23-01-2020 дата публикации
Номер: US20200027993A1
Автор:
MIAO XU,
HUA Xu,
WEIJING Wu,
WEIFENG CHEN,
LEI WANG,
JUNBIAO PENG,
XU MIAO,
XU HUA,
WU WEIJING,
CHEN WEIFENG,
WANG LEI,
PENG JUNBIAO,
XU, MIAO,
Xu, HUA,
Wu, WEIJING,
CHEN, WEIFENG,
WANG, LEI,
PENG, JUNBIAO
Принадлежит:
The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure. 1. An oxide semiconductor thin-film characterizes in that the oxide semiconductor thin-film is fabricated from (MO)(RO)semiconductor material by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor , in where , 0.8≤x≤1 , 0.0001≤y≤0.2 , x+y=1;the M in the metal oxide semiconductor is one element selected from In, Zn, Ga, Sn, Si, Al, Mg, Zr, Hf or Ta, or any arbitrary combination of two or more,the R in the rare-earth oxide is one element selected from Pr, Tb Dy, Yb, or any arbitrary combination of two or more.2. The oxide semiconductor thin-film of claim 1 , wherein claim 1 , the M in metal oxide semiconductor is a combination of Zn with one or two elements selected from Sn claim 1 , In and Ga.3. The oxide semiconductor thin-film of claim 2 , wherein claim 2 , the metal oxide semiconductor is one selected from indium-zinc-oxide claim 2 , indium-gallium-zinc-oxide claim 2 , indium-tin-zinc-oxide or tin-zinc-oxide.4. The oxide semiconductor thin-film of claim 3 , wherein claim 3 , ingredient mole ratio of InO:ZnO is 2:1 in the indium-zinc-oxide.5. The oxide semiconductor thin-film of claim 3 , wherein claim 3 , in ingredient mole ratio of InO:GaO:ZnO is 2:1:2 in the indium-gallium-zinc-oxide.6. The oxide semiconductor thin-film of claim 3 , wherein claim 3 , ingredient mole ratio of InO:SnO:ZnO is 1:1:1 in the indium-tin-zinc-oxide.7. The oxide semiconductor thin-film of claim 3 , wherein ...
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