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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 7. Отображено 7.
09-12-2009 дата публикации

SiC Schottky junction type Alpha radioactive isotope battery and manufacturing method thereof

Номер: CN0101599309A
Автор: QIAO DAYONG, YUAN WEIZHENG, YAO XIANWANG, ZANG BO, LU XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, XIANWANG YAO, BO ZANG, XIANGLIAN LU
Принадлежит:

The invention discloses a SiC Schottky junction type Alpha radioactive isotope battery and a manufacturing method thereof, belonging to the fields of micro energy source, semiconductor and nuclear physics. The battery sequentially comprises an Alpha nuclide 6, an upper electrode 5, a Schottky metal layer 4, a SiO2 passivation layer 3, an n type SiC layer 2, an n type SiC layer 1, an ohmic contact layer 7 and a lower electrode 8; wherein the n type SiC layer 2 and the Schottky metal layer 4 form a Schottky junction, the SiO2 passivation layer 3 is arranged in periphery ring-shaped region of the Schottky metal layer 4 above the n type SiC layer 2, and the Alpha nuclide 6 is Alpha radioactive isotope. The battery disclosed by the invention utilizes SiC semiconductor material with strong radiation resistance on one hand, so that the efficiency of the Alpha radioactive isotope battery is higher and the service life thereof is longer; on the other hand Schottky structure is used, neither ion ...

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Номер записи: 1
02-11-2011 дата публикации

Schottky concretionary battery with protection ring structure and manufacture method thereof

Номер: CN0101630537B
Автор: QIAO DAYONG, YUAN WEIZHENG, ZANG BO, YAO XIANWANG, LV XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, BO ZANG, XIANWANG YAO, XIANGLIAN LV
Принадлежит:

The invention discloses a Schottky concretionary battery with a protection ring structure and a manufacture method thereof, and belongs to the field of semiconductor, nuclear physics and micro power. The protection ring 6 of the battery is positioned at the peripheral annular region of a potential barrier metal layer 7 above an intrinsic i layer 4. Electronic signals are led out of an interface of a passivation layer 5 and the potential barrier metal layer 7 through a top electrode metal layer 8. All regions except the potential barrier metal layer 7 and the protection ring 6 above the intrinsic i layer 4 are covered by the passivation layer 5. Isotope 9 is covered above the potential barrier metal layer 7. An n<+>-type semiconductor 3, an Ohmic contact layer 2 and a bottom electrode metal layer 1 with the same shape and size are arranged under the intrinsic i layer 4 in order. In addition, the invention further discloses the manufacture method for the atomic battery. The micro concretionary ...

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Номер записи: 2
09-12-2009 дата публикации

Micro nuclear battery with protection ring structure and manufacturing method thereof

Номер: CN0101599308A
Автор: QIAO DAYONG, YUAN WEIZHENG, ZANG BO, YAO XIANWANG, LU XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, BO ZANG, XIANWANG YAO, XIANGLIAN LU
Принадлежит:

The invention discloses a PN junction or PIN junction type micro nuclear battery and a manufacturing method thereof, belonging to the fields of semiconductor, nuclear physics and micro energy source. The battery is provided with a protection ring 6 in the periphery ring-shaped region of a p+ type semiconductor layer 5 on the basis of traditional PN junction or PIN junction type micro nuclear battery; meanwhile a protection ring contact electrode 8 is arranged above the protection ring 6 for leading an electrical signal out; in addition, the manufacturing method of the nuclear battery is also disclosed. In the micro nuclear battery disclosed by the invention, the added protection ring inhibits surface leakage and influence of interface state current on radiation induced current, indirectly increases open circuit voltage, and also improves sensibility of elements on low-energy radioactive source, thus improving energy conversion efficiency of elements.

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Номер записи: 3
10-12-2008 дата публикации

Silicon carbide Schottky junction type nuclear cell and preparation thereof

Номер: CN0101320601A
Автор: QIAO DAYONG, YUAN WEIZHENG, GAO PENG, YAO XIANWANG, ZANG BO, LU XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, PENG GAO, XIANWANG YAO, BO ZANG, XIANGLIAN LU
Принадлежит:

The invention discloses a silicon carbide schottky junction nuclear battery and a fabrication method thereof and belongs to the field of semiconductors, nuclear physics and micro-energy. The structure successively comprises a nuclide 6, an upper electrode metal layer 5, a metal adhesive coating 4, a barrier metal layer 3, an intrinsic i layer 2, n<+> type SiC layer 1, an ohmic contact layer 7, a metal transition layer 8, a metal barrier layer 9 and a lower electrode metal layer 10, wherein, the n<+> type SiC layer 1 and the barrier metal layer 3 form the schottky junction. Furthermore, the invention also discloses a fabrication method of the structure. Due to the isotopic energy conversion structure provide by the invention is the schottky junction type based on the silicon carbide base, is not the p-n junction or p-i-n junction, therefore the good ohmic contact is formed without the ion implantation, the protection of the p-type SiC surface is not carried out via the high-temperature annealing ...

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Номер записи: 4
20-01-2010 дата публикации

Schottky concretionary battery with protection ring structure and manufacture method thereof

Номер: CN0101630537A
Автор: QIAO DAYONG, YUAN WEIZHENG, ZANG BO, YAO XIANWANG, LU XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, BO ZANG, XIANWANG YAO, XIANGLIAN LU
Принадлежит:

The invention discloses a Schottky concretionary battery with a protection ring structure and a manufacture method thereof, and belongs to the field of semiconductor, nuclear physics and micro power. The protection ring 6 of the battery is positioned at the peripheral annular region of a potential barrier metal layer 7 above an intrinsic i layer 4. Electronic signals are led out of an interface of a passivation layer 5 and the potential barrier metal layer 7 through a top electrode metal layer 8. All regions except the potential barrier metal layer 7 and the protection ring 6 above the intrinsic i layer 4 are covered by the passivation layer 5. Isotope 9 is covered above the potential barrier metal layer 7. An n<+>-type semiconductor 3, an Ohmic contact layer 2 and a bottom electrode metal layer 1 with the same shape and size are arranged under the intrinsic i layer 4 in order. In addition, the invention further discloses the manufacture method for the atomic battery. The micro concretionary ...

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Номер записи: 5
05-10-2011 дата публикации

Micro nuclear battery with protection ring structure and manufacturing method thereof

Номер: CN0101599308B
Автор: QIAO DAYONG, YUAN WEIZHENG, ZANG BO, YAO XIANWANG, LV XIANGLIAN, DAYONG QIAO, WEIZHENG YUAN, BO ZANG, XIANWANG YAO, XIANGLIAN LV
Принадлежит:

The invention discloses a PN junction or PIN junction type micro nuclear battery and a manufacturing method thereof, belonging to the fields of semiconductor, nuclear physics and micro energy source. The battery is provided with a protection ring 6 in the periphery ring-shaped region of a p+ type semiconductor layer 5 on the basis of traditional PN junction or PIN junction type micro nuclear battery; meanwhile a protection ring contact electrode 8 is arranged above the protection ring 6 for leading an electrical signal out; in addition, the manufacturing method of the nuclear battery is also disclosed. In the micro nuclear battery disclosed by the invention, the added protection ring inhibits surface leakage and influence of interface state current on radiation induced current, indirectlyincreases open circuit voltage, and also improves sensibility of elements on low-energy radioactive source, thus improving energy conversion efficiency of elements.

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Номер записи: 6
17-08-2011 дата публикации

Silicon carbide Schottky junction type nuclear cell and preparation thereof

Номер: CN0101320601B
Автор: QIAO DAYONG, LU XIANGLIAN, ZANG BO, YUAN WEIZHENG, GAO PENG, YAO XIANWANG, DAYONG QIAO, XIANGLIAN LU, BO ZANG, WEIZHENG YUAN, PENG GAO, XIANWANG YAO
Принадлежит:

The present invention discloses a silicon carbide schottky junction nuclear battery and a fabrication method thereof and belongs to the field of semiconductors, nuclear physics and micro-energy. The structure successively comprises a nuclide 6, an upper electrode metal layer 5, a metal adhesive coating 4, a barrier metal layer 3, an intrinsic i layer 2, n<+> type SiC layer 1, an ohmic contact layer 7, a metal transition layer 8, a metal barrier layer 9 and a lower electrode metal layer 10, wherein, the n<+> type SiC layer 1 and the barrier metal layer 3 form the schottky junction. Furthermore, the invention also discloses a fabrication method of the structure. Due to the isotopic energy conversion structure provide by the invention is the schottky junction type based on the silicon carbide base, is not the p-n junction or p-i-n junction, therefore the good ohmic contact is formed without the ion implantation, the protection of the p-type SiC surface is not carried out via the high-temperature ...

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Номер записи: 7