07-08-2014 дата публикации
Номер: US20140217530A1
A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)or (CoX)composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer. 1. A domain wall motion device , comprising:{'sub': n', 'n, '(a) a first stack comprising a lower seed layer and a laminated layer formed thereon wherein the first stack has a first width and wherein the seed layer is one or more of Hf, NiCr, and NiFeCr, and the laminated layer has intrinsic PMA and a composition represented by (Co/X)or (CoX)structure wherein X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, and Si, CoX is a disordered alloy, and n is the number of laminates in the stack; and'}(b) a second stack with a tunnel barrier/free layer/capping layer configuration and having a second width substantially greater than the first width, the tunnel barrier contacts a top surface of the first stack.2. The domain wall motion device of wherein the seed layer consists of Hf claim 1 , NiCr claim 1 , NiFeCr claim 1 , Hf/NiCr claim 1 , Hf/NiFeCr claim 1 , NiCr/Hf claim 1 , or NiFeCr/Hf.3. The domain wall motion device of further comprised of a magnetic layer made of CoFeB claim 1 , CoFe claim 1 , or combinations thereof that is formed between the laminated layer and the tunnel barrier layer claim 1 , the magnetic layer has ...
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