode and can separate the amplitude and the phase of a corresponding independent coding signal from superposed multi-channel coding signals of a parallel array so as to realize synchronous array electrical signal detection. Time delay generated by switching of a channel selection switch in an array electrode is avoided, so that the data acquisition rate is increased, and meanwhile switching disturbance caused by an array switch scanning circuit is avoided. Generation of an orthogonal excitation power supply is completed based on the FPGA, and then multi-channel demodulation is carried out on a receiving electrode signal. The ...

具有多个稳定存储状态的单电子存储器及制法

The storage device includes five parts: traditional MOSFET, single electron transistor, diode, storage junction and structure of multi tunneling junctions. Grid pole of MOSFET is coupled to both of capacitance with conduction channel and capacitance of drain pole. Diode structure of p-n junction is prepared by using the drain pole of MOSFET as one end. Space charge depletion region is formed in middle. Source pole and drain pole of single electron transistor are weak coupled to quantum point. Meanwhile, quantum point is coupled to storage junction capacitance, and the other end of the storage junction is connected to multi tunneling junctions. Lead wire of multi tunneling junctions is connected to one end of the diode. Theoretically. The part possesses many stable storing statuses arbitrarily. Only controlling movement of minute electron can implement change of status so as to realize storing information in super high density as well as industrialized manufacture easily.

Point-contact planar grid type single-electron transistor and its preparing process

The invention relates to a microelectronic device and its micro-processing method, especially to point-contact plane grid-type high-temperature single electron transistor and its preparing method. Onconductive material layer on substrate, there is source electrode and drain electrode prepared by photo etching method of electron beam and common photo etching method. Narrow channel containing quantum point is positionined between source electrode and drain electrode. Point-contact plane grid electrodes are positioned on two sides of the narrow channel. An insulated material layer is deposited on the conductive material layer, and surface grid covers the insulated material layer. In the invention, the size of the quantum point can reach atom scale and can work at room temperature. The invented single electron transistor satisfies two basic conditions of normal operation.

Coulometer with supersensitivity to charge and its preparing process

The invention relates to a charge-super sensitive Coulomb meter and its preparation method that belongs to microelectronic device and micro-processing method. There are a source electrode and a drainelectrode in the conducting material layer on substrate. There are trough 8 and trough 9 in the source electrode and drain electrode. The platform with a width of 3-800nm between trough 8 and trough 9 forms a one dimension waveguide to link the source and the drain. Wire grid 5, 6 of tunnelling potential barrier and wire grid of probe head are deposited on the one-dimension waveguide. Quantum points is the one-dimension waveguide between wire grid 5,6, and sideline grid is positioned on the quantum point. The invented meter can detect 1/10000 electron charge.

利用碳纳米管制作的逻辑“非”门器件

This invention relates to a NOT-gate logic device including a Si substrate with a SiO2 insulation layer on it, a single wall carbon nm tube, a grid and an electrode are set on the Si substrate characterizing in that the said grid is a deposited Al on the groove in SiO2 insulation layer forming Al2O3 insulation layer after surface oxidized, the said electrode includes two electrodes parallel to the grid at both sides of the grid, the said electrode is set above or below the single wall carbon nm tube, one of which is put on SiO2 insulation layer surface contacting with surface of Al2O3 noble metal of the electrode, the first is connected with a constant voltage source power, grid is the input end, realizing logic NOT-gate function.

Spinning sprayer device for compound nano-fiber

The invention relates to electrostatic spinning sprayers, in particular to a spinning sprayer device for compound nano-fiber. The spinning sprayer device for the compound nano-fiber comprises a sprayer support, a hollow conical sprayer, a sprayer cavity, a sprayer coupling shaft, a transmission gear, a bearing, an inner needle head, an inner needle head sleeve, an outer needle head, an outer needle head base, an electrode, a motor and a drive gear. The sprayer cavity is fixedly connected with the sprayer support. The rear portion of the hollow conical sprayer penetrates through the front end of the sprayer support. The rear portion of the hollow conical sprayer is matched with the sprayer cavity in a rotatable mode. The rear end of the hollow conical sprayer is connected with the front end of the sprayer coupling shaft. The rear portion of the inner needle head is sleeved with the inner needle head sleeve. The inner needle head sleeve is matched with a central through hole formed in the ...

Non-volatility random access memory using carbon nano tube design and process for making it

The invention relates to a non-volatilizing random access memory made by carbon nano tube and process for making it. The memory includes an array formed by the upper and lower layers of carbon nano tubes, each of which is a set of parallel single wall carbon nano tube, the upper and lower layer of the carbon nano tube are perpendicular to each other but do not contact, each of the crossing node of the two layer carbon nano tube forms a memory unit of the memory. The invention discloses the valuing principle of each parameter in the process for making the memory and the working condition when the device performs the optimum storage characteristics, it solves the problems such as heat radiation, power consumption and stability confronted in the high density integration of the traditional memory.

基于碳纳米管单电子晶体管设计的单电子存储器及制法

The method uses silicon as substrate with insulation layer on it and doped polysilicon or metal layer where a mesa in carbon nano-tube transistor structure is etched out in it is on the insulation layer. The storage includes source and drain electrodes, an ohm contacted single wall carbon nano-tube set on two electrodes and a grid set at a side of the carbon nano-tube and between the two electrodes. The second carbon nano-tube is set above grid and source or drain electrode and to form above two tunneling node structures on the second carbon nano-tube as quontrum dot is formed between two tunneling nodes.

以库仑阻塞原理设计的单电子存储器及其制备方法

This invention relates to a single electron memory and it spreparation method designed on coulomb damping theory including a monocrystal silicon layer on the surface with SOI as the substrate to be doped and etched to a carbon nm transistor structure containing an electrode as the source, an electrode as the drain and a grid, a single wall carbon nanometer tube is set on the two electrodes to form ohmic contact, the grid is between the two electrodes and at a side of the carbon nm tube, the other tube with more than two tunnel through joints is set on the grid and the source or grain of the transister to form ohmic contact. The said device is easy to be prepared.

New function and usage of magnetic nano material

The invention discovers magnetic nanostructured material with catalytic activity of proteinase. In existence of H2O2, the nanostructured material can react with substrate of horseradish peroxidase such as DAB, TMB to generate resultant same as peroxidase with like catalytic action as thereof. Comparing with proteinase, enzyme activity of the magnetic nanostructured material has more advantages as multitude preparation, low cost, stable conservation at room temperature, easy decoration and marking. Not only the enzyme activity of the magnetic nanostructured material applied directly in applied range of peroxidase, but also combined magnetism thereof with enzymology activity to realize separating and testing integrated. The discovery of this new function assigns more new function of magnetic nanostructured material.

两端垂直结构的碳纳米管晶体管做的单电子存储器及制法

The invention refers to a single electron memory made by two-end vertical structured nano carbon tube transistor and the making method, including: developing a SiO2 insulating layer on a substrate; on the SiO2 insulating layer, preparing a two-end vertical-structured nano carbon tube transistor and setting a semiconductor single-wall nano carbon tube; preparing a grid insulating layer over the nano carbon tube; over the grid oxide layer, and connecting the grid and the drain of the nano carbon tube transistor with each other through a metal nano carbon tube which has at least two tunnel junctions.

Strip-shaped spraying head for electrostatic spinning

The invention relates to spraying heads for electrostatic spinning, and provides a strip-shaped spraying head for electrostatic spinning, which can increase the yield of electrostatic spinning equipment and improve the thickness uniformity of spun fiber membranes and cannot be blocked. The strip-shaped spraying head comprises a solution feeding mechanism, a strip-shaped conductive sheet and a conductive sheet bracket, wherein the strip-shaped conductive sheet is fixedly connected with the conductive sheet bracket; the solution feeding mechanism is used for uniformly coating the surface of one side of the long edge of the strip-shaped conductive sheet with a spinning solution. During spinning, the strip-shaped conductive sheet is connected with the anode of a high-voltage direct-current power supply, a spinning collection plate is connected with the cathode of the high-voltage direct-current power supply, the solution is uniformly applied to the surface of one side of the long edge of the ...

碳纳米管逻辑“或”门器件及其制备方法

This invention relates to a carbon nm tube logic "OR" device and its preparation technology. The said device includes a substrate with an insulation layer, carbon nm tube, grids, electrodes and a resistor, two grids in the groove on the insulation layer, two electrodes are set in the groove on the insulation layer at both sides of two two grids, a carbon nm tube contacts with the grid anjd electrode, one of the electrodes connects the earth the other connects to a constant voltage by a resistor. The two grids control on-off of the carbon nm transistor to realize logic "OR" function.

Method for preparing ITO nanometer line and gas sensor thereof

The invention discloses a method to prepare ITO nanometer lines and a method to prepare ITO gas sensors. The method to prepare ITO nanometer lines is as follows: a layer of gold film deposits on an underlayer; powdered indium oxide, stannous oxide and plumbago are mixed pro rata, and are arranged in a boat; the underlayer is also arranged on the boat to be heated and thermally insulated together with the mixture. The air pressure inside a silica tube in a heater is kept to be about 300 Pa, and gaseous mixture containing little oxygen is admitted in the silica tube; after the heater is cooled to the room temperature, yellowish products are generated on the underlayer. The method to prepare the sensors is that the nanameter lines are dispersed in the solution for about two hours with ultrasonic wave, and are dried; the sizing agent formed is applied on the ceramic tubes of two electrodes, and needs covering on the electrodes; then the sizing agent is dried or sintered, and is connected with ...

High-liquid absorbing rate micro-nano structure polymer electrolyte membrane and preparation method thereof

The invention discloses a preparation method of a high-liquid absorbing rate micro-nano structure polymer electrolyte membrane, wherein the membrane is prepared by polymer material being packed on a support frame. The method comprises the following steps of: by being processed, the polymer membrane has a micro-nano structure, forms holes with micron level and nanometer level, and forms a netty distribution hole structure with the nanometer holes of the support frame; and the polymer which is crossly linked layer by layer is packed on the special support frame to form a special netty micro-nano structure polymer electrolyte membrane. The polymer membrane of the micro-nano structure can absorb large numbers of electrolyte, greatly increase liquid-absorption rate, and improve the affinity of diaphragm to the electrolyte; the netty micro-nano structure leads the electrolyte to be kept in the membrane well, leads lithium ion in the polymer electrolyte membrane to be evenly distributed, leads ...

点接触平面栅型单电子晶体管及其制备方法(一)

... 本发明涉及微电子器件和微加工方法，特别是涉及一种点接触平面栅型高温单电子晶体管及其制备方法。用电子束光刻方法及常规光刻法来制备。在衬底上的导电材料层中有源极和漏极；在源极和漏极之间是一含有量子点的窄通道，在窄通道两边是点接触平面栅，在导电材料层上为一沉积的绝缘材料层，在绝缘材料层上覆盖有表面栅。本发明的单电子晶体管量子点的大小可达原子尺度，能在室温下工作，满足单电子晶体管正常动作的两个基本条件。 ...

碳纳米管“或否”逻辑器件

This invention relates to a carbon nm tube "NOR" logic device including Si as the substrate with SiO2 oxide layer on it and carbon nm transistors, grids and electrode on SiO2. The said grid includes two independent grids composed of Al2O3 insulation layer formed by deposited Al on two adjacent grooves after oxidizing on the surface and thickness of the grid insulation layer is smaller than 3 nm. The said electrode includes two independent ones placed above the SiO2 and on the carbon nm transistor or below. A carbon nm transistor is put on SiO2 surface contacting with grid Al2O3 insulation surface and noble metal surface of the electrode.

用垂直结构的碳纳米管晶体管设计的单电子存储器及制法

The invention refers to a single electron memory designed by vertical structured nano carbon tube transistor and the making method, including: developing a SiO2 insulating layer on a substrate; on the SiO2 insulating layer, preparing a vertical structured nano carbon tube transistor and setting a semiconductor single wall nano carbon tube; preparing a very thin grid insulating layer over the nanocarbon tube, a metal word wire of the memory set on the grid insulating layer and linked with the grid by a metal nano carbon tube which has at least two tunnel junctions.

有自校准功能的对电荷超敏感的库仑计及其制备方法

... 本发明属于微电子器件和微加工方法，特别是涉及一种有自校准功能的对电荷超敏感的库仑计及其制备方法。在衬底上的导电材料层中分别有两个源极和漏极；在导电材料层的源极和漏极处各分别有两个槽，分别在两个槽之间的台面形成连接源极和漏极的一维波导，其宽度都是3-800纳米；在一维波导上沉积有线条栅，在第一一维波导的第一量子点(5)和第二一维波导的第二量子点(6)处，有连接第一量子点(5)和第二量子点(6)的悬浮栅(23)。可用于探测万分之一的电子电荷。 ...

具有单壁碳纳米管结构的“与”门逻辑器件及其制作方法

This invention relates to an AND-gate logic device with single wall carbon nm tube as the basis, composed of a single wall nm tube, two independent grids and three independent grids. A middle electrode is added by constant bias as the output end, the other two connect to the earth. Two grids are used as the input end controlling on-off of the single wall carbon nm tube realizing the logic AND operation.

利用碳纳米管制作的随机存储器及制备方法

This invention relates to a carbon nano transistor random memory including Si as the substrate with SiO2 insulation layer, carbon nm tube, grid and electrode on it, the grid is placed in a groove in SiO2 insulation layer, Al deposited on it becomes Al2O3 insulation layer after surface oxidation, the grid is connected to a resistor linking to a constant voltage source. The electrode is parallel tothe grid above or below the carbon nm tube at both sides of the grid, the first one connects to the earth, the second links to switch and the grid is connected with the secone electrode in short, a carbon nm tube is vertical to the grid and two independent electrodes, plainly, placed on the surface of SiO2 layer contacting with surfaces of Al2O2 and electrodes.

Single electron memory having carbon nano tube structure and process for making it

The invention discloses a single electron dynamic random access memory (DRAM) device and process for making it. The device uses Si as substrate, there is a silicon oxide layer on the substrate, a nano line is made by etching processing in the metal or polysilicon layer on the silicon oxide insulation layer, one end of the nano line is data cable pin, there are two control grids parallel to the two sides of the namo lines at each side of them. The memory unit is the part of the namo line which is longer the the control grid and extending into between the two electrodes of the carbon nano transistor. By controlling several dozens or several electrons, the normal operation of the memory can be realized and without the influence of the random background charges, thus solving the problems suchas stability, power consumption, radiation and grid leakage current faced in the development of the traditional memories, the invention also realizes the super-high density information storage under the ...

一种高性能纳米晶体管的制备方法

The preparation method of high-performance nano transistor includes the following steps: on the conductive wafer making oxidation, growth or deposition of insulating layer to prepare the required substrate; on the substrate preparing metal electrodes of source and drain; placing nano material between two electrodes and making its two ends be respectively connected with two electrodes to form good ohmic contact; placing the above-mentioned device in vacuum chamber and galvanizing two ends of nano material, after the galvanization is stopped, making lead and packaging so as to obtain the invented high-performance nano transistor.

Coulometer with self calibration function and supersensitivity to charge and its preparing process

The invention relates to a super charge-sensitive Coulomb meter with function of self-calibration and its preparation method that belongs to the microelectronic device and micro-processing method. There are a source electrode and a drain electrode in the conducting material layer on substrate. There are two troughs in the source electrode and drain electrode respectively. The platforms of 3-800 nm width between trough 8 and trough 9 form one-dimension waveguide to link the source electrode and the drain electrode. Wire grids are deposited on the one-dimension waveguide. Suspended grid 23 connects quantum points 5 and 6 on the one-dimension waveguide. The invented meter can detect 1/10000 electron charge.

Linear nozzle for electrostatic spinning

The invention relates to an electrostatic spinning nozzle, in particular to a linear nozzle for electrostatic spinning. According to the linear nozzle for electrostatic spinning, the productivity of electrostatic spinning equipment and the thickness uniformity of a spun fiber film can be improved, and no nozzle blocking is caused. The linear nozzle is provided with a conductive filament support, a conductive filament and a solution feeding mechanism. The conductive filament is fixedly connected with the conductive filament support, and the solution feeding mechanism is used for evenly smearing the conductive filament with spinning solutions. In the spinning process, the conductive filament is connected with the positive electrode of a high-voltage direct-current power source, a spinning collecting plate is connected with the negative electrode of the high-voltage direct-current power source, the surface of the linear conductive filament is evenly coated with the solutions through the solution ...

Single-electron transistor and its preparing process

A single-electron transistor is composed of one-dimensional waveguide and line grids and features that the said one-dimensional waveguide is combined with line grids to form a quantum point. Its advantages include high rate of finished products, high stability, nm-class size of quantum point, and high working temp.

Method for In2O3 nano line low-temperature original position growth

Three-end electrical measuring process for quantum spots device